CN104407033A - Preparation method of thin film chip gas-sensor - Google Patents
Preparation method of thin film chip gas-sensor Download PDFInfo
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- CN104407033A CN104407033A CN201410636884.XA CN201410636884A CN104407033A CN 104407033 A CN104407033 A CN 104407033A CN 201410636884 A CN201410636884 A CN 201410636884A CN 104407033 A CN104407033 A CN 104407033A
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Abstract
The invention belongs to the technical field of gas sensitive material and elements and specifically relates to a preparation method of a thin film chip gas-sensor. The preparation method comprises the following steps: Step 1, preparing a substrate material, firstly plating a bottom electrode on the surface of the substrate material, and then plating a semiconductor material thin-layer to obtain a semiconductor gas-sensitive element; Step 2, plating a disordered metallic film system on the semiconductor material thin-layer, and finally plating a point electrode; Step 3, arranging an UV lamp above the semiconductor material thin-layer of the semiconductor gas-sensitive element, and fixing the UV lamp and the semiconductor gas-sensitive element in a sensor housing with vent holes. By an UV-irradiation assistive technology, sensitivity of the semiconductor gas sensor is raised, and operating temperature of the sensor is reduced.
Description
Technical field
The invention belongs to gas sensitive and Element Technology field, specifically relate to a kind of preparation method of thin film chip gas sensor.
Background technology
Gas sensor is a kind of converter certain gas volume fraction being changed into corresponding electric signal, current existing gas sensor is of a great variety, by gas sensitive used and gas-sensitive property difference thereof, semiconductor-type, solid electrolyte formula, electric chemical formula, catalytic combustion type etc. can be divided into.
Traditional semiconductor resistance-type gas sensor often adopts metal oxide (as SnO
2, ZnO, TiO
2deng) be gas sensitive, have metering system simple, highly sensitive, respond the features such as fast, easy to operate, good portability, cost are low, but such gas sensor must be heated to higher working temperature (200 ~ 600 DEG C) in actual applications, power consumption is larger, reduce the portability of sensor, but also add potential safety hazard, make it apply and be very limited.In recent years, utilize the sp act of nano material to realize focus and emphasis that room temperature air sensor is just becoming research, has also emerged the Novel Room Temperature gas sensitives such as Graphene, carbon nano-tube, silicon nanowires while traditional gas sensitive is made the special constructions such as nano wire, nanotube, nanometer rods, nanobelt.
In addition, the Large ratio surface sum film formation at low temp process characteristic that in view of the tempting application prospect of flexible device, existing researcher utilizes Graphene, carbon nano-tube has, PET, PI even paper substrates successfully prepare room temperature flexible gas sensor.
Such as, graphene oxide inkjet printing successfully realizes under room temperature NO by masschusetts, u.s.a university Luo Weier branch school in 2009 report on PET substrate
2detection, unfortunately need can recover under the irradiation of 254nm ultraviolet light, significantly reduce the portable performance of sensor; Within 2012, this this seminar reports carbon nano-tube inkjet printing film forming on paper again, to the NO of 100ppm under room temperature
2and Cl
2sensitivity be respectively 2.4 and 2.7, but its long response and release time (3-5 minute, 7-12 minute) are still unfavorable for actual monitoring.
Colloidal state quantum dot adopts colloid chemistry methods preparation, is that a kind of organic ligand molecule wraps up the surface of the quantum dot grown to control the wet chemical method of particle aggregation.Compared with common nano material, having that size is controlled and homogeneity good, activity is high, physicochemical characteristic is controlled, be easy to finishing, room temperature film-forming and the feature such as flexible substrate compatibility is good, is the new type ideal material of preparation room tenderness gas sensor.The research of colloidal state quantum dot gas sensor can trace back to calendar year 2001 the earliest, and researcher is by commercially available Sb doping SnO
2colloidal particles suspending liquid in the mode of spin coating at SiO
2film forming on substrate, produce resistance-type methanol gas sensor, working temperature is low to moderate 150 DEG C.But this device still needs in high temperature (500 DEG C) thermal treatment, cause particle size in real devices up to tens nanometer, be unfavorable for the feature giving full play to colloidal state quantum dot gas sensitive.Afterwards, in the research of colloidal state quantum dot gas sensor, the main potpourri adopting colloidal state quantum dot and organic polymer is gas sensitive, and enable at room temperature film forming, therefore the particle size of colloidal state quantum dot obtains good maintenance.But, owing to being dispersed in the low organic polymer molecules network of conductivity, colloidal state quantum dot to the adsorption activity of gas and between electric transmission be restricted, cause such sensor air-sensitive performance at room temperature unsatisfactory, therefore working temperature is so higher.In addition, except resistance-type gas sensor, the room temperature air sensor utilizing colloidal state quantum dot light photoluminescence (PL) to change also receives the concern of researcher, but the latter cannot compare favourably with resistance-type gas sensor in portability.
Application number 201310634216.9 discloses kind semiconductor resistance-type gas sensor and preparation method thereof.Preparation method comprises the steps: (1) by semiconductor colloidal state quantum dot solution is coated in and is printed in the dielectric substrate of electrode, makes its homogeneous film formation; (2) with short chain ligand solution process quantum dot film; (3) remaining short chain part and accessory substance thereof is removed; (4) repeatedly repeated execution of steps (1), to step (3), obtains the semiconductor colloidal state quantum dot film with desired thickness, completes the preparation of gas sensor.In said method, also can direct film forming on an insulating substrate, the semiconductor colloidal state quantum dot film in the end obtained prepares electrode.Gas sensor comprises dielectric substrate, electrode and gas sensing layer, and gas sensing layer is semiconductor colloidal state quantum dot film.When for detecting sensitive temperature lower hazardous gas, the insufficient sensitivity of this gas sensor is high.
Application number 201410285080.X discloses a kind of thin film chip gas sensor and preparation method thereof.Chip of the present invention comprises one block of backing material, first hearth electrode is plated on the surface of this backing material, plate thin layers of semiconductor material again, be coated with randomness noble metal film system again, finally plate point electrode, total is placed in the box closed of a single radial cut, when gas passes through blind boxes, in noble metal system as under the effect of catalyzer, catalytic reaction is there is in gas in metal surface, the energy transferring of releasing is to the electronics in metal, there is in metal high-octane electronic transition and form electric current through the interface of metal and semiconductor, utilize the size of sensed current signal and relatively change the detection realizing certain gas and content.When for detecting sensitive temperature lower hazardous gas, when lower temperature, the insufficient sensitivity of the gas sensor that the method obtains is high.
Summary of the invention
The object of the present invention is to provide a kind of preparation method improving the sensitivity of sensor, the gas sensor of reduction senor operating temperature.
To achieve these goals, technical scheme of the present invention is:
A preparation method for thin film chip gas sensor, comprises the following steps:
Step one, preparation one block of backing material, first plate hearth electrode on the surface of this backing material, then plating half
Conductor material thin layer, obtains semiconductor gas sensor;
Step 2, on thin layers of semiconductor material, be coated with unordered type metal film system again, finally plate point electrode;
Step 3, uviol lamp is set above the semiconductor material thin film layer of semiconductor gas sensor, uviol lamp, semiconductor gas sensor are fixed on and are provided with in the sensor housing of air hole;
Described substrate is optional the silicon chip of silicon dioxide oxide layer or glass sheet or sheet metal; When selecting substrate process, process substrate, disposal route is corrosion, ion implantation, original position etching and growth Seed Layer.
The method of described growth Seed Layer is magnetron sputtering or molecular beam epitaxy or electrochemical deposition.
The metal material of described hearth electrode is Ti or Al.
Described semiconductor material is Si, Ge, GaAs, ZnO, TiO
2, choose any one kind of them in GaN and SiC.
The preparation method of described semiconductor material adopts any one in sol-gal process, hydrolysis methods, magnetron sputtering method, vacuum vapor deposition method, electron-beam vapor deposition method, self-assembly method and thing phase sedimentation.
The material of described unordered type metal film system is any one in Pt, Au, Pd, Cu, Cr, Ni.
The object preparing point electrode forms good contact, and described point electrode material is Ag or Ti.
The power of described uviol lamp is 10 ~ 50mW.
The beneficial effect of the gas sensor utilizing the inventive method to obtain is:
Under the present invention utilizes UV-irradiation, photocatalysis is carried out to Nanometer Semiconductor Films, improve the sensitivity of Nano semiconductor gas sensor, reduce senor operating temperature, except for except the detection of common gases, the detection of inflammable gas can also be used for, supplement the deficiency that other sensors can not detect in explosion limits, generally be applicable to petrochemical plant, shipyard, the monitoring of inflammable gas in mine tunnel and kitchen, bathroom and warning.The gas sensor that gas sensor method of the present invention obtains is highly stable under common ambient.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.In addition, if below in described each embodiment of the present invention involved technical characteristic do not form conflict each other and just can mutually combine.
Embodiment one,
A preparation method for thin film chip gas sensor, comprises the following steps:
The preparation of step one, substrate, first plates hearth electrode on the surface of this backing material, then plates thin layers of semiconductor material, and described semiconductor material is Si, Ge, GaAs, ZnO, TiO
2, choose any one kind of them in GaN and SiC.
Obtain semiconductor gas sensor;
Step 2, on thin layers of semiconductor material, be coated with unordered type metal film system again, finally plate point electrode;
Step 3, uviol lamp is set above the semiconductor material thin film layer of semiconductor gas sensor, uviol lamp, semiconductor gas sensor are fixed on and are provided with in the sensor housing of air hole; The power of described uviol lamp is 10 ~ 50mW.
Embodiment two, embodiment three are substantially identical with embodiment one, and special feature when selecting substrate process, processes substrate as follows, and disposal route is corrosion, ion implantation, original position etching and growth Seed Layer.The method of described growth Seed Layer is magnetron sputtering or molecular beam epitaxy or electrochemical deposition.
Embodiment two,
A preparation method for thin film chip gas sensor, comprises the following steps:
The preparation of step one, substrate, employing silicon chip is the cleaning process of substrate, silicon chip: the ultrasonic 10min of acetone, ultrapure water ultrasonic 10min, and high pure nitrogen dries up, 800 DEG C, baking oven baking 15min; First plate hearth electrode on the surface of this backing material, then plate thin layers of semiconductor material, described semiconductor material is Si, Ge, GaAs, ZnO, TiO
2, choose any one kind of them in GaN and SiC.Obtain semiconductor gas sensor;
Step 2, on thin layers of semiconductor material, be coated with unordered type metal film system again, finally plate point electrode;
Step 3, uviol lamp is set above the semiconductor material thin film layer of semiconductor gas sensor, uviol lamp, semiconductor gas sensor are fixed on and are provided with in the sensor housing of air hole; The power of described uviol lamp is 10 ~ 50mW.
Embodiment three,
A preparation method for thin film chip gas sensor, comprises the following steps:
The preparation of step one, substrate, employing glass sheet is the cleaning process of substrate, glass sheet: pure water rinsing after liquid detergent cleaning, the ultrasonic 10min of acetone, puts into after pure water rinsing and now join dense H
2sO
4+ H
2o
2(3:1, V/V) mixed liquid dipping 30min, after ultrapure water, the ultrasonic 10min of ultrapure water, high pure nitrogen dries up, 800 DEG C, baking oven baking 15min.First plate hearth electrode on the surface of this backing material, then plate thin layers of semiconductor material, described semiconductor material is Si, Ge, GaAs, ZnO, TiO
2, choose any one kind of them in GaN and SiC.Obtain semiconductor gas sensor; Step 2, on thin layers of semiconductor material, be coated with unordered type metal film system again, finally plate point electrode; Step 3, uviol lamp is set above the semiconductor material thin film layer of semiconductor gas sensor, uviol lamp, semiconductor gas sensor are fixed on and are provided with in the sensor housing of air hole; The power of described uviol lamp is 10 ~ 50mW.
Further, in the process preparing hearth electrode, the metal electrode of selection is used for forming Ohmic contact with semiconductor, and the metal material of this electrode is Ti or Al.
Further, the preparation method of described semiconductor material adopts any one in sol-gal process, hydrolysis methods, magnetron sputtering method, vacuum vapor deposition method, electron-beam vapor deposition method, self-assembly method and thing phase sedimentation.
In when the unordered type metal film system of preparation, object forms Schottky junction structure with semiconductor material; Described metal film is any one in Pt, Au, Pd, Cu, Cr, Ni.The object preparing point electrode forms good contact, and described point electrode material is Ag or Ti.
Claims (9)
1. a preparation method for thin film chip gas sensor, is characterized in that, comprises the following steps:
Step one, preparation one block of backing material, first plate hearth electrode on the surface of this backing material, then plating half
Conductor material thin layer, obtains semiconductor gas sensor;
Step 2, on thin layers of semiconductor material, be coated with unordered type metal film system again, finally plate point electrode;
Step 3, uviol lamp is set above the semiconductor material thin film layer of semiconductor gas sensor, uviol lamp, semiconductor gas sensor are fixed on and are provided with in the sensor housing of air hole.
2. the preparation method of a kind of thin film chip gas sensor as claimed in claim 1, is characterized in that, described substrate is optional the silicon chip of silicon dioxide oxide layer or glass sheet or sheet metal; When selecting substrate process, process substrate, disposal route is corrosion, ion implantation, original position etching and growth Seed Layer.
3. the preparation method of the thin film chip sensor as described in claim 1, is characterized in that, the method for described growth Seed Layer is magnetron sputtering or molecular beam epitaxy or electrochemical deposition.
4. the preparation method of the thin film chip sensor as described in claim 1, is characterized in that, the metal material of described hearth electrode is Ti or Al.
5. the preparation method of thin film chip sensor as claimed in claim 1, it is characterized in that, described semiconductor material is Si, Ge, GaAs, ZnO, TiO
2, choose any one kind of them in GaN and SiC.
6. the preparation method of the thin film chip sensor as described in claim 1, it is characterized in that, the preparation method of described semiconductor material adopts any one in sol-gal process, hydrolysis methods, magnetron sputtering method, vacuum vapor deposition method, electron-beam vapor deposition method, self-assembly method and thing phase sedimentation.
7. the preparation method of the thin film chip sensor as described in claim 1, is characterized in that, the material of described unordered type metal film system is any one in Pt, Au, Pd, Cu, Cr, Ni.
8. the preparation method of thin film chip sensor as claimed in claim 1, is characterized in that: the object preparing point electrode forms good contact, and described point electrode material is Ag or Ti.
9. the preparation method of thin film chip sensor as claimed in claim 1, is characterized in that: the power of described uviol lamp is 10 ~ 50mW.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108333220A (en) * | 2017-12-13 | 2018-07-27 | 湖北大学 | New Hydrogen air-sensitive sensing unit preparation method based on single molybdenum oxide nanobelt |
| WO2020172805A1 (en) * | 2019-02-27 | 2020-09-03 | Qi Diagnostics Limited | Sensing material for high sensitivity and selectivity |
| CN111624236A (en) * | 2020-01-14 | 2020-09-04 | 黄辉 | Semiconductor film gas sensor and preparation method thereof |
| CN114965651A (en) * | 2022-05-19 | 2022-08-30 | 湖北大学 | ZnO-based methane sensor and preparation method and application thereof |
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| WO2020172805A1 (en) * | 2019-02-27 | 2020-09-03 | Qi Diagnostics Limited | Sensing material for high sensitivity and selectivity |
| CN111624236A (en) * | 2020-01-14 | 2020-09-04 | 黄辉 | Semiconductor film gas sensor and preparation method thereof |
| CN111624236B (en) * | 2020-01-14 | 2023-12-26 | 黄辉 | Semiconductor film gas sensor and preparation method thereof |
| CN114965651A (en) * | 2022-05-19 | 2022-08-30 | 湖北大学 | ZnO-based methane sensor and preparation method and application thereof |
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Application publication date: 20150311 |