CN104445048B - There is the microcomputer electric component of symmetric difference electric capacity - Google Patents
There is the microcomputer electric component of symmetric difference electric capacity Download PDFInfo
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- CN104445048B CN104445048B CN201310425232.7A CN201310425232A CN104445048B CN 104445048 B CN104445048 B CN 104445048B CN 201310425232 A CN201310425232 A CN 201310425232A CN 104445048 B CN104445048 B CN 104445048B
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- comparative electrode
- wall extension
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Abstract
The invention provides a kind of microcomputer electric component with symmetric difference electric capacity, comprise: a substrate; Comparative electrode on one; Comparative electrode once; One quality structure, has a top electrode and a bottom electrode, respectively with this on comparative electrode and this lower comparative electrode to form on one capacitance structure and once capacitance structure; Comparative electrode wall extension on one, its upper end connects comparative electrode on this, and lower end is connected with this substrate; And once comparative electrode wall extension, its lower end connects this substrate via this lower comparative electrode; Wherein the upper end of this lower comparative electrode wall extension is not connected with comparative electrode on this, and on this comparative electrode wall extension and on this comparative electrode be intended for this quality structure total surface area and, be intended for this lower comparative electrode wall extension and this lower comparative electrode this quality structure total surface area and, for suitable each other.
Description
Technical field
The present invention relates to a kind of microcomputer electric component, particularly wherein comparative electrode wall extension and once comparative electrode wall extension on one, its total surface area being intended for quality structure is microcomputer electric component suitable each other.
Background technology
Out-of-plane sensor is wherein a kind of form of microcomputer electric component, in order to the movement of sensing perpendicular to plane.With reference to Figure 1A, wherein show the schematic diagram of the micro electronmechanical out-of-plane sensor 10 of a prior art.Micro electronmechanical out-of-plane sensor 10 comprises a seesaw 11, and its fulcrum is P.When micro electronmechanical out-of-plane sensor 10 moves along direction A, seesaw 11 causes because fulcrum P is partial to side swinging.The top electrode E13 being positioned at seesaw 11 and bottom electrode E11, E12 of being positioned at substrate 12 form the capacitor architecture of a difference form (differentialmode), according to the capacitance difference that this structure produces, (capacitance increases, another capacitance reduces), can amount of movement be extrapolated.This prior art needs the structure accurately manufacturing seesaw 11, and therefore technical difficulty is high.
Please refer to Figure 1B, wherein show the schematic diagram of the micro electronmechanical out-of-plane sensor 20 of another prior art.Micro electronmechanical out-of-plane sensor 20 comprises a quality structure 21, is arranged at above substrate 22, is connected to spring by an anchor point P.The top electrode E23 being positioned at quality structure 21 and bottom electrode E21, the E22 be positioned on substrate 22 form variable capacitor structure in the same way.When micro electronmechanical out-of-plane sensor 20 moves along direction A, being changed to of two groups of electric capacity synchronously becomes large or diminishes.This prior art is because of non-differential form structure, and accuracy is lower by the impact of structure for its sensing value.
Please refer to Fig. 1 C, wherein show the disappearance based on Figure 1A, 1B and the generalized section of the micro electronmechanical out-of-plane sensor 30 of another prior art proposed.Micro electronmechanical out-of-plane sensor 30 comprises a quality structure 31, and this quality structure 31 has an a top electrode E32 and bottom electrode E31.Top electrode E32 and upper comparative electrode E34 forms electric capacity structure C top on one and bottom electrode E31 and lower comparative electrode E33 forms capacitance structure Cbot.This prior art is also the capacitor architecture of differential electrode form, and when micro electronmechanical out-of-plane sensor 30 moves along direction A, the capacitance of upper electric capacity structure C top and lower capacitance structure Cbot can inverse change.But except upper and lower electric capacity structure C top, Cbot, the wall extension W between upper comparative electrode E34 and substrate 32 can produce derivative electric capacity C ' with quality structure 31, and this wall extension W also can produce derivative electric capacity C with lower comparative electrode E33 ".Derivative electric capacity C ', C " cause the variation in capacitance value of electric capacity structure C top and lower capacitance structure Cbot, and derivative electric capacity C ', C " deviation effects that causes is unequal, causes sensing poor effect.
In view of this, the present invention, namely for above-mentioned the deficiencies in the prior art, proposes a kind of microcomputer electric component and out-of-plane sensor, its have difference form capacitance structure, variation in capacitance value impact little and be easy to manufacture.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art and defect, a kind of microcomputer electric component with symmetric difference electric capacity is proposed, this microcomputer electric component and out-of-plane sensor, its have difference form capacitance structure, variation in capacitance value impact little and be easy to manufacture.
For reaching above-mentioned purpose, the invention provides a kind of microcomputer electric component with symmetric difference electric capacity, comprising: a substrate; Comparative electrode on one; Comparative electrode once; One quality structure, has a top electrode and a bottom electrode, respectively with this on comparative electrode and this lower comparative electrode to form on one capacitance structure and once capacitance structure; Comparative electrode wall extension on one, its upper end connects comparative electrode on this, and lower end is connected with this substrate; And once comparative electrode wall extension, its lower end connects this substrate via this lower comparative electrode; Wherein the upper end of this lower comparative electrode wall extension is not connected with comparative electrode on this, and on this comparative electrode wall extension and on this comparative electrode be intended for this quality structure total surface area and, be intended for this lower comparative electrode wall extension and this lower comparative electrode this quality structure total surface area and, for suitable each other.
In a preferred embodiment, on this surface area being intended for this quality structure of comparative electrode wall extension and this lower comparative electrode wall extension for being equal to each other.
In a preferred embodiment, this upper and lower comparative electrode wall extension lays respectively at the symmetric position of this quality structure relatively.
In a preferred embodiment, this quality structure is arranged between this upper and lower comparative electrode wall extension, or this upper and lower comparative electrode wall extension is mainly arranged at the inner side of this quality structure.
In a preferred embodiment, this microcomputer electric component has multiple upper comparative electrode wall extension and multiple lower comparative electrode wall extension.
In a preferred embodiment, the plurality of upper comparative electrode wall extension lays respectively at least relative both sides of this quality structure with multiple lower comparative electrode wall extension, and the either side of these both sides had both been provided with comparative electrode wall extension is also provided with lower comparative electrode wall extension.
In a preferred embodiment, on this, comparative electrode wall extension upper end has at least one anchor limit, and connects comparative electrode on this with this anchor limit; This lower comparative electrode wall extension upper end has and extends at least one chimb contour with this anchor limit.
In a preferred embodiment, see it by top view, this microcomputer electric component is provided with multiple anchor limit and chimb, corresponds to each other and is arranged at the relative both sides of this quality structure.
In a preferred embodiment, it is seen by top view, this microcomputer electric component is provided with multiple anchor limit and chimb, be arranged at the both sides that this quality structure is relative, and the anchor limit gross area being positioned at both sides each other quite or the chimb gross area being positioned at both sides each other quite or the gross area of anchor limit and chimb suitable each other.
Illustrate in detail below by specific embodiment, when the effect being easier to understand object of the present invention, technology contents, feature and reach.
Accompanying drawing explanation
Figure 1A, 1B, 1C show the schematic diagram of three kinds of microcomputer electric components of prior art;
Fig. 2 A shows the schematic perspective view of the microcomputer electric component of one embodiment of the invention;
Fig. 2 B shows the perspective cross section schematic diagram according to FF' cutting line in Fig. 2 A;
Fig. 2 C shows the generalized section according to FF' cutting line in Fig. 2 A;
Fig. 3 shows the generalized section of the microcomputer electric component of another embodiment of the present invention;
Fig. 4 shows the schematic top plan view that the anchor limit of one embodiment of the invention and chimb arrange;
Fig. 5 shows the schematic top plan view that the anchor limit of another embodiment of the present invention and chimb arrange.
Symbol description in figure
10,20,30,40,50 micro-electro-mechanical sensors
11 seesaws
12,22,32,42,52 substrates
21,31,41,51 quality structures
A moving direction
An anchor limit
The upper capacitance structure of Ctop
Capacitance structure under Cbot
C ', C ", the derivative electric capacity of Ctop ', Cbot '
Ex chimb
P fulcrum
E11, E12, E21, E22, E31, E41, E51 bottom electrode
E13, E23, E32, E42, E52 top electrode
Comparative electrode under E33, E43, E53
The upper comparative electrode of E34, E44, E54
FF' cutting line
Dividing wall outside SW
Comparative electrode wall extension under Wb
The upper comparative electrode wall extension of Wt
W wall extension
Detailed description of the invention
Aforementioned and other technology contents, feature and effect for the present invention, in the detailed description of following cooperation with reference to a graphic preferred embodiment, can clearly present.The direction term mentioned in following examples such as: upper and lower, left and right, front or rear etc., is only the direction with reference to annexed drawings.Graphic in the present invention all belongs to signal, is mainly intended to represent the function relation between each device and each element, as shape, thickness and width then not according to scale.
With reference to Fig. 2 A, 2B, 2C, the schematic perspective view of a kind of microcomputer electric component 40 wherein provided for one embodiment of the invention, perspective cross section schematic diagram and generalized section, Fig. 2 B is the generalized section according to FF ' hatching in Fig. 2 A.Microcomputer electric component 40 to comprise on a quality structure 41, comparative electrode wall extension Wt on comparative electrode E44, once comparative electrode E43, and once comparative electrode wall extension Wb.Quality structure 41 has an a top electrode E42 and bottom electrode E41, and upper/lower electrode E42, E41 to form on one electric capacity structure C top and once capacitance structure Cbot respectively with upper comparative electrode E44 and lower comparative electrode E43.Upper comparative electrode wall extension Wt upper end has at least one anchor limit An to connect upper comparative electrode E44, and lower end is connected with a substrate 42.The lower end of lower comparative electrode wall extension Wb is connected to substrate 42 via lower comparative electrode E43, and upper end has and extends at least one chimb Ex contour with anchor limit An; The upper end of comparative electrode wall extension Wb is wherein descended not to be connected with upper comparative electrode E44, and upper comparative electrode wall extension Wt and upper comparative electrode E44 be intended for quality structure 41 total current-carrying part surface area and, with lower comparative electrode wall extension Wb and lower comparative electrode E43 be intended for quality structure 41 total current-carrying part surface area and, for each other quite (roughly equal but allow 10% gap, better within 5%).The above " is intended for the current-carrying part surface area of quality structure 41 " and means " can with the surface area of quality structure 41 effective constitution electric capacity ".Because total surface area is suitable each other, and the upper end of lower comparative electrode wall extension Wb is not connected with top electrode E42, therefore quality structure 41 formed with upper and lower comparative electrode wall extension Wt, Wb respectively derivative electric capacity Ctop ', Cbot ' capacitance suitable.In other words, the problem causing sensing value deviation in prior art because derivative electric capacity is unequal can be solved.In one embodiment, the total surface area being intended for quality structure of upper comparative electrode wall extension and lower comparative electrode wall extension is for being equal to each other.Upper comparative electrode wall extension and lower comparative electrode wall extension can be respectively single or multiple; Upper and lower comparative electrode wall extension should lay respectively at the symmetric position of this quality structure relatively, such as relative both sides, but this is nonessential, only needs to make the capacitance of differential capacitance suitable each other, even if also the impact that causes of derivative electric capacity Ctop ', Cbot ' is suitable each other.
When microcomputer electric component 40 moves along moving direction A, upper electric capacity structure C top and lower capacitance structure Cbot forms the capacitor architecture of a difference form (differentialmode), namely when in the middle of, a capacitance increases, another capacitance reduces, and can carry out the sensing to movement according to this change.
Electrode E41 and electrode E42 can be designed to same potential or different potentials, all belongs to feasible, only needs to make electric capacity structure C top and lower capacitance structure Cbot form differential capacitance framework.
In one embodiment, microcomputer electric component 40 can utilize the stacking manufacture of CMOS processing procedure, and Fig. 2 A, 2B, 2C also illustrate for CMOS processing procedure, wherein, the dark-grey chromatograph of bottom is the dielectric layer (depending on electrically design and the position of section in layout) on contact layer (contactlayer) in CMOS processing procedure or coordination rank, other dark-grey chromatograph is the dielectric layer (depending on electrically designing and the position of section in layout) on channel layer (vialayer) in CMOS processing procedure or coordination rank, white portion is metal level (metallayer).The making of right microcomputer electric component 40 is not limited to CMOS processing procedure, and microcomputer electric component 40 also available bases processing procedure makes, and this is prior art, does not describe in detail in this.
Outside dividing wall SW shown in Fig. 2 A, 2B is other element in order to isolate on microcomputer electric component 40 and substrate 42; If do not need to isolate, then outside dividing wall SW can omit.
Must pay special attention to, upper and lower nothing directly electric connection between comparative electrode wall extension Wt, Wb.
In the embodiment of Fig. 2 A-2C, quality structure 41 is arranged at upper and lower between comparative electrode wall extension Wt, Wb.Fig. 3 shows the microcomputer electric component 50 of another embodiment of the present invention, and wherein quality structure 51 is arranged at the outside of upper and lower comparative electrode wall extension Wt, Wb, and this situation can be suitable for the present invention too.
In detail, please refer to Fig. 3, the major part of upper and lower comparative electrode wall extension Wt, Wb is arranged at the inner side (it is outside that upper and lower comparative electrode wall extension Wt, Wb may have small part to be positioned at quality structure 51) of quality structure 51, and quality structure 51 is removable outside upper and lower comparative electrode wall extension Wt, Wb.Quality structure 51 has an a top electrode E52 and bottom electrode E51, and upper/lower electrode E52, E51 respectively with one on comparative electrode E54 and once comparative electrode E53 to form on one electric capacity structure C top and once capacitance structure Cbot.Upper comparative electrode wall extension Wt has at least one anchor limit An to connect upper comparative electrode E54, and opposite side is connected with a substrate 52.Lower comparative electrode wall extension Wb is connected to substrate 52 via lower comparative electrode E53 and has and extends at least one chimb Ex contour with anchor limit An, the upper end of comparative electrode wall extension Wb is wherein descended not to be connected with upper comparative electrode E54, and upper comparative electrode wall extension Wt and upper comparative electrode E54 be intended for quality structure 51 total current-carrying part surface area and, with lower comparative electrode wall extension Wb and lower comparative electrode E53 be intended for quality structure 51 total current-carrying part surface area and, for suitable each other, in other words, upper electric capacity structure C top adds that the capacitance summation of derivative electric capacity Ctop ' and lower capacitance structure Cbot add that the capacitance summation of derivative electric capacity Cbot ' is suitable, the problem causing sensing value deviation in prior art because derivative electric capacity is unequal can be solved.Electrode E51 and electrode E52 can be designed to same potential or different potentials, all belongs to feasible, only needs to make electric capacity structure C top and lower capacitance structure Cbot form differential capacitance framework.All the other technology contents can refer to the explanation of front embodiment, do not describe in detail in this.
For making capacitance sensing, there is better effect, upper and lower comparative electrode wall extension Wt, Wb can be multiple, such as can consult Fig. 2 B, wherein show multiple upper comparative electrode wall extension Wt and multiple lower comparative electrode wall extension Wb, and comparative electrode wall extension Wt is also provided with lower comparative electrode wall extension Wb(but certainly on the same side of quality structure 41 had both been provided with, as the same side at quality structure 41 be only provided with upper and lower comparative electrode wall extension Wt, Wb one of them and up and down comparative electrode wall extension Wt, Wb be single, also belong to feasible).In the present embodiment, comparative electrode wall extension Wt and lower comparative electrode wall extension Wb on the both sides of quality structure 41 are all provided with, in the case, refer to the top view of Fig. 4, in better enforcement kenel, anchor limit An and chimb Ex can (corresponding be arranged at relative both sides) positioned opposite to each other, and the anchor limit An gross area being arranged in both sides each other quite (area of the single anchor limit An in figure top with the area of anchor limit, below two An and suitable), the chimb Ex gross area being positioned at both sides is suitable each other, (in figure the top area of two chimb Ex and suitable with the area of below single chimb Ex), and the gross area of anchor limit An and chimb Ex each other quite the area and with the area of three chimb Ex and quite of three anchor limit An (in the figure).Certainly, above is only better embodiment, and enforcement of the present invention is not limited thereto, and does not need to meet above all conditions.
For example, please refer to Fig. 5, wherein show another embodiment that anchor limit An and chimb Ex arranges, wherein anchor limit An and chimb Ex is not positioned opposite to each other.If necessary, also can to make separate arrangements the arrangement mode of other anchor limit An and chimb Ex and position or design the area of anchor limit An and chimb Ex by different way.In a word, of the present inventionly focus on making the capacitance of differential capacitance suitable each other, even if also the impact that causes of derivative electric capacity Ctop ', Cbot ' is suitable each other.Anchor limit An and chimb Ex arrangement are only better embodiment but nonessential.
Below for preferred embodiment, the present invention is described, just the above, be only and make those skilled in the art be easy to understand content of the present invention, be not used for limiting interest field of the present invention.For those skilled in the art, when in spirit of the present invention, can thinking immediately and various equivalence change.For example, upper and lower comparative electrode wall extension Wt, Wb are not limited to only arrange the both sides being quality structure 41, can also be arranged on its four direction, etc., and anchor limit and chimb can be arranged accordingly.Again for example, same upper comparative electrode wall extension Wt can have multiple anchor limit An, and same lower comparative electrode wall extension Wb can have multiple chimb Ex again.In addition, the present invention is not limited to and is applied in out-of-plane sensor, also can be applicable to the sensor of other form.Therefore allly change according to concept of the present invention with spirit institute is impartial for it or modifies, all should be included in right of the present invention.
Claims (9)
1. there is a microcomputer electric component for symmetric difference electric capacity, it is characterized in that, comprise:
One substrate;
Comparative electrode on one;
Comparative electrode once;
One quality structure, has a top electrode and a bottom electrode, respectively with this on comparative electrode and this lower comparative electrode to form on one capacitance structure and once capacitance structure;
Comparative electrode wall extension on one, its upper end connects comparative electrode on this, and lower end is connected with this substrate; And
Comparative electrode wall extension once, its lower end connects this substrate via this lower comparative electrode;
Wherein the upper end of this lower comparative electrode wall extension is not connected with comparative electrode on this, and on this comparative electrode wall extension and on this comparative electrode be intended for this quality structure total current-carrying part surface area and, be intended for this lower comparative electrode wall extension and this lower comparative electrode this quality structure total current-carrying part surface area and, for suitable each other.
2. have the microcomputer electric component of symmetric difference electric capacity as claimed in claim 1, wherein, on this, the surface area being intended for this quality structure of comparative electrode wall extension and this lower comparative electrode wall extension is for being equal to each other.
3. microcomputer electric component as claimed in claim 1, wherein, this upper and lower comparative electrode wall extension lays respectively at the symmetric position of this quality structure relatively.
4. have the microcomputer electric component of symmetric difference electric capacity as claimed in claim 1, wherein, this quality structure is arranged between this upper and lower comparative electrode wall extension, or this upper and lower comparative electrode wall extension is mainly arranged at the inner side of this quality structure.
5. have the microcomputer electric component of symmetric difference electric capacity as claimed in claim 1, wherein, this microcomputer electric component has multiple upper comparative electrode wall extension and multiple lower comparative electrode wall extension.
6. there is the microcomputer electric component of symmetric difference electric capacity as claimed in claim 5, wherein, the plurality of upper comparative electrode wall extension lays respectively at least relative both sides of this quality structure with multiple lower comparative electrode wall extension, and the either side of these both sides had both been provided with comparative electrode wall extension is also provided with lower comparative electrode wall extension.
7. have the microcomputer electric component of symmetric difference electric capacity as claimed in claim 1, wherein, on this, comparative electrode wall extension upper end has at least one anchor limit, and connects comparative electrode on this with this anchor limit; This lower comparative electrode wall extension upper end has and extends at least one chimb contour with this anchor limit.
8. have the microcomputer electric component of symmetric difference electric capacity as claimed in claim 7, wherein, see it by top view, this microcomputer electric component is provided with multiple anchor limit and chimb, corresponds to each other and is arranged at the relative both sides of this quality structure.
9. there is the microcomputer electric component of symmetric difference electric capacity as claimed in claim 7, wherein, it is seen by top view, this microcomputer electric component is provided with multiple anchor limit and chimb, be arranged at the both sides that this quality structure is relative, and the anchor limit gross area being positioned at both sides each other quite or the chimb gross area being positioned at both sides each other quite or the gross area of anchor limit and chimb suitable each other.
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| CN201310425232.7A CN104445048B (en) | 2013-09-17 | 2013-09-17 | There is the microcomputer electric component of symmetric difference electric capacity |
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