CN104377127B - The adjusting method of electric capacity - Google Patents
The adjusting method of electric capacity Download PDFInfo
- Publication number
- CN104377127B CN104377127B CN201410508364.0A CN201410508364A CN104377127B CN 104377127 B CN104377127 B CN 104377127B CN 201410508364 A CN201410508364 A CN 201410508364A CN 104377127 B CN104377127 B CN 104377127B
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- Prior art keywords
- end architecture
- capacitance
- electric capacity
- adjusting method
- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
Abstract
Present invention is disclosed a kind of adjusting method of electric capacity.Including providing front-end architecture, the front-end architecture is handled by electron irradiation；The capacitance of the front-end architecture is detected, filters out the front-end architecture that capacitance is less than desired value；The front-end architecture filtered out is heat-treated.The present invention enables to capacitance control in required scope, and fluctuation is smaller, improves the uniformity of electric capacity by heat treatment.In addition, the method cost of the present invention is cheap, significant effect.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of adjusting method of electric capacity.
Background technology
With the fast development of semiconductor technology, the size of device is less and less, and this is allowed in metal-oxide-semiconductor, raceway groove
(channel) length shortens.In this metal-oxide-semiconductor, with being continuously increased for source-drain voltage, the depletion layer in drain region can be made always
Source region is expanded to, it is zero to make channel length, that is, produces the break-through (punch through) between drain-source.
Meanwhile because the extensive use of high-frequency element, Vehicles Collected from Market is growing day by day to low capacitor element demand.In order to reach
Such purpose, many process meanses are introduced in semiconductor manufacturing to reduce electric capacity.
In the case where not changing device architecture, that is, keep the length of raceway groove constant, avoid that break-through occurs between source/drain region
Effect, while and can enough reaches the purpose for reducing electric capacity, takes multiple means in the industry.Wherein, it is exactly one using electron irradiation
The effective method of kind.It is stable but because electronics speed energy is very big, fluctuation is larger, and electric capacity can be reduced to below control line sometimes
Property and uniformity are poor, so as to cause yield loss.
Therefore, it is necessary to improve to prior art, to reduce or avoid the occurrence of the problem of electric capacity is too low
The content of the invention
It is an object of the present invention to provide a kind of adjusting method of electric capacity, improves electric capacity stability and one in the prior art
The problem of cause property is poor.
In order to solve the above technical problems, the present invention provides a kind of adjusting method of electric capacity, including：
Front-end architecture is provided, the front-end architecture is handled by electron irradiation；
The capacitance of the front-end architecture is detected, filters out the front-end architecture that capacitance is less than desired value；
The front-end architecture filtered out is heat-treated.
Optionally, it is described to be heat-treated to be 280 DEG C~320 DEG C in temperature range for the adjusting method of described electric capacity
Atmosphere in, continuous heating 60~70 minutes.
Optionally, for the adjusting method of described electric capacity, the heat treatment is carried out using furnace process.
Optionally, for the adjusting method of described electric capacity, the heat treatment is carried out using baking oven baking.
Optionally, for the adjusting method of described electric capacity, in addition to：The electric capacity of the front-end architecture of detection after heat treatment
Value, if the capacitance for detecting the front-end architecture is less than desired value, continues to be heat-treated the front-end architecture, and again
Detect the capacitance of the front-end architecture.
Optionally, for the adjusting method of described electric capacity, if detecting the capacitance and desired value phase of the front-end architecture
Difference is less than setting value, then continues to be heat-treated the front-end architecture under the same conditions.
Optionally, for the adjusting method of described electric capacity, if detecting the capacitance and desired value phase of the front-end architecture
Difference is more than or equal to setting value, then the temperature for continuing to be heat-treated the front-end architecture is higher than the temperature of the heat treatment carried out before
Degree.
Optionally, for the adjusting method of described electric capacity, according to the specification of setting, if in the heat treatment of stipulated number
Afterwards, the capacitance of the front-end architecture is still unqualified, judges the front-end architecture failure.
Compared with prior art, in the adjusting method of electric capacity provided by the invention, there is provided front-end architecture, the front-end architecture
Handled by electron irradiation；The front-end architecture that capacitance is less than desired value is filtered out, then the front-end architecture filtered out is carried out
It is heat-treated at least once.Compared with prior art, the present invention enables to capacitance control in required scope by heat treatment
It is interior, and fluctuation is smaller, improves the uniformity of electric capacity.In addition, the method cost of the present invention is cheap, significant effect.
Brief description of the drawings
Fig. 1 is the flow chart of the adjusting method of electric capacity in the embodiment of the present invention.
Embodiment
The adjusting method of the electric capacity of the present invention is described in more detail below in conjunction with schematic diagram, which show this
The preferred embodiment of invention, it should be appreciated that those skilled in the art can change invention described herein, and still realize this
The advantageous effects of invention.Therefore, description below is appreciated that for the widely known of those skilled in the art, and is not made
For limitation of the present invention.
For clarity, whole features of practical embodiments are not described.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to a large amount of implementation details are made to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended
Time, but it is only to those skilled in the art routine work.
More specifically description is of the invention by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
The core concept of the present invention is, for the front-end architecture after electron irradiation is handled, to pass through heat treatment so that electricity
Hold in the scope required for being maintained at.So as to reach the effect for causing electric capacity to ensure stability and uniformity with relatively low cost.
The preferred embodiment of the adjusting method of the electric capacity is exemplified below, should be bright with clear explanation present disclosure
Really, present disclosure is not restricted to following examples, and other pass through the routine techniques of those of ordinary skill in the art
The improvement of means is also within the thought range of the present invention.
Based on above-mentioned thought, the preferred embodiment of the adjusting method of electric capacity is provided below, refer to the present invention shown in Fig. 1
The flow chart of the adjusting method of electric capacity in embodiment, the adjusting method of the electric capacity of the present embodiment include：
Step S101：Front-end architecture is provided, the front-end architecture is handled by electron irradiation.The front-end architecture includes lining
Bottom, such as silicon substrate, silicon-on-insulator substrate etc., buried regions is could be formed with the substrate, and formed on substrate must
Want device layer.Electron irradiation processing is carried out to the front-end architecture, the process can use conventional means of the prior art, this
Invention is not repeated this.
Then, step S102 is carried out：The capacitance of the front-end architecture is detected, filters out capacitance less than before desired value
End structure.Generally, by that by electron irradiation, capacitance can be caused to decline, if although this decline be preferably, electric capacity
Value declines excessive, more than minimum standard (desired value), also results in that device is unqualified, therefore, it is necessary to carry out the detection of capacitance,
Filter out capacitance is too low.
Then, step S103 is carried out：The front-end architecture filtered out is heat-treated.Preferably, it is described heat treatment be
Temperature range is continuous heating 60~70 minutes in 280 DEG C~320 DEG C of atmosphere.The heat treatment can use boiler tube work
Skill carries out the heat treatment or carries out the heat treatment using baking oven baking.
In the capacitance for after Overheating Treatment, detecting front-end architecture after heat treatment.Generally, through Overheating Treatment
Enable to capacitance to have certain rise, and keep preferable stability.But also occur after being once heat-treated
Although there is rise, but still it is less than the situation of desired value.In this case, continue to carry out heat to the front-end architecture
Processing.Preferably, optimize the condition of heat treatment according to the gap between capacitance and desired value.For example, before if detection is described
The capacitance of end structure differs with desired value is less than setting value, then continues to carry out heat to the front-end architecture under the same conditions
Processing.If detecting the capacitance of the front-end architecture and desired value being differed by more than equal to setting value, continue to tie the front end
The temperature that structure is heat-treated is higher than the temperature of the heat treatment carried out before.After heat treatment again, institute is detected again
State the capacitance of front-end architecture.
Preferably, this process being heat-treated again circulation may be prescribed as 1 to 2 times, if by this heat several times
After processing, capacitance has met required standard, then it is qualified to be considered as.If the capacitance that front-end architecture also be present is less than desired value,
Then it can determine that as failure.The setting of this cycle-index is after being considered based on each side such as product needs and production time
Determine, therefore, according to different needs, and every time heat treatment after capacitance situation of change, can also carry out more times
Several heat treatment.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (6)
1. a kind of adjusting method of electric capacity, including：
Front-end architecture is provided, the front-end architecture is handled by electron irradiation；
The capacitance of the front-end architecture is detected, filters out the front-end architecture that capacitance is less than desired value；
The front-end architecture filtered out is heat-treated；
The capacitance of the front-end architecture of detection after heat treatment, if the capacitance for detecting the front-end architecture is less than desired value,
Continue to be heat-treated the front-end architecture, and detect the capacitance of the front-end architecture again, according to the specification of setting, if
After the heat treatment of stipulated number, the capacitance of the front-end architecture is still unqualified, judges the front-end architecture failure.
2. the adjusting method of electric capacity as claimed in claim 1, it is characterised in that described to be heat-treated to be 280 in temperature range
DEG C~320 DEG C of atmosphere in, continuous heating 60~70 minutes.
3. the adjusting method of electric capacity as claimed in claim 2, it is characterised in that the heat treatment is carried out using furnace process.
4. the adjusting method of electric capacity as claimed in claim 2, it is characterised in that the heat treatment is carried out using baking oven baking.
5. the adjusting method of electric capacity as claimed in claim 1, it is characterised in that if detect the capacitance of the front-end architecture with
Desired value difference is less than setting value, then continues to be heat-treated the front-end architecture under the same conditions.
6. the adjusting method of electric capacity as claimed in claim 1, it is characterised in that if detect the capacitance of the front-end architecture with
Desired value differs by more than the temperature for equal to setting value, then continuing to be heat-treated the front-end architecture and is higher than the heat carried out before
The temperature of processing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410508364.0A CN104377127B (en) | 2014-09-28 | 2014-09-28 | The adjusting method of electric capacity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410508364.0A CN104377127B (en) | 2014-09-28 | 2014-09-28 | The adjusting method of electric capacity |
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| CN104377127A CN104377127A (en) | 2015-02-25 |
| CN104377127B true CN104377127B (en) | 2018-03-06 |
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| CN201410508364.0A Active CN104377127B (en) | 2014-09-28 | 2014-09-28 | The adjusting method of electric capacity |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102254828A (en) * | 2011-07-18 | 2011-11-23 | 无锡新洁能功率半导体有限公司 | Method for making semiconductor device with super junction structure and rapid reverse recovery characteristic |
| CN102723363A (en) * | 2011-03-29 | 2012-10-10 | 比亚迪股份有限公司 | VDMOS device and manufacturing method thereof |
| US8445377B2 (en) * | 2007-01-24 | 2013-05-21 | International Business Machines Corporation | Mechanically robust metal/low-k interconnects |
-
2014
- 2014-09-28 CN CN201410508364.0A patent/CN104377127B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8445377B2 (en) * | 2007-01-24 | 2013-05-21 | International Business Machines Corporation | Mechanically robust metal/low-k interconnects |
| CN102723363A (en) * | 2011-03-29 | 2012-10-10 | 比亚迪股份有限公司 | VDMOS device and manufacturing method thereof |
| CN102254828A (en) * | 2011-07-18 | 2011-11-23 | 无锡新洁能功率半导体有限公司 | Method for making semiconductor device with super junction structure and rapid reverse recovery characteristic |
Non-Patent Citations (1)
| Title |
|---|
| 电子辐照对硅双极晶体管交流参数的影响;翟冬青等;《半导体学报》;19921130;第13卷(第11期);第709-713页 * |
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| CN104377127A (en) | 2015-02-25 |
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Address after: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee after: SHANGHAI ADVANCED SEMICONDUCTO Address before: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee before: ADVANCED SEMICONDUCTOR MANUFACTURING Co.,Ltd. |
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Effective date of registration: 20210422 Address after: 200120 No.600 Yunshui Road, Pudong New Area, Shanghai Patentee after: Shanghai Jita Semiconductor Co.,Ltd. Address before: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee before: SHANGHAI ADVANCED SEMICONDUCTO |
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