CN104458003B - One kind detection infra-red radiation method - Google Patents
One kind detection infra-red radiation method Download PDFInfo
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- CN104458003B CN104458003B CN201410681201.2A CN201410681201A CN104458003B CN 104458003 B CN104458003 B CN 104458003B CN 201410681201 A CN201410681201 A CN 201410681201A CN 104458003 B CN104458003 B CN 104458003B
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- infrared
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- red radiation
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Abstract
Infra-red radiation method is detected the invention discloses one kind.The corresponding photon energy of infra-red radiation is smaller, is difficult to be detected using Si-based photodetectors.The present invention is using background light source electron excitation to SrAl2O4:(Eu2+,Dy3+) Dy in material forbidden band3+Trap level, the launch wavelength of background light source is 350~450nm.When there is Infrared irradiation, the electronics in trap level can transit to conduction band, and be further diverted into Eu2+Green glow is given off after energy level, causes the enhancing of visible radiation intensity.By measuring SrAl2O4:(Eu2+,Dy3+) green intensity that sends can measure the intensity of infra-red radiation indirectly.The present invention utilizes SrAl2O4:(Eu2+,Dy3+) material be up-conversion, transfer process is not related to multiphoton processes, therefore conversion efficiency is higher, as long as under the irradiation of background light source, you can effectively detect infra-red radiation.
Description
Technical field
The invention belongs to detection technique field, and in particular to a kind of infrared detective method.
Background technology
Because the corresponding photon energy of infra-red radiation is smaller, therefore it is difficult to be detected using Si-based photodetectors.By
There was only 1.12eV in the energy gap of silicon, corresponding infrared detection is reached the standard grade wavelength about 1100nm.Therefore, in theory based on light
The silicon based opto-electronicses Detection Techniques of raw carrier can not infra-red radiation of the probing wave length more than 1100nm.Infrared up conversion is exactly not
The visible ray that the infra-red radiation easily detected is converted into being easier to detection detected, infrared detective, biological label and monitoring,
There is potential application value in terms of drug therapy and mark, and military sensory field.Current most of infrared up conversion
Multi-Photon Excitation is mainly used, conversion efficiency is very low, and actual application value is little.
We have found under study for action, have been co-doped with Dy3+And Eu2+The SrAl of impurity2O4:(Eu2+,Dy3+) long after glow luminous material
Forbidden band in exist it is a series of close to Al2SrO4The Dy at conduction band bottom3+Impurity energy level, is shown in Fig. 1.Generally, into these energy
Electronics in level can stop long time, but can be by thermal excitation and enter Al2SrO4Conduction band and pass through Eu2+Energy level
Discharge and form green twilight sunset.But, if now there is infra-red radiation, the electronics in these impurity energy levels can be in infrared spoke
Conduction band is transitted under the exciting penetrated, then passes through SrAl2O4:(Eu2+,Dy3+) in Eu2+Energy level transition, which is got off, launches green glow.By
It is significantly larger than the efficiency of room temperature thermal excitation in this launching efficiency, so as to cause the enhancing of green-light radiation intensity, from there through right
The monitoring of green intensity may detect the presence of infra-red radiation.Meanwhile, according to the enhanced amplitude of green glow, it can calculate infrared
The relative intensity of radiation.
The content of the invention
The present invention is related to the low shortcoming of multiphoton processes infrared up conversion efficiency for tradition, it is proposed that one kind is based on long remaining
The method that the infrared up conversion effect of brightness luminescent material detects infra-red radiation.
The inventive method utilizes the infrared up conversion effect of long after glow luminous material, and longer wavelengths of infra-red radiation is changed
Detected into the shorter visible ray of wavelength, then by silicon photocell or other visible-light detectors, so as to realize infra-red radiation indirectly
Detection.
The inventive method carries out infrared detective, the incident of Si-based photodetectors using Si-based photodetectors
Window is provided with infrared convex lens, and infrared up conversion piece is arranged on the focal point of infrared convex lens, and is hung down with infrared input path
Directly；Background light source and silicon photocell are respectively placed in the both sides of infrared input path, the emitting light path and silicon photocell of background light source
Receiving light path intersect at the focal points of convex lens, the output end of detection galvanometer and silicon photocell is connected；Background light source goes out
It is 30 °~60 ° to penetrate light path incident angle α, and the receiving light path angle of emergence β of silicon photocell is 30 °~60 °, and α ≠ β；
Described infrared input path straight line where the primary optical axis of infrared convex lens；
Described infrared convex lens are zone-melted silicon single crystal material lenticular, can only pass through infrared light；
Described infrared up conversion piece is SrAl2O4:(Eu2+,Dy3+) long after glow luminous material sheet material, or on silicon substrate
Plate SrAl2O4:(Eu2+,Dy3+) long after glow luminous material film；
Described background light source is the light emitting diode that launch wavelength is λ, 350nm≤λ≤450nm；
The emitting light path incident angle α of described background light source is the angle of emitting light path and infrared up conversion piece；
The receiving light path angle of emergence β of described silicon photocell is the angle of receiving light path and infrared up conversion piece.
During detection, background light source and detection galvanometer, mobile Si-based photodetectors, when detection galvanometer display electricity are opened
During stream increase, show in infrared input path with the presence of infra-red radiation.
Further, it is provided with bandpass filter on the receiving light path of described silicon photocell, described bandpass filter
Centre wavelength is 510nm, with a width of 30nm.
In the present invention, background light source transmitting blue light, ultraviolet light or blue violet light, for exciting the electronics in strontium aluminate material,
The electron transition of valence band is set to enter Dy3+The shallow trapping state of formation.In order to avoid the direct transition of electronics enters SrAl2O4:(Eu2+,
Dy3+) conduction band so as to produce powerful background signal, the wavelength of background light source is more than or equal to 350nm.Silicon photocell is used to detect
Light intensity signal, is converted into current signal by the visible ray that strontium aluminate material is launched.In order to avoid light that background light source is sent is anti-
Silicon photocell is directly entered after penetrating, background light source is mutual not in mirror image light path with silicon photocell.Bandpass filter is used to filter out the back of the body
Scape light source is by SrAl2O4:(Eu2+,Dy3+) blue light after scattering enters silicon photocell, the further background electricity of reduction silicon photocell
Stream.
With it is traditional be related to the infrared up conversion method of multiphoton processes compared with, the present invention is using long-afterglow material infrared
The upper transfer process efficiency that radiation is converted into visible ray is very high, it is not necessary to which high power laser, which is excited, to be completed, it is possible to achieve right
The detection of faint infrared radiation signal.
Brief description of the drawings
Fig. 1：Si-based photodetectors structural representation in the inventive method；
Fig. 2：The schematic diagram of the inventive method；
Fig. 3：The increase of luminous intensity caused by the pulse infrared radiation that 980nm near-infrared LEDs are sent；
Fig. 4：The increase of luminous intensity caused by the infra-red radiation that infrared LED is sent in 1750um.
Embodiment
One kind detection infra-red radiation method, infrared detective is carried out using Si-based photodetectors.Silicon based opto-electronicses are detected
The structure of device is as shown in Figure 1.The incident window of Si-based photodetectors is provided with infrared convex lens 1, infrared up conversion piece 2
The focal point of infrared convex lens 1 is arranged on, and it is vertical with infrared input path a.Background light source 3 and silicon photocell 4 are respectively placed in
Infrared input path a both sides, the emitting light path b of the background light source 3 and receiving light path c of silicon photocell 4 intersects at convex lens
Focal point.Detection galvanometer is connected with the output end of silicon photocell 4 and (is not drawn into figure, the connection belongs to mature technology).Background
The emitting light path incident angle α of light source 3 is 30 °~60 °, and the receiving light path angle of emergence β of silicon photocell 4 is 30 °~60 °, and α ≠ β.
Wherein：Infrared convex lens are zone-melted silicon single crystal material lenticular, can only pass through infrared light；Infrared up conversion piece is SrAl2O4:(Eu2 +,Dy3+) long after glow luminous material sheet material, or SrAl is plated on silicon substrate2O4:(Eu2+,Dy3+) long after glow luminous material film；Background
Light source is the light emitting diode that launch wavelength is λ, 350nm≤λ≤450nm.
During detection, background light source and detection galvanometer, mobile Si-based photodetectors, when detection galvanometer display electricity are opened
During stream increase, show in infrared input path with the presence of infra-red radiation.
The light sent in order to avoid background light source is received by silicon photocell produces high background signal, background light source it is luminous
Diode uses commutator pulse pattern, i.e., send pulse at interval of the time, to maintain to have enough electronics to produce twilight sunset in trap.
In the lumination of light emitting diode of background light source, silicon photocell stops return pulse signal；In the light emitting diode of background light source
Not when luminous, silicon photocell return pulse signal.Under the pattern, the signal-to-background ratio of signal is high, is more prone to detect infrared spoke
Penetrate, but in the time that background light source is stopped, it is impossible to complete the detection of infra-red radiation.
This method can be provided with bandpass filter 5, the center of bandpass filter on the receiving light path c of silicon photocell 4
Wavelength is 510nm, with a width of 30nm.Increase after bandpass filter, the light emitting diode of background light source continuously sends pulse, band logical
Optical filter can be with wiping out background light source by SrAl2O4:(Eu2+,Dy3+) blue light after scattering enters silicon photocell, it is possible to achieve even
Continuous detection, but under the pattern relative signal signal-to-background ratio it is low.
The principle of this method is as shown in Fig. 2 into Dy3+The electronics of trap level is relatively stablized at room temperature, but
Transition it can enter SrAl upwards under the irradiation of infrared light2O4:(Eu2+,Dy3+) material conduction band, and pass through Eu2+Energy level is discharged
Visible ray, so as to cause the increase of visible light signal intensity.Silicon photocell is used to detect the visible ray that strontium aluminate material is launched,
Light intensity signal is converted into current signal.
Experimental example 1：
Background light source is that 980nm, power are by wavelength from the ultraviolet leds that wavelength X is that 350nm, power are 50mW
10mW, pulse width is under the infrared light pulse irradiation of 0.3 second, detection galvanometer show electric current increase, such as Fig. 3.As can be seen that
This method can effectively detect 980nm infrared light.
Experimental example 2：
Background light source is that 1750nm, power are by wavelength from the blue violet light LED that wavelength X is that 407nm, power are 80mW
After the continuous mid-infrared light pre-irradiations of 20mW, detection galvanometer shows the change of electric current, such as Fig. 4.As can be seen that this method can have
Effect ground detection 1750nm infrared light.
Experimental example 3：
Background light source is that 1350nm, power are by wavelength from the blue-ray LED that wavelength X is that 450nm, power are 100mW
Under 15mW infrared light pulse irradiation, detection galvanometer shows that electric current substantially increases.
Claims (4)
1. one kind detection infra-red radiation method, this method carries out infrared detective using Si-based photodetectors, its feature exists
In：The incident window of described Si-based photodetectors is provided with infrared convex lens, and infrared up conversion piece is arranged on infrared
The focal point of convex lens, and it is vertical with infrared input path；Background light source and silicon photocell are respectively placed in infrared input path
Both sides, the emitting light path of background light source and the receiving light path of silicon photocell intersect at the focal point of convex lens, detection galvanometer with
The output end connection of silicon photocell；The emitting light path incident angle α of background light source is 30 °~60 °, and the receiving light path of silicon photocell goes out
Firing angle β is 30 °~60 °, and α ≠ β；
Described infrared input path straight line where the primary optical axis of infrared convex lens；
Described infrared convex lens are zone-melted silicon single crystal material lenticular, can only pass through infrared light；
Described infrared up conversion piece is SrAl2O4:(Eu2+,Dy3+) long after glow luminous material sheet material, or on silicon substrate plate
SrAl2O4:(Eu2+,Dy3+) long after glow luminous material film；
Described background light source is the light emitting diode that launch wavelength is λ, 350nm≤λ≤450nm；
The emitting light path incident angle α of described background light source is the angle of emitting light path and infrared up conversion piece；
The receiving light path angle of emergence β of described silicon photocell is the angle of receiving light path and infrared up conversion piece；
During detection, background light source and detection galvanometer, mobile Si-based photodetectors, when detection galvanometer shows that electric current increases are opened
Added-time, show in infrared input path with the presence of infra-red radiation.
2. a kind of detection infra-red radiation method as claimed in claim 1, it is characterised in that：The reception light of described silicon photocell
Bandpass filter is provided with road, the centre wavelength of described bandpass filter is 510nm, with a width of 30nm.
3. a kind of detection infra-red radiation method as claimed in claim 1, it is characterised in that：Luminous the two of described background light source
Pole pipe uses commutator pulse pattern, i.e., send pulse at interval of the time, to maintain to have enough electronics to produce twilight sunset in trap.
4. a kind of detection infra-red radiation method as claimed in claim 2, it is characterised in that：Luminous the two of described background light source
Pole pipe continuously sends pulse in detection process.
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| CN104458003B true CN104458003B (en) | 2017-10-27 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1808730A (en) * | 2005-12-02 | 2006-07-26 | 中国科学院上海技术物理研究所 | Imaging device utilizing In-Ga-N LED for infrared target signal detection |
| CN103756672A (en) * | 2014-02-05 | 2014-04-30 | 上海科润光电技术有限公司 | Green luminous material for detecting infrared laser and preparation |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7008559B2 (en) * | 2001-06-06 | 2006-03-07 | Nomadics, Inc. | Manganese doped upconversion luminescence nanoparticles |
| US8039736B2 (en) * | 2008-08-18 | 2011-10-18 | Andrew Clark | Photovoltaic up conversion and down conversion using rare earths |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1808730A (en) * | 2005-12-02 | 2006-07-26 | 中国科学院上海技术物理研究所 | Imaging device utilizing In-Ga-N LED for infrared target signal detection |
| CN103756672A (en) * | 2014-02-05 | 2014-04-30 | 上海科润光电技术有限公司 | Green luminous material for detecting infrared laser and preparation |
Non-Patent Citations (1)
| Title |
|---|
| SrAl<sub>2</sub>O<sub>4</sub>：Eu2+，Dy3+的上转换发光特性;马云麒;《光谱学与光谱分析》;20030630;第23卷(第3期);第435-437页 * |
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Granted publication date: 20171027 Termination date: 20211124 |