CN104538657B - A kind of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film and preparation method thereof - Google Patents

A kind of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film and preparation method thereof Download PDF

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CN104538657B
CN104538657B CN201410785191.7A CN201410785191A CN104538657B CN 104538657 B CN104538657 B CN 104538657B CN 201410785191 A CN201410785191 A CN 201410785191A CN 104538657 B CN104538657 B CN 104538657B
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chitosan
solution
high temperature
proton exchange
cross
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CN104538657A (en
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高山俊
尹珊珊
沈春晖
李伟
李慧琳
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Wuhan University of Technology WUT
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00Fuel cells; Manufacture thereof
    • H01M8/02Details
    • H01M8/0271Sealing or supporting means around electrodes, matrices or membranes
    • H01M8/028Sealing means characterised by their material
    • H01M8/0284Organic resins; Organic polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00Fuel cells; Manufacture thereof
    • H01M8/02Details
    • H01M8/0271Sealing or supporting means around electrodes, matrices or membranes
    • H01M8/0286Processes for forming seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M8/00Fuel cells; Manufacture thereof
    • H01M8/10Fuel cells with solid electrolytes
    • H01M8/12Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte
    • H01M8/1233Fuel cells with solid electrolytes operating at high temperature, e.g. with stabilised ZrO2 electrolyte with one of the reactants being liquid, solid or liquid-charged
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    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

The present invention relates to a kind of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film and preparation method thereof, it is to use following steps products therefrom:1) chitosan solution is prepared;2) solution containing nitrogen organic phosphonic acid is prepared;3) nitrogen organic phosphonic acid solution will be contained to be slowly dropped in chitosan solution, stirred, then amino silicone will be slowly dropped in the mixed solution, and obtain sol solutionses;4) the aldehyde crosslinking agent aqueous solution is slowly added into sol solutionses, is uniformly mixing to obtain coagulant liquid;5) coagulant liquid is poured into polytetrafluoroethylene (PTFE) mould, room temperature is aged 2~3 days after 80 DEG C of drying, and then it is peeled off from polytetrafluoroethylene (PTFE) mould with being heat-treated 2h respectively under the conditions of 150 DEG C, after cooling in 100 DEG C, 120 DEG C successively and is obtained.Preparation process of the present invention is simple, and reaction condition is gentle, and the PEM prepared still has higher proton conductivity, and good thermal stability under high temperature, anhydrous condition.

Description

A kind of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film and its Preparation method
Technical field
The invention belongs to field of fuel cell technology, it is related to a kind of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature PEM and preparation method thereof.
Background technology
Proton Exchange Membrane Fuel Cells (PEMFC) is fuel cell system of the class using PEM as electrolyte, This fuel cell is also frequently referred to as solid polymer fuel cells.And PEM is the core component of fuel cell, It directly affects battery performance and life-span.PEM for PEMFC is needed with high H+Conducting power, in addition it is also necessary to There is good proton conductivity and certain mechanical strength under high temperature low humidity condition of work.
Conventional proton exchange membrane material has perfluorinated sulfonic acid polymer, PAEK, polyether-ether-ketone, chitosan and gathered at present The polymer such as acid amides.The research of the wherein PEM based on chitosan has obtained increasing concern, because shell Glycan is widely present in crab shell and shrimp shell, is the product of chitin deacetylase base, with low toxicity, biocompatibility, degradable Property the advantages of, chitosan film-forming process is simple, and cost is low.In addition, the cyclic structure in chitosan molecule ensure that chitosan film Thermo-chemical stability, and enough mechanical properties.There is hydroxyl and amino on chitosan monomer, show that chitosan film has It is prepared into the potentiality of high-performance proton membrane.But, research shows the matter of non-crosslinked and modified chitosan dry film at room temperature Sub- conductivity is only 10-9S·cm-1, equivalent to insulating materials.This can not meet the requirement to PEM electrical conductivity completely, Therefore processing is modified to natural chitosan film to be very important.
In the modification to chitosan, phosphine (phosphorus) acid cross-linked chitosan is a kind of method for improving electrical conductivity.Phosphine (phosphorus) acid It is a kind of both sexes acid, is both proton acceptor and proton donor.Phosphine (phosphorus) acid degree of dissociation under liquid environment is up to 7.4%, body There is substantial amounts of H in system+, its diffusion rate can reach 2 × 10-5cm2/ s, is a kind of ideal proton carrier.In liquid In state phosphine (phosphorus) acid system, hydrogen bond is mainly formed at H3PO4/H2PO4 -Or H4PO4 +/H3P04Between, pass through intermolecular dynamic hydrogen bond Formation and fracture, make proton in intermolecular jump, so as to complete the transmission of proton.
At present, the sour crosslinked chitosan film of phosphine (phosphorus) has obtained certain achievement in research.Cui et al. using chitosan (CS) with Phosphotungstic acid is prepared for new proton conductive membrane, prepared film is homogeneous, stably, without obvious phenomenon of phase separation, at 210 DEG C Lower excellent heat stability, at 80 DEG C, electrical conductivity is up to 0.024Scm-1.But with the rise of temperature, phosphotungstic acid gathers with shell Ionomer declines between sugar, understand some phosphotungstic acid and leak, thus cause electrical conductivity decline (Cui Z, Liu C,Lu T,etal.Polyelectrolyte complexes of chitosan and phosphotungstic acid as proton-conducting membranes for direct methanol fuel cells[J].Journal of Power Sources,2007,167(1):94-99.)。
The content of the invention
The technical problems to be solved by the invention are that there is provided one kind crosslinking shell for above shortcomings in the prior art Glycan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film and preparation method thereof, this method preparation process is simple, reaction condition Gently, and the PEM for preparing still has higher proton conductivity, and heat endurance under high temperature, anhydrous condition Well.
In order to solve the above technical problems, the technical scheme that the present invention is provided is:
A kind of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film is provided, it is to use following steps Products therefrom:
1) under normal temperature, Chitosan powder is dissolved in aqueous acetic acid, is sufficiently stirred for being uniformly dissolved it, shell is obtained and gathers Sugar juice;
2) nitrogen organic phosphonic acid will be contained to be dissolved in deionized water, lasting stirring at room temperature obtains concentration for 0.17~1.50mol/ L solution containing nitrogen organic phosphonic acid;
3) at room temperature by step 2) gained solution containing nitrogen organic phosphonic acid is slowly dropped to step 1) obtained by chitosan solution, Stir and obtain mixed solution, wherein solution containing nitrogen organic phosphonic acid is 1 with chitosan solution volume ratio:1~2:1, then Amino silicone is slowly dropped in the mixed solution, wherein in amino silicone and the solution containing nitrogen organic phosphonic acid Silicon, P elements mol ratio are 4:1~4:7, stir, obtain sol solutionses;
4) the aldehyde crosslinking agent aqueous solution is slowly added into step 3) in gained sol solutionses, the wherein aldehyde crosslinking agent aqueous solution Volume ratio with sol solutionses is 1:10~1:20, it is uniformly mixing to obtain coagulant liquid;
5) by step 4) gained coagulant liquid pour into polytetrafluoroethylene (PTFE) mould, room temperature be aged 2~3 days after 80 DEG C dry, Then successively in 100 DEG C, 120 DEG C with being heat-treated 2~4h respectively under the conditions of 150 DEG C, by it from polytetrafluoroethylene (PTFE) mould after cooling Upper stripping obtains cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
By such scheme, step 1) the chitosan molecule amount be 5~70,000, deacetylation>85%, the acetic acid is water-soluble Liquid volumetric concentration is 1~2%, and the chitosan solution mass concentration is 1~2%.
By such scheme, step 2) it is described containing nitrogen organic phosphonic acid be ATMP (ATMP), ethylenediamine tetraacetic methene One kind in phosphonic acids (EDTMP), hexapotassium (HDTMP).
By such scheme, step 3) amino silicone be 3- aminopropyl triethoxysilanes (APTES) or 3- amino One kind in propyl trimethoxy silicane (APTMS).
By such scheme, step 4) aldehyde crosslinking agent is one kind in glutaraldehyde or glyoxal, aldehyde crosslinking agent water Liquor capacity concentration is 1~5%.
The preparation method step of cross-linked chitosan of the present invention/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film is as follows:
1) under normal temperature, Chitosan powder is dissolved in aqueous acetic acid, is sufficiently stirred for being uniformly dissolved it, shell is obtained and gathers Sugar juice;
2) nitrogen organic phosphonic acid will be contained to be dissolved in deionized water, lasting stirring at room temperature obtains concentration for 0.17~1.50mol/ L solution containing nitrogen organic phosphonic acid;
3) at room temperature by step 2) gained solution containing nitrogen organic phosphonic acid is slowly dropped to step 1) obtained by chitosan solution, Stir and obtain mixed solution, wherein solution containing nitrogen organic phosphonic acid is 1 with chitosan solution volume ratio:1~2:1, then Amino silicone is slowly dropped in the mixed solution, wherein in amino silicone and the solution containing nitrogen organic phosphonic acid Silicon, P elements mol ratio are 4:1~4:7, stir, obtain sol solutionses;
4) the aldehyde crosslinking agent aqueous solution is slowly added into step 3) in gained sol solutionses, the wherein aldehyde crosslinking agent aqueous solution Volume ratio with sol solutionses is 1:10~1:20, it is uniformly mixing to obtain coagulant liquid;
5) by step 4) gained coagulant liquid pour into polytetrafluoroethylene (PTFE) mould, room temperature be aged 2~3 days after 80 DEG C dry, Then successively in 100 DEG C, 120 DEG C with being heat-treated 2~4h respectively under the conditions of 150 DEG C, by it from polytetrafluoroethylene (PTFE) mould after cooling Upper stripping obtains cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
By such scheme, step 1) the chitosan molecule amount be 5~70,000, deacetylation>85%, the acetic acid is water-soluble Liquid volumetric concentration is 1~2%, and the chitosan solution mass concentration is 1~2%.
By such scheme, step 2) it is described containing nitrogen organic phosphonic acid be ATMP, ethylene diamine tetra methylene phosphonic acid, oneself One kind in the methylenephosphonic acid of diamines four.
By such scheme, step 3) amino silicone be 3- aminopropyl triethoxysilanes or 3- aminopropyl front threes One kind in TMOS.
By such scheme, step 4) aldehyde crosslinking agent is one kind in glutaraldehyde or glyoxal, aldehyde crosslinking agent water Liquor capacity concentration is 1~5%.
The principle of the present invention is:The present invention is using poly- to shell containing nitrogen organic phosphonic acid, amino silicone and aldehyde crosslinking agent Sugar is modified, and the amino on amino and amino silicone on chitosan can be with forming ionomer knot containing nitrogen organic phosphonic acid Structure, it is ensured that the system has preferable filming performance.In addition,-the OH on chitosan can shape with the Si-O keys on amino silicone Into Si-O-Si structures so that the swellbility of film has obtained good control, the pliability without influenceing film.Chitosan and ammonia The phosphine oxygen key on amino, hydroxyl, with organic polyphosphonic on radical siloxane, between phosphine hydroxyl bond hydrogen bond network can be formed, be The conduction of proton provides passage.And aldehyde crosslinking agent cross-linked chitosan is used, schiff bases structure is formed, increases the mechanics of film Performance reduces the swellbility of film simultaneously.
The beneficial effects of the present invention are:1st, film-forming process of the present invention is simple, with low cost, and reaction condition is gentle, and Harmful substance is not produced in preparation process, industrialized mass production is easily realized;2nd, contain in PEM prepared by the present invention Nitrogen organic phosphonic acid can form ionomer structure with chitosan and amino silicone, and produce hydrogen bond action, and the system Nitrogen, phosphine oxygen, phosphine hydroxyl and hydroxyl between can form hydrogen bond network, this causes prepared PEM even in high temperature Also there is higher electrical conductivity under low humidity conditions;3rd, the present invention uses glutaraldehyde or glyoxal cross-linked chitosan, forms schiff bases knot Structure, adds the mechanical property and thermal stability of PEM so that film can be used for a long time under the conditions of 200 DEG C.
Embodiment
To make those skilled in the art more fully understand technical scheme, the present invention is made with reference to embodiment It is described in further detail.
Chitosan powder molecular weight used in the embodiment of the present invention is 7~90,000, deacetylation>85%.
Embodiment 1
A kind of preparation method of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, specific steps are such as Under:
1) under normal temperature, the aqueous acetic acid that 10mL volumetric concentrations are 1% is prepared, 0.1g Chitosan powders are dissolved in acetic acid In the aqueous solution, it is sufficiently stirred for being uniformly dissolved it, obtains chitosan solution;
2) 0.4984g ATMPs are dissolved in 10mL deionized waters, persistently stirring 12h obtains nitrogenous at room temperature Organic phospho acid solution;
3) above-mentioned solution containing nitrogen organic phosphonic acid is slowly dropped in above-mentioned chitosan solution at room temperature, persistently stirred at room temperature Mix 12h and obtain mixed solution, then 4.4274g amino silicones (3- aminopropyl triethoxysilanes) are slowly dropped to described mix Close in solution, wherein amino silicone and silicon, P elements mol ratio in the solution containing nitrogen organic phosphonic acid are 4:1, at room temperature 24h is persistently stirred, sol solutionses are obtained;
4) 1mL volumetric concentrations are slowly added into step 3 for 1% glyoxal solution) obtained by sol solutionses in, stirring 1 ~2h obtains coagulant liquid;
5) by step 4) obtained coagulant liquid poured into polytetrafluoroethylene (PTFE) mould, and 2~3 days are aged at room temperature after 80 DEG C Baking oven in dry 1~2 day, then 2~4h is separately dried with 150 DEG C in 100 DEG C, 120 DEG C successively, by film from poly- four after cooling Taken off in PVF mould, you can obtain cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
Tested through electrochemical workstation, the cross-linked chitosan made by the present embodiment/nitrogenous phosphonic acids based polysiloxane high temperature Silicon P elements mol ratio is 4 in PEM:1, it is that test proton conductivity is under the conditions of 20% in 120 DEG C, relative humidity 0.071S/cm, ion exchange capacity is 0.65mg/mol, and tensile strength is 32.2Mpa, and linear swelling coefficient is 5.24%, is inhaled Water rate is 37.6%, and stability in use is good at 210 DEG C.
Embodiment 2
A kind of preparation method of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, specific steps are such as Under:
1) under normal temperature, the aqueous acetic acid that 10mL volumetric concentrations are 2% is prepared, 0.2g Chitosan powders are dissolved in acetic acid In the aqueous solution, it is sufficiently stirred for being uniformly dissolved it, obtains chitosan solution;
2) 0.9968g ATMPs are dissolved in 10mL deionized waters, persistently stirring 12h obtains nitrogenous at room temperature Organic phospho acid solution;
3) above-mentioned solution containing nitrogen organic phosphonic acid is slowly dropped in above-mentioned chitosan solution at room temperature, persistently stirred at room temperature Mix 12h and obtain mixed solution, then 3.5858g amino silicones (3- TSL 8330s) are slowly dropped to described In mixed solution, wherein amino silicone and silicon, P elements mol ratio in the solution containing nitrogen organic phosphonic acid are 4:2, in room temperature 24h is persistently stirred down, sol solutionses are obtained;
4) 1mL volumetric concentrations are slowly added into step 3 for 2% glutaraldehyde solution) obtained by sol solutionses in, stirring 1 ~2h obtains coagulant liquid;
5) by step 4) obtained coagulant liquid poured into polytetrafluoroethylene (PTFE) mould, and 2~3 days are aged at room temperature after 80 DEG C Baking oven in dry 1~2 day, then 2~4h is separately dried with 150 DEG C in 100 DEG C, 120 DEG C successively, by film from poly- four after cooling Taken off in PVF mould, you can obtain cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
Using with the same method of testing of embodiment one to cross-linked chitosan/poly- silica of nitrogenous phosphonate group obtained by the present embodiment The material of alkane high temperature proton exchange film is tested, the cross-linked chitosan made by the present embodiment/nitrogenous phosphonic acids based polysiloxane Silicon P elements mol ratio is 4 in high temperature proton exchange film:2, test Proton conducting under the conditions of 120 DEG C, relative humidity is 20% Rate is 0.075S/cm, and ion exchange capacity is 0.69mg/mol, and tensile strength is 35.2Mpa, and linear swelling coefficient is 5.84%, water absorption rate is 35.6%, and stability in use is good at 215 DEG C.
Embodiment 3
A kind of preparation method of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, specific steps are such as Under:
1) under normal temperature, the aqueous acetic acid that 10mL volumetric concentrations are 1% is prepared, 0.1g Chitosan powders are dissolved in acetic acid In the aqueous solution, it is sufficiently stirred for being uniformly dissolved it, obtains chitosan solution;
2) 1.6350g ethylene diamine tetra methylene phosphonic acids are dissolved in 10mL deionized waters, persistently stirring 12h is contained at room temperature Nitrogen organic phosphonic acid solution;
3) above-mentioned solution containing nitrogen organic phosphonic acid is slowly dropped in above-mentioned chitosan solution at room temperature, persistently stirred at room temperature Mix 12h and obtain mixed solution, then 4.4274g amino silicones (3- aminopropyl triethoxysilanes) are slowly dropped to described mix Close in solution, wherein amino silicone and silicon, P elements mol ratio in the solution containing nitrogen organic phosphonic acid are 4:3, at room temperature 24h is persistently stirred, sol solutionses are obtained;
4) 1mL volumetric concentrations are slowly added into step 3 for 3% glyoxal solution) obtained by sol solutionses in, stirring 1 ~2h obtains coagulant liquid;
5) by step 4) obtained coagulant liquid poured into polytetrafluoroethylene (PTFE) mould, and 2~3 days are aged at room temperature after 80 DEG C Baking oven in dry 1~2 day, then 2~4h is separately dried with 150 DEG C in 100 DEG C, 120 DEG C successively, by film from poly- four after cooling Taken off in PVF mould, you can obtain cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
Using with the same method of testing of embodiment one to cross-linked chitosan/poly- silica of nitrogenous phosphonate group obtained by the present embodiment The material of alkane high temperature proton exchange film is tested, the cross-linked chitosan made by the present embodiment/nitrogenous phosphonic acids based polysiloxane Silicon P elements mol ratio is 4 in high temperature proton exchange film:3, test Proton conducting under the conditions of 120 DEG C, relative humidity is 20% Rate is 0.080S/cm, and ion exchange capacity is 0.79mg/mol, and tensile strength is 38.2Mpa, and linear swelling coefficient is 6.84%, water absorption rate is 45.6%, and stability in use is good at 205 DEG C.
Embodiment 4
A kind of preparation method of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, specific steps are such as Under:
1) under normal temperature, the aqueous acetic acid that 5mL volumetric concentrations are 2% is prepared, 0.1g Chitosan powders are dissolved in acetic acid In the aqueous solution, it is sufficiently stirred for being uniformly dissolved it, obtains chitosan solution;
2) 2.1800g ethylene diamine tetra methylene phosphonic acids are dissolved in 5mL deionized waters, persistently stirring 12h is contained at room temperature Nitrogen organic phosphonic acid solution;
3) above-mentioned solution containing nitrogen organic phosphonic acid is slowly dropped in above-mentioned chitosan solution at room temperature, persistently stirred at room temperature Mix 12h and obtain mixed solution, then 3.5858g amino silicones (3- TSL 8330s) are slowly dropped to described In mixed solution, wherein amino silicone and silicon, P elements mol ratio in the solution containing nitrogen organic phosphonic acid are 4:4, in room temperature 24h is persistently stirred down, sol solutionses are obtained;
4) 1mL volumetric concentrations are slowly added into step 3 for 5% glutaraldehyde solution) obtained by sol solutionses in, stirring 1 ~2h obtains coagulant liquid;
5) by step 4) obtained coagulant liquid poured into polytetrafluoroethylene (PTFE) mould, and 2~3 days are aged at room temperature after 80 DEG C Baking oven in dry 1~2 day, then 2~4h is separately dried with 150 DEG C in 100 DEG C, 120 DEG C successively, by film from poly- four after cooling Taken off in PVF mould, you can obtain cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
Using with the same method of testing of embodiment one to cross-linked chitosan/poly- silica of nitrogenous phosphonate group obtained by the present embodiment The material of alkane high temperature proton exchange film is tested, the cross-linked chitosan made by the present embodiment/nitrogenous phosphonic acids based polysiloxane Silicon P elements mol ratio is 4 in high temperature proton exchange film:4, test Proton conducting under the conditions of 120 DEG C, relative humidity is 20% Rate is 0.079S/cm, and ion exchange capacity is 0.74mg/mol, and tensile strength is 40.2Mpa, and linear swelling coefficient is 7.84%, water absorption rate is 48.6%, and stability in use is good at 225 DEG C.
Embodiment 5
A kind of preparation method of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, specific steps are such as Under:
1) under normal temperature, the aqueous acetic acid that 10mL volumetric concentrations are 1% is prepared, 0.1g Chitosan powders are dissolved in acetic acid In the aqueous solution, it is sufficiently stirred for being uniformly dissolved it, obtains chitosan solution;
2) 3.0769g hexapotassiums are dissolved in 10mL deionized waters, persistently stirring 12h is contained at room temperature Nitrogen organic phosphonic acid solution;
3) above-mentioned solution containing nitrogen organic phosphonic acid is slowly dropped in above-mentioned chitosan solution at room temperature, persistently stirred at room temperature Mix 12h and obtain mixed solution, then 4.4274g amino silicones (3- aminopropyl triethoxysilanes) are slowly dropped to described mix Close in solution, wherein amino silicone and silicon P elements mol ratio in the solution containing nitrogen organic phosphonic acid are 4:5, hold at room temperature Continuous stirring 24h, obtains sol solutionses;
4) 1mL volumetric concentrations are slowly added into step 3 for 5% glyoxal solution) obtained by sol solutionses in, stirring 1 ~2h obtains coagulant liquid;
5) by step 4) obtained coagulant liquid poured into polytetrafluoroethylene (PTFE) mould, and 2~3 days are aged at room temperature after 80 DEG C Baking oven in dry 1~2 day, then 2~4h is separately dried with 150 DEG C in 100 DEG C, 120 DEG C successively, by film from poly- four after cooling Taken off in PVF mould, you can obtain cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
Using with the same method of testing of embodiment one to cross-linked chitosan/poly- silica of nitrogenous phosphonate group obtained by the present embodiment The material of alkane high temperature proton exchange film is tested, the cross-linked chitosan made by the present embodiment/nitrogenous phosphonic acids based polysiloxane Silicon P elements mol ratio is 4 in high temperature proton exchange film:5, test Proton conducting under the conditions of 120 DEG C, relative humidity is 20% Rate is 0.081S/cm, and ion exchange capacity is 0.78mg/mol, and tensile strength is 44.2Mpa, and linear swelling coefficient is 4.84%, water absorption rate is 40.6%, and stability in use is good at 205 DEG C.
Embodiment 6
A kind of preparation method of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, specific steps are such as Under:
1) under normal temperature, the aqueous acetic acid that 5mL volumetric concentrations are 2% is prepared, 0.1g Chitosan powders are dissolved in acetic acid In the aqueous solution, it is sufficiently stirred for being uniformly dissolved it, obtains chitosan solution;
2) 3.6922g hexapotassiums are dissolved in 5mL deionized waters, persistently stirring 12h is contained at room temperature Nitrogen organic phosphonic acid solution;
3) above-mentioned solution containing nitrogen organic phosphonic acid is slowly dropped in above-mentioned chitosan solution at room temperature, persistently stirred at room temperature Mix 12h and obtain mixed solution, then 3.5858g amino silicones (3- TSL 8330s) are slowly dropped to described In mixed solution, wherein amino silicone and silicon P elements mol ratio in the solution containing nitrogen organic phosphonic acid are 4:6, at room temperature 24h is persistently stirred, sol solutionses are obtained;
4) 1mL volumetric concentrations are slowly added into step 3 for 5% glutaraldehyde solution) obtained by sol solutionses in, stirring 1 ~2h obtains coagulant liquid;
5) by step 4) obtained coagulant liquid poured into polytetrafluoroethylene (PTFE) mould, and 2~3 days are aged at room temperature after 80 DEG C Baking oven in dry 1~2 day, then 2~4h is separately dried with 150 DEG C in 100 DEG C, 120 DEG C successively, by film from poly- four after cooling Taken off in PVF mould, you can obtain cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
Using with the same method of testing of embodiment one to cross-linked chitosan/poly- silica of nitrogenous phosphonate group obtained by the present embodiment The material of alkane high temperature proton exchange film is tested, the cross-linked chitosan made by the present embodiment/nitrogenous phosphonic acids based polysiloxane Silicon P elements mol ratio is 4 in high temperature proton exchange film:6, test Proton conducting under the conditions of 120 DEG C, relative humidity is 20% Rate is 0.086S/cm, and ion exchange capacity is 0.84mg/mol, and tensile strength is 45.2Mpa, and linear swelling coefficient is 6.84%, water absorption rate is 47.6%, and stability in use is good at 235 DEG C.
Embodiment 7
A kind of preparation method of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, specific steps are such as Under:
1) under normal temperature, the aqueous acetic acid that 5mL volumetric concentrations are 1% is prepared, 0.1g Chitosan powders are dissolved in acetic acid In the aqueous solution, it is sufficiently stirred for being uniformly dissolved it, obtains chitosan solution;
2) 4.3077g hexapotassiums are dissolved in 10mL deionized waters, persistently stirring 12h is contained at room temperature Nitrogen organic phosphonic acid solution;
3) above-mentioned solution containing nitrogen organic phosphonic acid is slowly dropped in above-mentioned chitosan solution at room temperature, persistently stirred at room temperature Mix 12h and obtain mixed solution, then 4.4274g amino silicones (3- aminopropyl triethoxysilanes) are slowly dropped to described mix Close in solution, wherein amino silicone and silicon P elements mol ratio in the solution containing nitrogen organic phosphonic acid are 4:7, hold at room temperature Continuous stirring 24h, obtains sol solutionses;
4) 1mL volumetric concentrations are slowly added into step 3 for 5% glutaraldehyde solution) obtained by sol solutionses in, stirring 1 ~2h obtains coagulant liquid;
5) by step 4) obtained coagulant liquid poured into polytetrafluoroethylene (PTFE) mould, and 2~3 days are aged at room temperature after 80 DEG C Baking oven in dry 1~2 day, then 2~4h is separately dried with 150 DEG C in 100 DEG C, 120 DEG C successively, by film from poly- four after cooling Taken off in PVF mould, you can obtain cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
Using with the same method of testing of embodiment one to cross-linked chitosan/poly- silica of nitrogenous phosphonate group obtained by the present embodiment The material of alkane high temperature proton exchange film is tested, the cross-linked chitosan made by the present embodiment/nitrogenous phosphonic acids based polysiloxane Silicon P elements mol ratio is 4 in high temperature proton exchange film:7, test Proton conducting under the conditions of 120 DEG C, relative humidity is 20% Rate is 0.084S/cm, and ion exchange capacity is 0.80mg/mol, and tensile strength is 41.2Mpa, and linear swelling coefficient is 8.84%, water absorption rate is 37.6%, and stability in use is good at 205 DEG C.

Claims (10)

1. a kind of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, the film can be grown under the conditions of 200 DEG C Phase uses, it is characterised in that it is to use following steps products therefrom:
1) under normal temperature, Chitosan powder is dissolved in aqueous acetic acid, is sufficiently stirred for being uniformly dissolved it, obtains chitosan molten Liquid;
2) nitrogen organic phosphonic acid will be contained to be dissolved in deionized water, it is 0.17~1.50mol/L's that lasting stirring, which obtains concentration, at room temperature Solution containing nitrogen organic phosphonic acid;
3) at room temperature by step 2) gained solution containing nitrogen organic phosphonic acid is slowly dropped to step 1) obtained by chitosan solution, fully Mixed solution is uniformly mixing to obtain, wherein solution containing nitrogen organic phosphonic acid is 1 with chitosan solution volume ratio:1~2:1, then by ammonia Radical siloxane is slowly dropped in the mixed solution, wherein amino silicone and silicon, phosphorus in the solution containing nitrogen organic phosphonic acid Elemental mole ratios are 4:1~4:7, stir, obtain sol solutionses;
4) the aldehyde crosslinking agent aqueous solution is slowly added into step 3) gained sol solutionses in, wherein the aldehyde crosslinking agent aqueous solution with it is molten The volume ratio of glue is 1:10~1:20, it is uniformly mixing to obtain coagulant liquid;
5) by step 4) gained coagulant liquid pour into polytetrafluoroethylene (PTFE) mould, room temperature be aged 2~3 days after 80 DEG C drying, then It is shelled from polytetrafluoroethylene (PTFE) mould after cooling with being heat-treated 2~4h respectively under the conditions of 150 DEG C in 100 DEG C, 120 DEG C successively From i.e. obtain cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
2. cross-linked chitosan according to claim 1/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, its feature exists In step 1) the chitosan molecule amount be 5~70,000, deacetylation>85%, the aqueous acetic acid volumetric concentration be 1~ 2%, the chitosan solution mass concentration is 1~2%.
3. cross-linked chitosan according to claim 1/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, its feature exists In step 2) described containing nitrogen organic phosphonic acid it is ATMP, ethylene diamine tetra methylene phosphonic acid, hexapotassium One kind.
4. cross-linked chitosan according to claim 1/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, its feature exists In step 3) amino silicone is one kind in 3- aminopropyl triethoxysilanes or 3- TSL 8330s.
5. cross-linked chitosan according to claim 1/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, its feature exists In step 4) aldehyde crosslinking agent is one kind in glutaraldehyde or glyoxal, aldehyde crosslinking agent aqueous solution volumetric concentration is 1~ 5%.
6. a kind of preparation method of cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film, the film is in 200 DEG C of bars It can be used for a long time under part, it is characterised in that step is as follows:
1) under normal temperature, Chitosan powder is dissolved in aqueous acetic acid, is sufficiently stirred for being uniformly dissolved it, obtains chitosan molten Liquid;
2) nitrogen organic phosphonic acid will be contained to be dissolved in deionized water, it is 0.17~1.50mol/L's that lasting stirring, which obtains concentration, at room temperature Solution containing nitrogen organic phosphonic acid;
3) at room temperature by step 2) gained solution containing nitrogen organic phosphonic acid is slowly dropped to step 1) obtained by chitosan solution, fully Mixed solution is uniformly mixing to obtain, wherein solution containing nitrogen organic phosphonic acid is 1 with chitosan solution volume ratio:1~2:1, then by ammonia Radical siloxane is slowly dropped in the mixed solution, wherein amino silicone and silicon, phosphorus in the solution containing nitrogen organic phosphonic acid Elemental mole ratios are 4:1~4:7, stir, obtain sol solutionses;
4) the aldehyde crosslinking agent aqueous solution is slowly added into step 3) gained sol solutionses in, wherein the aldehyde crosslinking agent aqueous solution with it is molten The volume ratio of glue is 1:10~1:20, it is uniformly mixing to obtain coagulant liquid;
5) by step 4) gained coagulant liquid pour into polytetrafluoroethylene (PTFE) mould, room temperature be aged 2~3 days after 80 DEG C drying, then It is shelled from polytetrafluoroethylene (PTFE) mould after cooling with being heat-treated 2~4h respectively under the conditions of 150 DEG C in 100 DEG C, 120 DEG C successively From i.e. obtain cross-linked chitosan/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film.
7. the preparation side of cross-linked chitosan according to claim 6/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film Method, it is characterised in that step 1) the chitosan molecule amount be 5~70,000, deacetylation>85%, the aqueous acetic acid volume Concentration is 1~2%, and the chitosan solution mass concentration is 1~2%.
8. the preparation side of cross-linked chitosan according to claim 6/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film Method, it is characterised in that step 2) it is described containing nitrogen organic phosphonic acid be ATMP, ethylene diamine tetra methylene phosphonic acid, hexamethylene diamine four One kind in methylenephosphonic acid.
9. the preparation side of cross-linked chitosan according to claim 6/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film Method, it is characterised in that step 3) amino silicone be 3- aminopropyl triethoxysilanes or 3- aminopropyl trimethoxy silicon One kind in alkane.
10. the preparation side of cross-linked chitosan according to claim 6/nitrogenous phosphonic acids based polysiloxane high temperature proton exchange film Method, it is characterised in that step 4) aldehyde crosslinking agent is one kind in glutaraldehyde or glyoxal, aldehyde crosslinking agent aqueous liquid Product concentration is 1~5%.
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