CN104501792A - Double-shaft split type differential silicon micromachined resonant accelerometer - Google Patents
Double-shaft split type differential silicon micromachined resonant accelerometer Download PDFInfo
- Publication number
- CN104501792A CN104501792A CN201410789858.0A CN201410789858A CN104501792A CN 104501792 A CN104501792 A CN 104501792A CN 201410789858 A CN201410789858 A CN 201410789858A CN 104501792 A CN104501792 A CN 104501792A
- Authority
- CN
- China
- Prior art keywords
- mass
- upper layer
- silicon
- resonator
- minor structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5607—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
- G01C19/5621—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks the devices involving a micromechanical structure
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a double-shaft split type differential silicon micromachined resonant accelerometer which comprises an upper-layer silicon micromechanical structure and a lower-layer glass base, wherein the upper-layer silicon micromechanical structure is bonded on the glass base, the upper-layer silicon micromechanical structure consists of four upper-layer silicon micromechanical sub-structures which are completely identical, the upper-part structure and the lower-part structure at the left side form one group of differential structures for measuring an acceleration in a Y direction, and the upper-part structure and the lower-part structure at the right side form another group of differential structures for measuring an acceleration in an X direction. According to the double-shaft split type differential silicon micromachined resonant accelerometer disclosed by the invention, common mode errors between two groups of two resonators forming the differential structures can be effectively inhibited, the coupling influence between the two resonators is eliminated, and the decoupling between the X direction and the Y direction can be realized.
Description
Technical field
The present invention relates to a kind of twin shaft split type difference silicon micro-resonance type acceleration inertial sensor, belong to MEMS (micro electro mechanical system) (MEMS) and micro-inertia measuring technical field.
Background technology
Since the eighties in 20th century, the unify development of micro-fabrication technique of micro-electro-mechanical systems has promoted the development of micro-inertial technology and micro inertial instrument, result in accelerometer of new generation and gyrostatic generation.Micro inertial instrument is mostly made by semiconducter process, and volume is little, quality is light, low in energy consumption.Adopt silicon as rapidoprint, and use and the processing technology of microelectronic integrated circuit manufacturing process compatibility, by a single die integrated to the responsive gauge outfit of data processing and signal processing circuit, thus can realize producing in batches, reduce costs.Compared with conventional inertia instrument, Mierotubule-associated proteins also has reliability high, the feature that measurement range is large.These features of Mierotubule-associated proteins make it have broader range of application, not only can be used in the civil areas such as automobile engineering, mobile communication, geodetic surveying, geologic prospecting, micro-satellite, sports equipment, can also be applied in military field, comprise guided bomb, unmanned machine smart bombs etc.
Silicon micro-resonance type accelerometer is a kind of typical Micromachined Inertial Devices, and its principle of work is: beam resonance frequency when being subject to axial force effect of shaking changes, and is obtained the acceleration magnitude of input by the variable quantity detecting beam resonance frequency of shaking.Silicon micro-resonance type accelerometer output frequency signal, is a kind of accurate digital signal, is not vulnerable to the interference of neighbourhood noise, and have very high stability, and signal does not need, through A/D conversion, directly to enter digital display circuit, not easily occur distortion in transmitting procedure.Therefore, this sensor is easy to realize high-acruracy survey, belongs to high performance device, and it has again the various features of general data processing simultaneously, becomes one of developing direction of High Accuracy Microcomputer tool accelerometer of new generation.
At present, research both at home and abroad for single shaft silicon micro-resonance type accelerometer has achieved good achievement in research, and the research of two-axis resonant silicon micro-accelerometer is also rested on theoretic mostly, less unit has carried out actual processing and has obtained test result.But usually need again in actual applications to use twin shaft or three axis accelerometer to carry out acceleration measurement meter vector, and mostly there is the problems such as cross-couplings is serious of coupling between differential resonance device or X, Y-direction in more existing cross-compound arrangements.
Twin-axis accelerometer can be applied to the civilian projects such as military defense project and automobile shockproof protection, self-actuating brake, medical treatment such as satellite navigation, missile guidance, shell orientation.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the invention provides a kind of dual-axis silicon-micro resonance accelerometer that can realize measuring pairwise orthogonal directional acceleration.This dual-axis silicon-micro resonance accelerometer achieve detect same directional acceleration two differential resonance devices between decoupling zero and pairwise orthogonal direction between decoupling zero.
For achieving the above object, the technical solution used in the present invention is: the split type difference silicon micro-resonance type accelerometer of a kind of twin shaft, comprises upper layer of silicon micro mechanical structure and lower floor's glass pedestal, and upper layer of silicon micro mechanical structure is bonded in lower floor's glass pedestal; Wherein in lower floor's glass pedestal, sputtering has signal lead, and upper layer of silicon micro mechanical structure comprises four upper layer of silicon micromechanics minor structures, be respectively first, second, third, fourth upper layer of silicon micromechanics minor structure, first, second, third, fourth upper layer of silicon micromechanics minor structure by being counterclockwise arranged in order, and is bonded in lower floor's glass pedestal; Wherein, the first, the differential configuration that the 4th upper layer of silicon micromechanics minor structure is formed forms first group of acceleration analysis module, the differential configuration that second, third upper layer of silicon micromechanics minor structure is formed forms second group of acceleration analysis module, and the acceleration that described first group of acceleration analysis module is measured is mutually vertical with the acceleration that second group of acceleration analysis module is measured.
Preferred: the second upper layer of silicon micromechanics minor structure and the 3rd upper layer of silicon micromechanics minor structure are about upper layer of silicon micro mechanical structure central horizontal axis full symmetric; And after the first upper layer of silicon micromechanics minor structure dextrorotation turnback with the 4th upper layer of silicon micromechanics minor structure about upper layer of silicon micro mechanical structure central horizontal axis full symmetric.
Preferred: described upper layer of silicon micromechanics minor structure comprises mass, mass anchor district, mass brace summer and resonator minor structure; Described mass is connected with mass anchor district by mass brace summer, and described resonator minor structure is arranged in the middle part of mass.
Preferred: with regard to a upper layer of silicon micromechanics minor structure, described mass is the cruciform block structure of hollow, described mass anchor district, the number of mass brace summer is respectively 4, described mass anchor district is arranged at four corner positions of mass respectively, and by mass brace summer, mass anchor district and mass are interconnected, and described mass brace summer is divided into two groups, wherein one group of mass brace summer is arranged on the side of mass, and another group is arranged on the opposite side of mass, and these two groups of mass brace summers are about mass horizontal centre rotational symmetry.
Preferred: described resonator minor structure comprises two primary lever enlargers and a tuning fork resonator;
Described primary lever enlarger comprises input beam, lever arm, fulcrum beam, exports beam and lever anchor district, wherein, fulcrum beam and output beam are separately positioned on same one end of lever arm, and the other end of lever arm arranges input beam, and described input beam lays respectively at the both sides of lever arm with output beam, described fulcrum beam is in input beam and exports between beam simultaneously, and described fulcrum beam is connected with lever anchor district; Two primary lever enlargers are connected with mass respectively by input beam, and two primary lever enlargers are located on the same line and two primary lever enlargers are symmetrical arranged, and export beam with the first contiguous block of tuning fork resonator and be connected;
Described tuning fork resonator comprises resonator anchor district, resonator anchor district tie-beam, resonator end, resonator first contiguous block, resonator second contiguous block, drives fixed fingers, drive electrode, detection fixed fingers, detecting electrode, movable comb, comb frame and two resonance beam; Two resonance beam are arranged in parallel, and one end of two resonance beam is connected to one end of the first contiguous block, and the other end of the first contiguous block is connected on the output beam of two primary lever enlargers, the other end of two resonance beam is connected to one end of the second contiguous block simultaneously, and the other end of the second contiguous block connects with resonator end; The outside of described two resonance beam is provided with comb frame, and movable comb is attached on comb frame respectively, detect fixed fingers to be attached to respectively on detecting electrode, drive fixed fingers not to be attached on drive electrode, and movable comb respectively with driving fixed fingers, detect fixed fingers and form capacitor.
Preferred: described brace summer adopts folded beam form, and one end connects with mass, and the other end connects with mass anchor district; And the deformation direction of described brace summer and resonance beam direction of vibration perpendicular.
Principle of the present invention, silicon structural layer is made up of four part-structures be separated completely, form two groups of differential configurations, the wherein one group of structure measurement Y-direction acceleration in left side, i.e. the second upper layer of silicon micromechanics minor structure and the 3rd upper layer of silicon micromechanics minor structure, and the second upper layer of silicon micromechanics minor structure and the 3rd upper layer of silicon micromechanics minor structure are about upper layer of silicon micro mechanical structure central horizontal axis full symmetric; The one group of structure measurement X-direction acceleration in right side, i.e. the first upper layer of silicon micromechanics minor structure and the 4th upper layer of silicon micromechanics minor structure, and after the first upper layer of silicon micromechanics minor structure dextrorotation turnback with the 4th upper layer of silicon micromechanics minor structure about upper layer of silicon micro mechanical structure central horizontal axis full symmetric.Four part-structures are separated completely, and the measurement of pairwise orthogonal directional acceleration does not interfere with each other, and what achieve on pairwise orthogonal direction is full decoupled; Often the mass up and down organized in differential configuration is separated completely, thus cuts off upper and lower resonator, by mass, interactional passage occurs, and eliminates the coupling between upper and lower resonator; Every part-structure all comprises mass, brace summer, anchor district, primary lever enlarger, resonator; In every part-structure, mass is connected with anchor district by four brace summers; Resonator is positioned at the centre of mass, and one end is connected on the output beam of leverage, and the other end connects with anchor district; Two primary lever enlargers, wherein the output beam of leverage and fulcrum beam are positioned at the inner side of lever arm, and input beam is positioned at the outside of lever arm.
When there being acceleration to input, mass changes into inertial force acceleration, applied on the resonator by the inertial force that leverage amplifies, a resonator resonance frequency in differential resonance device is caused to increase, another resonator resonance frequency reduces, and just can obtain input acceleration size by the resonance frequency difference measuring two resonators.Two resonator dimensions are identical, and difference is arranged, effectively can suppress common-mode error.
The split type difference silicon micro-resonance type accelerometer of a kind of twin shaft provided by the invention, compared to existing technology, has following beneficial effect:
1. the two-part structure measuring X-direction acceleration is identical, after first upper layer of silicon micromechanics minor structure dextrorotation turnback with the 4th upper layer of silicon micromechanics minor structure about upper layer of silicon micro mechanical structure central horizontal axis full symmetric, form difference form, to the response that the factors such as temperature cause, there is consistance, be conducive to eliminating common-mode error.
2. the two-part structure measuring X-direction acceleration is completely isolated, has cut off the interactional passage of upper and lower resonator, thus eliminates the coupling between differential resonance device.
3. the two-part structure measuring Y-direction acceleration is identical, about silicon structural layer central horizontal axis full symmetric, forms difference form, has consistance to the response that the factors such as temperature cause, and is conducive to eliminating common-mode error.
4. the two-part structure measuring Y-direction acceleration is completely isolated, has cut off the interactional passage of upper and lower resonator, thus eliminates the coupling between differential resonance device.
5. four part-structures all have independently mass, can eliminate the coupling between X, Y pairwise orthogonal direction completely.
6. under acceleration effect, differential resonance device frequency increases respectively and reduces, and by measuring the difference of the frequency change of two resonators, can obtain this direction acceleration magnitude.Difference form can increase resonator output signal, improves sensitivity, more easily detects.
7. static excitation adopts comb capacitance structure, compared with traditional parallel plate capacitor structure, can obtain larger amplitude on the one hand; The damping be subject on the other hand is slide-film damping, can improve quality factor.
8. resonance beam is not directly connected with resonator anchor district, is conducive to discharging processing and the thermal stress caused by environment temperature.
In sum, the split type difference silicon micro-resonance type accelerometer of twin shaft that the present invention proposes, not only effectively can suppress two groups of common-mode errors formed between two resonators of differential configuration, eliminate the coupling influence between two resonators, and the decoupling zero between X-direction and Y-direction can be realized.
Accompanying drawing explanation
Fig. 1 is the planar structure schematic diagram of a kind of split type difference silicon micro-resonance type accelerometer of the present invention;
Fig. 2 is subresonator structural representation of the present invention;
Wherein, 1a, 1b, 1c, 1d are mass, and 2a, 2b, 2c, 2d are resonator minor structure, 3a1,3a2,3a3,3a4; 3b1,3b2,3b3,3b4; 3c1,3c2,3c3,3c4; 3d1,3d2,3d3,3d4 are mass brace summer, 4a1,4a2,4a3,4a4; 4b1,4b2,4b3,4b4; 4c1,4c2,4c3,4c4; 4d1,4d2,4d3,4d4 are mass anchor district, and 5a, 5b are primary lever enlarger, and 6a, 6b are input beam, and 7a, 7b are lever arm, and 8a, 8b are fulcrum beam, and 9a, 9b are output beam, and 10a, 10b are lever anchor district; 12a, 12b are resonance beam, 11 is resonance beam first contiguous block, and 19 is resonance beam second contiguous block, and 14a1,14a2,14b1,14b2 are driving fixed fingers, 13a1,13a2,13b1,13b2 are drive electrode, 15a, 15b are detection fixed fingers, and 16a, 16b are detecting electrode, and 17a, 17b are movable comb, 18a, 18b are comb frame, 20a, 20b are resonator anchor district, and 21a, 21b are resonator anchor district tie-beam, and 22 is resonator end.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
The split type difference silicon micro-resonance type accelerometer of a kind of twin shaft, as shown in Figure 1, comprise upper layer of silicon micro mechanical structure and lower floor's glass pedestal, upper layer of silicon micro mechanical structure is bonded in lower floor's glass pedestal; Wherein in lower floor's glass pedestal, sputtering has signal lead, and upper layer of silicon micro mechanical structure comprises four upper layer of silicon micromechanics minor structures, be respectively first, second, third, fourth upper layer of silicon micromechanics minor structure, first, second, third, fourth upper layer of silicon micromechanics minor structure is by being counterclockwise sequentially arranged in lower floor's glass pedestal; Wherein, the first, the differential configuration that the 4th upper layer of silicon micromechanics minor structure is formed forms first group of acceleration analysis module, the differential configuration that second, third upper layer of silicon micromechanics minor structure is formed forms second group of acceleration analysis module, and the acceleration that described first group of acceleration analysis module is measured is mutually vertical with the acceleration that second group of acceleration analysis module is measured.
Second upper layer of silicon micromechanics minor structure and the 3rd upper layer of silicon micromechanics minor structure are about upper layer of silicon micro mechanical structure central horizontal axis full symmetric; And after the first upper layer of silicon micromechanics minor structure dextrorotation turnback with the 4th upper layer of silicon micromechanics minor structure about upper layer of silicon micro mechanical structure central horizontal axis full symmetric
Described upper layer of silicon micromechanics minor structure comprises mass (1a, 1b, 1c, 1d), mass anchor district (4a1,4a2,4a3,4a4; 4b1,4b2,4b3,4b4; 4c1,4c2,4c3,4c4; 4d1,4d2,4d3,4d4), mass brace summer (3a1,3a2,3a3,3a4; 3b1,3b2,3b3,3b4; 3c1,3c2,3c3,3c4; 3d1,3d2,3d3,3d4) and resonator minor structure (2a, 2b, 2c, 2d); Described mass (1a, 1b, 1c, 1d) is by mass brace summer (3a1,3a2,3a3,3a4; 3b1,3b2,3b3,3b4; 3c1,3c2,3c3,3c4; 3d1,3d2,3d3,3d4) and mass anchor district (4a1,4a2,4a3,4a4; 4b1,4b2,4b3,4b4; 4c1,4c2,4c3,4c4; 4d1,4d2,4d3,4d4) be connected, described resonator minor structure (2a, 2b, 2c, 2d) is arranged at mass (1a, 1b, 1c, 1d) middle part.
As shown in Figure 1, the first upper layer of silicon micromechanics minor structure comprises mass 1a, mass anchor district (4a1,4a2,4a3,4a4), mass brace summer (3a1,3a2,3a3,3a4) and resonator minor structure 2a; Described mass 1a is connected with mass anchor district (4a1,4a2,4a3,4a4) by mass brace summer (3a1,3a2,3a3,3a4), and described resonator minor structure 2a is arranged in the middle part of mass 1a;
As shown in Figure 1, the second upper layer of silicon micromechanics minor structure comprises mass 1b, mass anchor district (4b1,4b2,4b3,4b4), mass brace summer (3b1,3b2,3b3,3b4) and resonator minor structure 2b; Described mass 1b is connected with mass anchor district (4b1,4b2,4b3,4b4) by mass brace summer (3b1,3b2,3b3,3b4), and described resonator minor structure 2b is arranged at mass 1b) middle part;
As shown in Figure 1, the 3rd upper layer of silicon micromechanics minor structure comprises mass 1c, mass anchor district (4c1,4c2,4c3,4c4), mass brace summer (3c1,3c2,3c3,3c4) and resonator minor structure 2c; Described mass 1c is connected with mass anchor district (4c1,4c2,4c3,4c4) by mass brace summer (3c1,3c2,3c3,3c4), and described resonator minor structure 2c is arranged in the middle part of mass 1c.
As shown in Figure 1, the 4th upper layer of silicon micromechanics minor structure comprises mass 1d, mass anchor district (4d1,4d2,4d3,4d4), mass brace summer (3d1,3d2,3d3,3d4) and resonator minor structure 2d; Described mass 1d is connected with mass anchor district (4d1,4d2,4d3,4d4) by mass brace summer (3d1,3d2,3d3,3d4), and described resonator minor structure 2d is arranged in the middle part of mass 1d.
From the above, the structure of first, second, third, fourth upper layer of silicon micromechanics minor structure of the present invention is all identical, and just its arranged direction is different.As shown in Figure 1, set up coordinate plane so that silicon microstructure layer place, upper strata plane is parallel, the central horizontal axis of upper layer of silicon microstructured layers is X-axis, and vertical axes is Y-axis,
Due to first, second, 3rd, the structure of the 4th upper layer of silicon micromechanics minor structure is all identical, therefore, only need to be described one of them structure, the second upper layer of silicon micromechanics minor structure is selected to be described, described mass 1b is the cruciform block structure of hollow, four unfilled corners of the cruciform block structure of this hollow are corner position, upper layer of silicon micromechanics minor structure comprise 4 mass anchor district (4b1, 4b2, 4b3, 4b4), 4 mass brace summer (3b1, 3b2, 3b3, 3b4), 4 mass anchor district (4b1, 4b2, 4b3, 4b4) be arranged at four corner positions of mass 1b respectively, and by mass brace summer (3b1, 3b2, 3b3, 3b4) by mass anchor district (4b1, 4b2, 4b3, 4b4) be interconnected with mass 1b, and the described mass brace summer (3b1 of each upper layer of silicon micromechanics minor structure, 3b2, 3b3, 3b4) be divided into two groups, wherein one group of mass brace summer (3b1, 3b4) be arranged on the side of mass 1a, and another group mass brace summer (3b2, 3b3) be arranged on the opposite side of mass 1b, and these two groups of mass brace summers are about mass horizontal centre rotational symmetry.
As shown in Figure 1, described resonator minor structure (2a, 2b, 2c, 2d) includes two primary lever enlargers and a tuning fork resonator;
As shown in Figure 2, be the schematic diagram of resonator minor structure, due to first, second, 3rd, the structure of the 4th upper layer of silicon micromechanics minor structure is all identical, therefore only need illustrate any one first, second, 3rd, the resonator minor structure of the 4th upper layer of silicon micromechanics minor structure, for ease of explanation, be described the resonator minor structure 2b of the second upper layer of silicon micromechanics minor structure, as shown in Figure 2, described resonator minor structure 2b comprises two primary lever enlarger (5a, 5b) and tuning fork resonator, described primary lever enlarger (5a, 5b) comprise input beam (6a, 6b), lever arm (7a, 7b), fulcrum beam (8a, 8b), export beam (9a, 9b) with lever anchor district (10a, 10b), wherein, fulcrum beam (8a, 8b) with output beam (9a, 9b) be separately positioned on lever arm (7a, same one end 7b), and lever arm (7a, other end 7b) arranges input beam (6a, 6b), and described input beam (6a, 6b) with output beam (9a, 9b) lay respectively at lever arm (7a, both sides 7b), simultaneously described fulcrum beam (8a, 8b) be in input beam (6a, 6b) with output beam (9a, 9b), described fulcrum beam (8a, 8b) with lever anchor district (10a, 10b) be connected, two primary lever enlargers (5a, 5b) are connected with mass 1a respectively by input beam (6a, 6b), two primary lever enlargers (5a, 5b) are located on the same line and two primary lever enlargers (5a, 5b) are symmetrical arranged, and export beam (9a, 9b) with the first contiguous block 11 of tuning fork resonator and be connected,
Described tuning fork resonator comprises resonator anchor district (20a, 20b), resonator anchor district tie-beam (21a, 21b), resonator end 22, resonator first contiguous block 11, resonator second contiguous block 19, drive fixed fingers (14a1, 14a2, 14b1, 14b2), drive electrode (13a1, 13a2, 13b1, 13b2), detect fixed fingers (15a, 15b), detecting electrode (16a, 16b), movable comb (17a, 17b), comb frame (18a, 18b) and two resonance beam (12a, 12b), two resonance beam (12a, 12b) are arranged in parallel, and one end of two resonance beam (12a, 12b) is linked together by one end of the first contiguous block 11, and the other end of the first contiguous block 11 is connected on the output beam (9a, 9b) of two primary lever enlargers (5a, 5b), the other end of two resonance beam (12a, 12b) is linked together by one end of the second contiguous block 19 simultaneously, and the other end of the second contiguous block 19 connects with resonator end 22, described two resonance beam (12a, 12b) relative outside is provided with comb frame (18a, 18b), and movable comb (17a, 17b) be attached to comb frame (18a respectively, 18b), detect fixed fingers (15a, 15b) be attached to detecting electrode (16a respectively, 16b), drive fixed fingers (14a1, 14a2, 14b1, 14b2) be not attached to drive electrode (13a1, 13a2, 13b1, 13b2), and movable comb (17a, 17b) respectively with driving fixed fingers (14a1, 14a2, 14b1, 14b2), detect fixed fingers (15a, 15b) form capacitor.
Described mass brace summer (3b1,3b2,3b3,3b4) adopts folded beam form, and one end connects with mass 1b, and the other end connects with mass anchor district (4b1,4b2,4b3,4b4); And the deformation direction of described mass brace summer (3b1,3b2,3b3,3b4) and resonance beam (12a, 12b) direction of vibration perpendicular.
In order to better the present invention is described, now provide example of the present invention.
Composition graphs 1, the present invention is based on split type difference silicon micro-resonance type accelerometer, and comprise upper layer of silicon micro mechanical structure and lower floor's glass pedestal, upper layer of silicon micro mechanical structure is bonded in lower floor's glass pedestal.Wherein upper layer of silicon micro mechanical structure is made up of the identical structure of four parts, and four part-structures are separated completely, form differential configuration between two.Left side up and down two parts, about silicon structural layer central horizontal axis full symmetric, forms differential configuration, measures Y-direction input acceleration; Right side up and down two parts about after the first upper layer of silicon micromechanics minor structure dextrorotation turnback of silicon structural layer with the 4th upper layer of silicon micromechanics minor structure about upper layer of silicon micro mechanical structure central horizontal axis full symmetric, form differential configuration, measure X-direction input acceleration.Every part-structure is made up of mass, primary lever enlarger, tuning fork resonator, static broach driver and comb capacitance detector, brace summer, anchor district, and in lower floor's glass pedestal, sputtering has signal lead.Silicon structure comprises four masses (1a, 1b, 1c, 1d), four resonator minor structures (2a, 2b, 2c, 2d), mass brace summer (3a1,3a2,3a3,3a4; 3b1,3b2,3b3,3b4; 3c1,3c2,3c3,3c4; 3d1,3d2,3d3,3d4), mass anchor district (4a1,4a2,4a3,4a4; 4b1,4b2,4b3,4b4; 4c1,4c2,4c3,4c4; 4d1,4d2,4d3,4d4); Four masses (1a, 1b, 1c, 1d) are identical, and wherein mass 1b, 1c is by brace summer (3b1,3b2,3b3,3b4; 3c1,3c2,3c3,3c4) respectively with mass anchor district (4b1,4b2,4b3,4b4; 4c1,4c2,4c3,4c4) be connected, mass 1a, 1d are by brace summer (3a1,3a2,3a3,3a4; 3d1,3d2,3d3,3d4) respectively with mass anchor district (4a1,4a2,4a3,4a4; 4d1,4d2,4d3,4d4) be connected.Brace summer adopts folded beam form, and one end connects with mass, and the other end connects with anchor district.The brace summer of the folded beam form of laterally placing can limit mass and move in X-direction, but does not affect its motion in acceleration sensitive direction Y-direction, reduces the cross-couplings of X, Y-direction.The brace summer of the folded beam form of vertical placement can limit mass and move in the Y direction, but does not affect its motion in acceleration sensitive direction X-direction, also can reduce the cross-couplings of X, Y-direction.In four identical parts, four masses (1a, 1b, 1c, 1d) are separated completely, cut off the passage of energy transferring between resonator, the coupling between two differential configurations eliminating the coupling on pairwise orthogonal direction and measure same directional acceleration.
Composition graphs 1, silicon structural layer is made up of four part-structures, and with regard to 1/4th structures, mass 1a is connected with mass anchor district (4a1,4a2,4a3,4a4) respectively by brace summer (3a1,3a2,3a3,3a4); Resonator 2a connects with resonator anchor district (20a, 20b) respectively; Primary lever enlarger (5a, 5b) connects with lever anchor district (10a, 10b) respectively by fulcrum beam (8a, 8b); Thus make physical construction layer be suspended in the top of substrate of glass.
Composition graphs 1, four resonator minor structures (2a, 2b, 2c, 2d) lay respectively in mass (1a, 1b, 1c, 1d).Four resonator minor structure (2a, 2b, 2c, 2d) versions are identical, and only press different directions and place, wherein 2b, 2c vertically place, 2a, 2d horizontal positioned, all comprise two primary lever enlargers and a tuning fork resonator.
Four resonator structure minor structures are identical.Composition graphs 2, resonator minor structure 2b includes primary lever enlarger (5a, 5b); Primary lever enlarger 5a and primary lever enlarger 5b places about silicon structural layer vertical axis, and the input beam of primary lever enlarger (5a, 5b) is connected with the block 1a that improves quality, and exports beam and is connected with tuning fork resonator contiguous block 11.Primary lever enlarger (5a, 5b) comprise input beam (6a, 6b), lever arm (7a, 7b), fulcrum beam (8a, 8b), export beam (9a, 9b), with lever anchor district (10a, 10b), wherein, input beam (6a, 6b) be positioned at lever arm (7a, outside 7b), fulcrum beam (8a, 8b), export beam (9a, 9b) be positioned at lever arm (7a, inner side 7b), fulcrum beam (8a, 8b) be in input beam (6a in the horizontal direction, 6b), export beam (9a, 9b), fulcrum beam (8a, 8b) with lever anchor district (10a, 10b) be connected, such version meets the requirement of processing conditions more, input beam (6a, 6b) upper end is connected with mass 1a, and lower end connects lever arm (7a, 7b), and fulcrum beam (8a, 8b) connects with lever anchor district (10a, 10b), plays a supportive role.Export beam (9a, 9b) upper end to be connected with lever arm 7a, 7b, lower end is connected with tuning fork resonator contiguous block 11.
Composition graphs 2, tuning fork resonator structure comprises resonator anchor district (20a, 20b), resonator anchor district tie-beam (21a, 21b), resonator end 22, first contiguous block 11, second contiguous block 19, drive fixed fingers (14a1,14a2,14b1,14b2), drive electrode (13a1,13a2,13b1,13b2), detect fixed fingers (15a, 15b), detecting electrode (16a, 16b), movable comb (17a, 17b), comb frame (18a, 18b), resonance beam (12a, 12b).
Resonance beam (12a, 12b) is arranged in parallel, and two ends are connected by the first contiguous block 11, second contiguous block 19, and first contiguous block 11 other end is connected to corresponding primary lever enlarger, and second contiguous block 19 other end connects with resonator end 13; Resonance beam (12a, 12b) is connected with respectively comb frame (18a, 18b); Movable comb (17a, 17b) is attached on comb frame (18a, 18b) respectively, detecting fixed fingers (15a, 15b) is attached on detecting electrode (16a, 16b) respectively, drives fixed fingers (14a1,14a2,14b1,14b2) not to be attached on drive electrode (13a1,13a2,13b1,13b2).Comb frame is connected with resonance beam, and movable comb additional on it and fixed fingers form multiple unit capacitor.When applying the signal of alternating current-direct current superposition on drive electrode, movable comb is subject to electrostatic forcing, and resonance beam can be driven with natural frequency vibration.When there being outer acceleration, inertial force is produced by mass sensitive acceleration, and amplify through leverage, act on the axis of resonance beam, resonance beam vibration frequency changes, there is corresponding change in the condenser capacitance change frequency that movable comb and detection fixed fingers are formed, this signal is converted into the change of voltage, can be obtained the change of acceleration by the change of detection voltage.
Principle of work of the present invention: X-direction acceleration load transfer is become inertial force by the upper and lower mass in right side (1a, 1d), inertial force is applied on the input beam of primary lever enlarger, be applied on tuning fork resonator after amplifying, two resonators under tension, another is under pressure, resonance frequency increases respectively and reduces, and obtains the size of X-direction acceleration load according to frequency difference; By the upper and lower mass in left side (1b, 1c), Y-direction acceleration load transfer is become inertial force, inertial force is applied on the input beam of primary lever enlarger, be applied on tuning fork resonator after amplifying, two resonators under tension, another is under pressure, resonance frequency increases respectively and reduces, and obtains the size of Y-direction acceleration load according to frequency difference.
From the above, the minor structure that this accelerometer is separated completely by four parts forms, and is independent of each other, and forms differential configuration between two, and can realize full decoupled.Left side up and down two parts forms differential configuration, measures Y-direction input acceleration; Right side up and down two parts forms differential configuration, measures X-direction input acceleration.One-piece construction is suspended in the top of substrate of glass by mass anchor district, resonator anchor district of lever anchor district.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. the split type difference silicon micro-resonance type accelerometer of twin shaft, it is characterized in that: comprise upper layer of silicon micro mechanical structure and lower floor's glass pedestal, upper layer of silicon micro mechanical structure is bonded in lower floor's glass pedestal; Wherein in lower floor's glass pedestal, sputtering has signal lead, and upper layer of silicon micro mechanical structure comprises four upper layer of silicon micromechanics minor structures, be respectively first, second, third, fourth upper layer of silicon micromechanics minor structure, first, second, third, fourth upper layer of silicon micromechanics minor structure by being counterclockwise arranged in order, and is bonded in lower floor's glass pedestal; Wherein, the first, the differential configuration that the 4th upper layer of silicon micromechanics minor structure is formed forms first group of acceleration analysis module, the differential configuration that second, third upper layer of silicon micromechanics minor structure is formed forms second group of acceleration analysis module, and the acceleration that described first group of acceleration analysis module is measured is mutually vertical with the acceleration that second group of acceleration analysis module is measured.
2. the split type difference silicon micro-resonance type accelerometer of twin shaft according to claim 1, is characterized in that: the second upper layer of silicon micromechanics minor structure and the 3rd upper layer of silicon micromechanics minor structure are about upper layer of silicon micro mechanical structure central horizontal axis full symmetric; And after the first upper layer of silicon micromechanics minor structure dextrorotation turnback with the 4th upper layer of silicon micromechanics minor structure about upper layer of silicon micro mechanical structure central horizontal axis full symmetric.
3. the split type difference silicon micro-resonance type accelerometer of twin shaft according to claim 2, is characterized in that: described upper layer of silicon micromechanics minor structure comprises mass, mass anchor district, mass brace summer and resonator minor structure; Described mass is connected with mass anchor district by mass brace summer, and described resonator minor structure is arranged in the middle part of mass.
4. twin shaft according to claim 3 split type difference silicon micro-resonance type accelerometer upper layer of silicon micromechanics minor structure, it is characterized in that: described mass is the cruciform block structure of hollow, described mass anchor district, the number of mass brace summer is respectively 4, described mass anchor district is arranged at four corner positions of mass respectively, and by mass brace summer, mass anchor district and mass are interconnected, and described mass brace summer is divided into two groups, wherein one group of mass brace summer is arranged on the side of mass, and another group is arranged on the opposite side of mass, and these two groups of mass brace summers are about mass horizontal centre rotational symmetry.
5. the split type difference silicon micro-resonance type accelerometer of twin shaft according to claim 4, is characterized in that: described resonator minor structure comprises two primary lever enlargers and a tuning fork resonator;
Described primary lever enlarger comprises input beam, lever arm, fulcrum beam, exports beam and lever anchor district, wherein, fulcrum beam and output beam are separately positioned on same one end of lever arm, and the other end of lever arm arranges input beam, and described input beam lays respectively at the both sides of lever arm with output beam, described fulcrum beam is in input beam and exports between beam simultaneously, and described fulcrum beam is connected with lever anchor district; Two primary lever enlargers are connected with mass respectively by input beam, and two primary lever enlargers are located on the same line and two primary lever enlargers are symmetrical arranged, and export beam with the first contiguous block of tuning fork resonator and be connected;
Described tuning fork resonator comprises resonator anchor district, resonator anchor district tie-beam, resonator end, resonator first contiguous block, resonator second contiguous block, drives fixed fingers, drive electrode, detection fixed fingers, detecting electrode, movable comb, comb frame and two resonance beam; Two resonance beam are arranged in parallel, and one end of two resonance beam is connected to one end of the first contiguous block, and the other end of the first contiguous block is connected on the output beam of two primary lever enlargers, the other end of two resonance beam is connected to one end of the second contiguous block simultaneously, and the other end of the second contiguous block connects with resonator end; The outside of described two resonance beam is provided with comb frame, and movable comb is attached on comb frame respectively, detect fixed fingers to be attached to respectively on detecting electrode, drive fixed fingers not to be attached on drive electrode, and movable comb respectively with driving fixed fingers, detect fixed fingers and form capacitor.
6. the split type difference silicon micro-resonance type accelerometer of twin shaft according to claim 5, is characterized in that: described brace summer adopts folded beam form, and one end connects with mass, and the other end connects with mass anchor district; And the deformation direction of described brace summer and resonance beam direction of vibration perpendicular.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410789858.0A CN104501792B (en) | 2014-12-18 | 2014-12-18 | A kind of split type difference silicon micro-resonance type accelerometer of twin shaft |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410789858.0A CN104501792B (en) | 2014-12-18 | 2014-12-18 | A kind of split type difference silicon micro-resonance type accelerometer of twin shaft |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104501792A true CN104501792A (en) | 2015-04-08 |
| CN104501792B CN104501792B (en) | 2016-06-22 |
Family
ID=52943218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410789858.0A Active CN104501792B (en) | 2014-12-18 | 2014-12-18 | A kind of split type difference silicon micro-resonance type accelerometer of twin shaft |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104501792B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105258688A (en) * | 2015-10-30 | 2016-01-20 | 北京航天控制仪器研究所 | Micro-silicon resonance accelerometer with temperature stress compensation and vibration decoupling capabilities |
| WO2017135891A1 (en) * | 2016-02-01 | 2017-08-10 | Agency For Science, Technology And Research | Gyroscope devices and methods for fabricating gyroscope devices |
| CN107289920A (en) * | 2017-05-10 | 2017-10-24 | 中国航空工业集团公司西安飞行自动控制研究所 | A kind of direct-coupled four masses micromechanical gyro of angular speed sensitive direction |
| CN108204806A (en) * | 2016-12-19 | 2018-06-26 | 美国亚德诺半导体公司 | Synchronizing quality block gyroscope |
| CN109406826A (en) * | 2018-08-30 | 2019-03-01 | 南京理工大学 | Accelerometer installation method based on rotary motion body |
| CN110531101A (en) * | 2019-09-02 | 2019-12-03 | 东南大学 | A kind of ceramic pinboard improving difference silicon vibrating beam accelerometer temperature characterisitic |
| CN113985068A (en) * | 2015-10-20 | 2022-01-28 | 美国亚德诺半导体公司 | Multi-axis resonance accelerometer |
| CN115575668A (en) * | 2022-10-09 | 2023-01-06 | 东南大学 | Silicon micro-resonance type accelerometer temperature error suppression electrode and suppression method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05256870A (en) * | 1991-01-11 | 1993-10-08 | Northrop Corp | Small-sized silicon accelerometer and its method |
| CN101303234A (en) * | 2008-05-22 | 2008-11-12 | 北京航空航天大学 | Self-decoupling high-sensitivity resonance silicon micro mechanical gyroscope |
| US20110185813A1 (en) * | 2010-01-12 | 2011-08-04 | Johannes Classen | Micromechanical yaw rate sensor having two sensitive axes and coupled detection modes |
| CN203216497U (en) * | 2013-03-28 | 2013-09-25 | 南京信息工程大学 | Torsional resonant type micro-accelerometer |
| CN204255365U (en) * | 2014-12-18 | 2015-04-08 | 东南大学 | The split type difference silicon micro-resonance type accelerometer of a kind of twin shaft |
-
2014
- 2014-12-18 CN CN201410789858.0A patent/CN104501792B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05256870A (en) * | 1991-01-11 | 1993-10-08 | Northrop Corp | Small-sized silicon accelerometer and its method |
| CN101303234A (en) * | 2008-05-22 | 2008-11-12 | 北京航空航天大学 | Self-decoupling high-sensitivity resonance silicon micro mechanical gyroscope |
| US20110185813A1 (en) * | 2010-01-12 | 2011-08-04 | Johannes Classen | Micromechanical yaw rate sensor having two sensitive axes and coupled detection modes |
| CN203216497U (en) * | 2013-03-28 | 2013-09-25 | 南京信息工程大学 | Torsional resonant type micro-accelerometer |
| CN204255365U (en) * | 2014-12-18 | 2015-04-08 | 东南大学 | The split type difference silicon micro-resonance type accelerometer of a kind of twin shaft |
Non-Patent Citations (2)
| Title |
|---|
| 裘安萍 等: "硅微振梁式加速度传感器中微杠杆结构的设计", 《传感技术学报》 * |
| 陈卫卫 等: "不等基频硅微谐振式加速度计", 《传感技术学报》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113985068A (en) * | 2015-10-20 | 2022-01-28 | 美国亚德诺半导体公司 | Multi-axis resonance accelerometer |
| CN105258688A (en) * | 2015-10-30 | 2016-01-20 | 北京航天控制仪器研究所 | Micro-silicon resonance accelerometer with temperature stress compensation and vibration decoupling capabilities |
| WO2017135891A1 (en) * | 2016-02-01 | 2017-08-10 | Agency For Science, Technology And Research | Gyroscope devices and methods for fabricating gyroscope devices |
| CN108204806A (en) * | 2016-12-19 | 2018-06-26 | 美国亚德诺半导体公司 | Synchronizing quality block gyroscope |
| CN108204806B (en) * | 2016-12-19 | 2021-10-08 | 美国亚德诺半导体公司 | Synchronous mass block gyroscope |
| CN107289920A (en) * | 2017-05-10 | 2017-10-24 | 中国航空工业集团公司西安飞行自动控制研究所 | A kind of direct-coupled four masses micromechanical gyro of angular speed sensitive direction |
| CN107289920B (en) * | 2017-05-10 | 2021-02-09 | 中国航空工业集团公司西安飞行自动控制研究所 | Four-mass-block micromechanical gyroscope with angular rate sensitive direction direct coupling |
| CN109406826A (en) * | 2018-08-30 | 2019-03-01 | 南京理工大学 | Accelerometer installation method based on rotary motion body |
| CN110531101A (en) * | 2019-09-02 | 2019-12-03 | 东南大学 | A kind of ceramic pinboard improving difference silicon vibrating beam accelerometer temperature characterisitic |
| CN115575668A (en) * | 2022-10-09 | 2023-01-06 | 东南大学 | Silicon micro-resonance type accelerometer temperature error suppression electrode and suppression method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104501792B (en) | 2016-06-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104501792B (en) | A kind of split type difference silicon micro-resonance type accelerometer of twin shaft | |
| CN103026172B (en) | For detecting the gyroscope of motion | |
| CN107063222B (en) | The double quality silicon micromechanical gyroscopes of three frame-types of direct rate-adaptive pacemaker | |
| CN103900545B (en) | Monolithic integration holohedral symmetry three-axis silicon micro-tuning fork gyroscope | |
| CN105911309B (en) | Single anchor points support formula dual-axis silicon-micro resonance accelerometer | |
| CN101368826B (en) | Vibration isolation frame work decoupled silicon micro-gyroscope | |
| CN101666646B (en) | Inclined double-end tuning-fork type silica micromechanical gyroscope and making method thereof | |
| CN104613952B (en) | Three axle single-chip integration full decoupling angular oscillation ring type silicon gyros and its processing method | |
| EP3561451B1 (en) | Triaxial micro-electromechanical gyroscope | |
| CN103438878A (en) | Triaxial micromechanical gyroscope | |
| CN113203404A (en) | Three-axis gyroscope | |
| CN104296746A (en) | Novel minitype inertial measurement unit assembly | |
| CN104406579A (en) | Micro-electromechanical deformable structure and triaxial multi-degree of freedom micro-electromechanical gyroscope | |
| CN113203403A (en) | Three-axis gyroscope | |
| CN204255365U (en) | The split type difference silicon micro-resonance type accelerometer of a kind of twin shaft | |
| CN113203405A (en) | Three-axis gyroscope | |
| CN113310479A (en) | Three-axis gyroscope | |
| CN101476887B (en) | Inverse magnetic suspension vibrating micro-gyroscope | |
| CN101476888B (en) | Inverse magnetic suspension vibrating micro-gyroscope | |
| CN204188169U (en) | Micro electronmechanical deformable structure and three axle multiple degrees of freedom micro-electro-mechanical gyroscopes | |
| CN105953781A (en) | Tuning-fork micromechanical gyroscope sensor applied to wireless sensor network | |
| CN107782294B (en) | Double-mass-block tuning fork gyroscope with stress isolation capability | |
| CN113218381A (en) | Three-axis gyroscope | |
| CN106153026B (en) | A kind of tuning-fork-type microelectromechanicgyroscope gyroscope | |
| CN113295155A (en) | Three-axis gyroscope |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: No. 78 Jiangning Avenue street Affirmative moling District of Nanjing City, Jiangsu province 211111 Applicant after: Southeast University Address before: Four pailou Nanjing Xuanwu District of Jiangsu Province, No. 2 210018 Applicant before: Southeast University |
|
| COR | Change of bibliographic data | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |