CN104465831A - 一种建筑光伏组件用胶膜 - Google Patents
一种建筑光伏组件用胶膜 Download PDFInfo
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- CN104465831A CN104465831A CN201410791736.5A CN201410791736A CN104465831A CN 104465831 A CN104465831 A CN 104465831A CN 201410791736 A CN201410791736 A CN 201410791736A CN 104465831 A CN104465831 A CN 104465831A
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- 239000002313 adhesive film Substances 0.000 title claims abstract description 48
- 239000011347 resin Substances 0.000 claims abstract description 23
- 229920005989 resin Polymers 0.000 claims abstract description 23
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 9
- 239000007822 coupling agent Substances 0.000 claims abstract description 6
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 3
- 239000012528 membrane Substances 0.000 claims description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000006097 ultraviolet radiation absorber Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 238000000748 compression moulding Methods 0.000 abstract 1
- 229940124543 ultraviolet light absorber Drugs 0.000 abstract 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 230000005693 optoelectronics Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229940111759 benzophenone-2 Drugs 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229960001173 oxybenzone Drugs 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开了一种建筑光伏组件用胶膜,用于晶体硅电池片与TPT背板粘接的第二胶膜层,包括:改性EVA胶膜层、和压合在所述改性EVA胶膜层上下两面的纳米银离子薄膜层,所述改性EVA胶膜层是由改性EVA树脂经模压成型工艺制成的,所述改性EVA树脂包括的原料及各原料的质量百分比为:EVA树脂90%-95%、固化剂2%-4%、紫外线吸收剂2%-5%、偶联剂1%-2%。通过上述方式,本发明能避免与第一EVA胶膜层熔融后发生互溢现象,进而能避免可见光进入建筑物中,同时能提高建筑光伏组件的光电转化率。
Description
技术领域
本发明涉及太阳能光伏组件封装技术领域,特别是涉及一种建筑光伏组件用胶膜。
背景技术
光伏组件的结构从上到下由钢化玻璃面板、第一胶膜层、晶体硅电池片、第二胶膜层、TPT背板组成。在建筑光伏组件中,为了避免可见光透过组件中晶体硅电池片的间隙射入到建筑物中,第二胶膜层需要与第一胶膜层使用不同的材质,即第二胶膜层除了和第一胶膜层一样需要具有良好的粘结力、抗紫外线老化能力外,还需要有具有一定的反射性、遮光性和导热性,现有的技术方法是在EVA胶膜中添加功能性助剂制得改性胶膜作为第二胶膜层使用,但是在组件层压工艺中,第一胶膜层和第二胶膜层高温熔融后会互溢,从而影响第一胶膜层的透光性,降低建筑光伏组件的光电转化率。
发明内容
本发明主要解决的技术问题是提供一种建筑光伏组件用胶膜,用于晶体硅电池片与TPT背板粘接的第二胶膜层,能避免与第一EVA胶膜层熔融后发生互溢现象,进而能避免可见光进入建筑物中,同时能提高建筑光伏组件的光电转化率。
为解决上述技术问题,本发明采用的一个技术方案是:提供一种建筑光伏组件用胶膜,用于晶体硅电池片与TPT背板粘接的第二胶膜层,包括:改性EVA胶膜层、和压合在所述改性EVA胶膜层上下两面的纳米银离子薄膜层,所述改性EVA胶膜层是由改性EVA树脂经模压成型工艺制成的,所述改性EVA树脂包括的原料及各原料的质量百分比为:EVA树脂90%-95%、固化剂2%-4%、紫外线吸收剂2%-5%、偶联剂1%-2%。
在本发明一个较佳实施例中,所述EVA树脂中VA的含量为30%-35%。
在本发明一个较佳实施例中,所述改性EVA胶膜的厚度为0.3-0.5mm。
在本发明一个较佳实施例中,所述纳米银离子薄膜层的厚度为50-70nm。
本发明的有益效果是:本发明采用改性EVA胶膜与纳米银离子薄膜复合而成的改性复合EVA胶膜作为第二胶膜层,能避免与第一EVA胶膜层熔融后发生互溢现象,进而能避免可见光进入建筑物中,同时能提高建筑光伏组件的光电转化率。
具体实施方式
下面对本发明的较佳实施例进行详细阐述,以使本发明的优点和特征能更易于被本领域技术人员理解,从而对本发明的保护范围做出更为清楚明确的界定。
本发明实施例包括:
实施例一:
一种建筑光伏组件用胶膜,用于晶体硅电池片与TPT背板粘接的第二胶膜层,包括:改性EVA胶膜层、和压合在所述改性EVA胶膜层上下两面的纳米银离子薄膜层,所述改性EVA胶膜层是由改性EVA树脂经模压成型工艺制成的,所述改性EVA树脂包括的原料及各原料的质量百分比为:EVA树脂90%、二甲基正己烷4%、正辛氧基二苯甲酮5%、偶联剂1%。
其中,所述EVA树脂中VA的含量为33%。
所述改性EVA胶膜的厚度为0.3mm。
所述纳米银离子薄膜层的厚度为70nm。
实施例二:
一种建筑光伏组件用胶膜,用于晶体硅电池片与TPT背板粘接的第二胶膜层,包括:改性EVA胶膜层、和压合在所述改性EVA胶膜层上下两面的纳米银离子薄膜层,所述改性EVA胶膜层是由改性EVA树脂经模压成型工艺制成的,所述改性EVA树脂包括的原料及各原料的质量百分比为:EVA树脂92%、二甲基正己烷3%、正辛氧基二苯甲酮3%、偶联剂2%。
其中,所述EVA树脂中VA的含量为33%。
所述改性EVA胶膜的厚度为0.4mm。
所述纳米银离子薄膜层的厚度为60nm。
实施例三:
一种建筑光伏组件用胶膜,用于晶体硅电池片与TPT背板粘接的第二胶膜层,包括:改性EVA胶膜层、和压合在所述改性EVA胶膜层上下两面的纳米银离子薄膜层,所述改性EVA胶膜层是由改性EVA树脂经模压成型工艺制成的,所述改性EVA树脂包括的原料及各原料的质量百分比为:EVA树脂95%、二甲基正己烷2%、正辛氧基二苯甲酮2%、偶联剂1%。
其中,所述EVA树脂中VA的含量为33%。
所述改性EVA胶膜的厚度为0.5mm。
所述纳米银离子薄膜层的厚度为50nm。
本发明揭示了一种建筑光伏组件用胶膜,采用改性EVA胶膜与纳米银离子薄膜复合而成的改性复合EVA胶膜作为第二胶膜层,能避免与第一EVA胶膜层熔融后发生互溢现象,进而能避免可见光进入建筑物中,同时能提高建筑光伏组件的光电转化率。
以上所述仅为本发明的实施例,并非因此限制本发明的专利范围,凡是利用本发明说明书内容所作的等效结构或等效流程变换,或直接或间接运用在其他相关的技术领域,均同理包括在本发明的专利保护范围内。
Claims (4)
1.一种建筑光伏组件用胶膜,用于晶体硅电池片与TPT背板粘接的第二胶膜层,其特征在于,包括:改性EVA胶膜层、和压合在所述改性EVA胶膜层上下两面的纳米银离子薄膜层,所述改性EVA胶膜层是由改性EVA树脂经模压成型工艺制成的,所述改性EVA树脂包括的原料及各原料的质量百分比为:EVA树脂90%-95%、固化剂2%-4%、紫外线吸收剂2%-5%、偶联剂1%-2%。
2.根据权利要求1所述的建筑光伏组件用胶膜,其特征在于,所述EVA树脂中VA的含量为30%-35%。
3.根据权利要求1所述的建筑光伏组件用胶膜,其特征在于,所述改性EVA胶膜的厚度为0.3-0.5mm。
4.根据权利要求1所述的建筑光伏组件用胶膜,其特征在于,所述纳米银离子薄膜层的厚度为50-70nm。
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CN103360986A (zh) * | 2012-03-31 | 2013-10-23 | 江南大学 | 一种新型高导热太阳能组件封装材料 |
CN103552314A (zh) * | 2013-11-07 | 2014-02-05 | 英利集团有限公司 | 太阳能电池背板及具有其的太阳能电池组件 |
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2014
- 2014-12-19 CN CN201410791736.5A patent/CN104465831A/zh active Pending
Patent Citations (10)
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EP1150357B1 (en) * | 1998-12-07 | 2005-03-02 | Bridgestone Corporation | Cover material for solar cell |
US20080185033A1 (en) * | 2007-02-06 | 2008-08-07 | Kalejs Juris P | Solar electric module |
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