CN104410770A - Novel phase-shift image processing system - Google Patents
Novel phase-shift image processing system Download PDFInfo
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- CN104410770A CN104410770A CN201410695940.7A CN201410695940A CN104410770A CN 104410770 A CN104410770 A CN 104410770A CN 201410695940 A CN201410695940 A CN 201410695940A CN 104410770 A CN104410770 A CN 104410770A
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Abstract
The invention discloses a novel phase-shift image processing system. The novel phase-shift image processing system is characterized by comprising a boost circuit, a drive circuit, a processing circuit, a two-stage low-pass filtering and amplifying circuit and a phase shift processing circuit; the drive circuit is connected with the boost circuit; the processing circuit is connected with both the boost circuit and the drive circuit; the two-stage low-pass filtering and amplifying circuit is connected with the output end of the processing circuit; the phase shift processing circuit is connected with the two-stage low-pass filtering and amplifying circuit; the phase shift processing circuit is composed of a phase shift chip U1, a triode VT4, a triode VT5, a resistor R14, a polar capacitor C9 and the like; one end of the resistor R14 is connected with a pin VCC+ of the phase shift chip U1, and the other end of the resistor R14 is connected with a pin IN1 of the phase shift chip U1; a cathode of the polar capacitor C9 is connected with the pin IN1 of the phase shift chip U1 through a resistor R13, and an anode of the polar capacitor C9 is connected with a pin IN2 of the phase shift chip U1. The novel phase-shift image processing system has the advantage that the phase shift processing circuit helps guarantee non-distortion of signals when the system amplifies image signals.
Description
Technical field
The present invention relates to electronic applications, specifically refer to a kind of phase shift New Image treatment system.
Background technology
In current social frequent occur crack a crib, plunder, the continuous generation of the case such as to hurt sb.'s feelings, Given this plant reason, antitheft door starts to come into huge numbers of families, brings peacefulness to family.Along with the development of society, the progress of technology, the acceleration of rhythm of life, the raising of the level of consumption, people are also more and more higher for the expectation of household, also more and more urgent to requiring easily, so people have invented present face recognition door control system.
But the image procossing precision in current face identification system is not high thus cause the accuracy of identification of face identification system not high, often there will be the existing picture of wrong identification, brought very large potential safety hazard.
Summary of the invention
The object of the invention is to overcome the defect that the processing accuracy of current image processing system is not high, a kind of phase shift New Image treatment system is provided.
The following technical scheme of object of the present invention realizes: a kind of phase shift New Image treatment system, comprise booster circuit, the drive circuit be connected with booster circuit, the treatment circuit be simultaneously connected with drive circuit with booster circuit, the two-stage low-pass filtering amplifying circuit be connected with treatment circuit output, and the phase shift treatment circuit be connected with two-stage low-pass filtering amplifying circuit, described phase shift treatment circuit is by phase shift chip U1, triode VT4, triode VT5, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R14 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R13, the polar capacitor C9 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R15, the polar capacitor C11 that negative pole is connected with the collector electrode of triode VT4, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the other end is as the potentiometer R16 of an output of system, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D4 that N pole is connected with the base stage of triode VT4, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D5 that N pole is connected with the emitter of triode VT5 forms, the VCC+ pin of described phase shift chip U1 is connected with two-stage low-pass filtering amplifying circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R16, the emitter of triode VT4 is connected with the base stage of triode VT5, the collector electrode of triode VT5 is as another output of system, and the negative pole of electric capacity C9 is connected with two-stage low-pass filtering amplifying circuit.
Described booster circuit is by transformer T1, be arranged on the inductance coil L1 on the former limit of transformer T1, be arranged on the inductance coil L2 of transformer T1 secondary, the diode D1 that N pole is connected with drive circuit, P pole is connected with drive circuit with the Same Name of Ends of inductance coil L2 respectively after polar capacitor C1, and N pole is connected with the P pole of diode D1, the thyristor D2 of P pole ground connection forms; The Same Name of Ends of described inductance coil L1 is connected with circuit of output terminal, the non-same polarity ground connection of inductance coil L2.
Described drive circuit is by driving chip U, the resistance R1 that one end is connected with the Same Name of Ends of inductance coil L2, the other end is connected with the ZCD pin of driving chip U, the electric capacity C2 that positive pole is connected with the COMP pin of driving chip U, negative pole is connected with two-stage low-pass filtering amplifying circuit, and one end forms with the resistance R3 that GD pin is connected, the other end is connected with treatment circuit of driving chip U; The VCC pin of described driving chip U is connected with the N pole of diode D1, MULK pin is connected with treatment circuit, GND pin ground connection, CS pin are connected with treatment circuit.
Described treatment circuit comprises: triode VT1, resistance R4, resistance R5, resistance R2 and diode D3, the P pole of described diode D3 is connected with the Same Name of Ends of inductance coil L1 and the collector electrode of triode VT1 respectively, its N pole is in turn through resistance R2, be connected with the emitter of triode VT1 after resistance R5 and resistance R4, the base stage of described triode VT1 is connected with resistance R3, emitter is connected with the CS pin of driving chip U, the tie point of resistance R4 and resistance R5 is connected with the MULK pin of driving chip U and two-stage low-pass filtering amplifying circuit simultaneously, the N pole of diode D3 is also connected with two-stage low-pass filtering amplifying circuit, the tie point of resistance R2 and resistance R5 is connected with the negative pole of polar capacitor C2 and two-stage low-pass filtering amplifying circuit simultaneously.
Described two-stage low-pass filtering amplifying circuit is by amplifier P1, amplifier P2, triode VT2, triode VT3, positive pole is connected with the tie point of resistance R5 with resistance R2, the polar capacitor C4 of minus earth, one end is connected with the normal phase input end of amplifier P1, the resistance R6 that the other end is connected with the positive pole of polar capacitor C4, positive pole is connected with amplifier P1 inverting input after resistance R7, the polar capacitor C3 that negative pole is connected with the negative pole of polar capacitor C4, be serially connected in the polar capacitor C5 between the output of amplifier P1 and inverting input, negative pole is connected with the output of amplifier P1, the polar capacitor C6 that positive pole is connected with the base stage of triode VT2, one end is connected with the collector electrode of triode VT2, the resistance R8 that the other end is connected with the emitter of triode VT3, positive pole is connected with the base stage of triode VT3 after resistance R9, the electric capacity C7 that negative pole is connected with the output of amplifier P1 and the VCC+ pin of phase shift chip U1 simultaneously, one end is connected with the positive pole of polar capacitor C7, the resistance R10 that the other end is connected with the inverting input of amplifier P2, the resistance R11 be in parallel with resistance R10, be serially connected in the polar capacitor C8 between the output of amplifier P2 and inverting input, and the resistance R12 be serially connected between the normal phase input end of amplifier P2 and output forms, the emitter of described triode VT2 is connected with the negative pole of polar capacitor C7, and the collector electrode of triode VT3 is connected with the normal phase input end of amplifier P2, and the output of amplifier P2 is connected with the negative pole of electric capacity C9.
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) the present invention adopts phase shift treatment circuit, and image processing system can be made to ensure while enlarged image signal, and signal is undistorted.
(2) the present invention is applied to the reliability and stability that face identification system can improve identification greatly, has ensured the safety of people.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of face image processing system of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, phase shift New Image treatment system of the present invention, comprise booster circuit, the drive circuit be connected with booster circuit, the treatment circuit be simultaneously connected with drive circuit with booster circuit, the two-stage low-pass filtering amplifying circuit be connected with treatment circuit output, and the phase shift treatment circuit be connected with two-stage low-pass filtering amplifying circuit.
Described phase shift treatment circuit is by phase shift chip U1, triode VT4, triode VT5, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R14 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R13, the polar capacitor C9 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R15, the polar capacitor C11 that negative pole is connected with the collector electrode of triode VT4, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the other end is as the potentiometer R16 of an output of system, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D4 that N pole is connected with the base stage of triode VT4, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D5 that N pole is connected with the emitter of triode VT5 forms, the VCC+ pin of described phase shift chip U1 is connected with two-stage low-pass filtering amplifying circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R16, the emitter of triode VT4 is connected with the base stage of triode VT5, the collector electrode of triode VT5 is as another output of system, and the negative pole of electric capacity C9 is connected with two-stage low-pass filtering amplifying circuit.Phase shift treatment circuit, image processing system can be made to ensure while enlarged image signal, and signal is undistorted.In order to ensure implementation result, described phase shift chip U1 is preferably LM741 integrated chip.
Described booster circuit is by transformer T1, be arranged on the inductance coil L1 on the former limit of transformer T1, be arranged on the inductance coil L2 of transformer T1 secondary, the diode D1 that N pole is connected with drive circuit, P pole is connected with drive circuit with the Same Name of Ends of inductance coil L2 respectively after polar capacitor C1, and N pole is connected with the P pole of diode D1, the thyristor D2 of P pole ground connection forms; The Same Name of Ends of described inductance coil L1 is connected with circuit of output terminal, the non-same polarity ground connection of inductance coil L2.
Described drive circuit is by driving chip U, the resistance R1 that one end is connected with the Same Name of Ends of inductance coil L2, the other end is connected with the ZCD pin of driving chip U, the electric capacity C2 that positive pole is connected with the COMP pin of driving chip U, negative pole is connected with two-stage low-pass filtering amplifying circuit, and one end forms with the resistance R3 that GD pin is connected, the other end is connected with treatment circuit of driving chip U; The VCC pin of described driving chip U is connected with the N pole of diode D1, MULK pin is connected with treatment circuit, GND pin ground connection, CS pin are connected with treatment circuit.
Described treatment circuit comprises: triode VT1, resistance R4, resistance R5, resistance R2 and diode D3, the P pole of described diode D3 is connected with the Same Name of Ends of inductance coil L1 and the collector electrode of triode VT1 respectively, its N pole is in turn through resistance R2, be connected with the emitter of triode VT1 after resistance R5 and resistance R4, the base stage of described triode VT1 is connected with resistance R3, emitter is connected with the CS pin of driving chip U, the tie point of resistance R4 and resistance R5 is connected with the MULK pin of driving chip U and two-stage low-pass filtering amplifying circuit simultaneously, the N pole of diode D3 is also connected with two-stage low-pass filtering amplifying circuit, the tie point of resistance R2 and resistance R5 is connected with the negative pole of polar capacitor C2 and two-stage low-pass filtering amplifying circuit simultaneously.
Described two-stage low-pass filtering amplifying circuit is by amplifier P1, amplifier P2, triode VT2, triode VT3, positive pole is connected with the tie point of resistance R5 with resistance R2, the polar capacitor C4 of minus earth, one end is connected with the normal phase input end of amplifier P1, the resistance R6 that the other end is connected with the positive pole of polar capacitor C4, positive pole is connected with amplifier P1 inverting input after resistance R7, the polar capacitor C3 that negative pole is connected with the negative pole of polar capacitor C4, be serially connected in the polar capacitor C5 between the output of amplifier P1 and inverting input, negative pole is connected with the output of amplifier P1, the polar capacitor C6 that positive pole is connected with the base stage of triode VT2, one end is connected with the collector electrode of triode VT2, the resistance R8 that the other end is connected with the emitter of triode VT3, positive pole is connected with the base stage of triode VT3 after resistance R9, the electric capacity C7 that negative pole is connected with the output of amplifier P1 and the VCC+ pin of phase shift chip U1 simultaneously, one end is connected with the positive pole of polar capacitor C7, the resistance R10 that the other end is connected with the inverting input of amplifier P2, the resistance R11 be in parallel with resistance R10, be serially connected in the polar capacitor C8 between the output of amplifier P2 and inverting input, and the resistance R12 be serially connected between the normal phase input end of amplifier P2 and output forms, the emitter of described triode VT2 is connected with the negative pole of polar capacitor C7, and the collector electrode of triode VT3 is connected with the normal phase input end of amplifier P2, and the output of amplifier P2 is connected with the negative pole of electric capacity C9.
As mentioned above, just well the present invention can be realized.
Claims (5)
1. a phase shift New Image treatment system, it is characterized in that: comprise booster circuit, the drive circuit be connected with booster circuit, the treatment circuit be simultaneously connected with drive circuit with booster circuit, the two-stage low-pass filtering amplifying circuit be connected with treatment circuit output, and the phase shift treatment circuit be connected with two-stage low-pass filtering amplifying circuit, described phase shift treatment circuit is by phase shift chip U1, triode VT4, triode VT5, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R14 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R13, the polar capacitor C9 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R15, the polar capacitor C11 that negative pole is connected with the collector electrode of triode VT4, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the other end is as the potentiometer R16 of an output of system, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D4 that N pole is connected with the base stage of triode VT4, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D5 that N pole is connected with the emitter of triode VT5 forms, the VCC+ pin of described phase shift chip U1 is connected with two-stage low-pass filtering amplifying circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R16, the emitter of triode VT4 is connected with the base stage of triode VT5, the collector electrode of triode VT5 is as another output of system, and the negative pole of electric capacity C9 is connected with two-stage low-pass filtering amplifying circuit.
2. a kind of phase shift New Image treatment system according to claim 1, it is characterized in that: described booster circuit is by transformer T1, be arranged on the inductance coil L1 on the former limit of transformer T1, be arranged on the inductance coil L2 of transformer T1 secondary, the diode D1 that N pole is connected with drive circuit, P pole is connected with drive circuit with the Same Name of Ends of inductance coil L2 respectively after polar capacitor C1, and N pole is connected with the P pole of diode D1, the thyristor D2 of P pole ground connection forms; The Same Name of Ends of described inductance coil L1 is connected with circuit of output terminal, the non-same polarity ground connection of inductance coil L2.
3. a kind of phase shift New Image treatment system according to claim 2, it is characterized in that: described drive circuit is by driving chip U, the resistance R1 that one end is connected with the Same Name of Ends of inductance coil L2, the other end is connected with the ZCD pin of driving chip U, the electric capacity C2 that positive pole is connected with the COMP pin of driving chip U, negative pole is connected with two-stage low-pass filtering amplifying circuit, and one end forms with the resistance R3 that GD pin is connected, the other end is connected with treatment circuit of driving chip U; The VCC pin of described driving chip U is connected with the N pole of diode D1, MULK pin is connected with treatment circuit, GND pin ground connection, CS pin are connected with treatment circuit.
4. a kind of phase shift New Image treatment system according to claim 3, is characterized in that: described treatment circuit comprises: triode VT1, resistance R4, resistance R5, resistance R2 and diode D3, the P pole of described diode D3 is connected with the Same Name of Ends of inductance coil L1 and the collector electrode of triode VT1 respectively, its N pole is in turn through resistance R2, be connected with the emitter of triode VT1 after resistance R5 and resistance R4, the base stage of described triode VT1 is connected with resistance R3, emitter is connected with the CS pin of driving chip U, the tie point of resistance R4 and resistance R5 is connected with the MULK pin of driving chip U and two-stage low-pass filtering amplifying circuit simultaneously, the N pole of diode D3 is also connected with two-stage low-pass filtering amplifying circuit, the tie point of resistance R2 and resistance R5 is connected with the negative pole of polar capacitor C2 and two-stage low-pass filtering amplifying circuit simultaneously.
5. a kind of phase shift New Image treatment system according to claim 4, it is characterized in that: described two-stage low-pass filtering amplifying circuit is by amplifier P1, amplifier P2, triode VT2, triode VT3, positive pole is connected with the tie point of resistance R5 with resistance R2, the polar capacitor C4 of minus earth, one end is connected with the normal phase input end of amplifier P1, the resistance R6 that the other end is connected with the positive pole of polar capacitor C4, positive pole is connected with amplifier P1 inverting input after resistance R7, the polar capacitor C3 that negative pole is connected with the negative pole of polar capacitor C4, be serially connected in the polar capacitor C5 between the output of amplifier P1 and inverting input, negative pole is connected with the output of amplifier P1, the polar capacitor C6 that positive pole is connected with the base stage of triode VT2, one end is connected with the collector electrode of triode VT2, the resistance R8 that the other end is connected with the emitter of triode VT3, positive pole is connected with the base stage of triode VT3 after resistance R9, the electric capacity C7 that negative pole is connected with the output of amplifier P1 and the VCC+ pin of phase shift chip U1 simultaneously, one end is connected with the positive pole of polar capacitor C7, the resistance R10 that the other end is connected with the inverting input of amplifier P2, the resistance R11 be in parallel with resistance R10, be serially connected in the polar capacitor C8 between the output of amplifier P2 and inverting input, and the resistance R12 be serially connected between the normal phase input end of amplifier P2 and output forms, the emitter of described triode VT2 is connected with the negative pole of polar capacitor C7, and the collector electrode of triode VT3 is connected with the normal phase input end of amplifier P2, and the output of amplifier P2 is connected with the negative pole of electric capacity C9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410695940.7A CN104410770A (en) | 2014-11-26 | 2014-11-26 | Novel phase-shift image processing system |
| CN201510317287.5A CN104916020A (en) | 2014-11-26 | 2015-06-10 | Novel phase-shifting type image processing system based on common source amplifying circuit |
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| CN201410695940.7A CN104410770A (en) | 2014-11-26 | 2014-11-26 | Novel phase-shift image processing system |
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| CN201510317287.5A Pending CN104916020A (en) | 2014-11-26 | 2015-06-10 | Novel phase-shifting type image processing system based on common source amplifying circuit |
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| CN201510317287.5A Pending CN104916020A (en) | 2014-11-26 | 2015-06-10 | Novel phase-shifting type image processing system based on common source amplifying circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104683659A (en) * | 2015-03-31 | 2015-06-03 | 宁波摩米创新工场电子科技有限公司 | Audion common emitter amplifying circuit-based high-precision image processing system |
| CN104916020A (en) * | 2014-11-26 | 2015-09-16 | 成都冠深科技有限公司 | Novel phase-shifting type image processing system based on common source amplifying circuit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105507737A (en) * | 2015-12-22 | 2016-04-20 | 成都雷纳斯科技有限公司 | High-sensitivity intelligent anti-theft system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2003078365A (en) * | 2001-09-05 | 2003-03-14 | Sony Corp | Operational amplifier circuit, capacitance detector and fingerprint collation equipment |
| CN204302994U (en) * | 2014-11-18 | 2015-04-29 | 成都措普科技有限公司 | A kind of New Image treatment system |
| CN104408411A (en) * | 2014-11-18 | 2015-03-11 | 成都措普科技有限公司 | Novel image processing system |
| CN104410770A (en) * | 2014-11-26 | 2015-03-11 | 成都创图科技有限公司 | Novel phase-shift image processing system |
| CN104410942A (en) * | 2014-11-26 | 2015-03-11 | 成都创图科技有限公司 | Phase shift type audio processing system by low-pass filtering and amplification |
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2014
- 2014-11-26 CN CN201410695940.7A patent/CN104410770A/en active Pending
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- 2015-06-10 CN CN201510317287.5A patent/CN104916020A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916020A (en) * | 2014-11-26 | 2015-09-16 | 成都冠深科技有限公司 | Novel phase-shifting type image processing system based on common source amplifying circuit |
| CN104683659A (en) * | 2015-03-31 | 2015-06-03 | 宁波摩米创新工场电子科技有限公司 | Audion common emitter amplifying circuit-based high-precision image processing system |
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Application publication date: 20150311 |