CN104425724A - Organic electroluminescent device and preparation method thereof - Google Patents

Organic electroluminescent device and preparation method thereof Download PDF

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Publication number
CN104425724A
CN104425724A CN201310370272.6A CN201310370272A CN104425724A CN 104425724 A CN104425724 A CN 104425724A CN 201310370272 A CN201310370272 A CN 201310370272A CN 104425724 A CN104425724 A CN 104425724A
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layer
organic electroluminescence
electroluminescence device
oxide
preparation
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周明杰
黄辉
钟铁涛
王平
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

An organic electroluminescent device includes a glass substrate, an anode, a scattering layer, a hole injection layer, a hole transport layer, a luminous layer, an electron transport layer, an electron injection layer and a cathode which are stacked in sequence. The material of the scattering layer includes titanium dioxide, passivation material and zinc, the passivation material is selected from at least one of silicon dioxide, aluminum oxide, nickel oxide and copper oxide, and the mass ratio of the titanium dioxide, the passivation material and the zinc is 10:3:1 to 20:8:1. The light extraction efficiency of the abovementioned organic electroluminescent device is relatively high. The invention also provides a preparation method of the organic electroluminescent device.

Description

Organic electroluminescence device and preparation method thereof
Technical field
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Under the principle of luminosity of organic electroluminescence device is based on the effect of extra electric field, electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Meet at luminescent layer in electronics and hole, compound, formation exciton, and exciton moves under electric field action, and by energy transferring to luminescent material, and excitation electron is from ground state transition to excitation state, and excited energy, by Radiation-induced deactivation, produces photon, release luminous energy.It is lower that traditional organic electroluminescence device goes out optical property.
Summary of the invention
Based on this, be necessary to provide organic electroluminescence device that a kind of light extraction efficiency is higher and preparation method thereof.
A kind of organic electroluminescence device, comprise the substrate of glass, anode, scattering layer, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the negative electrode that stack gradually, the material of described scattering layer comprises titanium dioxide, passivating material and zinc, described passivating material is selected from least one in silicon dioxide, aluminium oxide, nickel oxide and cupric oxide, and the mass ratio of described titanium dioxide, passivating material and zinc is 10:3:1 ~ 20:8:1.
Wherein in an embodiment, the thickness of described scattering layer is 50nm ~ 300nm.
Wherein in an embodiment, the material of described luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9, at least one in 10-bis--β-naphthylene anthracene, 4,4'-two (9-ethyl-3-carbazole vinyl)-1,1'-biphenyl and oxine aluminium.
Wherein in an embodiment, the refractive index of described substrate of glass is 1.8 ~ 2.2, in 400nm transmitance higher than 90%.
Wherein in an embodiment, the material of described anode is indium tin oxide, aluminium zinc oxide or indium-zinc oxide.
A preparation method for organic electroluminescence device, comprises the following steps:
Anode is prepared at glass basic surface;
Scattering layer is prepared at described anode surface, the material of described scattering layer comprises titanium dioxide, passivating material and zinc, described passivating material is selected from least one in silicon dioxide, aluminium oxide, nickel oxide and cupric oxide, and the mass ratio of described titanium dioxide, passivating material and zinc is 10:3:1 ~ 20:8:1; And
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode is prepared successively on the surface of described scattering layer.
Wherein in an embodiment, the thickness of described scattering layer is 50nm ~ 300nm.
Wherein in an embodiment, the material of described luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9, at least one in 10-bis--β-naphthylene anthracene, 4,4'-two (9-ethyl-3-carbazole vinyl)-1,1'-biphenyl and oxine aluminium.
Wherein in an embodiment, described scattering layer is prepared by electron beam evaporation plating, and the energy density of electron beam evaporation plating is 10 ~ 100W/cm 2.
Wherein in an embodiment, described substrate of glass is placed in isopropyl alcohol and soaks 12 hours ~ 24 hours after using distilled water, alcohol flushing clean before preparing anode.
Above-mentioned organic electroluminescence device and preparation method thereof, scattering layer is prepared on the surface of anode, scattering layer is by titanium dioxide, passivating material and zinc powder composition, titanium dioxide specific area is large, porosity is high, light generation scattering can be made, the light launched to both sides is made to get back to centre, energy gap is narrower simultaneously, be applicable to the transmission in hole, improve hole transport speed, passivating material can improve the stability of scattering layer, zinc powder stability is high, particle diameter is larger simultaneously, can further improve the specific area of the nano particle of scattering layer, strengthen the scattering of light, thus the light extraction efficiency of organic electroluminescence device is higher.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device of an execution mode;
Fig. 2 is the flow chart of the preparation method of the organic electroluminescence device of an execution mode;
Fig. 3 is brightness and the luminous efficiency graph of a relation of organic electroluminescence device prepared by embodiment 1.
Embodiment
Below in conjunction with the drawings and specific embodiments, organic electroluminescence device and preparation method thereof is illustrated further.
Refer to Fig. 1, the organic electroluminescence device 100 of an execution mode comprises the substrate of glass 10, anode 20, scattering layer 30, hole injection layer 40, hole transmission layer 50, luminescent layer 60, electron transfer layer 70, electron injecting layer 80 and the negative electrode 90 that stack gradually.
Substrate of glass 10 for refractive index be the glass of 1.8 ~ 2.2, in 400nm transmitance higher than 90%.Substrate of glass 10 is preferably the glass that the trade mark is N-LAF36, N-LASF31A, N-LASF41A or N-LASF44.
Anode 20 is formed at a side surface of substrate of glass 10.The material of anode 20 is indium tin oxide (ITO), aluminium zinc oxide (AZO) or indium-zinc oxide (IZO), is preferably ITO.The thickness of anode 20 is 80nm ~ 300nm, is preferably 120nm.
Scattering layer 30 is formed at the surface of anode 20.The material of scattering layer 30 comprises titanium dioxide, passivating material and zinc.The mass ratio of titanium dioxide, passivating material and zinc is 10:3:1 ~ 20:8:1.Passivating material is selected from silicon dioxide (SiO 2), aluminium oxide (Al 2o 3), at least one in nickel oxide (NiO) and cupric oxide (CuO).The thickness of scattering layer 30 is 50nm ~ 300nm.
Hole injection layer 40 is formed at the surface of scattering layer 30.The material of hole injection layer 40 is selected from molybdenum trioxide (MoO 3), tungstic acid (WO 3) and vanadic oxide (V 2o 5) at least one, be preferably WO 3.The thickness of hole injection layer 40 is 20nm ~ 80nm, is preferably 25nm.
Hole transmission layer 50 is formed at the surface of hole injection layer 40.The material of hole transmission layer 50 is selected from 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine (NPB), is preferably NPB.The thickness of hole transmission layer 50 is 20nm ~ 60nm, is preferably 35nm.
Luminescent layer 60 is formed at the surface of hole transmission layer 50.The material of luminescent layer 60 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (9-ethyl-3-carbazole vinyl)-1, the 1'-biphenyl (BCzVBi) of 4'-and oxine aluminium (Alq 3) at least one, be preferably BCzVBi.The thickness of luminescent layer 60 is 5nm ~ 40nm, is preferably 32nm.
Electron transfer layer 70 is formed at the surface of luminescent layer 60.The material of electron transfer layer 70 is selected from least one in 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TAZ.The thickness of electron transfer layer 70 is 40nm ~ 250nm, is preferably 130nm.
Electron injecting layer 80 is formed at the surface of electron transfer layer 70.The material of electron injecting layer 80 is selected from cesium carbonate (Cs 2cO 3), cesium fluoride (CsF), nitrine caesium (CsN 3) and lithium fluoride (LiF) at least one, be preferably CsF.The thickness of electron injecting layer 80 is 0.5nm ~ 10nm, is preferably 3nm.
Negative electrode 90 is formed at the surface of electron injecting layer 80.The material of negative electrode 90 is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), is preferably Ag.The thickness of negative electrode 90 is 80nm ~ 250nm, is preferably 150nm.
Above-mentioned organic electroluminescence device 100, scattering layer 30 is prepared on the surface of anode 20, scattering layer 30 is by titanium dioxide, passivating material and zinc powder composition, titanium dioxide specific area is large, porosity is high, light generation scattering can be made, the light launched to both sides is made to get back to centre, energy gap is narrower simultaneously, be applicable to the transmission in hole, improve hole transport speed, passivating material can improve the stability of scattering layer, zinc powder stability is high, particle diameter is larger simultaneously, can further improve the specific area of the nano particle of scattering layer, strengthen the scattering of light, thus the light extraction efficiency of organic electroluminescence device is higher.
Be appreciated that in this organic electroluminescence device 100 and also can other functional layers be set as required.
Please refer to Fig. 2, the preparation method of the organic electroluminescence device 100 of an embodiment, it comprises the following steps:
Step S110, at substrate of glass 10 surface anode 20.
Substrate of glass 10 for refractive index be the glass of 1.8 ~ 2.2, in 400nm transmitance higher than 90%.Substrate of glass 10 is preferably the glass that the trade mark is N-LAF36, N-LASF31A, N-LASF41A or N-LASF44.
Anode 20 is formed at a side surface of substrate of glass 10.The material of anode 20 is indium tin oxide (ITO), aluminium zinc oxide (AZO) or indium-zinc oxide (IZO), is preferably ITO.The thickness of anode 20 is 80nm ~ 300nm, is preferably 120nm.Anode 20 adopts magnetron sputtering to prepare.The accelerating voltage of magnetron sputtering is 300 ~ 800V, and magnetic field is 50 ~ 200G, and power density is 1 ~ 40W/cm 2.
In present embodiment, substrate of glass 10 is placed in isopropyl alcohol and soaks 12 hours ~ 24 hours after using distilled water, alcohol flushing clean before use.
Step S120, prepare scattering layer 30 on anode 20 surface.
The material of scattering layer 30 comprises titanium dioxide, passivating material and zinc.The mass ratio of titanium dioxide, passivating material and zinc is 10:3:1 ~ 20:8:1.Passivating material is selected from silicon dioxide (SiO 2), aluminium oxide (Al 2o 3), at least one in nickel oxide (NiO) and cupric oxide (CuO).The thickness of scattering layer 30 is 50nm ~ 300nm.
Scattering layer 30 is prepared by electron beam evaporation plating.The operating pressure of preparation is 2 × 10 -3~ 5 × 10 -5pa, the energy density of electron beam evaporation plating is 10 ~ 100W/cm 2.
Step S130, the surface of scattering layer 30 successively evaporation formed hole injection layer 40, hole transmission layer 50, luminescent layer 60, electron transfer layer 70, electron injecting layer 80 and negative electrode 90.
Hole injection layer 40 is formed at the surface of scattering layer 30.The material of hole injection layer 40 is selected from molybdenum trioxide (MoO 3), tungstic acid (WO 3) and vanadic oxide (V 2o 5) at least one, be preferably WO 3.The thickness of hole injection layer 40 is 20nm ~ 80nm, is preferably 25nm.Evaporation is 2 × 10 at vacuum pressure -3pa ~ 5 × 10 -5carry out under Pa, evaporation rate is 1nm/s ~ 10nm/s.
Hole transmission layer 50 is formed at the surface of hole injection layer 40.The material of hole transmission layer 50 is selected from 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine (NPB), is preferably NPB.The thickness of hole transmission layer 50 is 20nm ~ 60nm, is preferably 35nm.Evaporation is 2 × 10 at vacuum pressure -3pa ~ 5 × 10 -5carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Luminescent layer 60 is formed at the surface of hole transmission layer 50.The material of luminescent layer 60 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (9-ethyl-3-carbazole vinyl)-1, the 1'-biphenyl (BCzVBi) of 4'-and oxine aluminium (Alq 3) at least one, be preferably BCzVBi.The thickness of luminescent layer 60 is 5nm ~ 40nm, is preferably 32nm.Evaporation is 2 × 10 at vacuum pressure -3pa ~ 5 × 10 -5carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Electron transfer layer 70 is formed at the surface of luminescent layer 60.The material of electron transfer layer 70 is selected from least one in 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TAZ.The thickness of electron transfer layer 70 is 40nm ~ 250nm, is preferably 130nm.Evaporation is 2 × 10 at vacuum pressure -3pa ~ 5 × 10 -5carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Electron injecting layer 80 is formed at the surface of electron transfer layer 70.The material of electron injecting layer 80 is selected from cesium carbonate (Cs 2cO 3), cesium fluoride (CsF), nitrine caesium (CsN 3) and lithium fluoride (LiF) at least one, be preferably CsF.The thickness of electron injecting layer 80 is 0.5nm ~ 10nm, is preferably 3nm.Evaporation is 2 × 10 at vacuum pressure -3pa ~ 5 × 10 -5carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Negative electrode 90 is formed at the surface of electron injecting layer 80.The material of negative electrode 90 is selected from least one in silver (Ag), aluminium (Al), platinum (Pt) and gold (Au), is preferably Ag.The thickness of negative electrode 90 is 80nm ~ 250nm, is preferably 150nm.Evaporation is 2 × 10 at vacuum pressure -3pa ~ 5 × 10 -5carry out under Pa, evaporation rate is 1nm/s ~ 10nm/s.
Above-mentioned organic electroluminescence device preparation method, preparation technology is simple; The light extraction efficiency of the organic electroluminescence device of preparation is higher.
Below in conjunction with specific embodiment, the preparation method to organic electroluminescence device is described in detail.
The embodiment of the present invention and the preparation used by comparative example and tester are: high vacuum coating system (scientific instrument development center, Shenyang Co., Ltd), the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the Keithley2400 of Keithley company of the U.S. tests electric property, the CS-100A colorimeter test brightness of Japanese Konica Minolta company and colourity.
Embodiment 1
It is glass/ITO/TiO that the present embodiment prepares structure 2: Al 2o 3: Zn/WO 3the organic electroluminescence device of/NPB/BCzVBi/TAZ/CsF/Ag.
Substrate of glass is N-LASF44, after substrate of glass distilled water, alcohol flushing is clean, be placed in isopropyl alcohol and soak an evening.Magnetron sputtering anode on the glass substrate, material is ITO, and thickness is 120nm; Prepare scattering layer at anode surface, the material of scattering layer comprises TiO 2, Al 2o 3and Zn, TiO 2particle diameter is the purity of 50nm, Zn is 99.9%, TiO 2with Al 2o 3and the mass ratio of Zn is 12:4:1, adopt electron beam evaporation plating, thickness is 100nm.The energy density of electron beam evaporation plating is 70W/cm 2; Evaporation prepares hole injection layer, and material is WO 3, thickness is 25nm; Evaporation prepares hole transmission layer: material is NPB, and thickness is 35nm; Evaporation prepares luminescent layer: selected materials is BCzVBi, and thickness is 32nm; Evaporation prepares electron transfer layer, and material is TAZ, and thickness is 130nm; Evaporation prepares electron injecting layer, material is CsF, and thickness is 3nm; Evaporation prepares negative electrode, and material is Ag, and thickness is 150nm; Finally obtain required electroluminescent device.The operating pressure of preparation is 8 × 10 -4pa, the evaporation rate of organic material is 0.2nm/s, and the evaporation rate of metallic compound is 3nm/s, and the evaporation rate of metal is 2nm/s.The accelerating voltage of magnetron sputtering: 700V, magnetic field about: 120G, power density: 250W/cm 2.
Refer to Fig. 3, the structure being depicted as preparation in embodiment 1 is glass/ITO/TiO 2: Al 2o 3: Zn/WO 3structure prepared by organic electroluminescence device (curve 1) and the comparative example of/NPB/BCzVBi/TAZ/CsF/Ag is glass/ITO/WO 3the luminous efficiency of organic electroluminescence device (curve 2) of/NPB/BCzVBi/TAZ/CsF/Ag and the relation of brightness.Comparative example prepare the step of organic electroluminescence device and each layer thickness all identical with embodiment 1.
Can see from figure, at different brightnesses, the luminous efficiency of embodiment 1 is all larger than comparative example, the maximum lumen efficiency of embodiment 1 is 6.8lm/W, and comparative example be only 5.3lm/W, and the luminous efficiency of comparative example declines fast along with the increase of brightness, this explanation, scattering layer of the present invention, can make light generation scattering, improves hole transport speed, improve the stability of doped layer, the specific area of further raising rete nano particle, strengthens the scattering of light, the final light extraction efficiency improving organic electroluminescence device.
The luminous efficiency of organic electroluminescence device prepared of each embodiment is all similar with embodiment 1 below, and each organic electroluminescence device also has similar luminous efficiency, repeats no more below.
Embodiment 2
It is substrate of glass/IZO/TiO that the present embodiment prepares structure 2: SiO 2: Zn/V 2o 5/ TCTA/ADN/TPBi/CsN 3the organic electroluminescence device of/Pt.
Glass of high refractive index is N-LAF36, after glass distilled water, alcohol flushing is clean, be placed in isopropyl alcohol and soak an evening.Anode film is prepared in glass of high refractive index substrate, and material is IZO, and thickness is 80nm.Then prepare scattering layer, material comprises TiO 2, SiO 2and Zn, TiO 2particle diameter is the purity of 20nm, Zn is 99.9%, TiO 2with SiO 2and the mass ratio of Zn is 10:3:1, adopt electron beam evaporation plating, thickness is 300nm, and the energy density of electron beam evaporation plating is 10W/cm 2.Evaporation hole injection layer: material is V 2o 5, thickness is 40nm; Evaporation hole transmission layer: material is TCTA, thickness is 45nm; Evaporation luminescent layer: selected materials is ADN, thickness is 8nm; Evaporation electron transfer layer, material is TPBi, and thickness is 65nm; Evaporation electron injecting layer, material are CsN 3, thickness is 10nm.Evaporation negative electrode, material is Pt, and thickness is 80nm; Finally obtain required electroluminescent device.The operating pressure of preparation is 2 × 10 -3pa, the evaporation rate of organic material is 1nm/s, and the evaporation rate of metallic cathode is 10nm/s, and the evaporation rate of metallic compound is 1nm/s.The accelerating voltage of magnetron sputtering: 300V, magnetic field about: 50G, power density: 40W/cm 2.
Embodiment 3
It is substrate of glass/AZO/TiO that the present embodiment prepares structure 2: NiO:Zn/WO 3/ TAPC/Alq 3/ Bphen/Cs 2cO 3the organic electroluminescence device of/Al.
Glass of high refractive index is N-LASF31A, after glass distilled water, alcohol flushing is clean, be placed in isopropyl alcohol and soak an evening.Anode film is prepared in glass of high refractive index substrate, and material is AZO, and thickness is 300nm.Then prepare scattering layer, material comprises TiO 2, NiO and Zn, TiO 2particle diameter is the purity of 200nm, Zn is 99.9%, TiO 2be 20:8:1 with the mass ratio of NiO and Zn, adopt electron beam evaporation plating, thickness is 50nm, and the energy density of electron beam evaporation plating is 100W/cm 2.Evaporation hole injection layer: material is WO 3, thickness is 20nm; Evaporation hole transmission layer: material is TAPC, thickness is 60nm; Evaporation luminescent layer: selected materials is Alq 3, thickness is 40nm; Evaporation electron transfer layer, material is Bphen, and thickness is 200nm; Evaporation electron injecting layer, material are Cs 2cO 3, thickness is 0.5nm.Evaporation negative electrode, material is Al, and thickness is 100nm; Finally obtain required electroluminescent device.The operating pressure of preparation is 5 × 10 -5pa, the evaporation rate of organic material is 0.1nm/s, and the evaporation rate of metallic cathode is 1nm/s, and the evaporation rate of metallic compound is 10nm/s.The accelerating voltage of magnetron sputtering: 800V, magnetic field about: 200G, power density: 1W/cm 2.
Embodiment 4
It is substrate of glass/ITO/TiO that the present embodiment prepares structure 2: CuO:Zn/MoO 3the organic electroluminescence device of/TCTA/DCJTB/TAZ/LiF/Au.
Glass of high refractive index is N-LASF41A, after glass distilled water, alcohol flushing is clean, be placed in isopropyl alcohol and soak an evening.Anode film is prepared in glass of high refractive index substrate, and material is ITO, and thickness is 180nm.Then prepare scattering layer, material comprises TiO 2, CuO and Zn, TiO 2particle diameter is the purity of 150nm, Zn is 99.9%, TiO 2be 15:5:1 with the mass ratio of CuO and Zn, adopt electron beam evaporation plating, thickness is 100nm, and the energy density of electron beam evaporation plating is 60W/cm 2.Evaporation hole injection layer: material is MoO 3, thickness is 80nm; Evaporation hole transmission layer: material is TCTA, thickness is 60nm; Evaporation luminescent layer: selected materials is DCJTB, thickness is 10nm; Evaporation electron transfer layer, material is TAZ, and thickness is 35nm; Evaporation electron injecting layer, material are LiF, and thickness is 3nm.Evaporation negative electrode, material is Au, and thickness is 250nm; Finally obtain required electroluminescent device.The operating pressure of preparation is 2 × 10 -4pa, the evaporation rate of organic material is 0.5nm/s, and the evaporation rate of metallic cathode is 6nm/s, and the evaporation rate of metallic compound is 6nm/s.The accelerating voltage of magnetron sputtering: 600V, magnetic field about: 100G, power density: 30W/cm 2.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.

Claims (10)

1. an organic electroluminescence device, it is characterized in that, comprise the substrate of glass, anode, scattering layer, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and the negative electrode that stack gradually, the material of described scattering layer comprises titanium dioxide, passivating material and zinc, described passivating material is selected from least one in silicon dioxide, aluminium oxide, nickel oxide and cupric oxide, and the mass ratio of described titanium dioxide, passivating material and zinc is 10:3:1 ~ 20:8:1.
2. organic electroluminescence device according to claim 1, is characterized in that, the thickness of described scattering layer is 50nm ~ 300nm.
3. organic electroluminescence device according to claim 1, it is characterized in that, the material of described luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9,10-bis--β-naphthylene anthracene, 4, at least one in two (9-ethyl-3-carbazole vinyl)-1, the 1'-biphenyl of 4'-and oxine aluminium.
4. organic electroluminescence device according to claim 1, is characterized in that, the refractive index of described substrate of glass is 1.8 ~ 2.2, in 400nm transmitance higher than 90%.
5. organic electroluminescence device according to claim 1, is characterized in that, the material of described anode is indium tin oxide, aluminium zinc oxide or indium-zinc oxide.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Anode is prepared at glass basic surface;
Scattering layer is prepared at described anode surface, the material of described scattering layer comprises titanium dioxide, passivating material and zinc, described passivating material is selected from least one in silicon dioxide, aluminium oxide, nickel oxide and cupric oxide, and the mass ratio of described titanium dioxide, passivating material and zinc is 10:3:1 ~ 20:8:1; And
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode is prepared successively on the surface of described scattering layer.
7. the preparation method of organic electroluminescence device according to claim 6, is characterized in that: the thickness of described scattering layer is 50nm ~ 300nm.
8. the preparation method of organic electroluminescence device according to claim 6, it is characterized in that: the material of described luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9, at least one in 10-bis--β-naphthylene anthracene, 4,4'-two (9-ethyl-3-carbazole vinyl)-1,1'-biphenyl and oxine aluminium.
9. the preparation method of organic electroluminescence device according to claim 6, is characterized in that: described scattering layer is prepared by electron beam evaporation plating, and the energy density of electron beam evaporation plating is 10 ~ 100W/cm 2.
10. the preparation method of organic electroluminescence device according to claim 6, is characterized in that: described substrate of glass is placed in isopropyl alcohol and soaks 12 hours ~ 24 hours after using distilled water, alcohol flushing clean before preparing anode.
CN201310370272.6A 2013-08-22 2013-08-22 Organic electroluminescent device and preparation method thereof Pending CN104425724A (en)

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Cited By (1)

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CN106992257A (en) * 2017-05-02 2017-07-28 深圳市华星光电技术有限公司 Top emitting Organic Light Emitting Diode and manufacture method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106992257A (en) * 2017-05-02 2017-07-28 深圳市华星光电技术有限公司 Top emitting Organic Light Emitting Diode and manufacture method
WO2018201568A1 (en) * 2017-05-02 2018-11-08 深圳市华星光电技术有限公司 Top emission organic light emitting diode, and manufacturing method
US10361399B2 (en) 2017-05-02 2019-07-23 Shenzhen China Star Optoelectronics Technology Co., Ltd Top-emitting OLED and a manufacturing method thereof

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Application publication date: 20150318