CN104576677A - Wafer scale thermoelectric energy harvester - Google Patents
Wafer scale thermoelectric energy harvester Download PDFInfo
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- CN104576677A CN104576677A CN201410591544.XA CN201410591544A CN104576677A CN 104576677 A CN104576677 A CN 104576677A CN 201410591544 A CN201410591544 A CN 201410591544A CN 104576677 A CN104576677 A CN 104576677A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
Abstract
The invention relates to a wafer scale thermoelectric energy harvester. An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer. The p-type thermoelectric elements and the n-type thermoelectric elements may be connected in series while alternating between the p-type and the n-type thermoelectric elements.
Description
Related application
The application is the extendible portion of the U. S. application No.13/736783 in submission on January 8th, 2013, is incorporated to by reference at this.
Technical field
The theme of the application relates to a kind of thermoelectric energy gatherer, and relates more specifically to a kind of integrated single-chip thermoelectric energy gatherer.
Background technology
Thermal power unit converts heat (such as, thermal energy) to electric energy.Temperature difference between the hot side of thermoelectric device and cold side moves electric charge carrier in the semi-conducting material of thermal power unit to produce electric energy.The material of thermal power unit through selecting to make it be the good conductor of electricity, with the flowing of generation current, but the non-conductor of heat, to keep heat required between the both sides of thermal power unit poor.When the side of thermoelectric element is placed near thermal source (such as, engine or circuit), when making the side of thermal power unit hotter, temperature difference can be produced.
The energy generated by thermal power unit at least depends on the type of material and the size of thermoelectric element in the temperature difference, thermal power unit.Such as, the larger temperature difference between the hot side and cold side of equipment can produce more electric current.In addition, the thermal power unit with the larger material of large surface area and/or generation current is conventionally producing more electric energy.These Different factor depend on that thermal power unit is adjusted by the application used.
People are more and more concerned about that the size of reduction thermal power unit is for new application (such as, control oneself and resume sensor or mobile device), and produce the thermal power unit that it can be a part for integrated circuit.But the size reducing thermal power unit introduces new challenge, such as produce enough energy and keep manufacturing cost lower.In addition, the traditional material in thermal power unit and/or arrangement of materials can not provide required energy for some application.Other challenges comprise the parasitic heat loss that process affects adjacent component in integrated circuits.
Therefore, the present inventor to have determined that this area needs to comprise high-energy-density, cost low and solve the small-scale thermal power unit of parasitic heat loss.
Accompanying drawing explanation
Therefore, be appreciated that feature of the present invention, some accompanying drawings describe as follows.But figures only show specific embodiment of the present invention appended by it should be pointed out that, therefore should not be regarded as limiting its scope, because the present invention can comprise other Equivalent embodiments.
Figure 1A and 1B illustrates the exemplary configuration of the thermoelectric energy gatherer according to the embodiment of the present invention.
Fig. 2 illustrates the stereogram of the thermoelectric energy gatherer 100 according to the embodiment of the present invention.
Fig. 3 illustrates the exemplary configuration of thermoelectric energy gatherer according to another embodiment of the present invention.
Fig. 4 illustrates according to embodiments of the invention, has the example arrangement of the thermoelectric energy gatherer of closed-end structure.
Fig. 5 illustrates the exemplary configuration of thermoelectric energy gatherer according to another embodiment of the present invention.
Fig. 6 illustrates the exemplary configuration of thermoelectric energy gatherer according to another embodiment of the present invention.
Fig. 7 illustrates the exemplary configuration of thermoelectric energy gatherer according to another embodiment of the present invention.
Fig. 8 shows the shape of the thermoelectric element according to the embodiment of the present invention.
Embodiment
The embodiment of the present invention can provide the thermoelectric energy that can provide in integrated circuits collector.In one embodiment, the integrated circuit dielectric layer that can comprise substrate and be formed on substrate.Multiple p-type thermoelectric element and multiple N-shaped thermoelectric element can be placed in dielectric layer.This p-type thermoelectric element and N-shaped thermoelectric element can be electrically connected in series in an alternating fashion.In response to the heat of side being applied to thermoelectric element, electron stream can be produced in each thermoelectric element, to provide electric energy.
In another embodiment, lid can be set on substrate and be arranged on substrate and the multiple p-type be connected in series and N-shaped thermoelectric element to surround, and replace between p-type and N-shaped thermoelectricity simultaneously.Vacuum or low pressure can remain between thermoelectric element.Lid and vacuum or low pressure can reduce parasitic heat and be lost to region around integrated circuit, thus maintenance is along the larger thermal gradient of thermoelectric element.
Figure 1A illustrates the exemplary configuration of the thermoelectric energy gatherer 100 according to the embodiment of the present invention.Thermoelectric energy gatherer 100 can be included on substrate layer 130 and multiple thermoelectric element 110A, 110B in dielectric layer 120.Thermoelectric element 110A, 110B can comprise the element (such as, p-type and N-shaped) of dissimilar thermoelectric material.Thermoelectric element 110A, 110B can be interconnected, each thermoelectric element is made to contribute to by thermoelectric energy gatherer 100 corresponding to the first side (such as, hot side) and the second side (such as, cold side) between the gross energy that provides of temperature gradient.Thermo-contact layer 140 can provide above dielectric layer 120, to support the temperature gradient between the first side and the second side.Thermo-contact layer 140 can be made up of the material as good thermal conductor.
As shown in Figure 1A, thermoelectric energy gatherer 100 can comprise the vertical stratification that dielectric layer 120 provides, and can be formed as single-chip.The wafer level structure of thermoelectric energy gatherer 100 allow it with substrate 130 on or other integrated circuit components (not shown in Figure 1A) of being close to integrate.
As shown, thermoelectric element 110A, 110B can comprise dissimilar thermoelectric material (such as, p-type and N-shaped).The thermoelectric material of thermoelectric element 110A, 110B can be selected, to produce the flowing of the electric charge carrier of the opposed polarity from one end of thermoelectric element to the other end in response to the temperature difference between two ends.In the thermoelectric element 110A comprising p-type material, positive charge carrier flow to relative cold junction from hot junction.On the other hand, in the thermoelectric element 110B comprising N-shaped material, electronics flow to colder opposite end from the one end with thermal source.
Multiple thermoelectric element 110A, 110B can be connected to array, and replace the type (such as, N-shaped and p-type) of the material in adjacent heat electric device 110A and 110B.In this manner, together with the voltage of leap thermoelectric element 110A with 110B exploitation and/or electric current can be added, to produce the larger gathering voltage and/or electric current that exceed thermoelectric element 110A and 110B respectively.Such as, the thermoelectric element 110A with p-type material can be connected in series the thermoelectric element 110B with n-type material.Thermoelectric element 110A, 110B can be arranged, and make all adjacent heat electric devices of given thermoelectric element comprise the material type of the material being different from given thermoelectric element.The output of the array of thermoelectric element 110A and 110B can be connected in parallel the energy provided needed for application-specific.Interconnection line 150 can connect thermoelectric element 110A and 110B to adjacent thermoelectric element 110A and 110B.
Although each thermoelectric element 110A, 110B can provide a small amount of energy (as millivolt), connection thermoelectric element 110A, 110B can provide the more high-energy required for application-specific in an array.When on the side that heat is applied to thermoelectric energy gatherer 100, the electronics had in the thermoelectric element 110A of p-type material will flow to the hot side of thermoelectric element 110A from low temperature side, and the electronics of thermoelectric element 110B with N-shaped material 110B is from hot effluent to the cold side of thermoelectric element 110B.Therefore, if thermoelectric element 110A is connected in series thermoelectric element 110B, define thermocouple, electronics flows to the hot side of p-type material from the cold side of p-type material, via the hot side of interconnection 150 to N-shaped material, and enters the cold side of N-shaped material.The energy produced in each thermoelectric element 110A, 110B is merged, and provides at the output of thermoelectric energy gatherer 100.
Figure 1B illustrates the circuit being equivalent to the thermoelectric energy gatherer 100 shown in Figure 1A.The voltage crossing over thermoelectric element 110A and 110B exploitation is represented by Vp and Vn.Each voltage and/or electric current can be added together, and to provide and integrated output voltage Vout, and when stretching, voltage is added, to obtain the useful voltage of exemplary low power electronic circuit of powering.
Figure 1A not to scale (NTS) is drawn, but describes the thick size of gatherer 100 in one embodiment.Thermoelectric element 110A, 110B can have the shape maximizing and be adjacent to the surface of thermoelectric element 110A, 110B of dielectric layer 120, thermoelectric element 110A, 110B can have rectangular shape, have the side adjacent dielectric 120 compared with long end portion, minor face is adjacent to interconnection 150.In another embodiment, at least side of thermoelectric element 110A, 110B can be square.
The material of thermoelectric element 110A, 110B can, through selecting with the thermal resistance making the thermal resistance of thermoelectric element 110A, 110B be less than dielectric layer 120, make this dielectric layer can not cause too many thermal shunt.The high-fire resistance of thermoelectric element 110A, 110B still needs the good temperature difference guaranteeing to maintain between the hot side and cold side of thermoelectric element 110A, 110B.The thermal resistance of thermoelectric element 110A, 110B by controlling the doped level of thermoelectric element 110A, 110B or increasing with the photon equilibrium state improving thermoelectric element 110A, 110B by introducing dispersing element, and can not affect too many conductivity.Compared with the opposite end of thermoelectric element 110A, 110B, the concentration of doped level or dispersing element can increase in one end of thermoelectric element 110A, 110B or reduce.
Such as, thermoelectric element 110A can be p-type BixSb2-xTe3, p-type Bi2Te3/Sb2Te3 superlattice or p-type Si/Si (1-x) Re Kesi superlattice, and thermoelectric element 110B can be N-shaped Bi2Te3-xSex, N-shaped Bi2T3/Bi2Te (3-x) oppositely superlattice or N-shaped Si/Si (1-x) Re Kesi superlattice.Dielectric layer 120 can be polyimides, and it has low thermal conductivity, and it contributes to processing thermoelectric element.Thermo-contact layer 140 can be the layer of any electric insulation but heat conduction.In one embodiment, thermo-contact layer 140 can be made up of multilayer.Such as, thermo-contact layer 140 can comprise thin non-conductive layer, and such as oxide or nitride and one or more layers thicker metal level, to improve heat transfer.Thermo-contact layer 140 can be provided to the insulation of interconnect layers 150 in interface, to prevent the electrical short of interconnect layers 150.Substrate 130 can be any Semiconductor substrate with adequate thickness, to promote the heat transfer of bottom side.Although illustrate that the thermo-contact layer 140 that substrate 130 is configured to cold side and top is configured to hot side, this equipment can also as hot side together with substrate 130, and the thermo-contact layer 140 at top is as cold side.
On the hot side that this interconnection 150 can be included in thermoelectric element and cold side, to connect adjacent thermoelectric element.This thermoelectric element can comprise first interconnection of being coupled on the hot side of the first thermoelectric element and the second interconnection be connected on the cold side of the second thermoelectric element.Can be the lead-out terminal being connected to other circuit element (such as, external circuit, load or energy storage device) in the interconnection 150 of first and last thermoelectric element 110A, 110B.Interconnection 150 can comprise semi-conducting material or metal connector (such as, gold, copper or aluminium).
In this exemplary embodiment, dielectric layer 120 can be the material of high dielectric breakdown, such as polyimides, silicon dioxide, silicon nitride etc.Dielectric layer 120 can electric insulation thermoelectric element 110A, 110B.Dielectric layer 120 can suppress the conduction of heat from thermoelectric element 110A, 110B.Dielectric layer 120 can have than substrate 130 and/or the low thermal conductivity of thermoelectric element 110A, 110B.Dielectric layer 120 can on four limits around thermoelectric element 110A, 110B, allows thermal gradient to cross over thermoelectric element 110A, 110B exploitation, with the side allowing most of heat to proceed to thermoelectric energy gatherer 100 with thermal shunt thermoelectric element 110A, 110B.Compare with the thermal endurance of substrate 130 and/or thermo-contact layer 140, the superior heat resistance of thermoelectric element 110A, 110B makes available thermal gradient to stride across thermoelectric element and fall instead of thermo-contact layer or substrate 130.Therefore, maximum temperature difference is maintained between the hot side of thermoelectric element 110A, 110B and cold side.
Building metal 160 can be included in isolate the semi-conducting material and metal interconnected 150 of thermoelectric element 110A, 110B between thermoelectric element 110A, 110B and interconnection 150, keeps the electrical connection between thermoelectric element 110A, 110B and interconnection 150 simultaneously.Barrier metal 160 can be included to prevent interconnection 150 to be diffused into the semi-conducting material of thermoelectric element 110A, 110B.
When heat is applied to side (such as, hot side) of thermoelectric energy gatherer 100, electronics in a direction, and to flow in another direction in the thermoelectric element with p-type material 110A in the thermoelectric element 110B with N-shaped material.Because thermoelectric element 110A, 110B are connected in series, the energy produced at each thermoelectric element 110A, 110B is combined, to provide combined energy in the output of thermoelectric energy gatherer 100.The heat imported into is distributed to the hot side of thermoelectric element 110A, 110B by thermo-contact layer 140, and the cold side of substrate 130 heat of cooling electric device 110A, 110B.
Fig. 2 illustrates the stereogram of the thermoelectric energy gatherer 200 according to the embodiment of the present invention.As shown in Figure 2, thermoelectric element 210A, 210B is arranged on substrate layer 230.Dielectric layer 220 is provided on substrate layer with thermoelectric element 210A, 210B electrically isolated from one.Thermoelectric element 210A, 210B can be arranged to array, make thermoelectric element 210A, 210B and replace the material type (such as, N-shaped and p-type) in adjacent heat electric device 210A and 210B.Interconnection 250 can be connected in series thermoelectric element 210A, 210B.Thermo-contact layer 240 dispersibles and applies heat to thermoelectric element 210A, 210B.
Fig. 3 illustrates the example arrangement of thermoelectric energy gatherer 300 in accordance with another embodiment of the present invention.Thermoelectric energy gatherer 300 can be included in multiple thermoelectric element 310A, 310B in the dielectric layer 320 of substrate layer 330 above and on substrate layer 330.Thermoelectric element 310A, 310B can be arranged to array, and replace the material category (such as, between N-shaped and p-type) of adjacent heat electric device 310A and 310B.Multiple thermoelectric element 310A, 310B can be connected in series via interconnection 350.Thermo-contact layer 340 can provide on thermoelectric element 310A, 310B, is applied to the heat of thermoelectric energy gatherer 300 to dissipate.
Thermoelectric energy gatherer 300 can comprise the additional substrate layers 370 between thermo-contact layer 340 and dielectric layer 320.Substrate layer 370 can have high thermal conductivity to dispel the heat from external heat source.Substrate layer 370 can be aluminium nitride substrate.
Thermoelectric energy gatherer 300 can be included in the one or more circuit elements 380 on substrate 330 and/or on the surface of substrate 330.Circuit element 380 can the lead-out terminal of Coupling Thermal electric flux gatherer 300.Circuit block 380 can receive the energy and/or control thermoelectric energy gatherer 300 that are produced by thermoelectric energy gatherer 300.Circuit element 380 can be the parts (such as, onboard sensor, medical implant and/or wireless senser) of the transducer of being powered by thermoelectric energy gatherer 300.In one embodiment, electric current can be provided to thermoelectric element 310A, 310B in thermoelectric energy gatherer 300 via circuit element 380, to be used as cooler.The thermoelectric energy gatherer 300 serving as cooler can cool in substrate 330 or close on or circuit element 380 on the surface of base class 330.The electric current being applied to thermoelectric element 310A, 310B can produce the movement of electric charge carrier, creates the temperature contrast between stream thermoelectric energy gatherer 300 both sides that can be used for cooling circuit element 380.
Building metal 360 can be included in isolate the semi-conducting material and metal interconnected 350 of thermoelectric element 310A, 310B between thermoelectric element 310A, 310B and interconnection 350, keeps the electrical connection between thermoelectric element 310A, 310B and interconnection 350 simultaneously.
Fig. 4 illustrates the example arrangement with the thermoelectric energy gatherer 400 of cap structure according to the embodiment of the present invention.Thermoelectric energy gatherer 400 can comprise thermoelectric element 410A, 410B that capping substrate 470 provides to be enclosed in substrate 430 above.Capping substrate 470 can allow low pressure or vacuum to remain between substrate 430 and capping substrate 470.
Capping substrate 470 can surround thermoelectric element 410A, 410B of covering between substrate 470 and substrate 410.Capping substrate 470 can be attached to substrate 410 at reduced pressure or vacuum, and lower pressure or vacuum are provided around thermoelectric element 410A, 410B.
Capping substrate 470 and/or low-pressure or vacuum can reduce the parasitic thermal loss of thermoelectric element 410A, 410B peripheral region.The parasitic thermal loss reduced makes thermoelectric energy gatherer 400 can be scaled, and comprises the part as integrated circuit.Make together with other circuit can be included in thermoelectric energy gatherer 400 in the parasitic heat loss of the reduction of little grade.
Capping substrate 470 can allow to collect more energy by described thermoelectric energy gatherer 400.Vacuum or low pressure allow the temperature gradient between the hot side between thermoelectric element 410A, 410B and cold side to maximize.
Be similar to the embodiment shown in Fig. 1-3, thermoelectric element 410A, 410B can be disposed in the array with alternative materials type (such as, N-shaped and p-type) in adjacent thermoelectric element 410A and 410B.Multiple thermoelectric element 410A, 410B can be connected in series via interconnection 450.Thermo-contact layer 440 can be provided by above-mentioned thermoelectric element 410A, 410B, arrives described thermoelectric element 410A, 410B to make dissipate heat.
Building metal 460 can be included between thermoelectric element 410A, 410B and interconnection 450, to isolate thermoelectric element 410A, 410B and interconnection 450, and keeps the electrical connection between thermoelectric element 410A, 410B and interconnection 450.
In one embodiment, before bonding capping substrate 470 to substrate 430, p-type and N-shaped thermoelectric element can all be arranged on one of capping substrate 470 and substrate 430.In another embodiment, before capping substrate 470 is engaged to substrate 430, p-type thermoelectric element can be arranged on one of capping substrate 470 and substrate 430, and when N-shaped thermoelectric element may be provided in another in capping substrate 470 and described substrate 430.Bonding covers substrate 470 and to be coupled p-type thermoelectric element and N-shaped thermoelectric element to substrate 430.
As Fig. 1-4, thermoelectric element is shown as the vertical stratification with rectangle.But thermoelectric element can comprise various shape and orientation.
Fig. 5 illustrates the example arrangement of thermoelectric energy gatherer 500 according to another embodiment of the present invention.Thermoelectric energy gatherer 500 can be included on substrate layer 530 and multiple thermoelectric element 510A, 510B in dielectric layer 520 on substrate layer 530.Thermoelectric element 510A, 510B can be arranged to array, and in adjacent thermoelectric element 510A and 510B alternative materials kind (such as, between N-shaped and p-type).Multiple thermoelectric element 510A, 510B can be connected in series via interconnection 550.Thermo-contact layer 540 can by above-mentioned thermoelectric element 510A, 510B provide, dissipate and be applied to the heat of thermoelectric energy gatherer 500.
As shown in Figure 5, thermoelectric element 510A and 510B tilts.In addition, thermoelectric element 510A and 510B can be included in the connecting portion 510C on the one or both ends of thermoelectric element 510A and 510B, and this thermoelectric element 510A and 510B is connected to interconnection.Dielectric layer 520 can allow described thermoelectric element 510A and 510B to comprise various shape and direction.The direction of thermoelectric element 510A and 510B and/or shape can change based on free space, for thermoelectric energy gatherer 500 and/or system performance requirements.The various shapes of thermoelectric element 510A, 510B allow thermoelectric energy gatherer 500 to have half vertical or accurate transversary.Relative to the vertical thermal electric device shown in Fig. 1, these shapes of thermoelectric element 510A, 510B can allow the thickness of thermoelectric energy gatherer 500 to reduce.Longer tilt length can provide the equipment thermal impedance of enhancing.When 510A and 510B is superlattice, equipment performance along tilt length along with heat and conductivity, or when superlattice 510A and 510B along during inclined plane along deposition quantum well improvement.The orientation changing thermoelectric element 510A and 510B can reduce available space (such as, vertical space), improves the surface area being adjacent to thermoelectric element 510A and 510B of dielectric layer 520 to greatest extent simultaneously.
Fig. 6 illustrates the example arrangement of thermoelectric energy gatherer 600 according to another embodiment of the present invention.Thermoelectric energy gatherer 600 can be included in multiple thermoelectric element 610A, 610B between the first heating conductor layer 620 and the second heating conductor layer 630.Thermoelectric element 610A, 610B can comprise the alternate element (such as, p-type and N-shaped) of dissimilar thermoelectric material.Thermoelectric element 610A, 610B can be interconnected by electricity, make in response to the first side (such as, hot side) and the second side between the temperature gradient of (as cold junction), each thermoelectric element contributes to the gross energy provided by thermoelectric energy gatherer 600.First heating conductor layer 620 and the second heating conductor layer 630 (it can be good heat conductor (such as, dielectric)) can be supported in the temperature gradient between the first and second sides.
As shown in Figure 6, thermoelectric element 610A, 610B can have the haul distance of the height being greater than described thermoelectric element 610A, 610B.Fig. 8 shows the shape of the thermoelectric element according to the embodiment of the present invention.Shape can comprise the vertical stratification having inclination three-dimensional structure 810, triangular structure 820, pyramid structure 830 and have inclined plane 840.As shown in Figure 8, run length R can be greater than height H.Height H can correspond to the distance between heating conductor layer.
In one embodiment, thermoelectric element 610A, 610B can be scheduled.Thermoelectric element 610A, 610B of tilting can have rectangle or cylindrical.In another embodiment, described thermoelectric element 610A, 610B can have cone shape or pyramidal shape.In one embodiment, in each row in thermoelectric element, thermoelectric element 610A can tilt in a direction, and thermoelectric element 610B can tilt in the opposite direction.
The various shapes of thermoelectric element 610A, 610B allow thermoelectric energy gatherer 600 to have half vertical or accurate transversary.Relative to the vertical thermal electric device shown in Fig. 1, these shapes of thermoelectric element 610A, 610B can allow the thickness of thermoelectric energy gatherer 600 to reduce.The shape of thermoelectric element 610A, 610B and the degree of depth can be selected, and to maximize the surface area of described thermoelectric element, and keep the thickness of thermoelectric energy gatherer 600 to fix simultaneously.
Thermoelectric element 610A and 610B can have the upper formation of thermoplastic 640 (such as, polyimides) of lower thermal conductivity.Thermoplastic 640 can be arranged on the surface of described first heating conductor layer 620.Thermoplastic 640 can be provided for the support of thermoelectric element 610A and 610B.The support of thermoelectric element 610A and 610B can be arranged on the inclined surface of thermoplastic 640.Thermoplastic 640 can allow thermoelectric element 610A and 610B to comprise various shape and orientation.The direction of thermoelectric element 610A and 610B and/or shape can be changed for thermoelectric energy gatherer 600 and/or system performance requirements based on free space.The orientation and/or the shape that change thermoelectric element 610A and 610B can reduce vertical space, improve the surface area of thermoelectric element 610A and 610B to greatest extent simultaneously.
Space 670 between thermoelectric element 610A and 610B and the second heat conductor 630 can not filled (such as, being provided with vacuum).In one embodiment, the space 670 between thermoelectric element 610A and 610B and the second heat conductor 630 can be filled with air or gas.In another embodiment, the space 670 between described thermoelectric element 610A and 610B and the second heat conductor 630 can filling dielectric or polyimides.
Thermoelectric element 610A and 610B can be included in the connecting portion 610C during one or both ends of thermoelectric element 610A and 610B, and thermoelectric element 610A and 610B is connected to interconnection 650.Interconnection 650 (they can be copper or gold) can be deposited on the surface of the first and second heat conductors 620,630.In an embodiment (not being shown in Fig. 6), thermoelectric element 610A with 610B can be connected by means of only interconnection 650.
As shown in Figure 6, the first heat carrier 620 can be arranged on the surface of the first substrate 680 (such as, silicon wafer).Second heat carrier 630 can be arranged on the surface of the second substrate 690 (such as, silicon wafer).The wafer level structure of thermoelectric energy gatherer 600 allows it to combine with other integrated circuit component (not being shown in Fig. 6), be formed as the part of thermoelectric energy gatherer 600 or its near.
Fig. 7 illustrates the example arrangement of thermoelectric energy gatherer 700 according to another embodiment of the present invention.Thermoelectric energy gatherer 700 can comprise multiple thermoelectric element 710A, 710B between the first heating conductor layer 720 and the second heating conductor layer 730.Thermoelectric element 710A, 710B can comprise the alternate element (such as, p-type and N-shaped) of dissimilar thermoelectric material.Thermoelectric element 710A, 710B can be electrically connected to each other, make in response to the first side (such as, hot side) and the second side between the temperature gradient of (such as, cold side), each thermoelectric element contributes to the gross energy provided by thermoelectric energy gatherer 700.First heating conductor layer 720 and the second heating conductor layer 730 (it can be good heat conductor (such as, dielectric)) can be supported in the temperature gradient between the first and second sides.
As shown in Figure 7, thermoelectric element 710A, 710B can have the haul distance of the height being greater than described thermoelectric element 710A, 710B.Fig. 8 shows the shape of the thermoelectric element according to the embodiment of the present invention.In one embodiment, thermoelectric element 710A, 710B can be scheduled.Thermoelectric element 710A, 710B of tilting can have rectangle or cylindrical.In another embodiment scheme, thermoelectric element 710A, 710B can have cone shape or pyramidal shape.In one embodiment, in each row in thermoelectric element, thermoelectric element 710A can tilt in a direction, and thermoelectric element 710B can tilt in the opposite direction.
The various shapes of thermoelectric element 710A, 710B allow thermoelectric energy gatherer 700 to have half vertical or accurate transversary.Relative to the vertical thermoelectric element shown in Fig. 1, these shapes of thermoelectric element 710A, 710B can allow the thickness of thermoelectric energy gatherer 700 to reduce.The shape of thermoelectric element 710A, 710B and the degree of depth can be selected to maximize the surface area of described thermoelectric element, keep the thickness of thermoelectric energy gatherer 700 to fix simultaneously.
Thermoelectric element 710A and 710B can be formed in be had on the thermoplastic 740 (such as, polyimides) of lower thermal conductivity.When thermoplastic 740 can be arranged on described first heating conductor layer 720 surperficial.Thermoplastic 740 can be provided for the support of thermoelectric element 710A and 710B.The support of thermoelectric element 710A and 710B can be arranged on thermoplasticity 740 inclined surface.Thermoplasticity 740 can allow thermoelectric element 710A and 710B to comprise various shape and orientation.The direction of thermoelectric element 710A and 710B and/or shape can change based on free space, to be provided for thermoelectric energy gatherer 700 and/or system performance requirements.The orientation and/or the shape that change thermoelectric element 710A and 710B can reduce vertical space, improve the surface area of thermoelectric element 710A and 710B to greatest extent simultaneously.
Space 770 between thermoelectric element 710A and 710B and the second heat conductor 730 can not filled (such as, being provided with vacuum).In one embodiment, the space 770 between thermoelectric element 710A and 710B and the second heat conductor 730 can be filled with air or gas.In another embodiment, the space 770 between thermoelectric element 710A and 710B and the second heat conductor 730 can filling dielectric or polyimides.
Thermoelectric element 710A and 710B can be included in the connecting portion 710C on the one or both ends of thermoelectric element 710A and 710B, and this thermoelectric element 710A and 710B is connected to interconnection 750.Cross tie part 750 (it can be copper or gold) can be deposited on the surface of the first and second heat conductors 720,730.In the embodiment (not being shown in Fig. 7), thermoelectric element 710A with 710B directly can be connected via connecting portion 710C via interconnection 750.
As shown in Figure 7, the first heat carrier 720 can be arranged on the surface of the first substrate 780 (such as, silicon wafer).First substrate 780 can be included in the multiple cavitys 785 in each several part of the substrate 780 under thermoplastic 740, and cavity 785 can improve the thermal impedance between cold junction and hot junction.In one embodiment, cavity 785 can be formed in the part of substrate 780, itself and the standard of becoming a partner to be formed by cross tie part 750 and the second heat carrier 730.Compared with substrate, cavity 785 can also be filled with the dielectric substance of lower thermal conductivity, such as polyimides.
This second heat carrier 730 can be arranged on the surface of the second substrate 790 (such as, silicon wafer).The wafer level structure of thermoelectric energy gatherer 700 allows it to combine with other integrated circuit component (not being shown in Fig. 7), be formed as the part of thermoelectric energy gatherer 700 or its near.
Manufacture thermoelectric energy collector and can comprise laying substrate 780.Cavity in substrate 780 can drill or etch.First heating conductor layer 720 can be deposited on a surface of the substrate.Interconnection 750 can be attached to the surface of the first heating conductor layer 720, and its surface adjacent with substrate 780 is contrary.Dielectric layer can be deposited on the first heating conductor layer 720.Thermoplastic 740 can deposit in multiple layers, and this depends on the height of thermoplastic 740.Thermoelectric element 710A and 710B can be based upon the surface of cross tie part 750 and the surface of thermoplastic 740.Additional interconnection 750 can be deposited on thermoelectric element 710A and 710B, and the second heating conductor layer 730 can higher than interconnection 750 and thermoelectric element 710A and 710B.Second heat carrier layer 730 can be a part for the second substrate 790 be deposited on thermoelectric element 710A and 710B.
Although the present invention is hereinbefore with reference to specific embodiment, the present invention is not limited to above-described embodiment and concrete configuration shown in the accompanying drawings.Such as, it is an embodiment that some assemblies illustrated can be bonded to each other, or an assembly can be divided into several sub-component, or other known or available component any can add.It will be understood by those skilled in the art that the present invention can otherwise implement when not departing from its spirit and substantive distinguishing features of the present invention.Therefore, the present embodiment is all illustrative in all respects, instead of restrictive.Protection scope of the present invention represents by appended claim instead of by description above, and the implication in the equivalency range of therefore claim and institute change and be all intended to be included therein.
Claims (24)
1. a thermoelectricity gatherer, comprising:
At least for being coupled to a pair layer of thermal source;
Multiple thermoelectric element, to arrange in space between said layers and to have the run length being greater than separating distance between layer:
Described thermoelectric element is electrically connected in series to each other with the device type replaced, and
Described thermoelectric element is coupled to the opposite end in described layer.
2. thermoelectricity gatherer according to claim 1, it comprises the thermo-contact layer be arranged on described thermoelectric element further.
3. thermoelectricity gatherer according to claim 1, wherein each thermoelectric element has top and bottom, the top of one of them thermoelectric element is connected to the top of the thermoelectric element that first adjoins, and the bottom of a thermoelectric element is connected to the bottom of the second adjacent thermoelectric element.
4. thermoelectricity gatherer according to claim 3, wherein said thermoelectric element connects via interconnection, and barrier metal is included between each interconnection and thermoelectric element.
5. thermoelectricity gatherer according to claim 1, wherein said thermoelectric element comprises the p-type thermoelectric element and N-shaped thermoelectric element that are connected in series, and between p-type and N-shaped thermoelectric element alternately.
6. thermoelectricity gatherer according to claim 5, wherein said p-type or N-shaped thermoelectric element are superlattice.
7. thermoelectricity gatherer according to claim 5, wherein each p-type thermoelectric element only adjacent n form thermoelectric element.
8. thermoelectricity gatherer according to claim 1, comprises the insulating barrier between that is arranged in described thermoelectric element and described layer further.
9. thermoelectricity gatherer according to claim 8, wherein this dielectric layer is polyimide layer.
10. thermoelectricity gatherer according to claim 8, wherein said thermoelectric element has the thermal conductivity higher than the thermal conductivity of described dielectric layer.
11. thermoelectricity gatherers according to claim 1, it comprises the substrate arranged adjacent to one of the layer outside space between layers further, and described substrate is included in the cavity on the surface of adjacent layer.
12. 1 kinds of thermoelectricity gatherers, comprising:
Substrate;
Be formed in the dielectric layer on substrate;
Multiple thermoelectric element be arranged in dielectric layer, described thermoelectric element has the running length of the separating distance be greater than between described first and second heating conductor layer; With
Wherein, described thermoelectric element is electrically connected in series to replace device type.
13. thermoelectricity gatherers according to claim 12, wherein said thermoelectric element connects via interconnection, and barrier metal is included between each interconnection and thermoelectric element.
14. thermoelectricity gatherers according to claim 12, wherein said thermoelectric element comprises the p-type thermoelectric element and N-shaped thermoelectric element that are connected in series, and between p-type and N-shaped thermoelectric element alternately.
15. require the thermoelectricity gatherer described in 14 according to profit, wherein each p-type thermoelectric element only adjacent n form thermoelectric element.
16. thermoelectricity gatherers according to claim 12, wherein each thermoelectric element has top and bottom, the top of one of them thermoelectric element is connected to the top of the thermoelectric element that first adjoins, and the bottom of a thermoelectric element is connected to the bottom of the second adjacent thermoelectric element.
17. 1 kinds of thermoelectricity gatherers, comprising:
Substrate, is included in the first heating conductor layer on the first surface of described substrate;
Be arranged in the second heating conductor layer above described first heating conductor layer;
Multiple p-type thermoelectric element, be arranged between described first heating conductor layer and described second heating conductor layer, described p-type thermoelectric element has the running length being greater than separating distance between described first and second heating conductor layer;
Multiple N-shaped thermoelectric element, be arranged between described first heating conductor layer and described second heating conductor layer, described N-shaped thermoelectric element has the running length being greater than separating distance between described first and second heating conductor layer; With
Wherein, described p-type thermoelectric element and N-shaped thermoelectric element are connected in series, and between p-type and N-shaped thermoelectric element alternately.
18. thermoelectricity gatherers according to claim 17, are included in the thermoplastic between thermoelectric element and the first heating conductor layer further.
19. thermoelectricity gatherers according to claim 18, wherein thermoelectric element is arranged on the inclined surface of thermoplastic.
20. thermoelectricity gatherers according to claim 17, wherein said substrate is included in the cavity on the described first surface of described substrate.
21. thermoelectricity gatherers according to claim 17, comprise further:
Thermoplastic between described thermoelectric element and described first heating conductor layer; With
Cavity in the first surface of described substrate and under described thermoplastic.
22. thermoelectricity gatherers according to claim 17, wherein each thermoelectric element has top and bottom, the top of one of them thermoelectric element is connected to the top of the thermoelectric element that first adjoins, and the bottom of a thermoelectric element is connected to the bottom of second adjacent heat electric device.
23. thermoelectricity gatherers according to claim 17, it comprises the second substrate on the first surface being arranged on described second heating conductor layer further, and it is relative to the second surface adjacent to thermoelectric element.
24. as the method for claim 17, and the thermoelectricity gatherer described in wherein said thermoelectric element connects via interconnection and barrier metal comprises between each interconnection and thermoelectric element.
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| US14/066,129 | 2013-10-29 | ||
| US14/066,129 US9620698B2 (en) | 2013-01-08 | 2013-10-29 | Wafer scale thermoelectric energy harvester |
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| Publication number | Publication date |
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| DE102014115694A1 (en) | 2015-04-30 |
| DE102014115694B4 (en) | 2022-02-03 |
| CN104576677B (en) | 2018-03-30 |
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