CN104466337A - Terahertz signal coupling device - Google Patents
Terahertz signal coupling device Download PDFInfo
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- CN104466337A CN104466337A CN201410651908.9A CN201410651908A CN104466337A CN 104466337 A CN104466337 A CN 104466337A CN 201410651908 A CN201410651908 A CN 201410651908A CN 104466337 A CN104466337 A CN 104466337A
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Abstract
The invention provides a terahertz signal coupling device. The device comprises a quasi optical cavity formed by a horn antenna with a rectangular waveguide serving as a port and a plane mirror, and a chip arranged at the position of the loop of a quasi optical cavity resonance standing wave, capable of obtaining maximum and even coupling strength and provided with a terahertz array element in an integrated mode, wherein the chip is made with a crystal material serving as the substrate, the resonance mode and resonance frequency of the chip serving as a dielectric resonator are determined through electromagnetic field simulation, the array of the integrated terahertz array element is arranged at the position of the loop of a resonance standing wave located on the center line of the chip so that maximum coupling strength can be obtained, and effective coupling between the terahertz array element on the chip and a waveguide transmission line is achieved through the matching between the resonance mode of the chip serving as the dielectric resonator and the resonance mode of the quasi optical cavity formed by the horn antenna and the plane mirror. By the adoption of the device, effective coupling of the integrated array element on the chip and the normal microwave transmission line during engineering application is achieved.
Description
Technical field
The invention relates to one in conjunction with quasi-optics principle, realize the tunable Terahertz transmission apparatus of ultra-wideband, be specially adapted to the device of the conventional microwave transmission line coupling such as the integrated array element of Terahertz frequency range and waveguide.
Background technology
Terahertz frequency range is an electromagnetic wave frequency range having very much scientific research value, and it, between millimeter wave frequency band and infrared ray frequency range, belongs to far infrared band.The application of Terahertz is except terahertz emission source, and Terahertz transmission apparatus, outside the Primary Components such as terahertz detector, also must solve the coupled problem between different components.Because material includes abundant physics and chemistry information in the transmitting of Terahertz frequency range, reflection and transmitted spectrum, and the peculiar properties such as THz wave has, and wavelength is short, good directionality, photon energy are low, high-penetrability, therefore Terahertz Technology becomes the focus of international research gradually.It is in basic research fields such as physics, chemistry, astronomy, life science and medical science, and the Applied research fields such as field such as safety inspection, Non-Destructive Testing, bio-imaging, environmental monitoring, Food Inspection, environmental monitoring, medical diagnosis, radar-reconnaissance, satellite communication and astronomical observation all have huge scientific research value.Present stage, the terahertz emission source problems such as also ubiquity power is little, efficiency is low; And hot background noise is relatively high, highly sensitive means are needed to detect terahertz signal, so just have higher requirement with being coupled to the high efficiency of transmission of THz wave.For the launching and receiving of terahertz signal, can significantly improve transmitting power or receiving sensitivity by the mode setting up array.Meanwhile, in view of Terahertz band wavelength is shorter, generally in submillimeter magnitude, the High Density Integration of the array element of large scale array can be realized, hundreds and thousands of array elements are integrated on a chip.But, how to realize the efficient coupling of integrated array element and conventional microwave transmission line, just become the difficult problem urgently broken through.
At present, the coupling process extensively adopted in Terahertz frequency range can be roughly divided into two classes, and a class is that the microwave coupling method of routine is extended to Terahertz frequency range; Another kind of is use for reference quasi-optical energy coupling method to be applied to Terahertz frequency range.For first kind method, the efficient coupling of the transmission line such as array element and waveguide on chip be realized, often adopt the methods such as Waveguide-microbelt transition, coplanar antennae.But along with the rising of frequency, loss and the metallic surface loss of Conventional substrate increase rapidly; Meanwhile, because high band wavelength is shorter, be also difficult to realize to the machining accuracy of micro-band and metallic cavity.Therefore, first kind method is often confined to Asia-Pacific hertz frequency range, i.e. 0.1THz ~ 1THz frequency range.For Equations of The Second Kind method, often adopt the quasi-optics methods such as throwing face mirror, lens to carry out appropriate design light path, realize the efficient coupling of energy.The method can cover whole Terahertz frequency range, but is generally used for 1THz ~ 10THz frequency range.And, how to realize the efficient coupling of multiple array elements of large scale array on chip, especially ensure the synchronism of phase place; And how perfect compatible with the microwave transmission line of routine, also rationally do not solved.Therefore, in Terahertz frequency range, realize the difficult problem faced in the efficient coupling of integrated array element and conventional microwave transmission line on chip or engineer applied.
Summary of the invention
The present invention seeks to the weak point existed for above-mentioned prior art, there is provided a kind of structure simple, be easy to processing realize, be easy to operation tuning, operating frequency ultra-wide, stiffness of coupling are high, phase synchronism good, the array element of the large scale array be integrated on chip and waveguide can be realized efficient coupling, improve the efficiency of the launching and receiving of terahertz signal, particularly can be applicable to whole 0.1THz ~ 10THz Terahertz frequency range, and coupling frequency and the adjustable terahertz signal coupling device of stiffness of coupling.
Above-mentioned purpose of the present invention can be achieved by the following technical programs, a kind of terahertz signal coupling device, comprise with rectangular waveguide is the horn antenna of port and the quasi optical cavity of level crossing formation, and be placed in quasi optical cavity resonance standing wave antinode place, obtain the chip that maximum and even stiffness of coupling is integrated with Terahertz array element, it is characterized in that: chip is prepared by substrate with crystalline material, as dielectric resonator, determines its mode of resonance and resonance frequency by electromagnetic-field simulation; The antinode place of resonance standing wave on the center line that the array of integrated Terahertz array element is prepared in chip, to obtain maximum stiffness of coupling; Utilize mating of the mode of resonance of the quasi optical cavity formed with horn antenna and level crossing as the mode of resonance of the chip of dielectric resonator, realize the efficient coupling of Terahertz array element and waveguide transmission line on chip.
The present invention has following beneficial effect compared to prior art:
Structure is simple, is easy to processing, is easy to operation.The present invention take rectangular waveguide as the quasi optical cavity that the horn antenna of port and a level crossing are formed, the chip being integrated with Terahertz array element is placed in the antinode place of its resonance standing wave, make full use of mating of the mode of resonance of the quasi optical cavity that the mode of resonance as the chip of dielectric resonator is formed with horn antenna and level crossing, realize the efficient coupling of Terahertz array element and waveguide transmission line on chip, device used is few, structure is simple, the collimator optical system formed is succinct, manufacture process requirement is low, be easy to processing, being easy to operation, to solve prior art manufacture process requirement high, practical application is more difficult, be difficult to the problems such as processing.
Be easy to operation tuning, operating frequency is wide.Integrated array element is placed in the midline position place of chip by the present invention, makes it be in the antinode of multiple mode of resonance on chip simultaneously.By regulating the relative position of chip, level crossing and horn antenna three, the mode of resonance that the mode of resonance making chip different is corresponding to quasi optical cavity is respectively mated, and realizes operating frequency adjustable.And, the crystalline material that Terahertz chip employing high-frequency loss is low, dielectric constant is low, thickness is thin is as substrate, even if like this in Terahertz frequency range, chip also can have multiple simple mode of resonance, be easy to mate with quasi optical cavity mode of resonance, and covering frequence wide ranges.Solve integrated array element in engineer applied chips single with the frequency that is coupled of conventional microwave transmission line, be difficult to tuning problem.
Stiffness of coupling is high, strength tunable.The array element of the large scale array be integrated on chip and waveguide can be realized efficient coupling by the present invention, improve the efficiency of the launching and receiving of terahertz signal.When the mode of resonance perfect matching of the mode of resonance of chip and quasi optical cavity, just achieve Terahertz array element integrated on chip and the efficient coupling of waveguide port.Experimental result shows, its coupling efficiency method used relative to prior art improves tens times.Meanwhile, by regulating the relative position of chip, level crossing and horn antenna three, carry out tuning stiffness of coupling easily, this is that prior art is difficult to realize.
Phase synchronism is good.The present invention is in conjunction with quasi-optical method, make full use of mating of the mode of resonance of the quasi optical cavity that the mode of resonance as the chip of dielectric resonator is formed with horn antenna and level crossing, realize the efficient coupling of Terahertz array element and waveguide transmission line on chip, and the array element of the large scale array be integrated on chip is in the antinode of same chip mode of resonance, it is synchronous for realizing with the phase place that waveguide transmission line is coupled, solve conventional collimator optical system due to light path design complexity, not easy to operate, be difficult to synchronously be coupled with array element multiple in large scale array, the problems such as inconvenience and conventional microwave transmission line compatibility.
The present invention is specially adapted to the whole Terahertz frequency range of 0.1THz ~ 10THz, and coupling frequency and the adjustable terahertz signal coupling device of stiffness of coupling.
Accompanying drawing explanation
Fig. 1 is the decomposing schematic representation of terahertz signal coupling device of the present invention.
In figure: 1 rectangular waveguide, 2 horn antennas, 3 chips, 4 level crossings.
Embodiment
Below in conjunction with the terahertz signal detection system of the Schottky diode serial array be biased based on zero-pressure, the present invention is further described.
Consult Fig. 1.In a most preferred embodiment described below, terahertz signal coupling device comprises a quasi optical cavity formed with rectangular waveguide 1 horn antenna 2 that is port and a level crossing 4, and preparation has the chip 3 of Terahertz array element.Chip self just uses as a dielectric resonator.Chip 3 is the electrodes adopting semiconductor microactuator processing technology to prepare Schottky diode serial array and be biased for zero-pressure on High Resistivity Si substrate.Mode of resonance as the chip of dielectric resonator and resonance frequency is determined by electromagnetic-field simulation.And array being placed in the antinode place, center of the resonance standing wave of chip, i.e. the center line of chip, has made it possible to multiple mode of resonance optional, so that it is tunable to realize operating frequency, is namely operated in resonant frequency point.The integrated array element of Terahertz chip possesses terahertz signal to produce the device with detection perform; Array structure can be series, parallel, and other arbitrary structures.The crystalline material that Terahertz chip employing high-frequency loss is low, dielectric constant is low, thickness is thin is as substrate, even if like this in Terahertz frequency range, chip also can have multiple simple mode of resonance, is easy to mate with quasi optical cavity mode of resonance, and covering frequence wide ranges.
Utilize a horn antenna 2 and a level crossing 4 to form quasi optical cavity, obtained the mode of resonance of above selected operating frequency by electromagnetic-field simulation, to determine the anti-node location of the Distance geometry resonance standing wave between horn antenna and level crossing.Distance between the waveguide port of horn antenna and level crossing should be the integral multiple of the half-wavelength into operating frequency.Meanwhile, the chip 3 being integrated with Terahertz array element is placed in the antinode place of quasi optical cavity resonance standing wave, antinode place distance level crossing is (N=0, (N/2+1/4) wavelength place of operating frequency, 1,2 ...), to obtain maximum and uniform stiffness of coupling.
After the relative position as described above of horn antenna 2, level crossing 4 and chip 3 three is determined, chip mode of resonance is by the perfect matching with quasi optical cavity mode of resonance.By the rectangular waveguide port one feed-in terahertz signal to be measured of horn antenna 2, the resonance standing wave of the quasi optical cavity that horn antenna 2 is formed with level crossing 4 will be evoked.Because the mode of resonance of chip 3 is also mated with the mode of resonance of quasi optical cavity, the resonance of the chip 3 as dielectric resonant chamber equally also can be evoked.The serial array be made up of terahertz signal detection array element Schottky diode is in the wave amplitude place, center of chip 3 resonance standing wave, can receive terahertz signal to be measured to energy even and Phase synchronization, so just achieve the efficient coupling of waveguide port 1 and the array element of serial array on chip 3.Meanwhile, just can read the phase locked voltage signal induced of each array element of the Schottky diode serial array that zero-pressure is biased from the electrode chip 3, make its detection sensitivity compare single Schottky diode and be significantly improved.
Claims (6)
1. a terahertz signal coupling device, comprise with rectangular waveguide is the horn antenna of port and the quasi optical cavity of level crossing formation, and be placed in quasi optical cavity resonance standing wave antinode place, obtain the chip that maximum and even stiffness of coupling is integrated with Terahertz array element, it is characterized in that: chip is prepared by substrate with crystalline material, as dielectric resonator, determine its mode of resonance and resonance frequency by electromagnetic-field simulation; The antinode place of resonance standing wave on the center line that the array of integrated Terahertz array element is prepared in chip, to obtain maximum stiffness of coupling; Utilize mating of the mode of resonance of the quasi optical cavity formed with horn antenna and level crossing as the mode of resonance of the chip of dielectric resonator, realize the efficient coupling of Terahertz array element and waveguide transmission line on chip.
2. terahertz signal coupled system as claimed in claim 1, it is characterized in that: determine mode of resonance as the chip of dielectric resonator and resonance frequency by electromagnetic-field simulation, and Terahertz array element is placed in the antinode place, center of the resonance standing wave of chip, the i.e. center line of chip, make it possible to multiple mode of resonance optional, so that it is tunable to realize operating frequency, be namely operated in resonant frequency point.
3. terahertz signal coupling device as claimed in claim 2, it is characterized in that: by rectangular waveguide port (1) the feed-in terahertz signal to be measured of horn antenna (2), evoke the resonance of the resonance of quasi optical cavity that horn antenna (2) and level crossing (4) form and the chip (3) as dielectric resonator.
4. terahertz signal coupling device as claimed in claim 1, it is characterized in that: be that port axially connects horn antenna with rectangular waveguide, level crossing (4) is parallel with described chip (3), just to the flared end of horn antenna, between the quasi optical cavity that chip (3) is formed at level crossing and horn antenna.
5. terahertz signal coupling device as claimed in claim 2, is characterized in that: the array element of Terahertz array is in the antinode place, center of chip (3) resonance standing wave, realizes the efficient coupling of array element in waveguide port (1) and the upper array of chip (3).
6. terahertz signal coupling device as claimed in claim 1, is characterized in that: the integrated array element of described Terahertz chip is the device possessing terahertz signal generation or detection perform; Array structure can be series, parallel, and other arbitrary structures.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106646868A (en) * | 2017-01-18 | 2017-05-10 | 河南师范大学 | Near field optical antenna capable of uniform magnetic field reinforcement |
CN110703243A (en) * | 2019-09-29 | 2020-01-17 | 天津大学 | Novel silicon-based terahertz active array imaging technology based on regenerative reception principle |
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CN200947525Y (en) * | 2006-09-27 | 2007-09-12 | 天津大学 | All solid state tunable narrow band THz wave light source |
CN204289675U (en) * | 2014-11-18 | 2015-04-22 | 中国电子科技集团公司第十研究所 | Full frequency band covers the coupling transmission of Terahertz frequency range |
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Patent Citations (2)
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CN200947525Y (en) * | 2006-09-27 | 2007-09-12 | 天津大学 | All solid state tunable narrow band THz wave light source |
CN204289675U (en) * | 2014-11-18 | 2015-04-22 | 中国电子科技集团公司第十研究所 | Full frequency band covers the coupling transmission of Terahertz frequency range |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106646868A (en) * | 2017-01-18 | 2017-05-10 | 河南师范大学 | Near field optical antenna capable of uniform magnetic field reinforcement |
CN106646868B (en) * | 2017-01-18 | 2022-07-22 | 河南师范大学 | Near-field optical antenna with uniformly enhanced magnetic field |
CN110703243A (en) * | 2019-09-29 | 2020-01-17 | 天津大学 | Novel silicon-based terahertz active array imaging technology based on regenerative reception principle |
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