CN104465667A - Flexible panel, method for manufacturing flexible panel and flexile display device - Google Patents

Flexible panel, method for manufacturing flexible panel and flexile display device Download PDF

Info

Publication number
CN104465667A
CN104465667A CN201410718651.4A CN201410718651A CN104465667A CN 104465667 A CN104465667 A CN 104465667A CN 201410718651 A CN201410718651 A CN 201410718651A CN 104465667 A CN104465667 A CN 104465667A
Authority
CN
China
Prior art keywords
flexible panel
resilient coating
amorphous silicon
flexible
silicon membrane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410718651.4A
Other languages
Chinese (zh)
Inventor
高涛
毛雪
杨静
陈立强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201410718651.4A priority Critical patent/CN104465667A/en
Publication of CN104465667A publication Critical patent/CN104465667A/en
Pending legal-status Critical Current

Links

Abstract

The invention discloses a flexible panel, a method for manufacturing the flexible panel and a flexile display device. Due to the fact that a buffer layer is insulating and high in thermal conductivity, the insulating function is realized on one hand, and on the other hand, when laser crystallization is conducted on an amorphous silicon membrane on the buffer layer to form a polycrystalline silicon membrane, residual laser energy can still be dissipated quickly through the buffer layer high in thermal conductivity even if laser energy can not be absorbed totally by the amorphous silicon membrane. In this way, damage to a flexible substrate by the residual laser energy is avoided, and the performance of the flexible panel is guaranteed.

Description

A kind of flexible panel, its preparation method and flexible display device
Technical field
The present invention relates to technical field of semiconductors, espespecially a kind of flexible panel, its preparation method and flexible display device.
Background technology
Flexible display technologies is the study hotspot in Display Technique field in recent years, because it has thinner, more anti-vibration, lighter advantage, will be widely used in civil area and military field.Flexible Displays may be defined as the substrate making display floater by very thin flexible substrate, and it can bend to radius of curvature and only have several centimetres or less and can not damage the Presentation Function of display floater.
At present, active layer technology is the core technology of display floater, low temperature polycrystalline silicon (Low TemperaturePoly-Silicon, LTPS) thin-film transistor (Thin Film Transistor, TFT) owing to having very high electron mobility (most high energy reaches >100cm2/Vs) and stability, size is little, parasitic capacitance is lower, aperture opening ratio comparatively advantages of higher be widely used in display floater.And the preparation key of low-temperature polysilicon film transistor is polysilicon (Poly-Si) film that processability is excellent, Excimer-Laser Crystallization method (ELA) owing to being very suitable for the preparation of low-temperature polysilicon film transistor in crystallization time, crystallite dimension, crystallization temperature etc., therefore be the mainstream technology in current crystallization method, and, due to laser during crystallization be irradiated to substrate energy the overwhelming majority absorb by amorphous silicon (A-Si), to flexible base, board without any damage, be therefore also specially adapted to the LTPS crystallization process on flexible base, board.
Existing flexible panel as shown in Figure 1, comprises the flexible base, board 01 set gradually, insulating barrier 02 and polysilicon membrane 03.Be generally form flexible base, board successively, insulating barrier and amorphous silicon membrane on a hard bearing substrate during preparation, and then adopt Excimer-Laser Crystallization method to carry out laser crystallization process to amorphous silicon membrane, make amorphous silicon membrane become polysilicon membrane.But in the process of preparation, inevitably the particles 04 such as dust can be introduced when forming flexible base, board 01 or amorphous silicon membrane, these particles 04 can cause the rete near it thinning, thus cause when carrying out laser crystallization process to amorphous silicon membrane, laser energy can not all be absorbed by amorphous silicon membrane, thus damage flexible base, board.
Summary of the invention
In view of this, embodiments provide a kind of flexible panel, its preparation method and flexible display device, in order to prevent when forming polysilicon membrane, because laser energy just can not be absorbed by amorphous silicon membrane completely, and laser energy is caused to damage flexible base, board.
Therefore, a kind of flexible panel of the embodiment of the present invention, comprises flexible base, board and the resilient coating be positioned at successively on described flexible base, board and polysilicon membrane; Wherein, described polysilicon membrane is formed after laser crystallization process by the amorphous silicon membrane be formed on described resilient coating;
Described resilient coating has insulating properties and high-termal conductivity.
Preferably, for the ease of implementing, in the above-mentioned flexible panel that the embodiment of the present invention provides, described resilient coating comprises and is positioned at heat-conducting layer on described flexible base, board and insulating barrier successively; Wherein,
The conductive coefficient of described heat-conducting layer is more than or equal to 1000 watts every meter and often opens.
Preferably, in order to mate the stress between flexible base, board and insulating barrier, to avoid breaking of flexible base, board, in the above-mentioned flexible panel that the embodiment of the present invention provides, the material of described heat-conducting layer is Graphene or carbon nano-tube.
Preferably, in the above-mentioned flexible panel that the embodiment of the present invention provides, the thickness of described insulating barrier is 250nm-400nm.
Or, preferably, in order to simplify manufacture craft, resilient coating is formed by a kind of rete not only having insulating properties but also have a high-termal conductivity, in the above-mentioned flexible panel that the embodiment of the present invention provides, the material of described resilient coating is the insulating polymeric material doped with high heat conducting nano particle; Wherein,
The conductive coefficient of described high heat conducting nano particle is more than or equal to 1000 watts every meter and often opens;
The resistivity of described insulating polymeric material is more than or equal to 10 9europe centimetre.
Preferably, in the above-mentioned flexible panel that the embodiment of the present invention provides, the material of described high heat conducting nano particle is metal, metal oxide or metal nitride.
Preferably, in the above-mentioned flexible panel that the embodiment of the present invention provides, described insulating polymeric material is inorganic macromolecule compound or organic high molecular compound.
Preferably, in the above-mentioned flexible panel that the embodiment of the present invention provides, described inorganic macromolecule compound is the macromolecular compound of halide, sulfide, oxide or silane.
Preferably, in the above-mentioned flexible panel that the embodiment of the present invention provides, described organic high molecular compound is olefinic organic class, organic alkynes class, organic resin class, organic ethers, organic acid ester or polyaniline.
Correspondingly, the embodiment of the present invention additionally provides a kind of preparation method of flexible panel, comprising:
Hard bearing substrate forms flexible base, board;
Described flexible base, board forms resilient coating, and wherein, described resilient coating has insulating properties and high-termal conductivity;
Described resilient coating forms amorphous silicon membrane;
Laser crystallization process is carried out to described amorphous silicon membrane, makes described amorphous silicon membrane become polysilicon membrane.
Preferably, in the above-mentioned preparation method that the embodiment of the present invention provides, described flexible base, board forms resilient coating, specifically comprises:
Described flexible base, board forms heat-conducting layer, and the conductive coefficient of described heat-conducting layer is more than or equal to 1000 watts every meter and often opens;
Described heat-conducting layer forms insulating barrier.
Preferably, in the above-mentioned preparation method that the embodiment of the present invention provides, the material of described resilient coating is the insulating polymeric material doped with high heat conducting nano particle; Wherein,
The conductive coefficient of described high heat conducting nano particle is more than or equal to 1000 watts every meter and often opens;
The resistivity of described insulating polymeric material is more than or equal to 10 9europe centimetre.
Preferably, in the above-mentioned preparation method that the embodiment of the present invention provides, after described resilient coating forms amorphous silicon membrane, before laser crystallization process is carried out to described amorphous silicon membrane, also comprise:
Carry out thermal anneal process to described amorphous silicon membrane, to remove the hydrogen atom in amorphous silicon membrane, when preventing amorphous silicon membrane from carrying out crystallization, hydrogen atom, because of spilling of being heated, damages crystallization effect.
Correspondingly, the embodiment of the present invention additionally provides a kind of flexible display device, comprises the above-mentioned flexible panel that the embodiment of the present invention provides.
The above-mentioned flexible panel that the embodiment of the present invention provides, its preparation method and flexible display device, because resilient coating has insulating properties and high-termal conductivity, therefore, this resilient coating not only can play the effect of insulation, and when by carrying out laser crystallization process formation polysilicon membrane to the amorphous silicon membrane on this resilient coating, even if laser energy can not be absorbed by amorphous silicon membrane completely, remaining laser energy also can be diffused away rapidly by the resilient coating with high-termal conductivity, thus avoid the damage of remaining laser energy to flexible base, board, ensure that the performance of flexible panel.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing flexible panel
One of structural representation of the flexible panel that Fig. 2 provides for the embodiment of the present invention;
The structural representation two of the flexible panel that Fig. 3 provides for the embodiment of the present invention;
The schematic flow sheet of the preparation method of the flexible panel that Fig. 4 provides for the embodiment of the present invention;
The preparation method that Fig. 5 a to Fig. 5 f is respectively the flexible panel shown in Fig. 3 performs the structural representation after each step.
Embodiment
Below in conjunction with accompanying drawing, the embodiment of flexible panel, its preparation method and flexible display device that the embodiment of the present invention provides is described in detail.
In accompanying drawing, each layer film thickness and area size shape do not reflect the actual proportions of flexible panel, and object just signal illustrates content of the present invention.
A kind of flexible panel that the embodiment of the present invention provides, as shown in Figure 2, comprises flexible base, board 10 and the resilient coating 11 that is positioned at successively on this flexible base, board 10 and polysilicon membrane 12; Wherein, polysilicon membrane 12 is formed after laser crystallization process by the amorphous silicon membrane be formed on resilient coating 11;
This resilient coating 11 has insulating properties and high-termal conductivity.
The above-mentioned flexible panel that the embodiment of the present invention provides, because resilient coating has insulating properties and high-termal conductivity, therefore, this resilient coating not only can play the effect of insulation, and when by carrying out laser crystallization process formation polysilicon membrane to the amorphous silicon membrane on this resilient coating, even if laser energy can not be absorbed by amorphous silicon membrane completely, remaining laser energy also can be diffused away rapidly by the resilient coating with high-termal conductivity, thus avoid the damage of remaining laser energy to flexible base, board, ensure that the performance of flexible panel.
It should be noted that, in the above-mentioned flexible panel that the embodiment of the present invention provides, high-termal conductivity refers to that conductive coefficient is equal to or greater than the performance that 1000 watts every meter is often opened (W/mK).
Particularly, in the specific implementation, in the above-mentioned flexible panel that the embodiment of the present invention provides, as shown in Figure 3, resilient coating 11 comprises and is positioned at heat-conducting layer 111 on flexible base, board 10 and insulating barrier 112 successively; Wherein, the conductive coefficient of heat-conducting layer 111 is more than or equal to 1000 watts every meter and often opens.Here the Main Function of heat-conducting layer the laser energy of remnants can be carried out rapid diffusion, to avoid the damage to flexible base, board; Acting in prior art of insulating barrier is identical, is not described further at this.
Preferably, in the above-mentioned flexible panel that the embodiment of the present invention provides, the material of heat-conducting layer is preferably Graphene or carbon nano-tube.This is because Graphene and carbon nano-tube all have excellent bending property, therefore the heat-conducting layer adopting Graphene or carbon nano-tube to make can well mate the stress between flexible base, board and insulating barrier, thus the problem that the flexible base, board avoiding stress to cause breaks.
Preferably, in the above-mentioned flexible panel that the embodiment of the present invention provides, the material of insulating barrier can be the composite material etc. of silica (SiOx), silicon nitride (SiNx) or silica and silicon nitride, in this no limit.
Preferably, in the above-mentioned flexible panel that the embodiment of the present invention provides, THICKNESS CONTROL effect between 250nm-400nm of insulating barrier is good, in this no limit.
Or preferably, in order to simplify manufacture craft, in the above-mentioned flexible panel that the embodiment of the present invention provides, resilient coating is once formed by the material not only having insulating properties but also have a high-termal conductivity.Particularly, the material of resilient coating is the insulating polymeric material doped with high heat conducting nano particle; Wherein,
The conductive coefficient of high heat conducting nano particle is more than or equal to 1000 watts every meter and often opens;
The resistivity of insulating polymeric material is more than or equal to 10 9europe centimetre (Ω cm).
Particularly, in the above-mentioned flexible panel that the embodiment of the present invention provides, the material of high heat conducting nano particle can be metal, metal oxide or metal nitride etc.
Further, in the above-mentioned flexible panel that the embodiment of the present invention provides, the material of high heat conducting nano particle is one of in aluminium nitride, aluminium oxide, zinc oxide and boron nitride or combination.
Particularly, in the above-mentioned flexible panel that the embodiment of the present invention provides, insulating polymeric material can be inorganic macromolecule compound or organic high molecular compound, in this no limit.
Further, in the above-mentioned flexible panel that the embodiment of the present invention provides, inorganic macromolecule compound can be the macromolecular compound of halide, sulfide, oxide or silane etc.
Further, in the above-mentioned flexible panel that the embodiment of the present invention provides, organic high molecular compound can be olefinic organic class, organic alkynes class, organic resin class, organic ethers, organic acid ester or polyaniline etc.
Particularly, in the above-mentioned flexible panel that the embodiment of the present invention provides, organic alkynes class is polyacetylene.
Particularly, in the specific implementation, in the above-mentioned flexible panel that the embodiment of the present invention provides, flexible base, board can be plastic base.Particularly, the material of plastic base can be PETG (Polyethylene Terephthalate, PET), PEN (PolyethyleneNaphthalate, PEN), Merlon (Polycarbonate, PC), polyether sulfone (Polyether Sulfone, and one or more combinations in the material such as polyimides (Polyimide, PI) PES).
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of preparation method of flexible panel, as shown in Figure 4, can comprise the following steps:
S101, on hard bearing substrate, form flexible base, board;
S102, form resilient coating on flexible substrates, wherein, resilient coating has insulating properties and high-termal conductivity;
S103, form amorphous silicon membrane on the buffer layer;
S104, laser crystallization process is carried out to amorphous silicon membrane, make amorphous silicon membrane become polysilicon membrane.
The preparation method of the above-mentioned flexible panel that the embodiment of the present invention provides, due to before formation amorphous silicon membrane, first form the resilient coating with insulating properties and high-termal conductivity on flexible substrates, therefore, follow-up laser crystallization process is carried out to amorphous silicon membrane time, even if laser energy can not be absorbed by amorphous silicon membrane completely, remaining laser energy also can be diffused away rapidly by the resilient coating with high-termal conductivity, thus avoid the damage of remaining laser energy to flexible base, board, ensure that the performance of flexible panel.
Particularly, in the above-mentioned preparation method that the embodiment of the present invention provides, flexible base, board can be plastic base.Further, the material of plastic base can be PETG (PolyethyleneTerephthalate, PET), PEN (Polyethylene Naphthalate, PEN), Merlon (Polycarbonate, PC), polyether sulfone (Polyether Sulfone, and one or more combinations in the material such as polyimides (Polyimide, PI) PES).
Further, above-mentioned flexible base, board can utilize the plastic solvent of solution shape to be coated with, and then baking-curing is formed, or utilizes binding agent to be attached on hard bearing substrate by plastic film by the mode attached to be formed.
Preferably, in the above-mentioned preparation method that the embodiment of the present invention provides, step S102 forms resilient coating on flexible substrates, specifically can comprise:
Form heat-conducting layer on flexible substrates, the conductive coefficient of heat-conducting layer is more than or equal to 1000 watts every meter and often opens;
Heat-conducting layer forms insulating barrier.
Preferably, in the above-mentioned preparation method that the embodiment of the present invention provides, the material of heat-conducting layer is Graphene or carbon nano-tube.
Particularly, in the specific implementation, in the above-mentioned preparation method that the embodiment of the present invention provides, when the material of heat-conducting layer is Graphene, Graphene can pass through the preparations such as oxidation-reduction method, carborundum (SiC) epitaxial growth method, vapour deposition process or organic synthesis method, in this no limit.
Particularly, in the specific implementation, in the above-mentioned preparation method that the embodiment of the present invention provides, when the material of heat-conducting layer is carbon nano-tube, carbon nano-tube can pass through the preparations such as graphite acr method, catalystic pyrolysis, laser evaporization method or chemical vapour deposition technique, in this no limit.
Particularly, in the specific implementation, in the above-mentioned preparation method that the embodiment of the present invention provides, insulating barrier can strengthen chemical vapour deposition technique (PECVD) preparation by using plasma.Particularly, the material of insulating barrier can be the compound etc. of silica (SiOx), silicon nitride (SiNx) or silica and silicon nitride.Corresponding reacting gas can be the mist of methane (SiH4), ammonia (NH3) and nitrogen (N2) or the mist of dichlorosilane (SiH2Cl2), ammonia (NH3) and nitrogen (N2), in this no limit.
Further, in the above-mentioned preparation method that the embodiment of the present invention provides, THICKNESS CONTROL effect between 250nm-400nm of insulating barrier is good.
Certainly, in the specific implementation, in order to simplify manufacture craft, resilient coating once can be formed by the material not only having insulating properties but also have a high-termal conductivity.Therefore, in the above-mentioned preparation method that the embodiment of the present invention provides, the material of resilient coating is the insulating polymeric material doped with high heat conducting nano particle; Wherein,
The conductive coefficient of high heat conducting nano particle is more than or equal to 1000 watts every meter and often opens;
The resistivity of insulating polymeric material is more than or equal to 10 9europe centimetre.
Particularly, in the above-mentioned preparation method that the embodiment of the present invention provides, the material of high heat conducting nano particle can be metal, metal oxide or metal nitride.Further, the material of high heat conducting nano particle can be one of in aluminium nitride, aluminium oxide, zinc oxide and boron nitride or combination.
Particularly, in the above-mentioned preparation method that the embodiment of the present invention provides, insulating polymeric material can be inorganic macromolecule compound or organic high molecular compound.Further, inorganic macromolecule compound can be the macromolecular compound of halide, sulfide, oxide or silane.Organic high molecular compound can be olefinic organic class, organic alkynes class, organic resin class, organic ethers, organic acid ester or polyaniline.
Particularly, in the above-mentioned preparation method that the embodiment of the present invention provides, step S103 forms amorphous silicon membrane on the buffer layer, specifically can strengthen chemical vapor deposition amorphous silicon membrane by using plasma, corresponding reacting gas can be the mist of methane (SiH4) and nitrogen (N2) or the mist of dichlorosilane (SiH2Cl2) and hydrogen (H2).In this no limit.
Particularly, in the above-mentioned preparation method that the embodiment of the present invention provides, THICKNESS CONTROL effect between 30nm-50nm of amorphous silicon membrane is good, in this no limit.
Preferably, in the above-mentioned preparation method that the embodiment of the present invention provides, after step S103 forms amorphous silicon membrane on the buffer layer, step S104, before carrying out laser crystallization process to amorphous silicon membrane, also comprises:
Carry out thermal anneal process to amorphous silicon membrane, to remove the hydrogen atom in amorphous silicon membrane, when preventing amorphous silicon membrane from carrying out crystallization in subsequent technique, hydrogen atom, because of spilling of being heated, damages crystallization effect.
Further, in the above-mentioned preparation method that example of the present invention provides, adopt Excimer-Laser Crystallization method (ELA) to carry out laser crystallization process to amorphous silicon membrane, make amorphous silicon membrane become polysilicon membrane.
Particularly, adopt Excimer-Laser Crystallization method (ELA) when carrying out laser crystallization process to amorphous silicon membrane, the wavelength control of laser at about 308nm, FREQUENCY CONTROL between 200Hz-400Hz, laser energy density control 230mJ/cm 2-250mJ/cm 2between, it is good that Duplication controls effect between 92%-98%.
Below for the flexible panel shown in Fig. 3, describe the above-mentioned preparation method that the embodiment of the present invention provides in detail.In the specific implementation, can comprise:
(1) on hard bearing substrate 1, flexible base, board 10 is formed, as shown in Figure 5 a;
Particularly, the material selection plastic material of flexible base, board, be specifically as follows PETG (Polyethylene Terephthalate, PET), PEN (PolyethyleneNaphthalate, PEN), Merlon (Polycarbonate, PC), one or more combinations in the material such as polyether sulfone (Polyether Sulfone, PES) and polyimides (Polyimide, PI).Further, in the specific implementation, the plastic solvent of solution shape is coated the surface of hard bearing substrate, then its baking-curing just can be formed flexible base, board, or utilize binding agent to be attached on hard bearing substrate by plastic film by the mode attached to form flexible base, board.
(2) on flexible base, board 10, heat-conducting layer 111 is formed, as shown in Figure 5 b;
Particularly, the material of heat-conducting layer is preferably Graphene or carbon nano-tube.When the material of heat-conducting layer is Graphene, Graphene can pass through the preparations such as oxidation-reduction method, carborundum (SiC) epitaxial growth method, vapour deposition process or organic synthesis method.When the material of heat-conducting layer is carbon nano-tube, carbon nano-tube can pass through the preparations such as graphite acr method, catalystic pyrolysis, laser evaporization method or chemical vapour deposition technique.
(3) on heat-conducting layer 111, insulating barrier 112 is formed, as shown in Figure 5 c;
Particularly, the material of insulating barrier can be the compound etc. of silica (SiOx), silicon nitride (SiNx) or silica and silicon nitride.In the specific implementation, insulating barrier can strengthen chemical vapour deposition technique (PECVD) preparation by using plasma, corresponding reacting gas can be the mist of methane (SiH4), ammonia (NH3) and nitrogen (N2) or the mist of dichlorosilane (SiH2Cl2), ammonia (NH3) and nitrogen (N2), in this no limit.
Further, the thickness of insulating barrier can control between 250nm-400nm.
(4) on insulating barrier 112, amorphous silicon membrane 13 is formed; As fig 5d;
Specifically can strengthen chemical vapor deposition amorphous silicon membrane by using plasma, corresponding reacting gas can be the mist of methane (SiH4) and nitrogen (N2) or the mist of dichlorosilane (SiH2Cl2) and hydrogen (H2).
Particularly, the THICKNESS CONTROL of amorphous silicon membrane is between 30nm-50nm.
(5) carry out thermal anneal process to amorphous silicon membrane 13, to remove the hydrogen atom in amorphous silicon membrane 13, when preventing amorphous silicon membrane 13 from carrying out crystallization in subsequent technique, hydrogen atom, because of spilling of being heated, damages crystallization effect.
(6) as depicted in fig. 5e, laser crystallization process is carried out to amorphous silicon membrane 13, make amorphous silicon membrane 13 become polysilicon membrane 12, as shown in figure 5f;
Particularly, in the specific implementation, adopt Excimer-Laser Crystallization method (ELA) laser crystallization process is carried out to amorphous silicon membrane, the wavelength control of laser at about 308nm, FREQUENCY CONTROL between 200Hz-400Hz, laser energy density control 230mJ/cm 2-250mJ/cm 2between, Duplication controls between 92%-98%.
Particularly, after above-mentioned steps (1) to (6), flexible panel as shown in Figure 3 can just be obtained.Above-mentioned preparation method is due to before formation amorphous silicon membrane, first form heat-conducting layer and insulating barrier on flexible substrates, therefore, follow-up laser crystallization process is carried out to amorphous silicon membrane time, even if laser energy can not be absorbed by amorphous silicon membrane completely, remaining laser energy also can be diffused away rapidly by heat-conducting layer, thus avoids the damage of remaining laser energy to flexible base, board, ensure that the performance of flexible panel.
Based on same inventive concept, the embodiment of the present invention additionally provides a kind of flexible display device, comprises the above-mentioned flexible panel that the embodiment of the present invention provides.Particularly, the embodiment of this flexible display device see the embodiment of above-mentioned flexible panel, can repeat part and repeats no more.
A kind of flexible panel that the embodiment of the present invention provides, its preparation method and flexible display device, because resilient coating has insulating properties and high-termal conductivity, therefore, this resilient coating not only can play the effect of insulation, and when by carrying out laser crystallization process formation polysilicon membrane to the amorphous silicon membrane on this resilient coating, even if laser energy can not be absorbed by amorphous silicon membrane completely, remaining laser energy also can be diffused away rapidly by the resilient coating with high-termal conductivity, thus avoid the damage of remaining laser energy to flexible base, board, ensure that the performance of flexible panel.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.

Claims (14)

1. a flexible panel, comprises flexible base, board and the resilient coating be positioned at successively on described flexible base, board and polysilicon membrane; Wherein, described polysilicon membrane is formed after laser crystallization process by the amorphous silicon membrane be formed on described resilient coating, it is characterized in that:
Described resilient coating has insulating properties and high-termal conductivity.
2. flexible panel as claimed in claim 1, is characterized in that, described resilient coating comprises and is positioned at heat-conducting layer on described flexible base, board and insulating barrier successively; Wherein,
The conductive coefficient of described heat-conducting layer is more than or equal to 1000 watts every meter and often opens.
3. flexible panel as claimed in claim 2, it is characterized in that, the material of described heat-conducting layer is Graphene or carbon nano-tube.
4. flexible panel as claimed in claim 2, it is characterized in that, the thickness of described insulating barrier is 250nm-400nm.
5. flexible panel as claimed in claim 1, it is characterized in that, the material of described resilient coating is the insulating polymeric material doped with high heat conducting nano particle; Wherein,
The conductive coefficient of described high heat conducting nano particle is more than or equal to 1000 watts every meter and often opens;
The resistivity of described insulating polymeric material is more than or equal to 10 9europe centimetre.
6. flexible panel as claimed in claim 5, it is characterized in that, the material of described high heat conducting nano particle is metal, metal oxide or metal nitride.
7. flexible panel as claimed in claim 5, it is characterized in that, described insulating polymeric material is inorganic macromolecule compound or organic high molecular compound.
8. flexible panel as claimed in claim 7, it is characterized in that, described inorganic macromolecule compound is the macromolecular compound of halide, sulfide, oxide or silane.
9. flexible panel as claimed in claim 7, it is characterized in that, described organic high molecular compound is olefinic organic class, organic alkynes class, organic resin class, organic ethers, organic acid ester or polyaniline.
10. a preparation method for flexible panel, is characterized in that, comprising:
Hard bearing substrate forms flexible base, board;
Described flexible base, board forms resilient coating, and wherein, described resilient coating has insulating properties and high-termal conductivity;
Described resilient coating forms amorphous silicon membrane;
Laser crystallization process is carried out to described amorphous silicon membrane, makes described amorphous silicon membrane become polysilicon membrane.
11. preparation methods as claimed in claim 10, is characterized in that, described flexible base, board forms resilient coating, specifically comprises:
Described flexible base, board forms heat-conducting layer, and the conductive coefficient of described heat-conducting layer is more than or equal to 1000 watts every meter and often opens;
Described heat-conducting layer forms insulating barrier.
12. preparation methods as claimed in claim 10, it is characterized in that, the material of described resilient coating is the insulating polymeric material doped with high heat conducting nano particle; Wherein,
The conductive coefficient of described high heat conducting nano particle is more than or equal to 1000 watts every meter and often opens;
The resistivity of described insulating polymeric material is more than or equal to 10 9europe centimetre.
13. preparation methods as described in any one of claim 10-12, is characterized in that, after described resilient coating forms amorphous silicon membrane, before carrying out laser crystallization process to described amorphous silicon membrane, also comprise:
Thermal anneal process is carried out to described amorphous silicon membrane.
14. 1 kinds of flexible display devices, is characterized in that, comprise flexible panel as described in any one of claim 1-9.
CN201410718651.4A 2014-12-01 2014-12-01 Flexible panel, method for manufacturing flexible panel and flexile display device Pending CN104465667A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410718651.4A CN104465667A (en) 2014-12-01 2014-12-01 Flexible panel, method for manufacturing flexible panel and flexile display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410718651.4A CN104465667A (en) 2014-12-01 2014-12-01 Flexible panel, method for manufacturing flexible panel and flexile display device

Publications (1)

Publication Number Publication Date
CN104465667A true CN104465667A (en) 2015-03-25

Family

ID=52911457

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410718651.4A Pending CN104465667A (en) 2014-12-01 2014-12-01 Flexible panel, method for manufacturing flexible panel and flexile display device

Country Status (1)

Country Link
CN (1) CN104465667A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104900611A (en) * 2015-06-09 2015-09-09 中国科学院微电子研究所 Flexible-substrate-based three-dimensional packaging heat-radiation structure and preparation method thereof
CN107195643A (en) * 2017-07-12 2017-09-22 武汉天马微电子有限公司 Flexible display panels and preparation method thereof, flexible display apparatus
CN107205310A (en) * 2017-06-29 2017-09-26 惠科股份有限公司 A kind of circuit board and display device
CN108447886A (en) * 2018-01-19 2018-08-24 昆山国显光电有限公司 Flexible display screen and preparation method thereof with the display of the flexible display screen
CN109285462A (en) * 2018-12-12 2019-01-29 武汉天马微电子有限公司 Flexible display panels and preparation method thereof, flexible display apparatus
WO2019047383A1 (en) * 2017-09-05 2019-03-14 武汉华星光电半导体显示技术有限公司 Flexible display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1685521A (en) * 2002-09-24 2005-10-19 康宁股份有限公司 A silicon thin film transistor, a method of manufacture, & a display screen
US20060043367A1 (en) * 2004-09-01 2006-03-02 Mao-Yi Chang Semiconductor device and method of fabricating a low temperature poly-silicon layer
CN103172973A (en) * 2013-03-26 2013-06-26 上海交通大学 High thermal-conductivity polymer composite material and preparation method thereof
CN103606535A (en) * 2013-11-26 2014-02-26 深圳市华星光电技术有限公司 Flexible display module manufacturing method and flexible display module through method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1685521A (en) * 2002-09-24 2005-10-19 康宁股份有限公司 A silicon thin film transistor, a method of manufacture, & a display screen
US20060043367A1 (en) * 2004-09-01 2006-03-02 Mao-Yi Chang Semiconductor device and method of fabricating a low temperature poly-silicon layer
CN103172973A (en) * 2013-03-26 2013-06-26 上海交通大学 High thermal-conductivity polymer composite material and preparation method thereof
CN103606535A (en) * 2013-11-26 2014-02-26 深圳市华星光电技术有限公司 Flexible display module manufacturing method and flexible display module through method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104900611A (en) * 2015-06-09 2015-09-09 中国科学院微电子研究所 Flexible-substrate-based three-dimensional packaging heat-radiation structure and preparation method thereof
CN104900611B (en) * 2015-06-09 2017-09-08 中国科学院微电子研究所 Three-dimension packaging radiator structure based on flexible base board and preparation method thereof
CN107205310A (en) * 2017-06-29 2017-09-26 惠科股份有限公司 A kind of circuit board and display device
CN107205310B (en) * 2017-06-29 2019-12-24 惠科股份有限公司 Circuit board and display device
CN107195643A (en) * 2017-07-12 2017-09-22 武汉天马微电子有限公司 Flexible display panels and preparation method thereof, flexible display apparatus
WO2019047383A1 (en) * 2017-09-05 2019-03-14 武汉华星光电半导体显示技术有限公司 Flexible display device
CN108447886A (en) * 2018-01-19 2018-08-24 昆山国显光电有限公司 Flexible display screen and preparation method thereof with the display of the flexible display screen
CN108447886B (en) * 2018-01-19 2020-08-25 广州国显科技有限公司 Flexible display screen, manufacturing method thereof and display with flexible display screen
CN109285462A (en) * 2018-12-12 2019-01-29 武汉天马微电子有限公司 Flexible display panels and preparation method thereof, flexible display apparatus

Similar Documents

Publication Publication Date Title
CN104465667A (en) Flexible panel, method for manufacturing flexible panel and flexile display device
JP5700637B2 (en) Transistor
CN102117837B (en) Thin film transistor
JP5785770B2 (en) Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
CN103985637A (en) Low-temperature polycrystalline silicon thin film transistor, manufacturing method thereof and display device
JP2012033902A (en) Manufacturing method of microcrystalline semiconductor film and manufacturing method of semiconductor device
US9634146B2 (en) Method for manufacturing assembly of flexible display device and assembly of flexible display device manufactured with same
JP5774410B2 (en) Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
JP5823821B2 (en) Method for manufacturing microcrystalline semiconductor film and method for manufacturing semiconductor device
KR20110039454A (en) Hybrid dielectric material for thin film transistors
JP2012049517A (en) Manufacturing method of microcrystalline semiconductor film, and manufacturing method of semiconductor device
US10374062B2 (en) Array substrate, manufacturing method thereof and display panel
US8748896B2 (en) Thin film transistor
Lee et al. Poly‐Si Thin‐Film Transistors on Polyimide Substrate for 1 mm Diameter Rollable Active‐Matrix Organic Light‐Emitting Diode Display
CN107910263A (en) The manufacture method of low-temperature polysilicon film and transistor
CN107919268A (en) The manufacture method of low-temperature polysilicon film and transistor
CN107946173A (en) The manufacture method of low-temperature polysilicon film and transistor
CN103098187A (en) Silicon oxynitride film and method for forming same, and semiconductor device
CN103928341A (en) Polycrystalline silicon manufacturing method capable of improving crystalline grain size
Han et al. Recent review on improving mechanical durability for flexible oxide thin film transistors
CN101789450B (en) Thin film transistor and method for manufacturing silicon-rich channel layer
US10756280B2 (en) Manufacturing method of organic thin film transistor
JP5752447B2 (en) Semiconductor device
JP6339632B2 (en) Method for manufacturing thin film transistor
JP6153296B2 (en) Semiconductor device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20150325