CN104600436A - Broadband microwave absorber based on capacitive surface - Google Patents
Broadband microwave absorber based on capacitive surface Download PDFInfo
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- CN104600436A CN104600436A CN201510076604.9A CN201510076604A CN104600436A CN 104600436 A CN104600436 A CN 104600436A CN 201510076604 A CN201510076604 A CN 201510076604A CN 104600436 A CN104600436 A CN 104600436A
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Abstract
The invention discloses a low-profile microwave absorber with a broadband absorbing characteristic, in particular to a broadband microwave absorber based on the capacitive surface. In view of impedance analysis, the low-frequency sensitive impedance characteristic of a medium substrate is utilized to obtain the impedance characteristic of the capacitive surface matched with the medium substrate. For the medium substrate fixed in thickness, working frequency band of the absorber is reduced by the capacitive surface, and electric thickness of the absorber is reduced. Further, multiple resonance is realized by a metal strip array loaded with lumped resistance, so that the low-profile microwave absorber with the wide frequency band absorbing characteristic is obtained. The medium layer of the absorber adopts a two-layer structure, the upper layer is a common medium substrate, and the lower layer is common polystyrene foam. Though with the bilayer medium materials, a single-layer metal patching circuit is adopted only, and the low-profile microwave absorber is simple in structure and easy to machine. In addition, cost and weight are low, and massive production can be realized.
Description
Technical field
The present invention relates to a kind of electro-magnetic wave absorption circuit, particularly a kind of low section based on capacitive surface, wide-band microwave absorber for electromagnetic compatibility and radar absorbing material.
Background technology
In stealthy and electromagnetic compatibility (EMC) technology become more and more important, the function and position of electromagnetic wave absorbent material is very outstanding, has become magic weapon and the wuwa of electronic countermeasures in modern military.Absorbing material significantly can reduce the RCS of aircraft, and shields electromagnetic wave, makes it does not disturb miscellaneous equipment and do not disturbed by miscellaneous equipment.Current absorbing material is towards the future development of " thickness is thin, density is low, frequency range is wide, absorption strong ".Different according to its mechanism of action, the research of absorbing material is mainly divided into two large classes: a kind of is research to new material, such as absorbent, the design of the composite materials such as absorbing material and the utilization of Meta Materials; Another is exactly the design based on Circuit theory, such as wire netting, and Salisbury shields, Jaumann absorber and comprise the Circuit analogous absorber of resistance and reactive component.At present, the research to resistive material being focused on to the research of Circuit analogous absorber, by designing the resistive film of difformity and different resistance value, realizing the absorption to incident electromagnetic wave.For this type of absorber, in wider bandwidth, obtain more satisfactory absorbent properties if want, the Main Means taked mainly increases the number of plies of absorbed layer, and this not only can increase the cost of making, and the volume and weight of absorber also can be made to increase.
In recent years, there is scholar's proposition capacitive circuit method to instruct the low Section Design of absorber, but be only limitted to the capacitive characteristics in square patch realizing circuit; And, because square patch structure is fixed, realize broadband if want by multi-resonant, the number of plies increasing absorber can only be relied on to realize, and resonant element number cannot be increased in same layer.This processing being absorber is made troubles.
Summary of the invention
Technical problem solved by the invention is to provide a kind of broadband based on capacitive surface low section microwave-absorbing body, and it can utilize thin medium substrate to realize the absorption characteristic in broadband.
The technical solution realizing the object of the invention is: a kind of wide-band microwave absorber based on capacitive surface, to load the metal band of lumped resistance for basic structure, the double resonance cellular construction formed with three resistance is one-period unit, each periodic unit is formed by four strip metal bands and three film patch resistance, described four strip metal bands are respectively the first metal band, second metal band, 3rd metal band, 4th metal band, described three film patch resistance are respectively the first film Chip-R, second film patch resistance, 3rd film patch resistance, the center line of four strip metal bands all about periodic unit of each periodic unit is symmetrical, wherein the first metal band and the 4th metal band are about center line symmetry, second metal band and the 3rd metal band are about center line symmetry, the first film Chip-R is welded between first metal band and the second metal band, the second film patch resistance and the 3rd film patch resistance is welded between 3rd metal band and the 4th metal band,
Each periodic unit is all printed on medium substrate, arranges metallic plate below medium substrate, and between medium substrate and metallic plate, filled polystyrene cystosepiment is in order to Supporting Media substrate.
The DIELECTRIC CONSTANT ε of medium substrate
rbe 2.2 ~ 10.2, thickness is 0.01 λ
lowf~ 0.017 λ
highf, wherein λ
lowfwith λ
highfrepresent the lowest operating frequency f of absorber respectively
lowf, maximum operating frequency f
highfcorresponding operation wavelength.
Packing material is polystyrene foam plate, and its effective dielectric constant is 1.03 ~ 1.07, and thickness is 0.1 λ
lowf~ 0.17 λ
highf.
First metal band is identical with the width of the 4th metal band, is 0.11 λ
lowf~ 0.187 λ
highf, the second metal band is identical with the width of the 3rd metal band, is 0.02 λ
lowf~ 0.034 λ
highf, at a distance of 0.032 λ between the first metal band and the second metal band
lowf~ 0.054 λ
highf, at a distance of 0.04 λ between the second metal band and the 3rd metal band
lowf~ 0.068 λ
highf;
Polarised direction is along x direction, and the spacing in adjacent two periodic units between the first film Chip-R is 0.2 λ
1, λ
1be the first resonance frequency f
1wavelength, in same periodic unit, between the second film patch resistance and the 3rd film patch resistance, spacing is 0.48 λ
2, λ
2be the second resonance frequency f
2wavelength, between the second film patch resistance adjacent in adjacent two periodic units and the 3rd film patch resistance, spacing is 0.2 λ
2.
Preferably, the first metal band is identical with the width of the 4th metal band, is 5.4mm, second metal band is identical with the width of the 3rd metal band, be 1mm, at a distance of 1.6mm between the first metal band and the second metal band, at a distance of 2mm between the 3rd metal band and the 4th metal band;
Spacing in adjacent two periodic units between the first film Chip-R is 20.2mm, in same periodic unit, between the second film patch resistance and the 3rd film patch resistance, spacing is 14.2mm, and between the second film patch resistance adjacent in adjacent two periodic units and the 3rd film patch resistance, spacing is 5.2mm.
Compared with prior art, its remarkable advantage is in the present invention: the microwave absorption body thickness based on capacitive surface that 1) the present invention proposes is only 0.070 λ
lowf~ 0.187 λ
highf(λ
lowfwith λ
highfrepresent the lowest operating frequency f of absorber respectively
lowf, maximum operating frequency f
highfoperation wavelength corresponding respectively), be far smaller than the thickness of traditional Salisbury screen; 2) the absorber working frequency range based on capacitive surface that the present invention proposes is 3.3 ~ 8.8GHz, and relative bandwidth is 86%.This broadband character is realized by multi-resonant, can increase electric resistance array according to actual needs, to form more resonance.3) microwave-absorbing body based on capacitive surface's structure of the present invention's proposition, although have employed double-deck dielectric material, but only have employed the metal patch circuit of individual layer, coordinate the use of film patch resistance, structure is more simple, and processing is easier, and cost is lower, lighter in weight, is applicable to large-scale production.
Below in conjunction with accompanying drawing, the present invention is described in further detail.
Accompanying drawing explanation
Fig. 1 is capacitive surface's structural representation of the present invention.
Fig. 2 is capacitive surface's cellular construction plane graph and the schematic three dimensional views based on capacitive surface's absorber cellular construction, wherein (a) is capacitive surface's cellular construction plane graph, and (b) is the schematic three dimensional views based on capacitive surface's absorber cellular construction.
Fig. 3 is the loss-free dielectric substrate impedance characteristic curve of ground connection.
Fig. 4 is the three dimensional analysis figure of surface impedance.Wherein (a) is reflectivity curve and the real part of surface impedance and the schematic three dimensional views of imaginary part, and (b) is the real part of surface impedance and the scope of imaginary part when different frequency place reflection coefficient is-15dB.
Fig. 5 is the impedance characteristic of capacitive surface.
Fig. 6 is the coverage diagram of the low section absorber based on capacitive surface.
Embodiment
Composition graphs 1, Fig. 2, a kind of wide-band microwave absorber based on capacitive surface of the present invention, to load the metal band of lumped resistance for basic structure, the double resonance cellular construction 1 formed with three resistance is one-period unit, each periodic unit is formed by four strip metal bands and three film patch resistance, described four strip metal bands are respectively the first metal band 2, second metal band 3, 3rd metal band 4, 4th metal band 5, described three film patch resistance are respectively the first film Chip-R 6, second film patch resistance 7, 3rd film patch resistance 8, the center line of four strip metal bands all about periodic unit of each periodic unit is symmetrical, wherein the first metal band 2 and the 4th metal band 5 are about center line symmetry, second metal band 3 and the 3rd metal band 4 are about center line symmetry, the first film Chip-R 6 is welded between first metal band 2 and the second metal band 3, the second film patch resistance 7 and the 3rd film patch resistance 8 is welded between 3rd metal band 4 and the 4th metal band 5,
Each periodic unit is all printed on medium substrate 9, arranges metallic plate 11 below medium substrate 9, and between medium substrate 9 and metallic plate 11, filled polystyrene cystosepiment 10 is in order to Supporting Media substrate 9.
The DIELECTRIC CONSTANT ε of described medium substrate 9
rbe 2.2 ~ 10.2, thickness is 0.01 λ
lowf~ 0.017 λ
highf, wherein λ
lowfwith λ
highfrepresent the lowest operating frequency f of absorber respectively
lowf, maximum operating frequency f
highfcorresponding operation wavelength.
Described packing material 10 is polystyrene foam plate, and its effective dielectric constant is 1.03 ~ 1.07, and thickness is 0.1 λ
lowf~ 0.17 λ
highf.
Described first metal band 2 is identical with the width of the 4th metal band 5, is 0.11 λ
lowf~ 0.187 λ
highf, the second metal band 3 is identical with the width of the 3rd metal band 4, is 0.02 λ
lowf~ 0.034 λ
highf, at a distance of 0.032 λ between the first metal band 2 and the second metal band 3
lowf~ 0.054 λ
highf, at a distance of 0.04 λ between the second metal band 3 and the 3rd metal band 4
lowf~ 0.068 λ
highf;
Polarised direction along x direction, on x direction same row resistance between spacing control resonance frequency.First resonance frequency (f
1) realized by the first film Chip-R 6, the spacing in adjacent two periodic units between the first film Chip-R 6 is 0.2 λ
1, λ
1be the first resonance frequency f
1wavelength.Second resonance frequency (f
2) realized by the second film patch resistance 7 and the 3rd film patch resistance 8, in same periodic unit, between the second film patch resistance 7 and the 3rd film patch resistance 8, spacing is 0.48 λ
2, λ
2be the second resonance frequency f
2wavelength, between the second film patch resistance 7 adjacent in adjacent two periodic units and the 3rd film patch resistance 8, spacing is 0.2 λ
2.Two resonance frequencys can be chosen according to the actual requirements.
Preferably, first metal band 2 is identical with the width of the 4th metal band 5, be 5.4mm, second metal band 3 is identical with the width of the 3rd metal band 4, be 1mm, at a distance of 1.6mm between first metal band 2 and the second metal band 3, at a distance of 2mm between the 3rd metal band 3 and the 4th metal band 4;
Spacing in adjacent two periodic units between the first film Chip-R 6 is 20.2mm, in same periodic unit, between the second film patch resistance 7 and the 3rd film patch resistance 8, spacing is 14.2mm, and between the second film patch resistance 7 adjacent in adjacent two periodic units and the 3rd film patch resistance 8, spacing is 5.2mm.
Film resistor is all welded on pad 12.
Below in conjunction with embodiment, further detailed description is done to the present invention:
Embodiment 1:
Wide-band microwave absorber preparation method based on capacitive surface of the present invention, step is as follows:
(1) first, determine the parameter of the medium substrate 9 of microwave-absorbing body, mainly select DIELECTRIC CONSTANT ε
1and thickness d
1.Based on the surface smoothness of absorber and the consideration of total weight, medium substrate 9 is PTFE medium substrate, its DIELECTRIC CONSTANT ε
rbe 2.65, thickness is 0.5mm.
(2) secondly, the packing material 10 spliced below medium substrate is polystyrene foam plate, and its effective dielectric constant is 1.05, and thickness is 5mm.
(3) medium substrate and foam utilize metallic plate 11 ground connection after being stitched together, then the surface impedance of its entirety 9,10,11 can have by following formulae discovery:
Wherein c is light propagation rate in free space, and f is electromagnetic frequency.
The impedance Z of the overall 9-11 of medium substrate
subthe image changed along with frequency f as shown in Figure 3, divides with resonance frequency f, presents perception, present capacitive during high frequency when low frequency.Impedance matching is realized in low-frequency range (frequency range namely corresponding to region 1) if select, shield with Salisbury and compare, the working frequency range of absorber significantly reduces, and corresponding operation wavelength becomes large, because this reducing the electric thickness of absorber, achieve the design of low section absorber.
(4) on the basis of step (3), the impedance operator of capacitive surface [1] is analyzed.For realizing impedance matching, the reflection characteristic Γ of absorber only with surface impedance Z
surfreal part Z
realand Z
imagrelevant, specific formula for calculation is as follows:
Γ＝(Z
in-Z
0)/(Z
in+Z
0)
Z
in＝Z
surf||Z
sub＝(Z
surfZ
sub)/(Z
surf+Z
sub)
Z
surf＝Z
real+jZ
imag
Wherein Z
0for free space impedance 377 Ω.
Composition graphs 4, can draw the real part Z of surface impedance from 3 dimensional drawing
realwith imaginary part Z
imagalong with reflection coefficient change Γ, the real part Z of surface impedance can be drawn thus
realwith imaginary part Z
imagin the excursion at different frequency place.
(5) on the basis of step (4), metal band combination film Chip-R is utilized to realize capacitive surface.Composition graphs 5, the surface texture 1 being loaded with resistance presents capacitive feature in very wide frequency band.
The double resonance cellular construction 1 that wherein capacitive surface is formed with three resistance is one-period unit, each periodic unit is formed by four strip metal bands and three film patch resistance, described four strip metal bands are respectively the first metal band 2, second metal band 3, 3rd metal band 4, 4th metal band 5, described three film patch resistance are respectively the first film Chip-R 6, second film patch resistance 7, 3rd film patch resistance 8, the center line of four strip metal bands all about periodic unit of each periodic unit is symmetrical, wherein the first metal band 2 and the 4th metal band 5 are about center line symmetry, second metal band 3 and the 3rd metal band 4 are about center line symmetry, the first film Chip-R 6 is welded between first metal band 2 and the second metal band 3, the second film patch resistance 7 and the 3rd film patch resistance 8 is welded between 3rd metal band 4 and the 4th metal band 5,
First metal band 2 is identical with the width of the 4th metal band 5, be 5.4mm, the second metal band 3 is identical with the width of the 3rd metal band 4, is 1mm, at a distance of 1.6mm between first metal band 2 and the second metal band 3, at a distance of 2mm between the 3rd metal band 3 and the 4th metal band 4;
Spacing between the first film Chip-R 6 is 20.2mm.Inner at one-period unit, between the second film patch resistance 7 and the 3rd film patch resistance 8, spacing is 14.2mm, and between unit, between the second film patch resistance 7 and the 3rd film patch resistance 8, spacing is 5.2mm.Film resistor 6,7,8 its encapsulation models are 0804, and resistance is 47 Ω.
This example comprises 14*16 periodic unit structure, and overall cross sectional dimensions is 300mm*300mm, and gross thickness is 6.5mm (wherein the thickness of ground plate is 1mm).Through numerical computations and actual test, when in electromagnetic wave vertical incidence to sample, absorptivity be 90% band limits be 3.3GHz ~ 8.8GHz, relative bandwidth is 86%.
As from the foregoing, the present invention requires for adapting to the low section of electromagnetic wave absorb to working frequency range and designs, and considers the requirement in broadband, realizes wider bandwidth by double resonance; In addition, the use of polystyrene foamed material not only can cut down finished cost, and greatly can also reduce overall weight.Low section microwave-absorbing body relative bandwidth based on capacitive surface is 86% (absorptivity is more than 90%).
Embodiment 2
Wide-band microwave absorber based on capacitive surface of the present invention, the DIELECTRIC CONSTANT ε of medium substrate 9
rbe 2.2, thickness is 1mm.Packing material 10 is polystyrene foam plate, and its effective dielectric constant is 1.03, and thickness is 4.5mm.
First metal band 2 is identical with the width of the 4th metal band 5, be 3.2mm, second metal band 3 is identical with the width of the 3rd metal band 4, be 2.6mm, at a distance of 1.6mm between first metal band 2 and the second metal band 3, at a distance of 3.4mm between the second metal band 3 and the 3rd metal band 4.
Polarised direction is along x direction, and the spacing in adjacent two periodic units between the first film Chip-R 6 is 21.9mm.In same periodic unit, between the second film patch resistance 7 and the 3rd film patch resistance 8, spacing is 16.0mm, and between the second film patch resistance 7 adjacent in adjacent two periodic units and the 3rd film patch resistance 8, spacing is 5.1mm.Film resistor 6,7,8 its encapsulation models are 0804, and resistance is 82 Ω.
This example comprises 13*13 periodic unit structure, and overall cross sectional dimensions is 300mm*300mm, and gross thickness is 6.5mm (wherein the thickness of ground plate is 1mm).Through numerical computations, when in electromagnetic wave vertical incidence to sample, the working frequency range of absorber is 3.0 ~ 8.3GHz, and relative bandwidth is 93.8%.
Embodiment 3
Wide-band microwave absorber based on capacitive surface of the present invention, the DIELECTRIC CONSTANT ε of medium substrate 9
rbe 10.2, thickness is 0.8mm.Packing material 10 is polystyrene foam plate, and its effective dielectric constant is 1.07, and thickness is 5.3mm.
First metal band 2 is identical with the width of the 4th metal band 5, be 4.9mm, second metal band 3 is identical with the width of the 3rd metal band 4, be 3.3mm, at a distance of 1.6mm between first metal band 2 and the second metal band 3, at a distance of 1.8mm between the second metal band 3 and the 3rd metal band 4.
Polarised direction is along x direction, and the spacing in adjacent two periodic units between the first film Chip-R 6 is 19.8mm.In same periodic unit, between the second film patch resistance 7 and the 3rd film patch resistance 8, spacing is 14.3mm, and between the second film patch resistance 7 adjacent in adjacent two periodic units and the 3rd film patch resistance 8, spacing is 4.7mm.Film resistor 6,7,8 its encapsulation models are 0804, and resistance is 57 Ω.
This example comprises 14*13 periodic unit structure, and overall cross sectional dimensions is 300mm*300mm, and gross thickness is 7.1mm (wherein the thickness of ground plate is 1mm).Through numerical computations, when in electromagnetic wave vertical incidence to sample, the working frequency range of absorber is 4.2 ~ 9.8GHz, and relative bandwidth is 80%.
As from the foregoing, the wide-band microwave absorber based on capacitive surface of the present invention have employed the metal patch circuit of individual layer, coordinates the use of film patch resistance, and structure is more simple, and processing is easier, and cost is lower, lighter in weight, is applicable to large-scale production.
Claims (5)
1. the wide-band microwave absorber based on capacitive surface, it is characterized in that, to load the metal band of lumped resistance for basic structure, the double resonance cellular construction [1] formed with three resistance is one-period unit, each periodic unit is formed by four strip metal bands and three film patch resistance, described four strip metal bands are respectively the first metal band [2], second metal band [3], 3rd metal band [4], 4th metal band [5], described three film patch resistance are respectively the first film Chip-R [6], second film patch resistance [7], 3rd film patch resistance [8], the center line of four strip metal bands all about periodic unit of each periodic unit is symmetrical, wherein the first metal band [2] is symmetrical about center line with the 4th metal band [5], second metal band [3] and the 3rd metal band [4] are about center line symmetry, the first film Chip-R [6] is welded between first metal band [2] and the second metal band [3], the second film patch resistance [7] and the 3rd film patch resistance [8] is welded between 3rd metal band [4] and the 4th metal band [5],
Each periodic unit is all printed on medium substrate [9], medium substrate [9] below arranges metallic plate [11], and between medium substrate [9] and metallic plate [11], filled polystyrene cystosepiment [10] is in order to Supporting Media substrate [9].
2. the wide-band microwave absorber based on capacitive surface according to claim 1, is characterized in that, the dielectric constant of medium substrate [9]
ε r be 2.2 ~ 10.2, thickness is 0.01
λ lowf ~ 0.017
λ highf , wherein
λ lowf with
λ highf represent the lowest operating frequency of absorber respectively
f lowf , maximum operating frequency
f highf corresponding operation wavelength.
3. the wide-band microwave absorber based on capacitive surface according to claim 1, is characterized in that, packing material [10] is polystyrene foam plate, and its effective dielectric constant is 1.03 ~ 1.07, and thickness is 0.1
λ lowf ~ 0.17
λ highf .
4. the wide-band microwave absorber based on capacitive surface according to claim 1, is characterized in that, the first metal band [2] is identical with the width of the 4th metal band [5], is 0.11
λ lowf ~ 0.187
λ highf , the second metal band [3] is identical with the width of the 3rd metal band [4], is 0.02
λ lowf ~ 0.034
λ highf , at a distance of 0.032 between the first metal band [2] and the second metal band [3]
λ lowf ~ 0.054
λ highf , at a distance of 0.04 between the second metal band [3] and the 3rd metal band [4]
λ lowf ~ 0.068
λ highf ;
Polarised direction along
xdirection, the spacing in adjacent two periodic units between the first film Chip-R [6] is 0.2
λ 1 ,
λ 1 it is the first resonance frequency
f 1 wavelength, in same periodic unit, between the second film patch resistance [7] and the 3rd film patch resistance [8], spacing is 0.48
λ 2 ,
λ 2 it is the second resonance frequency
f 2 wavelength, between the second film patch resistance [7] adjacent in adjacent two periodic units and the 3rd film patch resistance [8], spacing is 0.2
λ 2 .
5. the wide-band microwave absorber based on capacitive surface according to claim 1, it is characterized in that, first metal band [2] is identical with the width of the 4th metal band [5], be 5.4mm, second metal band [3] is identical with the width of the 3rd metal band [4], be 1mm, at a distance of 1.6mm between the first metal band [2] and the second metal band [3], at a distance of 2mm between the 3rd metal band [3] and the 4th metal band [4];
Spacing in adjacent two periodic units between the first film Chip-R [6] is 20.2mm, in same periodic unit, between the second film patch resistance [7] and the 3rd film patch resistance [8], spacing is 14.2mm, and between the second film patch resistance [7] adjacent in adjacent two periodic units and the 3rd film patch resistance [8], spacing is 5.2mm.
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| CN110277649A (en) * | 2019-06-27 | 2019-09-24 | 南京理工大学 | Circuit analogous absorber based on micro-meter scale periodic unit |
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