CN104576825A - 一种抑制SiC紫外光电探测器暗电流方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 230000000452 restraining effect Effects 0.000 title abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 230000003647 oxidation Effects 0.000 claims description 17
- 238000007254 oxidation reaction Methods 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 2
- 239000010409 thin film Substances 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000001629 suppression Effects 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000000825 ultraviolet detection Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
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- 239000011248 coating agent Substances 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
本发明公开了一种抑制SiC紫外光电探测器暗电流方法，根据SiC光电探测器暗电流产生的来源及抑制他们的原理，利用不同生长方法在SiC紫外探测器器件表面制备SiO2和SiN薄膜，分别考虑高低电场条件下各种薄膜对暗电流的抑制能力以及有效减少载流子在器件表面的复合，综合组合多层介质膜结构及生长技术条件，可进一步实现对SiC紫外光电探测器暗电流的抑制，有效提高其探测率。
Description
技术领域
本发明涉及一种抑制暗电流的方法，具体地说，涉及一种抑制SiC紫外光电探测器暗电流方法。
背景技术
紫外光电探测器在国防和民用领域有巨大的应用背景，半导体紫外光电探测器是其中重要的产品之一。采用SiC材料制备紫外探测器具有量子效率高，暗电流低，可见光盲等优点。影响SiC紫外探测器的探测率的重要因素是器件的暗电流，目前常用抑制暗电流的方法采用SiO2、SiN或其他介质膜钝化的方式，但是采用的工艺没有考虑器件在实际工作条件下暗电流不同产生机制，对暗电流的抑制效果还有待改善。由于紫外信号源强度一般都比红外信号弱，因此要求具有比红外探测更高性能的探测率才能满足紫外探测需求，需要根据探测器在不同条件下暗电流的产生机制，有针对性的采用不同的工艺手段，进一步抑制暗电流，提高器件的探测率是实现微弱紫外信号探测的重要技术手段。
发明内容
本发明的目的在于克服上述技术存在的缺陷，提供一种抑制SiC紫外光电探测器暗电流方法，根据SiC光电探测器暗电流产生的来源及抑制他们的原理，利用不同生长方法在SiC紫外探测器器件表面制备SiO2和SiN薄膜，分别考虑高低电场条件下各种薄膜对暗电流的抑制能力以及有效减少光生载流子在器件表面的复合，制备组合多层介质膜结构，优化生长技术条件，可进一步实现对SiC紫外光电探测器暗电流的抑制，有效提高其探测率。
其具体技术方案为：
一种抑制SiC紫外光电探测器暗电流方法，包括以下步骤：
步骤1：利用SiC的特点，在材料的Si面上干氧热氧化生长牺牲层，在1000度高温干氧气氛中在SiC表面生长一层SiOx，然后用氢氟酸去除并用热去离子水快速冲洗，可以有效减少器件表面的载流子复合中心密度；
步骤2：用干燥纯氮气快速吹干并立即置入氧化炉中，通过快速升温至1000度，先干氧氧化1小时，然后湿氧氧化4小时，再干氧氧化1小时，形成约60nm后的SiOx层，在炉温不变的条件下，用氮气退火1小时，然后自然降温，在器件表面形成致密度很高的SiOx层；热氧化生成的SiOx膜可以有效抑制在器件边缘高电场下的暗电流并提高其击穿电压；
步骤3：采用PECVD方法在热氧化SiOx薄膜上再生长一层300nm的SiOx层，以抑制低电场下的暗电流；
步骤4：最后再采用PECVD方法生长200nmSiN薄膜，作为钝化层，减小表面的载流子复合引起的暗电流。
与现有技术相比，本发明的有益效果为：
本发明根据SiC光电探测器暗电流产生的来源及抑制他们的原理，利用不同生长方法在SiC紫外探测器器件表面制备SiO2和SiN薄膜，分别考虑高低电场条件下各种薄膜对暗电流的抑制能力以及有效减少光生载流子在器件表面的复合，制备组合多层介质膜结构及优化生长技术条件，可进一步实现对SiC紫外光电探测器暗电流的抑制，有效提高其探测率。
具体实施方式
为了使本发明实现的技术手段、创作特征、达成目的与功效易于明白了解，下面结合具体实例进一步阐述本发明。
一种抑制SiC紫外光电探测器暗电流方法，包括以下步骤：
步骤1：利用SiC的特点，在材料的Si面上干氧热氧化生长牺牲层，在1000度高温干氧气氛中在SiC表面生长一层SiOx，然后用氢氟酸去除并用热去离子水快速冲洗，可以有效减少器件表面的载流子复合中心密度；
步骤2：用干燥纯氮气快速吹干并立即置入氧化炉中，通过快速升温至1000度，先干氧氧化1小时，然后湿氧氧化4小时，再干氧氧化1小时，形成约60nm后的SiOx层，在炉温不变的条件下，用氮气退火1小时，然后自然降温，在器件表面形成致密度很高的SiOx层；热氧化生成的SiOx膜可以有效抑制在器件边缘高电场下的暗电流并提高其击穿电压；
步骤3：采用PECVD方法在热氧化SiOx薄膜上再生长一层300nm的SiOx层，以抑制低电场下的暗电流；
步骤4：最后再采用PECVD方法生长200nmSiN薄膜，作为钝化层，减小表面的载流子复合引起的暗电流。
本发明在SiC探测器制备过程中，通过对热氧化生长的SiOx膜的氮气退火，改善了SiOx的膜的致密度，在氢氟酸腐蚀实验中，其抗腐蚀能力有所改善，用PECVD生长的SiN薄膜覆盖SiOx薄膜，提高了组合膜的质量。采用本方法，制备了光敏面积约0.04mm2的SiC探测器，测量了器件的暗电流，光谱响应，与常规的钝化保护措施相比，器件的暗电流下降到0.1pA，大约低了一个数量级，反向击穿特性得到改善，光谱响应度提高约3％，紫外可见光响应比也略有提高，结果表明，在SiC紫外探测器制备上采用本方法，可以提高其紫外探测率，也为制备更大光敏面积、雪崩型探测器提供有效的技术支持。
以上所述，仅为本发明最佳实施方式，任何熟悉本技术领域的技术人员在本发明披露的技术范围内，可显而易见地得到的技术方案的简单变化或等效替换均落入本发明的保护范围内。
Claims (1)
1.一种抑制SiC紫外光电探测器暗电流方法，其特征在于，包括以下步骤：
步骤1：利用SiC的特点，在材料的Si面上干氧热氧化生长牺牲层，在1000度高温干氧气氛中在SiC表面生长一层SiOx，然后用氢氟酸去除并用热去离子水快速冲洗；
步骤2：用干燥纯氮气快速吹干并立即置入氧化炉中，通过快速升温至1000度，先干氧氧化1小时，然后湿氧氧化4小时，再干氧氧化1小时，形成60nm后的SiOx层，在炉温不变的条件下，用氮气退火1小时，然后自然降温，在器件表面形成SiOx；
步骤3：采用PECVD方法在热氧化SiOx薄膜上再生长一层300nm的SiOx层；
步骤4：最后再采用PECVD方法生长200nmSiN薄膜，作为钝化层。
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109686844A (zh) * | 2018-12-10 | 2019-04-26 | 宁波大学 | 一种基于钙钛矿自供电行为的光敏传感器 |
| CN110392184A (zh) * | 2018-04-16 | 2019-10-29 | 宁波飞芯电子科技有限公司 | 基于静态门限电压的像素单元与光电调制方法及其应用 |
| CN115000229A (zh) * | 2022-06-09 | 2022-09-02 | 太原理工大学 | 一种暗电流抑制的半绝缘型4H-SiC基紫外光电探测器及制备方法 |
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| CN109686844A (zh) * | 2018-12-10 | 2019-04-26 | 宁波大学 | 一种基于钙钛矿自供电行为的光敏传感器 |
| CN115000229A (zh) * | 2022-06-09 | 2022-09-02 | 太原理工大学 | 一种暗电流抑制的半绝缘型4H-SiC基紫外光电探测器及制备方法 |
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