CN104483764B - A kind of defect magnetic photonic crystal and purposes with nonreciprocity characteristic - Google Patents
A kind of defect magnetic photonic crystal and purposes with nonreciprocity characteristic Download PDFInfo
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- CN104483764B CN104483764B CN201410633382.1A CN201410633382A CN104483764B CN 104483764 B CN104483764 B CN 104483764B CN 201410633382 A CN201410633382 A CN 201410633382A CN 104483764 B CN104483764 B CN 104483764B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/09—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect
- G02F1/095—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure
- G02F1/0955—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on magneto-optical elements, e.g. exhibiting Faraday effect in an optical waveguide structure used as non-reciprocal devices, e.g. optical isolators, circulators
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/0009—Materials therefor
- G02F1/0036—Magneto-optical materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/32—Photonic crystals
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- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention discloses a kind of defect magnetic photonic crystal with nonreciprocity characteristic and purposes, including one-dimensional magnetic photonic crystal and magneto-optic memory technique defect layer, 1-D photon crystal is alternately made up of magneto-optic memory technique A and isotropic medium material B, and the magneto-optic memory technique C positioned at structure centre position is magneto-optic memory technique defect layer.Its structure is [A/B]m[C][A/B]mA, wherein magnet-optical medium A dielectric tensors are εA, xx=εA, yy=εA, zz=1.96, εA, xz=εA, zx=i0.4, εA, xy=εA, yx=εA, yz=εA, zy=0, thickness da=69.3nm, dielectric layer B dielectric constant are εb=4, db=152.8nm, lattice period is d=da+db=222.1nm, defect layer C dielectric tensors are εC, xx=εC, yy=εA, zz=1.96, εC, xz=εC, zx=i0.4, εC, xy=εC, yx=εC, yz=εC, zy=0, dc=150nm, m are the periodicity of photonic crystal, take 13.The present invention has structure popular, and technique is simple, and the features such as feature is strong, flexible design has wide practical use in terms of optoisolator, optical circulator.
Description
Technical field
It is more particularly to a kind of nonreciprocal based on magnetic photonic crystal the present invention relates to photon crystal device and magneto-optic technical field
The defect magnetic photonic crystal and purposes of characteristic structure.
Background technology
Nonreciprocity refer to electromagnetic wave in object along opposite both direction transmission can present different electromagnetic consumables,
The characteristics such as phase shift.It has a wide range of applications in isolator and circulator.The conventional method for realizing these devices be by means of
The nonreciprocal effect of magneto-optic memory technique, allows the pattern of light wave to produce a phase deviation between fl transmission and reverse transfers, returns
The invertibity of light path is kept away.Traditional nonreciprocity is based primarily upon the block structure of magneto-optic memory technique, and device volume and weight are big, steady
It is qualitative difference and be difficult with other devices it is integrated the shortcomings of, the need for not adapting to present information optronics technique development.In recent years
Come, numerous studies show that magnetic photonic crystal has broad application prospects, it is brilliant using magneto-optic particularly in optical communication field
Body can develop a variety of optic communication devices.Magnetic photonic crystal provides one for the nonreciprocal device realized miniaturization, be easily integrated
The brand-new idea and method of bar.
Non-reciprocal device is one of primary element of photon technology, there is wide in terms of optic communication and optical Information Processing
General application, the nonreciprocal device (CN101067673A) based on magneto-optic resonance chamber proposes that a kind of optics containing magneto-optic memory technique is micro-
The isolator of resonance structure.But need the optical coupling structure by side, with the input port at optical coupling structure two ends and
Output port carries out power coupling and constituted, optical coupled to have energy loss, it is impossible to realize total transmissivity.Due to 1-D photon crystal
Simple in construction, good reliability, the advantages of easily prepare, be easy to integrated, therefore realized using 1-D photon crystal to optical signal
Processing increasingly cause the concern of people.It can be seen from the characteristic of photonic crystal, electromagnetic wave has periodic structure this
Material in propagate when can be modulated by cycle potential field is constituted by dielectric, so as to be formed similar to semiconductor energy band structure
It is possible that band gap, i.e. photon band gap (abbreviation PBG), frequency fall between photonic band gap (photonic band), photonic band gap
Light in band gap can not pass through.Introduced in complete photonic crystal and Defect Modes, Ke Yishi occur in defect, forbidden photon band
Existing narrow-band filtering.Reach that time to rupture inverting is symmetrical and space using the one-dimensional magnetic photonic crystal of the defect sturcture containing magneto-optic memory technique
It can symmetrically realize that nonreciprocity of the ultra-narrow with electromagnetic wave is propagated.
The content of the invention
The present invention solves the technical problem of the nonreciprocity of the setting of model parameter and Electromagnetic Wave Propagation there is provided
A kind of defect magnetic photonic crystal and purposes with nonreciprocity characteristic.
The technical scheme is that：A kind of defect magnetic photonic crystal with nonreciprocity characteristic, including one-dimensional magneto-optic
Sub- crystal and magneto-optic memory technique defect layer, its structure is [A/B]m C[A/B]mA, 1-D photon crystal is from magneto-optic memory technique A and each to same
Property dielectric material B alternately constitute, the magneto-optic memory technique C positioned at structure centre position is magneto-optic memory technique defect layer.Pass through defect sturcture
Design so that the electromagnetic wave of input specific frequency realizes one-way transmission, i.e., positive transmission reversely ends, and can effectively realize
The function of optoisolator.
Further, membrane system the periodicity m=13, magneto-optic memory technique A of the crystal dielectric tensors are εA, xx=εA, yy=εA, zz
=1.96, εA, xz=-εA, zx=i0.4, εA, xy=εA, yx=εA, yz=εA, zy=0, thickness da=69.3nm, isotropic medium
Material B dielectric constant is εb=4, thickness db=152.8nm, lattice period is d=da+db=222.1nm, magneto-optic memory technique lacks
The dielectric tensors dielectric tensors for falling into layer C are εC, xx=εC, yy=εA, zz=1.96, εC, xz=-εC, zx=-i0.4, εC, xy=εC, yx=
εC, yz=εC, zy=0, thickness dc=150nm, background material is air.Attribute of the invention by changing defect layer, can be to it
Its light-wave band carries out nonreciprocal propagation, with good plasticity, and the present invention can not only realize the nonreciprocal propagation of light wave, and
And also there is filtering characteristic.
Further, magneto-optic memory technique defect layer institute's externally-applied magnetic field direction and one-dimensional magnetic photonic crystal magneto-optic memory technique is additional
Magnetic direction is opposite.
Further, the operating wavelength range of the crystal changes with the change of the thickness of defect layer.
Further, the crystal can make certain wavelength light beam oblique at a certain angle from defect one-dimensional magnetic photonic crystal side
Energy total transmissivity when penetrating, and be then totally reflected from the reverse oblique incidence of opposite side.
A kind of purposes with nonreciprocity characteristic defective magnetic photonic crystal, the crystal can be for design nonreciprocity
Optic communication device.
The relatively similar existing research of the present invention, with following technique effect：
(1) present invention can not only realize the nonreciprocal propagation of light wave, but also with filtering characteristic；
(2) present invention has good plasticity.By changing the attribute of defect layer, other light-wave bands can be carried out non-
Reciprocity is propagated, with good plasticity；
(3) present invention can be integrated with other devices, and using thin film preparation process, technology of preparing is ripe；
(4) present invention has very high optically isolated degree.
Brief description of the drawings
Fig. 1 provides the nonreciprocity structural representation of defect one-dimensional magnetic photonic crystal；
The thickness that Fig. 2 gives magneto-optic defect layer C is dc=140nm, forward entrance and reversely incident transmission spectrum；
The thickness that Fig. 3 gives magneto-optic defect layer C is dc=150nm, forward entrance and reversely incident transmission spectrum；
The thickness that Fig. 4 gives magneto-optic defect layer C is dc=160nm, forward entrance and reversely incident transmission spectrum；
Magnetic field intensity H in one-dimensional magnetic photonic crystal when Fig. 5 is light wave forward entranceyField pattern；
Fig. 6 is magnetic field intensity H in one-dimensional magnetic photonic crystal when light wave is reversely incidentyField pattern.
Embodiment
The embodiment that the present invention is furture elucidated below in conjunction with the accompanying drawings.
The present invention, including periodicity are that 26 1-D photon crystal and a defect layer are constituted.Wherein, 1-D photon crystal by
Magneto-optic memory technique and isotropic material are alternately constituted, and defect layer uses certain thickness magneto-optic material layer, and defect layer is located at whole
The particular model of structure centre.The present invention constitutes One-Dimensional Photonic Crystal Defect layer by magneto-optic memory technique, while certain wavelengths of electromagnetic
One side of 1-D photon crystal is incided at a certain angle to export in another side, and the electromagnetic wave of same wavelength is from another
Reversely incidence is then cut off completely for one side, realizes the performance that nonreciprocity is propagated.
As shown in figure 1, being modeled to 1-D photon crystal, model parameter is set.It is embodied as：Complete one-dimensional
Defect Rotating fields formation defect one-dimensional magnetic photonic crystal is set in magnetic photonic crystal, a kind of new one-dimensional magnetic photonic crystal is designed non-
Reciprocity structure.The dielectric tensors for setting magnet-optical medium A are εA, xx=εA, yy=εA, zz=1.96, εA, xz=-εA, zx=i0.4,
εA, yy=εA, yx=εA, yz=εA, yy=0, thickness da=69.3nm, dielectric layer B dielectric constant are εb=4, db=152.8nm,
Lattice period is d=da+db=222.1nm, defect layer C dielectric tensors dielectric tensors are εC, xx=εC, yy=εA, zz=1.96,
εC, xz=-εC, zx=-i0.4, εC, xy=εC, yx=εC, yz=εC, zy=0, dc=150nm, background material is air.
Defect layer use with photonic crystal magneto-optic memory technique identical material, but with being applied to the externally-applied magnetic field of magnetic photonic crystal
Direction is just on the contrary, prevent total Time-reversal symmetry from meeting, so as to realize structure nonreciprocity effect.
The present invention is during model emulation, using eigen matrix, under certain tangential wave vector component, the certain frequency of input
, there are Defect Modes in forbidden photon band in the electromagnetic spectrum of rate scope.As in Figure 2-4.Different defect layer C thickness is studied to right
The influence of forward entrance and reverse incident transmission spectrum, solid line represents forward entrance transmission spectrum, and dotted line represents reverse incident transmission spectrum.
It transmits spectral property as in Figure 2-4, and Fig. 2 is the thickness d of defect layerc=140nm, forward entrance and reversely incident transmission
The transmission peak wavelength of spectrum, forward entrance (solid line is represented) and reverse incidence (dotted line is represented) is respectively 775.9nm and 768.3nm.Fig. 3
For the thickness d of defect layerc=150nm, forward entrance and reversely incident transmission spectrum, forward entrance (solid line is represented) and reversely enter
The wavelength for penetrating (dotted line is represented) is respectively 781nm and 773.4nm.Fig. 4 is the thickness d of defect layerc=160nm, forward entrance and
Reverse incident transmission spectrum, forward entrance (solid line is represented) and the reversely wavelength of incident (dotted line is represented) be respectively 786.5nm with
778.7nm.Test result indicates that, the wavelength for the Defect Modes that different directions incidence occurs is different, the operating wavelength range of the crystal
Change with the change of the thickness of defect layer.Fig. 5 uses Finite element arithmetic wavelength for 22.3 degree of 781nm, incident angle
When light wave forward entrance defect layer C thickness is 150nm One-dimensional magneto-photonic crystal, magnetic field intensity HyField pattern；Fig. 6 is
It is 150nm for the reverse incident defect layer C of 781nm, 22.3 degree of incident angle light wave thickness to use Finite element arithmetic wavelength
One-dimensional magnetic photonic crystal when, magnetic field intensity HyField pattern.Test result indicates that, crystal can make certain wavelength light beam from lack
Energy total transmissivity when falling into the oblique incidence at a certain angle of one-dimensional magnetic photonic crystal side, and be then totally reflected from the reverse oblique incidence of opposite side,
Such a characteristic can be for design nonreciprocity optic communication device.Therefore, the present invention can not only realize the nonreciprocal propagation of light wave,
But also with filtering characteristic；Other light-wave bands can be carried out nonreciprocal pass by the attribute of the invention by changing defect layer
Broadcast, with good plasticity；The present invention can be integrated with other devices, and using thin film preparation process, technology of preparing is ripe；This
Invention is with very high optically isolated degree.
The present invention has structure popular, and technique is simple, the features such as feature is strong, flexible design, in optoisolator, ring of light row
Have wide practical use in terms of device.
Above-mentioned embodiment is used for illustrating the present invention, rather than limits the invention, the present invention's
In spirit and scope of the claims, any modifications and changes made to the present invention both fall within the protection model of the present invention
Enclose.
Claims (5)
1. a kind of defect magnetic photonic crystal with nonreciprocity characteristic, it is characterised in that including one-dimensional magnetic photonic crystal and magnetic
Luminescent material defect layer, the crystal structure is [A/B]m C[A/B]mA, the 1-D photon crystal is by magneto-optic memory technique A and isotropism
Dielectric material B is alternately constituted, and the magneto-optic memory technique C positioned at structure centre position is magneto-optic memory technique defect layer；The magneto-optic material
Expect that defect layer institute's externally-applied magnetic field direction and one-dimensional magnetic photonic crystal magneto-optic memory technique externally-applied magnetic field are in opposite direction.
2. the defect magnetic photonic crystal according to claim 1 with nonreciprocity characteristic, it is characterised in that：
Membrane system the periodicity m=13, the magneto-optic memory technique A of the crystal dielectric tensors are εa,xx=εa,yy=εa,zz=1.96,
εa,xz=-εa,zx=i0.4, εa,xy=εa,yx=εa,yz=εa,zy=0, thickness da=69.3nm；
The dielectric constant of the isotropic medium material B is εb=4, thickness db=152.8nm, lattice period is d=da+db=
222.1nm；
The dielectric tensors of the magneto-optic memory technique defect layer C are εc,xx=εc,yy=εa,zz=1.96, εc,xz=-εc,zx=-i0.4,
εc,xy=εc,yx=εc,yz=εc,zy=0, thickness dc=150nm, background material is air.
3. the defect magnetic photonic crystal according to claim 1 with nonreciprocity characteristic, it is characterised in that the crystal
Operating wavelength range change with the change of the thickness of defect layer.
4. the defect magnetic photonic crystal according to claim 1 with nonreciprocity characteristic, it is characterised in that the crystal
Certain wavelength light beam can be enable from total transmissivity during the oblique incidence at a certain angle of defect one-dimensional magnetic photonic crystal side, and from opposite side
Reverse oblique incidence is then totally reflected.
5. a kind of defect magnetic photonic crystal as claimed in claim 1 with nonreciprocity characteristic is used as design nonreciprocity light
The purposes of communication device.
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105093571A (en) * | 2015-07-31 | 2015-11-25 | 南京邮电大学 | Large-incident-angle magnetic photonic crystal broadband photoisolator |
| CN105739135B (en) * | 2016-03-25 | 2018-04-10 | 南京邮电大学 | The magneto optic isolator prepared using low-k Meta Materials |
| CN108538933A (en) * | 2018-05-11 | 2018-09-14 | 南京工业大学 | A kind of magneto-optic memory technique micro-structure photovoltaic radiator with nonreciprocity |
| CN108649304B (en) * | 2018-07-03 | 2024-05-10 | 南京林业大学 | Electromagnetic wave isolator based on magneto-optical medium |
| CN111580198B (en) * | 2020-05-22 | 2021-12-31 | 中国科学院上海技术物理研究所 | Ultra-wide cut-off narrow band-pass filter based on Tamm state induction |
| CN113917715A (en) * | 2021-09-07 | 2022-01-11 | 安徽工程大学 | Non-reciprocal heat radiator based on magneto-optical crystal heterostructure |
| CN113625478B (en) * | 2021-09-14 | 2023-11-10 | 青岛大学 | Magneto-optical modulator |
| CN113784491B (en) * | 2021-09-22 | 2023-02-14 | 南京信息工程大学 | Plasma electromagnetic parameter measuring method based on defect microwave photonic crystal |
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| CN103123421A (en) * | 2013-03-04 | 2013-05-29 | 太原理工大学 | One-dimensional magnetic photonic crystal for achieving broadband optical isolation |
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