CN104600221A - Indium tin oxide (ITO) glass surface processing method - Google Patents
Indium tin oxide (ITO) glass surface processing method Download PDFInfo
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- CN104600221A CN104600221A CN201510010702.2A CN201510010702A CN104600221A CN 104600221 A CN104600221 A CN 104600221A CN 201510010702 A CN201510010702 A CN 201510010702A CN 104600221 A CN104600221 A CN 104600221A
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- ito
- ito glass
- glass surface
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an indium tin oxide (ITO) glass surface processing method. By using a high-frequency discharge method, the surface of the ITO glass is processed. The method comprises the steps of: cleaning and drying the IOT glass surface, processing the ITO glass surface by using an A-type electrical sparkle vacuum detector, wherein the high-frequency discharge time is 0 to 5 minutes. On the ITO glass processed by the method, a vacuum evaporation organic layer and a total reflection cathode are prepared; and an ITO work function can be effectively improved by using the method for processing the ITO of an organic light emitting diode (OLED) anode, so that the OLED driving voltage is reduced, and the luminance and efficiency are improved.
Description
Technical field
The present invention relates to a kind of processing method of OLED electrode material, particularly relate to a kind of processing method of OLED anode material, be applied to organic electroluminescence device preparing technical field.
Background technology
Organic electroluminescence device have active illuminating, high brightness, high efficiency, wide viewing angle, fast response time, rich color, light, the plurality of advantages such as curling display screen can be made, become current display device research hot topic.
Since the C.W.Tang of Kodak company of the U.S. in 1987 electroluminescent device of organic thin film that to deliver with thin film technique and low workfunction metal electrode be feature, organic thin film electroluminescent is developed rapidly, and enters the application stage.Be the brightness of raising organic electroluminescence device, efficiency and life-span in recent years, people have done a lot of relevant research work, as improved the injection, modifying interface etc. of electrode.The metal of general employing low work function and alloy are as negative electrode, and the transparency electrode of high work function is as anode.ITO, owing to having the performances such as the good transparency, electrical transmission and low-resistivity, is widely used as anode material always.
Surface characteristic such as surface roughness, the work function etc. of ITO play very important effect to whole device performance.Surface-treated method is carried out to ITO and has that UV ozone method (uv-ozone) processes, gas ions (plasma) processes and utilize H
2o
2clean etc. ITO with various chemical reagent, although these methods all obtain obvious effect, the processing time is long, and method is complicated.The conventional method of measurement of the work function of general ITO has XPS (x-ray photoelectron spectroscopy), UPS (UV photoelectron spectroscopy) and KPM (Kelvin probe), and this several method of measurement equipment needed thereby is expensive, complex operation.
Summary of the invention
In order to solve prior art problem, the object of the invention is to the deficiency overcoming prior art existence, a kind of processing method of ito glass surface is provided, the work function of conventional OLED anode ITO can be significantly improved, the OLED prepared by the inventive method ito glass electrode is adopted to have threshold voltage low, brightness advantages of higher, the inventive method ito glass Electrode treatment method is simple, meets the needs of suitability for industrialized production.
Create object for reaching foregoing invention, the present invention adopts following technical proposals:
A kind of processing method of ito glass surface, high-frequency discharge method is adopted to process ito glass surface, be specially: after ito glass surface clean is totally dried, A type electric spark vacuum detector is used to carry out surface treatment to ito glass, the high-frequency discharge processing time is 0-5min, and the preferred high-frequency discharge processing time is 4min.
The square resistance being applicable to the ito glass of high-frequency discharge process of the present invention is preferably 0-100 Ω, and the square resistance being preferably applicable to the ito glass of high-frequency discharge process of the present invention is further 0-20 Ω.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and remarkable advantage:
1. the method for process OLED anode ITO of the present invention can effectively improve ITO work function, thus OLED driving voltage is declined, and luminance and efficiency improves;
2. processing method of the present invention, the processing time is short, method is simple, is a kind of effective processing method in organic electroluminescence device preparation process.
Accompanying drawing explanation
Fig. 1 is the OLED structural representation utilizing the ito glass of various embodiments of the present invention to prepare.
Fig. 2 is ITO work function after various embodiments of the present invention process and the relation in high-frequency discharge processing time.
Fig. 3 is the ln (J/F utilizing the ito glass of the embodiment of the present invention one, embodiment three and comparative example to prepare single layer device ITO/ TPD/ Cu
2) ~ (1/ F) curve chart.
Fig. 4 is the J-V performance diagram utilizing the ito glass of the embodiment of the present invention one, embodiment three and comparative example to prepare single layer device ITO/ TPD/ Cu.
Fig. 5 is the threshold voltage V of the device utilizing the ito glass of the embodiment of the present invention one, embodiment three and comparative example to prepare
th, maximum brightness B
maxwith maximum current efficiency
ηcontrast.
Embodiment
Details are as follows for the preferred embodiments of the present invention:
embodiment one:
In the present embodiment, see Fig. 1 ~ Fig. 5, a kind of processing method of ito glass surface, a kind of high-frequency discharge method is adopted to process ITO surface, be specially: first ITO substrate glass cleaning agent is cleaned, then use acetone, alcohol, deionized water ultrasonic cleaning successively, dry, obtain the ITO substrate glass of clean dried; Then use A type electric spark vacuum detector to carry out surface treatment to ito glass, after high-frequency discharge process 1min, obtain ito glass substrate, for subsequent use as preparing semiconductor device.See Fig. 1, on the ito glass 1 of the present embodiment method process, prepare vacuum evaporation organic layer 2 and total reflection negative electrode 3 successively, it is low that the OLED prepared thus has threshold voltage, brightness advantages of higher, the inventive method is simple, can add ito glass surface work function.
embodiment two:
The present embodiment is substantially identical with embodiment one, and special feature is:
In the present embodiment, see Fig. 2, a kind of processing method of ito glass surface, is specially: first cleaned by ITO substrate glass cleaning agent, then use acetone, alcohol, deionized water ultrasonic cleaning successively, dries, obtains the ITO substrate glass of clean dried; Then use A type electric spark vacuum detector to carry out surface treatment to ito glass, after high-frequency discharge process 2min, obtain ito glass substrate, for subsequent use as preparing semiconductor device.
embodiment three:
The present embodiment and previous embodiment are substantially identical, and special feature is:
In the present embodiment, see Fig. 1 ~ Fig. 5, a kind of processing method of ito glass surface, is specially: first cleaned by ITO substrate glass cleaning agent, then use acetone, alcohol, deionized water ultrasonic cleaning successively, dries, obtains the ITO substrate glass of clean dried; Then use A type electric spark vacuum detector to carry out surface treatment to ito glass, after high-frequency discharge process 3min, obtain ito glass substrate, for subsequent use as preparing semiconductor device.
embodiment four:
The present embodiment and previous embodiment are substantially identical, and special feature is:
In the present embodiment, see Fig. 2, a kind of processing method of ito glass surface, is specially: first cleaned by ITO substrate glass cleaning agent, then use acetone, alcohol, deionized water ultrasonic cleaning successively, dries, obtains the ITO substrate glass of clean dried; Then use A type electric spark vacuum detector to carry out surface treatment to ito glass, after high-frequency discharge process 4min, obtain ito glass substrate, for subsequent use as preparing semiconductor device.
embodiment five:
The present embodiment and previous embodiment are substantially identical, and special feature is:
In the present embodiment, see Fig. 2, a kind of processing method of ito glass surface, is specially: first cleaned by ITO substrate glass cleaning agent, then use acetone, alcohol, deionized water ultrasonic cleaning successively, dries, obtains the ITO substrate glass of clean dried; Then use A type electric spark vacuum detector to carry out surface treatment to ito glass, after high-frequency discharge process 5min, obtain ito glass substrate, for subsequent use as preparing semiconductor device.
comparative example:
This comparative example is substantially identical with comparative example one, and special feature is:
In the present embodiment, see Fig. 1 ~ Fig. 5, ITO substrate glass cleaning agent is cleaned, then uses acetone, alcohol, deionized water ultrasonic cleaning successively, dry, obtain the ITO substrate glass of clean dried.
experimental contrast analysis:
See Fig. 5, take the ITO substrate glass of the clean dried that comparative example obtains respectively, ITO substrate glass after process 3min that ITO substrate glass after process 1min that embodiment one obtains and embodiment three obtain, again organic layer through vacuum evaporation film forming on each ito glass substrate, finally respectively by metal electrode Cu film forming on organic layer, prepare the device D that light-emitting area is 0.5cm × 0.5cm respectively
0, D
1and D
3.Test process carries out all in an atmosphere, under the same conditions, to device D
0, D
1and D
3test respectively, the threshold voltage V of device prepared by the ito glass obtaining embodiment one, embodiment three and comparative example
th, maximum brightness B
maxwith maximum current efficiency
η.Contrast known by experiment, record device D
0threshold voltage be 9.9V, high-high brightness is 2475cd/m
2, maximum current efficiency is 1.68cd/A; Record device D
1threshold voltage be 4.8V, high-high brightness is 3 362cd/m
2, maximum current efficiency is 1.81cd/A; Record device D
3threshold voltage be 4. 04 V, high-high brightness is 4 250cd/m
2, maximum current efficiency is 2. 06cd/A, as shown in Figure 5.Device D
1and D
3respectively with device D
0compare, threshold voltage decreasing, luminance and efficiency improves, and from the embodiment of the present invention, the present invention utilizes high-frequency discharge to ITO substrate glass surface treatment, and can reduce device cut-in voltage, improves device brightness and efficiency.
For ito glass prepared by the embodiment of the present invention one ~ embodiment five and comparative example, contact potential difference method is adopted to determine the work function of ITO under different disposal condition, namely, after ito glass surface clean is totally dried, A type electric spark vacuum detector is used to process respectively, processing time is respectively 0,1,2,3,4,5 min, utilizes contact potential difference method to measure the work function of the ITO before and after process, as depicted in figs. 1 and 2.The present invention for anode, has prepared single charge carrier device ITO/TPD/Cu with the ITO before and after processing, compare and the ITO that analyzes under different disposal condition on the impact of the hole injection barrier of ITO/TPD in single charge carrier device, be up to 0.25eV.This processing method processing time is short, method simple, is a kind of effective processing method in organic electroluminescence device preparation process.Based on processing method of the present invention, the ITO after process, can along with the increase in processing time, and the work function of ITO improves gradually.
By reference to the accompanying drawings the embodiment of the present invention is illustrated above; but the invention is not restricted to above-described embodiment; multiple change can also be made according to the object of innovation and creation of the present invention; change, the modification made under all Spirit Essences according to technical solution of the present invention and principle, substitute, combination, to simplify; all should be the substitute mode of equivalence; as long as goal of the invention according to the invention; only otherwise deviate from know-why and the inventive concept of the processing method on ito glass surface of the present invention, all protection scope of the present invention is belonged to.
Claims (4)
1. the processing method on an ito glass surface, it is characterized in that, high-frequency discharge method is adopted to process ito glass surface, be specially: after ito glass surface clean is totally dried, use A type electric spark vacuum detector to carry out surface treatment to ito glass, the high-frequency discharge processing time is 0-5min.
2. the processing method on ito glass surface according to claim 1, is characterized in that: the high-frequency discharge processing time is 4min.
3. the processing method on ito glass surface according to claim 1 or 2, is characterized in that: the square resistance being applicable to the ito glass of high-frequency discharge process is 0-100 Ω.
4. the processing method on ito glass surface according to claim 3, is characterized in that: the square resistance being applicable to the ito glass of high-frequency discharge process is 0-20 Ω.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510010702.2A CN104600221A (en) | 2015-01-09 | 2015-01-09 | Indium tin oxide (ITO) glass surface processing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510010702.2A CN104600221A (en) | 2015-01-09 | 2015-01-09 | Indium tin oxide (ITO) glass surface processing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11404681B2 (en) | 2018-11-27 | 2022-08-02 | Yungu (Gu'an) Technology Co., Ltd. | Display panel, manufacturing method thereof, and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120009364A (en) * | 2010-07-23 | 2012-02-01 | 광운대학교 산학협력단 | Surface treatment method of ito |
| CN102610765A (en) * | 2012-04-06 | 2012-07-25 | 复旦大学 | Surface modifying method for improving surface power function of indium tin oxide transparent conductive film |
-
2015
- 2015-01-09 CN CN201510010702.2A patent/CN104600221A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120009364A (en) * | 2010-07-23 | 2012-02-01 | 광운대학교 산학협력단 | Surface treatment method of ito |
| CN102610765A (en) * | 2012-04-06 | 2012-07-25 | 复旦大学 | Surface modifying method for improving surface power function of indium tin oxide transparent conductive film |
Non-Patent Citations (1)
| Title |
|---|
| 刘德武等: "高频放电处理ITO电极对有机电致发光器件性能的影响", 《上海大学学报（自然科学版）》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11404681B2 (en) | 2018-11-27 | 2022-08-02 | Yungu (Gu'an) Technology Co., Ltd. | Display panel, manufacturing method thereof, and display device |
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