CN104535447A - Quartz crystal oscillator sensor with characteristic of selective adsorption modification on metal films - Google Patents

Quartz crystal oscillator sensor with characteristic of selective adsorption modification on metal films Download PDF

Info

Publication number
CN104535447A
CN104535447A CN201410745088.XA CN201410745088A CN104535447A CN 104535447 A CN104535447 A CN 104535447A CN 201410745088 A CN201410745088 A CN 201410745088A CN 104535447 A CN104535447 A CN 104535447A
Authority
CN
China
Prior art keywords
electrode
selective adsorption
wafer
quartz
film layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410745088.XA
Other languages
Chinese (zh)
Inventor
魏强
李薇
许伟泽
刘浩锐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin University
Original Assignee
Tianjin University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin University filed Critical Tianjin University
Priority to CN201410745088.XA priority Critical patent/CN104535447A/en
Publication of CN104535447A publication Critical patent/CN104535447A/en
Pending legal-status Critical Current

Links

Landscapes

  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

The present invention discloses a quartz crystal oscillator sensor with the characteristic of selective adsorption modification on metal films. The quartz crystal oscillator sensor comprises a housing and a wafer base, wherein a quartz wafer is arranged inside the housing, the front surface and the back surface of the quartz wafer are respectively provided with a metal film layer electrode, the metal film layer electrode is connected with an electrode leading-out wire, a selective adsorption film layer is coated on the surface of the metal film layer electrode, the selective adsorption film layer comprises a beta-cyclodextrin film layer with a thickness of 0.2-1 [mu]m, the areas of the selective adsorption film layers positioned on the front surface and the back surface of the quartz wafer are equal, the housing is provided with pores or meshes, and the housing is packaged on the wafer base. According to the present invention, the hydrophobic cavity of the beta-cyclodextrin molecule can wrap organic pollution gases, van der Waals force, hydrophobic interactions, intermolecular matching and other effects are mainly utilized to form the host-guest inclusion complex, and the size difference between the phthalate and the siloxane molecules is utilized so as to achieve the selective adsorption on the spatial pollutant phthalate.

Description

The quartz crystal oscillator sensor of a kind of metal film adsorption selection modification
Technical field
The present invention relates to a kind of space-pollution monitoring device, be specially adapted to the quartz crystal sensor of the selective adsorption function of organic gaseous contamination (mainly phthalate and type siloxane two kinds) under space environment.
Background technology
Pollution is that space environment affects one of rather serious factor to spacecraft, very important problem when being current high reliability, long-life spacecraft.When space-pollution thing can produce material impact to device performances such as spacecraft optical device, thermal control coatings.
Such as, the pollution principal ingredient of space station is organism, when being deposited on when these molecular contaminants on the pollution sensibility components and parts such as the sense optical element of space station, solar cell and thermal control coating, will cause that optical property declines, solar panel exports and declines and thermal control performance degradation.When pollution deposit is in manned capsule, also can has an impact to the health of spacefarer, affect completing of task.Spacecraft is when carrying out vacuum thermal test, the surface that the venting product of Nonmetal materials for satellite is easily deposited on device even enters inside satellite by modes such as " climbing oil ", affect the function of thermal control coating, solar cell piece, time serious, the irremediable losses such as short circuit, low pressure discharge, components and parts burn can be caused.Find after deliberation, venting product mainly phthalate and the type siloxane macromolecule of Nonmetal materials for satellite.Therefore the protection of Spacecrafts contamination is that spacecraft is badly in need of one of major issue solved with controlling.
Because the prerequisite polluting protection and control is monitored pollution, the main quartz crystal microbalance that adopts carries out pollution monitoring as sensor at present, is carried out the change of reactive deposition material amount by the change of measurement quartz wafer oscillation frequency.
Summary of the invention
For organic gaseous contamination (mainly phthalate and type siloxane two kinds), the sensitivity of the selective adsorption of certain class dusty gas is adsorbed in order to improve quartz crystal microbalance, the invention provides a kind of quartz crystal air-sensitive microbalance, by applying the air-sensitive film layer that one deck has selective adsorption function on the surface of microbalance, thus realize the selective adsorption of this balance to phthalate or type siloxane material.
In order to solve the problems of the technologies described above, the quartz crystal oscillator sensor of a kind of metal film adsorption selection modification that the present invention proposes, comprise shell and wafer base, quartz wafer is provided with in described shell, the front and rear surfaces of described quartz wafer is respectively equipped with metallic diaphragm electrode, described metallic diaphragm Electrode connection has electrode outlet line, and the surface of metallic diaphragm electrode is coated with selective adsorption rete, and the beta-schardinger dextrin-thin layer that selective adsorption thin layer is 0.2-1 μm by thickness is formed; The area being positioned at the selective adsorption rete of described quartz wafer front and rear surfaces is identical; Described shell is provided with hole or mesh, and described shell is packaged on described wafer base.
Compared with prior art, the invention has the beneficial effects as follows:
Electrode area surfaces due to the quartz crystal in the present invention is coated with the selective adsorption thin layer be made up of beta-schardinger dextrin-thin layer, in use procedure, utilize beta-schardinger dextrin-molecule hydrophobic cavity can coated organic pollutant, because the size of beta-schardinger dextrin-molecule hydrophobic cavity and phthalate match, therefore, Subjective and Objective inclusion complex (as shown in Figures 2 and 3) can be formed.And type siloxane molecular dimension is greater than the hydrophobic cavity of beta-schardinger dextrin-, can not be wrapped by into.Therefore, utilize the surface modification that this beta-schardinger dextrin-thin layer can realize microbalance, and then reach the object of selective adsorption space-pollution thing-phthalate.
Accompanying drawing explanation
Fig. 1 (a) is quartz crystal sensor package assembly schematic diagram in the present invention;
Fig. 1 (b) is quartz crystal film layer structure schematic diagram in the present invention;
Fig. 1 (c) is a kind of shell mechanism schematic diagram of quartz crystal sensor in the present invention;
Fig. 1 (d) is the another kind of shell mechanism schematic diagram of quartz crystal sensor in the present invention;
Contained phenyl ring dimensional drawing in Fig. 2 phthalate molecule;
Fig. 3 is beta-schardinger dextrin-absorption phthalate schematic diagram;
Fig. 4 is infrared spectrogram after quartz wafer surface coating beta-schardinger dextrin-film.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
The quartz crystal oscillator sensor of a kind of metal film adsorption selection of the present invention modification, comprise shell 9 and wafer base 7, be provided with quartz wafer 1 in described shell 9, the front and rear surfaces of described quartz wafer 1 is respectively equipped with metallic diaphragm electrode 2 and 3, as shown in Fig. 1 (b); Each described metallic diaphragm electrode 2 (with 3) is connected with electrode outlet line 6 respectively, the upper end conductive adhesive of an electrode outlet line 6 is on the right side of quartz wafer 1 front surface metallic diaphragm electrode 3, and the upper end conductive adhesive of another root motor lead-out wire 6 is in the left side of quartz wafer 1 rear surface metallic diaphragm electrode 2; Described wafer base 7 is provided with two electrode fairleads, is provided with insulating sleeve 8 in described electrode fairlead, and the lower end of described electrode outlet line 6 is fixing with on described wafer base 7 through insulating sleeve 8, as shown in Fig. 1 (a).The surface of the metallic diaphragm electrode 2 and 3 in the present invention is coated with selective adsorption rete 4 and 5 respectively, and the beta-schardinger dextrin-thin layer that selective adsorption thin layer 4 and 5 is 0.2-1 μm by thickness is formed; The selective adsorption rete 4 being positioned at described quartz wafer 1 front and rear surfaces is identical with the area of 5; As shown in Fig. 1 (c), described shell 9 is provided with hole or mesh, and described shell 9 is packaged on described wafer base 7.
Embodiment 1: the quartz crystal oscillator sensor of metal film adsorption selection of the present invention modification obtains in accordance with the following methods:
(1) quartz wafer is placed in evaporator, adopts mask method to be coated with metallic diaphragm electrode (2) and (3).According to demand, select gold as electrode film layer material.As required, also can other metal materials of evaporation as electrode.
(2) under 90 DEG C of water bath condition, preparation beta-schardinger dextrin-saturated solution, and adopt magnetic agitation 30min, obtain consoluet beta-schardinger dextrin-aqueous solution.Adopt spin-coating method at electrode zone coating beta-schardinger dextrin-rete, absorb above-mentioned beta-schardinger dextrin-aqueous solution with suction pipe, and drop in quartz crystal electrode zone, liquid droping speed is 1ml/min.Above-mentioned quartz crystal level put into close drying device, and natural cool drying can be formed with beta-schardinger dextrin-thin layer (4) and (5) of 0.5 μm on the surface of quartz crystal electrode zone.
As shown in Figure 4, can be found out by infrared spectrum: after electrode area surfaces coating beta-schardinger dextrin-aqueous solution, 3100cm -1locate hydroxyl in corresponding beta-schardinger dextrin-structure.At 3000cm -1(2919.25cm below -1and 2850.63cm -1) two peaks have appearred in place, this is the stretching vibration of c h bond in beta-schardinger dextrin-, 1080.03cm -1for the stretching vibration of C-O-C, 805.24cm -1, 567.07cm -1, 472.58cm -1it is the cyclodextrin skeleton vibration comprising α-Isosorbide-5-Nitrae.Therefore, infrared spectrum shows, beta-schardinger dextrin-successful application on quartz crystal.
The quartz crystal with beta-schardinger dextrin-film is used in quartz crystal air-sensitive microbalance, utilize the surface modification that this beta-schardinger dextrin-thin layer can realize microbalance, and then reach the object of selective adsorption space-pollution thing-phthalate.
Before and after quartz wafer, metal film electrode region coating selective adsorption rete (4) is identical with (5) area; Lead-in wire upper end conductive adhesive is on wafer front metal film electrode (2) right side, and on the left of rear surface metal film electrode (3), lead-in wire lower end is fixed on wafer base through insulating sleeve (8); There is hole or net casing (9) is packaged on wafer base (7).Shell (9) plays shielding and the effect through organic gas.
Embodiment 2: the quartz crystal oscillator sensor of metal film adsorption selection of the present invention modification obtains in accordance with the following methods:
(1) quartz wafer is placed in evaporator, adopts mask method to be coated with metallic diaphragm electrode (2) and (3).According to demand, select silver as electrode film layer material.
(2) under 70 DEG C of water bath condition, preparation beta-schardinger dextrin-saturated solution, and adopt magnetic agitation 30min, obtain consoluet beta-schardinger dextrin-aqueous solution.Adopt dip-coating method at electrode zone coating beta-schardinger dextrin-rete, draw speed-raising degree to be 1.5cm/min.Above-mentioned quartz crystal level put into close drying device, and natural cool drying can be formed with beta-schardinger dextrin-thin layer (4) and (5) of 1 μm on the surface of quartz crystal electrode zone.
Before and after quartz wafer, metal film electrode region coating selective adsorption rete (4) is identical with (5) area; Lead-in wire upper end conductive adhesive is on wafer front metal film electrode (2) right side, and on the left of rear surface metal film electrode (3), lead-in wire lower end is fixed on wafer base through insulating sleeve (8); There is hole or net casing (9) is packaged on wafer base (7).Shell (9) plays shielding and the effect through organic gas.
The present invention mainly pollutes organic molecule by forming phthalate and type siloxane two class in beta-schardinger dextrin-film realization effective difference Spacecrafts contamination environment at quartz crystal electrode area surfaces.Utilize beta-schardinger dextrin-molecule hydrophobic cavity can coated organic pollutant, the effect such as main dependence Van der Waals force, hydrophobic effect, intermolecular coupling forms the advantage of Subjective and Objective inclusion complex, and phthalate and type siloxane molecular dimension difference, realize the object to space-pollution thing-phthalate selective adsorption.
Although invention has been described for composition graphs above; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; instead of it is restrictive; those of ordinary skill in the art is under enlightenment of the present invention; when not departing from present inventive concept, can also make a lot of distortion, these all belong within protection of the present invention.

Claims (2)

1. the quartz crystal oscillator sensor of metal film adsorption selection modification, comprise shell (9) and wafer base (7), quartz wafer (1) is provided with in described shell (9), the front and rear surfaces of described quartz wafer (1) is respectively equipped with metallic diaphragm electrode, described metallic diaphragm Electrode connection has electrode outlet line (6), it is characterized in that
The surface of metallic diaphragm electrode is coated with selective adsorption rete (4), and the beta-schardinger dextrin-thin layer that selective adsorption thin layer is 0.2-1 μm by thickness is formed; The area being positioned at the selective adsorption rete of described quartz wafer (1) front and rear surfaces is identical; Described shell (9) is provided with hole or mesh, and described shell (9) is packaged on described wafer base (7).
2. the quartz crystal oscillator sensor of a kind of metal film adsorption selection modification according to claim 1, it is characterized in that, the upper end conductive adhesive of an electrode outlet line is on the right side of quartz wafer (1) front surface metallic diaphragm electrode, and the upper end conductive adhesive of another root motor lead-out wire is in the left side of quartz wafer (1) rear surface metallic diaphragm electrode; Described wafer base (7) is provided with electrode fairlead, be provided with insulating sleeve (8) in described electrode fairlead, the lower end of described electrode outlet line is fixing with on described wafer base (7) through insulating sleeve (8).
CN201410745088.XA 2014-12-08 2014-12-08 Quartz crystal oscillator sensor with characteristic of selective adsorption modification on metal films Pending CN104535447A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410745088.XA CN104535447A (en) 2014-12-08 2014-12-08 Quartz crystal oscillator sensor with characteristic of selective adsorption modification on metal films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410745088.XA CN104535447A (en) 2014-12-08 2014-12-08 Quartz crystal oscillator sensor with characteristic of selective adsorption modification on metal films

Publications (1)

Publication Number Publication Date
CN104535447A true CN104535447A (en) 2015-04-22

Family

ID=52851021

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410745088.XA Pending CN104535447A (en) 2014-12-08 2014-12-08 Quartz crystal oscillator sensor with characteristic of selective adsorption modification on metal films

Country Status (1)

Country Link
CN (1) CN104535447A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5418058A (en) * 1993-10-04 1995-05-23 The Regents Of The University Of California Chemical microsensors
CN2475225Y (en) * 2001-03-28 2002-01-30 张笑阳 Quartz crystal for special metal film electrode
JP2004177258A (en) * 2002-11-27 2004-06-24 Kanagawa Prefecture Detection sensor
CN202197255U (en) * 2011-07-29 2012-04-18 广东惠伦晶体科技股份有限公司 Quartz crystal
CN204302142U (en) * 2014-12-08 2015-04-29 天津大学 A kind of sensor construction with selective absorption QCM

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5418058A (en) * 1993-10-04 1995-05-23 The Regents Of The University Of California Chemical microsensors
CN2475225Y (en) * 2001-03-28 2002-01-30 张笑阳 Quartz crystal for special metal film electrode
JP2004177258A (en) * 2002-11-27 2004-06-24 Kanagawa Prefecture Detection sensor
CN202197255U (en) * 2011-07-29 2012-04-18 广东惠伦晶体科技股份有限公司 Quartz crystal
CN204302142U (en) * 2014-12-08 2015-04-29 天津大学 A kind of sensor construction with selective absorption QCM

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JIUN-FENG JU等: "Preparation and identification of β-cyclodextrin polymer thin film for quartz crystal microbalance sensing of benzene, toluene, and p-xylene", 《SENSORS AND ACTUATORS B》 *
司士辉等: "基于β -环糊精/TiO2 纳米粒多孔敏感膜的压电石英微天平有机气体传感器", 《贵州工业大学学报 自然科学版》 *
邓小娟等: "石英晶体微天平在手性识别中的应用", 《分析测试学报》 *

Similar Documents

Publication Publication Date Title
CN204302142U (en) A kind of sensor construction with selective absorption QCM
US10001448B2 (en) Gas sensor
KR20100087315A (en) Organic chemical sensor comprising plasma-deposited microporous layer, and method of making and using
Marcu et al. Laser-grown ZnO nanowires for room-temperature SAW-sensor applications
EP2681541B1 (en) Moisture sensor including, as a moisture-absorbing layer, a polymer layer including a mixture of polyamides
CN102437207B (en) A kind of Graphene electrodes, Preparation Method And The Use
CN104465622B (en) Detect the method and encapsulating structure of backboard water oxygen transmitance
CN103834918A (en) Preparation method of nano coating whole machine waterproof
CN104075811A (en) THz detection structure and manufacturing method of high-TCR absorption sensitive composite film
Songkeaw et al. Transparent and flexible humidity sensor based on graphene oxide thin films prepared by electrostatic spray deposition technique
CN111457833A (en) Flexible bending sensor based on three-dimensional electrode structure and processing method
KR20180051236A (en) Method for preparing super-hydrophobic coating solution to impart waterproof and dustproof to electronic device and electronic parts
CN106680325A (en) Grapheme atomic oxygen detection probe and preparation method thereof
Baek et al. Output power enhancement from ZnO nanorods piezoelectric nanogenerators by Si microhole arrays
CN104535447A (en) Quartz crystal oscillator sensor with characteristic of selective adsorption modification on metal films
CN111026177A (en) System and method for controlling humidity in alkali metal air chamber
ur Rehman et al. Investigating sensing properties of poly-(dioctylfluorene) based planar sensor
Ahmad et al. Integrated capacitive and resistive humidity transduction via surface type nickel phthalocyanine based sensor
Karimov et al. Resistive humidity sensor based on vanadium complex films
Echabaane et al. Electrical and electrochemical properties of the MEH–PPV and MEH–PPV doped calix [4] arene derivative layers for the detection of Cu2+ and Na+ ions
CN108918353B (en) Method for qualitatively detecting particulate matter in atmospheric environment
CN115343335A (en) Nano particle assembly material gas sensor for enhancing moisture resistance and preparation method thereof
CN104195509B (en) The manufacture method of metal film electrode based on ITO heating plate
CN114112184A (en) Surface bending mode double-coupling single-chip type high-sensitivity quartz tuning fork vacuum sensor
KR101355371B1 (en) Quartz Crystal Microbalance Sensors for Simultaneously Measurement of Electrical Properties and Mass Changes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20150422