CN104407023B - Sensor element - Google Patents
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- CN104407023B CN104407023B CN201410644700.4A CN201410644700A CN104407023B CN 104407023 B CN104407023 B CN 104407023B CN 201410644700 A CN201410644700 A CN 201410644700A CN 104407023 B CN104407023 B CN 104407023B
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- gas
- sensor element
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- sensor
- electronic component
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Abstract
A disclosed sensor element comprises cover plates, an electrode substrate, interval reaction bands and semiconductor electronic components; the cover plates are arranged at the outer sides of the sensor element, the electrode substrate is arranged between the cover plates, and the spaces between the cover plates and the electrode substrates form interval reaction bands; and the semiconductor electronic components are fixedly disposed on the electrode substrate, are integrally disposed in the interval reaction bands, and exactly face to the gas input direction. The sensor element has the characteristics of high sensitivity, rapid response, good selectivity, simple structure, long service life and the like, can be designed aiming at any gases, and makes up the disadvantages that all performances of a conventional gas sensor cannot be completely considered.
Description
Technical field
The invention belongs to the technical field of sensor chip, in particular to a kind of sensor element.
Background technology
With the increasingly raising of automobile emission regulation, also more and more higher is required to exhaust gas measuring, for this car engine
Machine needs the shorter cold start-up time to meet requirement.Simultaneously consider energy saving needs, a kind of integrated level height, small volume,
The chip oxygen sensor that power consumption is little, toggle speed is fast becomes a kind of trend, to meet after engine electric spray system cold start-up
Rapidly enter the requirement of closed-loop control as far as possible, reduce the power consumption of lambda sensor simultaneously.
Existing sheet type sensor structure is mainly made up of 3 layers of oxidation zirconia substrate and some function thick-film layers at present, oxidation
Zirconia substrate mainly passes through curtain coating or the method shaping rolling film, and thick film functional layer is mainly obtained by screen printing technique.Oxygen
The measuring electrode of sensor and reference electrode are respectively formed on the surfaces externally and internally of substrate, by punch forming by the middle part of substrate
Wash one long and narrow openning open, to form reference air duct；And the platinum disposition of heating component wrapped up by ceramic insulating layer exists
On the inner surface of bottom substrate, also to make a call to two through holes by the heating element heater of inner surface with outer surface end in the end of substrate
Heating electrode slice couples together, and constitutes sensing element and the integrated chip oxygen sensor structure of heating element heater.
But this structural thickness is thick, volume is big, production process is complicated, and heating element heater is planted in sensor internal, stability with the form of wrapping up
Poor, and easy electric leakage.
Gas sensor is a kind of converter that certain gas volume fraction changes into corresponding electric signal, existing at present
Gas sensor species is various, different by gas sensitive used and its gas-sensitive property, can be divided into semiconductor-type, solid electrolyte
Formula, electric chemical formula, catalytic combustion type etc..
1st, semiconductor gas sensor
This sensor accounts for 60% in gas sensor.Resistance-type and non-resistor two can be divided into according to its mechanism
Kind.Resistance-type adopts the metal oxide materials such as sno2, zno to prepare, and has the forms such as porous sintered part, thick film, film.Mainly
Depending on detecting the resistance of gas sensor with the situation of change of gas content, mainly use metal oxide ceramic air-sensitive material
Material.Non-resistor semiconductor gas sensor is to be changed and work with gas content with voltage using the electric current of gas sensor.
2nd, solid-state electrolyte gas sensor
This sensor element conducts for ion pair solid electrolyte diaphragm.Its mechanism is using barrier film both sides two battery
Between potential difference be equal to concentration cell potential.Measure gas concentration by measuring electromotive force, as h2s can be measured
Yst-au-wo3, nh+4caco3 of measurement nh3 etc..
3rd, catalytic combustion type gas sensor
This gas sensor can be divided into directly contact combustion-type and two kinds of catalytic Contact combustion-type.Its operation principle is:
Gas sensitive in the energized state, imflammable gas oxidizing fire or oxidizing fire under catalyst action, the heat of generation makes
The heating wire of sensor heats up, so that its resistance value produces change, measures the concentration of gas by measuring resistance variations.This
Kind of sensor can only measure fuel gas, and other are insensitive to non-combustible.
Although existing gas sensor species is various at present, principle is different, each type of sensor is all only
Can be effective to specific gas, and the selectivity of sensor can not take into account with the scope of application, well, then may be used if selectively
The gaseous species detecting are few, if detectable gaseous species are many, then selectively not high.
A kind of thin film chip gas sensor is provided in number of patent application is for the patent application of 201410285080.x,
Including one piece of substrate, substrate has a hearth electrode, layer of semiconductor material thin-layer, semiconductor material are had on substrate and hearth electrode
There is one layer of unordered type metal membrane system on material thin layer, fastened point electrode in this unordered type metal film；Described hearth electrode and point electrode
Drawn and external impressed current meter by wire；By described structural arrangement in the blind boxes of a single radial cut.Also disclose a kind of thin
Membrane DNA chip gas sensor preparation method, is used for preparing the sensor chip, prepares one block of backing material, in this backing material
Surface plate hearth electrode first, then plate thin layers of semiconductor material, then be coated with unordered type metal membrane system, finally plate point electrode,
In the box of closing total being placed in a single radial cut；When being applied to detect gas, when gas passes through blind boxes,
In the presence of noble metal system is as catalyst, there is catalytic chemistry reaction, liberated heat excites the electronics in metal to cross gold
Belong to and the interface of semiconductor forms electric current；Using galvanometer sensed current signal, using size and the phase of sensed current signal
Detection to gas and its content is realized to change.The optional silicon chip having silica oxide layer of described substrate or sheet glass or
Sheet metal；When from substrate process, substrate is processed, processing method is corrosion, ion implanting, original position etch and grow
Seed Layer.The method of described growth Seed Layer is magnetron sputtering or molecular beam epitaxy or electrochemical deposition.The core film of this application
Piece gas sensor has that sensitivity is high, and response is fast, selectively good, and structure is simple, the features such as life-span length, and can be directed to any gas
Body is designed, and compensate for the shortcoming that traditional gas sensors can be taken into account.
Number of patent application be 201010147931.6 patent application in provide a kind of integrated chip type oxygen sensor and
Its preparation method, its preparation method comprises the following steps: the first step, by the same pvb of Zirconium oxide powder of 5% moles yttrium, pine
Oleyl alcohol and dibutyl phthalate (dbp) prepare pulping with the quality of 70～86:6～12:4～9:4～9 than mixing and ball milling
Body, then passes through double knife edges technology flow casting molding, makes zirconium oxide green tape, then become substrate by mould punching after natural drying
Base substrate, i.e. upper strata oxidation zirconia substrate；Then the electrode slurry containing 70%～90% platinum powder and electrocondution slurry are printed on upper strata
The surfaces externally and internally of oxidation zirconia substrate, forms measuring electrode and reference electrode；Inner surface electrode aoxidizes zirconia substrate end by upper strata
The electrode being stamped and formed out is connected through hole and is connected with the interior electrode connecting piece (19) of outer surface；Second step, by graphite powder, pvb, pine tar
Alcohol and softening agent mix fully with the mass ratio of 30～46:20～30:16～24:10～24, formation can screen printing sizing agent, and
This slurry is printed and covers on interior electrode surface；This reference air diffusion gap printing layer width will be between upper strata zirconium oxide
Between substrate and reference electrode width, thickness will reach 15 to 50 microns, will form elongate slot after sintering；3rd step, will
The same pvb of Zirconium oxide powder of 5% moles yttrium, terpinol and dibutyl phthalate (dbp) are with 70～86:6～12:4
The quality of～9:4～9 is prepared into slurry than mixing and ball milling, then passes through double knife edges technology flow casting molding, makes after natural drying
Zirconium oxide green tape, then substrate base substrate is become by mould punching, i.e. lower floor's oxidation zirconia substrate；More than 97% will be reached containing purity
Alumina powder slurry be printed on lower floor aoxidize zirconia substrate outer surface, prepare alumina ceramic insulating layer；Then will contain
The electrocondution slurry having platinum powder is printed on this alumina ceramic insulating layer, and one-step print forms platinum heating element heater and heating electrode
Piece；4th step, next, be layered in upper strata oxidation zirconia substrate and lower floor's zirconium oxide substrate with the adhesive containing zirconia powder
Together, it is heated to 40～60 degree to press closely simultaneously, then lifting in the slurry containing magnesium aluminate spinel is immersed at measuring electrode end,
Form the porous ceramics protective layer of parcel one；5th step, merges parcel all-in-one-piece green compact and burns in 1300～1500 degree of high temperature
1～3 hour of knot, prepares integrated chip type oxygen sensor.
Also there is following deficiency in prior art: Die strength does not reach required strength demand, chip electrode and measurement
Not, impact senses precision to sensitiveness between gas.
Content of the invention
The present invention is directed to the deficiencies in the prior art, provides a kind of intensity satisfaction requirement, chip electrode and measurement gas abundant
The respond well sensor chip of contact, sensing.
For realizing above-mentioned purpose, employ a kind of following scheme: sensor element, including cover plate, electrode base sheet,
Every reaction zone and semiconductor electronic component, wherein, described cover plate is arranged on the outside of sensor element, and described electrode base sheet sets
Put between cover plate, the space between described cover plate and electrode base sheet forms Gap response band, described semiconductor electronic unit
Part is fixed on electrode base sheet, and is integrally placed in Gap response band, and described semiconductor electronic component is just to gas input direction.
Further, described semiconductor electronic component contains gas sensitization layer, and described gas sensitization layer just inputs to gas
Direction.
Further, described gas sensitization layer is the sensitive membrane to nitrogen or oxygen sensitive.
Further, described semiconductor electronic component respectively has a layer insulating up and down.
Further, described gas sensitization layer is organic polymer or super molecular compound.
Beneficial effects of the present invention:
The structure being combined using cover plate and piezoelectric substrate, increased Die strength；And can carry out for specific gas
Specific gas are had accurately mensure effect by design, have sensitivity height, and response is fast, selectively good, and structure is simple, the life-span
Long the features such as.
Brief description
Fig. 1 is the structural representation of sensor of the invention element.
In figure, 1 is cover plate, and 2 is electrode base sheet, and 3 is semiconductor electronic component.
Specific embodiment
Purpose and technical scheme for making the embodiment of the present invention are clearer, and the technical scheme below in conjunction with embodiment is entered
Row clearly and completely describes.Obviously, described embodiment is a part of embodiment of the present invention, rather than whole enforcement
Example.Based on described embodiments of the invention, those of ordinary skill in the art are obtained on the premise of without creative work
The every other embodiment obtaining, broadly falls into the scope of protection of the invention.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, and all terms used herein (include technology art
Language and scientific terminology) there is general understanding identical meaning with the those of ordinary skill in art of the present invention.Also should
It is understood by, those terms defined in such as general dictionary should be understood that the meaning having with the context of prior art
The consistent meaning of justice, and unless defined as here, will not be explained with idealization or excessively formal implication.
Embodiment 1
A kind of sensor element, including cover plate, electrode base sheet 2, Gap response band and semiconductor electronic component 3, wherein,
Described cover plate 1 is arranged on the outside of sensor element, and described electrode base sheet 2 is arranged between cover plate 1, described cover plate 1
Space and electrode base sheet 2 between forms Gap response band, and described semiconductor electronic component 3 is fixed on electrode base sheet 2, and whole
Body is placed in Gap response band, and described semiconductor electronic component 3 is just to gas input direction.Described semiconductor electronic component 3 contains
There is gas sensitization layer, described gas sensitization layer is just to gas input direction.Gas sensitization layer is the sensitive membrane to oxygen sensitive.Institute
Stating gas sensitization layer is super molecular compound.
As preferred mode, described semiconductor electronic component 3 respectively have a layer insulating up and down.
Embodiment 2
A kind of sensor element, including cover plate, electrode base sheet 2, Gap response band and semiconductor electronic component 3, wherein,
Described cover plate 1 is arranged on the outside of sensor element, and described electrode base sheet 2 is arranged between cover plate 1, described cover plate 1
Space and electrode base sheet 2 between forms Gap response band, and described semiconductor electronic component 3 is fixed on electrode base sheet 2, and whole
Body is placed in Gap response band, and described semiconductor electronic component 3 is just to gas input direction.Described semiconductor electronic component 3 contains
There is gas sensitization layer, described gas sensitization layer is just to gas input direction.Gas sensitization layer is the sensitive membrane sensitive to nitrogen.Institute
Stating gas sensitization layer is organic polymer.
As preferred mode, described semiconductor electronic component 3 respectively have a layer insulating up and down.
These are only embodiments of the present invention, its description is more concrete and in detail, but can not therefore and be interpreted as right
The restriction of the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the present invention
On the premise of design, some deformation can also be made and improve, these belong to protection scope of the present invention.
Claims (4)
1. a kind of sensor element is it is characterised in that include cover plate, electrode base sheet, Gap response band and semiconductor electronic unit
Part, wherein, described cover plate is arranged on the outside of sensor element, and described electrode base sheet is arranged between cover plate, described covers
Space between cover plate and electrode base sheet forms Gap response band, and described semiconductor electronic component is fixed on electrode base sheet, and
It is integrally placed in Gap response band, described semiconductor electronic component is just to gas input direction；Described semiconductor electronic component contains
There is gas sensitization layer, described gas sensitization layer is just to gas input direction.
2. a kind of sensor element according to claim 1 is it is characterised in that described gas sensitization layer is to nitrogen or oxygen
The sensitive membrane of air-sensitive sense.
3. a kind of sensor element according to claim 1 it is characterised in that described semiconductor electronic component each up and down
There is a layer insulating.
4. a kind of sensor element according to claim 1 is it is characterised in that described gas sensitization layer is organic polymer
Or super molecular compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410644700.4A CN104407023B (en) | 2014-11-14 | 2014-11-14 | Sensor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410644700.4A CN104407023B (en) | 2014-11-14 | 2014-11-14 | Sensor element |
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| Publication Number | Publication Date |
|---|---|
| CN104407023A CN104407023A (en) | 2015-03-11 |
| CN104407023B true CN104407023B (en) | 2017-01-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410644700.4A Expired - Fee Related CN104407023B (en) | 2014-11-14 | 2014-11-14 | Sensor element |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995019563A1 (en) * | 1994-01-14 | 1995-07-20 | Neotronics Limited | Gas sensor |
| CN101006337A (en) * | 2004-06-22 | 2007-07-25 | 住友电气工业株式会社 | Sensor chip and production method therefor |
| CN101137900A (en) * | 2005-01-24 | 2008-03-05 | 住友电气工业株式会社 | Method of manufacturing sensor chip, and the sensor chip |
| CN101390228A (en) * | 2006-02-27 | 2009-03-18 | 京瓷株式会社 | Process for producing ceramic member, ceramic member, gas sensor element, fuel cell element, filter element, layer-built piezoelectric element, injector, and fuel injection system |
| CN101806768A (en) * | 2010-04-16 | 2010-08-18 | 常州联德电子有限公司 | Integrated chip type oxygen sensor and manufacturing method thereof |
-
2014
- 2014-11-14 CN CN201410644700.4A patent/CN104407023B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995019563A1 (en) * | 1994-01-14 | 1995-07-20 | Neotronics Limited | Gas sensor |
| CN101006337A (en) * | 2004-06-22 | 2007-07-25 | 住友电气工业株式会社 | Sensor chip and production method therefor |
| CN101137900A (en) * | 2005-01-24 | 2008-03-05 | 住友电气工业株式会社 | Method of manufacturing sensor chip, and the sensor chip |
| CN101390228A (en) * | 2006-02-27 | 2009-03-18 | 京瓷株式会社 | Process for producing ceramic member, ceramic member, gas sensor element, fuel cell element, filter element, layer-built piezoelectric element, injector, and fuel injection system |
| CN101806768A (en) * | 2010-04-16 | 2010-08-18 | 常州联德电子有限公司 | Integrated chip type oxygen sensor and manufacturing method thereof |
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| CN104407023A (en) | 2015-03-11 |
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Granted publication date: 20170125 Termination date: 20201114 |