CN104409956A - Multiple-microwave local oscillator source generation device based on injection locking quantum dot mode-locked laser - Google Patents
Multiple-microwave local oscillator source generation device based on injection locking quantum dot mode-locked laser Download PDFInfo
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- CN104409956A CN104409956A CN201410707597.3A CN201410707597A CN104409956A CN 104409956 A CN104409956 A CN 104409956A CN 201410707597 A CN201410707597 A CN 201410707597A CN 104409956 A CN104409956 A CN 104409956A
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Abstract
The invention discloses a multiple-microwave local oscillator source generation device based on an injection locking quantum dot mode-locked laser. The multiple-microwave local oscillator source generation device comprises a narrow linewidth laser, an optical beam splitter, a first optical isolator, a second optical isolator, a first quantum dot mode-locked laser, a second quantum dot mode-locked laser, a beam combiner, a wavelength division multiplexer and a high-speed detector array, wherein an input port 1 of the optical beam splitter is connected with the output end of the narrow linewidth laser; the input end of the first optical isolator is connected with an output port 2 of the optical beam splitter; the input end of the second optical isolator is connected with an output port 3 of the optical beam splitter; the input end of the first quantum dot mode-locked laser is connected with the output end of the first optical isolator; the input end of the second quantum dot mode-locked laser is connected with the output end of the second optical isolator; an input port 1 of the beam combiner is connected with the output end of the first quantum dot mode-locked laser; the input end of the wavelength division multiplexer is connected with the output end of the beam combiner; the input end of the high-speed detector array is connected with the output end of the wavelength division multiplexer; the high-speed detector array is used for performing photovoltaic conversion on wave combining optical signals from different channels and outputting electrical signals and microwave signals with different frequencies.
Description
Technical field
The invention belongs to Microwave photonics field, is a kind of many microwave local oscillations based on microwave photon source generating device in particular.
Background technology
Current, wideband satellite communication and optical fiber communication, radio communication are listed as the three large communication technologys, play safely important supporting role to national economy and national information.Under the traction of the huge traffic capacity demands of user, satellite communication needs multicarrier frequency conversion, therefore needs many microwave local oscillators.In addition, in the channelized receiver of the electric spatial frequency spectrum detecting of net, the many local vibration sources of high-performance are also needed.
In China, satellite communication system is China three one of communication pillar industry greatly, and lead with China Satcom at present, the satellite of serving in-orbit has 11, and subsequent satellites many will put into effect.Current, satellite communication is to multiband, broadband future development.And traditional satellite communication repeater system faces a severe challenge and comprises following three aspects:
1. bandwidth problem
Due to the large data traffic requirement, particularly military requirement such as radio and television, transfer of data, digital broadband multimedia, mobile Internet, need raising carrier frequency badly, increase bandwidth, improve message capacity.
2. load weight and power problems
Because future communications satellite needs compatible S, C, X, Ku, K, Ka many frequency ranges, therefore repeater structures is complicated, adds system weight and power consumption.
3. electromagnetic interference problem
The use of a large amount of electronic devices and components, increases electromagnetic interference and signal cross-talk between system.
Based on the demand, producing stable Reflection Optical Thin Film frequency comb is a current large research puzzle.Optical frequency com main at present produces scheme and is mainly limited to cascaded modulator generation, based on repetition frequency shift method and the generation of silicon-based micro ring structure etc.But existence and stability problem in such scheme all more or less, must need adding of multiple microwave source in cascaded modulator scheme, and the drifting problem of the bias point of modulator; Mainly produce based on acousto-optic modulator based on the scheme repeating frequency displacement, generally in MHz magnitude, be difficult to meet communication band demand; And be also in laboratory stage at present based on the scheme of silicon-based micro ring structure, be difficult to meet current actual demand.
Summary of the invention
The object of the invention is to, a kind of many microwave local oscillations source generating device based on injection locking quantum dot mode-locked laser is provided, it produces based on quantum dot mode-locked laser technology the device stablizing many local vibration sources, overcomes the difficult problem of conventional electronics method in bandwidth, weight, volume, electromagnetic compatibility etc.
A kind of many microwave local oscillations source generating device based on injection locking quantum dot mode-locked laser disclosed by the invention, comprising:
One narrow linewidth laser, it is for providing relevant seed light source;
One beam splitter, its input port 1 is connected with the output of narrow linewidth laser, for described seed light source is divided into two-way;
One first optical isolator, its input is connected with the output port 2 of beam splitter, for the light output by beam splitter;
One second optical isolator, its input is connected with the output port 3 of beam splitter, for the light output by beam splitter;
One first quantum dot mode-locked laser, its input is connected with the output of the first optical isolator, for providing the first Reflection Optical Thin Film frequency comb;
One second quantum dot mode-locked laser, its input is connected with the output of the first optical isolator, for providing the second Reflection Optical Thin Film frequency comb;
One bundling device, its input port 1 is connected with the output of the first quantum dot mode-locked laser, and the spectrum for first, second Reflection Optical Thin Film frequency comb described being exported carries out conjunction ripple and exports;
One wavelength division multiplexer, its input is connected with the output of bundling device, and for the described conjunction glistening light of waves is carried out frequency-division section output, the light signal that frequency is close carries out cochannel output;
One high speed detector array, its input is connected with the output of wavelength division multiplexer, and it is for carrying out opto-electronic conversion by the conjunction wave optical signal of described different channels, and the signal of telecommunication microwave signal realizing different frequency exports.
The invention has the beneficial effects as follows, it mainly utilizes narrow linewidth laser as primary laser source, the Reflection Optical Thin Film frequency comb of injection locking based on the first quantum dot mode-locked laser and the Reflection Optical Thin Film frequency comb based on the second quantum dot mode-locked laser respectively, by the minute differences at the Reflection Optical Thin Film frequency comb based on the first quantum dot mode-locked laser and the Reflection Optical Thin Film frequency comb repetition rate interval based on the second quantum dot mode-locked laser, and utilize point channel output effect of wavelength division multiplexer, obtain from two comb of the Reflection Optical Thin Film frequency comb based on the first quantum dot mode-locked laser with the Reflection Optical Thin Film frequency comb based on the second quantum dot mode-locked laser in different channels, photodetection is carried out through photodetector, obtain the microwave telecommunication number of different frequency.Realize supporting the frequency conversion of S, C, X, Ku, K, Ka multiband multi-channel rf signal batch and the New Satellite communication repeater system exchanged flexibly.
Accompanying drawing explanation
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail, wherein:
Fig. 1 produces many local vibration sources installation drawing based on quantum dot mode-locked laser in the present invention;
Fig. 2 is the schematic diagram that in the present invention, the different Reflection Optical Thin Film frequency comb in interval produces many local vibration sources;
Embodiment
Refer to shown in Fig. 1, the invention provides a kind of many microwave local oscillations source generating device based on injection locking quantum dot mode-locked laser, comprising:
One narrow linewidth laser 1, it is for providing relevant seed light source, this narrow linewidth laser 1 is semiconductor laser for tunable wavelength form or fiber laser, i.e. its light output wavelength and first, second quantum dot mode-locked laser 5,6 (chatting afterwards) frequency alignment wherein;
One beam splitter 2, its input port 1 is connected with the output of narrow linewidth laser 1, for described seed light source is divided into two-way, this beam splitter 2 can be space structure beam splitter, also can be the beam splitter of optical fiber structure beam splitter or waveguiding structure;
One first optical isolator 3, its input is connected with the output port 2 of beam splitter 2, for the light output by beam splitter 2;
One second optical isolator 4, its input is connected with the output port 3 of beam splitter 2, for the light output by beam splitter 2;
One first quantum dot mode-locked laser 5, its input is connected with the output of the first optical isolator 3, for providing the first Reflection Optical Thin Film frequency comb;
One second quantum dot mode-locked laser 6, its input is connected with the output of the first optical isolator 4, for providing the second Reflection Optical Thin Film frequency comb;
The object of first, second optical isolator 3,4 wherein said mainly realizes narrow linewidth laser 1 unidirectional injection quantum dot mode-locked laser 5,6, realizes the injection locking of quantum dot mode-locked laser 5,6; Wherein first, second quantum dot mode-locked laser 5,6 goes out optical mode for two ends, and namely chamber both ends of the surface are all coated with high transmission film.This first quantum dot mode-locked laser 5 is different with the repetition rate of the second quantum dot mode-locked laser 6.The light frequency that wherein narrow linewidth laser 1 exports passes through the same frequency of first, second quantum dot mode-locked laser 5,6 of first, second optical isolator 3,4 difference injection locking; The long frequency interval size determining its output spectrum in chamber due to first, second quantum dot mode-locked laser 5,6, thus the fine difference designing first, second quantum dot mode-locked laser 5,6 chamber long causes the comb interval of two Reflection Optical Thin Film frequency comb on frequency spectrum to there is certain amounts of frequency offset f
0, frequency spectrum finds the comb f that both light frequencies are consistent
s, by the output light frequency of narrow linewidth laser 1 be tuned to this frequency location f
s, through narrow linewidth laser 1 first, second quantum dot mode-locked laser 5,6 of injection locking respectively, thus obtain two high Reflection Optical Thin Film frequency comb of stability.
One bundling device 7, its two input port be connected with the output of first, second quantum dot mode-locked laser 5,6 respectively, the spectrum for described first, second quantum dot mode-locked laser 5,6 being exported carries out the output of conjunctions ripple; This bundling device 7 can be space structure combiner device, also can be the combiner device of optical fiber structure bundling device or waveguiding structure.
One wavelength division multiplexer 8, its input is connected with the output of bundling device 7, for the described conjunction glistening light of waves is carried out frequency-division section output, the light signal that frequency is close carries out cochannel output, this wavelength division multiplexer 8 comprises the different output channel of multiple frequency, and each output channel exports the light closing corresponding frequencies interval in the glistening light of waves; The channel output that this wavelength division multiplexer 8 does not coexist different according to the frequency interval of receiving optical signals exports, and this wavelength division multiplexer is used for rearranging output to light path according to frequency interval; Wherein, frequency interval is decided by the comb frequency interval size of two quantum dot mode-locked lasers 5,6, this wavelength division multiplexer 8 can based on array wave-guide grating structure, also can based on optical fiber grating structure, or based on F-P filter construction.
The first quantum dot mode-locked laser 5 that wherein two comb frequency intervals are different and the second quantum dot mode-locked laser 6 to be coupled input light wavelength division multiplexing 8 through combiner device 7, difference frequency beat frequency is carried out by the different comb of different optical frequency comb, produce the multiple microwave frequencies meeting light comb difference on the frequency, f
0, f
0+ (f
1-f
2), f
0+ 2 (f
1-f
2), f
0+ 3 (f
1-f
2) ..., f
0+ n (f
1-f
2), realize supporting the frequency conversion of S, C, X, Ku, K, Ka multiband multi-channel rf signal batch and the New Satellite communication repeater system exchanged flexibly.
One high speed detector array 9, its input is connected with the output of wavelength division multiplexer 8, and it is for carrying out opto-electronic conversion by the conjunction wave optical signal of described different channels, and the signal of telecommunication microwave signal realizing different frequency exports; Each photodetector in this photodetector array 9 is connected from the different passages in wavelength division multiplexer 8, for detecting the modulated light signal of different frequency.This photodetector array 9 carries out opto-electronic conversion to the light signal received, the signal of telecommunication scope that different detector exports is different, to produce Multiband microwave signal, this photodetector array 9 can be indium phosphide also can be silica-base material, bandwidth is more wide better.
Fig. 2 gives in the present invention and produces optical frequency com based on quantum dot mode-locked laser 5,6 and enter by two frequency comb that comb interval is different the schematic diagram that photodetector beat frequency produces many microwave local oscillators.As shown in Figure 2, produce optical frequency com based on quantum dot mode-locked laser 5,6, carried out two Reflection Optical Thin Film frequency comb of injection locking same light frequency by narrow-linewidth laser 1, produce two metastable optical frequency coms.The different comb of the optical frequency com utilizing two frequency intervals different carries out difference frequency beat frequency, produce Multiband microwave signal, thus realize the forwarding of multiband multi-channel rf signal, the demand of New Satellite communication system can be met well, and can be good at being applied in dense wavelength division multiplexing system.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1., based on many microwave local oscillations source generating device of injection locking quantum dot mode-locked laser, comprising:
One narrow linewidth laser, it is for providing relevant seed light source;
One beam splitter, its input port 1 is connected with the output of narrow linewidth laser, for described seed light source is divided into two-way;
One first optical isolator, its input is connected with the output port 2 of beam splitter, for the light output by beam splitter;
One second optical isolator, its input is connected with the output port 3 of beam splitter, for the light output by beam splitter;
One first quantum dot mode-locked laser, its input is connected with the output of the first optical isolator, for providing the first Reflection Optical Thin Film frequency comb;
One second quantum dot mode-locked laser, its input is connected with the output of the first optical isolator, for providing the second Reflection Optical Thin Film frequency comb;
One bundling device, its input port 1 is connected with the output of the first quantum dot mode-locked laser, and the spectrum for first, second Reflection Optical Thin Film frequency comb described being exported carries out conjunction ripple and exports;
One wavelength division multiplexer, its input is connected with the output of bundling device, and for the described conjunction glistening light of waves is carried out frequency-division section output, the light signal that frequency is close carries out cochannel output;
One high speed detector array, its input is connected with the output of wavelength division multiplexer, and it is for carrying out opto-electronic conversion by the conjunction wave optical signal of described different channels, and the signal of telecommunication microwave signal realizing different frequency exports.
2. as claimed in claim 1 based on many microwave local oscillations source generating device of quantum dot mode-locked laser, wherein said narrow linewidth laser is semiconductor laser for tunable wavelength form or fiber laser, i.e. its light output wavelength and first, second quantum dot mode-locked laser frequency alignment wherein.
3., as claimed in claim 2 based on many microwave local oscillations source generating device of injection locking quantum dot mode-locked laser, first, second quantum dot mode-locked laser of wherein said quantum is that two ends go out optical mode, and namely chamber both ends of the surface are all coated with high transmission film.
4., as claimed in claim 3 based on many microwave local oscillations source generating device of injection locking quantum dot mode-locked laser, wherein said first quantum dot mode-locked laser is different with the repetition rate of the second quantum dot mode-locked laser.
5., as claimed in claim 1 based on many microwave local oscillations source generating device of injection locking quantum dot mode-locked laser, the light frequency that wherein narrow linewidth laser exports passes through the same frequency of first, second quantum dot mode-locked laser of first, second optical isolator difference injection locking.
6. as claimed in claim 1 based on many microwave local oscillations source generating device of injection locking quantum dot mode-locked laser, wherein said wavelength division multiplexer comprises the different output channel of multiple frequency, and each output channel exports the light closing corresponding frequencies interval in the glistening light of waves.
7. as claimed in claim 6 based on many microwave local oscillations source generating device of injection locking quantum dot mode-locked laser, each photodetector wherein in photodetector array is connected from the different passages in wavelength division multiplexer, for detecting the modulated light signal of different frequency.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110365401A (en) * | 2019-08-14 | 2019-10-22 | 上海卫星工程研究所 | Telecommunication satellite retransmission unit and its retransmission method based on Microwave photonics |
| WO2021224485A1 (en) * | 2020-05-08 | 2021-11-11 | Universiteit Gent | Semiconductor mode-locked laser dual comb system |
| CN114024616A (en) * | 2021-10-22 | 2022-02-08 | 北京邮电大学 | Multi-path frequency conversion structure realized by polarization state independent modulation |
| CN114244444A (en) * | 2021-12-16 | 2022-03-25 | 武汉光谷信息光电子创新中心有限公司 | On-chip device and microwave signal generation method thereof |
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| US5379309A (en) * | 1993-08-16 | 1995-01-03 | California Institute Of Technology | High frequency source having heterodyned laser oscillators injection-locked to a mode-locked laser |
| US20030197918A1 (en) * | 2002-04-17 | 2003-10-23 | Hrl Laboratories, Llc | Integrated optical circuit for effecting stable injection locking of laser diode pairs used for microwave signal synthesis |
| CN103490823A (en) * | 2013-09-22 | 2014-01-01 | 中国科学院半导体研究所 | Multi-microwave local oscillation source generating device based on microwave photons |
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| US5379309A (en) * | 1993-08-16 | 1995-01-03 | California Institute Of Technology | High frequency source having heterodyned laser oscillators injection-locked to a mode-locked laser |
| US20030197918A1 (en) * | 2002-04-17 | 2003-10-23 | Hrl Laboratories, Llc | Integrated optical circuit for effecting stable injection locking of laser diode pairs used for microwave signal synthesis |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110365401A (en) * | 2019-08-14 | 2019-10-22 | 上海卫星工程研究所 | Telecommunication satellite retransmission unit and its retransmission method based on Microwave photonics |
| WO2021224485A1 (en) * | 2020-05-08 | 2021-11-11 | Universiteit Gent | Semiconductor mode-locked laser dual comb system |
| CN114024616A (en) * | 2021-10-22 | 2022-02-08 | 北京邮电大学 | Multi-path frequency conversion structure realized by polarization state independent modulation |
| CN114244444A (en) * | 2021-12-16 | 2022-03-25 | 武汉光谷信息光电子创新中心有限公司 | On-chip device and microwave signal generation method thereof |
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Effective date of registration: 20210713 Address after: 100000 20213, 145 Tongle Road, nandulehe Town, Pinggu District, Beijing (cluster registration) Patentee after: Beijing Jialun Technology Co.,Ltd. Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee before: Institute of Semiconductors, Chinese Academy of Sciences Effective date of registration: 20210713 Address after: 255086 Building 9, MEMS Industrial Park, 158 Zhongrun Avenue, high tech Zone, Zibo City, Shandong Province Patentee after: Shandong zhongkejilian Optoelectronic Integrated Technology Research Institute Co.,Ltd. Address before: 100000 20213, 145 Tongle Road, nandulehe Town, Pinggu District, Beijing (cluster registration) Patentee before: Beijing Jialun Technology Co.,Ltd. |