CN104404316A - Aluminum-silicon composite material - Google Patents
Aluminum-silicon composite material Download PDFInfo
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- CN104404316A CN104404316A CN201410727264.7A CN201410727264A CN104404316A CN 104404316 A CN104404316 A CN 104404316A CN 201410727264 A CN201410727264 A CN 201410727264A CN 104404316 A CN104404316 A CN 104404316A
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Abstract
The invention discloses an aluminum-silicon composite material which has the remarkable advantages that the heat conduction coefficient is high, the density is small and the thermal expansion coefficient is matched with a chip, and can be widely applied to the field of high-end electronic element packaging shells. The aluminum-silicon composite material is prepared from the following components: 49.35% of silicon, 50.23% of aluminum, 0.307% of iron, 0.035% of nickel, 0.0347% of titanium, 0.0158% of pickaxe, 0.0135% of vanadium and the balance of impurities. The heat conduction coefficient of the aluminum-silicon composite material is greater than or equal to 120W/m.K, the thermal expansion coefficient of the aluminum-silicon composite material is (11.0-13.5)*10<-6>, the density of the aluminum-silicon composite material is 2.5+/-0.1g/cm<3>, and the tensile strength of the aluminum-silicon composite material is greater than or equal to 102MPa.
Description
Technical field
The present invention relates to electronic devices and components package casing Application Areas, particularly relate in microwave components, T/R assembly contour end member device package surgery.
Technical field
The present invention relates to electronic devices and components package casing Application Areas, particularly relate in microwave components, T/R assembly contour end member device package surgery.
Background technology
Traditional electronic devices and components package casing prepares adopted material the metals such as cold-rolled steel, oxygen free copper and aluminium alloy.These conventional encapsulant are because of the feature of its material itself, and Application Areas limits all to some extent.Such as, cold-rolled steel because of its thermal conductivity less than normal, do not reach chip height heat radiation requirement, thus can only be applied to the not too high occasion of cooling requirements; Oxygen free copper heat conduction is good, but because of its density large, the coefficient of expansion is large, can not large-scale application in aerospacecraft and the occasion more responsive to weight; Although aluminium alloy density is little, because its coefficient of expansion is too large, can not effectively mate with chip, thus the direct encapsulation of high-end chip can not be used for, could need realize welding with the coupling of chip by transition material or structure, thus add weight and the cost of device, meanwhile, reduce the reliability of its overall device.
Background technology
Traditional electronic devices and components package casing prepares adopted material the metals such as cold-rolled steel, oxygen free copper and aluminium alloy.These conventional encapsulant are because of the feature of its material itself, and Application Areas limits all to some extent.Such as, cold-rolled steel because of its thermal conductivity less than normal, do not reach chip height heat radiation requirement, thus can only be applied to the not too high occasion of cooling requirements; Oxygen free copper heat conduction is good, but because of its density large, the coefficient of expansion is large, can not large-scale application in aerospacecraft and the occasion more responsive to weight; Although aluminium alloy density is little, because its coefficient of expansion is too large, can not effectively mate with chip, thus the direct encapsulation of high-end chip can not be used for, could need realize welding with the coupling of chip by transition material or structure, thus add weight and the cost of device, meanwhile, reduce the reliability of its overall device.
Summary of the invention
For simultaneous adaptation electronic devices and components package casing prepares the high heat conductance of material, the requirement of the over-all properties such as low-expansion coefficient and little density to it, the invention provides a kind of Al-Si composites, can meet the material properties requirements such as high heat conductance, low-expansion coefficient and little density, its concrete right requires as follows simultaneously:
1, this Al-Si composites component content is: silicon 49.35%, aluminium 50.23%, iron 0.307%, nickel 0.035%, titanium 0.0347%, pick 0.0158%, vanadium 0.0135%, and all the other are impurity.
2, according to claim 1, this Al-Si composites physicals is: thermal conductivity is>=120W/mK, and thermal expansivity is (11.0 ~ 13.5) * 10
-6, density is 2.5 ± 0.1g/cm
3, tensile strength>=102MPa.
3, according to claim 1,2, this Al-Si composites is mainly used in electronic devices and components package casing preparation field.
Compared with conventional package heavy metal material, this Al-Si composites has that density is little, thermal expansivity is low and the remarkable advantage such as high heat conduction, namely the coupling welding requirements of chip can be satisfied with, the requirement of high-power chip heat radiation can be met again, simultaneously, density is far smaller than conventional steel matrix, Copper substrate material, can be widely used in aerospace and the field to weight sensitive, in the electronic devices and components package casing field of especially high-end, high reliability request.
With conventional aluminum alloy phase ratio, this Al-Si composites density and thermal conductivity similar, but its have aluminium alloy incomparable remarkable advantage, that is exactly that the coefficient of expansion is little, be only aluminium alloy about 1/2 (the conventional aluminum alloys coefficient of expansion is about 23*10
-6).Therefore, this Al-Si composites can replace aluminium alloy, is widely used in chip coupling welding field, and without the need to increasing transition material or structure, greatly reduces cost and device weight, improve the reliability of overall device simultaneously.
Summary of the invention
For simultaneous adaptation electronic devices and components package casing prepares the high heat conductance of material, the requirement of the over-all properties such as low-expansion coefficient and little density to it, the invention provides a kind of Al-Si composites, can meet the material properties requirements such as high heat conductance, low-expansion coefficient and little density, its concrete right requires as follows simultaneously:
1, this Al-Si composites component content is: silicon 49.35%, aluminium 50.23%, iron 0.307%, nickel 0.035%, titanium 0.0347%, pick 0.0158%, vanadium 0.0135%, and all the other are impurity.
2, according to claim 1, this Al-Si composites physicals is: thermal conductivity is>=120W/mK, and thermal expansivity is (11.0 ~ 13.5) * 10
-6, density is 2.5 ± 0.1g/cm
3, tensile strength>=102MPa.
3, according to claim 1,2, this Al-Si composites is mainly used in electronic devices and components package casing preparation field.
Compared with conventional package heavy metal material, this Al-Si composites has that density is little, thermal expansivity is low and the remarkable advantage such as high heat conduction, namely the coupling welding requirements of chip can be satisfied with, the requirement of high-power chip heat radiation can be met again, simultaneously, density is far smaller than conventional steel matrix, Copper substrate material, can be widely used in aerospace and the field to weight sensitive, in the electronic devices and components package casing field of especially high-end, high reliability request.
With conventional aluminum alloy phase ratio, this Al-Si composites density and thermal conductivity similar, but its have aluminium alloy incomparable remarkable advantage, that is exactly that the coefficient of expansion is little, be only aluminium alloy about 1/2 (the conventional aluminum alloys coefficient of expansion is about 23*10
-6).Therefore, this Al-Si composites can replace aluminium alloy, is widely used in chip coupling welding field, and without the need to increasing transition material or structure, greatly reduces cost and device weight, improve the reliability of overall device simultaneously.
Embodiment
This Al-Si composites component content is: silicon 49.35%, aluminium 50.23%, iron 0.307%, nickel 0.035%, titanium 0.0347%, pick 0.0158%, vanadium 0.0135%, and all the other are impurity.Its physical function parameter is: thermal conductivity is>=120W/mK, and thermal expansivity is (11.0 ~ 13.5) * 10
-6, density is 2.5 ± 0.1g/cm
3, tensile strength>=102MPa.Specifically as shown in table 1.
A kind of Al-Si composites
Embodiment
This Al-Si composites component content is: silicon 49.35%, aluminium 50.23%, iron 0.307%, nickel 0.035%, titanium 0.0347%, pick 0.0158%, vanadium 0.0135%, and all the other are impurity.Its physical function parameter is: thermal conductivity is>=120W/mK, and thermal expansivity is (11.0 ~ 13.5) * 10
-6, density is 2.5 ± 0.1g/cm
3, tensile strength>=102MPa.Specifically as shown in table 1.
Claims (3)
1. this Al-Si composites component content is: silicon 49.35%, aluminium 50.23%, iron 0.307%, nickel 0.035%, titanium 0.0347%, pick 0.0158%, vanadium 0.0135%, and all the other are impurity.
2. according to claim 1, this Al-Si composites physical function parameter is: thermal conductivity is >=120W/mK, and thermal expansivity is (11.0 ~ 13.5) * 10-6, and density is 2.5 ± 0.1g/cm3, tensile strength >=102MPa.
3., according to claim 1,2, this Al-Si composites is mainly used in electronic devices and components package casing preparation field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410727264.7A CN104404316B (en) | 2014-12-04 | 2014-12-04 | Aluminum-silicon composite material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410727264.7A CN104404316B (en) | 2014-12-04 | 2014-12-04 | Aluminum-silicon composite material |
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| CN104404316A true CN104404316A (en) | 2015-03-11 |
| CN104404316B CN104404316B (en) | 2017-01-25 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862015A (en) * | 2015-12-18 | 2016-08-17 | 中国电子科技集团公司第四十研究所 | Treatment method of aluminum silicon material for double-directional electrical bridge |
| CN110512120A (en) * | 2018-05-21 | 2019-11-29 | 通用汽车环球科技运作有限责任公司 | The method for manufacturing crystalline state ferro-aluminum silicon alloy |
| CN112714575A (en) * | 2020-12-29 | 2021-04-27 | 中国电子科技集团公司第四十三研究所 | Aluminum-silicon composite packaging cover plate and manufacturing method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0570878A (en) * | 1991-09-12 | 1993-03-23 | Mitsubishi Materials Corp | Al-si alloy for pressure casting excellent in strength at high temperature |
| JP2002192301A (en) * | 2000-12-26 | 2002-07-10 | Sumitomo Special Metals Co Ltd | Method for producing aluminum-silicon alloy |
| JP2009188366A (en) * | 2008-02-05 | 2009-08-20 | Akane:Kk | Integral semiconductor heat dissipating substrate and its manufacturing method |
| CN102534321A (en) * | 2012-03-06 | 2012-07-04 | 上海驰韵新材料科技有限公司 | Process for preparing Si-Al alloy electronic packaging material by spray deposition |
| CN103540810A (en) * | 2013-10-17 | 2014-01-29 | 常熟市良益金属材料有限公司 | Aluminum-silicon alloy |
-
2014
- 2014-12-04 CN CN201410727264.7A patent/CN104404316B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0570878A (en) * | 1991-09-12 | 1993-03-23 | Mitsubishi Materials Corp | Al-si alloy for pressure casting excellent in strength at high temperature |
| JP2002192301A (en) * | 2000-12-26 | 2002-07-10 | Sumitomo Special Metals Co Ltd | Method for producing aluminum-silicon alloy |
| JP2009188366A (en) * | 2008-02-05 | 2009-08-20 | Akane:Kk | Integral semiconductor heat dissipating substrate and its manufacturing method |
| CN102534321A (en) * | 2012-03-06 | 2012-07-04 | 上海驰韵新材料科技有限公司 | Process for preparing Si-Al alloy electronic packaging material by spray deposition |
| CN103540810A (en) * | 2013-10-17 | 2014-01-29 | 常熟市良益金属材料有限公司 | Aluminum-silicon alloy |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862015A (en) * | 2015-12-18 | 2016-08-17 | 中国电子科技集团公司第四十研究所 | Treatment method of aluminum silicon material for double-directional electrical bridge |
| CN110512120A (en) * | 2018-05-21 | 2019-11-29 | 通用汽车环球科技运作有限责任公司 | The method for manufacturing crystalline state ferro-aluminum silicon alloy |
| CN110512120B (en) * | 2018-05-21 | 2022-02-22 | 通用汽车环球科技运作有限责任公司 | Method for manufacturing crystalline aluminum-iron-silicon alloy |
| CN112714575A (en) * | 2020-12-29 | 2021-04-27 | 中国电子科技集团公司第四十三研究所 | Aluminum-silicon composite packaging cover plate and manufacturing method thereof |
| CN112714575B (en) * | 2020-12-29 | 2022-11-22 | 中国电子科技集团公司第四十三研究所 | Aluminum-silicon composite packaging cover plate and manufacturing method thereof |
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| CN104404316B (en) | 2017-01-25 |
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