CN104575399A - Light-emitting diode pixel circuit and light-emitting diode display - Google Patents

Light-emitting diode pixel circuit and light-emitting diode display Download PDF

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Publication number
CN104575399A
CN104575399A CN201510081149.1A CN201510081149A CN104575399A CN 104575399 A CN104575399 A CN 104575399A CN 201510081149 A CN201510081149 A CN 201510081149A CN 104575399 A CN104575399 A CN 104575399A
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China
Prior art keywords
emitting diode
light emitting
electrode
pixel circuit
transistor
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CN201510081149.1A
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Chinese (zh)
Inventor
张启增
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Vtron Technologies Ltd
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Vtron Technologies Ltd
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Priority to CN201510081149.1A priority Critical patent/CN104575399A/en
Publication of CN104575399A publication Critical patent/CN104575399A/en
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Abstract

The embodiment of the invention discloses a light-emitting diode pixel circuit and a light-emitting diode display, solving the technical problem of non-uniformity of the display brightness of each pixel circuit of the existing light-emitting diode display. The light-emitting diode pixel circuit is arranged in the light-emitting diode display, and the light-emitting diode display comprises a plurality of scanning lines and a plurality of data lines. The light-emitting diode pixel circuit comprises a first transistor, a second transistor, a voltage-controlled pulse wave modulation module, a light-emitting diode and a constant-current device, wherein the first transistor comprises a gate electrode, a first electrode and a second electrode, wherein the gate electrode is coupled with one scanning line of the plurality of data lines, and the first electrode is coupled with one data line; the second transistor comprises a gate electrode, a first electrode and a second electrode; the voltage-controlled pulse wave modulation module is coupled with the second electrode of the first transistor and the gate electrode of the second transistor; the light-emitting diode is coupled with the first electrode of the second transistor; and the constant-current device is coupled with the second electrode of the second transistor and used for driving the light-emitting diode.

Description

Light emitting diode pixel circuit and light emitting diode indicator
Technical field
The present invention relates to hardware circuit technical field, particularly relate to a kind of light emitting diode pixel circuit and light emitting diode indicator.
Background technology
Along with the progress of science and technology, develop display product miscellaneous on the market, as liquid crystal display (Liquid Crystal Display, LCD), plasma display panel (Plasma Display Panel, and light emitting diode indicator (Light Emitting Diode display, LED display) etc. PDP).Wherein, light emitting diode indicator has that luminescence efficiency is high, the life-span is long and the advantage such as low power consuming, has been widely used in outdoor display board and large-scale outdoor signboard, has also been present in the display of domestic TV or computing machine.
In known technology, the problem of light emitting diode indicator ubiquity brightness disproportionation.Specifically, please refer to Fig. 1, is the schematic diagram of a known light emitting diode pixel circuit 100.Light emitting diode pixel circuit 100 is coupled to a scan line SL1 and data line DL1, it comprises a first transistor Q1, a transistor seconds Q2, a storage capacitors C and a light emitting diode D1, when the selected and the first transistor Q1 conducting of sweep trace SL1, transistor seconds Q2 drives an electric current I D1 according to a data line voltage Vdata1, electric current I D1 flows through light emitting diode D1 and is relevant to the brightness of light emitting diode D1, makes light emitting diode pixel circuit 100 can show different GTG (Gray Level) effect according to data line voltage Vdata.But electric current I D1 is easily subject to the impact of one of light emitting diode D1 forward voltage Vf and changes, and makes light emitting diode pixel circuit 100 show different brightness, causes the problem of brightness disproportionation.Specifically, as brightness and the schematic diagram of current relationship flowing through light emitting diode D1 of Fig. 2 light emitting diode D1, and as Fig. 3 be the electric current I D1 of light emitting diode D1 and the schematic diagram of forward voltage Vf relation.As shown in Figure 2, the brightness that light emitting diode D1 produces presents a linear relationship with the electric current flowing through light emitting diode D1.But, as shown in Figure 3, the electric current I D1 and the forward voltage Vf that flow through light emitting diode D1 present nonlinear relationship, therefore when light emitting diode D1 conducting, as long as forward voltage Vf produces skew a little, the variation that the electric current I D1 that flows through light emitting diode D1 is violent can be caused.Wherein, forward voltage Vf is vulnerable to the impact of line impedance in light emitting diode indicator, and causes the brightness of light emitting diode D1 to change thereupon, makes light emitting diode indicator present the phenomenon of brightness irregularities.
In addition, limit voltage (Threshold Voltage) meeting drift because of processing procedure factor of transistor seconds Q2, and then affect electric current I D1, in other words, even if the data line DL1 different pixel circuit of identical voltage driven, different pixel circuit also can produce different electric currents and export because the limit voltage of transistor seconds Q2 is inconsistent, the light emitting diode D1 in each pixel circuit is made cannot correctly to show GTG effect, produce the phenomenon of brightness irregularities, have a strong impact on the display quality of whole picture.
Therefore, how to make in light emitting diode indicator each pixel circuit display uniform luminance and correctly show GTG effect, just becoming one of target that industry makes great efforts.
Summary of the invention
Embodiments provide a kind of light emitting diode pixel circuit and light emitting diode indicator, solve the technical matters that each pixel circuit display brightness in current light emitting diode indicator is uneven.
A kind of light emitting diode pixel circuit that the embodiment of the present invention provides, comprising:
Be arranged in a light emitting diode indicator, this light emitting diode indicator comprises multiple sweep trace and multiple data line, and this light emitting diode pixel circuit comprises:
One the first transistor, comprises the scan line that a gate is coupled to the plurality of data line, and one first electrode is coupled to a data line, and one second electrode;
One transistor seconds, comprises a gate, one first electrode, and one second electrode;
One voltage-controlled pulse wave modulating module, is coupled to this second electrode of this first transistor and this gate of this transistor seconds;
One light emitting diode, is coupled to this first electrode of this transistor seconds;
And certain current device, is coupled to this second electrode of this transistor seconds, is used for driving this light emitting diode.
Alternatively, during this transistor seconds conducting, this is determined current device and produces a fixed current, and this light emitting diode produces a constant brightness.
Alternatively, this voltage-controlled pulse wave modulating module produces a pulse wave signal according to one of this data line data voltage, and this pulse wave signal is exported to this gate of this transistor seconds, for controlling the conducting state of this transistor seconds, adjust the GTG effect of this light emitting diode pixel circuit.
Alternatively, described light emitting diode pixel circuit also comprises:
One storage capacitors, is coupled to this second electrode of this first transistor.
A kind of light emitting diode indicator that the embodiment of the present invention provides, comprising:
Multiple sweep trace;
Multiple data line, perpendicular to the plurality of sweep trace;
And multiple light emitting diode pixel circuit, each light emitting diode pixel circuit is coupled to the scan line of the plurality of sweep trace and a data line of the plurality of data line, and this each light emitting diode pixel circuit comprises:
One the first transistor, comprises a gate and is connected to this sweep trace, and one first Electrode connection is in this data line, and one second electrode;
One transistor seconds, comprises a gate, one first electrode and one second electrode;
One voltage-controlled pulse wave modulating module, is coupled to this second electrode of this first transistor and this gate of this transistor seconds;
One light emitting diode, is coupled to this first electrode of this transistor seconds;
And certain current device, be coupled to this second electrode of this transistor seconds, be used for driving this light emitting diode.
Alternatively, during this transistor seconds conducting, this is determined current device and produces a fixed current, and this light emitting diode produces a constant brightness.
Alternatively, this voltage-controlled pulse wave modulating module produces a pulse wave signal according to a data voltage of this data line, and this pulse wave signal is exported to this gate of this transistor seconds, to control the conducting state of this transistor seconds, adjust the GTG effect of this each light emitting diode pixel circuit.
Alternatively, described light emitting diode indicator also comprises:
One storage capacitors, is coupled to this second electrode of this first transistor.
As can be seen from the above technical solutions, the embodiment of the present invention has the following advantages:
Embodiments provide a kind of light emitting diode pixel circuit and light emitting diode indicator, wherein, light emitting diode pixel circuit comprises: be arranged in a light emitting diode indicator, light emitting diode indicator comprises multiple sweep trace and multiple data line, light emitting diode pixel circuit comprises: a first transistor, comprise the scan line that a gate is coupled to multiple data line, one first electrode is coupled to a data line, and one second electrode; One transistor seconds, comprises a gate, one first electrode, and one second electrode; One voltage-controlled pulse wave modulating module, is coupled to the second electrode of the first transistor and the gate of transistor seconds; One light emitting diode, is coupled to the first electrode of transistor seconds; And certain current device, is coupled to the second electrode of transistor seconds, be used for driving light emitting diode.In the present embodiment, fixed current is produced to drive light emitting diode by determining current device, make diode displaying uniform luminance, recycle voltage-controlled pulse wave modulating module and data line voltage is converted to the pulse wave signal with different empty accountings, to adjust the GTG effect of light emitting diode pixel circuit, make light emitting diode indicator can show even brightness and correctly show GTG effect, solving the technical matters that each pixel circuit display brightness in current light emitting diode indicator is uneven.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram of existing light emitting diode pixel circuit;
Fig. 2 is the brightness of light emitting diode and the schematic diagram of current relationship;
Fig. 3 is the electric current of light emitting diode and the schematic diagram of forward voltage relation;
The structural representation of the light emitting diode indicator that Fig. 4 A provides for the embodiment of the present invention;
Fig. 4 B is the structural representation of the light emitting diode pixel circuit in Fig. 4 A;
Fig. 5 is the schematic diagram of one of embodiment of the present invention light emitting diode pixel circuit;
Illustrate: 100,400,500, light emitting diode pixel circuit; T1, T2, Q1, Q2, transistor; D, D1, light emitting diode; VCP, voltage-controlled pulse wave modulating module; CC, determine current device; SL, SL1, sweep trace; DL, DL1, data line; Vdata, data line voltage; V dD, positive voltage; Vf, forward voltage; CS, C, storage capacitors; ID1, ID4, ID5, electric current.
Embodiment
Embodiments provide a kind of light emitting diode pixel circuit and light emitting diode indicator, solve the technical matters that each pixel circuit display brightness in current light emitting diode indicator is uneven.
For making goal of the invention of the present invention, feature, advantage can be more obvious and understandable, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, the embodiments described below are only the present invention's part embodiments, and the embodiment of not all.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
Refer to Fig. 4 A and Fig. 4 B, an embodiment of a kind of light emitting diode pixel circuit provided in the embodiment of the present invention comprises:
As shown in Figure 4 A, light emitting diode indicator 40 is provided with multiple light emitting diode pixel circuit 400, multiple data line DL and the multiple sweep trace SL perpendicular to data line DL, the confluce of data line DL and sweep trace SL is all connected with a light emitting diode pixel circuit 400.For ease of explanation, a light emitting diode pixel circuit 400 is only shown in Fig. 4 A, light emitting diode indicator 40 is provided with multiple light emitting diode pixel circuit 400, multiple data line DL and the multiple sweep trace SL perpendicular to data line DL, the confluce of data line DL and sweep trace SL is all connected with a light emitting diode pixel circuit 400.For ease of explanation, a light emitting diode pixel circuit 400 is only shown in 4A figure, in fact, in light emitting diode indicator 40, each data line DL and the confluce of sweep trace SL are equipped with a light emitting diode pixel circuit 400 and are coupled to corresponding data line DL and sweep trace SL, and namely light emitting diode pixel circuit 400 is be distributed on light emitting diode indicator 40 with the pattern of matrix (Matrix).Light emitting diode pixel circuit 400 includes a first transistor T1, a transistor seconds T2, a storage capacitors C s, a voltage-controlled pulse wave modulating module VCP, a light emitting diode D and certain current device CC.One of the first transistor T1 gate is coupled to sweep trace SL, and an electrode of the first transistor T1 is coupled to data line DL, and another electrode of the first transistor T1 is coupled to voltage-controlled pulse wave modulating module VCP and storage capacitors C s, voltage-controlled pulse wave modulating module VCP is coupled to a gate of transistor seconds T2.Determine a drain and a positive voltage V that current device CC is coupled to transistor seconds T2 dDbetween, light emitting diode D is coupled between the one source pole of transistor seconds T2 and an earth terminal.Determining current device CC is a constant current source (ConstantCurrent Source), and it can produce a fixed current ID4 to drive light emitting diode D, and when transistor seconds T2 conducting, light emitting diode D produces a fixing brightness LI.
Specifically, when sweep trace SL is selected, one data line voltage Vdata is also passed to voltage-controlled pulse wave modulating module VCP by the first transistor T1 conducting, voltage-controlled pulse wave modulating module VCP is a Control of Voltage pulse wave width modulation device (Voltage-Controlled Pulse Width Modulator), input signal can be converted to the pulse wave signal of different empty accounting (Duty Ratio) by Control of Voltage pulse wave width modulation device, it should be noted that, the technology that aforesaid Control of Voltage pulse wave width modulation device is known to the skilled person, its details of operation does not repeat at this.Specifically, voltage-controlled pulse wave modulating module VCP produces the pulse wave signal corresponding to voltage Vdata according to voltage Vdata, and pulse wave signal is passed to the gate of transistor seconds T2, control the conducting state of transistor seconds T2 whereby, to adjust the GTG effect of light emitting diode pixel circuit 400.Specifically, voltage Vdata is relevant to an input voltage vin of voltage-controlled pulse wave modulating module VCP, supposes that the minimum value of input voltage vin is 0V and maximal value is V m, when an input voltage of voltage-controlled pulse wave modulating module VCP is 0.1V mtime, voltage-controlled pulse wave modulating module VCP exports has the pulse wave signal that sky accounting is 10%, when the input voltage of voltage-controlled pulse wave modulating module VCP is 0.9V mtime, voltage-controlled pulse wave modulating module VCP exports the pulse wave signal that empty accounting is 90%, and by that analogy, voltage-controlled pulse wave modulating module VCP can produce the pulse wave signal of the empty accounting had corresponding to voltage Vdata according to voltage Vdata.
After pulse wave signal exports the gate of transistor seconds T2 to, pulse wave signal can control the conducting state of transistor seconds T2.Be the pulse wave signal of 20% for empty accounting, when the pulse wave signal that empty accounting is 20% is passed to the gate of transistor seconds T2, in a Pulse period, the Pulse period transistor seconds T2 only having 20% is conducting, all the other Pulse period transistor seconds T2 of 80% close, in other words, only have the Pulse period light emitting diode D of 20% to be bright (i.e. light emitting diode D conducting and produce fixing brightness LI), all the other Pulse periods of 80% are dark (namely light emitting diode D end).Be understandable that, when Pulse period is less than a specific period (pulse wave frequency is greater than a characteristic frequency), human eye cannot discover light emitting diode D in bright dark between conversion, the brightness that now human eye is perceived is approximately 20% of brightness LI.In like manner, when the pulse wave signal that empty accounting is 80% is passed to the gate of transistor seconds T2, the brightness that human eye is perceived is approximately 80% of brightness LI.In other words, the GTG effect of light emitting diode pixel circuit 400 can be depending on the empty accounting of the pulse wave signal exported in voltage-controlled pulse wave modulating module VCP, thus, light emitting diode pixel circuit 400 can according to the voltage Vdata of data line DL, voltage-controlled pulse wave modulating module VCP is utilized to produce the pulse wave signal of the empty accounting had corresponding to voltage Vdata, control the conducting state of transistor seconds T2 and light emitting diode D, to adjust the GTG effect of light emitting diode pixel circuit 400.
Light emitting diode pixel circuit 100 as shown in Figure 1, light emitting diode pixel circuit 100 controls transistor seconds Q2 according to data line voltage Vdata1, transistor seconds Q2 drives the electric current I D1 flowing through light emitting diode D1, to show different GTG effect, but, light emitting diode D1 is easily because of the factor of line impedance or processing procedure, the electric current I D1 flowing through light emitting diode D1 is caused to produce variation, and make light emitting diode D1 show different brightness, cause light emitting diode indicator to show uneven brightness.In comparison, the present invention utilizes and determines current device generation fixed current to drive light emitting diode, make diode displaying uniform luminance, recycle voltage-controlled pulse wave modulating module and data line voltage is converted to the pulse wave signal with different empty accountings, to adjust the GTG effect of light emitting diode pixel circuit, make light emitting diode indicator can show uniform brightness and correctly show GTG effect.
It is noted that previous embodiment system is for illustration of concept of the present invention, those skilled in the art can do the modification of difference according to this, and are not limited thereto.For example, please refer to the 5th figure, the 5th figure is the schematic diagram of the embodiment of the present invention one light emitting diode pixel circuit 500.Light emitting diode pixel circuit 500 and light emitting diode pixel circuit 400 similar, therefore same components continues to use same-sign.With light emitting diode pixel circuit 400 unlike, light emitting diode D is coupled to drain and the positive voltage V of transistor seconds T2 dDbetween, determine between source electrode that current device CC is coupled to transistor seconds T2 and earth terminal, determining current device CC is that certain electric current draws (Constant Current Sink), a fixed current ID5 can be drawn, to drive light emitting diode D, light emitting diode D is made to produce constant brightness, also requirement according to the invention.
In sum, the light emitting diode pixel circuit of the present invention utilizes determines current device generation fixed current to drive light emitting diode, make diode displaying uniform luminance, recycle voltage-controlled pulse wave modulating module and data line voltage is converted to the pulse wave signal with different empty accountings, to adjust the GTG effect of light emitting diode pixel circuit, make light emitting diode indicator can show even brightness and correctly show GTG effect.
Should be noted that, a kind of light emitting diode indicator as shown in Figure 4 A is also included further in the embodiment of the present invention, its inside is provided with light emitting diode pixel circuit as shown in Figure 4 B, and further light emitting diode indicator can be provided with the light emitting diode pixel circuit expanded based on Fig. 4 B as shown in Figure 5.
The foregoing is only the preferred embodiment of the present invention, all equalizations done according to the present patent application the scope of the claims change and modify, and all should belong to the covering scope of the present invention.
In the present embodiment, fixed current is produced to drive light emitting diode by determining current device, make diode displaying uniform luminance, recycle voltage-controlled pulse wave modulating module and data line voltage is converted to the pulse wave signal with different empty accountings, to adjust the GTG effect of light emitting diode pixel circuit, make light emitting diode indicator can show even brightness and correctly show GTG effect, solving the technical matters that each pixel circuit display brightness in current light emitting diode indicator is uneven.
The above, above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.

Claims (8)

1. a light emitting diode pixel circuit, is characterized in that, comprising:
Be arranged in a light emitting diode indicator, this light emitting diode indicator comprises multiple sweep trace and multiple data line, and this light emitting diode pixel circuit comprises:
One the first transistor, comprises the scan line that a gate is coupled to the plurality of data line, and one first electrode is coupled to a data line, and one second electrode;
One transistor seconds, comprises a gate, one first electrode, and one second electrode;
One voltage-controlled pulse wave modulating module, is coupled to this second electrode of this first transistor and this gate of this transistor seconds;
One light emitting diode, is coupled to this first electrode of this transistor seconds;
And certain current device, is coupled to this second electrode of this transistor seconds, is used for driving this light emitting diode.
2. light emitting diode pixel circuit as claimed in claim 1, it is characterized in that, during this transistor seconds conducting, this is determined current device and produces a fixed current, and this light emitting diode produces a constant brightness.
3. light emitting diode pixel circuit as claimed in claim 1, it is characterized in that, this voltage-controlled pulse wave modulating module produces a pulse wave signal according to one of this data line data voltage, and this pulse wave signal is exported to this gate of this transistor seconds, for controlling the conducting state of this transistor seconds, adjust the GTG effect of this light emitting diode pixel circuit.
4. light emitting diode pixel circuit as claimed in claim 1, it is characterized in that, described light emitting diode pixel circuit also comprises:
One storage capacitors, is coupled to this second electrode of this first transistor.
5. a light emitting diode indicator, is characterized in that, comprising:
Multiple sweep trace;
Multiple data line, perpendicular to the plurality of sweep trace;
And multiple light emitting diode pixel circuit, each light emitting diode pixel circuit is coupled to the scan line of the plurality of sweep trace and a data line of the plurality of data line, and this each light emitting diode pixel circuit comprises:
One the first transistor, comprises a gate and is connected to this sweep trace, and one first Electrode connection is in this data line, and one second electrode;
One transistor seconds, comprises a gate, one first electrode and one second electrode;
One voltage-controlled pulse wave modulating module, is coupled to this second electrode of this first transistor and this gate of this transistor seconds;
One light emitting diode, is coupled to this first electrode of this transistor seconds;
And certain current device, be coupled to this second electrode of this transistor seconds, be used for driving this light emitting diode.
6. light emitting diode indicator according to claim 5, is characterized in that, during this transistor seconds conducting, this is determined current device and produces a fixed current, and this light emitting diode produces a constant brightness.
7. light emitting diode indicator according to claim 5, it is characterized in that, this voltage-controlled pulse wave modulating module produces a pulse wave signal according to a data voltage of this data line, and this pulse wave signal is exported to this gate of this transistor seconds, to control the conducting state of this transistor seconds, adjust the GTG effect of this each light emitting diode pixel circuit.
8. light emitting diode indicator according to claim 5, is characterized in that, described light emitting diode indicator also comprises:
One storage capacitors, is coupled to this second electrode of this first transistor.
CN201510081149.1A 2015-02-13 2015-02-13 Light-emitting diode pixel circuit and light-emitting diode display Pending CN104575399A (en)

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Application Number Priority Date Filing Date Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113129845A (en) * 2021-04-12 2021-07-16 Tcl华星光电技术有限公司 Backlight driving method and display panel

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Publication number Priority date Publication date Assignee Title
CN1397058A (en) * 2000-09-28 2003-02-12 精工爱普生株式会社 Display device, method of driving display device, electronic apparatus
CN1517964A (en) * 2003-01-20 2004-08-04 ������������ʽ���� Active matrix drive type display device
US20050156828A1 (en) * 2001-12-14 2005-07-21 Atsuhiro Yamashita Display device of digital drive type
CN101261810A (en) * 2008-04-21 2008-09-10 上海大学 A pixel driving circuit in silicon base organic luminescent display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1397058A (en) * 2000-09-28 2003-02-12 精工爱普生株式会社 Display device, method of driving display device, electronic apparatus
US20050156828A1 (en) * 2001-12-14 2005-07-21 Atsuhiro Yamashita Display device of digital drive type
CN1517964A (en) * 2003-01-20 2004-08-04 ������������ʽ���� Active matrix drive type display device
CN101261810A (en) * 2008-04-21 2008-09-10 上海大学 A pixel driving circuit in silicon base organic luminescent display device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113129845A (en) * 2021-04-12 2021-07-16 Tcl华星光电技术有限公司 Backlight driving method and display panel

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