CN104576607A - Through hole filling structure and through hole filling method - Google Patents
Through hole filling structure and through hole filling method Download PDFInfo
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- CN104576607A CN104576607A CN201310524371.5A CN201310524371A CN104576607A CN 104576607 A CN104576607 A CN 104576607A CN 201310524371 A CN201310524371 A CN 201310524371A CN 104576607 A CN104576607 A CN 104576607A
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Abstract
The invention discloses a through hole filling structure. The through hole filling structure comprises a semiconductor substrate, a tungsten layer, a blocking layer and a metal layer, wherein a through hole is formed in the semiconductor substrate; the tungsten layer is positioned on the semiconductor substrate and covers the through hole; the blocking layer is positioned on the tungsten layer and covers the through hole; the metal layer is positioned on the blocking layer and fills the through hole. The invention further provides a through hole filling method. As the tungsten layer has a higher gap filling capacity, when the blocking layer is prepared on the tungsten layer, the thin blocking layer can properly cover the through hole, and the thickness of the blocking layer is uniform; when a metal layer is prepared on the blocking layer again, the through hole can be well filled with the metal layer ; in addition, the conductive capacity of the tungsten layer is better than that of the blocking layer, and the blocking is thinner, so that the structure facilitates the improvement of the conductive capacity of the through hole.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of filling through hole structure and method for filling through hole.
Background technology
Along with people are to the development of the requirement of electronic product to directions such as miniaturized, multi-functional, environment-friendly types, people make great efforts to seek electronic system to do less and less, and integrated level is more and more higher, and function is done more and more.Thereby produce many new technologies, new material and newly design, such as, the technology such as Stacked Die Packaging technology and system in package are exactly the Typical Representative of these technology.The former is called for short 3D encapsulation technology, refers under the prerequisite not changing package body sizes, stacks the encapsulation technology of two or more chip in same packaging body in vertical direction.
In numerous 3D encapsulation technologies, silicon through hole (Through-Silicon Via, being called for short TSV) technology is the focus of now research, TSV technology has following advantage: interconnection length can shorten to equal with chip thickness, adopts the logic module of the logic module substitution level distribution of vertical stacking; Remarkable reduction RC postpones and inductive effect, improves the transmission of digital data transmission speed and microwave; Realize the connection of high density, high-aspect-ratio.
Because the depth-to-width ratio of TSV is comparatively large, metal filling capacity is wherein poor, as shown in Figure 1, is the schematic diagram of filling through hole structure in prior art.In FIG, described semiconductor base 110 has silicon through hole 111, wherein, the material of described semiconductor base 110 is silicon.Described semiconductor base 110 is prepared a barrier layer 120, and described barrier layer 120 covers described silicon through hole 111, and wherein, the material on described barrier layer 120 is tantalum nitride/tantalum.Metal copper layer 130 is prepared on described barrier layer 120, and described metal copper layer 130 fills described silicon through hole 111.Because the depth-to-width ratio of described silicon through hole 111 is larger, so, the filling capacity of described barrier layer 120 in described silicon through hole 111 is poor, it is thicker that described barrier layer 120 deposits in the place of described silicon through hole 111 opening, thinner at described silicon through hole 111 bottom deposit, therefore, the thicker described barrier layer 120 of deposition is needed could to cover described silicon through hole 111 completely.But, when described barrier layer 120 is when the place of described silicon through hole 111 opening deposition is blocked up, affects the filling of described metal copper layer 130 in described silicon through hole 111, in described silicon through hole 111, easily form the cavity of metallic copper.
Summary of the invention
The object of the invention is to, a kind of filling through hole structure and method for filling through hole are provided, the filling capacity of metal in silicon through hole can be improved.
For solving the problems of the technologies described above, the invention provides a kind of filling through hole structure, comprising:
Semiconductor base, has through hole in described semiconductor base;
Tungsten layer, described tungsten layer is positioned on described semiconductor base, and covers described through hole;
Barrier layer, described barrier layer is positioned on described tungsten layer, and covers described through hole;
Inculating crystal layer, described inculating crystal layer is positioned on described barrier layer, and covers described through hole;
Metal level, described metal level is positioned on described inculating crystal layer, and fills described through hole.
Further, in described filling through hole structure, the material of described semiconductor base is silicon, and described through hole is silicon through hole.
Further, in described filling through hole structure, between described semiconductor base and tungsten layer, also there is a cementing layer.
Further, in described filling through hole structure, the material of described cementing layer is titanium nitride.
Further, in described filling through hole structure, between described semiconductor base and cementing layer, also there is a basalis.
Further, in described filling through hole structure, the material of described basalis is one or the combination of silica or silicon nitride.
Further, in described filling through hole structure, the thickness of described tungsten layer is
Further, in described filling through hole structure, the material on described barrier layer is tantalum.
Further, in described filling through hole structure, the thickness on described barrier layer is
Further, in described filling through hole structure, the material of described metal level is copper.
According to another side of the present invention, the present invention also provides a kind of method for filling through hole, comprising:
Semiconductor base is provided, in described semiconductor base, there is through hole;
Described semiconductor base is prepared a tungsten layer, and described tungsten layer covers described through hole;
Described tungsten layer is prepared a barrier layer, and described barrier layer covers described through hole;
Described barrier layer is prepared an inculating crystal layer, and described inculating crystal layer covers described through hole;
Described inculating crystal layer is prepared a metal level, and described metal level fills described through hole.
Further, in described method for filling through hole, described method for filling through hole also comprises: between described semiconductor base and described tungsten layer, prepare a cementing layer.
Further, in described method for filling through hole, the material of described cementing layer is titanium nitride, wherein, with the amino titanium of tetramethyl for predecessor, adopts metallo-organic compound chemical gaseous phase deposition technique to prepare described cementing layer.
Further, in described method for filling through hole, described method for filling through hole also comprises: between described semiconductor base and described cementing layer, prepare a basalis.
Further, in described method for filling through hole, chemical vapor deposition method is adopted to prepare a tungsten layer on described semiconductor base.
Further, in described method for filling through hole, the step that described employing chemical vapor deposition method prepares a tungsten layer on described semiconductor base comprises:
Take silane as reactant, described semiconductor base is prepared a soakage layer;
With silane, diborane and tungsten hexafluoride for reactant, described soakage layer is prepared a nucleating layer;
With tungsten hexafluoride and hydrogen for reactant, described nucleating layer is prepared a tungsten body layer.
Compared with prior art, filling through hole structure provided by the invention has the following advantages: in described filling through hole structure, described semiconductor base has a tungsten layer, described tungsten layer prepares described barrier layer, compared with prior art, because the gap filling ability of described tungsten layer is comparatively strong, so, thinner described tungsten layer can well cover described through hole, and the thickness of described tungsten layer is even; Meanwhile, when described tungsten layer prepares described barrier layer, the below due to described barrier layer is provided with described tungsten layer, so thinner described barrier layer can also well cover described through hole, and the thickness on described barrier layer is even; When preparing metal level on described barrier layer again, described metal level can well be filled in described through hole; In addition, the conductive capability of described tungsten layer is better than the conductive capability on described barrier layer, and described barrier layer is thinner, is conducive to the conductive capability improving through hole.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of filling through hole structure in prior art;
Fig. 2 is the flow chart of method for filling through hole in one embodiment of the invention;
Fig. 3-Fig. 6 is the schematic diagram of through-hole structure in method for filling through hole in one embodiment of the invention;
Fig. 7 is the schematic diagram of filling through hole structure in one embodiment of the invention.
Embodiment
Below in conjunction with schematic diagram, filling through hole structure of the present invention and method for filling through hole are described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, a kind of filling through hole structure is provided, described filling through hole structure comprises semiconductor base, tungsten layer, barrier layer, inculating crystal layer and metal level, and when preparing metal level on described barrier layer again, described metal level can well be filled in described through hole; In addition, described filling through hole structure is conducive to the conductive capability improving through hole.
In conjunction with above-mentioned core concept, method for filling through hole provided by the invention, comprising:
Step S11, provides semiconductor base, has through hole in described semiconductor base;
Step S12, described semiconductor base is prepared a tungsten layer, and described tungsten layer covers described through hole;
Step S13, described tungsten layer is prepared a barrier layer, and described barrier layer covers described through hole;
Step S14, described barrier layer is prepared a metal level, and described metal level fills described through hole.
Below incorporated by reference to Fig. 2 and Fig. 3-Fig. 6, illustrate method for filling through hole of the present invention.Wherein, Fig. 2 is the flow chart of method for filling through hole in one embodiment of the invention; Fig. 3-Fig. 6 is the schematic diagram of through-hole structure in method for filling through hole in one embodiment of the invention.
First, as shown in Figure 2, carry out step S11, semiconductor base 210 is provided, in described semiconductor base 210, there is through hole 211, as shown in Figure 3.In the present embodiment, the material of described semiconductor base 210 is silicon, and described through hole 211 is silicon through hole, wherein, the depth-to-width ratio of silicon through hole is larger, general silicon through hole be deeply wider than 4:1, but the material of described semiconductor base 210 is not limited to as silicon, described through hole 211 is also not limited to silicon through hole, as long as the depth-to-width ratio of described through hole 211 is comparatively large, metal level in subsequent steps is not easily filled, also within thought range of the present invention.
In the present embodiment, between step S11 and step S12, be also included on described semiconductor base 210 and prepare a basalis 240, as shown in Figure 3.Preferably, the material of described basalis 240 is one or the combination of silica or silicon nitride, the rete that can well connect described semiconductor base 210 and fill afterwards.
In the present embodiment, before step S12, be also included on described basalis 240 and prepare a cementing layer 250, as shown in Figure 4.Preferably, the material of described cementing layer 250 is titanium nitride, titanium nitride can well bond described tungsten layer, improve the interstitial rate of described tungsten layer in described through hole 211, but, the material of described cementing layer 250 is not limited to as titanium nitride, as long as can improve the material of the interstitial rate of described tungsten layer in described through hole 211, also within thought range of the present invention.Wherein, in being originally private, with the amino titanium of tetramethyl for predecessor, metallo-organic compound chemical gaseous phase deposition technique is adopted to prepare described cementing layer 250.
Then, carry out step S12, described cementing layer 250 is prepared a tungsten layer 260, described tungsten layer 260 covers described through hole 211, as shown in Figure 5.Preferably, chemical vapor deposition method can be adopted to prepare described tungsten layer 260, the gap filling ability of described tungsten layer 260 can be improved, be conducive to forming the uniform described tungsten layer 260 of thickness.Wherein, the step preparing described tungsten layer 260 comprises:
The first step: with silane (SiH
4) be reactant, prepare a soakage layer;
Second step: with silane (SiH
4), diborane (B
2h
6) and tungsten hexafluoride (WF
6) be reactant, described soakage layer is prepared a nucleating layer, and wherein, the thickness of described nucleating layer is
3rd step: with tungsten hexafluoride (WF
6) and hydrogen (H
2) be reactant, described nucleating layer is prepared a tungsten body layer, finally, the described tungsten layer 260 of formation.Wherein, the thickness of described tungsten layer 260 is
the effect well improving described barrier layer filling capacity can be reached, but, the thickness of described tungsten layer 260 be not limited to into
such as
can be thinner or thicker.
Then, carry out step S13, described tungsten layer 260 is prepared a barrier layer 220, described barrier layer 220 covers described through hole 111, as shown in Figure 6.Owing to having described tungsten layer 260 in the present embodiment, so, the material on described barrier layer 260 can be tantalum, do not need to prepare tantalum nitride again, thus the thickness on described barrier layer 260 can be reduced, be conducive to the filling capacity improving metal level, but the material on described barrier layer 260 is not limited to as tantalum, also can be other metal barrier.Preferably, the thickness on described barrier layer 260 is
such as
good blocking effect can be played.
Finally, carry out step S14, described barrier layer 260 is prepared a metal level 230.In the present embodiment, the material of described metal level 230 is copper.Preferably, first on described barrier layer 260, prepare an inculating crystal layer, then on described inculating crystal layer, prepare described metal level 230.(110) crystal face of tantalum can well be prepared (111) crystal face of copper, thus prepare high-quality described inculating crystal layer on described barrier layer 260, to form the metal level 230 that result in.Described metal level 230 fills described through hole 111, to form described filling through hole structure, as shown in Figure 7.
In the described filling through hole structure of the present embodiment, comprise semiconductor base 210, in described semiconductor base 210, there is described through hole 211.Described semiconductor base 210 has described basalis 240, described basalis 240 has described cementing layer 250.Described tungsten layer 260 is positioned on described cementing layer 250, and covers described through hole 211.Described barrier layer 220 is positioned on described tungsten layer 260, and covers described through hole 211.Described metal level 230 is positioned on described barrier layer 220, and fills described through hole 211.
Compared with prior art, filling through hole structure provided by the invention has the following advantages: in described filling through hole structure, described semiconductor base has a tungsten layer, described tungsten layer prepares described barrier layer, compared with prior art, because the gap filling ability of described tungsten layer is comparatively strong, so, thinner described tungsten layer can well cover described through hole, and the thickness of described tungsten layer is even; Meanwhile, when described tungsten layer prepares described barrier layer, the below due to described barrier layer is provided with described tungsten layer, so thinner described barrier layer can also well cover described through hole, and the thickness on described barrier layer is even; When preparing metal level on described barrier layer again, described metal level can well be filled in described through hole; In addition, the conductive capability of described tungsten layer is better than the conductive capability on described barrier layer, and described barrier layer is thinner, is conducive to the conductive capability improving through hole.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (16)
1. a filling through hole structure, comprising:
Semiconductor base, has through hole in described semiconductor base;
Tungsten layer, described tungsten layer is positioned on described semiconductor base, and covers described through hole;
Barrier layer, described barrier layer is positioned on described tungsten layer, and covers described through hole;
Metal level, described metal level is positioned on described barrier layer, and fills described through hole.
2. filling through hole structure as claimed in claim 1, it is characterized in that, the material of described semiconductor base is silicon, and described through hole is silicon through hole.
3. filling through hole structure as claimed in claim 2, is characterized in that, between described semiconductor base and tungsten layer, also having a cementing layer.
4. filling through hole structure as claimed in claim 3, it is characterized in that, the material of described cementing layer is titanium nitride.
5. filling through hole structure as claimed in claim 3, is characterized in that, between described semiconductor base and cementing layer, also having a basalis.
6. filling through hole structure as claimed in claim 5, it is characterized in that, the material of described basalis is one or the combination of silica or silicon nitride.
7. filling through hole structure as claimed in claim 1, it is characterized in that, the thickness of described tungsten layer is
8. filling through hole structure as claimed in claim 1, it is characterized in that, the material on described barrier layer is tantalum.
9. filling through hole structure as claimed in claim 1, it is characterized in that, the thickness on described barrier layer is
10. filling through hole structure as claimed in claim 1, it is characterized in that, the material of described metal level is copper, between described barrier layer and metal level, also has an inculating crystal layer.
11. 1 kinds of method for filling through hole, comprising:
Semiconductor base is provided, in described semiconductor base, there is through hole;
Described semiconductor base is prepared a tungsten layer, and described tungsten layer covers described through hole;
Described tungsten layer is prepared a barrier layer, and described barrier layer covers described through hole;
Described barrier layer is prepared a metal level, and described metal level fills described through hole.
12. method for filling through hole as claimed in claim 11, it is characterized in that, described method for filling through hole also comprises: between described semiconductor base and described tungsten layer, prepare a cementing layer.
13. method for filling through hole as claimed in claim 12, is characterized in that, the material of described cementing layer is titanium nitride, wherein, with the amino titanium of tetramethyl for predecessor, adopt metallo-organic compound chemical gaseous phase deposition technique to prepare described cementing layer.
14. method for filling through hole as claimed in claim 12, it is characterized in that, described method for filling through hole also comprises: between described semiconductor base and described cementing layer, prepare a basalis.
15. method for filling through hole as claimed in claim 11, is characterized in that, adopt chemical vapor deposition method to prepare a tungsten layer on described semiconductor base.
16. method for filling through hole as claimed in claim 15, it is characterized in that, the step that described employing chemical vapor deposition method prepares a tungsten layer on described semiconductor base comprises:
Take silane as reactant, described semiconductor base is prepared a soakage layer;
With silane, diborane and tungsten hexafluoride for reactant, described soakage layer is prepared a nucleating layer;
With tungsten hexafluoride and hydrogen for reactant, described nucleating layer is prepared a tungsten body layer.
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| US5599739A (en) * | 1994-12-30 | 1997-02-04 | Lucent Technologies Inc. | Barrier layer treatments for tungsten plug |
| US20040053491A1 (en) * | 2002-09-18 | 2004-03-18 | Park Hong-Mi | Method of forming a contact in a semiconductor device |
| CN1741264A (en) * | 2004-08-26 | 2006-03-01 | 尔必达存储器株式会社 | Method of manufacturing semiconductor device |
| US20070152342A1 (en) * | 2005-12-30 | 2007-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Via structure and process for forming the same |
| CN102437142A (en) * | 2011-08-17 | 2012-05-02 | 上海华力微电子有限公司 | Metal interconnection structure for reducing through hole resistance and forming method thereof |
-
2013
- 2013-10-29 CN CN201310524371.5A patent/CN104576607A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5599739A (en) * | 1994-12-30 | 1997-02-04 | Lucent Technologies Inc. | Barrier layer treatments for tungsten plug |
| US20040053491A1 (en) * | 2002-09-18 | 2004-03-18 | Park Hong-Mi | Method of forming a contact in a semiconductor device |
| CN1741264A (en) * | 2004-08-26 | 2006-03-01 | 尔必达存储器株式会社 | Method of manufacturing semiconductor device |
| US20070152342A1 (en) * | 2005-12-30 | 2007-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Via structure and process for forming the same |
| CN102437142A (en) * | 2011-08-17 | 2012-05-02 | 上海华力微电子有限公司 | Metal interconnection structure for reducing through hole resistance and forming method thereof |
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