CN104465452B - A kind of pretreatment control method of reaction chamber - Google Patents
A kind of pretreatment control method of reaction chamber Download PDFInfo
- Publication number
- CN104465452B CN104465452B CN201310441608.3A CN201310441608A CN104465452B CN 104465452 B CN104465452 B CN 104465452B CN 201310441608 A CN201310441608 A CN 201310441608A CN 104465452 B CN104465452 B CN 104465452B
- Authority
- CN
- China
- Prior art keywords
- reaction chamber
- pretreatment
- conditions
- machined
- workpiece
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Feedback Control In General (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of pretreatment control method of reaction chamber, and it comprises the following steps：S1, it is pre-configured with and stores pretreatment condition table, pretreatment condition table internal memory contains pretreatment condition and therewith one-to-one preconditioning recipe；S2, the conditions present parameter of reaction chamber is obtained, and the preconditioning recipe corresponding with the pretreatment condition that conditions present parameter is met is inquired about in pretreatment condition table；S3, reaction chamber is pre-processed using preconditioning recipe.Pretreatment control method provided by the invention, it can not only improve the operating efficiency of pretreatment, so as to increase economic efficiency；And the requirement to the professional knowledge of operating personnel can be reduced, and reduce using maloperation caused by manual control mode, so as to reduce Technical investment cost and improve processing quality.
Description
Technical field
The invention belongs to semiconductor processing technology field, and in particular to a kind of pretreatment control method of reaction chamber.
Background technology
Physical vapour deposition (PVD)（Physical Vapor Deposition, hereinafter referred to as PVD）Equipment, which is widely used in, to be added
Film is prepared on the surface of work workpiece.PVD equipment includes reaction chamber, and the process environments in reaction chamber are to influence technique
An important factor for quality.
Therefore, generally need to pre-process reaction chamber before technique is carried out.Also, in actual applications, root
Also it is not quite similar according to the different pretreatments of actual conditions, for example, pretreatment includes following three kinds of pretreatments：（a）When in reaction chamber
After a kind of indoor technique of completion, and, it is necessary to a kind of pretreatment carried out to reaction chamber before a kind of lower technique is carried out；
（b）After reaction chamber leaves unused a period of time, and before progress technique, it is necessary to pre- place of the one kind carried out to reaction chamber in it
Reason；（c）, it is necessary to the pre- place of the one kind carried out to reaction chamber after completing workpiece to be machined in reaction chamber and presetting piece number
Reason.A kind of pretreatment control method of reaction chamber is currently, there are, specifically, artificially judges whether to need to enter reaction chamber
Row pretreating process, if so, then carrying out pretreating process to reaction chamber using manual mode, adopted after the completion of pretreating process
Workpiece to be machined is delivered in reaction chamber with automatic mode, and technical process is completed in reaction chamber.
However, above-mentioned preprocess method is inevitably present problems with actual applications, i.e.,：Due to control manually
The operating efficiency of mode is low can not to meet the needs of factory automation operation, so as to cause economic benefit low；It is additionally, since manually
Control mode needs operating personnel to have certain professional knowledge, and manual control mode often produces maloperation, so as to lead
Cause Technical investment cost high poor with processing quality.
The content of the invention
A kind of present invention seek to address that technical problem present in prior art, there is provided the pretreatment control of reaction chamber
Method, it can not only improve the operating efficiency of pretreatment, so as to increase economic efficiency；And it can reduce to operator
The requirement of the professional knowledge of member, and is reduced using maloperation caused by manual control mode, so as to reduce Technical investment into
Sheet and raising processing quality.
To realize that the purpose of the present invention provides a kind of pretreatment control method of reaction chamber, methods described includes following
Step：S1, be pre-configured with and store pretreatment condition table, the pretreatment condition table internal memory contain pretreatment condition and with one of
Pretreatment side corresponding to one, S2 obtains the conditions present parameter of the reaction chamber, and is inquired about in the pretreatment condition table
The preconditioning recipe corresponding with the pretreatment condition that the conditions present parameter is met；S3, using the pretreatment
Formula pre-processes to the reaction chamber.
Wherein, the pretreatment condition includes process recipe conditions, standby time condition and/or performing chip said conditions；Its
Described in process recipe conditions refer to meet current process and target process point that the reaction chamber is carried out to workpiece to be machined
The current process parameter and the condition of target process parameter not used；The standby time condition refers to the reaction chamber to quilt
Whether the reaction chamber idle time is in default time range after workpieces processing completion current process；The performing chip several
Whether part refers to the quantity for the workpiece to be machined that the reaction chamber machines before target process is carried out in default number
In the range of amount.
Wherein, the pretreatment condition includes process recipe conditions, standby time condition and performing chip said conditions, described pre-
Treatment conditions table internal memory contains one-to-one process recipe conditions, standby time condition and performing chip said conditions, and described
Step S2 is further comprising the steps of：S21, obtain current process and target process that the reaction chamber is carried out to workpiece to be machined
The current process parameter and target process parameter being respectively adopted, and the current process ginseng is inquired about in the pretreatment condition table
Number standby time the conditions corresponding with process recipe conditions that target process parameter is met, performing chip said conditions and in advance
Treatment formulations；S22, the time that the reaction chamber completes the reaction chamber free time after current process to workpiece to be machined is obtained,
And judge whether the time meets the standby time condition；The reaction chamber is obtained to process before target process is carried out
Into workpiece to be machined quantity, and judge whether the quantity meets the performing chip said conditions；If the time and the quantity point
Do not meet the standby time condition and performing chip said conditions, then into step S3；If in the time and the quantity wherein extremely
Few one is unsatisfactory for the standby time condition or performing chip said conditions, it is determined that the reaction chamber is not pre-processed.
Wherein, it is further comprising the steps of in step S22：S221, the reaction chamber is obtained first to workpiece to be machined
The reaction chamber idle time after completion current process, and judge whether the time meets the standby time condition, if so,
Then enter step S222, if not, it is determined that the reaction chamber is not pre-processed；S222, then obtain the reaction chamber
The quantity of the workpiece to be machined machined before target process is carried out, and judge whether the quantity meets the performing chip number
Condition, if so, then entering step S3, if not, it is determined that do not pre-processed to the reaction chamber.
Wherein, it is further comprising the steps of in step S22：S221, the reaction chamber is obtained first and is carrying out target work
The quantity of the workpiece to be machined machined before skill, and judge whether the quantity meets the performing chip said conditions, if so, then
Into step S222, if not, it is determined that the reaction chamber is not pre-processed；S222, then obtain the reaction chamber pair
Workpiece to be machined completes the time of reaction chamber free time after current process, and judges whether the time meets the standby time
Condition, if so, then entering step S3, if not, it is determined that do not pre-processed to the reaction chamber.
Wherein, step S0 is also included before step S1 or after step S1 and before step S2, judgement is intended to pair
Whether the chamber that workpiece to be machined is processed is the reaction chamber, if so, then entering step S1 or S2.
Wherein, in step s3, the preconditioning recipe includes pretreatment time, is designed and passed according to the pretreatment time
The transmission path of the defeated workpiece to be machined, to complete pretreatment and then by the processed work to the reaction chamber
Part is delivered in the reaction chamber.
Wherein, after the step S3, the conditions present parameter of the reaction chamber is reset.
Wherein, the quantity of the workpiece to be machined reaction chamber machined before target process is carried out and described
Reaction chamber is completed the idle time of reaction chamber after current process to workpiece to be machined and reset, and by the reaction chamber pair
The current process parameter that the target process parameter that the target process that workpiece to be machined is carried out uses uses as current process.
The present invention has following beneficial effects：
The pretreatment control method of reaction chamber provided by the invention, it is by being previously stored with pretreatment condition and therewith
The pretreatment condition table of one-to-one preconditioning recipe, and the conditions present parameter of reaction chamber is obtained, and in pretreatment bar
The inquiry preconditioning recipe corresponding with the pretreatment condition that conditions present parameter is met in part table, then using preconditioning recipe
Reaction chamber is pre-processed, this is pre-processed by the way of automatically controlling to reaction chamber compared with prior art,
The operating efficiency of pretreatment thus can be not only improved, so as to increase economic efficiency；And it can reduce to operating personnel
Professional knowledge requirement, and reduce using maloperation caused by manual control mode, so as to reduce Technical investment cost
With raising processing quality.
Brief description of the drawings
Fig. 1 is the flow chart of the pretreatment control method of the first reaction chamber provided by the invention；
Fig. 2 is the picture of the setting pretreatment condition table of the pretreatment control method of reaction chamber provided by the invention；
Fig. 3 is the flow chart of the pretreatment control method of second of reaction chamber provided by the invention；And
Fig. 4 is the flow chart of the pretreatment control method of the third reaction chamber provided by the invention.
Embodiment
To make those skilled in the art more fully understand technical scheme, the present invention is carried below in conjunction with the accompanying drawings
A kind of pretreatment control method of the reaction chamber supplied is described in detail.
Fig. 1 is the flow chart of the pretreatment control method of the first reaction chamber provided by the invention.Referring to Fig. 1, bag
Include following steps：
S1, be pre-configured with and store pretreatment condition table, pretreatment condition table internal memory contain pretreatment condition and with one of
Preconditioning recipe corresponding to one；
S2, obtain the conditions present parameter of reaction chamber, and inquiry and conditions present parameter institute in pretreatment condition table
The corresponding preconditioning recipe of the pretreatment condition that meets；
S3, reaction chamber is pre-processed using preconditioning recipe.
Wherein, pretreatment condition includes process recipe conditions, standby time condition and/or performing chip said conditions.Wherein, work
Skill formulation condition refers to meet the current process that reaction chamber is carried out to workpiece to be machined and what target process was respectively adopted works as
The condition of preceding technological parameter and target process parameter；Standby time condition refers to that reaction chamber completes current work to workpiece to be machined
Whether the reaction chamber idle time is in default time range after skill；Performing chip said conditions refer to that reaction chamber is carrying out mesh
Whether the quantity of the workpiece to be machined machined before mark technique is in default quantitative range.It is readily appreciated that, current process
The last technique completed in reaction chamber to workpiece to be machined before referring to target process；Target process refer to this
The technique completed in reaction chamber to workpiece to be machined.
In the present embodiment, pretreatment condition includes process recipe conditions, standby time condition and performing chip said conditions, in advance
Treatment conditions table internal memory contains one-to-one process recipe conditions, standby time condition and performing chip said conditions, also, step
S2 is further comprising the steps of：
S21, the current work that the current process and target process that acquisition reaction chamber is carried out to workpiece to be machined are respectively adopted
Skill parameter and target process parameter, and inquire about what current process parameter and target process parameter were met in pretreatment condition table
The corresponding standby time condition of process recipe conditions, performing chip said conditions and preconditioning recipe；
S22, obtain reaction chamber and the time of reaction chamber free time after current process is completed to workpiece to be machined, and judge
Whether the time meets standby time condition；Obtain the workpiece to be machined that reaction chamber machines before target process is carried out
Quantity, and judge whether the quantity meets performing chip said conditions；If the time and the quantity meet standby time condition respectively
With performing chip said conditions, then into step S3；If the wherein at least one in the time and the quantity is unsatisfactory for standby time bar
Part or performing chip said conditions, it is determined that do not pre-processed to reaction chamber.
The pretreatment control method of the reaction chamber of the present embodiment offer is provided with reference to Fig. 2：Specifically, anti-
Depositing Ti can be carried out to workpiece to be machined by answering in chamber（Titanium）Film and TiN（Titanium nitride）Film, i.e. can in reaction chamber
To complete Ti techniques and TiN techniques to workpiece to be machined, and the current process of reaction chamber is Ti techniques, and target process is
TiN techniques；In fig. 2, chamber original state refers to the current process of reaction chamber, and chamber dbjective state refers to the mesh of reaction chamber
Mark technique, refer to preconditioning recipe using formula, comprise the following steps：
S10, it is pre-configured with and stores pretreatment condition table, pretreatment condition table internal memory contains one-to-one technical recipe
Condition, standby time condition, performing chip said conditions and preconditioning recipe, as shown in Fig. 2 containing one in pretreatment condition table internal memory
Process recipe conditions corresponding to one are that current process is TiN techniques, and target process is Ti techniques, and performing chip said conditions are reaction chamber
The quantity N for the workpiece to be machined that room machines before target process is carried out>50 are formula 2 and formula with preconditioning recipe
3；And it is that current process is Ti techniques to be also stored with one-to-one process recipe conditions, target process is TiN techniques, when leaving unused
Between condition be that reaction chamber completes the idle time T of reaction chamber after current process to workpiece to be machined<30 minutes and pre- place
Reason formula is formula 1；
S20, obtain the current process that reaction chamber is carried out to workpiece to be machined（Ti techniques）And target process（TiN techniques）
The current process parameter and target process parameter being respectively adopted, and current process parameter and target are inquired about in pretreatment condition table
The corresponding standby time condition of process recipe conditions that technological parameter is met（T<30）And preconditioning recipe（Formula 1）；
S30, obtain reaction chamber and the time of reaction chamber free time after current process is completed to workpiece to be machined, and judge
Whether the time meets standby time condition（T<30）, if so, then entering step S40, if it is not, then entering step S50；
S40, using preconditioning recipe（Formula 1）Reaction chamber is pre-processed；
S50, it is determined that not pre-processed to reaction chamber.
It is readily appreciated that, in fig. 2, the title that TiN techniques and Ti techniques are associated respectively as the technological parameter needed for it,
Technological parameter needed for TiN techniques and Ti techniques can be in technique picture（Not shown in figure）In enter edlin setting；Similarly, match somebody with somebody
Side 1, formula 2 and formula 3 are respectively as the associated title of the technological parameter needed for corresponding pretreatment, each formula pair
The technological parameter needed for pretreatment answered can be in advance in formula picture（Not shown in figure）Enter edlin setting, this to grasp
The required technological parameter of pretreatment need not specifically be set when being pre-processed to reaction chamber by making personnel, and this can not only drop
The requirement of the low professional knowledge to operating personnel, and reduce using maloperation caused by manual control mode, so as to reduce
Technical investment cost and raising processing quality；And preconditioning recipe can be maintained secrecy, so as to the guarantor to develop skill
Close property.
In actual applications, can be carried out according to actual conditions it is specific set pretreatment condition include process recipe conditions,
One or more in standby time condition and/or performing chip said conditions, for example, pretreatment condition only includes technical recipe bar
Part, pretreatment is carried out when being differed due to the current process and target process of reaction chamber to reaction chamber and is just of practical significance,
Therefore, in this case, two kinds of different techniques can be at least completed in reaction chamber（For example, TiN techniques and Ti works
Skill）, and it is that current process is TiN techniques to be configured in pretreatment condition table and be stored with one-to-one process recipe conditions,
Target process is Ti techniques and preconditioning recipe；It is current that can also configure and be stored with one-to-one process recipe conditions
Technique is Ti techniques, and target process is TiN techniques and preconditioning recipe；And for example, pretreatment condition only includes standby time bar
Part, in this case, it is T that in the configuration of pretreatment condition table, simultaneously internal memory, which contains one-to-one standby time condition,>30 minutes
And preconditioning recipe, it is T that can also configure and be stored with one-to-one standby time condition<30 minutes and pretreatment match somebody with somebody
Side.Certainly, in actual applications, other pretreatments can also be set according to the difference of reaction chamber or other actual conditions
Condition.
Also, in the present embodiment, also include step before step S1 or after step S1 and before step S2
Rapid S0, whether the chamber for judging to be intended to be processed workpiece to be machined is reaction chamber, if so, then entering step S1 or S2.
In addition, in step s3, preconditioning recipe includes pretreatment time, it is processed according to pretreatment time design transmission
The transmission path of workpiece, to complete pretreatment to reaction chamber and then workpiece to be machined is delivered in reaction chamber.
Also, the conditions present parameter of reaction chamber after step s 3, is reset, specifically, reaction chamber is being carried out
The quantity and reaction chamber of the workpiece to be machined machined before target process are to anti-after workpiece to be machined completion current process
The chamber idle time is answered to reset, and the target process that the target process that reaction chamber is carried out to workpiece to be machined uses is joined
The current process parameter that number uses as current process.It is readily appreciated that, when pretreatment condition is specifically set according to actual conditions
Regularly, accordingly a pair conditions present parameter related to pretreatment condition is reset.
It should be noted that in the step S22 of the present embodiment, while judge whether the time and the quantity meet respectively
Standby time condition and performing chip said conditions, still, the invention is not limited in this, in actual applications, as shown in figure 3, being
The flow chart of the pretreatment control method of second of reaction chamber provided by the invention, it is further comprising the steps of in step S22：
When S221, obtaining reaction chamber first and the time of reaction chamber free time after current process completed to workpiece to be machined, and judging this
Between whether meet standby time condition, if so, then entering step S222, if not, it is determined that reaction chamber is not pre-processed；
S222, then the quantity for the workpiece to be machined that reaction chamber machines before target process is carried out is obtained, and judge the quantity
Whether performing chip said conditions are met, if so, then entering step S3, if not, it is determined that reaction chamber is not pre-processed；
Or as shown in figure 4, the flow chart of the pretreatment control method for the third reaction chamber provided by the invention,
It is further comprising the steps of in step S22：S221, the quilt that reaction chamber machines before target process is carried out is obtained first
The quantity of workpieces processing, and judge whether the quantity meets performing chip said conditions, if so, then entering step S222, if it is not, then true
It is fixed reaction chamber not to be pre-processed；S222, then obtain reaction chamber workpiece to be machined is carried out it is anti-after completion current process
The chamber idle time is answered, and judges whether the time meets standby time condition, if so, then entering step S3, if it is not, then true
It is fixed reaction chamber not to be pre-processed.
It should also be noted that, in the present embodiment, when pretreatment condition includes process recipe conditions, standby time condition
During with performing chip said conditions, in step s 2, the conditions present of the reaction chamber corresponding with process recipe conditions is obtained first
Parameter, then inquire about in pretreatment condition table corresponding idle of process recipe conditions that the conditions present parameter of acquisition is met
Time conditions, performing chip said conditions and preconditioning recipe, still, the invention is not limited in this, in actual applications, in step
Any one conditions present parameter corresponding with pretreatment condition can be obtained in S2 first, and according to the conditions present parameter
Inquired about in pretreatment condition table and correspond to other pretreatment conditions and preconditioning recipe therewith.
It is further to note that the pretreatment control method of the reaction chamber provided using the present embodiment is completed to reaction
Chamber is pre-processed or determined after not pre-processed to reaction chamber, and workpiece to be machined is delivered into reaction chamber
It is interior, in reaction chamber according to target process parameter to workpiece to be machined complete target process, also, complete target process it
Afterwards, the quantity of workpiece to be machined reaction chamber machined before target process is carried out adds 1.
In summary, the pretreatment control method for the reaction chamber that the present embodiment provides, it is by being previously stored with pre- place
The pretreatment condition table of manage bar part and therewith one-to-one preconditioning recipe, and the conditions present parameter of reaction chamber is obtained,
And the preconditioning recipe corresponding with the pretreatment condition that conditions present parameter is met is inquired about in pretreatment condition table, then adopt
Reaction chamber is pre-processed with preconditioning recipe, this compared with prior art, to reaction chamber by the way of automatically controlling
Room is pre-processed, thus can not only improve the operating efficiency of pretreatment, so as to increase economic efficiency；And it can drop
The requirement of the low professional knowledge to operating personnel, and reduce using maloperation caused by manual control mode, so as to reduce
Technical investment cost and raising processing quality.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the original of the present invention is not being departed from
In the case of reason and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of pretreatment control method of reaction chamber, it is characterised in that comprise the following steps：
S1, be pre-configured with and store pretreatment condition table, the pretreatment condition table internal memory contain pretreatment condition and with one of
Preconditioning recipe corresponding to one；
S2, the conditions present parameter of the reaction chamber is obtained, and inquiry works as preceding article with described in the pretreatment condition table
The corresponding preconditioning recipe of the pretreatment condition that part parameter is met；
S3, the reaction chamber is pre-processed using the preconditioning recipe.
2. the pretreatment control method of reaction chamber according to claim 1, it is characterised in that the pretreatment condition bag
Include process recipe conditions, standby time condition and/or performing chip said conditions；Wherein
The process recipe conditions refer to the current process and target process for meeting that the reaction chamber is carried out to workpiece to be machined
The current process parameter and the condition of target process parameter being respectively adopted；
The standby time condition refers to the reaction chamber to the reaction chamber free time after workpiece to be machined completion current process
Whether the time is in default time range；
The performing chip said conditions refer to the workpiece to be machined that the reaction chamber machines before target process is carried out
Whether quantity is in default quantitative range.
3. the pretreatment control method of reaction chamber according to claim 2, it is characterised in that the pretreatment condition bag
Process recipe conditions, standby time condition and performing chip said conditions are included, the pretreatment condition table internal memory contains correspondingly
Process recipe conditions, standby time condition and performing chip said conditions, and the step S2 is further comprising the steps of：
S21, obtain the current process that the reaction chamber carries out to workpiece to be machined and the current work that target process is respectively adopted
Skill parameter and target process parameter, and the current process parameter and target process parameter are inquired about in the pretreatment condition table
The process recipe conditions that are met corresponding standby time condition, performing chip said conditions and preconditioning recipe；
S22, obtain the reaction chamber and the time of reaction chamber free time after current process is completed to workpiece to be machined, and judge
Whether the time meets the standby time condition；Obtain the quilt that the reaction chamber machines before target process is carried out
The quantity of workpieces processing, and judge whether the quantity meets the performing chip said conditions；If the time and the quantity meet respectively
The standby time condition and performing chip said conditions, then into step S3；If the wherein at least one in the time and the quantity
It is unsatisfactory for the standby time condition or performing chip said conditions, it is determined that the reaction chamber is not pre-processed.
4. the pretreatment control method of reaction chamber according to claim 3, it is characterised in that also wrapped in step S22
Include following steps：
S221, the time that the reaction chamber completes the reaction chamber free time after current process to workpiece to be machined is obtained first,
And judge whether the time meets the standby time condition, if so, then entering step S222, if not, it is determined that not to described
Reaction chamber is pre-processed；
S222, then the quantity for the workpiece to be machined that the reaction chamber machines before target process is carried out is obtained, and sentence
Whether the quantity of breaking meets the performing chip said conditions, if so, then entering step S3, if not, it is determined that not to the reaction chamber
Room is pre-processed.
5. the pretreatment control method of reaction chamber according to claim 3, it is characterised in that also wrapped in step S22
Include following steps：
S221, the quantity for the workpiece to be machined that the reaction chamber machines before target process is carried out is obtained first, and
Judge whether the quantity meets the performing chip said conditions, if so, then entering step S222, if not, it is determined that not to described anti-
Chamber is answered to be pre-processed；
S222, then the time that the reaction chamber completes the reaction chamber free time after current process to workpiece to be machined is obtained, and
Judge whether the time meets the standby time condition, if so, then entering step S3, if not, it is determined that not to the reaction
Chamber is pre-processed.
6. the pretreatment control method of reaction chamber according to claim 1, it is characterised in that before step S1 or
Also include step S0 after step S1 and before step S2, the chamber for judging to be intended to be processed workpiece to be machined whether be
The reaction chamber, if so, then entering step S1 or S2.
7. the pretreatment control method of reaction chamber according to claim 1, it is characterised in that in step s3, described
Preconditioning recipe includes pretreatment time,
The transmission path of transmission workpiece to be machined is designed according to the pretreatment time, to complete pre- place to the reaction chamber
Manage and then the workpiece to be machined is delivered in the reaction chamber.
8. the pretreatment control method of reaction chamber according to claim 1, it is characterised in that the step S3 it
Afterwards, the conditions present parameter of the reaction chamber is reset.
9. the pretreatment control method of reaction chamber according to claim 8, it is characterised in that the reaction chamber exists
The quantity of the workpiece to be machined machined before target process and the reaction chamber are completed current to workpiece to be machined
The reaction chamber idle time resets after technique, and the target process that the reaction chamber is carried out to workpiece to be machined uses
The current process parameter that is used as current process of target process parameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310441608.3A CN104465452B (en) | 2013-09-25 | 2013-09-25 | A kind of pretreatment control method of reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310441608.3A CN104465452B (en) | 2013-09-25 | 2013-09-25 | A kind of pretreatment control method of reaction chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104465452A CN104465452A (en) | 2015-03-25 |
| CN104465452B true CN104465452B (en) | 2018-01-19 |
Family
ID=52911302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310441608.3A Active CN104465452B (en) | 2013-09-25 | 2013-09-25 | A kind of pretreatment control method of reaction chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104465452B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107275248B (en) * | 2016-04-07 | 2019-08-27 | 中芯国际集成电路制造(上海)有限公司 | Board control method and machine control system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6496747B1 (en) * | 1998-10-13 | 2002-12-17 | Canon Kabushiki Kaisha | Semiconductor device manufacturing apparatus and information processing system therefor |
| CN101469418A (en) * | 2007-12-29 | 2009-07-01 | 沈阳中科博微自动化技术有限公司 | Control method for plasma reinforced chemical meteorology deposition apparatus |
| CN103215572A (en) * | 2012-01-19 | 2013-07-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor equipment technology control method and semiconductor equipment technology control device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3316806B2 (en) * | 1992-09-16 | 2002-08-19 | 宮崎沖電気株式会社 | Semiconductor manufacturing management system |
-
2013
- 2013-09-25 CN CN201310441608.3A patent/CN104465452B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6496747B1 (en) * | 1998-10-13 | 2002-12-17 | Canon Kabushiki Kaisha | Semiconductor device manufacturing apparatus and information processing system therefor |
| CN101469418A (en) * | 2007-12-29 | 2009-07-01 | 沈阳中科博微自动化技术有限公司 | Control method for plasma reinforced chemical meteorology deposition apparatus |
| CN103215572A (en) * | 2012-01-19 | 2013-07-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Semiconductor equipment technology control method and semiconductor equipment technology control device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104465452A (en) | 2015-03-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7896649B2 (en) | Heat system, heat method, and program | |
| US20150268659A1 (en) | Robot controller having function of predicting processing completion time of machine tool | |
| TW200617201A (en) | Formula-based run-to-run control | |
| WO2009151838A3 (en) | Automatic recipe management for laser processing workpiece | |
| TW200615814A (en) | Process control using physical modules and virtual modules | |
| WO2006055984A3 (en) | Substrate processing apparatus using a batch processing chamber | |
| CN110825056B (en) | Hybrid flow shop scheduling method with variable parameter continuous processing and intermittent processing | |
| CN101118642B (en) | Electronic photo frame | |
| US7340320B2 (en) | Method of recipe control operation | |
| TW200728948A (en) | Manufacturing process control methods and systems | |
| CN104465452B (en) | A kind of pretreatment control method of reaction chamber | |
| CN103215572A (en) | Semiconductor equipment technology control method and semiconductor equipment technology control device | |
| CA2432354A1 (en) | Automatic cook sequencing system for multiple ovens | |
| CN101110886A (en) | Method and apparatus for processing, saving and displaying digital photograph | |
| CN105867194A (en) | Equipment control method and device | |
| CN117025896A (en) | Heat treatment system | |
| TW200746243A (en) | Apparatus for controlling substrate processing apparatus and program for controlling substrate processing apparatus | |
| CN106057623A (en) | Systems and methods for reducing copper contamination due to substrate processing chambers with components made of alloys including copper | |
| CN103811292A (en) | Silicon chip processing system and processing method thereof | |
| CN104267771A (en) | Method for controlling temperature and humidity in cabinet | |
| US6449530B1 (en) | Semiconductor wafer carrier, semiconductor wafer carrier automatic transfer system and method for producing a semiconductor device | |
| CN107275248A (en) | Board control method and machine control system | |
| CN110643964B (en) | Control method, control device and system of direct-current power supply in magnetron sputtering process | |
| CA2532995A1 (en) | System and method for determining a designated connection between components of computing devices | |
| CN111008487A (en) | Method for calculating oil quantity in cooking utensil in cooking process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Applicant before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |