CN104347737B - Without main grid, high efficiency back contact solar cell module, assembly and preparation technology - Google Patents
Without main grid, high efficiency back contact solar cell module, assembly and preparation technology Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to area of solar cell, particularly to without main grid, high efficiency solar cell module, assembly and production technology thereof.This solar module includes cell piece and electric connection layer, the shady face of described cell piece has the P electrode being connected with p-type doped layer and the N electrode being connected with n-type doping layer, it is characterized in that: described electric connection layer includes finger electrode more than two, the described finger electrode of each group becomes interdigitated alternately arranged, described finger electrode electrically connects with P electrode or N electrode, and the described one-tenth interdigited electrode of arranged adjacent electrically connects with different shaped doped layer electrode.It provides the benefit that: efficiency is high, resistance to hidden splits, and eliminates the shading loss of front gate line electrode, thus improves battery efficiency；The sheet of battery can be realized, thus reduce cost；Practicality is higher, and the back contacts solar battery module of the present invention is generally applicable to the various structures such as MWT, EWT and IBC.
Description
Technical field
The present invention relates to area of solar cell, particularly to without main grid, high efficiency back contact solar cell
Module, assembly and preparation technology thereof.
Background technology
The energy is the material base of mankind's activity, along with development and the progress of human society, to the energy
Demand grows with each passing day.Traditional fossil energy belongs to non-renewable energy resources and has been difficult to continue to meet social development
Demand, therefore world community is in recent years to new forms of energy and the research of renewable origin with utilize burning the hotest.Its
Middle solar energy generation technology has and sunlight is converted into electric power, uses simple and environmentally-friendly pollution-free, energy
The advantages such as source utilization rate is high are particularly subject to universal attention.Solar electrical energy generation is to use large-area P-N junction two
Pole pipe produces photo-generated carrier generating in the case of sunlit.
In prior art, occupy an leading position and the crystal-silicon solar cell of large-scale commercial, its launch site and
Launch site electrode is respectively positioned on battery front side (phototropic face), i.e. main grid, auxiliary grid line and is respectively positioned on battery front side.Due to
Solar energy level silicon material electronics diffusion length is shorter, and launch site is positioned at battery front side and is conducive to improving carrier
Collection efficiency.But owing to the grid line of battery front side blocks part sunlight (about 8%), so that solar-electricity
The effective area of shining light in pond reduces and have lost one part of current therefrom.Additionally when cell piece is connected, need
The back side of another block battery is received from the face bonding of one piece of battery, if using thicker plating with tin-coated copper strip
Stannum copper strips can be overly hard and cause the fragmentation of cell piece, if but can hide again with the widest tin-coated copper strip due to it
Cover too much light.Therefore, which kind of tin plating welding is used all can to produce the energy damage that series resistance is brought
Consumption and optical loss, be unfavorable for the sheet of cell piece simultaneously.In order to solve above-mentioned technical problem, this area
Front electrode is transferred to cell backside by technical staff, develops back contact solar cell, the back contacts sun
Battery refers to that the launch site electrode of battery and base electrode are respectively positioned on a kind of solar cell of cell backside.The back of the body connects
Electric shock pond has many good qualities: 1. efficiency is high, loses owing to completely eliminating the shading of front gate line electrode, from
And improve battery efficiency.2. can realize the sheet of battery, the metal connector device being used in series is all at electricity
, there is not the connection from front to the back side and can use thinner silicon chip, thus reduce cost in the back side, pond.③
More attractive, the front color even of battery, meet the esthetic requirement of consumer.
Back contacts solar cell includes the various structures such as MWT, EWT and IBC.Back contacts solar cell is big
That scale commercial metaplasia is produced it is crucial that be how efficiently being connected by back contacts solar cell of low cost
And it is fabricated to solar components.The common preparation method of MWT assembly is to use composite conducting backboard, is leading
Applying conducting resinl on electricity backboard, position punching corresponding on top of the encapsulation material makes conducting resinl run through encapsulating material,
Back contacts solar cell is accurately placed and makes conductiving point in conductive backings with back contacts too on encapsulating material
Electrode on positive electricity pond is contacted by conducting resinl, then lays upper strata EVA and glass on cell piece, then will
The module upset that whole stacking is good enters laminating machine and is laminated.There is following defect in this technique: 1, institute
The composite conducting backboard used is composite conducting metal forming in backboard, usually Copper Foil, and needs Copper Foil
Carry out laser ablation or chemical etching.Owing to laser ablation is the most operable for simple graph, for complexity figure
Case then etching speed is slow, and production efficiency is low, and it is previously prepared complex-shaped and resistance to that chemical etching then exists needs
Mask, environmental pollution and the corrosive liquid of the corrosion etching problem to polymer base material.Manufacture in this way
Conductivity type backplane manufacturing process is complicated, and cost is high.2, need the encapsulating material of layer after solar cell piece is entered
Row punching is to make conducting resinl run through encapsulating material, owing to encapsulating material is typically viscoelastic body, carry out accurately
Punching difficulty is very big.3, need accurate spot gluing equipment by conductive glue in the relevant position of backboard, right
The MWT this back contacts less battery of point can also operate, quantity little to back contacts point areas such as IBC
Big back contact battery uses spot gluing equipment cannot realize at all.
P-N junction is positioned over cell backside by IBC technology, and front decreases again electronics receipts without any blocking simultaneously
The distance of collection, therefore can increase substantially cell piece efficiency.IBC battery uses shallow diffusion, gently mixes in front
Miscellaneous and SiO2The technology such as passivation layer reduces recombination losses, at cell backside, diffusion region is limited in less region,
These diffusion regions become lattice arrangement at cell backside, the contact of diffusion region metal be limited in the least scope in
It it is now large number of fine contact point.IBC battery decreases the area in the re-diffusion district of cell backside, mixes
The saturated dark current in miscellaneous region can significantly reduce, and open-circuit voltage and conversion efficiency are improved.Pass through simultaneously
Large number of little contact point collected current makes electric current shorten in the transmission range of back surface, and group is greatly lowered
The series resistance of part.
IBC back contact battery enjoys industry to close owing to having the unapproachable high efficiency of conventional solaode
Note, has become as the study hotspot of a new generation's solar battery technology.But IBC solar-electricity in prior art
Module P-N junction position, pond is adjacent relatively near and all at the cell piece back side, it is difficult to connect IBC battery module
And it is prepared as assembly.For solving the problems referred to above, prior art also occurs in that multiple to IBC back contact solar
The improvement of battery, Sunpower company once invented adjacent P or N emitter stage thin by silver slurry silk screen printing
The connected electric current the most at last of grid line is guided to battery edge, re-uses even at the solder joint that the printing of cell piece edge is bigger
Tape splicing carries out welding series connection, and after screen printing technique is invented, field of solar energy uses this technology shape always
Become the confluxing of electric current, such as the patent 201310260260.8,201310606634.7 of up-to-date application,
201410038687.8,201410115631.8, do not make any improvement.
But, use thin grid line to carry out electric current collection, 5 cun of cell pieces still can use, but in existing skill
Series resistance will be run on the silicon chip of generally popular in art 6 cun or bigger rise and degradation under fill factor, curve factor
Problem, causes manufactured component power seriously to reduce.IBC battery in the prior art can also be in phase
The silver slurry grid line that between adjacent P or N emitter stage, silk screen printing is relatively wide reduces series resistance, but due to
The increase of silver amount can bring steeply rising of cost, and the widest grid line also can produce the insulation effect between P-N
Fruit is deteriorated, easily the problem of electric leakage.
Patent US20110041908A1 disclose a kind of back side have elongated interdigital emitter region and
The back contact solar battery of base region and production method thereof, have Semiconductor substrate, Semiconductor substrate
Backside surface be provided with elongated base region and elongated emitter region, base region is base semiconductor class
Type, emitter region is provided with the emitter semiconductor type contrary with described base semiconductor type；Elongated
Emitter region is provided with the elongated emitter electrode for making electrical contact with emitter region, and elongated base region is provided with use
Elongated base electrode in electrical contact base region；The most elongated emitter region has than elongated emitter stage electricity
Minimum structure width, and the most elongated base region to have the structure less than described elongated base electrode wide
Degree.However it is necessary that arranging substantial amounts of electric-conductor carrys out effective collected current, therefore causes manufacturing cost to increase,
Processing step is complicated.
Patent EP2709162A1 discloses a kind of solaode, applies to back contact solar cell, public
Open and be separated from each other and alternately arranged electrode contact unit, connected electrode contact list by longitudinal connector
Unit, forms " work " shape electrode structure；But this kind of structure has carried out twice connection on cell piece, for the first time
That cell piece is connected with electrode contact unit, then also need to by connector connect electrode contact unit, two
Secondary connection brings technologic complexity, and causes too much electrode contact point, is likely to result in " disconnection "
Or " mistake is even ", is unfavorable for the overall performance of back contact solar cell.
Patent WO2011143341A2 discloses a kind of back contact solar cell, including substrate, Duo Gexiang
Adjacent P doped layer and N doped layer are positioned at substrate back, P doped layer and N doped layer and metal contact layer layer
Folded, and it is provided with passivation layer between P doped layer and N doped layer and metal contact layer, on described passivation layer
Having substantial amounts of nanometer connecting hole, described nanometer connecting hole connects P doped layer and contacts with metal with N doped layer
Layer；But this invention utilizes nano-pore to connect metal contact layer can make resistance increase, moreover manufacturing process is complicated,
Manufacture equipment there is higher requirement.This invention can not be integrated into one multi-disc solaode and electric connection layer
Individual module, and after cell piece is integrated into solar module, it is not only convenient for being assembled into assembly, Er Qiebian
Connection in series-parallel between adjusting module, thus be conducive to adjusting the connection in series-parallel side of cell piece in solar module
Formula, reduces the connection resistance of assembly.
As can be seen here, a kind of simple in construction, assembled battery sheet convenience, low cost, low series resistance, resistance to hidden
Split, high efficiency, high stability, easy technology produce back contact solar cell assembly and preparation technology
It is to need badly at present to solve the technical problem that.
Summary of the invention
Present invention aims to the deficiencies in the prior art, it is provided that a kind of simple in construction, assembled battery sheet
Convenience, low cost, low series resistance, resistance to hidden split, the back contact solar cell of high efficiency, high stability
Module, assembly and preparation technology thereof.
It is a kind of without main grid, the main technical schemes of high efficiency back contact solar cell module that the present invention provides
For:
This solar module includes that cell piece and electric connection layer, the shady face of described cell piece have and P
P electrode that type doped layer connects and the N electrode that is connected with n-type doping layer, it is characterised in that be electrically connected described in:
Connecing layer and include finger electrode more than two, the described finger electrode of each group becomes interdigitated alternately arranged, described finger-like
Electrode electrically connects with P electrode or N electrode, the described one-tenth interdigited electrode of arranged adjacent and different shaped doped layer
Electrode electrically connects.
The one of the present invention can also use the most attached without main grid, high efficiency back contact solar cell module
Technical scheme:
Described electric connection layer is three-decker, and ground floor is conductive material layer, and the second layer is resistance to deformation layer, the
The material of three layers is the material same or like with the coefficient of thermal expansion and contraction of ground floor material, interdigitated alternately row
The finger electrode of row is arranged on described conductive material layer.
Described conductive material layer is aluminium-plastic panel, copper moulds plate, silver moulds any one in plate, and described resistance to deformation layer is
Foaming PET material, the material of described third layer is identical with the conductive material of ground floor.
Described finger electrode is coated with any one in layers of copper, silver layer or aluminium lamination.
The shape being shaped as bending of finger electrode finger on described electric connection layer.
The finger of described finger electrode is provided with secondary grid or conducting particles, is used for collecting electronics, described secondary grid
Or conducting particles is connected with electrode.
Described P electrode is point-like P electrode or line style P electrode, described N electrode be point-like N electrode or
Person's line style N electrode.
A diameter of 0.4mm～1.5mm of described point-like P electrode, connects with the same finger of described finger electrode
Distance between two the adjacent point-like P electrode connect is 0.7mm～10mm, the width of described line style P electrode
Degree is 0.4mm～1.5mm；A diameter of 0.4mm～1.5mm of described point-like N electrode, with described finger-like
Distance 0.7mm between two adjacent point-like N electrode of the same finger of electrode～10mm, described line style
The width of N electrode is 0.4mm～1.5mm.
Total number of described point-like P electrode and described point-like N electrode is 1000～40000.
Described Spot electrodes or wire-type of electrode are arbitrary in silver slurry, conducting polymer, conducting resinl or scolding tin
Kind.
Connect with described P electrode and and described N electrode connects and between the finger of adjacent finger electrode away from
From for 0.1mm～20mm.
The shape of cross section of described finger electrode finger is circular, square or any one in ellipse；Described
The circumscribed circle diameter of finger electrode finger shape of cross section is 0.05mm～1.5mm.
Surface, described finger electrode finger is coated with low melting material or is coated with conducting resinl.
Described low melting material is any one in stannum, leypewter, sn-bi alloy or tin-lead silver alloy；Institute
Thickness of coating or the conductive adhesive layer thickness of stating finger electrode finger are 5 μm～50 μm.
The quantity of described finger electrode finger is 10～500.
Bus bar electrode is arranged on the base portion of finger electrode, and the surface of bus bar electrode has concaveconvex shape.
Described conducting resinl is low resistivity conductive bonded adhesives, and it is mainly composed of conducting particles and polymeric adhesion
Agent.
Conducting particles in described conducting resinl is appointing in gold, silver, copper, gold-plated nickel, silver-plated nickel or silver-plated copper
The mixing of one or more；Being shaped as of described conducting particles is spherical, appointing in lamellar, olive-shaped or needle-like
The mixing of one or more；The particle diameter of conducting particles is 0.01 μm～5 μm.
Polymeric adhesive in described conducting resinl is epoxy resin, polyurethane resin, acrylic resin or has
Any one in machine silicones or several mixing, described bonding agent can be with heat cure or photocuring.
Thermoplastic resin or thermosetting tree it is provided with at insulating barrier between described P electrode and described N electrode
Fat.
Described resin be ethylene-vinyl acetate copolymer, vistanex, epoxy resin, polyurethane resin,
In acrylic resin, organic siliconresin any one or appoint several.
It is a kind of without main grid, the main technical schemes of high efficiency back contact solar cell assembly that the present invention provides
For:
Including the front layer material from top to bottom connected, encapsulating material, solar cell layer, encapsulating material, the back of the body
Layer material, it is characterised in that: described solar cell layer includes several solar modules, described too
Sun can battery module be the solar module described in technique scheme, and described solar module leads to
Cross the bus bar electrode electrical connection that the base portion of finger electrode is arranged.
The one that the present invention provides can also include following without main grid, high efficiency back contact solar cell assembly
Technical scheme:
The cell piece number of described solar cell layer is 1～120, wherein, including 1～120 battery module,
Described battery module includes 1～120 cell piece.
The quantity of the cell piece number in cell piece number that assembly comprises, battery module number, battery module
Can be limited by below equation；Z represents the cell piece number that battery component is total, and Y represents described battery module
Number, X represents the cell piece number that described battery module comprises, wherein 1≤Y≤X≤Z；X × Y=Z；；
As X=1, the length of a length of one piece of cell piece of the finger of a finger electrode；It is integrated as Y=1
Change and connect, i.e. the finger of a finger electrode connects all cell pieces of battery component.
Without main grid, the preparation method of high efficiency back contact solar cell assembly, comprise the following steps:
The first step: prepare battery module, molding finger electrode on electric connection layer；By a group or more
Described finger electrode electrically connect with P electrode or N electrode, by a group or more finger electrode with another
The electrode electrical connection of one doping type；The described finger electrode of each group becomes interdigitated alternately arranged, arranged adjacent
Described one-tenth interdigited electrode electrically connects with different shaped doped layer electrode；Base portion in finger electrode arranges busbar
Electrode；
Step 2: prepare solar cell layer, solar module step 1 prepared passes through busbar
Electrode electrically connects, and is prepared as solar cell layer；
Step 3: carry out stacking, layer by front layer material, solar cell layer, the order of backsheet successively
Pressure obtains battery component.
The preparation method without main grid, high efficiency back contact solar cell assembly that the present invention provides can also be wrapped
Include techniques below scheme:
Interdigited electrode on described electric connection layer uses conducting medium to print just curing molding.
Described electric connection layer is three-decker, and ground floor is conductive material layer, and the second layer is resistance to deformation layer, the
The material of three layers is the material same or like with the coefficient of thermal expansion and contraction of ground floor material, is conducted electricity by ground floor
Material is scribed or punching press is finger electrode, and finger electrode is gluing with resistance to deformation layer, third layer material layer successively
Laminating, then finger electrode is electrically connected with P electrode or the N electrode of cell piece.
The one side of electric connection layer is pasted one layer of glue, then carries out scribing or punching press；And at described bus bar electrode
On scribe concaveconvex shape.
Described in step one, the P electrode on cell piece and N electrode have mirror symmetrical structure in the horizontal plane,
When the quantity of cell piece is more than 1, the mode of assembled battery sheet is, by first piece of cell piece and electric connection layer
After connection, second piece of cell piece is revolved turnback, two panels cell piece justified margin at horizontal plane, makes second
P electrode on block cell piece and the N electrode on first piece of cell piece are on the finger of a finger electrode, so
The 3rd back contact battery of rear normal placement, makes the P electrode on the 3rd piece of cell piece and second piece of cell piece
N electrode, on the finger of a finger electrode, repeats aforesaid operations and forms cascaded structure, form solar-electricity
Pond layer.
The finger of described finger electrode uses plating process to be coated with low melting material, and described low melting material is weldering
Any one in stannum, leypewter, sn-bi alloy or tin-lead silver alloy, heated after make the finger of finger electrode
Portion is welded and fixed by low melting material thawing with P electrode or N electrode, makes finger and the battery of finger electrode
Sheet electrically connects.
Described heating fixation procedure uses heating cushion in cell piece front；The heating-up temperature of described heating cushion is
40～80 DEG C.
Described mode of heating is any one in infra-red radiation, Resistant heating or Hot-blast Heating, heating temperature
Degree is 150～500 DEG C.
The parameter of described lamination is set according to the vulcanization characteristics of encapsulating material, and described encapsulating material is EVA,
It is 145 DEG C of laminated 16 minutes.
The plating process of the finger of electric connection layer finger electrode is any one in hot-dip, plating or chemical plating.
It is characterized in that: be coated with in the way of cold plating or plating in described finger electrode in aluminum, copper, silver appoints
A kind of；The mode of described cold plating is that after being mixed with air by metal powder, high pressure sprays.
The enforcement of the present invention includes techniques below effect:
1, the present invention propose a kind of use the technology without main grid comb teeth-shaped structure electric connection layer to realize large scale the back of the body
The series connection contacting solar cell the method making corresponding solar components.This technology need not IBC electricity
Between P or the N emitter stage that pond is adjacent, silk screen printing carefully silver slurry grid line, can be greatly reduced the consumption of silver slurry,
Thus reduce the manufacturing cost of IBC battery and simplify manufacturing process flow.
2, back contact solar cell used herein is without main grid, is substantially reduced the usage amount of silver slurry, makes
The manufacturing cost of back contact battery substantially reduces；One is that transformation efficiency is high, and two is that packaging efficiency is high, disappears
Except the shading of front gate line electrode is lost, thus improve battery efficiency；
3, in the present invention, electrode of solar battery contacts with electric connection layer multiple spot distributing, reduce electronics collect away from
From, the series resistance of assembly is greatly lowered.Also can realize the sheet of battery, the metal being used in series is even
Connect device all at cell backside, there is not the connection from front to the back side and can use thinner silicon chip, thus
Reduce cost；
4, practicality is higher, and the back contacts solar cell of the present invention is generally applicable to MWT, EWT and IBC
Deng various structures；
5, resistance to hidden splitting, the integrated photovoltaic system of assembly that the technology of the present invention produces can thoroughly be avoided because of one block of electricity
Pond sheet generation is hidden to be split and loses certain electric current and cause the electric current of whole group of string will to occur that significantly reduces asking
Topic, the back of the body winding displacement technology of comb without main grid proposed due to this invention achieves between electric conductor and cell piece
Mulit-point Connection, can improve whole system hidden to produce during manufacturing, transport, install and using
Split the tolerance with fine fisssure.
Secondary grid or conducting particles the migration distance that can reduce electronics and hole is set, strengthen cell piece and receive
The ability of set electron.Bus bar electrode concaveconvex shape the contact area that can increase electrode is set, reduce electricity
Resistance.
This technology need not use conductive adhesive technique, thus save the cost of conducting resinl and avoid conducting resinl
Need the series of technical such as Accurate Points glue.This technology can realize welding between electric conductor with cell piece,
The long-term reliability of assembly can be increased substantially.In assembly prepared by this technology, IBC battery and electric conductor
Between be Mulit-point Connection, junction point distribution is more dense, can reach thousand of even several ten thousand, splits silicon chip is hidden
More optimizing with the path of fine fisssure position electric current conduction, the loss therefore caused based on fine fisssure is greatly reduced,
The Quality advance of product.Generally in photovoltaic system, cell piece generation is hidden splits rear cell piece upper part region meeting
Departing from main grid, the electric current that this region produces will be unable to be collected.Photovoltaic system is all to use series connection
Mode forms matrix, has obvious bucket effect, when one piece of cell piece occurs hidden split and lose certain electricity
During stream, the electric current of whole group of string will occur significantly to reduce, thus cause the generating efficiency of whole group of string significantly
Reduce.The integrated photovoltaic system of the assembly that uses this technology to produce can thoroughly avoid problems to occur, by
The comb without main grid proposed in this invention carries on the back the multiple spot company that winding displacement technology achieves between electric conductor and cell piece
Connect, make whole photovoltaic system that the hidden of generation during manufacturing, transport, install and using to be split and fine fisssure
Trace has high tolerance.Can illustrate by a simply example, the solar energy that conventional art produces
Assembly similarly is common glass, and a point has been crashed monolithic glass and just pulverized, and with without main grid comb
The assembly that back of the body winding displacement technology produces seems then doubling safety glass, and some fragmentation seems the most beautiful in appearance
See, but the function keeped out wind and rain of whole glass also exists.The traditional set of cells string work of this technological break-through
Skill, makes battery arrangement freer, more closely, uses the assembly of above-mentioned technology to be expected to the least lighter, to downstream
For project development, this means that floor space less in installation, lower roof load-bearing requirements and more
Low human cost.Low cost, high efficiency back contacts solar cell can be solved without main grid back of the body winding displacement technology
Connectivity problem, by use copper cash replace silver main grid reduce cost, it is achieved back contacts solar cell is real
Industrial-scale production, reduces cost while improving efficiency, provides in hgher efficiency for photovoltaic system, becomes
This is the lowest, stability is higher, resistance to hidden split outstanding photovoltaic module, is greatly promoted photovoltaic system and tradition energy
The competitiveness in source.
Back contact solar cell overall structure used herein is basic with conventional back contact solar cell
Unanimously, but complete after silver slurry sintering is tested with power stepping at its launch site electricity at back contact solar cell
Thermoplasticity or heat cured resin on silk screen printing at insulating barrier between pole and base electrode.This resin one side
Separation insulating emitter region electrode and the effect of base electrode can be played in face, on the one hand plays in lamination process
Bonding back contact solar cell sheet and the effect of backboard.
Accompanying drawing explanation
Fig. 1. Spot electrodes back contact solar cell schematic rear view
Fig. 2. wire-type of electrode back contact solar cell schematic rear view
Fig. 3. (Fig. 3 a, finger electrode finger sectional view, Fig. 3 b, have two-layer material to the finger sectional view of finger electrode
Material finger electrode finger sectional view, Fig. 3 c, there is trilaminate material finger electrode finger sectional view)
Fig. 4. comb structure schematic diagram
Fig. 5. battery modular structure schematic diagram 1
Fig. 6. battery modular structure schematic diagram 2
Fig. 7. battery modular structure schematic diagram 3
Fig. 8. solar module connection diagram 1
Fig. 9. solar module connection diagram 2
Figure 10. back contact solar cell sectional view
Figure 11. load onto the solar module schematic diagram of cell piece
1, for metal materials such as copper, aluminum or steel；2, it is the metal materials such as the aluminum different from 1 or steel；3、
For stannum, tin-lead, stannum bismuth or tin-lead silver metal solder；4, n-type doping layer；41, line style N electrode；
42, the finger of the finger electrode that point-like N electrode 43 is connected with N electrode；44, conductor wire；5, p-type
Doped layer；51, line style P electrode；52, point-like P electrode；53 finger electrodes being connected with P electrode
Finger；6, n type single crystal silicon matrix；7, insulating barrier；8, backsheet；81, front layer material；91、P
Electrode converging bar；92, N electrode busbar；10, solar cell layer；11, encapsulating material.
Detailed description of the invention
Below in conjunction with embodiment and accompanying drawing, the present invention is described in detail, it should be pointed out that retouched
The embodiment stated is intended merely to facilitate the understanding of the present invention, and it does not play any restriction effect.
Embodiment 1
See Fig. 1, Fig. 3, Fig. 4, Fig. 6, the present embodiment provided without main grid, high efficiency back contacts too
Sun energy battery module, this solar module includes cell piece and electric connection layer, the backlight of described cell piece
Mask has the P electrode being connected with p-type doped layer and the N electrode being connected with n-type doping layer, described electrical connection
Layer can be finger electrode more than two, and the described finger electrode of each group becomes interdigitated alternately arranged, described finger-like
Electrode electrically connects with P electrode or N electrode, the described one-tenth interdigited electrode of arranged adjacent and different shaped doped layer
Electrode electrically connects.Thermoplastic resin or heat it is provided with at insulating barrier between described P electrode and described N electrode
Thermosetting resin, described resin is ethylene-vinyl acetate copolymer, vistanex, epoxy resin, polyurethane
Any one in resin, acrylic resin, organic siliconresin, the present embodiment optimal ethylene-vinyl acetate copolymerization
Thing, can prevent the short circuit between electrode.
Seeing Fig. 1, described cell piece is n type single crystal silicon matrix silicon 6, and described P electrode is point-like P electrode
52, described N electrode is point-like N electrode 42, described point-like P electrode 52 and described point-like N electrode 42
It is located at the back side of silicon substrate, point-like P electrode 52 and point-like N electrode 42 to be arranged alternately with each other at silicon substrate
The back side, point-like P electrode 52 is provided with anelectrode contact point, and point-like N electrode 42 is provided with negative electrode contact
Point.The a diameter of 0.8mm of point-like P electrode 52, the distance between adjacent point-like P electrode 52 is 1.5mm.
The a diameter of 0.7mm of point-like N electrode 42, the distance between adjacent point-like N electrode 42 is 1.5mm, point-like
Centre distance between P electrode 52 line and point-like N electrode 42 line is 15mm, described point-like P electricity
Total number of pole 52 and described point-like N electrode 42 is 1000～40000, the present embodiment preferably 2080
Individual；The setting of above-mentioned Spot electrodes design parameter is convenient in the present embodiment to be connected, can preferable collected current.
Cell conversion efficiency is 20.2%.
Seeing Fig. 3, Fig. 4, Fig. 6, described electric connection layer can include finger electrode more than two, each group
Described finger electrode becomes interdigitated alternately arranged, and described finger electrode electrically connects with P electrode or N electrode, phase
The described one-tenth interdigited electrode of adjacent arrangement electrically connects with different shaped doped layer electrode.Described bus bar electrode is arranged
At the base portion of finger electrode, the surface of bus bar electrode has concaveconvex shape, can increase bus bar electrode
Ohmic contact area, reduces resistance；Electric connection layer described in the present embodiment is three-decker, and ground floor is aluminum
Moulding flaggy, the second layer is pet layer, and third layer is plastic-aluminum flaggy, and the alternately arranged finger electrode of interdigitated sets
Putting on described aluminium-plastic panel, in the present embodiment, the surface, finger electrode finger of aluminium is coated with scolding tin；Described finger-like
Being provided with secondary grid on the finger of electrode, be used for collecting electronics, described secondary grid are connected with electrode.Wherein pet layer
With thick aluminum layer good rigidity, foaming PET layer can resist the deformation that problems with causes: 1, the same metal of silicon plate
Layer bonding, because expanding with heat and contract with cold, the stress that the temperature difference produces；2, punching press or the stress that produces when scribing thin aluminum sheet.
Solve stress problem so that aluminium-plastic panel is difficult to flexural deformation.
Seeing Fig. 1, described conductive electrode contact point includes any one in silver slurry, conducting resinl or scolding tin, this reality
Execute the preferred conducting resinl of example, the conducting particles in described conducting resinl be gold, silver, copper, gold-plated nickel, silver-plated nickel or
Any one in silver-plated copper, the preferred copper of the present embodiment；Described conducting resinl is low resistivity conductive bonded adhesives, its
It is mainly composed of conducting particles and polymeric adhesive；Being shaped as of described conducting particles is spherical, lamellar, olive
Any one in olive shape, needle-like, the preferred needle-like of the present embodiment；The particle diameter of conducting particles is 0.01 μm～5 μm,
The present embodiment preferably 5 μm.Polymeric adhesive in described conducting resinl be epoxy resin, polyurethane resin,
Any one in acrylic resin, organic siliconresin, the present embodiment preferred epoxy, and thermosetting can be carried out
Changing or photocuring, preparation technology is simple.
Seeing figure Fig. 9 and 10, the one that the present embodiment is provided is without main grid, high efficiency back contact solar electricity
Pond assembly includes the front layer material 81 from top to bottom connected, encapsulating material 11, solar cell layer 10, encapsulates material
Material 11, backsheet 8, described solar cell layer 10 includes several solar modules；Described solar energy
The bus bar electrode that battery module is arranged by the base portion of finger electrode electrically connects.The heretofore described sun
Energy battery module can include two or more finger electrode, and described solar module is permissible
Including one piece of cell piece or the cell piece of more than two pieces；In the present embodiment, one group of finger electrode connects one block of electricity
Pond sheet one battery module of composition；Solar module of the present invention can include one or two
Above described solar module.
A kind of without main grid, the preparation method of high efficiency back contact solar cell assembly, mainly include following step
Rapid:
As shown in Figure 6, in the present embodiment, one group of finger electrode connects one piece of cell piece one battery module of composition；
Thin aluminium-plastic panel is scribed or punching press is finger electrode, then by finger electrode successively with pet layer, thick plastic-aluminum flaggy
Gluing laminating, then finger electrode is electrically connected with point-like P electrode 52 or the point-like N electrode 42 of cell piece；
Described electric connection mode is electric cautery welding, and the temperature of welding is 300～400 DEG C, and the present embodiment is preferred
300 DEG C, welding process can use heating cushion cause electricity with prevention battery two sides excessive temperature differentials in cell piece front
The fragment of pond sheet or hidden split, heating pad temperature controls at 40～80 DEG C, the present embodiment preferably 70 DEG C；Described
The base portion etching concaveconvex shape of finger electrode forms bus bar electrode, is prepared as solar module；
As it is shown in figure 9, series connection bus bar electrode, produce the cell piece module of 32 back contacts.Press successively
Order according to glass, EVA, cell piece module, EVA and backsheet 8 carries out stacking and visual examination,
Module after stacking being sent into laminating machine be laminated, laminating parameters sets according to the vulcanization characteristics of EVA
Fixed, usually 145 DEG C of laminated 16 minutes.The module finally lamination completed carry out install metal edge frame,
Installing rosette and carry out power test and visual examination, the sensitive surface of described solar module is provided with
There is the fluoropolymer membrane material that weather resisteant is good.Obtain solar module.As shown in figure 11, its sectional view such as figure
Shown in 10.
The power parameter of above-mentioned 32 back contacts assemblies is as follows:
Open-circuit voltage Uoc (V) 22.25
Short circuit current Isc (A) 9.25
Running voltage Ump (V) 17.27
Operating current Imp (A) 9.08
Peak power Pmax (W) 156.78
Fill factor, curve factor 76.18%
Embodiment 2
See Fig. 2, Fig. 3, Fig. 4, Fig. 5, the present embodiment provided without main grid, high efficiency back contacts too
Sun energy battery module, this solar module includes that cell piece and electric connection layer, described cell piece are IBC
Battery, the shady face of described cell piece has the P electrode being connected with p-type doped layer and connects with n-type doping layer
The N electrode connect, described electric connection layer can be finger electrode more than two, and each described finger electrode one-tenth of organizing is pitched
Finger-like is alternately arranged, and described finger electrode electrically connects with P electrode or N electrode, the described one-tenth fork of arranged adjacent
Finger electrode electrically connects with different shaped doped layer electrode.Insulating barrier between described P electrode and described N electrode
Place is provided with thermoplastic resin or thermosetting resin, and described resin is ethylene-vinyl acetate copolymer, polyolefin
Any one in resin, epoxy resin, polyurethane resin, acrylic resin, organic siliconresin, this enforcement
Example preferred epoxy, can prevent the short circuit between electrode.
Seeing Fig. 2, described cell piece is n type single crystal silicon matrix silicon, and described P electrode is line style P electrode 51,
Described N electrode is line style N electrode 41, and described line style P electrode 51 and described line style N electrode 41 are located at
The back side of silicon substrate, line style P electrode 51 and line style N electrode 41 are arranged alternately with each other the back side at silicon substrate,
Line style P electrode 51 is provided with anelectrode contact area, and line style N electrode 41 is provided with negative electrode contact area.Line
Type P electrode 51 width 0.7mm, distance 2.5mm between adjacent line style P electrode 51.Line style N electrode
41 width 0.5mm, distance 2.5mm between adjacent line style N electrode 41, line style P electrode 51 line
And the centre distance between line style N electrode 41 line is 1.5mm, setting of above-mentioned Spot electrodes design parameter
Put convenient in the present embodiment connection, can preferable collected current.Cell conversion efficiency is 20.2%.
Ginseng Fig. 4, Fig. 5, described electric connection layer can include finger electrode more than two, the described finger-like of each group
Electrode becomes interdigitated alternately arranged, and described finger electrode electrically connects with P electrode or N electrode, arranged adjacent
Described one-tenth interdigited electrode electrically connects with different shaped doped layer electrode.The finger of described finger electrode can be curved
Bent shape, such as zigzag, so can increase between the finger of finger electrode and cell piece doped layer
The collection of gross contact area, beneficially electronics.Battery module in the present embodiment includes multiple cell piece, such as figure
Shown in 5, finger electrode is arranged at the two ends of battery module, and described bus bar electrode is arranged on finger electrode
Base portion, the surface of bus bar electrode has concaveconvex shape, can increase electrode contact area, reduces resistance；
Being provided with secondary grid on the finger of described finger electrode, be used for collecting electronics, described secondary grid are connected with electrode.
The finger of described finger electrode is provided with conductive bumps, described conductive bumps and described line style P electrode 51 or
Described line style N electrode 41 electrically connects；The height of described conductive bumps structure is 250 microns～400 microns,
The present embodiment preferably 300 microns, the shape of described conductive bumps is selected from cylinder, cone, parallel hexahedro
Any one in body, prism, the preferred cone of the present embodiment.The setting of described conductive bumps is beneficial to electric conductivity
Compact siro spinning technology with cell piece electrode.
Seeing Fig. 8 and 10, the one that the present embodiment is provided is without main grid, high efficiency back contact solar cell
Assembly includes the front layer material 81 from top to bottom connected, encapsulating material 11, solar cell layer 10, encapsulates material
Material 11, backsheet 8, described solar cell layer 10 includes several solar modules.The present embodiment
In multiple cell pieces composition one battery module, described assembly comprises multiple battery module；Described solar-electricity
The bus bar electrode that pond module is arranged by the base portion of finger electrode electrically connects.
A kind of without main grid, the preparation method of high efficiency back contact solar cell assembly:
Prepare battery module, molding finger electrode on electric connection layer；Described electric connection layer is three-decker,
Ground floor is conductive material layer, and the second layer is resistance to deformation layer, and the material of third layer is and the heat of ground floor material
The material that swollen contraction coefficients is same or like, scribes ground floor conductive material or punching press is finger electrode, will
Finger electrode is gluing laminating with resistance to deformation layer, third layer material layer successively, then by finger electrode and cell piece
P electrode or N electrode electrical connection.By a group or more described finger electrode and P electrode or N electrode
Electrical connection, electrically connects a group or more finger electrode with the electrode of another doping type；Respectively organize institute
Stating finger electrode becomes interdigitated alternately arranged, the described one-tenth interdigited electrode of arranged adjacent and different shaped doped layer
Electrode electrically connects；Base portion in finger electrode arranges bus bar electrode；
With reference to Fig. 5, described one group of finger electrode connects the P electrode of battery strings, the base portion of described finger electrode
Arranging P bus bar electrode 91, can use conductor wire 44 series cells in the middle of battery strings, another group refers to
Shape electrode is used for connecting N electrode, and the base portion of this finger electrode arranges N bus bar electrode 92.Cell piece
Method of attachment, welds the line style N electrode 41 of first battery with a finger electrode, then by a diameter of
The conductor wire of the tin coating of a length of 298mm of 1.3mm stretches the back side tightened according to back contacts solar cell
Figure is bonded in the line style P electrode 51 of cell piece；When the finger first cell piece Yu described finger electrode
Behind portion and conductor wire welding, in order to make first cell piece P doped layer and the N of second cell piece mix
Diamicton connects, and at horizontal plane, second back contacts solar cell is revolved turnback, makes two panels battery edge pair
Together, these coating conductor wires also inevitable line style N electrode 41 first solar battery sheet and the simultaneously
The p-type contact area alignment of two back contacts solar cells.The most normally place the 3rd back contacts solar cell,
Make line style N electrode 41 and line style P of the 3rd back contacts solar cell of second back contacts solar cell
Electrode 51 aligns, and by that analogy, puts well after needing the cell piece number laid, a finger electrode and
The line style P electrode 51 of a rear cell piece electrically connects, and cell piece a string in the present embodiment is 10.Peace
After installing cell piece, coating conductor wire applies a small amount of external force and makes coating conductor wire and back contacts sun electricity
On pond, contact area is in close contact, and makes first back contacts solar cell coating conductor wire now by Infrared Heating
On alloy-layer melt coating conductor wire and back contacts solar cell are welded together, complete the back contacts sun
The welding of battery.It is prepared as solar module；
The busbar of the battery module as shown in Figure 5 manufacture completed connects, and produces 6 strings, often goes here and there 10
Sheet, the cell piece module of totally 60 back contacts.Successively according to glass, EVA, cell piece module, EVA
Carry out stacking and visual examination with the order of backsheet 8, the module after stacking is sent into laminating machine and carries out layer
Pressure, laminating parameters is set according to the vulcanization characteristics of EVA, usually 145 DEG C of laminated 16 minutes.
The module finally completed by lamination carries out installing metal edge frame, installing rosette and carry out power test and outward appearance
Check.Obtain battery component.As shown in Figure 10 and Figure 11.
The power parameter of above-mentioned 60 back contacts assemblies is as follows:
Open-circuit voltage Uoc (V) 40.36
Short circuit current Isc (A) 9.34
Running voltage μm p (V) 31.78
Operating current Imp (A) 9.25
Peak power Pmax (W) 293.96
Fill factor, curve factor 77.98%
Embodiment 3
Seeing Fig. 1, Fig. 3, Fig. 4, Fig. 7, the one that the present embodiment is provided connects without main grid, the high efficiency back of the body
Touching solar module, this solar module includes cell piece and electric connection layer, described cell piece
Shady face has the P electrode being connected with p-type doped layer and the N electrode being connected with n-type doping layer.Described P
Thermoplastic resin or thermosetting resin, described resin it is provided with at insulating barrier between electrode and described N electrode
For ethylene-vinyl acetate copolymer, vistanex, epoxy resin, polyurethane resin, acrylic resin,
Any one in organic siliconresin, the preferred organic siliconresin of the present embodiment, the short circuit between electrode can be prevented.
Seeing Fig. 1, described cell piece is n type single crystal silicon matrix silicon, and described P electrode is point-like P electrode 52,
Described N electrode is point-like N electrode 42, and described point-like P electrode 52 and described point-like N electrode 42 are located at
The back side of silicon substrate, point-like P electrode 52 and point-like N electrode 42 are arranged alternately with each other the back side at silicon substrate,
Point-like P electrode 52 and point-like N electrode 42 are arranged alternately with each other, point-like P electrode 52 and point-like N electrode
Total number of 42 is 24200.The a diameter of 0.5mm of point-like P electrode 52, adjacent point-like P electrode 52 it
Between distance be 1.4mm.The a diameter of 0.4mm of point-like N electrode 42, between adjacent point-like N electrode 42
Distance is 1.4mm, and the centre distance between point-like P electrode 52 line and point-like N electrode 42 line is
1.4mm.Electrode contact point is soldering tin material；The setting of above-mentioned Spot electrodes design parameter is in the present embodiment
Convenient connection, can preferable collected current.Cell conversion efficiency is 20.8%.
Seeing Fig. 3, Fig. 4, Fig. 7, described electric connection layer can include finger electrode more than two, each group
Described finger electrode becomes interdigitated alternately arranged, and described finger electrode electrically connects with P electrode or N electrode, phase
The described one-tenth interdigited electrode of adjacent arrangement electrically connects with different shaped doped layer electrode.Described bus bar electrode is arranged
At the base portion of finger electrode, the surface of bus bar electrode has concaveconvex shape, can increase electrode contact area,
Reduce resistance；Interdigited electrode on electric connection layer described in the present embodiment uses conducting medium printing just to solidify
Molding；Described conducting medium is conducting resinl, and the technology being added curing molding by printing is printed as fork conducting resinl
Finger electrode is fixed on electric connection layer.Printing technique can accurately realize the molding of a lot of interdigited electrode,
Can conveniently realize thinner finger electrode, the molding organizing interdigital electrode more, simple to operate, and can pass through
Cross-linking reaction in solidification process gets up conducting medium and electric connection layer chemical covalent binding, it is achieved forever jail
Adhere and connect.
Described Spot electrodes of leading includes any one in silver slurry, conducting resinl or scolding tin, and the present embodiment preferably conducts electricity
Glue, the conducting particles in described conducting resinl is appointing in gold, silver, copper, gold-plated nickel, silver-plated nickel or silver-plated copper
One, the preferred copper of the present embodiment；Described conducting resinl is low resistivity conductive bonded adhesives, and it is mainly composed of leads
Charged particle and polymeric adhesive；Being shaped as of described conducting particles is spherical, in lamellar, olive-shaped, needle-like
Any one, the preferred needle-like of the present embodiment；The particle diameter of conducting particles is 0.01 μm～5 μm, and the present embodiment is excellent
Select 5 μm.Polymeric adhesive in described conducting resinl be epoxy resin, polyurethane resin, acrylic resin,
Any one in organic siliconresin, the present embodiment preferred epoxy, and heat cure or photocuring can be carried out,
Preparation technology is simple.
The one that the present embodiment is provided includes by up to without main grid, high efficiency back contact solar cell assembly
The front layer material 81 of lower connection, encapsulating material 11, solar cell layer 10, encapsulating material 11, backsheet 8,
Described solar cell layer 10 includes several solar modules；Described solar module passes through finger-like
The bus bar electrode electrical connection that the base portion of electrode is arranged.In the present embodiment, one group of finger electrode connects polylith battery
Sheet one battery module of composition, as shown in Figure 7.
A kind of without main grid, the preparation method of high efficiency back contact solar cell assembly, mainly include following step
Rapid:
By the technology of printing shaping, conducting resinl is printed as interdigited electrode to be solidificated on electric connection layer, then will
Finger electrode electrically connects with point-like P electrode 52 or the point-like N electrode 42 of multiple cell pieces；Install battery
After sheet, electric connection layer applies a small amount of external force and makes the finger electrode on electric connection layer and back contacts sun electricity
On pond, contact point is in close contact, now by scolding tin by the Spot electrodes of first back contacts solar cell and finger
The finger of shape electrode welds together, and completes the welding of back contacts solar cell.Welding temperature be 300～
400 DEG C, the present embodiment preferably 400 DEG C, welding process can use heating cushion with pre-anti-electric in cell piece front
Two sides, pond excessive temperature differentials causes the fragment of cell piece or hidden splits, and heating pad temperature controls at 40～80 DEG C, this reality
Execute example preferably 80 DEG C；At the root molding bus bar electrode of described finger electrode, it is prepared as solaode mould
Block；Seeing Fig. 7, one group of finger electrode can connect polylith cell piece.
As it is shown in fig. 7, connection bus bar electrode, produce 6 strings, often string 6, totally 36 back contacts
Cell piece module.Enter according to the order of glass, EVA, cell piece module, EVA and backsheet 8 successively
Row stacking and visual examination, send the module after stacking into laminating machine and be laminated, and laminating parameters is according to EVA
Vulcanization characteristics be set, usually 145 DEG C of laminated 16 minutes.Finally the module that lamination completes is entered
Row is installed metal edge frame, is installed rosette and carry out power test and visual examination.Obtain battery component.As
Shown in Figure 10 and Figure 11.
The power parameter of above-mentioned 36 back contacts assemblies is as follows:
Open-circuit voltage Uoc (V) 24.84
Short circuit current Isc (A) 9.31
Running voltage Ump (V) 19.73
Operating current Imp (A) 9.05
Peak power Pmax (W) 178.59
Fill factor, curve factor 77.22%
From the experiment parameter of embodiment 1-3, the present invention back contact solar cell module institute prepared
The solar module constituted can obtain the highest fill factor, curve factor, thus improves the generating efficiency of assembly.
Can effectively prevent the short circuit between P electrode and N electrode, resistance to hidden split, high efficiency, high stability, simultaneously
There is preparation technology simple, the advantage that cost is substantially reduced.
Last it should be noted that, above example is only in order to illustrate technical scheme, rather than to this
The restriction of invention protection domain, although having made to explain to the present invention with reference to preferred embodiment, this area
It is to be appreciated by one skilled in the art that technical scheme can be modified or equivalent,
Spirit and scope without deviating from technical solution of the present invention.
Claims (31)
1., without main grid, high efficiency back contact solar cell module, this solar module includes
Cell piece and electric connection layer, the shady face of described cell piece has the P electrode being connected with p-type doped layer
And the N electrode being connected with n-type doping layer, it is characterised in that: described electric connection layer is three-layered node
Structure, ground floor is conductive material layer, and the second layer is resistance to deformation layer, and the material of third layer is and ground floor
The material that the coefficient of thermal expansion and contraction of material is same or like, ground floor conductive material is scribed or punching press is finger
Shape electrode, finger electrode is gluing laminating with resistance to deformation layer, third layer material layer successively；Described electrical connection
Layer includes finger electrode more than two, and the described finger electrode of each group becomes interdigitated alternately arranged, described finger
Shape electrode electrically connects with P electrode or N electrode, the finger electrode of the one-tenth interdigitated of arranged adjacent with not
The electrode electrical connection of homotype doped layer.
It is the most according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: described conductive material layer is aluminium-plastic panel, copper moulds plate, silver moulds any one in plate, institute
Stating resistance to deformation layer is foaming PET material, the conductive material phase of the material of described third layer and ground floor
With.
It is the most according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: described finger electrode is coated with any one in layers of copper, silver layer or aluminium lamination.
It is the most according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: the shape being shaped as bending of finger electrode finger on described electric connection layer.
It is the most according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: the finger of described finger electrode is provided with secondary grid or conducting particles, is used for collecting electricity
Son, described secondary grid or conducting particles are connected with electrode.
It is the most according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: described P electrode is point-like P electrode or line style P electrode, and described N electrode is
Point-like N electrode or line style N electrode.
It is the most according to claim 6 without main grid, high efficiency back contact solar cell module,
It is characterized in that: a diameter of 0.4mm～1.5mm of described point-like P electrode, with described finger electrode
Same finger connect two adjacent point-like P electrode between distance be 0.7mm～10mm, institute
The width stating line style P electrode is 0.4mm～1.5mm；Described point-like N electrode a diameter of
0.4mm～1.5mm, between point-like N electrode adjacent with two of the same finger of described finger electrode
Distance 0.7mm～10mm, the width of described line style N electrode is 0.4mm～1.5mm.
It is the most according to claim 6 without main grid, high efficiency back contact solar cell module,
It is characterized in that: total number of described point-like P electrode and described point-like N electrode is 1000～40000
Individual.
It is the most according to claim 6 without main grid, high efficiency back contact solar cell module,
It is characterized in that: Spot electrodes or wire-type of electrode are silver slurry, conducting polymer, conducting resinl or scolding tin
In any one.
It is the most according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: connect with described P electrode and connect with described N electrode and adjacent finger electrode
Finger between distance be 0.1mm～20mm.
11. is according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: the shape of cross section of described finger electrode finger is circular, square or in ellipse
Any one；The circumscribed circle diameter of described finger electrode finger shape of cross section is 0.05mm～1.5mm.
12. is according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: surface, described finger electrode finger is coated with low melting material or is coated with conducting resinl.
13. is according to claim 12 without main grid, high efficiency back contact solar cell mould
Block, it is characterised in that: described low melting material is that stannum, leypewter, sn-bi alloy or tin-lead silver close
Any one in gold；The thickness of coating of described finger electrode finger or conductive adhesive layer thickness be 5 μm～
50μm。
14. is according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: the quantity of described finger electrode finger is 10～500.
15. is according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: bus bar electrode is arranged on the base portion of finger electrode, the surface of bus bar electrode has
Concaveconvex shape.
16. is according to claim 12 without main grid, high efficiency back contact solar cell mould
Block, it is characterised in that: described conducting resinl is low resistivity conductive bonded adhesives, and it is mainly composed of conduction
Particle and polymeric adhesive.
17. is according to claim 16 without main grid, high efficiency back contact solar cell mould
Block, it is characterised in that: the conducting particles in described conducting resinl is gold, silver, copper, gold-plated nickel, silver-plated
The mixing of any one or several in nickel or silver-plated copper；Being shaped as of described conducting particles is spherical, sheet
The mixing of any one or several in shape, olive-shaped or needle-like；The particle diameter of conducting particles is
0.01 μm～5 μm.
18. is according to claim 16 without main grid, high efficiency back contact solar cell mould
Block, it is characterised in that: the polymeric adhesive in described conducting resinl is epoxy resin, polyurethane tree
Any one in fat, acrylic resin or organic siliconresin or several mixing, described bonding agent can
With heat cure or photocuring.
19. is according to claim 1 without main grid, high efficiency back contact solar cell module,
It is characterized in that: at the insulating barrier between described P electrode and described N electrode, be provided with thermoplastic resin
Fat or thermosetting resin.
20. is according to claim 19 without main grid, high efficiency back contact solar cell mould
Block, it is characterised in that: described resin is ethylene-vinyl acetate copolymer, vistanex, epoxy
In resin, polyurethane resin, acrylic resin, organic siliconresin any one or appoint several.
21. without main grid, high efficiency back contact solar cell assembly, before from top to bottom connecting
Layer material, encapsulating material, solar cell layer, encapsulating material, backsheet, it is characterised in that:
Described solar cell layer includes several solar modules, and described solar module is power
Profit requires the solar module described in any one of 1-20, and described solar module is by referring to
The bus bar electrode electrical connection that the base portion of shape electrode is arranged.
22. is according to claim 21 without main grid, high efficiency back contact solar cell group
Part, it is characterised in that: the cell piece number of described solar cell layer is 1～120, wherein, including
1～120 battery module, described battery module includes 1～120 cell piece.
23. without main grid, the preparation method of high efficiency back contact solar cell assembly, mainly include with
Lower step:
The first step: prepare battery module, molding finger electrode on electric connection layer；Described electric connection layer
For three-decker, ground floor is conductive material layer, and the second layer is resistance to deformation layer, and the material of third layer is
The material same or like with the coefficient of thermal expansion and contraction of ground floor material, scribes ground floor conductive material
Or punching press is finger electrode, by finger electrode successively with resistance to deformation layer, third layer material layer is gluing covers
Close；A group or more described finger electrode is electrically connected with P electrode or N electrode, by one
Group or the finger electrode of more than a group electrically connect with the electrode of another doping type；Each group described finger-like electricity
Pole becomes interdigitated alternately arranged, the described one-tenth interdigited electrode of arranged adjacent and different shaped doped layer electrode
Electrical connection；Base portion in finger electrode arranges bus bar electrode；
Step 2: prepare solar cell layer, solar module step one prepared is by converging
Stream strip electrode electrical connection, is prepared as solar cell layer；
Step 3: successively by front layer material, encapsulating material, solar cell layer, encapsulating material, the back of the body
The order of layer material carries out stacking, and lamination obtains battery component.
24. is according to claim 23 without main grid, high efficiency back contact solar cell assembly
Preparation method, it is characterised in that: the one side of electric connection layer is pasted one layer of glue, then carry out scribing or
Punching press；And scribe concaveconvex shape on described bus bar electrode.
25. is according to claim 23 without main grid, high efficiency back contact solar cell assembly
Preparation method, it is characterised in that: described in step one, the P electrode on cell piece and N electrode exist
There is on horizontal plane mirror symmetrical structure, when the quantity of cell piece is more than 1, the side of assembled battery sheet
Formula is, after being connected with electric connection layer by first piece of cell piece, is rotated at horizontal plane by second piece of cell piece
180 degree, two panels cell piece justified margin, make the P electrode on second piece of cell piece and first piece of battery
N electrode on sheet, on the finger of a finger electrode, the most normally places the 3rd back contacts electricity
Pond, makes the N electrode of the P electrode on the 3rd piece of cell piece and second piece of cell piece at one article of finger-like electricity
On the finger of pole, repeat aforesaid operations and form cascaded structure, form solar cell layer.
26. is according to claim 23 without main grid, high efficiency back contact solar cell assembly
Preparation method, it is characterised in that: the finger of described finger electrode uses plating process to be coated with low melting point
Material, described low melting material is appointing in scolding tin, leypewter, sn-bi alloy or tin-lead silver alloy
One, heated after make the finger of finger electrode be melted by low melting material with P electrode or N electrode
Change is welded and fixed, and makes the finger of finger electrode electrically connect with cell piece.
27. is according to claim 26 without main grid, high efficiency back contact solar cell assembly
Preparation method, it is characterised in that: heating fixation procedure cell piece front use heating cushion；Described
The heating-up temperature of heating cushion is 40～80 DEG C.
28. is according to claim 27 without main grid, high efficiency back contact solar cell assembly
Preparation method, it is characterised in that: described mode of heating is infra-red radiation, Resistant heating or heat
Wind adds any one hankered, and heating-up temperature is 150～500 DEG C.
29. is according to claim 23 without main grid, high efficiency back contact solar cell assembly
Preparation method, it is characterised in that: the parameter of described lamination is carried out according to the vulcanization characteristics of encapsulating material
Setting, described encapsulating material is EVA, is 145 DEG C of laminated 16 minutes.
30. is according to claim 26 without main grid, high efficiency back contact solar cell assembly
Preparation method, it is characterised in that: the plating process of the finger of electric connection layer finger electrode is hot dipping
Any one in plating, plating or chemical plating.
31. is arbitrary described electric without main grid, high efficiency back contact solar according to claim 23-30
The preparation method of pond assembly, it is characterised in that: plate in the way of cold plating or plating in described finger electrode
There is any one in aluminum, copper, silver；The mode of described cold plating be metal powder is mixed with air after high pressure
Ejection.
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| CN101933157A (en) * | 2008-01-31 | 2010-12-29 | 夏普株式会社 | The manufacture method of solar module |
| CN102356472A (en) * | 2009-01-16 | 2012-02-15 | 夏普株式会社 | Solar cell module and method for manufacturing solar cell module |
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| KR101231303B1 (en) * | 2011-05-25 | 2013-02-07 | 현대중공업 주식회사 | Back contact solar cell module |
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