CN104425419A - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
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- CN104425419A CN104425419A CN201310594171.7A CN201310594171A CN104425419A CN 104425419 A CN104425419 A CN 104425419A CN 201310594171 A CN201310594171 A CN 201310594171A CN 104425419 A CN104425419 A CN 104425419A
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- metal dam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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Abstract
The invention discloses a semiconductor device and a manufacturing method thereof. In some embodiments, the semiconductor device comprises a substrate and a plurality of contact bonding pads arranged on the substrate. The contact bonding pads are arranged in a ball grid array (BGA), and the BGA includes a plurality of corners. A metal bar is arranged around each corner of the plurality of corners of the BGA.
Description
Cross-reference to related applications
The application relates to following CO-PENDING and commonly assigned patent application: sequence number is 13/938, the title submitted in 10 days July in 2013 of 821 is the patent application of " Die-on-Interposer Assembly with DamStructure and Method of Manufacturing the Same ", and this application full content is hereby expressly incorporated by reference.
Technical field
The present invention relates in general to semiconductor device, more specifically, relates to the semiconductor device comprising ball grid array (BGA).
Background technology
Semiconductor device is used in various electronic application, such as, and personal computer, mobile phone, digital camera and other electronic equipments.Usually pass through side's in turn depositing insulating layer or dielectric layer, conductive layer and semiconductor material layer on a semiconductor substrate, and use photoetching to carry out the multiple material layer of patterning to form circuit block and element thereon, thus manufacture semiconductor device.Usually on single semiconductor crystal wafer, tens or up to a hundred integrated circuits are manufactured.By along line cutting integrated circuit, divide singulated dies.Such as, with the packaged type of multi-chip module or other types, each tube core is encapsulated separately.
Semi-conductor industry improves constantly the integrated level of multiple electronic unit (such as, transistor, diode, resistor and capacitor etc.) by constantly reducing minimum feature size, this makes more component integration in given area.In some applications, these less electronic units of such as integrated circuit lead also require the comparatively small package taking more small size than the encapsulation in past.
Developed for semiconductor device to have compared with a kind of encapsulated type of small package be wafer-level packaging (WLP), wherein, integrated circuit is in an enclosure packed, and packaging part generally includes cross tie part (PPI) after redistribution layer (RDL) or passivation, it is for the lead-in wire of the contact pad of fan-out (fan-out) packaging part, thus can manufacture electric contact piece in the spacing larger than the contact pad of integrated circuit.Such as, WLP is generally used for encapsulating the integrated circuit (IC) requiring high speed, high density and larger number of pins.
Summary of the invention
According to an aspect of the present invention, provide a kind of semiconductor device, comprising: substrate; Multiple contact pad, is arranged on types of flexure, and contact pad is arranged to ball grid array (BGA), and BGA comprises multiple turning; And metal dam, be arranged on around each turning in multiple turnings of BGA.
Preferably, metal dam is set at least four contact pads close to each turning being arranged in multiple turning on the side of BGA.
Preferably, when seeing substrate from the bottom up, metal dam is discontinuous.
Preferably, when seeing substrate from the bottom up, metal dam mainly comprises square, rectangle, polygon, circle or oval shape.
Preferably, this semiconductor device also comprises: the conductive projection being connected to each contact pad in multiple contact pad, and conductive projection has about 270 μm or less diameter.
Preferably, metal dam comprises the first metal dam, also comprises the second metal dam close to the first metal dam.
According to a further aspect in the invention, provide a kind of semiconductor device, comprising: substrate; Multiple contact pad, is arranged on types of flexure, and contact pad is arranged to ball grid array (BGA), and BGA comprises multiple turning; Electric conducting material, is arranged on the top of each contact pad in multiple contact pad; And metal dam, be arranged on around each turning in multiple turnings of BGA.
Preferably, metal dam has about 25 μm or larger width.
Preferably, about 100 μm or larger, each contact pad interval in metal dam and multiple contact pad.
Preferably, electric conducting material comprises conductive projection, and conductive projection has the first height, and metal dam has the second height, and second is highly about 1/3 or larger of the first height.
Preferably, this semiconductor device also comprises: protective material, between the electric conducting material above to be arranged in multiple contact pad each at types of flexure and between metal dam and electric conducting material.
Preferably, protective material has the thickness of about 50 μm to about 130 μm.
Preferably, when being spin-coated on blank wafer by protective material, protective material comprises the material that thickness is greater than about 10 μm.
Preferably, protective material has the transmissivity of about 70% or larger.
According to another aspect of the invention, provide a kind of method manufacturing semiconductor device, the method comprises: form multiple contact pad at types of flexure, and multiple contact pad is arranged to ball grid array (BGA), and BGA comprises multiple turning; Types of flexure around each turning in multiple turnings of BGA forms metal dam; Electric conducting material is formed above each contact pad in multiple contact pad; And the types of flexure between electric conducting material above each contact pad in multiple contact pad and between metal dam and electric conducting material forms protective material.
Preferably, form metal dam and comprise plating dam.
Preferably, the method also comprises: while the multiple contact pad of formation, form the Part I on metal dam, and forms metal dam and comprise: above the Part I on multiple contact pad and metal dam, form photoresist layer; Patterned photo glue-line, with the Part I on exposing metal dam; The Part II on plating dam above the Part I on metal dam; And removal photoresist layer.
Preferably, form protective material and comprise spin-on material, material is selected from the group be substantially made up of resin, polyimides, epoxy resin, polybenzoxazoles (PBO) or their combination.
Preferably, form protective material and comprise: the surface covering substrate, form the layer of basic uniform protective material.
Preferably, substrate comprises interposer substrate or integrated circuit lead.
Accompanying drawing explanation
In order to more completely understand the disclosure and advantage thereof, come by reference to the accompanying drawings by reference to the following description now, wherein:
Fig. 1 shows the bottom view comprising the semiconductor device on the metal dam close to corner region according to some embodiments of the present invention;
Fig. 2 shows the bottom view comprising the semiconductor crystal wafer of the multiple semiconductor device shown in Fig. 1 according to some embodiments;
Fig. 3 is the sectional view of a part for the semiconductor crystal wafer shown in Fig. 2;
Fig. 4 to Fig. 7 shows the sectional view of method in each stage comprising the semiconductor device on metal dam according to the manufacture of some embodiments;
Fig. 8 to Figure 11 illustrates the sectional view of method in each stage on the metal dam of the manufacture semiconductor device according to some embodiments;
Figure 12 shows the bottom view comprising the corner region of the semiconductor device on metal dam according to some embodiments;
Figure 13 is the sectional view of the semiconductor device according to some embodiments;
Figure 14 and Figure 15 shows the bottom view on the metal dam of the various shape of the semiconductor device according to some embodiments; And
Figure 16 shows the flow chart of the method for the manufacture semiconductor device according to some embodiments.
Unless otherwise indicated, the corresponding label otherwise in different figure and character represent corresponding parts usually.Drafting figure be clearly shown that embodiment related fields and need not drafting figure in proportion.
Embodiment
Discuss manufacture and the use of some embodiments of the present invention below in detail.But, should be appreciated that the multiple applicable inventive concept that the invention provides and can realize in multiple specific environment.The specific embodiment discussed only illustrates and manufactures and use ad hoc fashion of the present invention, and does not limit the scope of the present disclosure.
Some embodiments of the present invention relate to the method manufacturing semiconductor device and structure thereof.The present invention comprises the semiconductor device of the ball grid array (BGA) of the metal dam structure had close to corner region by describing.New structure and manufacture method can be implemented to the packaging of integrated circuit lead, intermediary's packaging part or other types.
First with reference to figure 1, the bottom view of the semiconductor device 100 according to some embodiments of the present invention is shown.Semiconductor device 100 comprises substrate 102.Such as, substrate 102 can comprise the Semiconductor substrate comprising silicon or other semi-conducting materials, and can be covered by insulating barrier.Substrate 102 can comprise unshowned active parts or circuit.In certain embodiments, substrate 102 does not include source block or circuit.Such as, substrate 102 can comprise the silica be positioned at above monocrystalline silicon.Substrate 102 can comprise other conductive layers or other semiconductor elements, such as, and transistor, diode, resistor, inductor and capacitor etc.Compound semiconductor (such as, GaAs, InP, Si/Ge or SiC) can replace silicon to use.Such as, substrate 102 can comprise silicon-on-insulator (SOI) or germanium on insulator (GOI) substrate.In certain embodiments, substrate 102 comprises integrated circuit lead, and integrated circuit lead comprises the circuit (not shown) formed thereon.In certain embodiments, again such as, substrate 102 comprises interposer substrate (interposer substrate), such as, for the interposer substrate of WLP.
Substrate 102 comprises the multiple contact pads 104 be formed thereon.Not shown contact pad 104 in Fig. 1, with reference to figure 3.Contact pad 104 is arranged according to the mode of ball grid array (BGA) in terms of rows and columns.Show the BGA filled completely, alternatively, BGA can comprise the contact pad 104 groups in presumptive area, and does not form contact pad in other regions.
The electric conducting material 106 comprising conductive projection or soldered ball is connected to contact pad 104.In certain embodiments, electric conducting material 106 comprises the eutectic material of such as solder.Term used herein " solder " comprising: lead-based solder and lead-free solder, and such as, for the Pb-Sn composition of lead-based solder, lead-free solder comprises InSb and SAC (" SAC ") composition; And there is common fusing point and in electronic application, form other eutectic materials of conductive solder connector.Such as, for lead-free solder, the SAC solder of different composition can be used, such as, SAC105(Sn98.5%, Ag1.0% and Cu0.5%), SAC305 and SAC405.The unleaded electric conducting material 120 of such as soldered ball also can be formed by SnCu compound, and does not use silver (Ag).Alternatively, lead-free solder connector can comprise tin and silver (Sn-Ag), and does not use copper.
Electric conducting material 106 can comprise the connector of dimpling block, controlled collapse chip connection (C4) projection or other types.Such as, electric conducting material 106 can comprise spherical or aspherical connector.In certain embodiments, electric conducting material 106 comprises substantially for its side close to contact pad 104 place while of spherical is plane.Use " soldered ball decline " technique or additive method, electric conducting material 106 is attached on contact pad 104.
Above substrate 102 between the electric conducting material 106 above each contact pad 104, protective material 108 is set.In certain embodiments, protective material 108 comprises the resin be spun on substrate 102.Such as, in certain embodiments, protective material 108 comprises potting resin.Protective material 108 comprises the diaphragm above the substrate 102 that is coated between electric conducting material 106.Such as, protective material 108 comprises insulating material, and comprises resin, polyimides, epoxy resin, polybenzoxazoles (PBO), the resin of other types and/or their combination.Alternatively, protective material 108 can comprise other materials.
In certain embodiments, protective material 108 comprises the material of the transmissivity with about more than 70%.Alternatively, the transmissivity of protective material 108 can comprise other values.Protective material 108 can comprise the cryogenic curing type polyimide structures manufactured by Electron Material Co., Ltd of Japanese Asahi Chemical Industry (Asahi Kasei E-materials Corporation), and it has the transmissivity of about 80%.Such as, protective material 108 can comprise PBO, and it has the transmissivity of about 82%.Alternatively, other materials may be used for protective material 108.Such as, in certain embodiments, protective material 108 comprises when it is spin-coated on blank wafer, the material that thickness is greater than about 10 μm.
In certain embodiments, protective material 108 does not comprise moulding compound.Protective material 108 avoids the requirement of applying moulding compound between substrate 102 and the object (such as package substrate, printed substrate (PWB), motherboard, system board or other goal systems) that will be attached electric conducting material 106.
Metal dam 110 is arranged on around each turning of the BGA of contact pad 104.In certain embodiments, metal dam 110 comprises electric conducting material, such as, and copper or copper alloy.In certain embodiments, metal dam 110 comprises the material identical with contact pad 104.Protective material 108 is also arranged between metal dam 110 and electric conducting material 106.Metal dam 110 guarantees that the turning of BGA scribbles protective material 108, such as, all scribbles protective material 108 in all sides of the electric conducting material 106 at BGA turning.Such as, in certain embodiments, metal dam 110 improves the uniformity of the thickness of protective material 108.
In the embodiment shown in fig. 1, metal dam 110 comprises basic at bottom view is foursquare shape.Alternatively, metal dam 110 can comprise other shapes.Such as, in certain embodiments, metal dam 110 can mainly comprise square, rectangle, polygon, circle or oval shape in the bottom view of substrate 102.Alternatively, metal dam 110 can comprise other shapes.
Metal dam 110 is discontinuous in the bottom view of substrate 102.Such as, in FIG, metal dam 110 is only formed in around the turning of the BGA of contact pad 104, and around the central area not being formed in the side of BGA.In certain embodiments, such as, metal dam 110 only needs to be formed in the region of the thickness improving protective material 108 in BGA.
Metal dam 110 and each the spaced apart size d in multiple contact pad 104
1, in certain embodiments, size d
1more than about 100 μm.Metal dam 110 comprises width at the bottom view of semiconductor device 100, and in certain embodiments, this width is the size d of more than about 25 μm
2.The length that the side on metal dam 110 extends along the side of the BGA of contact pad 104 is size d
3, such as, in certain embodiments, size d
3for the length of integrated circuit lead or about more than 1/3 of width.Alternatively, size d
1, d
2and d
3other values can be comprised.
Fig. 2 shows the bottom view comprising the semiconductor crystal wafer 112 of the multiple semiconductor device 100 shown in Fig. 1 according to some embodiments.Such as, comprise in the embodiment of interposer substrate at substrate 102, semiconductor crystal wafer 112 manufactures multiple semiconductor device 100, and divide semiconductor device 100 along line 114, thus formed subsequently can by individually or the single semiconductor device 100 encapsulated together with other devices 100, single semiconductor device 100 can be used in terminal applies or can be used as packaging.
Fig. 3 is the sectional view of a part for the semiconductor crystal wafer 112 shown in Fig. 2.In certain embodiments, semiconductor device 100 comprises redistribution layer (RDL) 116.In certain embodiments, contact pad 104 is parts of RDL116.Alternatively, contact pad 104 can be connected to the lead-in wire of the other types of RDL116 or semiconductor device 100.Such as, in certain embodiments, RDL116 comprises conductive lead wire and insulation material layer, and cross tie part (PPI) after under-bump metallization (UBM) structure and/or passivation can be comprised.Again such as, comprise in the embodiment of PPI at RDL116, the lead-in wire of PPI can comprise PPI line and comprise the contact pad 104 of the PPI pad 104 be arranged on above substrate 102.
Fig. 4 to Fig. 7 shows according to the semiconductor device 100 comprising metal dam 110 of some embodiments sectional view in each stage manufactured.First, substrate 102 is provided.Semiconductor device 100 is square or rectangle normally, and has four turnings (with reference to figure 1); But such as, in some applications, semiconductor device 100 can have the turning of other shapes and number.Substrate 102 can comprise the unshowned one or more integrated circuit (IC) be formed thereon.Such as, according to the circuit design of IC, IC can comprise active and passive device, conductive layer and dielectric layer.
As shown in Figure 4, the method is included in above substrate 102 and forms multiple contact pad 104.Multiple contact pad 104 is arranged to the BGA comprising multiple turning.In certain embodiments, going up in metal layer or semiconductor layer most, forming contact pad 104 at the end face place close to substrate 102.
Side uses the patterning of conductive material layer and depositing operation to form contact pad 104 on the substrate 102.Such as, contact pad 104 can comprise aluminium (Al), copper (Cu), tin (Sn), nickel (Ni), gold (Au), silver (Ag), other electric conducting materials or their multilayer or combination.Such as, plating or chemical plating process can be used to form contact pad 104.The size of contact pad 104, shape and position only for illustration of object.Multiple contact pad 104 can have same size or different size.
Next, as shown in Figure 5, metal dam 110 is formed above the substrate 102 around each turning in multiple turnings of BGA.In certain embodiments, metal dam 110 is plated on substrate 102.As shown in Figure 5, in certain embodiments, above the insulating material of RDL116, metal dam 110 is formed.
As shown in Figure 6, electric conducting material 106 is formed above each in multiple contact pad 104.Such as, in certain embodiments, soldered ball decline technique is used to form electric conducting material 106.Alternatively, additive method can be used to form electric conducting material 106.
As shown in Figure 7, side and between electric conducting material 106 above each in multiple contact pad 104 and form protective material 108 between metal dam 110 and electric conducting material 106 on the substrate 102.In certain embodiments, spin coating protective material 108.Alternatively, additive method can be used to form protective material 108.In certain embodiments, heating process and/or ultraviolet (UV) energy process technique is used to solidify protective material 108.In other embodiments, curing schedule is not needed.
Fig. 8 to Figure 11 shows the sectional view of method in each stage on the metal dam 110 of the manufacture semiconductor device 100 according to some embodiments.Show the RDL116 comprising PPI.RDL116 comprises the multiple contacts 118 be arranged on above substrate 102.A contact 118 is only shown in Fig. 8 to Figure 11; But, according to some embodiments, the multiple contact 118 of square one-tenth on the substrate 102.Such as, contact 118 can comprise Al, Cu, Sn, Ni, Au, Ag, other electric conducting materials or their multilayer or combination.
Above contact 118 and substrate 102, formation comprises the passivation layer 120 of insulating material for support structure and physical isolation.Such as, passivation layer 120 comprises silicon nitride (SiN), silicon dioxide (SiO
2), silicon oxynitride (SiON), polyimides (PI), benzocyclobutene (BCB), PBO, other insulating material or their combination or multilayer.Part passivation layer 120 can be removed to produce opening in passivation layer 120 by using mask to limit photoresist etch process, thus expose portion contact 118, and other parts of contact 118 are capped.
Insulating material 122 is formed above passivation layer 120.Along the outline line of passivation layer 120, and fill in the opening of passivation layer 120 part be positioned at above contact 118, passivation layer 120 is formed insulating material 122.Insulating material 122 not exclusively can fill the opening of the passivation layer 120 above contact 118; On the contrary, can patterning insulating material 122 to form opening, thus expose portion contact 118, and cover other parts of contact 118.Above contact 118, use photoetching, in insulating material 122 and passivation layer 120, form opening, make it possible to the electrical connection producing contact 118.Insulating material 122 can be formed by polymer (such as, epoxy resin, polyimides, benzocyclobutene (BCB), polybenzoxazoles (PBO) etc.), but can also use other flexible relative, be generally organic dielectric material.Spin coating or other conventional formation methods can be used to apply insulating material 122.In certain embodiments, such as, insulating material 122 comprises " PBO " layer.Such as, the thickness of insulating material 122 can between about 5 μm and about 30 μm.Alternatively, insulating material 122 can comprise other sizes.
The kind crystal layer 130 comprising electric conducting material (such as copper) is formed above the insulating material 122 of contact 118, patterning and the passivation layer 120 of patterning.In certain embodiments, photoresist 134 layers is formed above kind of crystal layer 130, and cross tie part (PPI) after the passivation for comprising PPI line 132 can be utilized, comprise the desired pattern of the contact pad 104 of PPI pad 104 and the Part I 132 ' on metal dam 110, patterned photo glue-line 134 simultaneously.Metal dam 110 also comprises the part 130 ' of kind of crystal layer 130.Then, by the photoresist layer 134 of patterning, use depositing process to plate the Part I 132 ' on PPI line 132, PPI pad 104 and the metal dam 110 be positioned at above kind of crystal layer 130, while formation PPI line 132 and PPI pad 104, form metal dam 110.
Such as, in certain embodiments, the Part I 132 ' on PPI line 132, PPI pad 104 and metal dam 110 can have the thickness being less than about 30 μm, and can have the thickness of about 2 μm to about 10 μm.Such as, the Part I 132 ' on PPI line 132, PPI pad 104 and metal dam 110 can comprise metal, such as, and Ti, Al, Ni, nickel vanadium (NiV), Cu or their combination or multilayer.Such as, plating, chemical plating, sputtering, process for chemical vapor deposition of materials with via and/or photoetching process can be used, form the Part I 132 ' on PPI line 132, PPI pad 104 and metal dam 110.Such as, the Part I 132 ' on PPI line 132, PPI pad 104 and metal dam 110 can comprise the multilayer of the adhesive layer of individual layer or use Ti, TiW, Cr or other materials.Alternatively, the Part I 132 ' on PPI line 132, PPI pad 104 and metal dam 110 can comprise other materials and size, and additive method can be used to be formed.Such as, substrate 102 is connected to multiple PPI line 132 and PPI pad 104, and wherein PPI line 132 and PPI pad 104 can be electrically connected to the contact 118 of substrate 102.
In certain embodiments, by at the insulating material 122 of contact 118 and patterning and passivation layer 120 disposed thereon electric conducting material, and use photoetching process patterning conductive material, use metal etch (subtractive etch) technique to form the Part I 132 ' on PPI line 132, PPI pad 104 and metal dam 110 simultaneously.Then, the Part I 132 ' top on PPI line 132, PPI pad 104 and metal dam 110 forms insulating material 134 '.Such as, kind of crystal layer 130 can not be comprised in these embodiments.
Then, the Part I 132 ' on metal dam 110 and kind crystal layer 130 ' top form the Part II 136(on metal dam 110 with reference to Figure 10).As shown in Figure 9, in order to form Part II 136, form photoresist layer 134 ' in the Part I 132 ' top on photoresist 134 or insulating material 134 ', PPI line 132, contact pad 104 and metal dam 110 '.In certain embodiments, photoresist layer 134 ' ' comprise dry film photoresist, enough or compared with the metal dam 110 of heavy thickness to realize having.The photoresist 134 ' of other types can also be used '.Also as shown in Figure 9, photoresist layer 134 ' ' be patterned as the desired pattern of the Part II 136 for metal dam 110, with the Part I 132 ' on exposing metal dam 110.Such as, in certain embodiments, the pattern of the Part II 136 on metal dam 110 is substantially identical with the pattern of the Part I 132 ' on metal dam 110.Alternatively, the pattern of the Part II 136 on metal dam 110 can be different from the pattern of the Part I 132 ' on metal dam 110, but not shown.Such as, the pattern of the Part II 136 on metal dam 110, compared with the pattern of the Part I 132 ' on metal dam 110, can to have more greatly, less or identical width.
Then, as shown in Figure 10, use depositing process, form the Part II 136 on metal dam 110 in Part I 132 ' top.The Part II 136 on metal dam 110 passes through the photoresist layer 134 ' of patterning ' be plated on Part I 132 '.Metal dam 110 comprises Part I 132 ' and Part II 136.In certain embodiments, metal dam 110 also comprises kind of a crystal layer 130 '.Then, as shown in figure 11, to peel off by making wet method with photoresist or other remove techniques, removing photoresist layer 134 ' ' and photoresist layer 134 or insulating material 134 '.Such as, also use etch process or other technique, remove the kind crystal layer 130 being retained in the top face of insulating material 122.
In other embodiments, can metal etching process be used, form the Part II 136 on metal dam 110, again such as, by deposits conductive material, and use photoetching technique patterning conductive material, form the Part II on metal dam 110.
In embodiment shown in Fig. 8 to Figure 11, in single conductive material layer, form RDL116, and RDL116 comprises PPI line 132 and comprise the contact pad 104 of PPI pad 104.In other embodiments, additional conductive material layer can be comprised in RDL116, and form contact pad 104 in the conductive material layer of the top of RDL116, make electric conducting material 106 can be connected to contact pad 104(with reference to Figure 13).Such as, in certain embodiments, in one or more conductive material layers of RDL116, metal dam 110 is formed.Again such as, in certain embodiments, in the same conductive material layer forming contact pad 104, metal dam 110 is formed.
Figure 12 is the bottom view of the corner region of the semiconductor device 100 comprising metal dam 110 according to some embodiments.In certain embodiments, metal dam 110 is set to close at least four contact pads 104 on the side of the BGA at each turning being arranged in multiple turning.Such as, metal dam 110 comprises " L " shape, and every side of L all extends along at least four contact pads 104.Again such as, in certain embodiments, metal dam 110 along be positioned at contact pad 104 BGA each corner region both sides at least three contact pads 104 extend.
In certain embodiments, as shown in the shade (such as, dotted line) at 110 ' place in Figure 12, more than one metal dam is placed at the corner region close to BGA.Such as, in certain embodiments, metal dam 110 comprises the first metal dam 110, and semiconductor device also comprises the second metal dam 110 ' close to the first metal dam 110.In other embodiments, alternatively, can by three or more metal dam 110 or 110 ' be included in close to the turning of BGA semiconductor device 100 on, but not shown.
Figure 13 is the sectional view of the semiconductor device 100 according to some embodiments, shows some sizes of each element.Figure 13 shows the more specifically view close to line 114 in Fig. 3.The thickness on metal dam 110 is size d
4, in certain embodiments, size d
4between about 50 μm to about 130 μm.The height of electric conducting material 106 or diameter are size d
5, in certain embodiments, size d
5below about 270 μm.The thickness of protective material 108 is size d
6, in certain embodiments, size d
6between about 50 μm to about 130 μm.Alternatively, size d
4, d
5and d
6other values can be comprised.
In certain embodiments, owing to comprising novel metal dam 110 in semiconductor device 100 structure, protective material 108 is advantageously basic uniform protective material 108 layers, and it has the basic size d covering the whole surface of substrate 102
6.Metal dam 110 guarantees that protective material 108 has enough height in the corner region of BGA, and prevents protective material 108 from overflowing and flow through metal dam 110.
In certain embodiments, electric conducting material 106 comprises conductive projection, and first of conductive projection is highly size d
5, and second of metal dam 110 is highly size d
4, wherein, there is size d
4second be highly about there is size d
5the first height 1/3 or more.Alternatively, size d
4and d
5other relative values can be comprised.
Figure 14 and Figure 15 shows the bottom view on the metal dam 110 of the various shape of the semiconductor device 100 according to some embodiments.Such as, in fig. 14, showing shape is polygonal metal dam 110 substantially, and in fig .15, showing shape is circular metal dam 110 substantially.Metal dam 110 is discontinuous, and comprises gap in the central area of the side of the BGA of semiconductor device 100.Alternatively, metal dam 110 can comprise other shapes.
Figure 16 shows flow process Figure 160 of the method for the manufacture semiconductor device 100 according to some embodiments.In step 162, square one-tenth contact pad 104(is also with reference to figure 4 on the substrate 102), contact pad 104 is arranged to the BGA comprising turning.In step 164, metal dam 110(is formed above the substrate 102 around the turning of BGA with reference to figure 5).In step 166, above contact pad 104, electric conducting material 106(is formed with reference to figure 6).In step 168, form protective material 108(above the substrate 102 between the electric conducting material 106 above contact pad 104 and between metal dam 110 and electric conducting material 106 with reference to figure 7).
Some embodiments of the present invention comprise the method manufacturing and comprise the semiconductor device on novel metal dam as herein described, and comprise the semiconductor device with metal dam.Some embodiments of the present invention also comprise the semiconductor device after the encapsulation using the encapsulation with metal dam as herein described to encapsulate.
The advantage of some embodiments of the present invention comprises: provide novel metal dam of the reliability improving semiconductor device and forming method thereof.Disclose a kind of novel B GA structure, it comprises the metal dam of the corner region close to BGA.Because semiconductor device comprises metal dam, therefore avoid thinner at the protective material of the corner of BGA or lack protective material.In certain embodiments, during the lead-in wire of semiconductor device forming such as contact pad 104, the metal dam of forming section.
Normally used photoetching and/or depositing process can be used, advantageously generate metal dam.Only need an extra mask and once extra photoetching process to be included in semiconductor device design on novel dam.In certain embodiments, twice depositing process is used to form metal dam; First depositing process forms the Part I (also for the formation of contact pad) on metal dam, and the second depositing process forms the Part II on metal dam.
By evenly applying protective material, protecting the turning contact pad of BGA well, thus prevent or reducing integrity problem.Protective material is uniform in the whole surface of semiconductor device substantially.Protective material has identical thickness substantially at corner region, central area and fringe region place.And, manufacturing structure and the design that easily can implement novel metal dam in handling process.
Such as, when in surface mounting technology (SMT) device metal dam being applied to such as SMT integrated circuit lead and SMT encapsulation part, metal dam is advantageous particularly.SMT device comprises spin coating protective material, and does not require to use underfill, provides cost savings.Metal dam stops protective material during coating processes, the height guaranteeing protective material in the semiconductor device the heart and edge even, and guarantee that protective material protects crucial turning conductive projection well.
According to some embodiments of the present invention, a kind of semiconductor device comprises substrate and is arranged on multiple contact pads of types of flexure.Contact pad is arranged to BGA, and BGA comprises multiple turning.Metal dam is arranged on around each turning in multiple turnings of BGA.
According to other embodiments, a kind of semiconductor device comprises substrate and is arranged on multiple contact pads of types of flexure.Contact pad is arranged to BGA, and BGA comprises multiple turning.Electric conducting material is arranged on the top of each in multiple contact pad.Metal dam is arranged on around each turning in multiple turnings of BGA.
According to other embodiments, a kind of method manufacturing semiconductor device is included in types of flexure and forms multiple contact pad.Multiple contact pad is arranged to BGA, and BGA comprises multiple turning.The method comprises: types of flexure around each turning in multiple turnings of BGA forms metal dam, and forms electric conducting material above each in multiple contact pad.Types of flexure between electric conducting material above each in multiple contact pad and between metal dam and electric conducting material forms protective material.
Although describe in detail embodiments more of the present disclosure and advantage thereof, should be appreciated that, when not deviating from the spirit and scope of the present invention that claims limit, can make multiple change, replacement and change to the present invention.Such as, the person skilled in the art will easily understand, multiple parts described herein, function, technique and material can be changed, but still in the scope of the present disclosure.And, the scope of the application be not intended to be limited to describe in this specification technique, machine, manufacture, the composition of material, instrument, method and step specific embodiment.Those of ordinary skill in the art easily will expect from the disclosure, according to the present invention, can utilize existing or from now on by exploitation, perform substantially identical function with corresponding embodiment of the present invention or realize the technique of substantially identical result, machine, manufacture, the composition of material, instrument, method or step.Thus claims are intended to the composition of this technique, machine, manufacture, material, instrument, method or step to be included in their scope.
Claims (10)
1. a semiconductor device, comprising:
Substrate;
Multiple contact pad, is arranged on described types of flexure, and described contact pad is arranged to ball grid array (BGA), and described BGA comprises multiple turning; And
Metal dam, is arranged on around each turning in multiple turnings of described BGA.
2. semiconductor device according to claim 1, wherein, described metal dam is set at least four contact pads close to each turning being arranged in described multiple turning on the side of described BGA.
3. semiconductor device according to claim 1, wherein, when seeing described substrate from the bottom up, described metal dam is discontinuous.
4. semiconductor device according to claim 1, wherein, when seeing described substrate from the bottom up, described metal dam mainly comprises square, rectangle, polygon, circle or oval shape.
5. semiconductor device according to claim 1, also comprises: the conductive projection being connected to each contact pad in described multiple contact pad, and described conductive projection has about 270 μm or less diameter.
6. semiconductor device according to claim 1, wherein, described metal dam comprises the first metal dam, also comprises the second metal dam close to described first metal dam.
7. a semiconductor device, comprising:
Substrate;
Multiple contact pad, is arranged on described types of flexure, and described contact pad is arranged to ball grid array (BGA), and described BGA comprises multiple turning;
Electric conducting material, is arranged on the top of each contact pad in described multiple contact pad; And
Metal dam, is arranged on around each turning in multiple turnings of described BGA.
8. semiconductor device according to claim 7, wherein, described metal dam has about 25 μm or larger width.
9. semiconductor device according to claim 7, wherein, about 100 μm or larger, each contact pad interval in described metal dam and described multiple contact pad.
10. manufacture a method for semiconductor device, described method comprises:
Form multiple contact pad at types of flexure, described multiple contact pad is arranged to ball grid array (BGA), and described BGA comprises multiple turning;
Described types of flexure around each turning in multiple turnings of described BGA forms metal dam;
Electric conducting material is formed above each contact pad in described multiple contact pad; And
Described types of flexure between described electric conducting material above each contact pad in described multiple contact pad and between described metal dam and described electric conducting material forms protective material.
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| US14/015,808 US9209140B2 (en) | 2013-07-10 | 2013-08-30 | Semiconductor devices and methods of manufacture thereof |
| US14/015,808 | 2013-08-30 |
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| CN107492577A (en) * | 2017-06-26 | 2017-12-19 | 南通华隆微电子股份有限公司 | A kind of semiconductor package with projection cube structure |
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