CN104459992B - Pel array and preparation method and display device - Google Patents
Pel array and preparation method and display device Download PDFInfo
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- CN104459992B CN104459992B CN201410840772.6A CN201410840772A CN104459992B CN 104459992 B CN104459992 B CN 104459992B CN 201410840772 A CN201410840772 A CN 201410840772A CN 104459992 B CN104459992 B CN 104459992B
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Abstract
The invention discloses pel array and preparation method and display device.The pel array includes：One substrate is provided, is sequentially formed with thereon：The first metal layer, gate insulator, semiconductor layer, second metal layer, wherein, second metal layer forms the first area of data wire and forms the second area of the first pixel electrode, and the first area uses at least two metal alloy layers, the second area to use single metal layer.The manufacture method of the pel array includes：Realize that second metal layer first area is single-layer metal structure for metal alloy stack structure and second area respectively using two binary mask plates, or a ternary mask plate.Can not only realize that pixel aperture ratio is maximized by the present invention, storage capacitance can also be strengthened, realize the stability that electrowetting shows.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of pel array and preparation method and display device.
Background technology
Electrowetting (Electro wetting) Display Technique is using oil and the intrinsic natural force of water termination and be to utilize this
A little strength and the Display Technique developed.The hydrophobic pigment hydrophobic surfaces such as dyeing oil droplet are adjusted particular by applied voltage
Hydrability, dyed oil is dropped in when being not added with voltage and be uniformly dispersed in pixel, be pushed to pixel rapidly after application of a voltage
Edge, so as to realize that color gray rank shows.
As a kind of reflective Display Technique, the light reflection efficiency of electric moistening display more than 50%, therefore, brightness ratio one
As passive display device twice high, still be may be viewed by under strong sunlight.Meanwhile, electric moistening display is without polaroid, without pole
Change, there is no angular field of view to limit, all visible angles all show stabilization.Further, since without back lighting, it is possible to significantly
Degree reduces power consumption.In addition with the general display device without backlight, such as Electronic Paper is compared, and the advantage of electric moistening display is loud
Answer speed faster.
The preparation method of traditional electric moistening display includes：One substrate is provided, the first metal is at least sequentially formed with thereon
Layer M1 (GE), semiconductor layer (AS), second metal layer M2 (SD), PAS protective layers (CH), flatness layer (ORG), ito transparent electrode
Layer, reflective metal layer M3, sandwich construction (MBL), hydrophobic layer (FB) and hydrophily separation layer form pixel waterwall (pixel
Wall) etc..
In order that storage capacitance Cst is maximized and is maximized the aperture opening ratio of pixel, the gold formed by second metal layer
Category pixel electrode need to be covered with the open region of whole pixel, Chong Die with the public electrode formed by the first metal layer, form capacitance
Larger parallel plate capacitor Cst.The common used material of second metal layer is combined as Mo/Al/Mo or is Al alloy materials, when
After the protective layer PAS of two metal layers forms contact hole, ito transparent electrode is electric with the metal pixel formed by second metal layer
Mo or Al alloys conducting in extremely, makes ito transparent electrode form equipotential with metallic pixel electrodes.
The pel array that existing manufacture craft makes, in pixel openings region, is easily caused the contact of protective layer formation
Reverse chamfering is formed between bore region and following second metal layer, causes ito transparent electrode to be broken at reverse chamfering,
The voltage of pixel electrode can not normally be transferred to ito transparent electrode, so as to the storage capacitance size of pixel region can be reduced, influence
The stability that electrowetting display device shows.
The content of the invention
In view of this, in order to solve of the prior art above-mentioned or other are not enough, present invention is primarily aimed at providing one
Pel array and preparation method and display device are planted, the manufacture method of the pel array provided using the present invention ensure that
Effective conducting between metallic pixel electrodes and transparent pixel electrode, increases the storage capacitance of pixel so that display device
Exhibit stabilization is greatly improved.
To realize above-mentioned purpose, one aspect of the present invention proposes a kind of pel array, including：A substrate is provided, thereon
It is sequentially formed with：The first metal layer, gate insulator, semiconductor layer, second metal layer, wherein, second metal layer forms data
The second area of first pixel electrode of first area and formation of line, the first area uses at least two metal alloy layers,
The second area uses single metal layer.
Further, it is also formed with protective layer on second metal；Transparent electrode layer；One hydrophily separation layer, is used for
The multiple pixel regions of definition.
Further, the first metal layer is at least formed with scan line, public electrode；The second metal layer at least shape
Into having data wire, the first pixel electrode；The transparent electrode layer is at least formed with the second pixel electrode, second pixel electrode
Electrically connected with first pixel electrode by contact hole；Wherein, the contact hole is formed in the pixel region.
Further, the material of two metal alloy layer is Al and Ti, and the material of the single metal layer is Ti.
Another aspect of the present invention proposes a kind of display device, including：One substrate, is formed with above-mentioned pel array thereon；
One counter substrate, and be folded between the substrate and the counter substrate a polar solvent layer and non-polar solution display
Dielectric layer.
Another aspect of the invention proposes a kind of preparation method of pel array, specifically includes following steps：One base is provided
Plate, is sequentially formed with thereon：The first metal layer, gate insulator, semiconductor layer, second metal layer, wherein, second metal layer is led to
Cross double exposure etching twice to form the first area of data wire and form the second area of the first pixel electrode, described first
Region uses at least two metal alloy compositions, the second area to use single-layer metal material.
Further, the metal alloy compositions are Al and Ti, and the single-layer metal material is Ti.
Further aspect of the present invention proposes a kind of preparation method of pel array, specifically includes following steps：One base is provided
Plate, is sequentially formed with thereon：The first metal layer, gate insulator, semiconductor layer, second metal layer, wherein, second metal layer is led to
Cross single exposure and etch the first area to form data wire and the second area for forming the first pixel electrode, described first twice
Region uses at least two metal alloy compositions, the second area to use single-layer metal material.
Further, carry out using gray-level mask in single exposure, the gray-level mask region is to secondth area
Domain.
Further, the metal alloy compositions are Al and Ti, and the single-layer metal material is Ti.
The present invention compared with prior art, the advantage is that：Pel array and preparation method, Yi Jixian that the present invention is provided
Showing device, can not only realize that pixel aperture ratio is maximized, and can also strengthen storage capacitance, realize the stabilization that electrowetting shows
Property.
Brief description of the drawings
Fig. 1 is the planar structure schematic diagram for schematically showing a pixel in present invention pixel array；
Fig. 2 is to schematically show the generalized section in Fig. 1 of the present invention along A-A ' directions；
Fig. 3 A are to schematically show a photoetching process schematic diagram in one embodiment of the invention pel array preparation method；
Fig. 3 B illustrate to schematically show secondary photoetching process in the above embodiment of the present invention pel array preparation method
Figure；
Fig. 4 illustrates to schematically show a photoetching process in another embodiment of the present invention pel array preparation method
Figure.
Specific embodiment
In the following description, in order to illustrate, propose many concrete details to provide complete understanding of the present invention.
But it is clear that the present invention can be implemented as without these details.In other cases, it is known that structure and equipment are with block diagram
Form shows, unnecessary to misunderstanding of the invention to avoid.
Fig. 1 is the planar structure schematic diagram for schematically showing a pixel in present invention pixel array.As shown in figure 1, to make
Storage capacitance Cst is maximized and is maximized the aperture opening ratio of pixel, and the metallic pixel electrodes 35 formed by second metal layer are needed
It is covered with the open region of whole pixel, it is overlap with the public electrode 32 formed by the first metal layer, form larger parallel of capacitance
Plate electric capacity Cst.The common used material of second metal layer is combined as Mo/Al/Mo or is Al alloy materials, when in second metal layer
After the passivation layer PAS of side digs out contact hole 36, in ito transparent electrode 37 and the metallic pixel electrodes 35 formed by second metal layer
The conducting of Mo or Al alloys, ito transparent electrode 37 and metallic pixel electrodes 35 is formed equipotential.
For example, when second metal layer is Ti/Al structures, as the passivation layer PAS above second metal layer
After digging out contact hole 36, the Al metals between passivation layer PAS and Ti metal be often etched faster, it is more, cause blunt
Change and form reverse chamfering between layer and following Al metal levels, cause ito transparent electrode 37 to be broken at reverse chamfering, gold
The voltage for belonging to pixel electrode can not normally be transferred to ito transparent electrode 37.If metallic pixel electrodes 35 done in open region
Into figure, the storage capacitance size of pixel region, the stability that influence electrowetting shows will be reduced.
Fig. 2 is to schematically show the generalized section in Fig. 1 of the present invention along A-A ' directions.Asked to solve above-mentioned technology
Topic, with reference to Fig. 1 and Fig. 2 is referred to, the present invention provides a pel array, including：One substrate 50 is provided, is sequentially formed with thereon：The
One metal level 52, gate insulator and semiconductor layer 53, second metal layer 55, wherein, second metal layer forms data wire 34
The second area B, the first area A of first area A and formation metallic pixel electrodes 35 use at least two metal alloy layers
55a, 55b, the second area B use single metal layer 55b.Preferably, described metal alloy compositions 55a, 55b are Al and Ti,
The single-layer metal material 55b is Ti.
Actual when using, being also formed with protective layer 57 on second metal；Transparent electrode layer 37, it is therefore preferable to
Ito transparent electrode；One hydrophily separation layer 38, for defining multiple pixel regions.
Further, the first metal layer 52 is at least formed with scan line 31, public electrode 32；The second metal layer
At least formed with data wire 34, metallic pixel electrodes 35；The transparent electrode layer 37 is described at least formed with transparent pixel electrode
Transparent pixel electrode is electrically connected by contact hole 36 with the metallic pixel electrodes 35；Also include the scan line 31 as grid
Pole, the extended line along the scan-line direction of data wire 34 drain as the conduct of source electrode and the metallic pixel electrodes 35
The thin film transistor (TFT) 33 of formation；Wherein, the contact hole 36 is formed in the pixel region.
Another aspect of the present invention proposes a kind of display device, including：One substrate, is formed with above-mentioned pel array thereon；
One counter substrate, and be folded between the substrate and the counter substrate a polar solvent layer and non-polar solution display
Dielectric layer.Preferably, the substrate is array base palte, and the counter substrate is colored filter, and the non-polar solution is band
There is display color dyestuff.
In order to solve the above technical problems, the present invention has reintroduced the manufacture method of above-mentioned pel array, including：
Using two binary mask plates, using first binary mask plate, by first time exposure etching work
Skill, forms the pattern of respective data lines 34 and the pattern of correspondence metallic pixel electrodes 35 in second metal layer 55.Reuse
Two binary mask plates, carry out second exposure etching technics, remove the Al metal levels on metallic pixel electrodes 35.Pass through
Described double exposure etching technics, makes the second metal layer on data wire 34 form Ti/Al structures, makes the metal picture of open region
Plain electrode 35 forms the Ti structures of individual layer.
Using a ternary mask plate, primary exposure-development process and twice etching technique are carried out, made on data wire
Second metal layer formed Ti/Al structures, make open region metallic pixel electrodes formed individual layer Ti structures.
It is that above and other objects of the present invention, feature and advantage can be become apparent, preferred embodiment cited below particularly,
And coordinate accompanying drawing to be described in detail below.
Embodiment 1
Fig. 3 A are to schematically show a photoetching process schematic diagram in one embodiment of the invention pel array preparation method；Figure
3B is to schematically show secondary photoetching process schematic in the above embodiment of the present invention pel array preparation method.Such as Fig. 3 A, 3B
Shown, the embodiment of the present invention 1 proposes a kind of preparation method of pel array, specifically includes following steps：One substrate 50 is provided,
It is sequentially formed with thereon：The first metal layer, gate insulator and semiconductor layer 53, second metal layer 55, wherein, second metal layer
55 form the first area A of data wire and form the second area B of the first pixel electrode by double exposure etching twice.Tool
Body ground, the preparation method is carried out continuously the film forming of Ti metals and Al metals using physical vapour deposition (PVD) PVD technique, forms second
Metal level 55.Then, exposure etching technics for the first time is carried out using the first mask 10, the firstth area is formed in second metal layer 55
The pattern of domain A correspondence first area A respective data lines and the pattern of the corresponding metallic pixel electrodes of second area B.Then, utilize
Second mask 10 ' carries out second exposure etching technics again, removes the Al metal levels on metallic pixel electrodes.Wherein, first and second
Mask 10,10 ' is ternary mask plate.
By described double exposure etching technics, the second metal layer 55 of first area A is set to form two metal alloy layers
55a, 55b, make the corresponding metallic pixel electrodes of second area B form single-layer metal 55b.Preferably, two described metal alloys
Layer 55a, 55b use Ti/Al alloy materials, the single-layer metal 55b to use Ti structures.
The pel array technological process that the embodiment of the present invention one is provided, compared with the technological process of traditional array base palte,
The technological process of embodiment one increased single exposure technique and an etching technics in the processing procedure of second metal layer.From
And the effective conducting between metallic pixel electrodes and transparent pixel electrode is ensure that, and the storage capacitance of pixel can be increased, make
The exhibit stabilization for obtaining display device is greatly improved.
Embodiment 2
Fig. 4 is to schematically show a photoetching process schematic diagram in another embodiment of the present invention pel array preparation method.
As shown in figure 4, the embodiment of the present invention 2 proposes a kind of preparation method of pel array, following steps are specifically included：One base is provided
Plate 50, is sequentially formed with thereon：The first metal layer, gate insulator and semiconductor layer 53, second metal layer 55, wherein, second
Metal level 55 etches the first area A to form data wire and the secondth area for forming the first pixel electrode by single exposure twice
Domain B.
Specifically, the preparation method using physical vapour deposition (PVD) PVD technique be carried out continuously Ti metals and Al metals into
Film, forms second metal layer.Then, using the primary exposure-development process of the 3rd mask of GTG 20 and twice etching technique, is made
Second metal layer on the data wire of one region A forms Ti/Al structures, makes the Ti of the metallic pixel electrodes formation individual layer of open region
Structure.Wherein, the 3rd mask is ternary mask plate.
Fig. 4 illustrates to schematically show a photoetching process in another embodiment of the present invention pel array preparation method
Figure.Compared with the technological process of traditional array base palte, the technological process of embodiment 2 increases in the processing procedure of second metal layer
An etching technics is added.So as to ensure the effective conducting between metallic pixel electrodes and ito transparent electrode, picture can be increased
The storage capacitance of element so that the exhibit stabilization of display device is greatly improved.
It will be understood by those skilled in the art that pel array disclosed in this invention is except being included in electricity of the invention
Beyond wetting display device, can also be included in other display devices that other need increase aperture opening ratio and storage capacitance, together
When, above-mentioned metal alloy layer and single metal layer are in addition to from Ti/Al and Al, it is also possible to replace with its of same nature
His metal or metal alloy.
The preferred embodiment of the present invention described in detail above, but, the present invention is not limited in above-mentioned implementation method
Detail, in range of the technology design of the invention, various equivalents can be carried out to technical scheme, this
A little equivalents belong to protection scope of the present invention.
Claims (8)
1. a kind of pel array, including：One substrate, is sequentially formed with thereon：The first metal layer, gate insulator, semiconductor layer,
Second metal layer, wherein, second metal layer forms the first area of data wire and forms the second area of the first pixel electrode,
The first area uses at least two metal alloy layers, the second area to use single metal layer；Shape is gone back on second metal
Into matcoveredn；Transparent electrode layer；One hydrophily separation layer, for defining multiple pixel regions；
The first metal layer is at least formed with scan line, public electrode；The second metal layer is at least formed with data wire,
One pixel electrode；The transparent electrode layer at least formed with the second pixel electrode, second pixel electrode by contact hole with
The first pixel electrode electrical connection；Wherein, the contact hole is formed in the pixel region.
2. pel array according to claim 1, it is characterised in that：The material of two metal alloy layer is Al and Ti, institute
The material for stating single metal layer is Ti.
3. a kind of display device, including：One substrate, is formed with pel array as claimed in claim 1 or 2 thereon；One is opposed
Substrate, and be folded between the substrate and the counter substrate a polar solvent layer and non-polar solution display medium
Layer.
4. a kind of preparation method of pel array, specifically includes following steps：
One substrate is provided, is sequentially formed with thereon：The first metal layer, gate insulator, semiconductor layer, second metal layer, wherein,
Second metal layer forms the second of first pixel electrode of first area and formation of data wire by double exposure etching twice
Region, the first area uses at least two metal alloy compositions, the second area to use single-layer metal material；
Protective layer is also formed with second metal；Transparent electrode layer；One hydrophily separation layer, for defining multiple pixel regions
Domain；
The first metal layer is at least formed with scan line, public electrode；The second metal layer is at least formed with data wire,
One pixel electrode；The transparent electrode layer at least formed with the second pixel electrode, second pixel electrode by contact hole with
The first pixel electrode electrical connection；Wherein, the contact hole is formed in the pixel region.
5. the preparation method of pel array according to claim 4, it is characterised in that：The metal alloy compositions be Al and
Ti, the single-layer metal material is Ti.
6. a kind of preparation method of pel array, specifically includes following steps：
One substrate is provided, is sequentially formed with thereon：The first metal layer, gate insulator, semiconductor layer, second metal layer, wherein,
Second metal layer etches the second of the first pixel electrode of first area and formation to form data wire by single exposure twice
Region, the first area uses at least two metal alloy compositions, the second area to use single-layer metal material；
Protective layer is also formed with second metal；Transparent electrode layer；One hydrophily separation layer, for defining multiple pixel regions
Domain；
The first metal layer is at least formed with scan line, public electrode；The second metal layer is at least formed with data wire,
One pixel electrode；The transparent electrode layer at least formed with the second pixel electrode, second pixel electrode by contact hole with
The first pixel electrode electrical connection；Wherein, the contact hole is formed in the pixel region.
7. the preparation method of pel array according to claim 6, it is characterised in that：Carry out using ash in single exposure
Rank light shield, the gray-level mask region is to the second area.
8. according to claim 6 or 7 pel array preparation method, it is characterised in that：The metal alloy compositions are Al
And Ti, the single-layer metal material is Ti.
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| CN104795406A (en) * | 2015-04-22 | 2015-07-22 | 南京中电熊猫液晶显示科技有限公司 | Array substrate and production method thereof |
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| CN1506730A (en) * | 2002-12-10 | 2004-06-23 | 精工爱普生株式会社 | Colour filter base plate, electro-optical apparatus and their producing method, and electronic equipment |
| CN101650505A (en) * | 2008-08-14 | 2010-02-17 | 三星电子株式会社 | Thin film transistor display panel and method of manufacturing the same |
| CN102455591A (en) * | 2010-10-14 | 2012-05-16 | 京东方科技集团股份有限公司 | Manufacturing method for thin film pattern and array substrate |
| CN103872061A (en) * | 2012-12-10 | 2014-06-18 | 乐金显示有限公司 | Array substrate and method of fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100475110B1 (en) * | 2001-12-26 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | Reflective type Liquid Crystal Display Device and method for manufacturing the same |
| JP4537929B2 (en) * | 2005-10-04 | 2010-09-08 | エルジー ディスプレイ カンパニー リミテッド | Liquid crystal display device and method of manufacturing liquid crystal display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1506730A (en) * | 2002-12-10 | 2004-06-23 | 精工爱普生株式会社 | Colour filter base plate, electro-optical apparatus and their producing method, and electronic equipment |
| CN101650505A (en) * | 2008-08-14 | 2010-02-17 | 三星电子株式会社 | Thin film transistor display panel and method of manufacturing the same |
| CN102455591A (en) * | 2010-10-14 | 2012-05-16 | 京东方科技集团股份有限公司 | Manufacturing method for thin film pattern and array substrate |
| CN103872061A (en) * | 2012-12-10 | 2014-06-18 | 乐金显示有限公司 | Array substrate and method of fabricating the same |
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