CN104503077A - Opto-electronic hybrid system realizing quantum coherence - Google Patents

Opto-electronic hybrid system realizing quantum coherence Download PDF

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CN104503077A
CN104503077A CN201410836038.2A CN201410836038A CN104503077A CN 104503077 A CN104503077 A CN 104503077A CN 201410836038 A CN201410836038 A CN 201410836038A CN 104503077 A CN104503077 A CN 104503077A
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chamber
mirror
detection light
field
cavity
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CN104503077B (en
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王中阳
秦立国
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Shanghai Advanced Research Institute of CAS
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Shanghai Advanced Research Institute of CAS
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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The invention provides an opto-electronic hybrid system realizing quantum coherence. The system comprises a fixed cavity mirror, a movable cavity mirror and a charge body; an optical cavity provided with cold atom cloud is formed between the fixed cavity mirror and the movable cavity mirror, and the movable cavity mirror is filled with charge; probe light is injected into the optical cavity; the charge body forms capacitive coupling with the movable cavity mirror; a current generator is electrically connected with the charge body so as to inject charge. Quantity of injected charge is regulated so as to control coulomb force between the charge body and the charge on the movable cavity mirror, then the movable cavity mirror is controlled to move relative to the fixed cavity mirror, and intensity of a cavity field generated in the optical cavity due to external action is changed, as a consequence, a quantized cavity field serving a control field is changed, then interaction between the probe light and atoms in the atom cloud is regulated coherently according to the change of the cavity field intensity, and storage/retrieval of information included in the probe light in the cold atoms or on/off of a probe light transmission path is realized. The system has the advantage of high integration of electronic control, has a cavity quality regulation function and realizes quantum memory by cavity induced transparency.

Description

A kind of Opto-electronic system realizing quantum coherent
Technical field
The present invention relates to Technique on Quantum Communication field, particularly relate to a kind of Opto-electronic system realizing quantum coherent.
Background technology
This constantly increases the epoch of global message exchange at present, also more and more stronger to the requirement of safety and high-speed traffic technology, such as: light quantum communication network.Such communication network, challenge maximum is at present distance and module integrated.As the photon most possibly becoming Future Information carrier have an optimistic view of by scientists, but due to the interaction of photon and external environment condition, quantum decoherence is larger, more difficult application.The quantum repeater stored based on quantum like this becomes the gordian technique overcoming long distance.Quantum storage shows in quantum calculation, quantum communications, the core status in the quantum message areas such as quantum network.The integrated previous urgent need of order that becomes how realizing quantum memory module wants a technical solution difficult problem.The mechanism stored about quantum at present roughly has three main schemes:
1, based on the memory mechanism of stimulated Raman transition, larger resonance off resonance Δ > > γ d between light field and transition energy level, is had; γ is the optical depth of the attenuation coefficient of upper energy level, d storage medium.Photon is left in metastable state by stimulated Raman transition by absorption | on 3i>.
2, electromagnetically induced transparent (EIT) mechanism, the dipole transition of light field and atom is the Δ < < γ d of Near resonance oscillating.Controlling filed is utilized for signal field and opens a special transparent window, in this way, signal field is propagated with a group velocity reduced in media as well, this speed can make it be reduced to zero by regulable control field, optical information is transferred to the spin state of medium by what be concerned with from light field, is namely coherently stored on the spin state of atom.
3, photon echo mechanism: by applying a short fast resonance π pulse, mapping and exciting the excited state from instability | e> is to stable ground state | s>.
Current storage scheme is all utilize above three kinds of mechanism substantially, and be all classical light regulate and control method, the research group of every country also mainly stresses research and how to improve research storage efficiency and on storage time in the world, and so its optimal storage efficiency is depended primarily on its light field optical depth in storage medium by demonstration.Current glazing regulation and control are main with acoustooptic modulation or PZT method.Acoustooptic modulation, due to the problem in its technical scheme, is difficult to be integrated in module, even if can realize also needs being solved a lot of practical problems; And PZT drives method, though facilitate integrated, for field, quantized chamber, even if utilize most high-quality to reach the ultimate value of PZT, its sensitivity and repeatable accuracy are also be difficult to reach requirement in practice.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of Opto-electronic system realizing quantum coherent, to be moved the regulation and control realized quantum light field in chamber by the sensitive mechanical of electric control, solve the integrated difficulty of quantum memory module, sensitivity and accuracy requirement in prior art and to be beyond one's reach problem.
For realizing above-mentioned target and other related objectives, the invention provides a kind of Opto-electronic system realizing quantum coherent, comprise: the lock chamber mirror be oppositely arranged and removable chamber mirror, form the optics cavity being provided with cold atomic group between the two, described removable chamber mirror is filled with electric charge; Detection light is injected in described optics cavity; Electric charge body, and form capacitive couplings between the mirror of described removable chamber; External circuit, comprising: current feedback circuit; Described current feedback circuit, be electrically connected described electric charge body, for to described electric charge body iunjected charge, and control described electric charge body with the Coulomb force on the mirror of described removable chamber between electric charge, to control the displacement of described removable chamber mirror relative lock chamber mirror by the quantity of electric charge of the described injection of adjustment; Described optics cavity changes cavity length because of described displacement, make described optics cavity internal cause external action and the intensity of the field, chamber produced changes, coherently regulate and control the interaction between described detection light and described atomic group Atom according to the change of described chamber field strength, realize the storage/access of information in described cold atom that described detection light is comprised or the on/off to described detection light transmission path.
Optionally, described realization is to the storage/access of information in described detection light, comprise: 1) field, described chamber is produced by the incident field effect of resonating with described optics cavity, the field strength change of described chamber makes to lose resonance between optics cavity and incident field and off resonance reduces photon numbers in optics cavity, makes described detection light and cold atom interact and the information transfer in detection light to the spin state of atom assemblage is stored; Or 2) make described chamber field strength carry out 1 by the displacement controlling described removable chamber mirror) in the Back Up of chamber field strength change, the information transfer that the spin state of atom assemblage is stored is to detecting light.
Optionally, described realization is to the on/off of described detection light transmission path, comprise: when described chamber field strength is enhanced to more than the first intensity level, form transparent window with the interaction of tamper detection light and atom, detection light is transmitted through described atom without absorption; Or when described chamber field strength weakens to lower than the second intensity level, make detection light by described Atomic absorption.
Optionally, the generation type of described transparent window comprise following in one: A) formed by the incident field effect of resonating with described optics cavity; B), when described optics cavity is vacuum, formed by the Rabi splitting effect of vacuum induced.
Optionally, described A) in the intensity of field, chamber that formed of the incidence because of incident field be greater than described detection light form the intensity of light field.
Optionally, described removable chamber mirror is electrifiable nano-machine oscillator, and the movement of described moveable mirror is also subject to the effect of optical pressure and external thermal environments.
Optionally, described lock chamber mirror is light entrance face towards the first wall outside chamber, and described lock chamber mirror is reflecting surface towards the second wall in chamber; Described removable chamber mirror is filled with electric charge towards the 3rd wall outside chamber, and it is reflecting surface towards the 4th wall in chamber; Corresponding described 3rd wall of described electric charge body arrange and with its maintenance preset distance.
Optionally, described cold atomic group is Three-level Atom group.
Optionally, described external circuit also comprises: for launching the storage laser of described detection light, described storage laser connects described current feedback circuit by synchronous generator.
Optionally, described current feedback circuit is current pulser.
As mentioned above, the invention provides a kind of Opto-electronic system realizing quantum coherent, comprising: the lock chamber mirror be oppositely arranged and removable chamber mirror, form the optics cavity being provided with cold atomic group between the two, described removable chamber mirror is filled with electric charge; Detection light is injected in described optics cavity; Electric charge body, and form capacitive couplings between the mirror of described removable chamber; External circuit, comprising: current feedback circuit; Described current feedback circuit, be electrically connected described electric charge body, for to described electric charge body iunjected charge, and control described electric charge body with the Coulomb force on the mirror of described removable chamber between electric charge, to control the displacement of described removable chamber mirror relative lock chamber mirror by the quantity of electric charge of the described injection of adjustment; Described optics cavity changes cavity length because of described displacement, make described optics cavity internal cause external action and the intensity of the field, chamber produced changes, coherently regulate and control the interaction between described detection light and described atomic group Atom according to the change of described chamber field strength, realize the storage/access of information in described cold atom that described detection light is comprised or the on/off to described detection light transmission path; The present invention has the highly integrated advantage of electric control, chamber quality regulatory function and stores with the transparent quantum that realizes of chamber induction.
Accompanying drawing explanation
Fig. 1 is shown as the structural representation realizing the Opto-electronic system of quantum coherent in one embodiment of the invention.
Fig. 2 is shown as the principle schematic of the cold Three-level Atom group transition in one embodiment of the invention.
Fig. 3 a is shown as the time dependent coordinate schematic diagram of charge number in the Opto-electronic system in one embodiment of the invention on electric charge body.
Fig. 3 b is shown as the time dependent coordinate schematic diagram of Opto-electronic system lumen field strength in one embodiment of the invention.
Fig. 3 c is shown as the time dependent coordinate schematic diagram of mixing angle in the Opto-electronic system in one embodiment of the invention.
Fig. 3 d is shown as the time dependent coordinate schematic diagram of the group velocity of probe field in storage medium in the Opto-electronic system in one embodiment of the invention.
Fig. 4 a and 4b Opto-electronic system be shown as in one embodiment of the invention realizes the schematic diagram of the information storage/access function of quantum communications.
Element numbers explanation
1 lock chamber mirror
2 removable chamber mirrors
3 cold atomic groups
4 incident fields
5 detection light fields
6 electric charge bodies
7 current feedback circuits
8 synchronous generators
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this instructions can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this instructions also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.
As shown in Figure 1, the invention provides a kind of Opto-electronic system realizing quantum coherent, comprise: the lock chamber mirror 1 and the removable chamber mirror 2 that are oppositely arranged (being preferably opposing parallel setting), form the optics cavity being provided with cold atomic group 3 between the two, described removable chamber mirror 2 is filled with electric charge; Detection light is injected in described optics cavity; Electric charge body 6, and form capacitive couplings between described removable chamber mirror 2; External circuit, comprising: current feedback circuit 7; Described current feedback circuit 7, be electrically connected described electric charge body 6, for to described electric charge body 6 iunjected charge, and control described electric charge body 6 with the Coulomb force on described removable chamber mirror 2 between electric charge, to control relative lock chamber mirror 1 displacement of described removable chamber mirror 2 by the quantity of electric charge of the described injection of adjustment; Described optics cavity changes cavity length because of described displacement, make described optics cavity internal cause external action and the intensity of the field, chamber produced changes, coherently regulate and control the interaction between described detection light and described atomic group Atom according to the change of described chamber field strength, realize the storage/access of information in described cold atom that described detection light is comprised or the on/off to described detection light transmission path.
In one embodiment, described realization, to the storage/access of information in described detection light, comprising:
1) field, described chamber is acted on by the incident field 4 resonated with described optics cavity and producing, the field strength change of described chamber makes lose resonance between optics cavity and incident field 4 and reduce photon numbers in optics cavity, makes described detection light and cold atom interact and the information transfer in detection light to the spin state of atom assemblage is stored;
Or 2) make described chamber field strength carry out 1 by the displacement controlling described removable chamber mirror 2) in the Back Up of chamber field strength change, the information transfer that the spin state of atom assemblage is stored is to detecting light.
In one embodiment, described realization is to the on/off of described detection light transmission path, comprise: when described chamber field strength is enhanced to more than the first intensity level, form transparent window with the interaction of tamper detection light and atom, detection light is transmitted through described atom without absorption; Or when described chamber field strength weakens to lower than the second intensity level, make detection light by described Atomic absorption.
In one embodiment, the generation type of described transparent window comprise following in one: A) acted on by the incident field 4 resonated with described optics cavity and formed; B), when described optics cavity is vacuum, formed by the Rabi splitting effect of vacuum induced.
Concrete, based on EIT quantum memory mechanism, in conjunction with the optics cavity of high-quality, optics regulable control field in EIT memory mechanism is regulated the quality factor in chamber with being converted to electric control, namely regulating chamber field strength or stiffness of coupling to instead of the adjustment of controlling filed in EIT, realizing quantum storage or switch feature by regulating the electric control of chamber wall.
The structure of optics cavity is described by a specific embodiment, and as shown in Figure 1, described lock chamber mirror 1 is light entrance face towards the first wall outside chamber, described lock chamber mirror 1 is reflecting surface towards the second wall in chamber, such as caesium bubble wall, it has high reflectance, and almost the light of 99.9% is all reflected; Described removable chamber mirror 2 is filled with such as positive charge towards the 3rd wall outside chamber and (sets electricity as Q mr), then electric charge body 6 correspond to negative charge and form above-mentioned capacitive couplings, vice versa; Described removable chamber mirror 2 is reflecting surface towards the 4th wall in chamber, such as caesium bubble wall; Preferably, described removable chamber mirror 2 can be electrifiable nano-machine oscillator, if its quality is m, vibration frequency is ω m, ratio of damping is γ m; Adopt this sensitive mechanical vibrator to be to realize the quick response of field, chamber in storing fast, and the response of Piezoelectric Ceramic is too slow, repeatable accuracy is not high yet; If the length in chamber is L, frequency is wherein c is the light velocity, and n is integer; Have incident field 4 ( ) in situation, putting to inciding in optics cavity from the left side along vertical and lock chamber mirror 1, frequency is set to ω 0, the detection light field 5 of the detection light that relative intensity is more weak ( ) to incide in optics cavity along z-axis from the direction of chamber mirror and interact with atom assemblage, its frequency is set to ω p.
In one embodiment, it is V that the Three-level Atom of putting N number of cold Λ type in described optics cavity rolls into a ball its volume.Its energy level transition principle is as shown in Figure 2: | a>, | b>, | c> is the three-level of atom, can select 87three energy levels of Rb:
|a>=|5 2P 1/2,F=2>,|b>=|5 2S 1/2,F=1>,|c>=|5 2S 1/2,F=2>;
Incident field 4 ( ) incide in optics cavity by resonance, form field, chamber, if detection light field 5 ( ) and atom | a>, | the dipole transition between b> is coupled, and stiffness of coupling is g p, off resonance is Δ p, field, chamber and | a>, | the dipole transition between c> is coupled, and stiffness of coupling is g, and off resonance is on δ, figure for the annihilations operator of photon number in chamber, field, chamber is quantized.
Near mechanical vibrator, there is one (to set electricity to be-n with its oppositely charged at a distance of the place of r qe) electric charge body 6 (n qthe charge number of band on electric charge body 6), electric charge body 6 is connected with described current feedback circuit 7, and preferably, described current feedback circuit 7 is current pulsers; Preferably, current pulser is connected with the storage laser for launching described detection light by synchronous generator 8, thus realizes the displacement synchronous of the removable chamber mirror 2 that the detection transmitting of light and described current feedback circuit 7 control; Electric charge on electric charge body 6 can be injected by current feedback circuit 7, so current feedback circuit 7 controls the electricity on electric charge body 6, and these electricity directly affect the Coulomb force between this mechanical vibrator and electric charge body 6, thus control the displacement of mechanical vibrator, achieve the control to cavity length, and realize the control to field, chamber.
Mobile main source and two aspects for nano-machine oscillator (getting final product mobile cavity mirror 2): one is optical pressure and outside thermal environment, and the yardstick of its movement is greatly about 10 -3→ 10 -8nm, its yardstick little, can ignore; The Coulomb force of electric charge body 6 to removable chamber mirror 2 on the other hand; By calculating, the average displacement of removable chamber mirror 2 movement wherein so the charge number n that the displacement of removable chamber mirror 2 and electric charge body 6 are with qbe directly proportional.Because the displacement of removable chamber mirror 2 is moved, so the cavity length of optics cavity changes, the frequency in chamber also changes accordingly, when incident field 4 is constant, incident field 4 and optics cavity no longer resonate, in chamber also there is corresponding change in photon number thereupon, through calculating average photon number in chamber is: wherein ε cbe the intensity of incident field 4, κ is the attenuation coefficient in chamber, off resonance it is photodynamics stiffness of coupling.As long as can be found out by the formula of average photon number regulates charge number on electric charge body 6 just can photon number, the i.e. change of field, chamber in control both optical chamber; Effective quality factor of optics cavity can be written as: so the quality factor in chamber can pass through the dynamic (dynamical) adjustment of external circuit.When the interactional time scale of transition that atom is compared in the change of field, chamber is very large, field, chamber can be considered that constant is Adiabatic Evolution, and propagation equation, electric control dark-state polariton (solution of its propagation equation) and the group velocity in medium that now detection light field 5 is propagated in atom assemblage are respectively:
( &PartialD; &PartialD; t + c &PartialD; &PartialD; z ) E ^ p = - g p 2 N g 2 ( n ^ + 1 ) &PartialD; &PartialD; t E ^ p ,
&Psi; ^ = cos &theta; E ^ p - sin &theta; N &sigma; ^ bc ,
v g=ccos 2θ,
Wherein θ stores the mixing angle between photon state and storage medium spin state:
tan 2 &theta; = g p 2 N g 2 ( n &OverBar; + 1 ) = g p 2 N g 2 ( | &epsiv; c | 2 &kappa; 2 + ( 2 G 0 &eta; n q m &omega; m 2 ) 2 + 1 ) .
Can know thus, when in chamber, photon number modulation goes to zero, group velocity will level off to zero, and information is stored on the spin state of atom assemblage.By the equation of dark-state polariton can draw by modulated external circuit realiration will store information MAP on the spin state of storage medium.
In conjunction with foregoing, the characteristic functions such as storage, photoswitch of the present invention's realization is carried out to the detailed explanation of Principle of Process:
Store:
See also Fig. 1 to Fig. 4 b, originally incident field 4 vertical be injected in optics cavity along x-axis by resonating with optics cavity, removable mirror, as the high-sensitive mechanical vibrator of one, under the effect of optical pressure, does the simple harmonic motion that Amplitude Comparison is little.Interact because the medium stored in field, chamber and chamber exists dipole transition, detection light (or store light, sent by described storage laser) before incidence, field, chamber makes atom assemblage by pumping as a kind of pump field, nearly all atom all cloth according in ground state.Afterwards, light field 5 is detected enter in chamber along z-axis, interact with the atom assemblage in chamber.
As shown in fig. 4 a, the current feedback circuit 7 be connected by synchronous generator 8 produces the current impulse of Gauss, makes that electric charge body 6 assembles electric charge and shows; As shown in Figure 3 a, along with increasing of charge number on electric charge body 6, the Coulomb force between oscillator and electric charge body 6 strengthens, and under the effect of Coulomb force, the displacement of oscillator changes, large many of the displacement of the oscillator mechanical vibration that this displacement causes than optical pressure.Therefore under the effect of current impulse, the length of field, chamber changes, and makes the light field of resonance incidence produce off resonance.Because the time scale of the gathering of mechanical vibrator (can mobile cavity mirror 2) vibration and electric charge is controlled, its time scale is long more a lot of than the time scale of light and atomic interaction, it is one engineering slowly, as shown in Figure 3 b, therefore the photon number in chamber also because of off-resonance off resonance, moves slowly along with oscillator and reduces slowly; As illustrated in figures 3 c and 3d, interacted by the dipole transition of atom assemblage and light field in chamber, in this, change causes the reduction of the group velocity storing light in chamber, when photon number in chamber less to zero time, group velocity is also reduced to zero accordingly, from the formula of dark-state polariton, in like manner we also can show that information has been transferred to the spin state in atom assemblage from light field, reaches the storage purpose of optical information.
After storage, as shown in Figure 4 b, current feedback circuit 7 produces the contrary current impulse in a direction, electric charge on electric charge body 6 is neutralized, to reduce, due to the restoring force of oscillator, oscillator will restore lentamente thereupon, incident field 4 also re-injects in optics cavity because of resonance, and in chamber, photon number also increases thereupon lentamente.Store the group velocity of light and become greatly thereupon, be stored in information on atom assemblage spin state also gradually convert back light field be removed.The storage of this information and reading are a kind of reversible processes, also can be referred to as the inverting change procedure of time.So just achieve the storage with electric current Pulse Width Control quantum information and reading process.
Photoswitch:
In above-mentioned storing process, when field, chamber runs up to a certain degree time, field, chamber forms a kind of control light by force, and the interaction of detection light field 5 and atom is by the destruction of being concerned with, formed detection light field 5 transparent window, detection light field 5 by without absorb through atomic medium.Along with the increase of charge number, field, chamber reduces slowly, and most back cavity field levels off to zero, i.e. the high field of strong coupling disappears, and detection light field 5 will be absorbed by atomic medium, cannot through medium.Therefore the Push And Release that the control realization of current impulse detection light field 5 absorbs is passed through, i.e. optical beam switches.
So it should be noted that, incident field 4 is also inessential, above-mentioned two situations are carried out under the condition having incident field 4, but when the quality factor in chamber is very high time, (impact of surrounding environment is subject to time field, chamber is vacuum, the field, chamber of minute quantity may be had) in chamber, time the stiffness of coupling of field, chamber and atomic interaction is very high, time the Rabi splitting of vacuum induced is enough to make the transparent window of detection light field 5 enough wide, transparent also can being used for of this vacuum induced does quantum storage and optical beam switches, and without the need to incident field.
In one embodiment, to the cavity without incident field, field, quantized chamber mainly comes from the Raman Process of vacuum induced, obtain quantum to store or photoswitch, will obtain inducing transparent enough wide transparent window, this will need the chamber of enough high-quality, obtain enough strong stiffness of coupling, scheme works is in the region of Vacuum Rabi splitting, and store for quantum, the window of the Rabi splitting of its vacuum induced is enough wide.Wherein storing and reading is realized the adjustment of field, chamber by electric pulse, chamber quality factor Q = &omega; c / &kappa; 2 + &Delta; ex 2 Regulate stiffness of coupling
The present invention program distinguishes with traditional EIT scheme: the adjustment of (1) traditional E IT scheme mainly goes to regulate stronger control light (controlling the intensity of light much larger than the detection light stored) by the method for optics; Such as acoustooptic modulation (AOM) method mainly for the control of strong classical light.This programme is mainly for the adjustment of field, quantized chamber, stiffness of coupling.(2) to weak incident field 4 (the several order of magnitude less of traditional scheme), our storage scheme is transparent based on chamber induction, does not also have this respect to report scheme at present in the world according to our grasp.(3) integrated: traditional AOM scheme cannot integrated module, and this programme realizes the movement of chamber wall by current impulse, reach and regulate the object of the quality in chamber thus being coupled of effective control chamber field and atom assemblage.In constant and weak incident field 4 situation, the quantum obtaining detection light field 5 based on EIT mechanism stores.This automatically controlled scheme is more conducive to integrated and miniaturization.
In sum, the invention provides a kind of Opto-electronic system realizing quantum coherent, comprising: the lock chamber mirror be oppositely arranged and removable chamber mirror, form the optics cavity being provided with cold atomic group between the two, described removable chamber mirror is filled with electric charge; Detection light is injected in described optics cavity; Electric charge body, and form capacitive couplings between the mirror of described removable chamber; External circuit, comprising: current feedback circuit; Described current feedback circuit, be electrically connected described electric charge body, for to described electric charge body iunjected charge, and control described electric charge body with the Coulomb force on the mirror of described removable chamber between electric charge, to control the displacement of described removable chamber mirror relative lock chamber mirror by the quantity of electric charge of the described injection of adjustment; Described optics cavity changes cavity length because of described displacement, make described optics cavity internal cause external action and the intensity of the field, chamber produced changes, coherently regulate and control the interaction between described detection light and described atomic group Atom according to the change of described chamber field strength, realize the storage/access of information in described cold atom that described detection light is comprised or the on/off to described detection light transmission path; The present invention has the highly integrated advantage of electric control, chamber quality regulatory function and stores with the transparent quantum that realizes of chamber induction.
The present invention compared with prior art, has following apparent outstanding substantive distinguishing features and technique effect:
(1) there is the highly integrated advantage of electric control: utilize sensitive corresponding nano-machine oscillator and optical microcavity fast, the present invention is by designing dexterously, achieve electricity consumption to store and the control of optical beam switches quantum, namely achieve storage to quantum information and reading by pulsed emission current.Then loaded down with trivial details light regulable control can be replaced by power consumption control.The improvement of this control, by the progress advancing quantum to be stored in integrated and microminiaturized aspect greatly.Quantum is stored in quantum communications, quantum network and quantum calculation and plays a part core, its integrated development, will promote greatly in the possibility of quantum information technology in practical application.
(2) there is the function of chamber product quality regulate: because nano-machine oscillator is as a chamber wall in chamber, realize the control to nano-machine oscillator chamber wall by electric field, effectively can realize the adjustment to chamber quality factor, and be a kind of dynamic (dynamical) modulation.When chamber and incident field and interatomic dipole transition resonate, the quality in chamber is the highest, and stimulative substance interacts and enters strong coupling, and along with the movement of oscillator, chamber off resonance becomes large, and quality reduces, and interacts and reduces.Thus the effective relevant effect regulated in chamber between stimulative substance.
(3) first time utilizes chamber to induce the transparent quantum that realizes to store: the present invention program's lumen field is quantized, but not Classical Fields, transparent window is wherein produced by the induction of field, chamber.This programme is that the mechanism application of being induced in chamber first time stores with quantum as far as we know.But when in the chamber of a ultrahigh quality, when stiffness of coupling is very high, when the transparent window of vacuum induced Rabi splitting is enough wide, can be operated in vacuum induced transparent region, this situation is at present or a kind of challenge.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.

Claims (10)

1. realize an Opto-electronic system for quantum coherent, it is characterized in that, comprising:
The lock chamber mirror be oppositely arranged and removable chamber mirror, form the optics cavity being provided with cold atomic group between the two, described removable chamber mirror is filled with electric charge; Detection light is injected in described optics cavity;
Electric charge body, and form capacitive couplings between the mirror of described removable chamber;
External circuit, comprising: current feedback circuit; Described current feedback circuit, be electrically connected described electric charge body, for to described electric charge body iunjected charge, and control described electric charge body with the Coulomb force on the mirror of described removable chamber between electric charge, to control the displacement of described removable chamber mirror relative lock chamber mirror by the quantity of electric charge of the described injection of adjustment; Described optics cavity changes cavity length because of described displacement, make described optics cavity internal cause external action and the intensity of the field, chamber produced changes, coherently regulate and control the interaction between described detection light and described atomic group Atom according to the change of described chamber field strength, realize the storage/access of information in described cold atom that described detection light is comprised or the on/off to described detection light transmission path.
2. the Opto-electronic system realizing quantum coherent according to claim 1, is characterized in that, described realization, to the storage/access of information in described detection light, comprising:
1) field, described chamber is produced by the incident field effect of resonating with described optics cavity, the field strength change of described chamber makes lose resonance between optics cavity and incident field and reduce photon numbers in optics cavity, makes described detection light and cold atom interact and the information transfer in detection light to the spin state of atom assemblage is stored; Or
2) displacement by controlling described removable chamber mirror makes described chamber field strength carry out 1) in the Back Up of chamber field strength change, the information transfer that the spin state of atom assemblage is stored is to detecting light.
3. the Opto-electronic system realizing quantum coherent according to claim 1, is characterized in that, described realization, to the on/off of described detection light transmission path, comprising:
When described chamber field strength is enhanced to more than the first intensity level, form transparent window with the interaction of tamper detection light and atom, detection light is transmitted through described atom without absorption; Or
When described chamber field strength weakens to lower than the second intensity level, make detection light by described Atomic absorption.
4. the Opto-electronic system realizing quantum coherent according to claim 3, is characterized in that, the generation type of described transparent window comprise following in one:
A) formed by the incident field effect of resonating with described optics cavity;
B), when described optics cavity is vacuum, formed by the Rabi splitting effect of vacuum induced.
5. the Opto-electronic system realizing quantum coherent according to claim 4, is characterized in that, described A) in the intensity of incident field be greater than described detection light form the intensity of light field.
6. the Opto-electronic system realizing quantum coherent according to claim 1, is characterized in that, described removable chamber mirror is electrifiable nano-machine oscillator, and the movement of described moveable mirror is also subject to the effect of optical pressure and external thermal environments.
7. the Opto-electronic system realizing quantum coherent according to claim 1, is characterized in that, described lock chamber mirror is light entrance face towards the first wall outside chamber, and described lock chamber mirror is reflecting surface towards the second wall in chamber; Described removable chamber mirror is filled with electric charge towards the 3rd wall outside chamber, and it is reflecting surface towards the 4th wall in chamber; Corresponding described 3rd wall of described electric charge body arrange and with its maintenance preset distance.
8. the Opto-electronic system realizing quantum coherent according to claim 1, is characterized in that, described cold atomic group is Three-level Atom group.
9. the Opto-electronic system realizing quantum coherent according to claim 1, it is characterized in that, described external circuit also comprises: for launching the storage laser of described detection light, described storage laser connects described current feedback circuit by synchronous generator.
10. the Opto-electronic system realizing quantum coherent according to claim 1, is characterized in that, described current feedback circuit is current pulser.
CN201410836038.2A 2014-12-24 2014-12-24 A kind of Opto-electronic system realizing quantum coherent Active CN104503077B (en)

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