CN104459481A - High-voltage silicon rectifier stack device - Google Patents
High-voltage silicon rectifier stack device Download PDFInfo
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- CN104459481A CN104459481A CN201310439575.9A CN201310439575A CN104459481A CN 104459481 A CN104459481 A CN 104459481A CN 201310439575 A CN201310439575 A CN 201310439575A CN 104459481 A CN104459481 A CN 104459481A
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Abstract
The invention relates to a high-voltage silicon rectifier stack device. The high-voltage silicon rectifier stack device comprises a plurality of silicon disks (1). Each silicon disk (1) is provided with a silicon particle string (2) and a grading ring (4). Each silicon particle string (2) is formed by connecting a plurality of silicon diodes (21) in series. Each silicon diode (21) of the silicon particle strings (2) is connected with a corresponding grading resistor (22) and a corresponding grading capacitor (23) in parallel. The high voltage output end of each silicon disk (1) is provided with protective resistors (5). The protective resistors are arranged to adapt to the situation that high-frequency overvoltage generated by a direct current generator at the time of flashover discharge of a test object is exerted on the protective resistors, the backward voltage of the diodes is reduced, the breakdown probability of the diodes is reduced, and due to the design of voltage sharing and protective pressures, the high-voltage silicon rectifier stack device achieves the satisfactory voltage sharing effect after being put into use.
Description
Technical field
The present invention relates to a kind of electric testing device, especially relate to a kind of high voltage direct current generator silicon stack device.
Background technology
High voltage direct current generator is mainly used in high voltage electric equipment and carries out DC voltage withstand test, and along with the lifting of the widespread use of extra-high voltage product and electric pressure, the technical requirement for high voltage direct current generator silicon stack is more and more higher.Along with the continuous lifting of electric pressure, ensure that silicon stack voltage's distribiuting evenly has good operation characteristic, avoid because indivedual silicon stack element is breakdown that whole silicon stack device cannot be worked problem just seems particularly important.
Publication number is that CN201876519U provides a kind of silicon stack device for this reason, it passes through at every diodes in parallel equalizing resistance and an equalizing capacitance, silicon stack voltage's distribiuting is very all pressed, adopts two groups of silicon particle connection in series-parallel syndetons simultaneously, effectively improve current-carrying.
But also there is following defect in technique scheme: the reverse voltage that diode is subject to is comparatively large, easily breakdown.
Summary of the invention
The present invention is directed to above-mentioned defect, object is the reverse voltage providing a kind of effective reduction diode to be subject to, and makes it be not easy breakdown, improves the high voltage silicon rectifier stack device in its serviceable life.
The technical solution used in the present invention is for this reason: comprise some silicone discs (1); silicone disc (1) is provided with silicon particle string (2) and grading ring (4); described silicon particle string (2) is in series by some silicon diodes (21); each silicon diode (21) of composition silicon particle string (2) is in parallel with an equalizing resistance (22) and an equalizing capacitance (23) respectively, and the high-voltage output end of silicone disc (1) establishes protective resistance (5).
Described protective resistance (5) adopts two and three string structures.
Described equalizing resistance (22) is metalfilmresistor, equalizing capacitance (23) ceramic disc capacitor.
Advantage of the present invention is: the present invention is provided with protective resistance; the superpotential voltage producing frequency higher when test product flashover discharges to adapt to DC generator is applied in protective resistance; reduce the reverse voltage of diode; reduce the probability of diode breakdown; this all presses the design with safeguard measure, reaches satisfied all pressures effect through using.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Fig. 2 is circuit theory diagrams of the present invention.
1 be silicone disc, 2 be silicon particle string in figure, 21 be silicon diode, 22 be equalizing resistance, 23 be equalizing capacitance, 4 be grading ring, 5 for protective resistance.
Embodiment
The present invention includes some silicone discs 1; silicone disc 1 is provided with silicon particle string 2 and grading ring 4; described silicon particle string 2 is in series by some silicon diodes 21; each silicon diode 21 of composition silicon particle string 2 is in parallel with an equalizing resistance 22 and an equalizing capacitance 23 respectively, and the high-voltage output end of silicone disc 1 establishes protective resistance 5.
Described protective resistance 5 adopts two and three string structures.
Described equalizing resistance 22 is metalfilmresistor, equalizing capacitance 23 ceramic disc capacitor.
In order to strengthen the safety coefficient of silicon stack, adapt to the running status of various superpotential and excess current, it is 2 kilovolts that design employs two groups of 3200 back-pressures (actual get 1/2 namely: 1 kilovolt), commutated current is that the silicon diode 21 of 1.5 amperes is gone here and there, compose in parallel and take capacitance-resistance and all press by force measure (going out equalizing resistance 22 in parallel and equalizing capacitance 23 at diode), add protective resistance 5 in the High voltage output side of silicone disc 1 simultaneously, protective resistance 5 adopts two and three strings, single resistance 68, the protective resistance of single silicone disc 1 is about 100, a whole set of silicon stack has 35 silicone discs 1, the protective resistance tissue of each silicon stack is made to reach 35k, the superpotential voltage producing frequency higher when test product flashover discharges to adapt to DC generator is almost all applied in protective resistance.Reduce the reverse voltage of silicon diode 21, reduce the probability that silicon diode 21 punctures, this all presses the design with safeguard measure, reaches satisfied all pressures effect, and we have successfully employed on tens cover high-voltage D.C. generators at present.
Because silicon stack device adopts silicon particle string 2 and corresponding equalizing capacitance 23 and equalizing resistance 22 to be welded on silicone disc 1, by the corresponding soldered elements of electrical equipment symbol shown in silicone disc 1, mainly control with test technique.
Element selected:
The silicon diode 21 that the design adopts, be 2 kilovolts at inverse peak voltage, reverse leakage current is below 2 microamperes, and commutated current is 1.5 amperes, the substandard two silicon pole pipes 21 of strict rejecting in refining process.
The 330k Ω that equalizing resistance 22 adopts market to sell, power 1W, the metalfilmresistor of error ± 5%, its volume is little, and temperature coefficient is little, is convenient to install, stable.
Equalizing capacitance 23 have employed ceramic disc capacitor, capacity 0.01uf, operating voltage 2 kilovolts, when delivery test is qualified, carries out again extremely strict sampling test, 4 kilovolts of DC voltage withstand tests have been done to 10 ceramic disc capacitors, pressing time is 5 minutes, after carried out again the withstand voltage test exchanging 2 kilovolts, pressurize 5 minutes, the ceramic disc capacitor after screening is all by testing.
Note: all electronic devices and components, is all screen in the transformer oil of high temperature, rejects the electric elements that some errors are larger.
Welding technology:
Silicone disc 1 is silicon cell and a unit of all pressing element composition, and dish type P.e.c. will carry out the welding of pole multicomponent, and solder joint is smooth, smooth, firm.
Each silicone disc 1 weld complete after to endure strict scrutiny, this is the important step ensureing silicon stack quality, then scrubs the rosinol on silicone disc 1 solder joint with ethanol, cleans post-drying.
Silicone disc is tested:
In insulating oil, carried out complete dynamically type approval test respectively to three silicone discs 1, on capacitor, DC voltage is 10 kilovolts, and commutated current is 1.5 amperes, and now the actual inverse peak voltage that bears of silicone disc 1 is 20 kilovolts, tests 5 minutes, all right.In addition after each silicone disc 1 paint-dipping process completes, all will by half dynamically, inverse peak voltage is the customary withstand voltage test of 20kV, and test period is 1 minute.
By above control, silicon stack device meets 2MV DC generator.
Claims (3)
1. high voltage silicon rectifier stack device; comprise some silicone discs (1); silicone disc (1) is provided with silicon particle string (2) and grading ring (4); described silicon particle string (2) is in series by some silicon diodes (21); each silicon diode (21) of composition silicon particle string (2) is in parallel with an equalizing resistance (22) and an equalizing capacitance (23) respectively; it is characterized in that, the high-voltage output end of silicone disc (1) establishes protective resistance (5).
2. high voltage silicon rectifier stack device according to claim 1, is characterized in that: described protective resistance (5) adopts two and three string structures.
3. high voltage silicon rectifier stack device according to claim 1, is characterized in that, described equalizing resistance (22) is metalfilmresistor, equalizing capacitance (23) ceramic disc capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310439575.9A CN104459481A (en) | 2013-09-25 | 2013-09-25 | High-voltage silicon rectifier stack device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310439575.9A CN104459481A (en) | 2013-09-25 | 2013-09-25 | High-voltage silicon rectifier stack device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104459481A true CN104459481A (en) | 2015-03-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310439575.9A Pending CN104459481A (en) | 2013-09-25 | 2013-09-25 | High-voltage silicon rectifier stack device |
Country Status (1)
| Country | Link |
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| CN (1) | CN104459481A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110417285A (en) * | 2019-06-30 | 2019-11-05 | 武汉东城新能源有限公司 | A kind of novel high-frequency high voltage silicon rectifier stack circuit |
| CN116699206A (en) * | 2023-07-28 | 2023-09-05 | 国网江苏省电力有限公司常州供电分公司 | Corona-resistant voltage device of high-voltage rectifying silicon stack |
-
2013
- 2013-09-25 CN CN201310439575.9A patent/CN104459481A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110417285A (en) * | 2019-06-30 | 2019-11-05 | 武汉东城新能源有限公司 | A kind of novel high-frequency high voltage silicon rectifier stack circuit |
| CN116699206A (en) * | 2023-07-28 | 2023-09-05 | 国网江苏省电力有限公司常州供电分公司 | Corona-resistant voltage device of high-voltage rectifying silicon stack |
| CN116699206B (en) * | 2023-07-28 | 2023-11-14 | 国网江苏省电力有限公司常州供电分公司 | Corona-resistant voltage device of high-voltage rectifying silicon stack |
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150325 |