CN104464956A - High-precision and interval-controllable electrode and preparing method thereof - Google Patents
High-precision and interval-controllable electrode and preparing method thereof Download PDFInfo
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- CN104464956A CN104464956A CN201410725859.9A CN201410725859A CN104464956A CN 104464956 A CN104464956 A CN 104464956A CN 201410725859 A CN201410725859 A CN 201410725859A CN 104464956 A CN104464956 A CN 104464956A
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Abstract
The invention provides a high-precision and interval-controllable electrode and a preparing method of high-precision and interval-controllable electrodes. The method comprises the steps that firstly, a substrate is designed and prepared, wherein high surface energy regions and lower surface energy regions are alternately arranged on the substrate; the high surface energy regions are fully paved with a solution or emulsion including conductive fillers; then, evaporation diffusion is conducted, along with the volatilization of the solvent, the freely-diffused conductive fillers are gathered and arranged on the boundary regions, adjacent to the low surface energy regions, of the high surface energy regions, the lower surface energy regions serve as dams and are used for controlling the further diffusion of liquid drops, the diffused and arranged conductive fillers are solidified through heating or photon sintering and then form interval-controllable high-precision electrodes, and the intervals of the electrodes are controlled by the width of the high surface energy regions. The high-precision and interval-controllable electrode prepared through the method has important application on the aspect of preparing high-precision electrodes of devices such as transparent conductive films, high-end sensors, transistors, storage devices and capacitors.
Description
Technical field
The invention belongs to the preparing technical field of telegraph circuit, particularly a kind of high accuracy, spacing-controllable electricity
Pole and preparation method thereof.
Background technology
The fast preparation method of current high-precision electrode mainly comprises tradition based on the tinsel exposure etching technique of photoresists coating and the printed circuit technique based on e-inks.Tradition exposure etched electrodes process for making is complicated, and energy consumption is high, cost intensive, and creates a large amount of heavy metals and waste water in production process, causes serious pollution to the living environment of the mankind.Based on the printed circuit technique of e-inks, be limited by the restriction of printing precision, the circuit line width precision that its printing manufactures is greater than 20 microns, also cannot realize at present manufacturing less than 20 microns high-precision circuits based on tradition four large typography printings.The various high-precision circuit of current preparation is expensive, the cycle is long, and therefore, exploitation is a kind of fast, environmental protection, low-cost and high-precision electrode preparation method has great importance and market potential is worth, and is conducive to structure and the test of carrying out device fast.
Along with the development of printed electronic, wearable electronic technology and biological electronic technology, electronic device presents the integrated development trend of diversification, proposes new requirement to the high density of electronic devices and components, microminiaturization.Particularly in organism and the various electronic sensor of subcutaneous implantation, high-precision electrode has great importance for the size reducing transducer; Simultaneously high-precision electrode also to realizing high-performance, highdensity printing organic transistor is significant, transistor electrodes precision and electrode spacing remarkable to printed transistor performance impact.
Summary of the invention
The object of this invention is to provide a kind of method preparing spacing-controllable, high-precision electrode.First the method designs preparation surface by high surface energy district and low-surface-energy district base material alternately, solution containing conductive filler or emulsion are paved with the high surface energy district of base material, then evaporation and diffusion is carried out, along with the volatilization of solvent, the conductive filler enrichment of free diffusing is arranged in the borderline region that low-surface-energy district is closed in high surface energy district, low-surface-energy district controls the further diffusion of drop as dykes and dams, the conductive filler of diffusion arrangement is after heating or photon sintering curing, form the high-precision electrode of spacing-controllable, its spacing is controlled by high surface energy sector width.
The preparation method of a kind of high accuracy of the present invention, spacing-controllable electrode is:
(1) based on the demand of device electrode, design preparation surface is by high surface energy district and low-surface-energy district base material alternately;
(2) preparation contains solution or the emulsion of conductive filler;
(3) solution containing conductive filler or emulsion are paved with high surface energy district;
(4) made by base material heating the solution containing conductive filler or emulsion be diffused into both sides, high surface energy district and evaporation of solvent, final conductive filler enrichment is arranged in the borderline region that low-surface-energy district is closed in high surface energy district;
(5) conductive filler of diffusion enrichment is heating and curing or photon sintering curing, and then forms high accuracy, spacing-controllable electrode.
Described low-surface-energy district contact angle is greater than 120 °; High surface energy district contact angle is less than 90 °.
Described low-surface-energy district is the super-hydrophobic coat of thickness 1nm-0.1cm; High surface energy district is the intrinsic surface of base material, and its width is 100nm-1cm.
Described super-hydrophobic coat is one or more coatings formed in the coated nano silicon of fluorine-containing organic carbon compound, fluorine-containing organic silicon, fluorochemical; Described base material is the one in glass, pottery, silicon chip, plastic film, composite material.
The described solution containing conductive filler is metallo-organic complex solution or the conductive polymer solution of concentration 0.01-10wt%.
The described emulsion containing conductive filler is nano-metal particle dispersion liquid or the nano carbon particle dispersion liquid of concentration 0.01-10wt%.
Described metallo-organic complex is long chain organic acid silver; Described conducting polymer is poly-3,4-ethylene dioxythiophene and poly styrene sulfonate; Described nano-metal particle is Nano Silver, nm of gold, Nanometer Copper; Described nano carbon particle is CNT (carbon nano-tube), nano-graphene, nano-graphite.
Preparation is one or more in alcoholic solvent, water containing the solution of conductive filler or the solvent of emulsion.
Base material heating temperature described in step (4) is normal temperature-100 DEG C.
The temperature that is heating and curing described in step (5) is 120-550 DEG C; Photon sintering curing is infrared, xenon lamp pulse, plasma or xenon lamp sintering curing.
Above-mentioned prepare high accuracy, spacing-controllable telegraph circuit width be 5nm-100 μm, preferred 1-20 μm.
Advantage of the present invention:
1) front utilizes coffee ring phenomenon and principle thereof, provides a kind of simple and easy, low cost, environmental protection, prepares the method for high-precision electrode fast.
2) adopt super-hydrophobic coat in hydrophilic base material surface construction low-surface-energy and high surface energy district, wherein low-surface-energy district suppresses containing the solution of conductive filler or the diffusion of emulsion as dykes and dams, thus realizes the spacing-controllable that this method prepares electrode.
3) this method had both been applicable to laboratory structure device electrode, faster devices research and development progress; Also be applicable to big batch and prepare high-precision electrode.
4) the present invention prepares high accuracy, spacing-controllable electrode have important application in the high-precision electrode preparing the devices such as nesa coating, high end sensor, transistor, memory, capacitor.
Accompanying drawing explanation
Fig. 1. coffee ring forms process schematic.
Fig. 2. print Nano Silver emulsion lines and prepare high precision electrode circuits schematic diagram.
Fig. 3. print Nano Silver emulsion in embodiment 2, two high-precision circuits (A) diffuseed to form to three-phase line of contact due to coffee toroidal effect Nano Silver and edge circuit part Nano Silver pile up electromicroscopic photograph (B).
Fig. 4. prepare spacing-controllable high-precision circuit schematic diagram in conjunction with high and low surface energy surface and coffee toroidal effect.
Embodiment
Embodiment 1
Preparing live width about 5 μm at high temperature resistance polyester (PET) substrate surface, the high precision electrode circuits that spacing is about 70 μm, preparing large scale transparent conductive film for studying gridding method (MetalMesh).
(1) first prepare by high surface energy district and low-surface-energy district pattern alternately in pet sheet face, described low-surface-energy district is the silicon fluoride of thickness 500nm, and high surface energy district is the intrinsic surface of PET, and its width is 80 μm; Described low-surface-energy district contact angle 69.4 °; High surface energy district contact angle 125.5 °;
(2) 2g conducting polymer is gathered 3,4-ethylene dioxythiophene and poly styrene sulfonate mixture (Bayer BayerAG company) is scattered in 98g water, obtained solid content is the conductive polymer solution of 2wt%;
(3) conductive polymer solution is paved with high surface energy district, then at 35 DEG C of temperature, 5min is heated, conductive polymer solution is made to be diffused into both sides, high surface energy district and evaporation removing aqueous solvent, because solution is stopped by low-surface-energy district silicon fluoride, final conducting polymer enrichment is arranged in the borderline region that low-surface-energy district is closed in high surface energy district, define live width about 5 μm, the conducting polymer that spacing is about 70 μm piles up pattern;
(4), after toasting 20min under eventually passing 150 DEG C of environment, required high precision electrode circuits is prepared.
Embodiment 2
Prepare live width about 10 μm at monocrystalline silicon surface, the transistor electrodes of spacing about 80 μm, 120 μm, 160 μm and 200 μm, for the impact of Electrode spacing on organic transistor performance.
(1) first prepare by high surface energy district and low-surface-energy district pattern alternately at monocrystalline silicon surface, described low-surface-energy district is the C12 perfluor alkane of the thickness 300nm of deposition at 190 DEG C, high surface energy district is the intrinsic surface of monocrystalline silicon, and its width is respectively 100 μm, 140 μm, 180 μm and 220 μm; Described low-surface-energy district contact angle 39.7 °; High surface energy district contact angle 127.7 °;
(2) be that the Nano Silver of 30-50nm is scattered in 96g water by 4g particle size range, obtained solid content is 4wt% Nano Silver emulsion;
(3) Nano Silver emulsion is paved with high surface energy district, continuous heating 15min at 30 DEG C of temperature, Nano Silver emulsion is made to be diffused into both sides, high surface energy district and evaporation removing aqueous solvent, because emulsion is stopped by low-surface-energy district C12 perfluor alkane, final Nano Silver enrichment is arranged in the borderline region that low-surface-energy district is closed in high surface energy district, define live width about 10 μm, spacing is respectively the transistor electrodes of 80 μm, 120 μm, 160 μm and 200 μm;
(4), after eventually passing 1.5W power 830nm infrared laser Fast Sintering 2s, required high-precision electrode is prepared.
Embodiment 3
Live width about 20 μm is prepared, the blood sugar electrochemical sensor electrodes that spacing is about 500 μm at polyvinyl chloride (PVC) film surface.
(1) first prepare by high surface energy district and low-surface-energy district pattern alternately on PVC film surface, described low-surface-energy district is silicon fluoride and nano silicon (particle diameter 20nm) mixed coating of thickness 800nm, high surface energy district is the intrinsic surface of PVC film, and its width is 540 μm; Described low-surface-energy district contact angle 48.3 °; High surface energy district contact angle 148.4 °;
(2) be that the nm of gold of 5-10nm is scattered in 92g water by 8g particle size range, obtained solid content is 8wt% nm of gold emulsion;
(3) nm of gold emulsion is paved with high surface energy district, continuous heating 10min at 45 DEG C of temperature, nm of gold emulsion is made to be diffused into both sides, high surface energy district and evaporation removing aqueous solvent, because emulsion is stopped by low-surface-energy district, final nm of gold enrichment is arranged in the borderline region that low-surface-energy district is closed in high surface energy district, define live width about 20 μm, spacing is that the nm of gold of 500 μm piles up pattern;
(4), after eventually passing 20W power Xenon xenon flash lamp Fast Sintering 0.5s, required blood sugar electrochemical sensor high-precision electrode is prepared.
Claims (10)
1. a preparation method for high accuracy, spacing-controllable electrode, is characterized in that, its concrete operation step is:
(1) design preparation surface is by high surface energy district and low-surface-energy district base material alternately;
(2) preparation contains solution or the emulsion of conductive filler;
(3) solution containing conductive filler or emulsion are paved with high surface energy district;
(4) made by base material heating the solution containing conductive filler or emulsion be diffused into both sides, high surface energy district and evaporation of solvent, final conductive filler enrichment is arranged in the borderline region that low-surface-energy district is closed in high surface energy district;
(5) conductive filler of diffusion enrichment is heating and curing or photon sintering curing, and then forms high accuracy, spacing-controllable electrode.
2. method according to claim 1, is characterized in that, described low-surface-energy district contact angle is greater than 120 °; High surface energy district contact angle is less than 90 °.
3. method according to claim 1, is characterized in that, described low-surface-energy district is the super-hydrophobic coat of thickness 1nm-0.1cm; High surface energy district is the intrinsic surface of base material, and its width is 100nm-1cm.
4. method according to claim 3, is characterized in that, described super-hydrophobic coat is one or more coatings formed in the coated nano silicon of fluorine-containing organic carbon compound, fluorine-containing organic silicon, fluorochemical; Described base material is the one in glass, pottery, silicon chip, plastic film, composite material.
5. method according to claim 1, is characterized in that, the described solution containing conductive filler is metallo-organic complex solution or the conductive polymer solution of concentration 0.01-10wt%; The described emulsion containing conductive filler is nano-metal particle dispersion liquid or the nano carbon particle dispersion liquid of concentration 0.01-10wt%.
6. method according to claim 5, is characterized in that, described metallo-organic complex is long chain organic acid silver; Described conducting polymer is poly-3,4-ethylene dioxythiophene and poly styrene sulfonate; Described nano-metal particle is Nano Silver, nm of gold, Nanometer Copper; Described nano carbon particle is CNT (carbon nano-tube), nano-graphene, nano-graphite.
7. method according to claim 1, is characterized in that, preparation is one or more in alcoholic solvent, water containing the solution of conductive filler or the solvent of emulsion.
8. method according to claim 1, is characterized in that, the base material heating temperature described in step (4) is normal temperature-100 DEG C.
9. method according to claim 1, is characterized in that, the temperature that is heating and curing described in step (5) is 120-550 DEG C; Photon sintering curing is infrared, xenon lamp pulse, plasma or xenon lamp sintering curing.
10., according to high accuracy, spacing-controllable electrode that the arbitrary described method of claim 1-9 prepares, it is characterized in that, the width of this telegraph circuit is 5nm-100 μm, preferred 1-20 μm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106648259A (en) * | 2017-01-09 | 2017-05-10 | 京东方科技集团股份有限公司 | Touch screen manufacturing method, touch screen and displaying device |
| WO2019056260A1 (en) * | 2017-09-21 | 2019-03-28 | 深圳市柔宇科技有限公司 | Touch control electrode and manufacturing method |
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| JPH07101695B2 (en) * | 1990-09-19 | 1995-11-01 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
| CN1496198A (en) * | 2002-08-02 | 2004-05-12 | ����Sdi��ʽ���� | Substrate and organic electroluminescent device using the same |
| CN1698208A (en) * | 2002-08-14 | 2005-11-16 | 先进模拟科技公司 | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
| CN101969026A (en) * | 2010-08-27 | 2011-02-09 | 上海交通大学 | Electrode preparation method based on ink jet printing and laser interference exposure |
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2014
- 2014-12-03 CN CN201410725859.9A patent/CN104464956B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH07101695B2 (en) * | 1990-09-19 | 1995-11-01 | 株式会社日立製作所 | Method for manufacturing semiconductor device |
| CN1496198A (en) * | 2002-08-02 | 2004-05-12 | ����Sdi��ʽ���� | Substrate and organic electroluminescent device using the same |
| CN1698208A (en) * | 2002-08-14 | 2005-11-16 | 先进模拟科技公司 | Complementary analog bipolar transistors with trench-constrained isolation diffusion |
| CN101969026A (en) * | 2010-08-27 | 2011-02-09 | 上海交通大学 | Electrode preparation method based on ink jet printing and laser interference exposure |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106648259A (en) * | 2017-01-09 | 2017-05-10 | 京东方科技集团股份有限公司 | Touch screen manufacturing method, touch screen and displaying device |
| CN106648259B (en) * | 2017-01-09 | 2020-07-03 | 京东方科技集团股份有限公司 | Preparation method of touch screen, touch screen and display device |
| WO2019056260A1 (en) * | 2017-09-21 | 2019-03-28 | 深圳市柔宇科技有限公司 | Touch control electrode and manufacturing method |
| CN110709804A (en) * | 2017-09-21 | 2020-01-17 | 深圳市柔宇科技有限公司 | Manufacturing method of touch electrode |
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