CN104518155A - Organic light emitting diode device and preparation method thereof - Google Patents

Abstract

The invention provides an organic light emitting diode device. The organic light emitting diode device includes a transparent electric conduction anode substrate as well as a light-emitting functional layer and a cathode which are sequentially stacked on the transparent electric conduction anode substrate, wherein the cathode includes a cathode layer and a second cathode layer which are stacked sequentially; and the first cathode layer comprises a metal oxide layer, an alloy layer and an electric conduction oxide thin film layer which are stacked sequentially, wherein the metal oxide layer is made of at least two kinds of materials selected from Nb2O5, V2O5 and Ta2O5, and the alloy layer is made of magnesium-silver alloy or lithium-aluminum alloy; and the second cathode layer comprises a plurality of strip-shaped metal layers which are arranged on the electric conduction oxide thin film layer at intervals, wherein the metal layers is made of Al, Ag, Au, Cu, Ca or Ba. The organic light emitting diode device can be adopted as a transparent product when not being lit; and when the organic light emitting diode device works normally, the light extraction contrast of the anode and cathode is (50 to 60):1. The invention also provides a preparation method of the organic light emitting diode device.

Description

A kind of organic electroluminescence device and preparation method thereof

Technical field

The present invention relates to organic electroluminescence device, be specifically related to a kind of organic electroluminescence device and preparation method thereof.

Background technology

Organic electroluminescent (Organic Light Emission Diode), hereinafter referred to as OLED, there is the characteristics such as brightness is high, material selection range is wide, driving voltage is low, all solidstate active illuminating, have high definition, wide viewing angle simultaneously, and the advantage such as fast response time, be a kind of Display Technique and light source of great potential, meet the development trend of information age mobile communication and information displaying, and the requirement of green lighting technique, be the focal point of current lot of domestic and foreign researcher.

Transparent organic electroluminescent device (TOLED) is the one of OLED, and when powering up, anode and negative electrode two sides all can utilizing emitted lights for it, and become the characteristic of transparence when not powering up, and open a special applications direction in display field.But in some practical application, need organic electroluminescence devices becomes transparence characteristic when not powering up, and two sides all high-efficiency bight-dippings are not needed when powering up, anode and negative electrode bright dipping keep suitable contrast, under such circumstances, the transparent organic electroluminescent device of existing two sides high-efficiency bight-dipping will cause larger light loss.

Summary of the invention

In view of this, the invention provides a kind of organic electroluminescence device and preparation method thereof.By preparing the negative electrode of composite construction, and the second cathode layer being arranged to striped stride distribution, finally acquired and not can be used as opaque products when lighting, and anode and negative electrode going out the organic electroluminescence device that optical contrast ratio is 50 ~ 60:1 when normal work.

On the one hand, the invention provides a kind of organic electroluminescence device, comprise transparent conductive anode substrate and be cascading light emitting functional layer on described transparent conductive anode substrate and negative electrode, described negative electrode comprises be cascading the first cathode layer in described light emitting functional layer and the second cathode layer;

Described first cathode layer comprises the metal oxide layer be cascading in described light emitting functional layer, alloy-layer and conductive oxide film layer; The material of described metal oxide layer is Nb ₂o ₅, V ₂o ₅and Ta ₂o ₅in at least two kinds, the material of described alloy-layer is magnesium-silver alloy or lithium-aluminium alloy, and the material of described conductive oxide film layer is indium tin oxide, aluminium zinc oxide or indium-zinc oxide;

Described second cathode layer comprises multiple metal level be arranged in striped stride on described conductive oxide film layer, and the material of described metal level is Al, Ag, Au, Cu, Ca or Ba.

Negative electrode is arranged to above-mentioned composite construction by organic electroluminescence device of the present invention, device transparent shape when not lighting can be made, be that striped stride is arranged on conductive oxide film layer by metal level, when device is lighted, the part light outgoing of cathode plane can be made, and another part light is reflected back toward device inside, thus reduce unnecessary light loss, obtain suitable anode cathode and go out optical contrast ratio.Arranging of metal oxide layer, alloy-layer and conductive oxide film layer can increase electron injection, wherein, and the Nb of metal oxide layer ₂o ₅, V ₂o ₅and Ta ₂o ₅there is scattering process, therefore metal oxide layer can be used as inscattering layer strengthen light extraction efficiency, the magnesium-silver alloy of alloy-layer or lithium-aluminium alloy work content low, chemical stability is good, can improve electron injection ability; Phase local area High-Field can be formed between conductive oxide film layer with cathode metal layer, add the electron tunneling of metal level to organic luminescence function layer.Organic electroluminescence device anode surface of the present invention adopts and exceeds finish matter, and cathode plane light emission rate is relatively poor, transparent first cathode layer of cathode plane determines out optical contrast ratio to the transmission of light and opaque second cathode layer jointly to the reflection of light and arranging of relevant parameter.When normal work, anode and negative electrode go out optical contrast ratio to organic electroluminescence device of the present invention is 50 ~ 60:1.

Preferably, the width of described metal level is 100 μm ~ 150 μm, and the distance between adjacent two described metal levels is 100 μm ~ 150 μm.

Preferably, the thickness of described metal oxide layer is 30nm ~ 50nm.

Preferably, described Nb ₂o ₅, V ₂o ₅and Ta ₂o ₅mole dosage in metal oxide layer is equal.

Preferably, the thickness of described alloy-layer is 10nm ~ 20nm.

Preferably, the magnesium of described magnesium-silver alloy, silver-colored mass ratio are 8 ~ 13:1, and in described lithium-aluminium alloy, the mass fraction of lithium is 0.5 ~ 1%.More preferably, the magnesium of described magnesium-silver alloy, silver-colored mass ratio are 10:1, described lithium _-in aluminium alloy, the mass fraction of lithium is 0.6%.

Preferably, the thickness of described conductive oxide film layer is 20nm ~ 40nm.

Preferably, the thickness of described metal level is 100nm ~ 200nm.

Preferably, described transparent conductive anode substrate is ito glass substrate, AZO glass substrate or IZO glass substrate.

Preferably, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that are cascading on described transparent conductive anode substrate.

Preferably, the material of described hole injection layer comprises hole mobile material and is entrained in the hole-injecting material in described hole mobile material, and the doping mass fraction of described hole-injecting material is 25% ~ 35%; Described hole-injecting material is MoO ₃, WO ₃, V ₂o ₅and ReO ₃in at least one, described hole mobile material is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] one in cyclohexane (TAPC), the thickness of hole injection layer is 10nm ~ 15nm.

Preferably, the material of described hole transmission layer is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] one in cyclohexane (TAPC), thickness is 30 ~ 50nm.

Preferably, the material of described luminescent layer comprises green glow material of main part and green glow guest materials, and the doping mass fraction of described green glow guest materials is 2% ~ 10%, and the thickness of luminescent layer is 10nm ~ 30nm.

Preferably, described green glow material of main part is 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 9,9'-(1,3-phenyl) two-9H-carbazoles (mCP), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC) or two (1-naphthyl) anthracene (ADN) of 9,10-; Described green glow guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy) ₃), acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy) ₂(acac)) or three [2-(p-methylphenyl) pyridines] close iridium (Ir (mppy) ₃).

Preferably, the material of described electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ) and 1,3, one in 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), thickness is 10nm ~ 60nm.

Preferably, the material of described electron injecting layer comprises electron transport material and is entrained in the alkali metal sulfates in described electron transport material, and lithium salts or cesium salt, the doping mass fraction of described alkali metal sulfates is 6% ~ 25%, and the doping mass fraction of described lithium salts or cesium salt is 25% ~ 35%; Described alkali metal sulfates is Li ₂sO ₄, Na ₂sO ₄, K ₂sO ₄, Rb ₂sO ₄and Cs ₂sO ₄in any one, described lithium salts is LiF, LiN ₃and Li ₃any one in N, described cesium salt is CsF, CsN ₃, Cs ₃any one in N, described electron transport material is 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, the one in 2,4-triazole (TAZ) and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI); The thickness of described electron injecting layer is 15nm ~ 45nm.

On the other hand, the invention provides a kind of preparation method of organic electroluminescence device, comprise the following steps:

Adopt the mode of vacuum evaporation to prepare light emitting functional layer on transparent conductive anode substrate, vacuum degree is 1 × 10 ^-5~ 1 × 10 ^-3pa;

Prepare negative electrode on described light emitting functional layer surface again, obtain organic electroluminescence device; Described negative electrode comprises the first cathode layer and the second cathode layer; Described first cathode layer comprises metal oxide layer, alloy-layer and conductive oxide film layer; Described second cathode layer comprises multiple metal level be arranged in striped stride on described conductive oxide film layer; Particularly:

The mode of magnetron sputtering is first adopted to prepare metal oxide layer in described light emitting functional layer; Then adopt the mode of vacuum evaporation to prepare alloy-layer on described metal oxide layer, vacuum degree is 1 × 10 ^-5pa ~ 1 × 10 ^-3pa, evaporation rate the mode of magnetron sputtering is adopted to prepare conductive oxide film layer again on described alloy-layer; Background vacuum in above-mentioned magnetron sputtering process is 1 × 10 ^-5~ 1 × 10 ^-3pa, accelerating voltage is 300 ~ 800V, and magnetic field is 50 ~ 200G, and power density is 10 ~ 40W/cm ²; The material of described metal oxide layer is Nb ₂o ₅, V ₂o ₅and Ta ₂o ₅in at least two kinds, the material of described alloy-layer is magnesium-silver alloy or lithium-aluminium alloy, and the material of described conductive oxide film layer is indium tin oxide, aluminium zinc oxide or indium-zinc oxide;

One mask plate is finally provided, described mask plate is covered described conductive oxide film layer surface, then adopt the mode of vacuum evaporation at the not capped multiple metal level arranged in striped stride of described conductive oxide film layer surface preparation, vacuum degree is 1 × 10 ^-5pa ~ 1 × 10 ^-3pa, evaporation rate the material of described metal level is Al, Ag, Au, Cu, Ca or Ba.

Preferably, the width of described metal level is 100 μm ~ 150 μm, and the distance between adjacent two described metal levels is 100 μm ~ 150 μm.

Preferably, the thickness of described metal oxide layer is 30nm ~ 50nm.

Preferably, described Nb ₂o ₅, V ₂o ₅and Ta ₂o ₅mole dosage in metal oxide layer is equal.

Preferably, the thickness of described alloy-layer is 10nm ~ 20nm.

Preferably, the magnesium of described magnesium-silver alloy, silver-colored mass ratio are 8 ~ 13:1, and in described lithium-aluminium alloy, the mass fraction of lithium is 0.5 ~ 1%.More preferably, the magnesium of described magnesium-silver alloy, silver-colored mass ratio are 10:1, and in described lithium-aluminium alloy, the mass fraction of lithium is 0.6%.

Preferably, the thickness of described conductive oxide film layer is 20nm ~ 40nm.

Preferably, the thickness of described metal level is 100nm ~ 200nm.

Preferably, described transparent conductive anode substrate is ito glass substrate, AZO glass substrate or IZO glass substrate.

Preferably, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that are cascading on described transparent conductive anode substrate.

Preferably, the material of described hole injection layer comprises hole mobile material and is entrained in the hole-injecting material in described hole mobile material, and the doping mass fraction of described hole-injecting material is 25% ~ 35%; Described hole-injecting material is MoO ₃, WO ₃, V ₂o ₅and ReO ₃in at least one, described hole mobile material is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD) and 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] one in cyclohexane (TAPC), the thickness of hole injection layer is 10nm ~ 15nm.In preparation process, vacuum degree is 1 × 10 ^-5pa ~ 1 × 10 ^-3pa, evaporation rate

Preferably, the material of described hole transmission layer is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] one in cyclohexane (TAPC), thickness is 30 ~ 50nm.In preparation process, vacuum degree is 1 × 10 ^-5pa ~ 1 × 10 ^-3pa, evaporation rate

Preferably, the material of described luminescent layer comprises green glow material of main part and green glow guest materials, and the doping mass fraction of described green glow guest materials is 2% ~ 10%, and the thickness of luminescent layer is 10nm ~ 30nm; In preparation process, vacuum degree is 1 × 10 ^-5pa ~ 1 × 10 ^-3pa, evaporation rate

Preferably, described green glow material of main part is 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA), 9,9'-(1,3-phenyl) two-9H-carbazoles (mCP), 4,4'-bis-(9-carbazole) biphenyl (CBP), N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine (TPD), 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC) or two (1-naphthyl) anthracene (ADN) of 9,10-; Described green glow guest materials is that three (2-phenylpyridines) close iridium (Ir (ppy) ₃), acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy) ₂(acac)) or three [2-(p-methylphenyl) pyridines] close iridium (Ir (mppy) ₃).

Preferably, the material of described electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ) and 1,3, one in 5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), thickness is 10nm ~ 60nm; In preparation process, vacuum degree is 1 × 10 ^-5pa ~ 1 × 10 ^-3pa, evaporation rate

Preferably, the material of described electron injecting layer comprises electron transport material and is entrained in the alkali metal sulfates in described electron transport material, and lithium salts or cesium salt, the doping mass fraction of described alkali metal sulfates is 6% ~ 25%, and the doping mass fraction of described lithium salts or cesium salt is 25% ~ 35%; Described alkali metal sulfates is Li ₂sO ₄, Na ₂sO ₄, K ₂sO ₄, Rb ₂sO ₄and Cs ₂sO ₄in any one, described lithium salts is LiF, LiN ₃and Li ₃any one in N, described cesium salt is CsF, CsN ₃and Cs ₃any one in N, described electron transport material is 4,7-diphenyl-1,10-phenanthroline (Bphen), 4,7-diphenyl-1,10-Phen (BCP), 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium (BAlq), oxine aluminium (Alq ₃), 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, the one in 2,4-triazole (TAZ) and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI); The thickness of described electron injecting layer is 15nm ~ 45nm; In preparation process, vacuum degree is 1 × 10 ^-5pa ~ 1 × 10 ^-3pa, evaporation rate

The invention provides a kind of organic electroluminescence device and preparation method thereof and there is following beneficial effect:

(1) organic electroluminescence device provided by the invention, negative electrode is composite construction, comprises the first cathode layer and the second cathode layer, and the first cathode layer comprises metal oxide layer, alloy-layer and conductive oxide film layer; Second cathode layer comprises multiple metal level arranged in striped stride, this device can as opaque products when not lighting, and when normal work be the light loss that the metal level of striped stride setting effectively can reduce negative electrode exiting surface, it is 50 ~ 60:1 that anode and negative electrode go out optical contrast ratio;

(2) preparation technology of organic electroluminescence device of the present invention is simple, and easy large area preparation, is suitable for industrialization and uses on a large scale.

Accompanying drawing explanation

Fig. 1 is the structural representation of the organic electroluminescence device that the embodiment of the present invention 1 obtains;

Fig. 2 be the metal level of the embodiment of the present invention 1 organic electroluminescence device schematic diagram is set.

Embodiment

Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.

Embodiment 1

A preparation method for organic electroluminescence device, comprises the following steps:

(1) transparent ito glass substrate is carried out successively liquid detergent cleaning, washed with de-ionized water, acetone cleaning, ethanol purge, all clean with supersonic wave cleaning machine, each washing 5 minutes, repeats 3 times respectively, and then by oven for drying; And surface activation process is carried out to the ito glass after cleaning, to increase the oxygen content on ITO surface, improve the work function on ITO surface; ITO thickness 150nm;

(2) adopt the mode of vacuum thermal resistance evaporation in ito glass substrate surface preparation light emitting functional layer, comprise hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively; Particularly:

The preparation of hole injection layer: by MoO ₃be doped into N, as hole injection layer material in N '-diphenyl-N, N '-two (1-naphthyl)-1,1 '-biphenyl-4,4 '-diamines (NPB), MoO ₃doping mass fraction be 30%, the thickness of hole injection layer is 12.5nm, vacuum degree 1 × 10 ^-5pa, evaporation rate

The preparation of hole transmission layer: adopt N, N '-diphenyl-N, N '-two (1-naphthyl)-1,1 '-biphenyl-4,4 '-diamines (NPB), thickness is 40nm, and vacuum degree is 1 × 10 ^-5pa, evaporation rate is

The preparation of luminescent layer: adopt 4,4 ', 4 ' '-three (carbazole-9-base) triphenylamine (TCTA) to be material of main part; Three (2-phenylpyridines) are adopted to close iridium (Ir (ppy) ₃) be green glow guest materials, Ir (ppy) ₃doping mass fraction is 6%, thickness 20nm; Vacuum degree is 1 × 10 ^-5pa, evaporation rate is

The preparation of electron transfer layer: adopt electron transport material 4,7-diphenyl-1,10-phenanthroline (Bphen), vacuum degree 1 × 10 ^-5pa, evaporation rate evaporation thickness 35nm;

The preparation of electron injecting layer: adopt LiF and Li ₂sO ₄be doped to the composite material formed in electron transport material 4,7-diphenyl-1,10-phenanthroline (Bphen), Li ₂sO ₄doping mass fraction is 15%, LiF doping mass fraction is 30%, and evaporation thickness is 35nm, and vacuum degree is 1 × 10 ^-5pa, evaporation rate is

(3) on electron injecting layer, prepare negative electrode, obtain organic electroluminescence device; Negative electrode comprises the first cathode layer and the second cathode layer that stack gradually; First cathode layer comprises metal oxide layer, alloy-layer and conductive oxide film layer; Second cathode layer comprises multiple metal level be arranged in striped stride on conductive oxide film layer;

Particularly: first adopt the mode of magnetron sputtering to prepare metal oxide layer on electron injecting layer, material is Nb ₂o ₅and V ₂o ₅with the composite material that mol ratio 1:1 is formed, thickness is 40nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-4pa, accelerating voltage is 300V, and magnetic field is 50G, and power density is 10W/cm ²;

Then adopt the mode of vacuum evaporation to prepare alloy-layer on metal oxide layer, material is Mg:Ag(mass ratio 10:1) alloy, thickness is 15nm, and vacuum degree is 1 × 10 ^-4pa, evaporation rate

Adopt the mode of magnetron sputtering to prepare conductive oxide film layer over the alloyed layer again, material is IZO, thickness 30nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-4pa, accelerating voltage is 300V, and magnetic field is 50G, and power density is 10W/cm ²;

One mask plate is finally provided, mask plate is covered conductive oxide film layer surface, then adopt the mode of vacuum evaporation at the multiple metal level arranged in striped stride of not capped conductive oxide film layer surface preparation, material is Al, thickness is 200nm, metal layer width is 100 μm, and the spacing of adjacent two metal levels is 100 μm, and the vacuum degree of Vacuum Evaporation Process is 1 × 10 ^-5pa, evaporation rate

Fig. 1 is the structural representation of the organic electroluminescence device that the embodiment of the present invention 1 obtains.As shown in Figure 1, the present embodiment organic electroluminescence device, comprises transparent conductive anode substrate 10, light emitting functional layer 20 and negative electrode 30 successively.Described negative electrode 30 comprises the first cathode layer 31 and the second cathode layer 32, the alloy-layer 312 that first cathode layer 31 comprises metal oxide layer 311 that a layer thickness is 40nm, a layer thickness is 15nm and a layer thickness are conductive oxide film layer 313, second cathode layer 32 thickness of 30nm is 200nm.

Fig. 2 be the metal level of the embodiment of the present invention 1 organic electroluminescence device schematic diagram is set.Second cathode layer 32 comprises multiple metal level 321 be arranged in striped stride on the first cathode layer 31, and the width of metal level 321 is 100 μm, and the spacing of adjacent two metal levels is 100 μm.

Embodiment 2

A preparation method for organic electroluminescence device, comprises the following steps:

(1) transparent ito glass substrate is carried out successively liquid detergent cleaning, washed with de-ionized water, acetone cleaning, ethanol purge, all clean with supersonic wave cleaning machine, each washing 5 minutes, repeats 3 times respectively, and then by oven for drying; And surface activation process is carried out to the ito glass after cleaning, to increase the oxygen content on ITO surface, improve the work function on ITO surface; ITO thickness 120nm;

(2) adopt the mode of vacuum thermal resistance evaporation in ito glass substrate surface preparation light emitting functional layer, comprise hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively; Particularly:

The preparation of hole injection layer: by WO ₃as hole injection layer material in '-three (carbazole-9-base) triphenylamine (TCTA) that is doped into 4,4 ', 4 ', WO ₃doping mass fraction be 25%, the thickness of hole injection layer is 10nm, vacuum degree 5 × 10 ^-5pa, evaporation rate

The preparation of hole transmission layer: adopt 4,4 ', 4 ' '-three (carbazole-9-base) triphenylamine (TCTA), thickness is 30nm, and vacuum degree is 5 × 10 ^-5pa, evaporation rate is

The preparation of luminescent layer: adopt 9,9 '-(1,3-phenyl) two-9H-carbazole (mCP) to be material of main part; Adopt acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy) ₂(acac)) be green glow guest materials, Ir (ppy) ₂(acac) mass fraction that adulterates is 2%, thickness 10nm; Vacuum degree is 5 × 10 ^-5pa, evaporation rate is

The preparation of electron transfer layer: adopt electron transport material 4,7-diphenyl-1,10-Phen (BCP), vacuum degree 5 × 10 ^-5pa, evaporation rate evaporation thickness 10nm;

The preparation of electron injecting layer: adopt LiN ₃and Na ₂sO ₄be doped to the composite material formed in electron transport material 4,7-diphenyl-1,10-Phen (BCP), Na ₂sO ₄doping mass fraction is 25%, LiN ₃doping mass fraction is 25%, and evaporation thickness is 45nm, and vacuum degree is 5 × 10 ^-5pa, evaporation rate is

(3) on electron injecting layer, prepare negative electrode, obtain organic electroluminescence device; Negative electrode comprises the first cathode layer and the second cathode layer that stack gradually; First cathode layer comprises metal oxide layer, alloy-layer and conductive oxide film layer; Second cathode layer comprises multiple metal level be arranged in striped stride on conductive oxide film layer;

Particularly: first adopt the mode of magnetron sputtering to prepare metal oxide layer on electron injecting layer, material is Ta ₂o ₅and V ₂o ₅with the composite material that mol ratio 1:1 is formed, thickness is 30nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-5pa, accelerating voltage is 800V, and magnetic field is 200G, and power density is 40W/cm ²;

Then adopt the mode of vacuum evaporation to prepare alloy-layer on metal oxide layer, material is Mg:Ag(mass ratio 10:1) alloy, thickness is 20nm, and vacuum degree is 1 × 10 ^-5pa, evaporation rate

Adopt the mode of magnetron sputtering to prepare conductive oxide film layer over the alloyed layer again, material is ITO, thickness 20nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-5pa, accelerating voltage is 800V, and magnetic field is 200G, and power density is 40W/cm ²;

One mask plate is finally provided, mask plate is covered conductive oxide film layer surface, then adopt the mode of vacuum evaporation at the multiple metal level arranged in striped stride of not capped conductive oxide film layer surface preparation, material is Ag, thickness is 120nm, metal layer width is 120 μm, and the spacing of adjacent two metal levels is 120 μm, and the vacuum degree of Vacuum Evaporation Process is 1 × 10 ^-5pa, evaporation rate

Embodiment 3

A preparation method for organic electroluminescence device, comprises the following steps:

(1) transparent ito glass substrate is carried out successively liquid detergent cleaning, washed with de-ionized water, acetone cleaning, ethanol purge, all clean with supersonic wave cleaning machine, each washing 5 minutes, repeats 3 times respectively, and then by oven for drying; And surface activation process is carried out to the ito glass after cleaning, to increase the oxygen content on ITO surface, improve the work function on ITO surface; ITO thickness 100nm;

(2) adopt the mode of vacuum thermal resistance evaporation in ito glass substrate surface preparation light emitting functional layer, comprise hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively; Particularly:

The preparation of hole injection layer: by V ₂o ₅be doped into 4, as hole injection layer material in 4 '-two (9-carbazole) biphenyl (CBP), V ₂o ₅doping mass fraction be 35%, the thickness of hole injection layer is 15nm, vacuum degree 5 × 10 ^-5pa, evaporation rate

The preparation of hole transmission layer: adopt 4,4 '-two (9-carbazole) biphenyl (CBP), thickness is 50nm, and vacuum degree is 5 × 10 ^-5pa, evaporation rate is

The preparation of luminescent layer: adopt 4,4 '-two (9-carbazole) biphenyl (CBP) to be material of main part; Three [2-(p-methylphenyl) pyridines] are adopted to close iridium (Ir (mppy) ₃) be green glow guest materials, Ir (mppy) ₃doping mass fraction is 10%, thickness 30nm; Vacuum degree is 5 × 10 ^-5pa, evaporation rate is

The preparation of electron transfer layer: adopt electron transport material 4-biphenyl phenolic group-two (2-methyl-oxine) to close aluminium (Balq), vacuum degree 5 × 10 ^-5pa, evaporation rate evaporation thickness 60nm;

The preparation of electron injecting layer: adopt Li ₃n and K ₂sO ₄be doped to electron transport material 4-biphenyl phenolic group-two (2-methyl-oxine) and close the composite material formed in aluminium (Balq), K ₂sO ₄doping mass fraction is 6%, Li ₃n doping mass fraction is 35%, and evaporation thickness is 15nm, and vacuum degree is 5 × 10 ^-5pa, evaporation rate is

(3) on electron injecting layer, prepare negative electrode, obtain organic electroluminescence device; Negative electrode comprises the first cathode layer and the second cathode layer that stack gradually; First cathode layer comprises metal oxide layer, alloy-layer and conductive oxide film layer; Second cathode layer comprises multiple metal level be arranged in striped stride on conductive oxide film layer;

Particularly: first adopt the mode of magnetron sputtering to prepare metal oxide layer on electron injecting layer, material is Nb ₂o ₅, Ta ₂o ₅with the composite material that mol ratio 1:1 is formed, thickness is 50nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-3pa, accelerating voltage is 600V, and magnetic field is 100G, and power density is 20W/cm ²;

Then adopt the mode of vacuum evaporation to prepare alloy-layer on metal oxide layer, material is the mass fraction 0.6% of Li-Al(Li) alloy, thickness is 10nm, and vacuum degree is 1 × 10 ^-3pa, evaporation rate

Adopt the mode of magnetron sputtering to prepare conductive oxide film layer over the alloyed layer again, material is AZO, thickness 40nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-3pa, accelerating voltage is 600V, and magnetic field is 100G, and power density is 20W/cm ²;

One mask plate is finally provided, mask plate is covered conductive oxide film layer surface, then adopt the mode of vacuum evaporation at the multiple metal level arranged in striped stride of not capped conductive oxide film layer surface preparation, material is Au, thickness is 150nm, metal layer width is 150 μm, and the spacing of adjacent two metal levels is 150 μm, and the vacuum degree of Vacuum Evaporation Process is 1 × 10 ^-4pa, evaporation rate

Embodiment 4

A preparation method for organic electroluminescence device, comprises the following steps:

(1) transparent ito glass substrate is carried out successively liquid detergent cleaning, washed with de-ionized water, acetone cleaning, ethanol purge, all clean with supersonic wave cleaning machine, each washing 5 minutes, repeats 3 times respectively, and then by oven for drying; And surface activation process is carried out to the ito glass after cleaning, to increase the oxygen content on ITO surface, improve the work function on ITO surface; ITO thickness 100nm;

(2) adopt the mode of vacuum thermal resistance evaporation in ito glass substrate surface preparation light emitting functional layer, comprise hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively; Particularly:

The preparation of hole injection layer: by ReO ₃be doped into N, N '-two (3-aminomethyl phenyl)-N, N ' in-diphenyl-4,4 '-benzidine (TPD) as hole injection layer material, ReO ₃doping mass fraction be 30%, the thickness of hole injection layer is 13nm, vacuum degree 5 × 10 ^-5pa, evaporation rate

The preparation of hole transmission layer: adopt N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4,4 '-benzidine (TPD), thickness is 40nm, and vacuum degree is 5 × 10 ^-5pa, evaporation rate is

The preparation of luminescent layer: adopt N, N '-two (3-aminomethyl phenyl)-N, N '-diphenyl-4,4 '-benzidine (TPD) to be material of main part; Three (2-phenylpyridines) are adopted to close iridium (Ir (ppy) ₃) be green glow guest materials, Ir (mppy) ₃doping mass fraction is 5%, thickness 20nm; Vacuum degree is 5 × 10 ^-5pa, evaporation rate is

The preparation of electron transfer layer: adopt electron transport material oxine aluminium (Alq ₃), vacuum degree 5 × 10 ^-5pa, evaporation rate evaporation thickness 30nm;

The preparation of electron injecting layer: adopt CsF and Rb ₂sO ₄be doped to electron transport material oxine aluminium (Alq ₃) the middle composite material formed, Rb ₂sO ₄doping mass fraction is 10%, CsF doping mass fraction is 30%, and evaporation thickness is 30nm, and vacuum degree is 5 × 10 ^-5pa, evaporation rate is

(3) on electron injecting layer, prepare negative electrode, obtain organic electroluminescence device; Negative electrode comprises the first cathode layer and the second cathode layer that stack gradually; First cathode layer comprises metal oxide layer, alloy-layer and conductive oxide film layer; Second cathode layer comprises multiple metal level be arranged in striped stride on conductive oxide film layer;

Particularly: first adopt the mode of magnetron sputtering to prepare metal oxide layer on electron injecting layer, material is Nb ₂o ₅, V ₂o ₅, Ta ₂o ₅with the composite material that mol ratio 1:1:1 is formed, thickness is 40nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-5pa, accelerating voltage is 400V, and magnetic field is 100G, and power density is 30W/cm ²;

Then adopt the mode of vacuum evaporation to prepare alloy-layer on metal oxide layer, material is Mg:Ag(mass ratio 10:1) alloy, thickness is 10nm, and vacuum degree is 1 × 10 ^-5pa, evaporation rate

Adopt the mode of magnetron sputtering to prepare conductive oxide film layer over the alloyed layer again, material is IZO, thickness 20nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-5pa, accelerating voltage is 400V, and magnetic field is 100G, and power density is 30W/cm ²;

One mask plate is finally provided, mask plate is covered conductive oxide film layer surface, then adopt the mode of vacuum evaporation at the multiple metal level arranged in striped stride of not capped conductive oxide film layer surface preparation, material is Cu, thickness is 100nm, metal layer width is 100 μm, and the spacing of adjacent two metal levels is 100 μm, and the vacuum degree of Vacuum Evaporation Process is 1 × 10 ^-4pa, evaporation rate

Embodiment 5

A preparation method for organic electroluminescence device, comprises the following steps:

(1) transparent ito glass substrate is carried out successively liquid detergent cleaning, washed with de-ionized water, acetone cleaning, ethanol purge, all clean with supersonic wave cleaning machine, each washing 5 minutes, repeats 3 times respectively, and then by oven for drying; And surface activation process is carried out to the ito glass after cleaning, to increase the oxygen content on ITO surface, improve the work function on ITO surface; ITO thickness 100nm;

(2) adopt the mode of vacuum thermal resistance evaporation in ito glass substrate surface preparation light emitting functional layer, comprise hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively; Particularly:

The preparation of hole injection layer: by MoO ₃be doped into as hole injection layer material in 1,1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane (TAPC), MoO ₃doping mass fraction be 25%, the thickness of hole injection layer is 10nm, vacuum degree 5 × 10 ^-5pa, evaporation rate

The preparation of hole transmission layer: adopt 1,1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane (TAPC), thickness is 40nm, and vacuum degree is 5 × 10 ^-5pa, evaporation rate is

The preparation of luminescent layer: adopt 1,1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane (TAPC) to be material of main part; Adopt acetopyruvic acid two (2-phenylpyridine) iridium (Ir (ppy) ₂(acac)) be green glow guest materials, Ir (ppy) ₂(acac) mass fraction that adulterates is 7%, thickness 20nm; Vacuum degree is 5 × 10 ^-5pa, evaporation rate is

The preparation of electron transfer layer: adopt electron transport material 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ), vacuum degree 5 × 10 ^-5pa, evaporation rate evaporation thickness 50nm;

The preparation of electron injecting layer: adopt CsN ₃and Cs ₂sO ₄be doped to electron transport material 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, the composite material formed in 2,4-triazole (TAZ), Cs ₂sO ₄doping mass fraction is 10%, CsN ₃doping mass fraction is 30%, and evaporation thickness is 30nm, and vacuum degree is 5 × 10 ^-5pa, evaporation rate is

(3) on electron injecting layer, prepare negative electrode, obtain organic electroluminescence device; Negative electrode comprises the first cathode layer and the second cathode layer that stack gradually; First cathode layer comprises metal oxide layer, alloy-layer and conductive oxide film layer; Second cathode layer comprises multiple metal level be arranged in striped stride on conductive oxide film layer;

Particularly: first adopt the mode of magnetron sputtering to prepare metal oxide layer on electron injecting layer, material is Nb ₂o ₅, V ₂o ₅with the composite material that mol ratio 1:1 is formed, thickness is 35nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-5pa, accelerating voltage is 400V, and magnetic field is 100G, and power density is 30W/cm ²;

Then adopt the mode of vacuum evaporation to prepare alloy-layer on metal oxide layer, material is Mg:Ag(mass ratio 10:1) alloy, thickness is 16nm, and vacuum degree is 1 × 10 ^-5pa, evaporation rate

Adopt the mode of magnetron sputtering to prepare conductive oxide film layer over the alloyed layer again, material is ITO, thickness 30nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-5pa, accelerating voltage is 400V, and magnetic field is 100G, and power density is 30W/cm ²;

One mask plate is finally provided, mask plate is covered conductive oxide film layer surface, then adopt the mode of vacuum evaporation at the multiple metal level arranged in striped stride of not capped conductive oxide film layer surface preparation, material is Ca, thickness is 110nm, metal layer width is 120 μm, and the spacing of adjacent two metal levels is 110 μm, and the vacuum degree of Vacuum Evaporation Process is 1 × 10 ^-4pa, evaporation rate

Embodiment 6

A preparation method for organic electroluminescence device, comprises the following steps:

(1) transparent ito glass substrate is carried out successively liquid detergent cleaning, washed with de-ionized water, acetone cleaning, ethanol purge, all clean with supersonic wave cleaning machine, each washing 5 minutes, repeats 3 times respectively, and then by oven for drying; And surface activation process is carried out to the ito glass after cleaning, to increase the oxygen content on ITO surface, improve the work function on ITO surface; ITO thickness 100nm;

(2) adopt the mode of vacuum thermal resistance evaporation in ito glass substrate surface preparation light emitting functional layer, comprise hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively; Particularly:

The preparation of hole injection layer: by WO ₃be doped into N, as hole injection layer material in N '-diphenyl-N, N '-two (1-naphthyl)-1,1 '-biphenyl-4,4 '-diamines (NPB), V ₂o ₅doping mass fraction be 30%, the thickness of hole injection layer is 12nm, vacuum degree 1 × 10 ^-3pa, evaporation rate

The preparation of hole transmission layer: adopt N, N '-diphenyl-N, N '-two (1-naphthyl)-1,1 '-biphenyl-4,4 '-diamines (NPB), thickness is 50nm, and vacuum degree is 1 × 10 ^-3pa, evaporation rate is

The preparation of luminescent layer: adopt 9,10-two (1-naphthyl) anthracene (AND) to be material of main part; Three [2-(p-methylphenyl) pyridines] are adopted to close iridium (Ir (mppy) ₃) be green glow guest materials, Ir (mppy) ₃doping mass fraction is 6%, thickness 20nm; Vacuum degree is 1 × 10 ^-3pa, evaporation rate is

The preparation of electron transfer layer: adopt electron transport material 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), vacuum degree 1 × 10 ^-3pa a, evaporation rate evaporation thickness 60nm;

The preparation of electron injecting layer: adopt Cs ₃n and Cs ₂sO ₄be doped to the composite material formed in electron transport material 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), Cs ₂sO ₄doping mass fraction is 10%, Cs ₃n doping mass fraction is 30%, and evaporation thickness is 30nm, and vacuum degree is 1 × 10 ^-3pa, evaporation rate is

(3) on electron injecting layer, prepare negative electrode, obtain organic electroluminescence device; Negative electrode comprises the first cathode layer and the second cathode layer that stack gradually; First cathode layer comprises metal oxide layer, alloy-layer and conductive oxide film layer; Second cathode layer comprises multiple metal level be arranged in striped stride on conductive oxide film layer;

Particularly: first adopt the mode of magnetron sputtering to prepare metal oxide layer on electron injecting layer, material is V ₂o ₅, Ta ₂o ₅with the composite material that mol ratio 1:1 is formed, thickness is 40nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-5pa, accelerating voltage is 600V, and magnetic field is 100G, and power density is 20W/cm ²;

Then adopt the mode of vacuum evaporation to prepare alloy-layer on metal oxide layer, material is the mass fraction 0.6% of Li-Al(Li) alloy, thickness is 15nm, and vacuum degree is 1 × 10 ^-5pa, evaporation rate

Adopt the mode of magnetron sputtering to prepare conductive oxide film layer over the alloyed layer again, material is AZO, thickness 30nm, and the background vacuum in magnetron sputtering process is 1 × 10 ^-5pa, accelerating voltage is 600V, and magnetic field is 100G, and power density is 20W/cm ²;

One mask plate is finally provided, mask plate is covered conductive oxide film layer surface, then adopt the mode of vacuum evaporation at the multiple metal level arranged in striped stride of not capped conductive oxide film layer surface preparation, material is Au, thickness is 110nm, metal layer width is 110 μm, and the spacing of adjacent two metal levels is 110 μm, and the vacuum degree of Vacuum Evaporation Process is 1 × 10 ^-3pa, evaporation rate

Effect example

Test of the present invention and Preparation equipment are high vacuum coating system (scientific instrument development center, Shenyang Co., Ltd), the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the Keithley2400 of Keithley company of the U.S. tests electric property, the CS-100A colorimeter test brightness of Japanese Konica Minolta company and colourity.

By the organic electroluminescence device obtained by the embodiment of the present invention 1 ~ 6 at 1000cd/m ²carry out luminous efficiency test under brightness, test result is as shown in table 1:

Table 1

As can be seen from the data of table 1, organic electroluminescence device provided by the invention, anode surface bright dipping is many, cathode plane bright dipping is few, this exceeds finish matter because anode surface adopts, and bright dipping is many, and light extraction efficiency is higher, cathode plane adopts the negative electrode of composite construction, transparent first cathode layer of cathode plane can carry out transmission to light, and the second cathode layer comprises multiple opaque metal layer arranged in striped stride, can reflect light, thus cathode plane light emission rate is relatively poor, bright dipping is less.

The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.

Claims (10)

1. an organic electroluminescence device, the light emitting functional layer comprising transparent conductive anode substrate and be cascading on described transparent conductive anode substrate and negative electrode, it is characterized in that, described negative electrode comprises be cascading the first cathode layer in described light emitting functional layer and the second cathode layer;

Described first cathode layer comprises the metal oxide layer be cascading in described light emitting functional layer, alloy-layer and conductive oxide film layer; The material of described metal oxide layer is Nb ₂o ₅, V ₂o ₅and Ta ₂o ₅in at least two kinds, the material of described alloy-layer is magnesium-silver alloy or lithium-aluminium alloy, and the material of described conductive oxide film layer is indium tin oxide, aluminium zinc oxide or indium-zinc oxide;

Described second cathode layer comprises multiple metal level be arranged in striped stride on described conductive oxide film layer, and the material of described metal level is Al, Ag, Au, Cu, Ca or Ba.

2. organic electroluminescence device as claimed in claim 1, it is characterized in that, the width of described metal level is 100 μm ~ 150 μm, and the distance between adjacent two described metal levels is 100 μm ~ 150 μm.

3. organic electroluminescence device as claimed in claim 1, it is characterized in that, the thickness of described metal oxide layer is 30nm ~ 50nm, the thickness of described alloy-layer is 10nm ~ 20nm, the thickness of described conductive oxide film layer is 20nm ~ 40nm, and the thickness of described metal level is 100nm ~ 200nm.

4. organic electroluminescence device as claimed in claim 1, is characterized in that, described Nb ₂o ₅, V ₂o ₅and Ta ₂o ₅mole dosage in described metal oxide layer is equal.

5. organic electroluminescence device as claimed in claim 1, it is characterized in that, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that are cascading on described transparent conductive anode substrate.

6. organic electroluminescence device as claimed in claim 5, it is characterized in that, the material of described hole injection layer comprises hole mobile material and is entrained in the hole-injecting material in described hole mobile material, and the doping mass fraction of described hole-injecting material is 25% ~ 35%; Described hole-injecting material is MoO ₃, WO ₃, V ₂o ₅and ReO ₃in at least one, described hole mobile material is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, 4,4', 4''-tri-(carbazole-9-base) triphenylamine, 4,4'-bis-(9-carbazole) biphenyl, N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine and 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] one in cyclohexane, the thickness of described hole injection layer is 10nm ~ 15nm.

7. organic electroluminescence device as claimed in claim 5, it is characterized in that, the material of described hole transmission layer is N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, 4,4', 4''-tri-(carbazole-9-base) triphenylamine, 4,4'-bis-(9-carbazole) biphenyl, N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4,4'-benzidine and 1, one in 1-bis-[4-[N, N '-two (p-tolyl) are amino] phenyl] cyclohexane, the thickness of described hole transmission layer is 30nm ~ 50nm;

The material of described electron transfer layer is 4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-Phen, 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium, oxine aluminium, 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, and 2,4-triazole and 1, one in 3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene, the thickness of described electron transfer layer is 10nm ~ 60nm.

8. organic electroluminescence device as claimed in claim 5, it is characterized in that, the material of described luminescent layer comprises green glow material of main part and green glow guest materials, the doping mass fraction of described green glow guest materials is 2% ~ 10%, described green glow material of main part is 4, 4', 4''-tri-(carbazole-9-base) triphenylamine, 9, 9'-(1, 3-phenyl) two-9H-carbazoles, 4, 4'-bis-(9-carbazole) biphenyl, N, N'-bis-(3-aminomethyl phenyl)-N, N'-diphenyl-4, 4'-benzidine, 1, 1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane or 9, two (1-naphthyl) anthracene of 10-, described green glow guest materials is that three (2-phenylpyridines) close iridium, acetopyruvic acid two (2-phenylpyridine) iridium or three [2-(p-methylphenyl) pyridines] and close iridium, the thickness of described luminescent layer is 10nm ~ 30nm.

9. organic electroluminescence device as claimed in claim 5, it is characterized in that, the material of described electron injecting layer comprises electron transport material and is entrained in the alkali metal sulfates in described electron transport material, and lithium salts or cesium salt, the doping mass fraction of described alkali metal sulfates is 6% ~ 25%, and the doping mass fraction of described lithium salts or cesium salt is 25% ~ 35%; Described alkali metal sulfates is Li ₂sO ₄, Na ₂sO ₄, K ₂sO ₄, Rb ₂sO ₄and Cs ₂sO ₄in any one, described lithium salts is LiF, LiN ₃and Li ₃any one in N, described cesium salt is CsF, CsN ₃, Cs ₃any one in N, described electron transport material is 4,7-diphenyl-1,10-phenanthroline, 4,7-diphenyl-1,10-Phens, 4-biphenyl phenolic group-two (2-methyl-oxine) close aluminium, oxine aluminium, 3-(biphenyl-4-base)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2, one in 4-triazole and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene; The thickness of described electron injecting layer is 15nm ~ 45nm.

10. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:

Adopt the mode of vacuum evaporation to prepare light emitting functional layer on transparent conductive anode substrate, vacuum degree is 1 × 10 ^-5~ 1 × 10 ^-3pa;

Prepare negative electrode on described light emitting functional layer surface again, obtain organic electroluminescence device; Described negative electrode comprises the first cathode layer and the second cathode layer; Described first cathode layer comprises metal oxide layer, alloy-layer and conductive oxide film layer; Described second cathode layer comprises multiple metal level be arranged in striped stride on described conductive oxide film layer; Particularly:

The mode of magnetron sputtering is first adopted to prepare metal oxide layer in described light emitting functional layer; Then adopt the mode of vacuum evaporation to prepare alloy-layer on described metal oxide layer, vacuum degree is 1 × 10 ^-5pa ~ 1 × 10 ^-3pa, evaporation rate the mode of magnetron sputtering is adopted to prepare conductive oxide film layer again on described alloy-layer; Background vacuum in above-mentioned magnetron sputtering process is 1 × 10 ^-5~ 1 × 10 ^-3pa, accelerating voltage is 300 ~ 800V, and magnetic field is 50 ~ 200G, and power density is 10 ~ 40W/cm ²; The material of described metal oxide layer is Nb ₂o ₅, V ₂o ₅and Ta ₂o ₅in at least two kinds, the material of described alloy-layer is magnesium-silver alloy or lithium-aluminium alloy, and the material of described conductive oxide film layer is indium tin oxide, aluminium zinc oxide or indium-zinc oxide;

One mask plate is finally provided, described mask plate is covered described conductive oxide film layer surface, then adopt the mode of vacuum evaporation at the not capped multiple metal level arranged in striped stride of described conductive oxide film layer surface preparation, vacuum degree is 1 × 10 ^-5pa ~ 1 × 10 ^-3pa, evaporation rate the material of described metal level is Al, Ag, Au, Cu, Ca or Ba.