CN104536266B - A kind of dry film photoresist layered product - Google Patents
A kind of dry film photoresist layered product Download PDFInfo
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- CN104536266B CN104536266B CN201510050337.8A CN201510050337A CN104536266B CN 104536266 B CN104536266 B CN 104536266B CN 201510050337 A CN201510050337 A CN 201510050337A CN 104536266 B CN104536266 B CN 104536266B
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Abstract
The invention discloses a kind of dry film photoresist layered product, including supporting layer, coated on above support layer the first resist layer and coated on the second resist layer above the first resist layer;The acid value of first resist layer is 80 ~ 400 mgKOH/g, and the acid value of the second resist layer is higher 2 ~ 41.2mgKOH/g than the first resist layer acid value.The present invention forms good figure side pattern, unexposed figure glue-line can be removed preferably using the resist of the double-layer structure of different acid values after anti-aging drug development.Make it in the fields such as the manufacture of manufacture, the semiconductor packages of printed circuit board, lead frame etc. etc., the Precision Machining of metal, the dry film photoresist laminate material of application is used or plated as etching, after graph exposure development, there is extraordinary pattern line side pattern.
Description
Technical field
The present invention relates to a kind of dry film photoresist layered products carrying out aqueous slkali development.
Background technology
In the manufacture of printed circuit board, lead frame, semiconductor packages etc., BGA (Ball Grid Array), CPS
In the encapsulation of (Chip Size Package) etc., dry film photoresist layered product is widely used in the against corrosion of the processes such as etching or plating
Agent material.For example, when manufacturing printed circuit board, first, the laminating film resist layer laminate on copper base, with figure
Mask cover in dry film photoresist layered product, be exposed, after graph exposure, remove unexposed position with developer solution, then real
It applies etching or electroplating processes and forms figure, finally removal cured portion is removed with remover, to realize pattern transfer.
In recent years, develop towards light and short direction with electronic equipment, printed circuit board mounted, lead frame
The line size of the figures such as frame is also smaller and smaller, and substrate and the resin combination contact area for having formed figure are also at and become smaller
Trend, in order to manufacture the line pattern of this thin space with higher yields, this requires dry film photoresist layered products to have
Good resolution ratio and side pattern.
But existing technology is, after graph exposure, development, in unexposed figure close to the side of exposed portion
Root, circuit is meticulous cause to rinse dead angle etc. due to, be susceptible to the residue glue that lye fails to wash away, in subsequent etching or
When being electroplated, and finally removing the resist after solidification, accordingly, copper lines just form the burr of evagination and the gold that coating is recessed inward
Belong to pit-hole.When pattern line gap is narrower, this residue glue is serious, and extreme case is exactly that the glue surface between lines is
It removes, but between lines, there are still one layer of very thin residue glue, resolution ratio to be promoted for metal surface.Although against corrosion by being promoted
The acid value of oxidant layer, some improvement, but these methods can be obtained by reducing the methods of the molecular weight of alkali soluble resin in resist
Use but also development after pattern line side bad appearance, become intolerant to alkali cleaning, lines corner angle become fuzzy.
Invention content
In view of the above-mentioned deficiencies in the prior art, it is an object of the present invention to provide a kind of dry film photoresist layered product, printing
In the fields such as the manufacture of manufacture, the semiconductor packages of circuit board, lead frame etc. etc., the Precision Machining of metal, used as etching
Or the dry film photoresist laminate material of plating application has extraordinary pattern line side pattern after graph exposure development.
The purpose of the present invention is what is be achieved through the following technical solutions:A kind of dry film photoresist layered product, including supporting layer,
Coated on above supporting layer the first resist layer and coated on the second resist layer above the first resist layer;Described
The acid value of one resist layer is 80~400mgKOH/g, and the acid value of the second resist layer is 82~441.2mgKOH/g, also, the
The acid value of two resist layers is higher 2~41.2mgKOH/g than the first resist layer acid value.
Further, the first resist layer thickness is 5~50 microns, and the second resist layer thickness is 1-10 microns.
Further, first resist layer and the second resist layer by mass fraction be 45~70% it is carboxylic
Alkali-soluble polymer, mass fraction are 15~45% containing at least one polymerizable unsaturated bond monomer, mass fraction
For 0.5~10% photoinitiator, mass fraction be 0.01~5% additive composition.
Further, the carboxylic alkali-soluble polymer is by one or more carboxylic copolymerization units monomers,
It is obtained according to arbitrary proportioning copolymerization with the copolymerization units monomer of one or more not carboxyl groups;The carboxylic copolymerization is single
First monomer is selected from itaconic acid, crotonic acid, acrylic acid, methacrylic acid, maleic acid half ester, maleic acid, fumaric acid, second
Alkenyl acetic acid and its acid anhydrides etc.;The copolymerization units monomer of the not carboxyl group is selected from (methyl) methyl acrylate, (methyl)
Ethyl acrylate, (methyl) propyl acrylate, (methyl) isopropyl acrylate, (methyl) n-butyl acrylate, (methyl) propylene
Sour isobutyl ester, (methyl) Isooctyl acrylate monomer, (methyl) lauryl acrylate, (methyl) octadecyl acrylate, (methyl) propylene
Acid -2- hydroxy methacrylates, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid -4- hydroxybutyls, polyethyleneglycol (first
Base) acrylate, (methyl) acrylic acid 2- hydroxy methacrylates, (methyl) acrylonitrile, (methyl) glycidyl acrylate, N, N-
Dimethyl (methyl) ethyl acrylate, N, N- diethyl (methyl) ethyl acrylate, N, N- dimethyl (methyl) propyl acrylate,
N, N- diethyl (methyl) propyl acrylate, N, N- dimethyl (methyl) butyl acrylate, N, N- diethyl (methyl) acrylic acid
Butyl ester, (methyl) acrylamide, N- methylols-acrylamide, N- butoxymethyls-acrylamide, styrene, (methyl) propylene
Acid benzyl ester, Phenoxyethyl (methyl) acrylate, (alkoxylate) nonyl phenol (methyl) acrylate etc..
Further, the weight average molecular weight of the carboxylic alkali-soluble polymer is 10000-200000, further
It is preferred that 10000-120000.
Further, described containing at least one polymerizable unsaturated bond monomer, it is selected from trimethylolpropane tris propylene
Acid esters, (ethoxy) propoxylation trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythrite tetrapropylene acid
Ester, dipentaerythritol tetraacrylate, Dipentaerythritol Pentaacrylate, dipentaerythritol hexaacrylate, polyethylene glycol two
Acrylate, polypropyleneglycol diacrylate, ethoxylated bisphenol a diacrylate, propoxylated bisphenol diacrylate,
Glycerin tripropionate.
Further, the photoinitiator is 2,4,5- triarylimidazoles dimers or 2,4,5- triarylimidazoles dimers
Derivative.
Further, the photoinitiator is by initiator aid and 2,4,5- triarylimidazoles dimers or 2,4,5- tri- virtues
The derivative of base imidazoles dimer is mixed according to arbitrary ratio;The initiator aid is by aromatic ketone, quinone, styrax chemical combination
Object, benzil derivatives, acridine derivatives, N- phenylglycines derivative, coumarin series compounds, in oxazole based compound
It is one or more according to arbitrary than mixing composition.
Further, the additive is by dyestuff, light colour coupler, quality heat stabilizer, plasticizer, pigment, filler, defoaming
Agent, fire retardant, stabilizer, levelling agent, stripping accelerating agent, antioxidant, fragrance, preparation, one kind in thermal cross-linking agent or more
Kind is according to arbitrary proportioning mixing composition.
The beneficial effects of the present invention are:The present invention is exposed using the resist of the double-layer structure of different acid values in resist
After photodevelopment, good figure side pattern is formed, unexposed figure glue-line can be removed preferably.
Specific implementation mode
A kind of dry film photoresist layered product of the present invention, including supporting layer, coated on the first resist layer above supporting layer
And the second resist layer above coating and the first resist layer;The acid value of first resist layer be 80~
The acid value of 400mgKOH/g, the second resist layer are 82~441.2mgKOH/g, also, the acid value of the second resist layer is than first
High 2~the 41.2mgKOH/g of resist layer acid value.
The present invention uses the resist of the double-layer structure of different acid values so that it is formed good after anti-aging drug development
Good figure side pattern, unexposed figure glue-line can be removed preferably.
Above-mentioned first resist layer thickness is 5~50 microns, and the second resist layer thickness is 1-10 microns.
Above-mentioned first resist layer and the second resist layer by carboxylic alkali-soluble polymer (A), contain at least one
A polymerizable unsaturated bond monomer (B), photoinitiator (C), additive (D) composition.
1. the dosage of the carboxylic alkali-soluble polymer (A) accounts for the 45-70% of total resist weight;First is against corrosion
In oxidant layer and the second resist layer, due to the dosage difference of carboxylic alkali-soluble polymer or carboxylic alkali-soluble
Polymer acid number is different, causes the acid value of the two different.Two layers of acid value height can be by increasing or decreasing the dosage of A;Or
When synthesizing A, increases or decreases the methods of carboxyl group-containing monomer dosage and controlled.Carboxylic alkali-soluble polymer is by one kind
Or the copolymerization units monomer of a variety of carboxylic copolymerization units monomers and one or more not carboxyl groups is according to arbitrary proportioning
It is copolymerized and obtains;Prepared by the available well known preparation method of preparation method, such as polymerisation in solution, suspension polymerisation.Wherein, carboxylic
Copolymerization units monomer is selected from itaconic acid, crotonic acid, acrylic acid, methacrylic acid, maleic acid half ester, maleic acid, anti-butylene
Diacid, vinyl acetic acid and its acid anhydrides etc.;The copolymerization units monomer of the not carboxyl group be selected from (methyl) methyl acrylate,
(methyl) ethyl acrylate, (methyl) propyl acrylate, (methyl) isopropyl acrylate, (methyl) n-butyl acrylate, (first
Base) isobutyl acrylate, (methyl) Isooctyl acrylate monomer, (methyl) lauryl acrylate, (methyl) octadecyl acrylate, (first
Base) 2-Hydroxy ethyl acrylate, (methyl) 2-hydroxypropyl acrylate, (methyl) acrylic acid -4- hydroxybutyls, polyethylene glycol
Single (methyl) acrylate, (methyl) acrylic acid 2- hydroxy methacrylates, (methyl) acrylonitrile, (methyl) glycidyl
Ester, N, N- dimethyl (methyl) ethyl acrylate, N, N- diethyl (methyl) ethyl acrylate, N, N- dimethyl (methyl) propylene
Propyl propionate, N, N- diethyl (methyl) propyl acrylate, N, N- dimethyl (methyl) butyl acrylate, N, N- diethyl (methyl)
Butyl acrylate, (methyl) acrylamide, N- methylols-acrylamide, N- butoxymethyls-acrylamide, styrene, (first
Base) benzyl acrylate, Phenoxyethyl (methyl) acrylate, (alkoxylate) nonyl phenol (methyl) acrylate etc..
The preferred 10000-200000 of weight average molecular weight of carboxylic alkali-soluble polymer, in terms of developability, further
It is preferred that 120000 hereinafter, from resistance to corner angle are improved and side is corroded, preferably 10000 or more.
To ensure that the second resist layer is higher 2~41.2mgKOH/g than the first resist layer acid value, following two methods are all
It is feasible:Increase dosages of the alkali-soluble polymer A in the second resist layer;Or synthesizing what the second resist layer used
When A, increase carboxyl group-containing monomer dosage.
2. the above-mentioned dosage containing at least one polymerizable unsaturated bond monomer B, from improving in terms of light sensitivity angle, preferably
More than the 15% of resist weight or its, in terms of final alkali cleaning striping angle, preferably resist weight 45% or its with
Under.It is selected from trimethylolpropane trimethacrylate, (ethoxy) propoxylation containing at least one polymerizable unsaturated bond monomer
Trimethylolpropane trimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol tetrapropylene
Acid esters, Dipentaerythritol Pentaacrylate, dipentaerythritol hexaacrylate, polyethyleneglycol diacrylate, polypropylene glycol two
Acrylate, ethoxylated bisphenol a diacrylate, propoxylated bisphenol diacrylate, glycerin tripropionate.From development
From the point of view of resolution ratio, preferably (ethoxy) propoxylation trimethylolpropane trimethacrylate, (ethoxy) propoxylated bisphenol
Diacrylate and polyethyleneglycol diacrylate.Citing may be selected for example, the Sartomer trade mark in alternative commercialization monomer
SR454, CD542, SR602, SR541, SR480, SR252, SR644 etc..
Containing at least one polymerizable unsaturated bond monomer used in first resist layer and the second resist layer
Type and dosage can be identical, also can be different.
3. the dosage of above-mentioned photoinitiator C is the 0.5-10% of resist weight, when photoinitiator dosage is less than 0.5%,
Its light sensitivity is deteriorated;When photoinitiator dosage is higher than 10%, the reduction of photosensitive dry film resolution ratio may be caused.Photoinitiator is 2,
The derivative of 4,5- triarylimidazoles dimer or 2,4,5- triarylimidazoles dimers.It can illustrate out, 2- (Chloro-O-Phenyl)-
4,5- diphenyl-imidazoles dimer, two (methoxyphenyl) imidazole dimers of 2- (Chloro-O-Phenyl) -4,5-, 2- (o-fluorophenyl) -
4,5- diphenyl-imidazoles dimer, 2- (o-methoxyphenyl) -4,5- diphenyl-imidazoles dimer, 2- (p-methoxyphenyl) -
4,5- diphenyl-imidazole dimers etc..
The initiator can also include initiator aid, and initiator aid can enumerate, thioxanthones, benzoin benzene
Base ether, two ketones, benzoin methyl ether, N, N'- tetramethyl -4,4'- diaminobenzophenones (Michler's keton), N, N'- tetrems
Base -4,4'- diaminobenzophenones, 4- methoxyl group -4'- dimethylamino benzophenones, 2- benzyl -2- dimethylaminos -1-
The equal aromatic ketones of (4- morpholino phenyls)-butanone-1,2- methyl-1-[4- (methyl thio) phenyl]-2- morpholinoes-acetone-1,
2- ethyl hydrazine, phenanthrenequione, 2- tertiary butyls anthraquinone, prestox anthraquinone, 1,2 benzae thracene quinone, 2,3- benzos anthraquinone, 2- phenyl anthraquinone,
2,3- diphenyl anthraquinone, 1- chloroanthraquinones, 2-methylanthraquinone, 1,4- naphthoquinones, 9,10- phenanthrenequione, 2- methyl 1,4- naphthoquinones, 2,3- diformazans
The quinones such as base anthraquinone, benzoin methyl ether, benzoin ethyl ether, the benzoin ether compounds such as styrax phenyl ether, styrax, methyl
The benzoin compounds such as styrax, ethyl styrax, the benzil derivatives such as benzil dimethyl ketal, 9- phenylacridines, 1,
The acridine derivatives such as bis- (9, the 9'- acridine) heptane of 7-, the N- phenylglycine derivatives such as N- phenylglycines, coumarin series
Compound, oxazole based compound etc..
The type and dosage of initiator used in first resist layer and the second resist layer can be identical, also may not be used
Together.
4., can be as needed other than such as mentioned component, additive D is added.Additive D accounts for the 0.01 of resist weight
~5%.Additive is the light colour couplers such as malachite green and other dyes, colorless crystal violet, quality heat stabilizer, plasticizer, pigment, fills out
In material, antifoaming agent, fire retardant, stabilizer, levelling agent, stripping accelerating agent, antioxidant, fragrance, preparation, thermal cross-linking agent etc.
One or more mixtures according to arbitrary proportioning mixing composition.
The type and dosage of additive used in first resist layer and the second resist layer can be identical, also may not be used
Together.
The dry film photoresist layered product of the present invention, can be as needed, by carboxylic alkali-soluble polymer, containing at least
One polymerizable unsaturated bond monomer, photoinitiator, additive are dissolved in methanol, ethyl alcohol, isopropanol, acetone, butanone, methyl
Cellosolve, toluene, N,N-dimethylformamide, propylene glycol monomethyl ether, propylene glycol methyl ether acetate equal solvent or these solvents it is mixed
In bonding solvent, used with the solution state of solid content 10-80%.
Dry film photoresist layered product of the present invention can obtain in the following manner:For example, modulating the first resist layer respectively
The solution of solution, the second resist layer, is coated with the solution of the first resist layer on certain thickness colourless support, and by its
It is dry.After drying, continue the solution that the second resist layer is coated on the first resist layer, and be dried.
Coating method can be used bar coater coating, reverse roller coating spreader, gravure coater, comma spreader, curtain
Coating method known in curtain coater etc. carries out.The drying modes such as infra-red drying, heated-air drying can be used in drying mode.Drying temperature
It is carried out 1-30 minutes at 50-120 DEG C.
The solution of the solution of above-mentioned first resist layer, the second resist layer can also be flowed extrusion coated by multilayer slope
Disposably it is coated with.
Above-mentioned water white transparency support can be low density polyethylene (LDPE), high density polyethylene (HDPE), polypropylene, polyester, gather to benzene
Naphthalate, makrolon, polyarylate, etc. films.For dry film photoresist layered product, in order to avoid moisture is to its object
Property and application conditions impact, preferably supporting carrier film be polyethylene terephthalate, polyethylene and polypropylene it is thin
Film.
Water white transparency support body thickness be 10-100 μm, preferably 15-80 μm, more preferable 15-40 μm of poly terephthalic acid
Glycol ester film.
Then, layer stackup is used to protect dry film photoresist layered product on above-mentioned coated dry film photoresist layered product
Polymeric roofing membrane finally obtains dry film.Cover film is as transparent support film, preferably low-moisture permeability, easily peelable
Resin film, but can be transparent also opaque.It is preferred that cover film be the polyethylene terephthalate with 5-100 μ m thicks,
The resin films such as polyethylene and polypropylene.
With reference to embodiment, the invention will be further described.
Embodiment (embodiment 1-5, comparative example 1-3)
(1) prepare following alkali-soluble polymer resin (A) carboxylic-containing acid.
In a nitrogen atmosphere, to equipped with heating device, agitating paddle, serpentine condenser, constant pressure funnel and thermometer
500 milliliters of four openning flasks in be added 120 milliliters of butanone, be added polymer formulators used in whole monomers, open
The temperature of heating device is increased to 80 DEG C by agitating device.Then, in a nitrogen atmosphere, 0.8 gram is slowly added dropwise into reaction bulb
30 milliliters of butanone solutions of azodiisobutyronitrile, dropwise addition process last about 1.5 hours.After being added dropwise, continue heat preservation 4 hours.
Then, the azodiisobutyronitrile of 0.6g is dissolved in 40 milliliters of butanone, is added drop-wise in reaction solution at twice, every time
Time for adding is 15 minutes, just carries out being added dropwise for second after keeping the temperature 1 hour after dripping for the first time.After dripping, continue heat preservation 2
Hour.Stop heating and stirring, be cooled to room temperature, takes out reaction solution, obtain alkali-soluble polymer resin solution (A-1), alkali soluble
Property fluoropolymer resin weight average molecular weight be 110,000, measure its solid content be 40.1%.
With same method, synthesis alkali-soluble polymer Resin A -2 to monomer composition quality used in A-5. polymer
It is more as shown in table 1 than, obtained polymer average molecular weight and solid content.
Table 1
(2) preparation is following contains at least one polymerizable unsaturated bond monomer (B):
B-1:(3) Sartomer monomer SR454, ethoxy unit number are to ethoxylated trimethylolpropane triacrylate
B-2:(10) Sartomer monomer SR602, ethoxy unit number are to ethoxylated bisphenol a diacrylate
B-3:Polyethylene glycol (600) diacrylate (Sartomer monomer SR252)
(3) prepare following photoinitiators (C)
C-1:2- (Chloro-O-Phenyl) -4,5- diphenyl-imidazole dimers
C-2:4,4 '-bis- (diethylamino) benzophenone
C-3:2- isopropyl thioxanthones
(4) prepare following additives (D):
D-1:Colorless crystal violet
D-2:Alkaline green pigment
D-3:Magnificent green pigment
D-4:Trisbromomethyl benzene sulphur sulfone
(5) prepare following solvents (E):
E-1:Butanone
(6) resist layer solution is prepared, as shown in table 2.
Table 2
(7) after mixing according to the proportioning of table 2, respectively by being sufficiently stirred, mixing, deaeration, according to the coating side of table 3
Formula is coated.
Table 3
It is coated with using bar coater and the first resist layer solution is uniformly coated on as the poly- to benzene of 18 μ m-thicks of support
Naphthalate film surface, it is 2 minutes dry in 90 DEG C of air dry oven, it then takes out, forms thick about 20 μm
First resist layer continues that the second resist layer solution is evenly coated in 1 coating surface of anti-corrosion agent composition with bar coater, 90
DEG C air dry oven in re-dry 2 minutes, ultimately form the second resist layer.Dry film photoresist layer overall thickness is 25 μm of (its
In 20 μm of the first resist thickness, the second 5 μm of resist thickness).Then, resist layer surface is bonded 25 μ as protective layer
The polyethylene film of m thickness, to obtain dry film photoresist layered product.
(8) performance evaluation
1. the processing of substrate surface:Light sensitivity and adhesive force evaluation substrate are by being 1.5mm, stacking by thickness
After the copper-clad laminate surface of 35 μm of rolled copper foils carries out wet type polishing roll polishing, then carry out jet cleaning polishing (injection pressure
For 0.2MPa).
2. stacking:Under 105 DEG C of roller temperature, the protective film of dry film photoresist layered product is removed on one side, uses heat on one side
Laminating machine is rolled resist layer is pressed in by surface processing and is preheating on 60 DEG C of copper-clad laminate.Pressure control exists
0.3Mpa, stacking speed are 1.5 ms/min.
3. exposure:There to be the film of circuitous pattern to be placed on support, compress, be exposed using ultrahigh pressure mercury lamp,
Exposure energy is adjusted to until 21 lattice exposure guide rules (Stouffer Graphic Arts equipment companies) are exposed to the 8th lattice.
4. development:After the support stripping above the resist after above-mentioned exposure, 30 DEG C are sprayed in the defined time
1.2 mass % aqueous sodium carbonate, dissolving removal resist layer unexposed portion.The resist layer of unexposed portion is complete
The minimum time that fully dissolved needs is as minimum developing time.
5. resolution ratio is evaluated:After the PE films for removing manufactured photosensitive dry film resist layer laminate, Heating roll is utilized
Stacking dry film is carried out on copper coin.Here, being 1 using the width with exposed portion and unexposed portion:1 wiring pattern
Mask is exposed, and movie queen is shown with the 1.5 of minimum developing time, and the minimum mask for having normally formed solidification resist line is wide
Spend the value as resolution ratio.
◎:Resolution value is less than or equal to 15 μm;
○:Resolution value is to be less than or equal to 20 μm more than 15 μm
△:Resolution value is more than 20 μm
6. figure side pattern is evaluated:After the PE films for removing manufactured photosensitive dry film resist layer laminate, using adding
Hot-pressing roller carries out stacking dry film on copper coin.Here, being all 15 μm using the width with exposed portion and unexposed portion
The mask of wiring pattern is exposed, and movie queen is shown with the 1.5 of minimum developing time, will normally form solidification resist line
Item, by microscope, whether observation unexposed portion lines remove.With wide perpendicular to lines, the residue glue for being parallel to copper foil surface
Degree size is evaluated, and residue glue maximum width is found out along lines, and residue glue maximum width is smaller, and performance is better.
◎:Residue glue size is less than or equal to 0.5 μm;
○:Residue glue size is more than 0.5 μm, is less than or equal to 2 μm;
△:Residue glue size is more than 2 μm;
Evaluation result is as shown in table 4.
By the above test result it is found that the present invention can provide a kind of photosensitive dry film resist layer laminate, in printing electricity
In the fields such as road plate, lead frame, semiconductor packages, the Precision Machining of photovoltaic cell, metal, as resist material against corrosion,
Better figure side pattern can be obtained especially for the figure circuit of thin space, after development, be conducive to the promotion of resolution ratio.
Claims (7)
1. a kind of dry film photoresist layered product, which is characterized in that including supporting layer, coated on the first resist above supporting layer
Layer and coated on the second resist layer above the first resist layer;The acid value of first resist layer be 105.2 ~
128.6 mgKOH/g, the acid value of the second resist layer are 115.2 ~ 154.4mgKOH/g, also, the acid value of the second resist layer
It is higher 2 ~ 41.2mgKOH/g than the first resist layer acid value;
The first resist layer thickness is 5 ~ 50 microns, and the second resist layer thickness is 1-10 microns;
Carboxylic alkali-soluble polymer that first resist layer and the second resist layer are 45 ~ 70% by mass fraction,
Mass fraction be 15 ~ 45% containing at least one polymerizable unsaturated bond monomer, mass fraction be 0.5 ~ 10% it is light-initiated
Agent, the additive that mass fraction is 0.01 ~ 5% form.
2. dry film photoresist layered product according to claim 1, which is characterized in that the carboxylic alkali-soluble polymerization
Object by the copolymerization units monomer of one or more carboxylic copolymerization units monomers and one or more not carboxyl groups according to
Arbitrary proportioning is copolymerized and obtains;The carboxylic copolymerization units monomer be selected from itaconic acid, crotonic acid, acrylic acid, methacrylic acid,
Maleic acid half ester, maleic acid, fumaric acid, vinyl acetic acid and its acid anhydrides;The copolymerization list of the not carboxyl group
First monomer is selected from(Methyl)Methyl acrylate,(Methyl)Ethyl acrylate,(Methyl)Propyl acrylate,(Methyl)Acrylic acid isopropyl
Ester,(Methyl)N-butyl acrylate,(Methyl)Isobutyl acrylate,(Methyl)Isooctyl acrylate monomer,(Methyl)Lauryl
Ester,(Methyl)Octadecyl acrylate,(Methyl)2-Hydroxy ethyl acrylate,(Methyl)2-hydroxypropyl acrylate,(Methyl)
Acrylic acid -4- hydroxybutyls, polyethyleneglycol(Methyl)Acrylate, polypropylene glycol list(Methyl)Acrylate,(Methyl)Third
Alkene nitrile,(Methyl)Glycidyl acrylate, N, N- dimethyl(Methyl)Ethyl acrylate, N, N- diethyl(Methyl)Acrylic acid
Ethyl ester, N, N- dimethyl(Methyl)Propyl acrylate, N, N- diethyl(Methyl)Propyl acrylate, N, N- dimethyl(Methyl)Third
Olefin(e) acid butyl ester, N, N- diethyl(Methyl)Butyl acrylate,(Methyl)Acrylamide, N- methylols-acrylamide, N- butoxy
Methyl-propen amide, styrene,(Methyl)Benzyl acrylate, Phenoxyethyl(Methyl)Acrylate, nonyl phenol(Methyl)
Acrylate.
3. dry film photoresist layered product according to claim 2, which is characterized in that the carboxylic alkali-soluble polymerization
The weight average molecular weight of object is 10000-200000.
4. dry film photoresist layered product according to claim 1, which is characterized in that described containing at least one polymerizable
Unsaturated bond monomer, selected from trimethylolpropane trimethacrylate, propoxylation trimethylolpropane trimethacrylate, Ji Wusi
Alcohol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol tetraacrylate, Dipentaerythritol Pentaacrylate, two
Six acrylate of pentaerythrite, polyethyleneglycol diacrylate, polypropyleneglycol diacrylate, bis- propylene of Ethoxylated bisphenol A
Acid esters, propoxylated bisphenol diacrylate, glycerin tripropionate.
5. dry film photoresist layered product according to claim 1, which is characterized in that the photoinitiator is 2,4,5- tri- virtues
The derivative of base imidazoles dimer or 2,4,5- triarylimidazoles dimers.
6. dry film photoresist layered product according to claim 1, which is characterized in that the photoinitiator is by initiator aid
It is mixed according to arbitrary ratio with the derivative of 2,4,5- triarylimidazoles dimer or 2,4,5- triarylimidazoles dimers;Institute
Initiator aid is stated by aromatic ketone, quinone, benzoin compound, benzil derivatives, acridine derivatives, N- phenyl amino second
Acid derivative, coumarin series compounds, one or more in oxazole based compound are according to arbitrary than mixing composition.
7. dry film photoresist layered product according to claim 1, which is characterized in that the additive is by dyestuff, light quality
Agent, plasticizer, pigment, filler, antifoaming agent, fire retardant, stabilizer, levelling agent, stripping accelerating agent, antioxidant, fragrance, imaging
It is one or more according to arbitrary proportioning mixing composition in agent, thermal cross-linking agent.
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CN105511227B (en) * | 2015-12-26 | 2019-08-02 | 杭州福斯特应用材料股份有限公司 | A kind of dry film photoresist and its layered product with good hole masking function |
CN105676593B (en) * | 2016-01-19 | 2019-07-16 | 杭州福斯特应用材料股份有限公司 | A kind of photosensitive dry film of stable storing and preparation method thereof |
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CN114545734B (en) * | 2022-03-09 | 2022-08-12 | 珠海市能动科技光学产业有限公司 | Solder-resisting dry film photoresist, preparation method and application thereof |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63144342A (en) * | 1986-12-09 | 1988-06-16 | Nippon Oil & Fats Co Ltd | Dry film photoresist |
JP2000111726A (en) * | 1998-10-08 | 2000-04-21 | Dainippon Printing Co Ltd | Color filter and its production |
CN1957298A (en) * | 2004-04-06 | 2007-05-02 | 麦克德米德有限公司 | Method of forming a metal pattern on a substrate |
CN101046633A (en) * | 2002-11-08 | 2007-10-03 | 富士胶片株式会社 | Planographic printing plate precursor |
CN101371197A (en) * | 2006-01-25 | 2009-02-18 | 株式会社钟化 | Photosensitive dry film resist, printed wiring board making use of the same, and process for producing printed wiring board |
CN102395635A (en) * | 2009-04-21 | 2012-03-28 | 巴斯夫涂料有限公司 | Multilayer coating, production and use thereof for the adhesion of glass panes |
CN102483588A (en) * | 2009-09-04 | 2012-05-30 | 伊斯曼柯达公司 | Method and apparatus for drying after single-step-processing of lithographic printing plates |
CN102707357A (en) * | 2012-02-29 | 2012-10-03 | 京东方科技集团股份有限公司 | Color filter and manufacturing method thereof |
CN103459048A (en) * | 2011-04-06 | 2013-12-18 | 关西涂料株式会社 | Method for forming multi-layered coating film |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100380722B1 (en) * | 2001-06-12 | 2003-04-18 | 삼성전기주식회사 | Insulating film having improved adhesive strength and board having the insulating film |
JP2011200780A (en) * | 2010-03-25 | 2011-10-13 | Fujifilm Corp | Barrier laminated body, method for manufacturing the same, gas barrier film, and device |
-
2015
- 2015-01-30 CN CN201510050337.8A patent/CN104536266B/en active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63144342A (en) * | 1986-12-09 | 1988-06-16 | Nippon Oil & Fats Co Ltd | Dry film photoresist |
JP2000111726A (en) * | 1998-10-08 | 2000-04-21 | Dainippon Printing Co Ltd | Color filter and its production |
CN101046633A (en) * | 2002-11-08 | 2007-10-03 | 富士胶片株式会社 | Planographic printing plate precursor |
CN1957298A (en) * | 2004-04-06 | 2007-05-02 | 麦克德米德有限公司 | Method of forming a metal pattern on a substrate |
CN101371197A (en) * | 2006-01-25 | 2009-02-18 | 株式会社钟化 | Photosensitive dry film resist, printed wiring board making use of the same, and process for producing printed wiring board |
CN102395635A (en) * | 2009-04-21 | 2012-03-28 | 巴斯夫涂料有限公司 | Multilayer coating, production and use thereof for the adhesion of glass panes |
CN102483588A (en) * | 2009-09-04 | 2012-05-30 | 伊斯曼柯达公司 | Method and apparatus for drying after single-step-processing of lithographic printing plates |
CN103459048A (en) * | 2011-04-06 | 2013-12-18 | 关西涂料株式会社 | Method for forming multi-layered coating film |
CN102707357A (en) * | 2012-02-29 | 2012-10-03 | 京东方科技集团股份有限公司 | Color filter and manufacturing method thereof |
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