CN104518113A - Organic light emitting diode device and preparation method thereof - Google Patents
Organic light emitting diode device and preparation method thereof Download PDFInfo
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- CN104518113A CN104518113A CN201310454878.8A CN201310454878A CN104518113A CN 104518113 A CN104518113 A CN 104518113A CN 201310454878 A CN201310454878 A CN 201310454878A CN 104518113 A CN104518113 A CN 104518113A
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- barrier layer
- inorganic barrier
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- electroluminescence device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Abstract
The invention provides an organic light emitting diode device. The organic light emitting diode device include an anode electric conduction substrate, a light-emitting functional layer, a cathode layer and an encapsulation layer which are stacked to one another sequentially; and the encapsulation layer comprises at least one encapsulation unit, wherein the encapsulation unit includes a silicon carbonitride barrier layer, a first inorganic barrier layer and a second inorganic barrier layer which are stacked to one another sequentially, wherein the silicon carbonitride barrier layer is made of a silicon carbonitride compound, and the first inorganic barrier layer is made of an oxide of IIIA-family metal, and the second inorganic barrier layer is made of an oxide of IVB-family metal. According to the organic light emitting diode device, multi-layer material alternate encapsulation is adopted, so that the organic light emitting diode device has high density, and erosion of the organic light emitting diode device, which is caused by oxygen and water vapor, can be effectively reduced, and therefore, the service life of the organic light emitting diode device can be greatly prolonged. The invention also provides a preparation method of the organic light emitting diode device.
Description
Technical field
The present invention relates to organic electroluminescence device, be specifically related to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) is a kind of current mode light emitting semiconductor device based on organic material.Its typical structure is between transparent anode and cathode layer, accompany multilayer organic material film (hole injection layer, hole transmission layer, luminescent layer, electron supplying layer and electron injecting layer), and apply certain voltage when between electrode after, luminescent layer will be luminous.In recent years, organic electroluminescence device because cost of manufacture own is low, the response time is short, luminosity is high, the feature such as wide viewing angle, low driving voltage and energy-conserving and environment-protective received extensive concern in fields such as total colouring, backlight and illuminations, and has been considered to be most likely at the device of new generation following illumination and display device market occupying dominance.
At present, there is life-span shorter problem in organic electroluminescence device, and this occurs rapidly aging mainly because organic material film is very loose after easily being infiltrated by compositions such as the steam in air and oxygen.When real work, cathode layer is corroded 10% work that will have a strong impact on device.Therefore, be necessary to provide a kind of method for packing that effectively can intercept the organic electroluminescence device of water Oxygen permeation.
Summary of the invention
For overcoming the defect of above-mentioned prior art, the invention provides a kind of organic electroluminescence device and preparation method thereof.The encapsulated layer of this organic electroluminescence device adopts carbonitride of silicium barrier layer, the first inorganic barrier layer and the encapsulation of the second inorganic barrier layer alternative stacked, compactness is high, effectively can reduce oxygen and steam to the erosion of organic electroluminescence device, thus improve the life-span of organic electroluminescence device significantly.The inventive method is applicable to take electro-conductive glass as organic electroluminescence device prepared by substrate, is also applicable to the flexible organic electroluminescent device prepared for substrate with plastics or metal.The inventive method is particularly useful for encapsulating flexible organic electroluminescent device.
On the one hand, the invention provides a kind of organic electroluminescence device, comprise the anode conducting substrate, light emitting functional layer, cathode layer and the encapsulated layer that stack gradually, described encapsulated layer comprises at least one encapsulation unit, described encapsulation unit comprises silicon oxynitride barrier layer that lamination successively arranges, the first inorganic barrier layer and the second inorganic barrier layer, the material on described silicon oxynitride barrier layer is silicon oxynitride compound, the material of described first inorganic barrier layer is the oxide of III A race metal, and the material of described second inorganic barrier layer is the oxide of IV B race metal.
Preferably, the oxide of described III A race metal is diboron trioxide (B
2o
3), alundum (Al2O3) (Al
2o
3), gallic oxide (Ga
2o
3), indium sesquioxide (In
2o
3) or thallic oxide (Tl
2o
3), the oxide of described IV B race metal is titanium dioxide (TiO
2), zirconium dioxide (ZrO
2) or hafnium oxide (HfO
2).
Preferably, the thickness on described silicon oxynitride barrier layer is 150nm ~ 200nm, and the thickness of described first inorganic barrier layer is 15nm ~ 20nm, and the thickness of described second inorganic barrier layer is 15nm ~ 20nm.
Preferably, described encapsulation unit repeats to arrange 3 ~ 5 times.
Preferably, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually.
Preferably, described anode substrate is conducting glass substrate or conductive plastics or metallic film substrate.
Hole injection layer adopts common used material in industry, be preferably N, N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB) to adulterate molybdenum trioxide (MoO
3).
Hole transmission layer adopts common used material in industry, is preferably 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA).
Luminescent layer adopts common used material in industry, is preferably 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), three (the 2-phenylpyridines) that adulterate and closes iridium (Ir (ppy) 3).
Electron transfer layer adopts common used material in industry, is preferably 4,7-diphenyl-1,10-phenanthroline (Bphen).
Electron injecting layer adopts common used material in industry, is preferably 4,7-diphenyl-1,10-phenanthroline (Bphen) and adulterates cesium azide (CsN
3).
Cathode layer can be non-transparent metals cathode layer (aluminium, silver, gold etc.), also can be transparent cathode (dielectric layer/metal level/dielectric layer structure etc. that dielectric layer tramp metal layer is formed).
Preferably, the material of cathode layer is aluminium, silver or golden.
Preferably, cathode layer is the sandwich of tin indium oxide (ITO)/Ag/ tin indium oxide (ITO), ZnS/Ag/ZnS formation.
The material of first and second inorganic barrier layer described is respectively the oxide of III A race metal and the oxide of IV B race metal, and compact structure, effectively can intercept water Oxygen permeation and enter device inside; The material on described carbonitride of silicium barrier layer is carbonitride of silicium compound (SiN
xc
y, wherein 0.01 < x≤1.3,0.01 < y≤0.8,0.5 < x+y < 2), this carbonitride of silicium barrier layer is amorphous structure, has SiC and Si
3n
4character, internal stress is little, and resistance to corrosion is strong, water, Oxygen permeation path can be extended further, in a word, first and second inorganic barrier layer described and described carbonitride of silicium barrier layer effectively can stop that extraneous steam and oxygen are to the erosion of organic electroluminescence device synergistically, thus extend device lifetime.
On the other hand, the invention provides a kind of preparation method of organic electroluminescence device, comprise the following steps:
(1) anode pattern preparing organic electroluminescence device on the electrically-conductive backing plate of cleaning forms anode conducting substrate; The method of vacuum evaporation is adopted to prepare light emitting functional layer and cathode layer on anode conducting substrate;
(2) on cathode layer, prepare encapsulated layer, described encapsulated layer comprises at least one encapsulation unit, and described encapsulation unit preparation method is as follows:
The making on (a) carbonitride of silicium barrier layer:
Using plasma strengthens chemical vapour deposition technique on described cathode layer surface deposition carbonitride of silicium barrier layer, the material on described carbonitride of silicium barrier layer is carbonitride of silicium compound, in the process of described deposit carbon silicon nitride barrier, depositing temperature is 40 ~ 60 DEG C, and the source of the gas of employing is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), wherein, the flow of described hydrogen is 190 ~ 210sccm, and the flow of described methyl-monosilane is 4 ~ 10sccm, and the flow of described ammonia is 20 ~ 30 times of described methyl-monosilane flow;
(b) first making of inorganic barrier layer:
On described carbonitride of silicium barrier layer, the first inorganic barrier layer is deposited by the method for ald, the material of described first inorganic barrier layer is the oxide of III A race metal, in the process of described deposition first inorganic barrier layer, depositing temperature is 40 ~ 60 DEG C, the presoma adopted is tri-methylated compound and the steam of III A race metal, the described tri-methylated compound of III A race metal and the injection length of steam are all 10 ~ 20ms, interval inert gas injecting between the two, the injection length of described inert gas is 5 ~ 10s, the tri-methylated compound of described III A race metal, steam and inert gas flow be all 10 ~ 20sccm,
(c) second making of inorganic barrier layer:
On described first inorganic barrier layer, the second inorganic barrier layer is deposited by the method for ald, obtain organic electroluminescence device, wherein, the material of described second inorganic barrier layer is the oxide of IV B race metal, in the process of described deposition second inorganic barrier layer, depositing temperature is 40 ~ 60 DEG C, the presoma adopted is four (dimethyl amido) compound and steam of IV B race metal, described four (dimethyl amido) compounds of IV B race metal and the injection length of steam are respectively 0.2 ~ 1s and 20 ~ 40ms, interval inert gas injecting between the two, the injection length of described inert gas is 5 ~ 10s, four (dimethyl amido) compound of described IV B race metal, steam and inert gas flow be all 10 ~ 20sccm.
In described step (a), the chemical constitution of described methyl-monosilane (MMS) is:
Preferably, in described step (b), the tri-methylated compound of described III A race metal is tri-methylated boron (B (CH
3)
3), tri-methylated aluminium (Al (CH
3)
3), tri-methylated gallium (Ga (CH
3)
3), tri-methylated indium (In (CH
3)
3) or tri-methylated thallium (Tl (CH
3)
3), the oxide of described III A race metal is diboron trioxide (B
2o
3), alundum (Al2O3) (Al
2o
3), gallic oxide (Ga
2o
3), indium sesquioxide (In
2o
3) or thallic oxide (Tl
2o
3); In described step (c), four (dimethyl amido) compound of described IV B race metal is four (dimethyl amido) titanium (Ti (N (CH
3)
2)
4), four (dimethyl amido) zirconium (Zr (N (CH
3)
2)
4) or four (dimethyl amido) hafnium (Hf (N (CH
3)
2)
4), the oxide of described IV B race metal is titanium dioxide (TiO
2), zirconium dioxide (ZrO
2) or hafnium oxide (HfO
2).
Described B (CH
3)
3, Al (CH
3)
3, Ga (CH
3)
3, In (CH
3)
3with Tl (CH
3)
3chemical constitution be respectively:
Described four (dimethyl amido) compound is Ti (N (CH
3)
2)
4, Zr (N (CH
3)
2)
4with Hf (N (CH
3)
2)
4chemical constitution be respectively:
Preferably, the thickness on described silicon oxynitride barrier layer is 150nm ~ 200nm, and the thickness of described first inorganic barrier layer is 15nm ~ 20nm, and the thickness of described second inorganic barrier layer is 15nm ~ 20nm.
Preferably, described encapsulated layer repeats to arrange 3 ~ 5 times.
Preferably, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually.
Preferably, described anode substrate is conducting glass substrate or conductive plastics or metallic film substrate.
Hole injection layer adopts common used material in industry, be preferably N, N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB) to adulterate MoO
3(molybdenum trioxide).
Hole transmission layer adopts common used material in industry, is preferably 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA).
Luminescent layer adopts common used material in industry, is preferably 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), three (the 2-phenylpyridines) that adulterate and closes iridium (Ir (ppy) 3).
Electron transfer layer adopts common used material in industry, is preferably 4,7-diphenyl-1,10-phenanthroline (Bphen).
Electron injecting layer adopts common used material in industry, is preferably 4,7-diphenyl-1,10-phenanthroline (Bphen) and adulterates cesium azide (CsN
3).
Cathode layer can be non-transparent metals cathode layer (aluminium, silver, gold etc.), also can be transparent cathode (dielectric layer/metal level/dielectric layer structure etc. that dielectric layer tramp metal layer is formed).
Preferably, the material of cathode layer is aluminium, silver or golden.
Preferably, cathode layer is the sandwich that tin indium oxide (ITO)/Ag/ITO, ZnS/Ag/ZnS is formed.
Obtain described organic electroluminescence device by above-mentioned steps, comprise the anode conducting substrate, light emitting functional layer, cathode layer and the encapsulated layer that are cascading.
The preparation method of described organic electroluminescence device adopts PECVD on negative electrode, prepare carbonitride of silicium barrier layer, and this PECVD method can obtain compound film barrier layer under the condition that temperature is lower, and high-temperature operation can be prevented the infringement of device organic layer; Adopt atom deposition method on carbonitride of silicium barrier layer, prepare the first inorganic barrier layer and the second inorganic barrier layer successively, this atom deposition method can obtain compact structure and the uniform film barrier layer of film quality, the overall water and oxygen barrier property of encapsulated layer can be improved, the preparation method of this device has obtained multilayer material layer and has replaced encapsulating structure, preparation method is easy, the encapsulating material adopted is less expensive, is easy to large area preparation, and the method is particularly useful for encapsulating flexible organic electroluminescent device.
The invention provides a kind of organic electroluminescence device and preparation method thereof and there is following beneficial effect:
(1) organic electroluminescence device of the present invention adopts carbonitride of silicium barrier layer, the first inorganic barrier layer and the second inorganic barrier layer alternative stacked to arrange, compactness is high, effectively can reduce oxygen and steam to the erosion of organic electroluminescence device, improve the life-span of organic electroluminescence device significantly;
(2) water resistance (WVTR) of organic electroluminescence device of the present invention reaches 1.1 × 10
-6g/m
2day, the life-span reaches 25, more than 000 hour (T70@1000cd/m
2: namely starting brightness is 1000cd/m
2, brightness decay is to 70% time used);
(3) the inventive method is applicable to encapsulation is organic electroluminescence device prepared by anode substrate with electro-conductive glass, is also applicable to encapsulate the flexible organic electroluminescent device prepared for anode substrate with plastics or metal.The inventive method is particularly useful for encapsulating flexible organic electroluminescent device;
(4) organic electroluminescence device material of the present invention is cheap, and method for packing technique is simple, and easy large area preparation, is suitable for industrialization and uses on a large scale.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device that the embodiment of the present invention 1 obtains.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
The structural representation of organic electroluminescence device as shown in Figure 1, present embodiments provides a kind of preparation method of organic electroluminescence device, comprises the following steps:
(1) on anode substrate, prepare light emitting functional layer 20 and cathode layer 30
A. the pre-treatment of conducting glass substrate
Get ito glass substrate 10, carry out acetone cleaning → ethanol purge → washed with de-ionized water → ethanol purge successively, all clean with supersonic wave cleaning machine, individual event washing cleaning 5 minutes, then dry up with nitrogen, stove-drying is stand-by; Also need to carry out surface activation process to the ito glass after cleaning, to increase the oxygen content of conductive surface layer, improve the work function of conductive layer surface; ITO thickness is 100nm;
B. the preparation of light emitting functional layer 20 and cathode layer 30
The method of vacuum evaporation is adopted to form hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer successively on ito glass substrate 10, described hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer form light emitting functional layer 20, and method is as follows:
The preparation of hole injection layer: evaporation to be adulterated MoO by NPB on ito glass substrate 10
3the composite material formed, MoO
3doping mass fraction be 30%, this layer thickness is 10nm, vacuum degree 3 × 10
-5pa, evaporation rate
The preparation of hole transmission layer: evaporation hole transmission layer on hole injection layer, adopts 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) as hole mobile material, vacuum degree 3 × 10
-5pa, evaporation rate
evaporation thickness 30nm;
The preparation of luminescent layer: evaporation luminescent layer on hole transmission layer, the material of main part of luminescent layer adopts 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-Ji) benzene (TPBI), guest materials adopts three (2-phenylpyridines) to close iridium (Ir (ppy) 3), doping mass fraction 5%, vacuum degree 3 × 10
-5pa, evaporation rate
evaporation thickness 20nm;
The preparation of electron transfer layer: evaporation one deck 4,7-diphenyl-1,10-phenanthroline (Bphen) is as electron transport material on luminescent layer, vacuum degree 3 × 10
-5pa, evaporation rate
evaporation thickness 10nm;
The preparation of electron injecting layer: evaporation electron injecting layer on the electron transport layer, mixes CsN3 in Bphen, doping mass fraction 30%, vacuum degree 3 × 10
-5pa, evaporation rate
evaporation thickness 20nm;
On electron injecting layer, evaporation prepares cathode layer 30 again, and metal cathode layer 30 adopts aluminium (Al), and thickness is 100nm, vacuum degree 3 × 10
-5pa, evaporation rate
(2) on cathode layer 30, encapsulated layer 40 is prepared
A. the making on carbonitride of silicium barrier layer 401:
Using plasma strengthens chemical vapour deposition technique (PECVD) on described cathode layer 30 surface deposition carbonitride of silicium barrier layer 401, the material on described carbonitride of silicium barrier layer 401 is carbonitride of silicium, the thickness of described deposit carbon silicon nitride barrier 401 is 110nm, in the process of described deposit carbon silicon nitride barrier 401, depositing temperature is 60 DEG C, and the source of the gas of employing is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), wherein, the flow of described MMS is 5sccm, described NH
3the ratio of/MMS is 20, described H
2flow be 190sccm;
B. the making of the first inorganic barrier layer 402:
On described carbonitride of silicium barrier layer 401, prepare the first inorganic barrier layer 402 by the method for ald, the material of described first inorganic barrier layer 402 is B
2o
3, the thickness of described first inorganic barrier layer 402 is 15nm, and depositing temperature is 60 DEG C, and the presoma of employing is B (CH
3)
3and steam, described B (CH
3)
3with the inert gas adopted between steam is N
2, described B (CH
3)
310ms is all, described N with the injection length of steam
2injection length be 10s, described B (CH
3)
3, steam and N
2flow be all 15sccm;
C. the making of the second inorganic barrier layer 403:
On described first inorganic barrier layer 402, prepare the second inorganic barrier layer 403 by the method for ald, the material of described second inorganic barrier layer 403 is HfO
2, the thickness of described second inorganic barrier layer 403 is 15nm, and depositing temperature is 60 DEG C, and the presoma of employing is Hf (N (CH
3)
2)
4and steam, described Hf (N (CH
3)
2)
4with the inert gas adopted between steam is N
2, described Hf (N (CH
3)
2)
40.6s and 20ms is respectively, described N with the injection length of steam
2injection length be 8s, described Hf (N (CH
3)
2)
4, steam and N
2flow be all 11sccm;
Alternately repeat to prepare carbonitride of silicium barrier layer 401, first inorganic barrier layer 402 and the second inorganic barrier layer 403 3 times respectively, form encapsulated layer 40, obtain organic electroluminescence device, as shown in Figure 1, the organic electroluminescence device that the present embodiment provides comprises ito glass substrate 10 successively, light emitting functional layer 20, cathode layer 30, encapsulated layer 40, described encapsulated layer is carbonitride of silicium barrier layer 401, the stack combinations of the first inorganic barrier layer 402 and the second inorganic barrier layer 403 repeats 3 times and forms, wherein, the thickness on described carbonitride of silicium barrier layer 401 is 110nm, the thickness of described first inorganic barrier layer 402 is 15nm, the thickness of described second inorganic barrier layer 403 is 15nm.
The concrete structure of the organic electroluminescence device that the present embodiment provides can be expressed as ITO (100nm)/NPB:30wt%MoO
3(10nm)/TCTA (30nm)/TPBI:5wt% (Ir (ppy)
3) (20nm)/Bphen (10nm)/Bphen:30wt%CsN3/Al (100nm)/carbonitride of silicium (110nm)/B
2o
3(15nm)/HfO
2(15nm)/carbonitride of silicium (110nm)/B
2o
3(15nm)/HfO
2(15nm)/carbonitride of silicium (110nm)/B
2o
3(15nm)/HfO
2(15nm); Wherein, slash "/" represents layer structure, and " wt% " represents mass percent.
Water resistance (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package
2day) be 1.6 × 10
-6, the life-span is 25,008 hour.
Embodiment 2
A preparation method for organic electroluminescence device, comprises the following steps:
(1) on anode substrate, light emitting functional layer and cathode layer is prepared
With embodiment one;
(2) on cathode layer, encapsulated layer is prepared
A. the making on carbonitride of silicium barrier layer:
Using plasma strengthens chemical vapour deposition technique (PECVD) on described cathode layer surface deposition carbonitride of silicium barrier layer, the material on described carbonitride of silicium barrier layer is carbonitride of silicium, described deposit carbon silicon nitride barrier thickness be 140nm, in the process of described deposit carbon silicon nitride barrier, depositing temperature is 50 DEG C, and the source of the gas of employing is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), wherein, the flow of described MMS is 8sccm, described NH
3the ratio of/MMS is 24, described H
2flow be 205sccm;
B. the making of the first inorganic barrier layer:
On described carbonitride of silicium barrier layer, prepare the first inorganic barrier layer by the method for ald, the material of described first inorganic barrier layer is Al
2o
3, the thickness of described first inorganic barrier layer is 19nm, and depositing temperature is 50 DEG C, and the presoma of employing is Al (CH
3)
3and steam, described Al (CH
3)
3with the inert gas adopted between steam is N
2, described Al (CH
3)
320ms is all, described N with the injection length of steam
2injection length be 10s, described Al (CH
3)
3, steam and N
2flow be all 20sccm;
C. the making of the second inorganic barrier layer:
On described first inorganic barrier layer, prepare the second inorganic barrier layer by the method for ald, the material of described second inorganic barrier layer is ZrO
2, the thickness of described second inorganic barrier layer is 19nm, and depositing temperature is 50 DEG C, and the presoma of employing is Zr (N (CH
3)
2)
4and steam, described Zr (N (CH
3)
2)
4with the inert gas adopted between steam is N
2, described Zr (N (CH
3)
2)
41s and 40ms is respectively, described N with the injection length of steam
2injection length be 10s, described Zr (N (CH
3)
2)
4, steam and N
2flow be all 20sccm;
Alternately repeat to prepare carbonitride of silicium barrier layer, the first inorganic barrier layer and the second inorganic barrier layer 4 times, form encapsulated layer, obtain organic electroluminescence device.
Water resistance (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package
2day) be 1.3 × 10
-6, the life-span is 25,080 hour.
Embodiment 3
A preparation method for organic electroluminescence device, comprises the following steps:
(1) on anode substrate, light emitting functional layer and cathode layer is prepared
With embodiment one;
(2) on cathode layer, encapsulated layer is prepared
A. the making on carbonitride of silicium barrier layer:
Using plasma strengthens chemical vapour deposition technique (PECVD) on described cathode layer surface deposition carbonitride of silicium barrier layer, the material on described carbonitride of silicium barrier layer is carbonitride of silicium, described deposit carbon silicon nitride barrier thickness be 140nm, in the process of described deposit carbon silicon nitride barrier, depositing temperature is 40 DEG C, and the source of the gas of employing is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), wherein, the flow of described MMS is 6sccm, described NH
3the ratio of/MMS is 21, described H
2flow be 210sccm;
B. the making of the first inorganic barrier layer:
On described carbonitride of silicium barrier layer, prepare the first inorganic barrier layer by the method for ald, the material of described first inorganic barrier layer is Ga
2o
3, the thickness of described first inorganic barrier layer is 18nm, and depositing temperature is 40 DEG C, and the presoma of employing is Ga (CH
3)
3and steam, described Ga (CH
3)
3with the inert gas adopted between steam is N
2, described Ga (CH
3)
310ms is all, described N with the injection length of steam
2injection length be 5s, described Ga (CH
3)
3, steam and N
2flow be all 10sccm;
C. the making of the second inorganic barrier layer:
On described first inorganic barrier layer, prepare the second inorganic barrier layer by the method for ald, the material of described second inorganic barrier layer is HfO
2, the thickness of described second inorganic barrier layer is 15nm, and depositing temperature is 40 DEG C, and the presoma of employing is Hf (N (CH
3)
2)
4and steam, described Hf (N (CH
3)
2)
4with the inert gas adopted between steam is N
2, described Hf (N (CH
3)
2)
40.2s and 20ms is respectively, described N with the injection length of steam
2injection length be 5s, described Hf (N (CH
3)
2)
4, steam and N
2flow be all 10sccm;
Alternately repeat to prepare carbonitride of silicium barrier layer, the first inorganic barrier layer and the second inorganic barrier layer 3 times, form encapsulated layer, obtain organic electroluminescence device.
Water resistance (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package
2day) be 1.4 × 10
-6, the life-span is 25,050 hour.
Embodiment 4
A preparation method for organic electroluminescence device, comprises the following steps:
(1) on anode substrate, light emitting functional layer and cathode layer is prepared
With embodiment one;
(2) on cathode layer, encapsulated layer is prepared
A. the making on carbonitride of silicium barrier layer:
Using plasma strengthens chemical vapour deposition technique (PECVD) on described cathode layer surface deposition carbonitride of silicium barrier layer, the material on described carbonitride of silicium barrier layer is carbonitride of silicium, described deposit carbon silicon nitride barrier thickness be 130nm, in the process of described deposit carbon silicon nitride barrier, depositing temperature is 45 DEG C, and the source of the gas of employing is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), wherein, the flow of described MMS is 10sccm, described NH
3the ratio of/MMS is 20, described H
2flow be 190sccm;
B. the making of the first inorganic barrier layer:
On described carbonitride of silicium barrier layer, prepare the first inorganic barrier layer by the method for ald, the material of described first inorganic barrier layer is In
2o
3, the thickness of described first inorganic barrier layer is 16nm, and depositing temperature is 45 DEG C, and the presoma of employing is In (CH
3)
3and steam, described In (CH
3)
3with the inert gas adopted between steam is N
2, described In (CH
3)
315ms is all, described N with the injection length of steam
2injection length be 7s, described In (CH
3)
3, steam and N
2flow be all 17sccm;
C. the making of the second inorganic barrier layer:
On described first inorganic barrier layer, prepare the second inorganic barrier layer by the method for ald, the material of described second inorganic barrier layer is TiO
2, the thickness of described second inorganic barrier layer is 17nm, and depositing temperature is 45 DEG C, and the presoma of employing is Ti (N (CH
3)
2)
4and steam, described Ti (N (CH
3)
2)
4with the inert gas adopted between steam is N
2, described Ti (N (CH
3)
2)
40.3s and 30ms is respectively, described N with the injection length of steam
2injection length be 5s, described Ti (N (CH
3)
2)
4, steam and N
2flow be all 10sccm;
Alternately repeat to prepare carbonitride of silicium barrier layer, the first inorganic barrier layer and the second inorganic barrier layer 3 times, form encapsulated layer, obtain organic electroluminescence device.
Water resistance (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package
2day) be 1.5 × 10
-6, the life-span is 25,021 hour.
Embodiment 5
A preparation method for organic electroluminescence device, comprises the following steps:
(1) on anode substrate, light emitting functional layer and cathode layer is prepared
With embodiment one;
(2) on cathode layer, encapsulated layer is prepared
A. the making on carbonitride of silicium barrier layer:
Using plasma strengthens chemical vapour deposition technique (PECVD) on described cathode layer surface deposition carbonitride of silicium barrier layer, the material on described carbonitride of silicium barrier layer is carbonitride of silicium, described deposit carbon silicon nitride barrier thickness be 100nm, in the process of described deposit carbon silicon nitride barrier, depositing temperature is 55 DEG C, and the source of the gas of employing is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), wherein, the flow of described MMS is 4sccm, described NH
3the ratio of/MMS is 30, described H
2flow be 190sccm;
B. the making of the first inorganic barrier layer:
On described carbonitride of silicium barrier layer, prepare the first inorganic barrier layer by the method for ald, the material of described first inorganic barrier layer is Tl
2o
3, the thickness of described first inorganic barrier layer is 15nm, and depositing temperature is 55 DEG C, and the presoma of employing is Tl (CH
3)
3and steam, described Tl (CH
3)
3with the inert gas adopted between steam is N
2, described Tl (CH
3)
315ms is all, described N with the injection length of steam
2injection length be 7s, described Tl (CH
3)
3, steam and N
2flow be all 11sccm;
C. the making of the second inorganic barrier layer:
On described first inorganic barrier layer, prepare the second inorganic barrier layer by the method for ald, the material of described second inorganic barrier layer is ZrO
2, the thickness of described second inorganic barrier layer is 20nm, and depositing temperature is 55 DEG C, and the presoma of employing is Zr (N (CH
3)
2)
4and steam, described Zr (N (CH
3)
2)
4with the inert gas adopted between steam is N
2, described Zr (N (CH
3)
2)
40.4s and 25ms is respectively, described N with the injection length of steam
2injection length be 10s, described Zr (N (CH
3)
2)
4, steam and N
2flow be all 15sccm;
Alternately repeat to prepare carbonitride of silicium barrier layer, the first inorganic barrier layer and the second inorganic barrier layer 3 times, form encapsulated layer, obtain organic electroluminescence device.
Water resistance (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package
2day) be 1.0 × 10
-6, the life-span is 25,121 hours.
Embodiment 6
A preparation method for organic electroluminescence device, comprises the following steps:
(1) on anode substrate, light emitting functional layer and cathode layer is prepared
With embodiment one;
(2) on cathode layer, encapsulated layer is prepared
A. the making on carbonitride of silicium barrier layer:
Using plasma strengthens chemical vapour deposition technique (PECVD) on described cathode layer surface deposition carbonitride of silicium barrier layer, the material on described carbonitride of silicium barrier layer is carbonitride of silicium, described deposit carbon silicon nitride barrier thickness be 150nm, in the process of described deposit carbon silicon nitride barrier, depositing temperature is 47 DEG C, and the source of the gas of employing is methyl-monosilane (MMS), ammonia (NH
3) and hydrogen (H
2), wherein, the flow of described MMS is 7sccm, described NH
3the ratio of/MMS is 25, described H
2flow be 200sccm;
B. the making of the first inorganic barrier layer:
On described carbonitride of silicium barrier layer, prepare the first inorganic barrier layer by the method for ald, the material of described first inorganic barrier layer is for being B
2o
3, the thickness of described first inorganic barrier layer is 20nm, and depositing temperature is 47 DEG C, and the presoma of employing is B (CH
3)
3and steam, described B (CH
3)
3with the inert gas adopted between steam is N
2, described B (CH
3)
315ms is all, described N with the injection length of steam
2injection length be 7s, described B (CH
3)
3, steam and N
2flow be all 15sccm;
C. the making of the second inorganic barrier layer:
On described first inorganic barrier layer, prepare the second inorganic barrier layer by the method for ald, the material of described second inorganic barrier layer is TiO
2, the thickness of described second inorganic barrier layer is 20nm, and depositing temperature is 47 DEG C, and the presoma of employing is Ti (N (CH
3)
2)
4and steam, described Ti (N (CH
3)
2)
4with the inert gas adopted between steam is N
2, described Ti (N (CH
3)
2)
40.5s and 30ms is respectively, described N with the injection length of steam
2injection length be 7s, described Ti (N (CH
3)
2)
4, steam and N
2flow be all 20sccm;
Alternately repeat to prepare carbonitride of silicium barrier layer, the first inorganic barrier layer and the second inorganic barrier layer 5 times, form encapsulated layer, obtain organic electroluminescence device.
Water resistance (WVTR, the g/m of the organic electroluminescence device after the present embodiment composite package
2day) be 1.1 × 10
-6, the life-span is 25,100 hours.
To sum up, the preparation method of organic electroluminescence device provided by the invention can reduce steam and oxygen effectively to the erosion of organic electroluminescence device, improves the life-span of organic electroluminescence device significantly, and cathode layer can be protected to exempt from destruction.
Encapsulation rete compactness is most important, can select suitable process conditions according to device detection result.The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications are also considered as protection scope of the present invention.
Claims (10)
1. an organic electroluminescence device, comprise the anode conducting substrate, light emitting functional layer, cathode layer and the encapsulated layer that stack gradually, it is characterized in that, described encapsulated layer comprises at least one encapsulation unit, described encapsulation unit comprises carbonitride of silicium barrier layer that lamination successively arranges, the first inorganic barrier layer and the second inorganic barrier layer, the material on described carbonitride of silicium barrier layer is carbonitride of silicium compound, the material of described first inorganic barrier layer is the oxide of III A race metal, and the material of described second inorganic barrier layer is the oxide of IV B race metal.
2. organic electroluminescence device as claimed in claim 1, it is characterized in that, the oxide of described III A race metal is diboron trioxide, alundum (Al2O3), gallic oxide, indium sesquioxide or thallic oxide, and the oxide of described IV B race metal is titanium dioxide, zirconium dioxide or hafnium oxide.
3. organic electroluminescence device as claimed in claim 1, it is characterized in that, the thickness on described carbonitride of silicium barrier layer is 150nm ~ 200nm, and the thickness of described first inorganic barrier layer is 15nm ~ 20nm, and the thickness of described second inorganic barrier layer is 15nm ~ 20nm.
4. organic electroluminescence device as claimed in claim 1, it is characterized in that, described encapsulation unit repeats to arrange 3 ~ 5 times.
5. organic electroluminescence device as claimed in claim 1, it is characterized in that, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
(1) anode pattern preparing organic electroluminescence device on the electrically-conductive backing plate of cleaning forms anode conducting substrate; The method of vacuum evaporation is adopted to prepare light emitting functional layer and cathode layer on anode conducting substrate;
(2) on cathode layer, prepare encapsulated layer, described encapsulated layer comprises at least one encapsulation unit, and the preparation method of described encapsulation unit is as follows:
The making on (a) carbonitride of silicium barrier layer:
Using plasma strengthens chemical vapour deposition technique on described cathode layer surface deposition carbonitride of silicium barrier layer, the material on described carbonitride of silicium barrier layer is carbonitride of silicium compound, in the process of described deposit carbon silicon nitride barrier, depositing temperature is 40 ~ 60 DEG C, the source of the gas adopted is methyl-monosilane, ammonia and hydrogen, and wherein, the flow of described hydrogen is 190 ~ 210sccm, the flow of described methyl-monosilane is 4 ~ 10sccm, and the flow of described ammonia is 20 ~ 30 times of described methyl-monosilane flow;
(b) first making of inorganic barrier layer:
On described carbonitride of silicium barrier layer, the first inorganic barrier layer is deposited by the method for ald, the material of described first inorganic barrier layer is the oxide of III A race metal, in the process of described deposition first inorganic barrier layer, depositing temperature is 40 ~ 60 DEG C, the presoma adopted is tri-methylated compound and the steam of III A race metal, the described tri-methylated compound of III A race metal and the injection length of steam are all 10 ~ 20ms, interval inert gas injecting between the two, the injection length of described inert gas is 5 ~ 10s, the tri-methylated compound of described III A race metal, the flow of steam and inert gas is all 10 ~ 20sccm,
(c) second making of inorganic barrier layer:
On described first inorganic barrier layer, the second inorganic barrier layer is deposited by the method for ald, obtain organic electroluminescence device, wherein, the material of described second inorganic barrier layer is the oxide of IV B race metal, in the process of described deposition second inorganic barrier layer, depositing temperature is 40 ~ 60 DEG C, the presoma adopted is four (dimethyl amido) compound and steam of IV B race metal, described four (dimethyl amido) compounds of IV B race metal and the injection length of steam are respectively 0.2 ~ 1s and 20 ~ 40ms, interval inert gas injecting between the two, the injection length of described inert gas is 5 ~ 10s, four (dimethyl amido) compound of described IV B race metal, steam and inert gas flow be all 10 ~ 20sccm.
7. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, in described step (b), the tri-methylated compound of described III A race metal is tri-methylated boron, tri-methylated aluminium, tri-methylated gallium, tri-methylated indium or tri-methylated thallium, and the oxide of described III A race metal is diboron trioxide, alundum (Al2O3), gallic oxide, indium sesquioxide or thallic oxide; In described step (c), four (dimethyl amido) compound of described IV B race metal is four (dimethyl amido) titanium, four (dimethyl amido) zirconiums or four (dimethyl amido) hafnium, and the oxide of described IV B race metal is titanium dioxide, zirconium dioxide or hafnium oxide.
8. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, the thickness on described silicon oxynitride barrier layer is 150nm ~ 200nm, and the thickness of described first inorganic barrier layer is 15nm ~ 20nm, and the thickness of described second inorganic barrier layer is 15nm ~ 20nm.
9. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, described encapsulation unit repeats to arrange 3 ~ 5 times.
10. the preparation method of organic electroluminescence device as claimed in claim 6, it is characterized in that, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658389A (en) * | 2017-09-28 | 2018-02-02 | 武汉华星光电半导体显示技术有限公司 | Inoranic membrane and packaging film |
-
2013
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107658389A (en) * | 2017-09-28 | 2018-02-02 | 武汉华星光电半导体显示技术有限公司 | Inoranic membrane and packaging film |
| US10784464B2 (en) | 2017-09-28 | 2020-09-22 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Inorganic film and encapsulating film |
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