CN104384721A - Chamfer processing method of PDC (Polycrystalline Diamond Compact) - Google Patents
Chamfer processing method of PDC (Polycrystalline Diamond Compact) Download PDFInfo
- Publication number
- CN104384721A CN104384721A CN201410563429.1A CN201410563429A CN104384721A CN 104384721 A CN104384721 A CN 104384721A CN 201410563429 A CN201410563429 A CN 201410563429A CN 104384721 A CN104384721 A CN 104384721A
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- China
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- laser
- pdc
- processing method
- chamfer processing
- pdc sheet
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention provides a chamfer processing method of a PDC (Polycrystalline Diamond Compact). A laser probe of a laser is kept still, the laser directionally emits pulses, a workbench moves towards the direction of the laser probe, a clamp of the workbench is used for clamping the PDC to rotate relative to the laser probe, and a PDC superhard layer of the PDC corresponds to the laser probe in position, wherein the frequency of the pulses directionally emitted by the laser is 20-200kHz; the single pulse energy emitted by the laser is 20-200 mu J; the movement speed of the workbench is 1-10mm/s; the rotating speed of the PDC is 5-1000rpm. According to the chamfer processing method, a laser processing technology is used for replacing a traditional milling mode, so that the chamfer processing efficiency is greatly improved, the parameters of the laser processing technology are defined, and the surface quality of chamfers is remarkably improved.
Description
Technical field
The present invention relates to superhard material manufacture field, be specifically related to a kind of chamfer processing method of PDC sheet.
Background technology
Composite polycrystal-diamond (Polycrystalline Diamond Compact, PDC) be a kind of new function material adopting diadust and cemented carbide substrate to sinter under high pressure high temperature condition, it had both had adamantine high rigidity, high-wearing feature and thermal conductivity, having again intensity and the toughness of carbide alloy, is the ideal material manufacturing cutting tool, drilling bit and other wear resistant tools.But the chamfering of the diamond superabrasive layer for PDC sheet, generally adopts grinding method to carry out processing and very easily cause small mechanical damage at present, have impact on the surface quality of fillet surface to a certain extent, and working (machining) efficiency also urgently improves further.
Summary of the invention
In view of this, the invention provides a kind of chamfer processing method of PDC sheet, be intended to by the chamfer machining of laser processing technology realization to PDC sheet.
The technical solution used in the present invention is specially: a kind of chamfer processing method of PDC sheet, the laser probe of laser instrument keeps motionless, described laser instrument orientation sends pulse, workbench moves to described laser probe direction, the jig clamping PDC sheet of workbench rotates relative to described laser probe, and the PDC superabrasive layer of described PDC sheet is corresponding with the position of described laser probe; Wherein: the frequency that described laser instrument orientation sends pulse is 20-200kHz; The single pulse energy that described laser instrument sends is 20-200 μ J; The translational speed of described workbench is 1-10mm/s, and the rotary speed of described PDC sheet is 5-1000rpm.
In the chamfer processing method of above-mentioned PDC sheet, the frequency that described laser instrument orientation sends pulse is 80-130kHz, the single pulse energy that described laser instrument sends is 200 μ J, and the translational speed of described workbench is 5-8mm/s, and the rotary speed of described PDC is 100-1000rpm.
In the chamfer processing method of above-mentioned PDC sheet, described laser instrument is nanosecond laser.
In the chamfer processing method of above-mentioned PDC sheet, described nanosecond laser is green glow nanosecond laser.
In the chamfer processing method of above-mentioned PDC sheet, described nanosecond laser adopts gas cooling jet.
In the chamfer processing method of above-mentioned PDC sheet, the scan rate of vibrating mirror of described nanosecond laser is 100-1000mm/s.
In the chamfer processing method of above-mentioned PDC sheet, the power of described nanosecond laser is 10-50W, and the pulsewidth of described nanosecond laser is 1-10ns.
In the chamfer processing method of above-mentioned PDC sheet, the power of described nanosecond laser is 15-25W, and the pulsewidth of described nanosecond laser is 2-5ns.
The beneficial effect that the present invention produces is:
Traditional grinding method is processed, and the human cost of consumption is at least twice of laser processing provided by the invention, but production efficiency is not as good as the half of described laser processing; The present invention is by selecting the parameter of laser processing technology, significantly improve the chamfer machining efficiency of PDC sheet, the PCD superabrasive layer that can realize any thickness PDC sheet chamfer machining and need not more exchange device at any angle, and adopt nanosecond laser there is no mechanical damage, and the thermal burn of fillet surface obviously reduces, improve the surface quality of machined surface.
Accompanying drawing explanation
When considered in conjunction with the accompanying drawings, more completely the present invention can be understood better.Accompanying drawing described herein is used to provide a further understanding of the present invention, and embodiment and explanation thereof, for explaining the present invention, do not form inappropriate limitation of the present invention.
Fig. 1 is the structural representation of PDC sheet.
In figure: 1, alloy substrate 2, PDC superabrasive layer 3, chamfering position.
Detailed description of the invention
Below in conjunction with drawings and Examples, technical scheme of the present invention is described in further detail.
PDC sheet as shown in Figure 1, comprise alloy substrate 1 and the PDC superabrasive layer 2 (diamond layer) of sintering, be processed with chamfering in the outer end of PDC superabrasive layer 2, different from traditional grinding, the present invention adopts laser processing technology to realize the processing of chamfering.
The basic step of laser processing technology is that the laser probe of laser instrument keeps motionless, laser instrument orientation sends high frequency (20-200kHz, be preferably 80-130kHz) high-energy (20-200 μ J, be preferably 200 μ J) pulse, first the direction of workbench phase laser probe has been moved location (translational speed has been 1-10mm/s, be preferably 5-8mm/s), then the jig of workbench holds the PDC sheet of chamfering to be processed, its relative laser is popped one's head in, and (rotating speed is 5-1000rpm to High Rotation Speed, be preferably 100-1000rpm, this rotating speed is according to pulse frequency, the parameters such as the cylindrical of PDC sheet and chamfer angle calculate.) rotate, PDC superabrasive layer 2 is corresponding with the position of laser probe.
Preferred as one, the green glow nanosecond laser in nanosecond laser selected by laser instrument, and laser instrument adopts nanosecond laser to adopt high-speed gas cooling jet, and other parameters of laser instrument comprise:
Scan rate of vibrating mirror is 100-1000mm/s;
Power is 10-50W (being preferably 15-25W);
Pulsewidth is 1-10ns (being preferably 2-5ns).
By adopting above-mentioned parameter to limit two laser instruments selected, chamfer machining at any angle can be realized in PDC sheet 0-90 °, and the thermal burn of fillet surface is significantly reduced.
As mentioned above, embodiments of the invention are explained, obviously, as long as do not depart from fact inventive point of the present invention and effect, will be readily apparent to persons skilled in the art distortion, is also all included within protection scope of the present invention.
Claims (8)
1. the chamfer processing method of a PDC sheet, it is characterized in that, the laser probe of laser instrument keeps motionless, described laser instrument orientation sends pulse, workbench moves to described laser probe direction, the jig clamping PDC sheet of workbench rotates relative to described laser probe, and the PDC superabrasive layer of described PDC sheet is corresponding with the position of described laser probe; Wherein:
The frequency that described laser instrument orientation sends pulse is 20-200kHz;
The single pulse energy that described laser instrument sends is 20-200 μ J;
The translational speed of described workbench is 1-10mm/s;
The rotary speed of described PDC sheet is 5-1000rpm.
2. the chamfer processing method of PDC sheet according to claim 1, it is characterized in that, the frequency that described laser instrument orientation sends pulse is 80-130kHz, the single pulse energy that described laser instrument sends is 200 μ J, the translational speed of described workbench is 5-8mm/s, and the rotary speed of described PDC sheet is 100-1000rpm.
3. the chamfer processing method of PDC sheet according to claim 1, is characterized in that, described laser instrument is nanosecond laser.
4. the chamfer processing method of PDC sheet according to claim 3, is characterized in that, described nanosecond laser is green glow nanosecond laser.
5. the chamfer processing method of PDC sheet according to claim 4, is characterized in that, described nanosecond laser adopts gas cooling jet.
6. the chamfer processing method of PDC sheet according to claim 3, is characterized in that, the scan rate of vibrating mirror of described nanosecond laser is 100-1000mm/s.
7. the chamfer processing method of PDC sheet according to claim 3, is characterized in that, the power of described nanosecond laser is 10-50W, and the pulsewidth of described nanosecond laser is 1-10ns.
8. the chamfer processing method of PDC sheet according to claim 3, is characterized in that, the power of described nanosecond laser is 15-25W, and the pulsewidth of described nanosecond laser is 2-5ns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410563429.1A CN104384721A (en) | 2014-10-21 | 2014-10-21 | Chamfer processing method of PDC (Polycrystalline Diamond Compact) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410563429.1A CN104384721A (en) | 2014-10-21 | 2014-10-21 | Chamfer processing method of PDC (Polycrystalline Diamond Compact) |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104384721A true CN104384721A (en) | 2015-03-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410563429.1A Pending CN104384721A (en) | 2014-10-21 | 2014-10-21 | Chamfer processing method of PDC (Polycrystalline Diamond Compact) |
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| CN (1) | CN104384721A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113070564A (en) * | 2021-04-19 | 2021-07-06 | 河南景链新材料有限公司 | Method for rapidly processing polycrystalline diamond compact by using laser |
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| WO2005027728A2 (en) * | 2003-09-17 | 2005-03-31 | Becton, Dickinson And Company | Method for creating trenches in silicon wafers using a router |
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| CN101476445A (en) * | 2008-12-24 | 2009-07-08 | 陈继锋 | CVD diamond layer overlapped diamond composite sheet for drilling and its production method |
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| CN201483159U (en) * | 2009-08-14 | 2010-05-26 | 河南晶锐超硬材料有限公司 | Clamp used in laser cutting |
| CN102294507A (en) * | 2010-06-28 | 2011-12-28 | 三菱综合材料株式会社 | End mill and manufacturing method of same |
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| CN103921356A (en) * | 2014-04-18 | 2014-07-16 | 河南理工大学 | Method for conducting precise machining on end face of hard and brittle material |
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2014
- 2014-10-21 CN CN201410563429.1A patent/CN104384721A/en active Pending
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| WO2005027728A2 (en) * | 2003-09-17 | 2005-03-31 | Becton, Dickinson And Company | Method for creating trenches in silicon wafers using a router |
| WO2005027728A3 (en) * | 2003-09-17 | 2009-04-09 | Becton Dickinson Co | Method for creating trenches in silicon wafers using a router |
| US20090114628A1 (en) * | 2007-11-05 | 2009-05-07 | Digiovanni Anthony A | Methods and apparatuses for forming cutting elements having a chamfered edge for earth-boring tools |
| CN101335423A (en) * | 2008-07-24 | 2008-12-31 | 张家港市明锐激光机械有限公司 | Laser for laser cutting machine |
| CN101476445A (en) * | 2008-12-24 | 2009-07-08 | 陈继锋 | CVD diamond layer overlapped diamond composite sheet for drilling and its production method |
| CN201483159U (en) * | 2009-08-14 | 2010-05-26 | 河南晶锐超硬材料有限公司 | Clamp used in laser cutting |
| CN101658979A (en) * | 2009-10-09 | 2010-03-03 | 廊坊昊博金刚石有限公司 | Laser double-faced synchronous machining system and machining method thereof |
| CN102294507A (en) * | 2010-06-28 | 2011-12-28 | 三菱综合材料株式会社 | End mill and manufacturing method of same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113070564A (en) * | 2021-04-19 | 2021-07-06 | 河南景链新材料有限公司 | Method for rapidly processing polycrystalline diamond compact by using laser |
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