CN104576925A - Method for preparing nano bowl-shaped phase change memory unit - Google Patents
Method for preparing nano bowl-shaped phase change memory unit Download PDFInfo
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- CN104576925A CN104576925A CN201310498066.3A CN201310498066A CN104576925A CN 104576925 A CN104576925 A CN 104576925A CN 201310498066 A CN201310498066 A CN 201310498066A CN 104576925 A CN104576925 A CN 104576925A
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Abstract
The invention relates to a method for preparing a nano structure material for a novel semiconductor memory, in particular relates to a method for preparing a nano bowl-shaped phase change memory unit, and aims to prepare a nano bowl array and a nano bowl-shaped top electrode made of a phase change material such as GeSbTe or GeTe by taking a nano colloidal sphere array in a two-dimensional order. By adopting the hollow nano bowl-shaped phase change memory unit, the loss of heat from the electrode in the amorphous to polycrystal conversion process of the phase change material is reduced, the contact area of the phase change material with a lower electrode is reduced, the current density is improved, and the operation current of a device is reduced.
Description
Technical field
The present invention relates to a kind of preparation method that can be applicable to the nano structural material that novel semi-conductor stores, the preparation method of the bowl-shape phase-changing memory unit of a kind of nanometer specifically.
Background technology
Phase-change random access memory (phase change random access memory, PCM) utilizes the crystalline state of chalcogenide compound (as GeSbTe or GeTe etc.) and amorphous resistance height to realize data to store.Phase transition storage have non-volatile, have extended cycle life, device size is little, speed is fast, Flouride-resistani acid phesphatase, can the advantage such as dynamic data attemper.
Phase transition storage is made up of many phase-change memory cells.Each phase-change memory cell comprises three essential parts such as top electrode, phase change medium, hearth electrode, and current phase-change memory cell preparation utilizes traditional photoetching technique to realize, and therefore each phase-change memory cell is by flat film Structure composing.Storage density to be improved further, the lateral dimension of data storage cell will be reduced, at present, also there are some technical problems, such as crosstalk effect under high density between memory cell and how to reduce the operation power consumption etc. of device cell further.
Summary of the invention
The object of the invention is for the problems referred to above, be intended to utilize the nano-colloid spherical array of sequential 2 D to be classified as template to prepare nano bowl array and the bowl-shape top electrode of nanometer of the phase-change materials such as GeSbTe or GeTe, the preparation method of the bowl-shape phase-change memory cell of a kind of nanometer is proposed, the bowl-shape memory cell of this hollow Nano, can reduce phase-change material in amorphous and polymorphic transformation process heat from the dissipation of electrode, and the contact surface reduced between phase-change material and low electrode, improve current density, reduce device operating current.
The object of the present invention is achieved like this, and this preparation method comprises the following steps:
1., on Si or quartz substrate grow conductive film TiN or W, form hearth electrode.
2., self-assembling technique is utilized to prepare the colloid monolayer ball array of Large-Area-Uniform, ordered arrangement in step hearth electrode surface 1..
3., utilize plasma etching technology to step 2. in obtained colloid monolayer ball array etch, colloidal spheres in colloid monolayer ball array being carried out size Control and is separated, obtaining the colloid monolayer ball array with gap when not changing cycle and pattern.
4. inclination magnetron sputtering technique, is utilized, step 3. in obtain with the film GeSbTe or GeTe phase-change material preparing by the colloid monolayer ball array in gap, owing to forming the inducing action of curved substrate with colloidal spheres each in the colloid monolayer ball array in gap, each colloidal spheres is formed the nano bowl array of GeSbTe or GeTe phase-change material, the rim of a bowl down, the sputtering time of control GeSbTe or GeTe phase-change material, nano bowl sidewall is connected with hearth electrode, and without connecting between adjacent nano bowl.
5., step 4. in preparation phase-change material nano bowl battle array on sputter W or TiAlN thin film, form bowl-shape top electrode, control growth time, make it to be connected with hearth electrode, also do not connect between adjacent electrode.
6., utilize selective etching technology remove step 5. in the colloidal materials below the nano bowl of bowl-shape top electrode, obtain the bowl-shape phase-change material memory cell of nanometer, described nanometer bowl-shape phase-change material memory cell be by step 1. in the hearth electrode of preparation, step 3. in the bowl-shape phase-change material of preparation and step 4. in the top electrode of preparation form.
The present invention has the following advantages and good effect:
1, the present invention arranges as substrate with the colloid monolayer spherical array with gap, and utilizing magnetron sputtering technique to grow the film of GeSbTe or GeTe phase-change material and W or TiAlN thin film is top electrode material, obtains the bowl-shape phase-change material memory cell array of nanometer.Film growth is preparation process final step in the process, without the need to subsequent etching process, can obtain the undamaged phase-change material in border and the bowl-shape array of structures of electrode material nanometer;
2, the bowl-shape phase-change material memory cell of nanometer that prepared by the present invention is hollow structure, only has the edge of nano bowl to contact with hearth electrode, effectively reduces the contact area of heating electrode.When applying formed objects electric current, current density and heated by electrodes efficiency can be improved, thus reduce the reduction operating current realized required for phase transition process;
3, in the nanometer bowl-shape phase-change material memory cell array prepared of the present invention, adjacent phase transformation nano bowl is separated from one another, and also do not connect between adjacent electrode, the electrode heat range of scatter of electrode is greatly diminished, and reduces energy loss, reduces operating current.
Accompanying drawing explanation
Fig. 1 is the hearth electrode schematic diagram that the inventive method is prepared on a silicon substrate.
Fig. 2 is that the inventive method prepares colloidal spheres array schematic diagram on hearth electrode.
Fig. 3 is that the inventive method utilizes lithographic technique to carry out controlled separation schematic diagram to colloidal spheres array.
Fig. 4 is that the inventive method prepares phase-change material nano bowl schematic diagram on the colloidal spheres array be separated.
Fig. 5 is that the inventive method prepares the bowl-shape top electrode schematic diagram of nanometer.
Fig. 6 is the bowl-shape phase-change memory cell schematic diagram of nanometer formed after the inventive method gets rid of colloidal spheres.
Fig. 7 is the structural representation of the bowl-shape phase-change memory cell of nanometer that the inventive method obtains.
Detailed description of the invention
1., Si or quartz substrate are placed on by NH
4oH(analyze pure), H
2o
2(analyzing pure) and H
25 minutes are boiled in the mixed solution (volume ratio 1:2:6) that O is formed, then clean with deionized water rinsing, dry in an oven.Si after the drying or quartz substrate utilize magnetron sputtering technique growth thickness to be 10 nano conductive film TiN or W, forms hearth electrode (Fig. 1).In magnetic control sputtering system produced in USA (model is ATC 1800-F, USA AJA), preparation TiN or W film.Background air pressure in magnetic control sputtering system is 1.8 × 10
6torr, sputtering pressure be 2mTorr, Ar gas as protective gas, sputtering power is 20 watts.At this moment the sputter rate of TiN is 0.049 nm/sec (sputter rate of W is 0.057 nm/sec).
2., by step hearth electrode 1. in concentration be soak 24 hours in the sodium dodecyl sulfate solution of 10%, us can be made like this can to obtain hydrophilic hearth electrode surface.Get 10 milliliters to be 10wt.% purchased from Duke company concentration, to be of a size of the colloidal spheres emulsion of 200 nanometers, dilute with 10 milliliters of analytically pure ethanol.Get the diluted colloid emulsion of about 5 microlitre and drop in the substrate surface soaked, emulsion will be sprawled at substrate surface and come.Being immersed lentamente by substrate slice fills in the container of deionized water, and the cross-sectional area of container is 19.5 × 19.5 square centimeters, and the degree of depth is 10 centimetres.Due to water surface tension effect, form the monofilm of one deck colloidal spheres at water surface.And then in container, instill the sodium dodecyl sulfate solution that 4 lli are 2%.Fine and close colloidal particle monofilm will be formed at water surface, leave standstill about 10 minutes at ambient temperature.Utilizing in concentration is that colloidal particle monofilm gets by the substrate slice with hearth electrode soaked in the sodium dodecyl sulfate solution of 10%, just obtains the colloid monolayer ball array (Fig. 2) of growth on hearth electrode in atmosphere after natural volatile dry.
3., utilize plasma etching machine (model is 1020, and manufacturer is E.A. Fischione Instruments Inc) to step 2. in obtained colloid monolayer ball array etch.Working gas is 80% O
2during with 20% Ar, the colloidal particle array etch rate being 200 nanometers to diameter is 1 nm/sec, and the cycle of colloidal spheres array and the shape invariance of colloidal spheres, thus realize utilizing plasma etching technology that the colloidal spheres in colloid monolayer ball array is carried out to size Control and is separated.Etch 30 seconds to the colloidal particle array that diameter is 200 nanometers, colloidal spheres size becomes 170 nanometers, and the gap between colloidal spheres is 30 nanometers, and the cycle is still the colloid monolayer ball array (Fig. 3) with gap of 200 nanometers.
4., in magnetic control sputtering system produced in USA (model is ATC 1800-F, USA AJA), step 3. in obtain with the film GeSbTe or GeTe phase-change material preparing by the colloid monolayer ball array in gap.Background air pressure in magnetic control sputtering system is 1.8 × 10
6torr, sputtering pressure be 2mTorr, Ar gas as protective gas, sputtering power is 20 watts.At this moment the sputter rate of GeSbTe is 0.032 nm/sec (sputter rate of GeTe is 0.027 nm/sec).The sputtering time of control GeSbTe is 400 seconds (or the sputtering time of GeTe is 500 seconds), GeSbTe(or GeTe can prepared with in the colloid monolayer ball array in gap) the nano bowl array of phase-change material, the rim of a bowl down, nano bowl sidewall is connected with hearth electrode, and without connecting (Fig. 4) between adjacent nano bowl.
5., step 4. in preparation phase-change material nano bowl battle array on sputter W or TiAlN thin film 10 nanometer, form bowl-shape top electrode.Top electrode is not connected with hearth electrode, does not also connect (Fig. 5) between adjacent electrode.
6., the bowl-shape phase-variant material array of nanometer (comprising colloidal materials, hearth electrode and the Si below top electrode, the bowl-shape phase-variant material array of nanometer, the bowl-shape phase-variant material array of nanometer or quartz substrate) that 5. experience step obtains afterwards is immersed in analytically pure tetrahydrofuran solvent.Soak after 40 minutes, the bowl-shape phase-change material memory cell of nanometer can be obtained, described nanometer bowl-shape phase-change material memory cell be by step 1. in the hearth electrode of preparation, step 3. in the bowl-shape phase-change material of preparation and step 4. in the top electrode of preparation (shown in Fig. 6,7) of forming.
Claims (1)
1. a preparation method for the bowl-shape phase-changing memory unit of nanometer, is characterized in that: this preparation method comprises the following steps:
1., on Si or quartz substrate grow conductive film TiN or W, form hearth electrode;
2., self-assembling technique is utilized to prepare the colloid monolayer ball array of Large-Area-Uniform, ordered arrangement in step hearth electrode surface 1.;
3., utilize plasma etching technology to step 2. in obtained colloid monolayer ball array etch, colloidal spheres in colloid monolayer ball array being carried out size Control and is separated, obtaining the colloid monolayer ball array with gap when not changing cycle and pattern;
4. inclination magnetron sputtering technique, is utilized, step 3. in obtain with the film GeSbTe or GeTe phase-change material preparing by the colloid monolayer ball array in gap, owing to forming the inducing action of curved substrate with colloidal spheres each in the colloid monolayer ball array in gap, each colloidal spheres is formed the nano bowl array of GeSbTe or GeTe phase-change material, the rim of a bowl down, the sputtering time of control GeSbTe or GeTe phase-change material, nano bowl sidewall is connected with hearth electrode, and without connecting between adjacent nano bowl;
5., step 4. in preparation phase-change material nano bowl battle array on sputter W or TiAlN thin film, form bowl-shape top electrode, control growth time, make it to be connected with hearth electrode, also do not connect between adjacent electrode;
6., utilize selective etching technology remove step 5. in the colloidal materials below the nano bowl of bowl-shape top electrode, obtain the bowl-shape phase-change material memory cell of nanometer, described nanometer bowl-shape phase-change material memory cell be by step 1. in the hearth electrode of preparation, step 3. in the bowl-shape phase-change material of preparation and step 4. in the top electrode of preparation form.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10889887B2 (en) | 2016-08-22 | 2021-01-12 | Honeywell International Inc. | Chalcogenide sputtering target and method of making the same |
| CN112760707A (en) * | 2020-12-22 | 2021-05-07 | 南京师范大学 | TiO 22/PS colloidal photonic crystal, preparation method thereof and application thereof in humidity sensor |
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| US20060018156A1 (en) * | 2004-07-23 | 2006-01-26 | Thomas Happ | Memory device with thermal insulating layers |
| CN102097208A (en) * | 2009-12-09 | 2011-06-15 | 吉林师范大学 | Preparation method of magnetic multilayer-film nano bowl monolayer array |
| CN102117885A (en) * | 2010-11-30 | 2011-07-06 | 同济大学 | Nanometer composite multilayer phase change thin-film material for phase change memory |
| CN102199790A (en) * | 2010-03-23 | 2011-09-28 | 中国科学院合肥物质科学研究院 | Binary ordered colloidal crystal template and preparation method and use thereof |
| CN102877094A (en) * | 2011-07-15 | 2013-01-16 | 中国科学院合肥物质科学研究院 | Ordered hole array with gold-nanoparticle-based micro-nanometer composite structure and preparation method for ordered hole array |
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Patent Citations (5)
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| US20060018156A1 (en) * | 2004-07-23 | 2006-01-26 | Thomas Happ | Memory device with thermal insulating layers |
| CN102097208A (en) * | 2009-12-09 | 2011-06-15 | 吉林师范大学 | Preparation method of magnetic multilayer-film nano bowl monolayer array |
| CN102199790A (en) * | 2010-03-23 | 2011-09-28 | 中国科学院合肥物质科学研究院 | Binary ordered colloidal crystal template and preparation method and use thereof |
| CN102117885A (en) * | 2010-11-30 | 2011-07-06 | 同济大学 | Nanometer composite multilayer phase change thin-film material for phase change memory |
| CN102877094A (en) * | 2011-07-15 | 2013-01-16 | 中国科学院合肥物质科学研究院 | Ordered hole array with gold-nanoparticle-based micro-nanometer composite structure and preparation method for ordered hole array |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10889887B2 (en) | 2016-08-22 | 2021-01-12 | Honeywell International Inc. | Chalcogenide sputtering target and method of making the same |
| US11946132B2 (en) | 2016-08-22 | 2024-04-02 | Honeywell International Inc. | Chalcogenide sputtering target and method of making the same |
| CN112760707A (en) * | 2020-12-22 | 2021-05-07 | 南京师范大学 | TiO 22/PS colloidal photonic crystal, preparation method thereof and application thereof in humidity sensor |
| CN112760707B (en) * | 2020-12-22 | 2022-06-07 | 南京师范大学 | TiO 22/PS colloidal photonic crystal, preparation method thereof and application thereof in humidity sensor |
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