CN104388901A - Cobalt-antimonide-base thermoelectric film and preparation method thereof - Google Patents

Cobalt-antimonide-base thermoelectric film and preparation method thereof Download PDF

Info

Publication number
CN104388901A
CN104388901A CN201410626851.7A CN201410626851A CN104388901A CN 104388901 A CN104388901 A CN 104388901A CN 201410626851 A CN201410626851 A CN 201410626851A CN 104388901 A CN104388901 A CN 104388901A
Authority
CN
China
Prior art keywords
preparation
cobalt
thermal electric
doping
antimony cobalt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410626851.7A
Other languages
Chinese (zh)
Other versions
CN104388901B (en
Inventor
范平
郑壮豪
梁广兴
张银
范卫芳
罗景庭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen University
Original Assignee
Shenzhen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen University filed Critical Shenzhen University
Priority to CN201410626851.7A priority Critical patent/CN104388901B/en
Publication of CN104388901A publication Critical patent/CN104388901A/en
Application granted granted Critical
Publication of CN104388901B publication Critical patent/CN104388901B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention discloses a cobalt-antimonide-base thermoelectric film and a preparation method thereof. The preparation method comprises the following steps: by using a cobalt antimonide target as a sputtering target, and separately making a material to be doped into a doping target; fixing the sputtering target and doping target to a rotating target rack of a multi-station sputtering system for later sputtering; and plating a cobalt antimonide film on an insulating substrate by sputtering deposition while sputtering the doping material on the antimonide cobalt film by many times to obtain a laminated-structure film, and finally, carrying out in-situ heat treatment to obtain the cobalt-antimonide-base thermoelectric film. The method has high controllability, and is beneficial to generation of the film structure; the film has favorable adhesiveness and repetitiveness, can satisfy the demands for large-scale production, and can accurately control the sputtering power, time and other parameters as well as the doping amount of the doping material; and by adopting the lamination mode, multiple elements can be simultaneously doped conveniently, and the complex techniques for preparing the multi-doping-element target are reduced.

Description

A kind of antimony cobalt-based thermal electric film and preparation method thereof
Technical field
The present invention relates to thermoelectricity field of functional materials, particularly relate to and a kind ofly realize high performance antimony cobalt-based thermal electric film of independent element doping or multi-element doping and preparation method thereof.
Background technology
Thermoelectric material is a kind of environmental type functional materials that can realize heat energy and electric energy and directly mutually change, with the thermoelectric device that thermoelectric material makes, size is little, quality is light, without any mechanical rotation part, work noiseless, long service life, nothing liquid state or gaseous medium, there is not the problem of contaminate environment, thermoelectric generator, TEC and sensor field can be widely used in.Therefore high performance thermoelectric material is prepared, finally realize solar energy optical-thermal and the industrial exhaust heat waste-heat power generation of environment-friendly type, and what replace high pollution is that the compressor cooling of working medium realizes free of contamination semiconductor thermoelectric refrigeration technology with freonll-11, not only meet the requirement of environmental protection and low-carbon economy, there is important scientific meaning and application prospect widely simultaneously.
Current, due to the restriction by pyroelectric material performance, the application of thermo-electric device is also far from reaching the stage utilizing waste heat waste-heat power generation and replace mechanical refrigerator, this has become the bottleneck of thermo-electric device large-scale application, and therefore high performance thermoelectric material is one of hot subject of current international material research field.
The performance of thermoelectric material characterizes primarily of dimensionless figure factor Z T value, ZT=T σ S 2/ κ, wherein T is absolute temperature; σ is the specific conductivity of material; S is Seebeck coefficient; κ is thermal conductivity.Wherein σ S in ZT value 2sometimes power factor (PF=σ S is defined as separately again 2).
Antimony cobalt (CoSb 3) thermoelectric material be a kind of there is application prospect be applied to one of thermoelectric material of middle warm area, the optimization of its thermoelectricity capability is the advanced subject of current international thermoelectric material science with improving.Recent study finds, thermoelectric film is conducive to the pyroelecthc properties improving thermoelectric material, major cause is: one, by the reduction of dimension, form Interfacial scattering effect thus the thermal conductivity of reduction material, increase the thermoelectric figure of merit of material, the power factor that quantum confinement effect improves material can also be produced when film thickness is in nanometer scale; Two, filming can improve the ability of its response speed, energy density and small-sized static localization.In addition, the thermoelectric material of filming, in transformation efficiency and in cost, has very large advantage.Therefore for CoSb 3the research of base thermal electric film has great importance.
At present for CoSb 3the preparation research of thermal electric film only has a small amount of report, and effect is also not satisfactory, and mainly simple technology of preparing can not prepare many doping, high performance CoSb at present 3base thermoelectric film material, although complicated technique can prepare the higher CoSb of the figure of merit 3base thermal electric film, but the demand that its preparation cost is high, complex process all cannot meet its industrialization.And for CoSb 3base thermal electric film, it wants to use under middle high temperature environment for a long time, and the physical property such as high high-temp stability, oxidation-adsorption of film is most important for film.In addition, CoSb 3need the doping of associated materials, the raising that thermoelectricity capability is larger can be realized.Doping way the most frequently used is at present first by the material of required doping and CoSb 3be mixed with into same target, then be coated with into film, this mode cost is high, and operation is loaded down with trivial details, and the time is long, and target does not conform to the chemical composition of film simultaneously, poor controllability.Therefore how CoSb is simplified 3the synthesis and preparation process of base thermal electric film, realizes CoSb 3the optimum doping of base thermal electric film, obtains the CoSb of Stability Analysis of Structures, superior performance 3the gordian technique of base thermal electric film is current research emphasis.
As can be seen here, prior art has yet to be improved and developed.
Summary of the invention
In view of above-mentioned the deficiencies in the prior art, the object of the present invention is to provide a kind of antimony cobalt-based thermal electric film and preparation method thereof, be intended to solve that existing antimony cobalt-based thermal electric film preparation method technique is loaded down with trivial details, efficiency is low, the problem of poor controllability.
Technical scheme of the present invention is as follows:
A preparation method for antimony cobalt-based thermal electric film, wherein, comprises step:
Using antimony cobalt target as sputtering target material, and doping target made separately by the material that need adulterate;
Sputtering target material and doping target are fixed on turning of multi-work-station sputtering system to be sputtered on target holder;
Adopt sputter deposition to be coated with antimony cobalt thin film layer on an insulating substrate, simultaneously in sputter procedure, the material of doping is splashed to antimony cobalt thin film layer several times thus prepares the film with rhythmo structure;
Antimony cobalt-based thermal electric film is obtained finally by situ heat treatment.
The preparation method of described antimony cobalt-based thermal electric film, wherein,
Sputter procedure is carried out under inert gas atmosphere condition, prepares described antimony cobalt-based thermal electric film by high-temp in-situ thermal treatment.
The preparation method of described antimony cobalt-based thermal electric film, wherein, is splashed to antimony cobalt thin film layer several times by the material of doping.
The preparation method of described antimony cobalt-based thermal electric film, wherein, after sputtering completes, closes sputtering source and intake valve, pressure in vacuum tank is evacuated to below 0.1MPa, then passes into rare gas element in a vacuum chamber, increase the antimony cobalt thin film layer temperature be coated with simultaneously.
The preparation method of described antimony cobalt-based thermal electric film, wherein, described rare gas element is nitrogen or argon gas.
The preparation method of described antimony cobalt-based thermal electric film, wherein, the material of described doping comprises one or more of simple substance and compound.
The preparation method of described antimony cobalt-based thermal electric film, wherein, described simple substance is one or more of In, Ti, Se, Mo, Zn, Bi, Cu and Yb etc.
The preparation method of described antimony cobalt-based thermal electric film, wherein, described compound is ZnO, AZO, Bi 2te 3deng one or more.
A kind of antimony cobalt-based thermal electric film, wherein, adopts preparation method as above to make.
Beneficial effect: the present invention prepares antimony cobalt-based thermal electric film by adopting sputter-deposition technology, controllability is strong, be conducive to the generation of membrane structure, film has good tack and repeatability, can meet scale operation needs, and can control the doping of the parameter such as sputtering power, time and dopant material accurately, adopt the mode of many laminations, be convenient to multiple element adulterate simultaneously, decrease the loaded down with trivial details technique of preparation many doped elements target, simplify preparation technology.
Accompanying drawing explanation
Fig. 1 is antimony cobalt-based thermal electric film preparation flow figure in the embodiment of the present invention 1.
Fig. 2 is antimony cobalt-based thermal electric film preparation flow figure in the embodiment of the present invention 2.
Fig. 3 is antimony cobalt-based thermal electric film preparation flow figure in the embodiment of the present invention 3.
Fig. 4 is antimony cobalt-based thermal electric film preparation flow figure in the embodiment of the present invention 4.
Fig. 5 is antimony cobalt-based thermal electric film preparation flow figure in the embodiment of the present invention 5.
Fig. 6 is antimony cobalt-based thermal electric film preparation flow figure in the embodiment of the present invention 6.
Fig. 7 is antimony cobalt-based thermal electric film preparation flow figure in the embodiment of the present invention 7.
Fig. 8 a to Fig. 8 c is antimony cobalt-based thermal electric film gamma spectrometry result of the present invention.
Fig. 9 provides by the embodiment of the present invention 1 the thermoelectricity capability measuring result comparison diagram of antimony cobalt-based thermal electric film with the thermal electric film that do not adulterate.
Embodiment
The invention provides a kind of antimony cobalt-based thermal electric film and preparation method thereof, for making object of the present invention, technical scheme and effect clearly, clearly, the present invention is described in more detail below.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The preparation method of a kind of antimony cobalt-based thermal electric film provided by the present invention, it comprises step:
Using antimony cobalt target as sputtering target material, and doping target made separately by the material that need adulterate;
Sputtering target material and doping target are fixed on turning of multi-work-station sputtering system to be sputtered on target holder;
Adopt sputter deposition to be coated with antimony cobalt thin film layer on an insulating substrate, simultaneously in sputter procedure, the material of doping is splashed to antimony cobalt thin film layer several times thus prepares the film with rhythmo structure;
Antimony cobalt-based thermal electric film is obtained finally by situ heat treatment.
The present invention adopts sputter deposition in the process preparing antimony cobalt-based thermal electric film, and by multistep cosputtering legal system for lamination alloy firm, the mode of this lamination is convenient to multiple element and is adulterated simultaneously, and simplify technique, improve efficiency, manufacturing cost is lower.And the doping of the parameter such as sputtering power, time and dopant material can be controlled accurately, material doped homogeneity can also be ensured.The method controllability is strong, and be beneficial to the generation of membrane structure, the film of generation has good tack and repeatability, can meet large-scale need of production.
Specifically, described sputter procedure is carried out under inert gas atmosphere condition, prepares described antimony cobalt-based thermal electric film by high-temp in-situ thermal treatment.
Specifically the material of doping can be splashed to antimony cobalt thin film layer several times.When being namely coated with antimony cobalt thin film layer on an insulating substrate, when first antimony cobalt being sputtered onto different time, open the sputtering source of dopant material, start to carry out cosputtering together with antimony cobalt, prepared many laminations antimony cobalt-based thermal electric film with periodic structure by this multistep processes.
Such as, when antimony cobalt is sputtered onto 1/4,1/2,3/4 of required total sputtering time, opens the sputtering source of the material (representing with A) of required doping, start to carry out cosputtering together with antimony cobalt, the time of each cosputtering is 1/3 of required doping time, and namely the time of each cosputtering is identical." CoSb can be had like this by above-mentioned three-step approach 3+ CoSb 3/ A+CoSb 3" many laminations antimony cobalt-based alloy thin film of periodic structure.
In addition, after sputtering completes, close sputtering source and intake valve, pressure in vacuum tank is evacuated to below 0.1MPa, pass into rare gas element in a vacuum chamber again, increase the antimony cobalt thin film layer temperature be coated with simultaneously, by situ heat treatment with obtained final antimony cobalt-based thermal electric film.
By method of the present invention, the antimony cobalt-based thermal electric film of different doping content, different doping type can be prepared.Further, its controllability is strong, and repeatability is high, and preparation process is simple, can realize independent element doping or multi-element doping.
Described rare gas element in the present invention is nitrogen or argon gas.
The material wherein adulterated comprises simple substance and/or compound.For simple substance, it can be one or more in In, Ti, Se, Mo, Zn, Bi, Cu and Yb etc.For compound, it can be ZnOAZO and Bi 2te 3deng one or more.
Based on aforesaid method, the present invention also provides a kind of antimony cobalt-based thermal electric film, and it adopts preparation method as above to make.This antimony cobalt-based thermal electric film can actually on thin-film power generating device use.
Embodiment
Adopt In as dopant material (A), first, by CoSb 3with to be sputtered on two station target framves that In target is separately fixed at sputtering instrument (multi-work-station sputtering system); Using polyimide (PI) as substrate (insulating substrate), substrate is placed in a reservoir, adopt acetone, alcohol and deionized water to carry out ultrasonic cleaning successively; Sputtering system base vacuum is evacuated to 6.0 × 10 -4pa, passing into flow is 40 sccmAr gas (high-purity), and operating pressure controls 3.0 × 10 -1pa; Adopt ion source energy to bombard substrate surface lower than the ionic fluid of 1KeV, the impurity molecule being adsorbed on substrate surface is removed further;
As Fig. 1 shows, in the 1st embodiment, first adopt sputtering method in substrate, be coated with CoSb 3thermal electric film, total sputtering time is 60 min, works as CoSb 3when being sputtered onto 15 min, open In sputtering source, allow In(doped element) and CoSb 3sputter, the cosputtering time is 30 s simultaneously; After completing, close In sputtering source, continue sputtering CoSb 3; Work as CoSb 3when being sputtered onto 30 min, continue and In cosputtering 30 s; Work as CoSb 3when being sputtered onto 45 min, continue and In cosputtering 30 s; Last CoSb 3continue to be sputtered onto 60 min.After having sputtered, after plated film terminates, close sputtering source and intake valve, pressure in vacuum tank is evacuated to below 0.1Pa, then passes into Ar gas in a vacuum chamber, pressure in vacuum tank is higher than 100 Pa, increase the temperature to 350 DEG C at the thin film layer place be coated with, synthesis obtains CoSb simultaneously 3base thermal electric film.
Fig. 2 is CoSb of the present invention 3the preparation flow figure of base thermal electric film preparation method the 2nd embodiment, is not divided into three steps as different from Example 1, can be divided into N walk (i.e. N number of cycle) carry out cosputtering doping, N be more than or equal to 1 integer.
Fig. 3 is CoSb of the present invention 3the preparation flow figure of base thermal electric film preparation method the 3rd embodiment, as different from Example 1, can carry out two and above cosputtering doping, by doped element A and dopant material B together with CoSb 3carry out cosputtering.
Fig. 4 is CoSb of the present invention 3the preparation flow figure of base thermal electric film preparation method the 4th embodiment, is not divided into three steps as different from Example 3, can be divided into N walk carry out cosputtering doping, N be more than or equal to 1 integer.
Fig. 5 is CoSb of the present invention 3the preparation flow figure of base thermal electric film preparation method the 5th embodiment, as different from Example 3, when carrying out multi-element doping, doped element does not carry out cosputtering simultaneously, but respectively with CoSb 3carry out cosputtering, i.e. A and CoSb 3doping, B and CoSb 3doping.
Fig. 6 is CoSb of the present invention 3the preparation flow figure of base thermal electric film preparation method the 6th embodiment, is not divided into three steps as different from Example 5, can be divided into N walk carry out cosputtering doping, N be more than or equal to 1 integer.
Fig. 7 is CoSb of the present invention 3the preparation flow figure of base thermal electric film preparation method the 7th embodiment, the element of cosputtering doping each time as different from Example 1 can be identical A or B, also can be different A or B.
Fig. 8 a to Fig. 8 c is CoSb 3in base thermal electric film, different element is at the distribution plan on surface, and as can be seen from the figure various element is at CoSb 3distribution is all very even, and the present invention can coat the CoSb of Uniform Doped as can be seen here 3base thermal electric film.
Fig. 9 is the CoSb that the embodiment of the present invention one provides 3the thermoelectricity capability measuring result (In doping is not adulterated with In) of base thermal electric film, can be learnt by figure: the film performance after doping is more excellent.
In sum, the present invention prepares antimony cobalt-based thermal electric film by adopting sputter-deposition technology, controllability is strong, and be conducive to the generation of membrane structure, film has good tack and repeatability, scale operation needs can be met, and the doping of the parameter such as sputtering power, time and dopant material can be controlled accurately, adopt the mode of many laminations, be convenient to multiple element and adulterate simultaneously, decrease the loaded down with trivial details technique of preparation many doped elements target, simplify preparation technology.
Should be understood that, application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can be improved according to the above description or convert, and all these improve and convert the protection domain that all should belong to claims of the present invention.

Claims (9)

1. a preparation method for antimony cobalt-based thermal electric film, is characterized in that, comprises step:
Using antimony cobalt target as sputtering target material, and doping target made separately by the material that need adulterate;
Sputtering target material and doping target are fixed on turning of multi-work-station sputtering system to be sputtered on target holder;
Adopt sputter deposition to be coated with antimony cobalt thin film layer on an insulating substrate, simultaneously in sputter procedure, the material of doping is splashed to antimony cobalt thin film layer several times thus prepares the film with rhythmo structure;
Situ heat treatment is finally adopted to obtain antimony cobalt-based thermal electric film.
2. the preparation method of antimony cobalt-based thermal electric film according to claim 1, it is characterized in that, sputter procedure is carried out under inert gas atmosphere condition, prepares described antimony cobalt-based thermal electric film by high-temp in-situ thermal treatment.
3. the preparation method of antimony cobalt-based thermal electric film according to claim 1, is characterized in that, the material of doping is splashed to several times antimony cobalt thin film layer.
4. the preparation method of antimony cobalt-based thermal electric film according to claim 1, is characterized in that, after sputtering completes, close sputtering source and intake valve, pressure in vacuum tank is evacuated to below 0.1MPa, then passes into rare gas element in a vacuum chamber, increase the antimony cobalt thin film layer temperature be coated with simultaneously.
5. the preparation method of antimony cobalt-based thermal electric film according to claim 1, is characterized in that, described rare gas element is nitrogen or argon gas.
6. the preparation method of antimony cobalt-based thermal electric film according to claim 1, is characterized in that, the material of described doping comprises one or more of simple substance and compound.
7. the preparation method of antimony cobalt-based thermal electric film according to claim 6, is characterized in that, described simple substance is one or more in In, Ti, Se, Mo, Zn, Bi, Cu and Yb.
8. the preparation method of antimony cobalt-based thermal electric film according to claim 6, is characterized in that, described compound is ZnO, AZO and Bi 2te 3in one or more.
9. an antimony cobalt-based thermal electric film, is characterized in that, adopt as arbitrary in claim 1 to 8 as described in preparation method make.
CN201410626851.7A 2014-11-10 2014-11-10 Cobalt-antimonide-base thermoelectric film and preparation method thereof Active CN104388901B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410626851.7A CN104388901B (en) 2014-11-10 2014-11-10 Cobalt-antimonide-base thermoelectric film and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410626851.7A CN104388901B (en) 2014-11-10 2014-11-10 Cobalt-antimonide-base thermoelectric film and preparation method thereof

Publications (2)

Publication Number Publication Date
CN104388901A true CN104388901A (en) 2015-03-04
CN104388901B CN104388901B (en) 2017-05-10

Family

ID=52606856

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410626851.7A Active CN104388901B (en) 2014-11-10 2014-11-10 Cobalt-antimonide-base thermoelectric film and preparation method thereof

Country Status (1)

Country Link
CN (1) CN104388901B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107299326A (en) * 2017-08-16 2017-10-27 信利光电股份有限公司 A kind of vacuum coating doping target and preparation method thereof and vacuum coating method
CN107385403A (en) * 2017-08-01 2017-11-24 深圳大学 A kind of ZnSb bases thermal electric film and preparation method thereof
CN107460443A (en) * 2017-08-01 2017-12-12 深圳大学 A kind of Ti adulterates CoSb3Thermal electric film and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101114692A (en) * 2007-08-10 2008-01-30 中国科学院上海硅酸盐研究所 Method for manufacturing cobalt stibium antimonide based thermoelectric device
CN101969095A (en) * 2010-08-26 2011-02-09 中山大学 Quasi one-dimensional nano structural thermoelectric material, device and preparation method thereof
CN102482766A (en) * 2009-06-30 2012-05-30 欧-弗莱克斯科技有限公司 Method for producing thermoelectric layers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101114692A (en) * 2007-08-10 2008-01-30 中国科学院上海硅酸盐研究所 Method for manufacturing cobalt stibium antimonide based thermoelectric device
CN102482766A (en) * 2009-06-30 2012-05-30 欧-弗莱克斯科技有限公司 Method for producing thermoelectric layers
CN101969095A (en) * 2010-08-26 2011-02-09 中山大学 Quasi one-dimensional nano structural thermoelectric material, device and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YIN ZHANG等: "The influence of annealing condition on the properties of the Co-Sb thermoelectric thin films prepared by ion beam sputtering", 《PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107385403A (en) * 2017-08-01 2017-11-24 深圳大学 A kind of ZnSb bases thermal electric film and preparation method thereof
CN107460443A (en) * 2017-08-01 2017-12-12 深圳大学 A kind of Ti adulterates CoSb3Thermal electric film and preparation method thereof
CN107299326A (en) * 2017-08-16 2017-10-27 信利光电股份有限公司 A kind of vacuum coating doping target and preparation method thereof and vacuum coating method

Also Published As

Publication number Publication date
CN104388901B (en) 2017-05-10

Similar Documents

Publication Publication Date Title
CN103060750B (en) Method for preparing bismuth, antimony and telluride base thermoelectric film
CN103325935B (en) A kind of flexible thin film thermobattery and preparation method thereof
US8501524B2 (en) Method of manufacturing thin-film light-absorbing layer, and method of manufacturing thin-film solar cell using the same
US20130075247A1 (en) Method and system for forming chalcogenide semiconductor materials using sputtering and evaporation functions
CN101339906A (en) Preparation process of novel environmental semi-conductor photoelectronic material beta-FeSi2 film
CN103165748A (en) Method of preparing copper-zinc tin-sulphur solar cell absorbed layer thin film
CN104388901A (en) Cobalt-antimonide-base thermoelectric film and preparation method thereof
CN106399937A (en) Method for preparing preferred-orientation bismuth telluride thermoelectric thin film
CN106129241B (en) The method that solid reaction process prepares stacking faults chalcogenide thermoelectric material
CN103572243B (en) A kind of zinc antimonide base thermal electric film and preparation method thereof
CN103555986A (en) Method for preparing (Bi0.8Sb0.2)2Te3 nano thermoelectric material
CN105220119A (en) A kind of Ag doped with Mg 2si base thermal electric film and preparation method thereof
CN102751387B (en) Preparation method of Cu (In, ga) Se2thin film for absorption layer of thin film solar cell
Liu et al. The thermoelectric properties of zinc antimonide thin films fabricated through single element composite target
CN106893977B (en) A kind of ZnSb base film of high efficiency thermoelectric transfer characteristic and preparation method thereof
CN105514275A (en) Methylamine lead iodine based solar cell preparation method based on NiO hole transmission layer
CN104846335A (en) n-shaped cuprous oxide film and preparation method thereof
CN105200382B (en) A kind of Ge adulterates Mg2Si base thermal electric films and preparation method thereof
CN105220118B (en) A kind of Al doping Mg2Si base thermal electric films and preparation method thereof
CN105762210B (en) A kind of preparation method of CIGS thin-film for solar battery obsorbing layer
CN101967624A (en) Preparation method of Cu2ZnSnS4 photovoltaic film
CN112376028A (en) Sn doped Ge2Sb2Te5Thermoelectric film and method for manufacturing the same
Lee et al. Earth abundant materials for high efficiency heterojunction thin film solar cells
CN100552067C (en) A kind of method that improves the Ag-Pb-Sb-Te pyroelectric material performance
CN107978671A (en) A kind of N-type Bi2Te3Compound CH3NH3I thermal electric films and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant