CN104576927A - Homotype plane heterojunction photosensitive organic field effect transistor - Google Patents

Homotype plane heterojunction photosensitive organic field effect transistor Download PDF

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Publication number
CN104576927A
CN104576927A CN201310503428.3A CN201310503428A CN104576927A CN 104576927 A CN104576927 A CN 104576927A CN 201310503428 A CN201310503428 A CN 201310503428A CN 104576927 A CN104576927 A CN 104576927A
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China
Prior art keywords
organic
homotype
effect transistor
field effect
photosensitive
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CN201310503428.3A
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彭应全
周茂清
姚博
郑挺才
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Lanzhou University
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Lanzhou University
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Priority to CN201310503428.3A priority Critical patent/CN104576927A/en
Publication of CN104576927A publication Critical patent/CN104576927A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/354—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-insulator-semiconductor [m-i-s] structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Photovoltaic Devices (AREA)
  • Thin Film Transistor (AREA)

Abstract

The invention discloses a design and manufacturing method of a homotype plane heterojunction photosensitive organic field effect transistor. The homotype plane heterojunction photosensitive organic field effect transistor comprises a substrate, a grid, a grid medium, an organic carrier transportation layer, an organic photosensitive layer, a drain and a source, wherein the organic photosensitive layer is used for realizing a function of generating a photon-generated carrier, and only needs to have high photosensitiveness and photon-generated carrier generation efficiency without high migration rate; the organic carrier transportation layer is used for realizing a transportation function of the photon-generated carrier, and only needs to have high migration rate without high photosensitiveness. Due to adoption of the structure, the selection range of an organic material is greatly widened, on one hand, the generation efficiency of the photon-generated carrier is improved, and on the other hand, the photon-generated carrier migration rate is increased, and therefore, the property of the photosensitive organic field effect transistor is effectively improved.

Description

A kind of homotype planar heterojunction photosensitive organic field effect transistor
Technical field
The present invention relates to a kind of photosensitive organic field effect transistor manufacture method, the manufacture of the photosensitive field effect transistor of especially a kind of homotype planar heterojunction, belongs to solid electronic device technical field.
Background technology
Photosensitive organic field effect transistor is made up of substrate, grid, gate medium, photosensitive organic channel material, source electrode and drain electrode usually.Major part organic semiconducting materials belongs to single carrier transport type, and namely it is far longer than mobility to another kind of charge carrier to a kind of mobility of charge carrier.The material that usual electron mobility is far longer than hole mobility is called electric transmission shaped material, be called for short n-type material, and the material that hole mobility is far longer than electron mobility is called hole transport shaped material, is called for short p-shaped material.In organic semiconductor, electronics does not occupy the upper transmission of track (lowest unoccupied molecular orbital)-(LUMO) minimum, and hole has occupied the upper transmission of track (highest occupied molecular orbital)-(HOMO) the highest.Photosensitive organic field effect transistor usually adopts at the bottom of contact at the bottom of bottom gate top contact, bottom gate, top grid top contact, top grid and contacts four kinds of structures.In contact structures at the bottom of bottom gate, source-drain electrode between insulating barrier and organic semiconductor, can by traditional photoetching process graphical source-drain electrode, therefore device channel length can accomplish less than 1 μm.In bottom gate top contact structure, semiconductor layer deposition is on insulating barrier, and regrowth metal electrode in face forms source and drain contact on the semiconductor layer, and the device of top contact structure contacts well due to electrode with organic layer, therefore has extraordinary performance.In contact and top grid top contact at the bottom of the grid of top, device gate electrode is that last deposit is got on, and organic semiconductor layer is wrapped up by substrate and insulating barrier and electrode, and device is highly stable in atmosphere.
Compared with inorganic photosensitive field effect transistor, it is high that photosensitive organic field effect transistor has conversion efficiency, can the advantage such as large area low cost manufacture.The active layer of conventional structure photOFET adopts pure p-type or n-type light-sensitive material, donor-acceptor planar heterojunction usually, or donor-acceptor bulk heterojunction (mixture of donor molecule and acceptor molecule).Owing to can there is the Charger transfer from donor molecule to acceptor molecule at donor-acceptor interface, make, with donor-acceptor planar heterojunction (planar heterojunction)-(PHJ) and the bulk heterojunction photOFET that (bulk heterojunction)-(BHJ) is active layer, there is higher performance.
The important physical process of photosensitive organic field effect transistor two of carrying out under light illumination is that photo-generated carrier produces and photo-generated carrier transmits.The former requires that photosensitive organic layer has high absorption coefficient, and the latter then requires that photosensitive organic layer has high carrier mobility.In PHJ-photOFET, in most cases donor layer (p-type) is as photosensitive layer, and receptive layers is then as carrier blocking layers.Usually, donor material is p-type, and acceptor material is n-type.Therefore, donor-acceptor heterojunction belongs to special-shaped heterojunction.Although some characteristic is better, such as optical responsivity, the usual stability of photOFET of this structure is bad.In addition, acceptor material kind is less, limits the flexibility of device layout.
Summary of the invention
The object of the invention is to the deficiency overcoming above special-shaped heterojunction photosensitive organic field effect transistor, propose a kind of with the heterogeneous photosensitive organic field effect transistor becoming active layer of homotype, with the flexibility of the stability and device layout that improve photosensitive organic field effect transistor.
The object of the present invention is achieved like this: when photosensitive layer material is p-type, selects high mobility p-shaped material as channel layer; And if when photosensitive layer is n-type material, select high mobility n-type material as channel layer.Secondly, it can adopt the structure of contact or top grid top contact at the bottom of contact at the bottom of bottom gate, bottom gate top contact, top grid.The homotype planar heterojunction photosensitive organic field effect transistor of inventing according to above-mentioned technical thought comprises substrate, grid, gate medium, organic channels layer, photosensitive organic layer, source electrode and drain electrode, and wherein organic channels layer and photosensitive organic layer are homotype organic semiconducting materials.Photosensitive organic layer has the high absorption coefficient of light, effectively can receive light energy, produces many photo-generated carriers.And organic channels layer has high carrier mobility, thus form large photoelectric current.
Accompanying drawing explanation
Fig. 1 is photosensitive organic field effect transistor basic structure schematic diagram (for bottom gate top contact structure);
Fig. 2 is active layer schematic diagram of the present invention (for bottom gate top contact structure) when being p-p homotype heterojunction;
Fig. 3 is active layer schematic diagram of the present invention (for bottom gate top contact structure) when being n-n homotype heterojunction.
Embodiment
With heavy doping n +-Si/SiO 2for grid/gate medium, and double as substrate, phthalocyanine Pb is photosensitive layer, and pentacene is channel layer (p-p homotype heterojunction), adopts the preparation process of the present invention of bottom gate top contact as follows:
A) n is cleaned with standard technology +-Si/SiO 2substrate;
B) use vacuum evaporation method at n +-Si/SiO 2one deck pentacene prepared by substrate as p-type organic channels layer;
C) on pentacene, preparing phthalocyanine Pb by vacuum evaporation method is photosensitive layer
D) prepare metallic film (as Au) thereon as drain electrode and source electrode by vacuum evaporation method, channel length and electrode area are limited by mask plate;
E) device package will made.

Claims (4)

1. a homotype planar heterojunction photosensitive organic field effect transistor, it is characterized in that it is made up of substrate, grid, gate medium, organic charge carrier transport layer, organic photosensitive layer, source electrode and drain electrode, and organic charge carrier transport layer is identical with the conduction type of organic photosensitive layer, form homotype heterojunction, improve the flexibility of device layout.
2. homotype planar heterojunction photosensitive organic field effect transistor according to claim 1, it is characterized in that, organic charge carrier transport layer is connected with gate medium first, and another side is connected with homotype organic photosensitive layer, forms homotype planar heterojunction.
3. homotype planar heterojunction photosensitive organic field effect transistor according to claim 1, is characterized in that, organic photosensitive is laminated to be connected with organic charge carrier transport layer, and with its formation homotype planar heterojunction, another side is connected with draining with source electrode.
4. homotype planar heterojunction photosensitive organic field effect transistor according to claim 1, is characterized in that it can adopt the structure of contact or top grid top contact at the bottom of contact at the bottom of bottom gate, bottom gate top contact, top grid.
CN201310503428.3A 2013-10-23 2013-10-23 Homotype plane heterojunction photosensitive organic field effect transistor Pending CN104576927A (en)

Priority Applications (1)

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CN201310503428.3A CN104576927A (en) 2013-10-23 2013-10-23 Homotype plane heterojunction photosensitive organic field effect transistor

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107134527A (en) * 2017-06-27 2017-09-05 京东方科技集团股份有限公司 A kind of thin film transistor (TFT), the preparation method of thin film transistor (TFT) and electronic equipment
CN113380953A (en) * 2021-07-05 2021-09-10 苏州大学 Ultraviolet light transistor based on organic crystalline heterojunction and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070257256A1 (en) * 2006-05-03 2007-11-08 Seiko Epson Corporation Photosensing thin film transistor
CN202736984U (en) * 2012-04-27 2013-02-13 兰州大学 Schottky contact organic photosensitive field effect tube
CN203617346U (en) * 2013-10-23 2014-05-28 兰州大学 Homotype planar heterojunction photosensitive organic field effect transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070257256A1 (en) * 2006-05-03 2007-11-08 Seiko Epson Corporation Photosensing thin film transistor
CN202736984U (en) * 2012-04-27 2013-02-13 兰州大学 Schottky contact organic photosensitive field effect tube
CN203617346U (en) * 2013-10-23 2014-05-28 兰州大学 Homotype planar heterojunction photosensitive organic field effect transistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
HAIBO WANG, ET AL.: "p-p isotype organic heterojunction and ambipolar field-effect transistors", 《APPLIED PHYSICS LETTERS》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107134527A (en) * 2017-06-27 2017-09-05 京东方科技集团股份有限公司 A kind of thin film transistor (TFT), the preparation method of thin film transistor (TFT) and electronic equipment
CN113380953A (en) * 2021-07-05 2021-09-10 苏州大学 Ultraviolet light transistor based on organic crystalline heterojunction and preparation method thereof
CN113380953B (en) * 2021-07-05 2022-08-30 苏州大学 Ultraviolet light transistor based on organic crystalline heterojunction and preparation method thereof

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Application publication date: 20150429