CN104561932B - Gas-phase deposition system and vapor deposition method - Google Patents
Gas-phase deposition system and vapor deposition method Download PDFInfo
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- CN104561932B CN104561932B CN201510043633.5A CN201510043633A CN104561932B CN 104561932 B CN104561932 B CN 104561932B CN 201510043633 A CN201510043633 A CN 201510043633A CN 104561932 B CN104561932 B CN 104561932B
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- air outlet
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- 230000008021 deposition Effects 0.000 title claims abstract description 38
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000000151 deposition Methods 0.000 title abstract description 30
- 238000007740 vapor deposition Methods 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000007921 spray Substances 0.000 claims abstract description 57
- 238000001816 cooling Methods 0.000 claims abstract description 36
- 238000004891 communication Methods 0.000 claims description 4
- 238000007664 blowing Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of gas-phase deposition system and vapor deposition methods.Gas-phase deposition system includes: accommodating chamber；The indoor base station for bearing substrate of receiving is set, and the base station separates accommodating chamber to form sealable reaction chamber；The indoor spray equipment being oppositely arranged with base station of the reaction is set, wherein the spray equipment is used to spray the process gas of vapor deposition；Air cooling equipment in the accommodating chamber and outside the reaction chamber is set comprising it is multiple go out cold wind air outlet and the air output of each air outlet can be controlled separately；The cold wind of the air outlet of the air cooling equipment can blow to the base station.Use the vapor deposition method of above-mentioned gas-phase deposition system.Gas-phase deposition system and vapor deposition method of the invention, the air output of each air outlet can be controlled separately, so that each region temperature of substrate is relatively uniform, so that the film thickness that vapor deposition is formed is more uniform.
Description
Technical field
The present invention relates to display panel manufacturing field more particularly to a kind of gas-phase deposition systems and vapor deposition method.
Background technique
In the manufacturing process of Thin Film Transistor-LCD, chemical vapor deposition is that film crystal is formed on substrate
One of important procedure of pipe.Chemical gas-phase deposition system is to generate process gas using high frequency voltage under vacuum environment
Plasma, which eventually forms solid-state semiconductor and is deposited on substrate, forms film.Temperature be influence film thickness principal element it
One, effect is preferable for transporting after depositing thin film at high temperature, film layer stacking it is finer and close, thickness is small.
Existing chemical gas-phase deposition system, as shown in Figure 1, including reaction chamber 10, for placing 20 He of base station of substrate
Honeycomb nozzle 30 on base station.When being vapor-deposited, first substrate 40 is placed on base station 20, later, work
Skill gas sprays to the upper surface of substrate from honeycomb nozzle 30, forms film in the upper surface of substrate.Due to the not same district of substrate
Domain temperature is not exactly the same, and the film thickness for the area deposition for causing substrate temperature high is thin, the low area deposition of substrate temperature
Film thickness is thick, leads to the in uneven thickness of the film of substrate, as shown in Fig. 2, the thickness of the film in four regions is 40 respectively
Nanometer (being indicated with nm), 41 nanometers, 42 nanometers and 43 nanometers, leading to Thin Film Transistor-LCD, bad rate is higher.
Summary of the invention
The present invention provides a kind of gas-phase deposition system, solves the film thickness for the formation that is vapor-deposited in the prior art not
Uniform technical problem.
The present invention provides following technical schemes:
A kind of gas-phase deposition system, comprising:
Accommodating chamber；
Be arranged in it is described accommodate the indoor base station for bearing substrate, accommodating chamber is separated that be formed can be closed by the base station
Reaction chamber；
The indoor spray equipment being oppositely arranged with base station of the reaction is set, wherein the spray equipment is for spraying
Drench the process gas of vapor deposition；
Air cooling equipment in the accommodating chamber and outside the reaction chamber is set comprising it is multiple go out cold wind air outlet
And the air output of each air outlet can be controlled separately；The cold wind of the air outlet of the air cooling equipment can blow to the base station.
Preferably, further include with the one-to-one mass flow controller of air outlet, each air outlet by with its
The air output of corresponding mass flow controller control air outlet.
Preferably, the multiple air outlet is uniformly arranged.
Preferably, the air cooling equipment include cold wind main pipeline and from main pipeline stretch out multiple cold wind branch pipe(tube)s, it is described
The other end of cold wind branch pipe(tube) is the air outlet.
Preferably, the horizontally disposed substrate level for carrying it of the base station is placed, and the spray equipment is set to described
The top of base station, the multiple air outlet are set to the lower section of the base station.
Preferably, the multiple air outlet is in contact with the base station.
Preferably, the spray equipment includes honeycomb nozzle and nozzle towards base station.
The present invention also provides following technical schemes:
A kind of method of vapor deposition, includes the following steps:
Base station bearing substrate；
Spray equipment to substrate spray process gas, each air outlet of air cooling equipment according to respective default air output to
Substrate is blown a cold wind over；
Reach the preset time, stops stopping blowing a cold wind over to substrate to substrate spray process gas；
Wherein, the respective default air output of each air outlet of air cooling equipment is according to the respective air output of each air outlet
Tune-up data and substrate on corresponding relationship between the uniformity of film that deposits, reaching for obtaining be each when the default uniformity
The respective air output of air outlet.
Preferably, the gas-phase deposition system further includes control unit, and described control unit and the mass flow control
Device and spray equipment communication connection, for controlling each mass flow controller and spray equipment；
The spray equipment is to substrate spray process gas, and each air outlet of air cooling equipment is according to respective default outlet air
It measures to blow a cold wind over to substrate and specifically comprise the following steps:
Described control unit controls spray equipment to substrate spray process gas, and described control unit controls each quality stream
Amount controller is blown a cold wind over controlling each air outlet according to respective default air output to substrate.
Gas-phase deposition system of the invention, the base station being arranged in the accommodation room separate accommodating chamber to form sealable reaction
Room, spray equipment are arranged in reaction chamber, in this way, the process gas of spray vapor deposition is carried out in closed reaction chamber
, and air cooling equipment is arranged outside the reaction chamber, air cooling equipment does not influence the spray of process gas；Air cooling equipment it is every
The air output of a air outlet can be controlled separately, and the cold wind of air outlet can blow to the base station of the bearing substrate, realize base station
The zonal control of temperature, in vapor deposition processes, substrate is located on base station, and then realizes the subregion of substrate temperature
Control, so that each region temperature of substrate is relatively uniform, so that the film thickness that vapor deposition is formed is more uniform.
Detailed description of the invention
Fig. 1 is the schematic diagram that the gas-phase deposition system of substrate is placed on existing base station；
Fig. 2 is the film schematic diagram that gas-phase deposition system shown in FIG. 1 is formed on substrate；
Fig. 3 is the schematic diagram of the gas-phase deposition system for being placed with substrate of the invention；
Fig. 4 is the schematic diagram of the air cooling equipment of gas-phase deposition system shown in Fig. 3；
Fig. 5 forms on substrate for gas-phase deposition system shown in Fig. 3 when being cooled down without using air cooling equipment thin
Film schematic diagram；
Fig. 6 is the schematic diagram of the air outlet of gas-phase deposition system shown in Fig. 3 and the relative position of base station；
Fig. 7 is the film that gas-phase deposition system shown in Fig. 3 is formed on substrate when being cooled down using air cooling equipment
Schematic diagram.
Appended drawing reference:
In background technique:
10 reaction chambers, 20 base stations, 30 honeycomb nozzles, substrate 40；
In the present invention:
100 accommodating chambers, 110 reaction chambers, 200 base stations, 300 spray equipments,
400 air cooling equipments, 410 air outlets, 420 mass flow controllers,
430 cold wind main pipelines, 431 cold wind branch pipe(tube)s,
500 substrates.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
A kind of gas-phase deposition system provided in an embodiment of the present invention, as shown in Figure 3 and Figure 4, comprising:
Accommodating chamber 100；
The base station 200 for bearing substrate in the accommodating chamber 100 is set, and the base station 200 separates accommodating chamber
Form sealable reaction chamber 110；
The indoor spray equipment 300 being oppositely arranged with base station of the reaction is set, wherein the spray equipment 300
For spraying the process gas of vapor deposition；
Air cooling equipment 400 in the accommodating chamber and outside the reaction chamber is set comprising it is multiple go out cold wind go out
The air output of air port 410 and each air outlet can be controlled separately；The cold wind of the air outlet 410 of the air cooling equipment 400 can blow to
The base station 200.
The gas-phase deposition system of the present embodiment, the base station for being arranged in the accommodation room accommodating chamber is separated to be formed it is sealable anti-
Room is answered, spray equipment is arranged in reaction chamber, in this way, the process gas of spray vapor deposition is carried out in closed reaction chamber
, and air cooling equipment is arranged outside the reaction chamber, air cooling equipment does not influence the spray of process gas；Air cooling equipment it is every
The air output of a air outlet can be controlled separately, and the cold wind of air outlet can blow to the base station of the bearing substrate, realize base station
The zonal control of temperature, in vapor deposition processes, substrate 500 is located on base station 200, and then realizes substrate temperature
Zonal control so that each region temperature of substrate is relatively uniform, so that the film thickness that vapor deposition is formed is more
Uniformly.
It is vapor-deposited using the gas-phase deposition system of the present embodiment, needs for substrate to be placed on base station,
When being cooled down without using air cooling equipment, substrate is divided into first area, second area, third from temperature height on earth
The n-th region of region ..., wherein n is greater than the positive integer equal to 2；Fig. 5 is n when being 4, and a kind of situation of film is formed on substrate
Schematic diagram, the thickness for the film that four regions on substrate are formed is 40 nanometers (being indicated with nm) respectively, and 41 nanometers, 42 receive
Rice and 43 nanometers；
The first area of substrate, second area, the position point of the corresponding base station under the n-th region of third region ...
It is not the first region ', the 2nd region ', the 3rd region ... the ' region the n-th ' blows to the first region ' of base station, the 2nd region ', and
The air output of the air outlet in three regions ... the ' region the n-th ' is respectively M1, M2, M3 ... Mn, wherein and M1 > M2 > M3 > ... > Mn；Fig. 6
For when n is 4, the schematic diagram of the relative position of the air output and base station of the air outlet of gas-phase deposition system；In this way, making base station
Each region temperature it is relatively uniform so that the temperature of each region of substrate is relatively uniform, so that on substrate
The film thickness formed that is vapor-deposited is more uniform, as shown in fig. 7, the thickness for the film that four regions on substrate are formed is equal
For 43 nanometers (being indicated with nm).
In the actual production process, by adjusting the air output of each air outlet, it can make vapor deposition on substrate
The film thickness of formation is uniform.
Specifically, as shown in Figure 3 and Figure 4, the mode that the independent control of the air output of each air outlet 410 is realized is to pass through
Setting and the one-to-one mass flow controller 420 of air outlet, each air outlet pass through corresponding mass flow
The air output of the control air outlet of controller 420.
In this way, it may be convenient to realize that the air output of each air outlet can be controlled separately.
Specifically, as shown in fig. 6, the multiple air outlet 410 is uniformly arranged.The air outlet being uniformly arranged to base station
Cooling effect is uniformly, so that being also uniform to the cooling effect of substrate.
Specifically, as shown in Figure 3 and Figure 4, the air cooling equipment includes cold wind main pipeline 430 and stretches out from main pipeline more
A cold wind branch pipe(tube) 431, the other end of the cold wind branch pipe(tube) 431 are the air outlets.
Specifically, the spray fills as shown in figure 3, the horizontally disposed substrate level for carrying it of the base station 200 is placed
300 tops for being set to the base station 200 are set, the multiple air outlet 410 is set to the lower section of the base station 200.
In this way, spray equipment is located at the top of base station, the process gas of spray equipment spray can be sprayed uniformly downwards.
Specifically, as shown in figure 3, the multiple air outlet 410 is in contact with the base station 200.In this way, going out from air outlet
The cold wind come can come into full contact with the base station, improve the efficiency of cooling.
Specifically, as shown in figure 3, the spray equipment 300 includes honeycomb nozzle and nozzle towards base station 200.Nest shape
The process gas that nozzle can make spray equipment spray is more uniform.
The method being vapor-deposited using the gas-phase deposition system of above-described embodiment, is included the following steps:
Base station bearing substrate；
Spray equipment to substrate spray process gas, each air outlet of air cooling equipment according to respective default air output to
Substrate is blown a cold wind over；
Reach the preset time, stops stopping blowing a cold wind over to substrate to substrate spray process gas；
Wherein, the respective default air output of each air outlet of air cooling equipment is according to the respective air output of each air outlet
Tune-up data and substrate on corresponding relationship between the uniformity of film that deposits, reaching for obtaining be each when the default uniformity
The respective air output of air outlet.
Before the gas-phase deposition system for stating embodiment in use, debugged.In multiple debugging process, find
When the uniformity of the film deposited on substrate reaches the requirement of the preset uniformity, each air outlet of air cooling equipment is respective out
Air quantity, the respective default air output of each air outlet as air cooling equipment.
Specifically, the gas-phase deposition system further includes control unit, described control unit and the mass flow are controlled
Device and spray equipment communication connection, for controlling each mass flow controller and spray equipment；
The spray equipment is to substrate spray process gas, and each air outlet of air cooling equipment is according to respective default outlet air
It measures to blow a cold wind over to substrate and specifically comprise the following steps:
Described control unit controls spray equipment to substrate spray process gas, and described control unit controls each quality stream
Amount controller is blown a cold wind over controlling each air outlet according to respective default air output to substrate.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (7)
1. a kind of gas-phase deposition system characterized by comprising
Accommodating chamber；
Be arranged in it is described accommodate the indoor base station for bearing substrate, the base station accommodating chamber is separated to be formed it is sealable instead
Answer room；
The indoor spray equipment being oppositely arranged with base station of the reaction is set, wherein the spray equipment is for spraying gas
The process gas of phase deposition；
Air cooling equipment in the accommodating chamber and outside the reaction chamber is set comprising it is multiple go out the air outlet of cold wind and every
The air output of a air outlet can be controlled separately；The cold wind of the air outlet of the air cooling equipment can blow to the base station；
It further include passing through corresponding quality stream with the one-to-one mass flow controller of air outlet, each air outlet
The air output of amount controller control air outlet；
It further include control unit, described control unit and the mass flow controller communicate to connect, for controlling each quality
Flow controller；
The spray equipment includes honeycomb nozzle and nozzle towards base station.
2. gas-phase deposition system according to claim 1, which is characterized in that the multiple air outlet is uniformly arranged.
3. gas-phase deposition system according to claim 2, which is characterized in that the air cooling equipment include cold wind main pipeline and
The multiple cold wind branch pipe(tube)s stretched out from main pipeline, the other end of the cold wind branch pipe(tube) is the air outlet.
4. gas-phase deposition system according to claim 3, which is characterized in that the horizontally disposed base for carrying it of the base station
Plate is horizontal positioned, and the spray equipment is set to the top of the base station, and the multiple air outlet is set under the base station
Side.
5. gas-phase deposition system according to claim 4, which is characterized in that the multiple air outlet connects with the base station
Touching.
6. according to any gas-phase deposition system of claim 2-5, which is characterized in that described control unit also with the spray
Shower device communication connection, for controlling each spray equipment.
7. a kind of method being vapor-deposited using gas-phase deposition system described in claim 1, which is characterized in that including such as
Lower step:
Base station bearing substrate；
Spray equipment is to substrate spray process gas, and each air outlet of air cooling equipment is according to respective default air output to substrate
It blows a cold wind over；
Reach the preset time, stops stopping blowing a cold wind over to substrate to substrate spray process gas；
Wherein, the respective default air output of each air outlet of air cooling equipment is the tune according to the respective air output of each air outlet
Corresponding relationship between the uniformity of the film deposited in examination data and substrate, what is obtained reaches each outlet air when the default uniformity
The respective air output of mouth；
The gas-phase deposition system further includes control unit, described control unit and the mass flow controller and spray equipment
Communication connection, for controlling each mass flow controller and spray equipment；
The spray equipment to substrate spray process gas, each air outlet of air cooling equipment according to respective default air output to
Substrate, which is blown a cold wind over, to be specifically comprised the following steps:
Described control unit controls spray equipment to substrate spray process gas, and described control unit controls each mass flow control
Device processed is blown a cold wind over controlling each air outlet according to respective default air output to substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510043633.5A CN104561932B (en) | 2015-01-28 | 2015-01-28 | Gas-phase deposition system and vapor deposition method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510043633.5A CN104561932B (en) | 2015-01-28 | 2015-01-28 | Gas-phase deposition system and vapor deposition method |
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| Publication Number | Publication Date |
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| CN104561932A CN104561932A (en) | 2015-04-29 |
| CN104561932B true CN104561932B (en) | 2019-08-27 |
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| CN201510043633.5A Expired - Fee Related CN104561932B (en) | 2015-01-28 | 2015-01-28 | Gas-phase deposition system and vapor deposition method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101044601A (en) * | 2004-08-06 | 2007-09-26 | 东京毅力科创株式会社 | Method and system for substrate temperature profile control |
| CN102691049A (en) * | 2011-03-24 | 2012-09-26 | 初星太阳能公司 | Dynamic system for variable heating or cooling of linearly conveyed substrates |
| CN103014669A (en) * | 2011-09-23 | 2013-04-03 | 理想能源设备(上海)有限公司 | Chemical vapor deposition (CVD) device |
| CN103422074A (en) * | 2013-08-05 | 2013-12-04 | 光垒光电科技（上海）有限公司 | Reaction chamber for sedimentation technology and regulating method for temperature of tray therein |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004006536A (en) * | 2002-05-31 | 2004-01-08 | Ishikawajima Harima Heavy Ind Co Ltd | Method and device for manufacturing thin film |
-
2015
- 2015-01-28 CN CN201510043633.5A patent/CN104561932B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101044601A (en) * | 2004-08-06 | 2007-09-26 | 东京毅力科创株式会社 | Method and system for substrate temperature profile control |
| CN102691049A (en) * | 2011-03-24 | 2012-09-26 | 初星太阳能公司 | Dynamic system for variable heating or cooling of linearly conveyed substrates |
| CN103014669A (en) * | 2011-09-23 | 2013-04-03 | 理想能源设备(上海)有限公司 | Chemical vapor deposition (CVD) device |
| CN103422074A (en) * | 2013-08-05 | 2013-12-04 | 光垒光电科技（上海）有限公司 | Reaction chamber for sedimentation technology and regulating method for temperature of tray therein |
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| Publication number | Publication date |
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| CN104561932A (en) | 2015-04-29 |
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Granted publication date: 20190827 |