CN104518132A - Organic electroluminescent device and preparation method thereof - Google Patents

Organic electroluminescent device and preparation method thereof Download PDF

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Publication number
CN104518132A
CN104518132A CN201310449545.6A CN201310449545A CN104518132A CN 104518132 A CN104518132 A CN 104518132A CN 201310449545 A CN201310449545 A CN 201310449545A CN 104518132 A CN104518132 A CN 104518132A
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layer
barrier layer
inorganic barrier
organic electroluminescence
electroluminescence device
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周明杰
钟铁涛
王平
张振华
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Publication of CN104518132A publication Critical patent/CN104518132A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention provides an organic electroluminescent device with the structure of a packaging layer. The packaging layer comprises an organic barrier layer and an inorganic barrier layer which are alternatively stacked. The material of the organic barrier layer is one from copper phthalocyanine, N,N'-diphenyl-N,N'-di(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, (8-hydroxyquinoline)aluminum, 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline; and the material of the inorganic barrier layer is a mixture formed by mixing one from a zinc single substance, an aluminum simple substance and an indium simple substance with one from titanium dioxide, zirconium dioxide and hafnium dioxide according to a mass ratio of 1:9 to 3:7. According to the invention, the organic electroluminescent device can be effectively prevented from being corroded by active substances such as external water, oxygen and the like, and the service life of the organic electroluminescent device can be prolonged. The invention further provides a preparation method of an organic electroluminescent device. The preparation method is simple in process and low in raw material price, and can be easily prepared in a large area.

Description

A kind of organic electroluminescence device and preparation method thereof
Technical field
The present invention relates to field of organic electroluminescence, particularly relate to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) is a kind of is luminescent material with organic material, can be the energy conversion device of luminous energy the electric energy conversion applied.It has the outstanding properties such as ultra-thin, self-luminous, response are fast, low-power consumption, has application prospect very widely in fields such as display, illuminations.
Electroluminescent organic material invades responsive especially to oxygen and steam.On the one hand because oxygen is quencher, luminous quantum efficiency can be made significantly to decline, and oxygen also can make its transmittability decline to the oxidation of hole transmission layer; On the other hand, steam can produce hydrolysis to organic compound, its stability is declined greatly, thus causes component failure, shortens the life-span of OLED.Therefore, usually need to carry out packaging protection process to OLED, luminescent device and external environment isolated, divides to prevent water, the intrusion of pernicious gas etc., and then improve stability and the useful life of OLED.
For flexible OLED product, if use traditional OLED encapsulation technology, add encapsulation cover plate in device back, the problems such as weight is large, cost is high, bad mechanical strength can be produced, limit the performance of flexible OLED product.At present, the water oxygen resistant ability of most flexible OLED is not strong, and useful life is shorter, and complicated process of preparation, cost are high.
Summary of the invention
In order to solve the problem; the present invention aims to provide a kind of organic electroluminescence device with encapsulation layer structure; this encapsulation layer structure can reduce outside water, oxygen isoreactivity material effectively to the erosion of organic electroluminescence device; thus effective protection is formed to device organic functional material and electrode, extend the useful life of organic electroluminescence device.Present invention also offers a kind of preparation method of organic electroluminescence device, this preparation method's technique is simple, cheaper starting materials, is easy to large area preparation.
First aspect, the invention provides a kind of organic electroluminescence device, comprise the anode conducting substrate, light emitting functional layer, negative electrode and the encapsulated layer that stack gradually, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually, it is characterized in that, described encapsulated layer is alternately laminated inorganic barrier layer and inorganic barrier layer;
The material of described inorganic barrier layer is CuPc, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, oxine aluminium, 4,4', 4''-tri-(N-3-methylphenyl-N-phenyl is amino) triphenylamine and 2, one in 9-dimethyl-4,7-diphenyl-1,10-phenanthroline;
The material of described inorganic barrier layer is a kind of and a kind of mixture be mixed to form according to mass ratio 1:9 ~ 3:7 in titanium dioxide, zirconium dioxide and hafnium oxide in zinc, aluminium, indium simple substance.
Arrange encapsulated layer at cathode outer side, encapsulated layer is alternately laminated inorganic barrier layer and inorganic barrier layer.
Preferably, encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 4 ~ 6 times.
The material of inorganic barrier layer is CuPc (CuPc), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), oxine aluminium (Alq 3), one in 4,4', 4''-tri-(N-3-methylphenyl-N-phenyl amino) triphenylamines (m-MTDATA) and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP).
Preferably, the thickness of inorganic barrier layer is 200 ~ 300nm.
The material of inorganic barrier layer is one in zinc (Zn), aluminium (Al), indium (In) simple substance and titanium dioxide (TiO 2), zirconium dioxide (ZrO 2) and hafnium oxide (HfO 2) in a kind of mixture be mixed to form according to mass ratio 1:9 ~ 3:7.Wherein, titanium dioxide, zirconium dioxide or hafnium oxide are material of main part, and zinc, aluminium or indium simple substance are guest materials.The molecules of salt density that simple substance and oxide are formed on the surface of inorganic barrier layer increases, and compact structure, enhances water oxygen resistant ability.
In inorganic barrier layer, the mass ratio of guest materials and material of main part is 1:9 ~ 3:7.
Preferably, the thickness of inorganic barrier layer is 100 ~ 150nm.
Inorganic barrier layer surfacing, can absorb and disperse the stress of each interlayer, and inorganic barrier layer has good water oxygen barrier performance, and by mode that is organic and inorganic combination, the moisture separator that energy forming property is good, prevents slight crack.
Preferably, the material of anode conducting substrate is conducting glass substrate or conduction organic film substrate.More preferably, anode conducting substrate is indium tin oxide (ITO).
Preferably, the thickness of anode conducting substrate is 100nm.
Light emitting functional layer is arranged on anode conducting substrate.
Light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually.
Preferably, the material of hole injection layer is MoO 3the mixture be mixed to form according to mass ratio 3:7 with NPB.
Preferably, the thickness of hole injection layer is 10nm.
Preferably, the material of hole transmission layer is 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA).
Preferably, the thickness of hole transmission layer is 30nm.
Preferably, the material of luminescent layer is that three (2-phenylpyridines) close iridium (Ir (ppy) 3) mixture that is mixed to form according to mass ratio 5:95 with 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBi).
Preferably, the thickness of luminescent layer is 20nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen)
Preferably, the thickness of electron transfer layer is 10nm.
Preferably, the material of electron injecting layer is cesium azide (CsN 3) mixture that is mixed to form according to mass ratio 3:7 with Bphen.
Preferably, the thickness of electron injecting layer is 20nm.
Negative electrode is arranged in light emitting functional layer.
Preferably, the material of negative electrode is aluminium (Al).
Preferably, the thickness of negative electrode is 100nm.
Second aspect, the invention provides a kind of preparation method of organic electroluminescence device, comprises the following steps:
S1, provide clean anode conducting substrate, and activation processing is carried out to described anode conducting substrate;
S2, prepare light emitting functional layer and negative electrode in the vacuum evaporation of described anode conducting substrate surface, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually;
S3, the mode of vacuum evaporation is adopted to prepare inorganic barrier layer at described cathode surface, the material of described inorganic barrier layer is CuPc, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, oxine aluminium, 4,4', 4''-tri-(N-3-methylphenyl-N-phenyl is amino) triphenylamine and 2,9-dimethyl-4, one in 7-diphenyl-1,10-phenanthroline;
S4, magnetically controlled sputter method is adopted to prepare inorganic barrier layer on described inorganic barrier layer surface, the material of described inorganic barrier layer is a kind of and a kind of mixture be mixed to form according to mass ratio 1:9 ~ 3:7 in titanium dioxide, zirconium dioxide and hafnium oxide in zinc, aluminium, indium simple substance, described magnetron sputtering condition is accelerating voltage 300 ~ 800V, magnetic field 50 ~ 200G, power density 1 ~ 40W/cm 2, background vacuum 1 × 10 -5~ 1 × 10 -3pa;
Finally obtain described organic electroluminescence device.
In step S1, by the cleaning of antianode electrically-conductive backing plate, the organic pollution of removing anode conducting substrate surface.
Particularly, the clean operation of anode conducting substrate is: cleaned in supersonic wave cleaning machine with acetone, ethanol, deionized water, ethanol successively by anode conducting substrate, then dry up with nitrogen, stove-drying, obtains the anode conducting substrate cleaned.
Surface activation process is carried out to the anode conducting substrate after cleaning, to increase the oxygen content of conductive surface layer, improves the work function of conductive layer surface.
Preferably, the material of anode conducting substrate is conducting glass substrate or conduction organic film substrate.More preferably, anode conducting substrate is indium tin oxide (ITO).
Preferably, the thickness of anode conducting substrate is 100nm.
In step S2, light emitting functional layer is arranged on anode conducting substrate by vacuum evaporation.
Preferably, during vacuum evaporation light emitting functional layer, condition is vacuum degree 3 × 10 -5pa, evaporation rate
Light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually.
Preferably, the material of hole injection layer is MoO 3the mixture be mixed to form according to mass ratio 3:7 with NPB.
Preferably, the thickness of hole injection layer is 10nm.
Preferably, the material of hole transmission layer is 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA).
Preferably, the thickness of hole transmission layer is 30nm.
Preferably, the material of luminescent layer is that three (2-phenylpyridines) close iridium (Ir (ppy) 3) mixture that is mixed to form according to mass ratio 5:95 with 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBi).
Preferably, the thickness of luminescent layer is 20nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen)
Preferably, the thickness of electron transfer layer is 10nm.
Preferably, the material of electron injecting layer is cesium azide (CsN 3) mixture that is mixed to form according to mass ratio 3:7 with Bphen.
Preferably, the thickness of electron injecting layer is 20nm.
Negative electrode is arranged in light emitting functional layer by vacuum evaporation.
Preferably, during vacuum evaporation negative electrode, condition is vacuum degree 3 × 10 -5pa, evaporation rate
Preferably, the material of negative electrode is aluminium (Al).
Preferably, the thickness of negative electrode is 100nm.
In step S3, inorganic barrier layer is arranged on cathode surface by vacuum evaporation.
The mode of vacuum evaporation is adopted to prepare inorganic barrier layer.Preferably, preparation process condition is vacuum degree 1 × 10 -5pa ~ 1 × 10 -3pa, evaporation rate
The material of inorganic barrier layer is CuPc, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, oxine aluminium, 4,4', 4''-tri-(N-3-methylphenyl-N-phenyl is amino) triphenylamine and 2, one in 9-dimethyl-4,7-diphenyl-1,10-phenanthroline.
Preferably, the thickness of inorganic barrier layer is 200 ~ 300nm.
In step S4, inorganic barrier layer adopts magnetically controlled sputter method to be arranged on inorganic barrier layer surface.
During magnetron sputtering preparation mixing barrier layer, condition is accelerating voltage 300 ~ 800V, magnetic field 50 ~ 200G, power density 1 ~ 40W/cm 2, background vacuum 1 × 10 -5~ 1 × 10 -3pa.
The material of inorganic barrier layer is a kind of and a kind of mixture be mixed to form according to mass ratio 1:9 ~ 3:7 in titanium dioxide, zirconium dioxide and hafnium oxide in zinc, aluminium, indium simple substance.Wherein, titanium dioxide, zirconium dioxide or hafnium oxide are material of main part, and zinc, aluminium or indium simple substance are guest materials.
In inorganic barrier layer, the mass ratio of guest materials and material of main part is 1:9 ~ 3:7.
Preferably, the thickness of inorganic barrier layer is 100 ~ 150nm.
Preferably, encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 4 ~ 6 times.
The present invention has following beneficial effect:
(1) a kind of organic electroluminescence device with encapsulation layer structure provided by the invention, effectively can prevent outside water, oxygen isoreactivity material to the erosion of organic electroluminescence device, have good sealing and longer useful life.
(2) the OLED encapsulation layer structure that the present invention proposes is applicable to the flexible OLED devices that the OLED prepared with substrate of glass and plastics or metal are prepared for substrate, and this technology is specially adapted to the application of flexible OLED devices.
(3) preparation method of a kind of organic electroluminescence device provided by the invention, this preparation method's technique is simple, cheaper starting materials, is easy to large area preparation.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structure chart of the organic electroluminescence device that the embodiment of the present invention 6 provides.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1:
A kind of organic electroluminescence device, is obtained by following operating procedure:
(1) clean anode conducting substrate is provided:
Cleaned in supersonic wave cleaning machine with acetone, ethanol, deionized water, ethanol successively by ito glass substrate, individual event washing cleaning 5 minutes, then dry up with nitrogen, stove-drying is stand-by; Surface activation process is carried out to the ito glass after cleaning; ITO thickness is 100nm;
(2) vacuum evaporation light emitting functional layer on ito glass substrate:
Particularly, light emitting functional layer comprises hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer;
The preparation of hole injection layer: by MoO 3the mixture be mixed to get according to mass ratio 3:7 with NPB as the material of hole injection layer, thickness 10nm, vacuum degree 3 × 10 -5pa, evaporation rate
The preparation of hole transmission layer: adopt 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) as hole mobile material, vacuum degree 3 × 10 -5pa, evaporation rate evaporation thickness 30nm;
The preparation of luminescent layer: adopt Ir (ppy) 3the mixture be mixed to form according to mass ratio 5:95 with TPBi as the material of luminescent layer, vacuum degree 3 × 10 -5pa, evaporation rate evaporation thickness 20nm;
The preparation of electron transfer layer: evaporation one deck 4,7-diphenyl-1,10-phenanthroline (Bphen) as electron transport material, vacuum degree 3 × 10 -5pa, evaporation rate evaporation thickness 10nm;
The preparation of electron injecting layer: by CsN 3the mixture be mixed to form according to mass ratio 3:7 with Bphen as the material of electron injecting layer, vacuum degree 3 × 10 -5pa, evaporation rate evaporation thickness 20nm;
(3) negative electrode is prepared on light emitting functional layer surface:
Metallic cathode adopts aluminium (Al), and thickness is 100nm, vacuum degree 3 × 10 -5pa, evaporation rate
(4) encapsulated layer is prepared at cathode outer side:
Encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 6 times;
The making of inorganic barrier layer: adopt the mode of vacuum evaporation to prepare one deck CuPc on negative electrode, vacuum degree 1 × 10 -5pa, evaporation rate thickness 300nm;
The making of inorganic barrier layer: by Zn and TiO 2the mixture be mixed to form according to mass ratio 1:4, as the material of inorganic barrier layer, adopts magnetically controlled sputter method to make, accelerating voltage 450V, magnetic field 150G, power density 25W/cm 2, background vacuum 1 × 10 -5pa, thickness 150nm;
Final obtained organic electroluminescence device.
Embodiment 2:
A kind of organic electroluminescence device, is obtained by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) encapsulated layer is prepared at cathode outer side:
Encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 6 times;
The making of inorganic barrier layer: adopt the mode of vacuum evaporation to prepare one deck NPB on negative electrode, vacuum degree 5 × 10 -5pa, evaporation rate thickness 250nm;
The making of inorganic barrier layer: by Al and ZrO 2the mixture be mixed to form according to mass ratio 3:7, as the material of inorganic barrier layer, adopts magnetically controlled sputter method to make, accelerating voltage 300V, magnetic field 200G, power density 1W/cm 2, background vacuum 1 × 10 -5pa, thickness 150nm;
Final obtained organic electroluminescence device.
Embodiment 3:
A kind of organic electroluminescence device, is obtained by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) encapsulated layer is prepared at cathode outer side:
Encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 6 times;
The making of inorganic barrier layer: adopt the mode of vacuum evaporation to prepare one deck Alq on negative electrode 3, vacuum degree 5 × 10 -5pa, evaporation rate thickness 200nm;
The making of inorganic barrier layer: by In and HfO 2the mixture be mixed to form according to mass ratio 1:9, as the material of inorganic barrier layer, adopts magnetically controlled sputter method to make, accelerating voltage 800V, magnetic field 50G, power density 40W/cm 2, background vacuum 5 × 10 -5pa, thickness 100nm;
Final obtained organic electroluminescence device.
Embodiment 4:
A kind of organic electroluminescence device, is obtained by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) encapsulated layer is prepared at cathode outer side:
Encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 5 times;
The making of inorganic barrier layer: adopt the mode of vacuum evaporation to prepare one deck m-MTDATA on negative electrode, vacuum degree 5 × 10 -5pa, evaporation rate thickness 250nm;
The making of inorganic barrier layer: by Zn and HfO 2the mixture be mixed to form according to mass ratio 1:4, as the material of inorganic barrier layer, adopts magnetically controlled sputter method to make, accelerating voltage 600V, magnetic field 120G, power density 15W/cm 2, background vacuum 5 × 10 -5pa, thickness 120nm;
Final obtained organic electroluminescence device.
Embodiment 5:
A kind of organic electroluminescence device, is obtained by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) encapsulated layer is prepared at cathode outer side:
Encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 5 times;
The making of inorganic barrier layer: adopt the mode of vacuum evaporation to prepare one deck BCP on negative electrode, vacuum degree 5 × 10 -5pa, evaporation rate thickness 250nm;
The making of inorganic barrier layer: by Al and HfO 2the mixture be mixed to form according to mass ratio 3:17, as the material of inorganic barrier layer, adopts magnetically controlled sputter method to make, accelerating voltage 450V, magnetic field 150G, power density 25W/cm 2, background vacuum 5 × 10 -5pa, thickness 130nm;
Final obtained organic electroluminescence device.
Embodiment 6
A kind of organic electroluminescence device, is obtained by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) encapsulated layer is prepared at cathode outer side:
Encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 4 times;
The making of inorganic barrier layer: adopt the mode of vacuum evaporation to prepare one deck CuPc on negative electrode, vacuum degree 1 × 10 -3pa, evaporation rate thickness 250nm;
The making of inorganic barrier layer: by In and HfO 2the mixture be mixed to form according to mass ratio 3:17, as the material of inorganic barrier layer, adopts magnetically controlled sputter method to make, accelerating voltage 450V, magnetic field 150G, power density 25W/cm 2, background vacuum 1 × 10 -3pa, thickness 120nm;
Final obtained organic electroluminescence device.
Fig. 1 is the structural representation of the organic electroluminescence device of the present embodiment.As shown in Figure 1, the structure of this organic electroluminescence device comprises the anode conducting substrate 10, light emitting functional layer 20, negative electrode 30, the encapsulated layer 40(that stack gradually and comprises inorganic barrier layer 401, inorganic barrier layer 402, inorganic barrier layer 403, inorganic barrier layer 404, inorganic barrier layer 405, inorganic barrier layer 406, inorganic barrier layer 407, inorganic barrier layer 408).
Effect example
Adopt the vapor permeability (WVTR) of Ca film electrical testing system testing organic electroluminescence device, and test life-span (the T70@1000cd/m of organic electroluminescence device 2), from original intensity 1000cd/m 2decay to the time needed for 70%.WVTR and the life-span of the organic electroluminescence device of the embodiment of the present invention 1 ~ 6 preparation are as shown in table 1.As can be seen from the table, WVTR all remains on 10 -4g/ (m 2day) order of magnitude, minimumly reaches 5.4 × 10 -4g/ (m 2day), the real requirement of flexible OLED can be met.The life time of organic electroluminescence device is the longest reaches 4711 hours.This illustrates, the organic electroluminescence device of encapsulation layer structure that prepared by the present invention have can prevent outside water, oxygen isoreactivity material to the erosion of organic electroluminescence device effectively, has good sealing and longer useful life.
Table 1
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.

Claims (9)

1. an organic electroluminescence device, comprise the anode conducting substrate, light emitting functional layer, negative electrode and the encapsulated layer that stack gradually, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually, it is characterized in that, described encapsulated layer is alternately laminated inorganic barrier layer and inorganic barrier layer;
The material of described inorganic barrier layer is CuPc, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, oxine aluminium, 4,4', 4''-tri-(N-3-methylphenyl-N-phenyl is amino) triphenylamine and 2, one in 9-dimethyl-4,7-diphenyl-1,10-phenanthroline;
The material of described inorganic barrier layer is a kind of and a kind of mixture be mixed to form according to mass ratio 1:9 ~ 3:7 in titanium dioxide, zirconium dioxide and hafnium oxide in zinc, aluminium, indium simple substance.
2. organic electroluminescence device as claimed in claim 1, it is characterized in that, described encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 4 ~ 6 times.
3. organic electroluminescence device as claimed in claim 1, it is characterized in that, the thickness of described inorganic barrier layer is 200 ~ 300nm.
4. organic electroluminescence device as claimed in claim 1, it is characterized in that, the thickness of described inorganic barrier layer is 100 ~ 150nm.
5. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
S1, provide clean anode conducting substrate, and activation processing is carried out to described anode conducting substrate;
S2, prepare light emitting functional layer and negative electrode in the vacuum evaporation of described anode conducting substrate surface, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually;
S3, the mode of vacuum evaporation is adopted to prepare inorganic barrier layer at described cathode surface, the material of described inorganic barrier layer is CuPc, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, oxine aluminium, 4,4 ', 4 ' '-three (N-3-methylphenyl-N-phenyl is amino) triphenylamine and 2,9-dimethyl-4, one in 7-diphenyl-1,10-phenanthroline;
S4, magnetically controlled sputter method is adopted to prepare inorganic barrier layer on described inorganic barrier layer surface, the material of described inorganic barrier layer is a kind of and a kind of mixture be mixed to form according to mass ratio 1:9 ~ 3:7 in titanium dioxide, zirconium dioxide and hafnium oxide in zinc, aluminium, indium simple substance, described magnetron sputtering condition is accelerating voltage 300 ~ 800V, magnetic field 50 ~ 200G, power density 1 ~ 40W/cm 2, background vacuum 1 × 10 -5~ 1 × 10 -3pa;
Finally obtain described organic electroluminescence device.
6. the preparation method of organic electroluminescence device as claimed in claim 5, it is characterized in that, described inorganic barrier layer preparation process condition is vacuum degree 1 × 10 -5pa ~ 1 × 10 -3pa, evaporation rate
7. the preparation method of organic electroluminescence device as claimed in claim 5, it is characterized in that, described encapsulated layer is inorganic barrier layer and the inorganic matter barrier layer of alternately laminated 4 ~ 6 times.
8. the preparation method of organic electroluminescence device as claimed in claim 5, it is characterized in that, the thickness of described inorganic barrier layer is 200 ~ 300nm.
9. the preparation method of organic electroluminescence device as claimed in claim 5, it is characterized in that, the thickness of described inorganic barrier layer is 100 ~ 150nm.
CN201310449545.6A 2013-09-27 2013-09-27 Organic electroluminescent device and preparation method thereof Pending CN104518132A (en)

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Application publication date: 20150415