CN1044528C - Thin-film thermosensitive resistance infrared detector - Google Patents
Thin-film thermosensitive resistance infrared detector Download PDFInfo
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- CN1044528C CN1044528C CN 96109613 CN96109613A CN1044528C CN 1044528 C CN1044528 C CN 1044528C CN 96109613 CN96109613 CN 96109613 CN 96109613 A CN96109613 A CN 96109613A CN 1044528 C CN1044528 C CN 1044528C
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Abstract
The present invention relates to a detection device in detection technology. The present invention is composed of a condensing germanium lens, a blocking layer, a diamond-like carbon film dielectric layer, a chromium gold conductive layer, a manganese, nickel and cobalt oxide thin film sensitive layer, an internal lead, a ceramic transition electrode, etc. The components are all realized by an advanced semiconductor technical skill, good and stable consistency and repetitiveness are guaranteed, and the reliability is increased. Because the thickness of the thin films of the sensitive layer and the dielectric layer of the present invention is only in micron dimension, time constants can be obviously reduced, as is a significant breakthrough to the limitation of use of a thermosensitive resistance-type infrared detector because of large time constants; the present invention is favorable for increasing detection speed and expanding application areas.
Description
The present invention relates to a kind of checkout gear in the detection technique.
Infrared detection technique, its application is extremely extensive, not only can be used for also being widely used in civil area in the space technology.The similar patented technology of present existing principle has U.S.'s " immersion type thin slice thermistor bolometer " (US.3,121,208), with domestic " common substrate thermosensitive resistance infrared detector " (CN92206035), its sensitive resistance thin slice of the bolometer of the U.S. sinters into after material mixing being stirred with predetermined ratio with physical method, and his generative process is to put into grinding in ball grinder after the at first oxide premixed according to a certain percentage with the manganese nickel cobalt element to play the effect that stirs with porphyrize.Form the thin layer of tens micron thickness then with hydrostomia method moulding process commonly used in the thick-film technique, put into high temperature furnace after the oven dry and sinter thermistor into spinel structure, after being cut into required size on thin slice two sides cover the gold layer, sensitive area is reserved in the centre.On the gold layer, coat gold paste, at high temperature sinter firm joint into the platinum filament of variable cross-section.After through the electric performance test screening, qualified slice, thin piece is immersed on the germainium lens.The selenium arsenic glass that the process of submergence technology is is 80% selenium, 20% arsenic with the about 10 micron thickness materials of vacuum coating steaming last layer on the germainium lens that plates antireflection layer, the germainium lens that plates the selenium arsenic glass is put into a pot arch, and to be warming up to glass softening, Manufactured qualified slice, thin piece is put into the groove of a pouring weight, heat with the high frequency circle around the groove.After the high frequency circle was the heating of pouring weight and temperature-sensitive thin slice, this moment, pot arch also made the selenium arsenic glass softening, with the formed pressure of the weight of pouring weight, thin slice was pressed in the glass, was pressed into the degree of depth in the glass by the degree of depth decision of pouring weight groove.The method is up to can only being immersed in the responsive thin slice of a slice on the germainium lens at present, and another sheet compensating plate need be placed in outside the germainium lens; And domestic immersion type thin slice thermosensitive resistance infrared detector technology and United States Patent (USP) are not quite similar on technology, on thin sheet preparation technique, it is to adopt the method for chemical synthesis to make moisture pasty slurry, put into then and dry after adhesive fully stirs evenly, porphyrize sieves in mortar, leach to be spread out on the plain film behind the fine powder and pressurize, be pressed into behind the thin slice sintering at high temperature, the plated with gold layer is reserved sensitive area then, on gold layer, be welded on the gold layer and make the thermistor thin slice to be coated with the tin thin copper wire, after through the electrical property screening, qualified is immersed on the germainium lens.Submergence technology is on germainium lens, and what two layers of selenium arsyl material that size is the same in the vacuum evaporation, lower floor and germainium lens joined is the selenium arsenic glass, and the upper strata is the plain glass of selenium pozzuolite thallium quaternary, this two softening point difference, and the softening point of the plain glass of quaternary is about 85 ℃.Then the germainium lens that plates two layers of glass is put into pot arch, operating personnel are by microscope, the temperature-sensitive thin slice is seated in the plain precalculated position on glass of quaternary, when furnace temperature is raised to the plain glass of upper strata quaternary when softening, operating personnel's hand-held one little pen is pressed in the pen hair on the thin slice, make it sagging, the degree of depth of sinking is uncontrollable, also can't measure, full the feel that feels with operating personnel.Though this method is with manual operation, but it is random bigger than American technology, can be immersed in sensitive resistance and compensating resistance simultaneously on the same germainium lens substrate,, so just form patent (CN92206035) " common substrate type thermosensitive resistance infrared detector to obtain preferable temperature-compensating.The common substrate technology has been subjected to illumination simultaneously because sensitive resistance and compensating resistance are immersed in simultaneously on the germainium lens, and compensating plate should not be subjected to illumination, need shelter, and its method is gold or the aluminium lamination that plates one deck energy infrared reflecting on the light path of compensating plate.Though the common substrate immersion technique has advantage in temperature-compensating, owing to need manual operation submergence secondary, thereby unavoidably bring the rate of finished products shortcoming lower than single submergence.
Infrared detection device by above-mentioned two methods preparation all need use large number quipments, and operation is many, technology is loaded down with trivial details, and the thermistor sensitive layer thickness that makes is thicker, and size Control is also difficult.
The objective of the invention is to propose a kind of thin-film thermosensitive resistance infrared detector of mainly forming by germainium lens, barrier layer, dielectric layer, conductive layer, sensitive layer and transition electrode, not only each technological parameter is adjustable controlled in the mill for it, consistency and repeatability have been improved greatly, and the steady quality of product, reliable, thereby solved the existing in prior technology problem.
The technical solution adopted in the present invention is that it mainly is made up of the transition electrode and a shell of optically focused germainium lens, barrier layer, diamond-film-like dielectric layer, chromium gold conductive layer, thin-film thermistor, lead, pottery or other insulating material.Thin-film thermosensitive resistance infrared detector be a kind ofly can in room temperature environment, work, the detector of the infrared energy that just can this target of perception when different temperatures, radiates of contact target object not.When infrared radiation projects on the film sensitive material, cause that the sensitive material temperature raises, the resistance of this material changes thereupon.In the bridge circuit of being made up of a daylighting sensitive resistance and another not daylighting compensating resistance, sensitive resistance causes the bridge circuit imbalance and the output of generation signal because light radiation irradiation back resistance changes, thereby realizes the detection to the emittance or the temperature of target.Since the energy of target emanation a little less than, thereby output signal is also less, as amplifying by circuit merely, though signal has increased, noise also increases thereupon, can not change its signal to noise ratio.Thereby when surveying small-signal, obtain enough big signal to noise ratio and bigger output signal, can only manage to increase the received energy on the sensitive area.Generally be to adopt before the thermistor sensitive area, to increase by an optical system to play the energy that optically focused is used for increasing the sensitive area reception.This detector be adopt hemisphere or super hemisphere can see through infrared germainium lens, increase the effect of energy density to play optically focused, through calculating, added and can obtain tens times optical gain behind the germainium lens.But germanium is semiconductor, and resistivity is little, and the resistance value of manganese nickel cobalt element sull thermistor is generally 10
5-10
6The Ω magnitude can cause short circuit as it directly is plated on the germanium surface, thus between germanium and thin-film thermistor, must need one deck can be infrared thoroughly, the transition zone of very high insulation resistance is arranged, just so-called dielectric layer again.For improving optical gain, also must consider the rational Match of germanium-dielectric layer-sensitive layer three refractive index.The diamond-film-like that we adopt, its refractive index is about 2.Diamond-film-like is a kind of novel thin film that has premium properties at aspects such as physics, chemistry, electricity, machineries, and it is that to adopt vacuum coating technology to be deposited on germainium lens lip-deep.It has good bond strength with germanium, good saturating infrared property, and good electric property is a kind of very suitable dielectric layer.Sensitive layer-the thin-film thermistor of most critical has adopted with the sputter and generating in oxygen atmosphere of manganese nickel cobalt three element alloy target among the present invention.The atomic ratio of the manganese nickel cobalt element in the thin-film thermistor is: manganese accounts for 60 to 80%, and nickel accounts for 14 to 5%, cobalt accounts for 26 to 15%.The physical dimension and the positioning accuracy of the sensitive layer physical dimension of this detector, chromium gold conductive layer all are guaranteed by photoetching process and coating technique.
The invention has the advantages that:
(1) all technologies have all adopted the semiconductor technologies such as vacuum coating, photoetching, hot pressing welding in advanced modern times, and technological parameter is easy to control and adjusts.Technologic consistency, reliability, repeatability are much higher than immersion type.
(2) because the technology of immersion type is numerous and diverse, operation is many, the per pass operation all can be introduced adverse factors, finally influences the quality and the rate of finished products of product.And operation of the present invention is few, and technology is simple.
(3) the submergence technology of immersion type owing to must select low melting material for use, thereby has limited the selection to the dielectric layer material greatly, and the present invention is not owing to there is submergence technology, so the dielectric layer material is had broad, bigger choice.
(4) performance of its dielectric layer of thermosensitive resistance type Infrared Detectors and thickness directly influence every electrical quantity performance of detector, influence repeatability, consistency and the reliability of detector.In above-mentioned domestic and international immersion type detector, the performance of dielectric layer and thickness depend primarily on submergence technology.Domestic, this submergence technology is mainly by manual operation, and the thickness of dielectric layer can't strict be controlled.The technology of the U.S. will be got well than domestic, can arrive required scope to THICKNESS CONTROL basically, but the operation more complicated, nor easily accurately control.Then all exist concomitant shortcoming at the dielectric layer aspect of performance, because of dielectric layer is the selenium arsenic alloy of a certain proportioning, since the evaporating temperature difference of each element, thus in the vacuum evaporation process unavoidably the fractionation phenomenon will take place, cause the graded of dielectric layer component.This phenomenon all is ubiquitous in above-mentioned two kinds of domestic and international submergence technologies, can't overcome.The U.S. becomes the accident analysis of big inefficacy detector to noise in the NASA in 79 years, 80 years report, its conclusion be exactly the detector noise to become big reason be because the fractionation of dielectric layer, the crystallization that forms rich selenium layer on the surface is caused.And there is not the fractionation phenomenon in dielectric layer of the present invention, and the thickness uniformity, can strict control to required thickness, therefore can obviously improve consistency, repeatability and the reliability of detector.
(5) the reliable life of pad.The welding method of the U.S., solder joint is reliable, but technology is numerous and diverse.Domestic is the technology that adopts soldering on thin gold layer, and the shortcoming that this welding method exists is that tin and gold very easily form alloy, ' eats ' golden phenomenon thereby produce the tin that is difficult to overcome, so quality of welding spot is extremely unstable, causes the finished product rate low, the quality instability.And the present invention is the thermocompression bonding technology that adopts in the semiconductor technology, and solder joint is reliable and stable.
(6) the most tangible advantage of the present invention is to be on the time constant in the response time.The major parameter of influence time constant has two: the one, and the thickness of sensitive layer, the i.e. size of its thermal capacitance; Another is the thickness and the thermal conductivity of dielectric layer.For the immersion type detector, because be unable to do without submergence technology, so the choice of its dielectric layer material is limited, up to this point, also have only with selenium arsyl material, still not having other materials can be for selecting for use, and dielectric layer will stand fusing-extruding-steps such as cooling owing to (comprise the U.S. and domestic) in submergence technology, its last thickness that generates is difficult with control, and has obvious stress to produce.Thickness of dielectric layers is directly relevant with time constant, thereby it is difficult to obtain relatively more consistent time constant, and the thickness of dielectric layers among the present invention can be easy to control to required scope, uniformity, consistency are very good, thereby guaranteed the consistency and the repeatability of required time constant, and can adjust on request.The key factor of another influence time constant is self thickness of sensitive layer.The U.S. and domestic sensitive layer thickness are about 10 μ m, and its time constant is a Millisecond.The product of the U.S. can reach 1ms, and domestic restriction owing to technological level, minimum can only reach 2ms.Film thickness among the present invention only is their part, and in theory, time constant should only be their part also, significantly less than the time constant of existing immersion type detector, thereby has improved speed of detection significantly.
(7) thin-film thermosensitive resistance infrared detector provided by the invention, its application is extremely extensive, all can obtain extensive use not only in space technology, and in civil area, and continually develop the application that makes new advances.As can be used for soil, the water surface, the measurement of sea equitemperature as infrared radiation thermometer; The temperature survey of mobile object, article for rotation in the stove; The heating of high-tension circuit joint switch is checked; Meteorological observation etc.As be used for train hot box measurement aspect, because the time constant of detector provided by the invention is little, can satisfies and survey requirement, thereby can guarantee the axle temperature detection needs of bullet train with fair speed target.Equally, because its quick, sensitive characteristics, also can be used as the receiver in the analytical instrument, as in infrared gas analyser as infrared remote receiver, on infrared spectrometer, be used as receiver etc., in instrument and meter industry, can be used as miniature human body temperature perceptron, flowmeter or the like, use extremely extensive.
Fig. 1 is a structural representation of the present invention.
Fig. 2 is a core of the present invention end view.
Fig. 3 is a core of the present invention upward view.
Further specify preferred embodiment of the present invention in conjunction with above-mentioned each accompanying drawing now, as shown in Figure 1 to Figure 3, the present invention is mainly by the optically focused germainium lens 1 of being with antireflection layer, barrier layer 2, diamond-film-like dielectric layer 3, chromium gold conductive layer 4, sensitive layer-manganese nickel cobalt element oxide membranous layer thin- film thermistor 5,6, lead 7, pottery or other insulating material transition electrodes 8, base 9 and shell are formed, wherein, said shell includes clamp nut 10,12, shell 11 and pad 13, the material of high reflectances such as gold or aluminium can be adopted in said barrier layer 2.In order to implement the present invention, at first be the germainium lens that obtains required specification, and plate antireflection layer 1 thereon, on the local location on the germainium lens plane, (promptly arrange compensation thermistor 6 places) and generate barrier layer 2 with vacuum coating technology and photoetching process.On whole germainium lens plane, generate one deck diamond-film-like 3 subsequently, on diamond-film-like, utilize vacuum coating and photoetching process to make chromium gold conductive layer wiring 4 by designing requirement with vacuum coating technology.Then, on germainium lens optical axis center position and side have on the position on barrier layer, utilize vacuum coating technology and photoetching process to generate the thin-film thermistor of two required sizes: one for sensitive resistance 5, be compensating resistance 6.Three end points at chromium gold conductive layer 4 are drawn three thin spun golds 7 with semiconductor heat pressure welding technology, these thin spun golds are welded in respectively on the ceramic transition electrode 8, than heavy gauge wire it is being soldered directly on the pipe leg of detector base 9 in addition on 8 with three, then can be directly and measuring circuit join.
Thin-film thermosensitive resistance infrared detector is the same with the other types thermosensitive resistance infrared detector, need add that all being input to a preamplifier after bias voltage is linked to be bridge circuit amplifies small-signal when using.
Because the thermistor resistance is higher, is placed with higher input impedance before the requirement.In different application, after the signal that has amplified through preamplifier done different processing, just can obtain and measure the corresponding data of characteristics of objects, as be used on the non-contact temperature measuring, be measured as example with the train hot box, train particularly goods train after long-distance operation, for various reasons, a certain axletree temperature of railway car can raise and meet or exceed License Value, as not taking urgent measure at once this joint compartment is thrown away, and the continuation that allows is with whole time train operation, the major accident that " cutting axle " (being off-axis) causes railway to interrupt takes place in this root heating axletree probably, therefore, on all railway lines, all must a pair of axletree bearing temperature monitoring point just be set every tens kilometers places.Thermosensitive resistance infrared detector just is placed in about 1 meter, rail both sides, its detection viewing field has been aimed at axletree through the place, the convergence of the emittance process germainium lens that the axletree temperature is produced concentrates on through dielectric layer and causes resistance variations on the thermistor sensitive thin film, measuring bridge circuit takes place uneven and the signal of telecommunication that output is corresponding with the axletree temperature, just can judge that through signal processing whether tested axletree has surpassed safety value, just can in time report to the police and take the necessary measures.And pass by, this function mainly touches with hand by the workman, just can carry out automatic monitoring after the thermosensitive resistance type Infrared Detectors has been arranged now, and networking control.China railway develops rapidly to the bullet train direction at present, because it is the hot box measurement of train below 140 kilometers that the restriction immersion type thin slice thermosensitive resistance infrared detector of time constant can only be applied in the speed of a motor vehicle, and time constant of the present invention is little, measures applicable to the hot box to the more speed train.And for example in infrared analysis is used, contain gas micro-to be measured or liquid that certain has INFRARED ABSORPTION in the sample room.When the energy of a source of infrared radiation sees through this sample room, infrared energy will weaken because of being absorbed, therefore the energy that is focused on the thermistor also reduces, cause the bridge circuit imbalance and output and the gas to be measured or the relevant signal of telecommunication of strength of fluid content, through after the signal processing, just can draw the content of this gas or liquid.
Claims (1)
1. a thin-film thermosensitive resistance infrared detector is characterized in that it includes: optically focused germainium lens, high infrared reflection barrier layer, diamond-film-like dielectric layer, chromium gold conductive layer, thin-film thermistor, pottery or other insulating material transition electrode, lead and shell; The bridge circuit of forming by a daylighting sensitive resistance and another not daylighting compensating resistance, sensitive resistance is owing to light radiation irradiation back resistance changes, cause the bridge circuit imbalance and produce signal output, said thin-film thermistor is the manganese nickel cobalt element sull thermistor with certain proportion relation that generates with the reactive sputtering technology; Wherein, on the germainium lens of required specification, plate antireflection layer, the barrier layer is made with vacuum coating technology and photoetching process by compensation thermistor place on the germainium lens plane, it is made up of high reflectance materials such as gold or aluminium, on whole germainium lens plane, generate one deck diamond-film-like subsequently with vacuum coating technology, the chromium gold conductive layer wiring that on the diamond like carbon film dielectric layer, utilizes vacuum coating technology and photoetching process to make to design, then, on germainium lens axle center and side have on the position on barrier layer, utilize vacuum coating technology and photoetching process to generate the manganese nickel cobalt ternary system sull thermistor that two required sizes have the certain proportion relation, the ratio of the manganese nickel cobalt in the said thin-film thermistor, generally be that manganese is 60 to 80%, nickel is 14 to 5%, cobalt is 26 to 15%, three end points at chromium gold conductive layer are drawn three thin spun golds with semiconductor heat pressure welding connection technology, it is lead, these thin spun golds are welded in respectively on pottery or other insulating material transition electrode, than heavy gauge wire it are being soldered directly on the pipe leg of detector base with three in addition on the transition electrode again.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 96109613 CN1044528C (en) | 1996-09-05 | 1996-09-05 | Thin-film thermosensitive resistance infrared detector |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 96109613 CN1044528C (en) | 1996-09-05 | 1996-09-05 | Thin-film thermosensitive resistance infrared detector |
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| CN1155076A CN1155076A (en) | 1997-07-23 |
| CN1044528C true CN1044528C (en) | 1999-08-04 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004056262A1 (en) * | 2002-11-22 | 2004-07-08 | Tianjin Sunshine Optics Technologies Co., Ltd. | Apparatus and method for the reproduction of measuring conditions based on the body surface or surface veins and the contacting pressure |
| CN101777424B (en) * | 2010-01-27 | 2011-08-10 | 中国科学院上海技术物理研究所 | Photoetching preparation method of PVDF (Polyvinylidene Fluoride) organic polymer film capacitor |
Families Citing this family (5)
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| FR2910125B1 (en) * | 2006-12-14 | 2013-07-05 | Commissariat Energie Atomique | USE OF IRON MONOXIDE AND SPINAL OXIDE ASSOCIATION AS A SENSITIVE MATERIAL FOR DETECTING INFRARED RADIATION |
| CN102775154B (en) * | 2012-08-01 | 2014-06-04 | 孝感华工高理电子有限公司 | Manufacturing method of negative temperature coefficient ceramic thermistor |
| TWI652131B (en) * | 2017-02-10 | 2019-03-01 | 信昌電子陶瓷股份有限公司 | Method for assembling laminated capacitor by thermal pulse compression |
| CN107192469A (en) * | 2017-06-07 | 2017-09-22 | 昆明理工大学 | A kind of low temperature temperature element based on layered cobalt oxide |
| CN109238475A (en) * | 2018-08-20 | 2019-01-18 | 中国科学院上海技术物理研究所 | There are the manganese cobalt nickel oxygen thermistor detector and method of bent support leg micro-bridge structure |
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1996
- 1996-09-05 CN CN 96109613 patent/CN1044528C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004056262A1 (en) * | 2002-11-22 | 2004-07-08 | Tianjin Sunshine Optics Technologies Co., Ltd. | Apparatus and method for the reproduction of measuring conditions based on the body surface or surface veins and the contacting pressure |
| CN101777424B (en) * | 2010-01-27 | 2011-08-10 | 中国科学院上海技术物理研究所 | Photoetching preparation method of PVDF (Polyvinylidene Fluoride) organic polymer film capacitor |
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| CN1155076A (en) | 1997-07-23 |
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