CN104347440A - Method for establishing material locking connection and power semiconductor module - Google Patents

Method for establishing material locking connection and power semiconductor module Download PDF

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Publication number
CN104347440A
CN104347440A CN201410370324.4A CN201410370324A CN104347440A CN 104347440 A CN104347440 A CN 104347440A CN 201410370324 A CN201410370324 A CN 201410370324A CN 104347440 A CN104347440 A CN 104347440A
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CN
China
Prior art keywords
coalesced object
supersonic generator
coalesced
suo shu
metal layer
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Granted
Application number
CN201410370324.4A
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Chinese (zh)
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CN104347440B (en
Inventor
G·施特罗特曼
T·尼贝尔
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Infineon Technologies AG
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Infineon Technologies AG
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853—Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
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    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10621—Components characterised by their electrical contacts
    • H05K2201/10628—Leaded surface mounted device
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
    • H05K2203/0285—Using ultrasound, e.g. for cleaning, soldering or wet treatment
    • H—ELECTRICITY
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    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/081—Blowing of gas, e.g. for cooling or for providing heat during solder reflowing
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    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • H05K2203/08—Treatments involving gases
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    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/105—Using an electrical field; Special methods of applying an electric potential

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

The invention relates to a method for material locking connection between a first joining target (1) and a second joining target (2). The first first joining target (1), the second joining target (2) and an ultrasonic generator (6) are provided. A welding position is determined on the surface (2t) of the second joining target (2); material locking between the first joining target (1) and the second joining target (2) is achieved in an ultrasonic welding connection way when the first joining target (1) is pressed on the second joining target (2) in the welding position by the ultrasonic generator (6) swining or rotating due to ultrasonic frequency changes; a direction deviation between a normal vector (n) and the gravity (g) is an angle (phi) smaller than 90-degree; and the normal vector extends toward the ultrasonic generator (6) while perpendicular to the surface (2t) in the welding position.

Description

For setting up the method for the sealed connection of material and power semiconductor modular
Technical field
The present invention relates to a kind of for setting up the method for the sealed connection of material (stoffschl ü ssige Verbindung), the method also can be used in setting up power semiconductor modular in addition.
Background technology
Often implement by means of ultrasonic welding method in the connection of two coalesced object such as between circuit carrier and power consumption part in power semiconductor modular.Such method not only has advantage from manufacturing technology aspect but also about electric and mechanical property relative to conventional method.The latter is particularly suitable in reliability under higher operating temperature.
Be in swing at the next coalesced object of the situation implementing to be welded to connect by means of supersonic generator, and another coalesced object keeps static.The relative movement of two coalesced object defines the formation of the fixing connection of machinery in conjunction with thrust, wherein mutually compressed by two coalesced object by thrust.
Friction between two coalesced object and between one of coalesced object and supersonic generator is produced according to method by technique.Depend on that this will produce mechanical particles, these mechanical particles can come from one or two coalesced object and supersonic generator.These particulates can such as be made up of copper, copper alloy, nickel, aluminium, steel, gold, silver etc.Such particulate can have such as dust (diameter <0.01 millimeter) to the size of chip shape (until 5 mm lengths).
But such as in power semiconductor modular or other electronic installations, mechanical particles can cause serious infringement freely.Mechanical particles can directly or subsequently time be engraved in run duration causing trouble (such as cause the short circuit between different current potentials, cause insulation fault or cause partial discharge).Therefore such problem is avoided to be high-importance.
Summary of the invention
Task of the present invention is, provides a kind of sealed method be connected of material for being based upon between the first coalesced object with the second coalesced object, wherein avoid the appearance of described problem or reduce at least significantly described problem occur frequency.
This task is by solving according to method of the present invention.Design of the present invention and improvement are the objects of preferred embodiment.
In order to be based upon, material between the first coalesced object with the second coalesced object is sealed to be connected, and provides the first coalesced object and the second coalesced object and provides supersonic generator.Welding position is determined on the surface of the second coalesced object.By swing back and forth with ultrasonic frequency or the supersonic generator that rotates back and forth the ultrasonic bonding that the first coalesced object is based upon material between the first coalesced object with the second coalesced object sealed in welding position relative to the second coalesced object extruding between the first coalesced object with the second coalesced object is connected, the wherein direction of normal vector and the deviation of directivity of the gravity angle that is less than 90 °, this normal vector extends perpendicular to the direction of surface towards supersonic generator in welding position.
Selectively, also can back-and-forth method vector like this, the angle being less than 45 ° with the deviation of directivity in the direction and gravity that make this normal vector, or this normal vector can completely towards the direction of gravity.
Normal vector---it extends perpendicular to the direction of the surface of the second coalesced object towards supersonic generator on welding position---also has a component towards the direction of gravity, selectively also there is the component in the direction perpendicular to gravity, but not in contrast to the component in the direction of gravity.Machinery or other particulates thus---by this particle contamination first coalesced object and/or the second coalesced object and/or supersonic generator or pollute ultrasonic bonding during manufacture and connect---are fallen from the first coalesced object, the second coalesced object or supersonic generator by Action of Gravity Field.Relative to conventional ultrasound welding method, realize in the present invention just like the ultrasonic bonding of " excessive " (ü ber Kopf) connects.Collaborative effect is, particulate is more easily fallen from coalesced object removing thus by hyperacoustic effect.
Selectively can aspirator be set, be pumped in the particulate set up and fallen by the first coalesced object and/or the second coalesced object and/or supersonic generator during ultrasonic bonding connects with aspirator.Can avoid environmental pollution thus, if realize processing in clean room, so this is particular importance.
Equally selectively can provide fan, blow away the particulate be positioned on the first coalesced object and/or the second coalesced object and/or supersonic generator with fan.
Another kind of selection is, there is provided electric field and to the particulate electrostatic charging be positioned on the first coalesced object and/or the second coalesced object and/or supersonic generator, thus particulate removes from the first coalesced object, the second coalesced object and supersonic generator under electric field action.
Such method also can be used in setting up power semiconductor modular in addition, wherein the first coalesced object is configured to the conducting connecting part of power semiconductor modular, and the second coalesced object is configured to circuit carrier, this circuit carrier has insulating carrier, metal layer is applied on insulating carrier, metal layer forms surface, and welding position is positioned on the surface.Before or after setting up ultrasonic bonding connection, circuit carrier can be equipped with semiconductor chip.
Accompanying drawing explanation
The present invention is illustrated further with reference to accompanying drawing subsequently according to embodiment.Reference numeral identical in the accompanying drawings represents the element with identical function.Wherein:
Fig. 1 shows the example that the metal power consumption part for being based upon power semiconductor modular with the supersonic generator of Linear oscillating is connected with the ultrasonic bonding between circuit carrier;
Fig. 2 shows the example that the metal power consumption part for being based upon power semiconductor modular with the supersonic generator of rotary oscillation is connected with the ultrasonic bonding between circuit carrier;
Fig. 3 shows the device according to Fig. 1, is wherein additionally provided for the aspirator aspirating the particulate fallen;
Fig. 4 shows the device according to Fig. 2, is wherein additionally provided for the voltage source aspirating the aspirator of the particulate fallen and the charging for particulate, and this particulate is positioned on the first coalesced object and/or the second coalesced object and/or supersonic generator;
Fig. 5 shows the device according to Fig. 2, wherein additionally be provided for aspirating the aspirator of the particulate fallen and the voltage source for the fan that blows away particulate or the charging for particulate, this particulate is positioned on the first coalesced object and/or the second coalesced object and/or supersonic generator;
Fig. 6 shows the device according to Fig. 2, charges and it removed from welding position by means of electric field wherein to the particle produced.
Embodiment
Fig. 1 shows the cross section of power semiconductor modular during technology that part completes.Power semiconductor modular has circuit carrier 2, and the connector 1 of conduction should be connected with this circuit carrier by material in locking manner.
Connector 1---it represents the first coalesced object---can such as providing supply power voltage, control signal or measuring-signal to the power semiconductor modular completed from outside, or the supply power voltage produced in power semiconductor modular or the control produced in power semiconductor modular or measuring-signal are provided in the outside of power semiconductor modular.The connector 1 of conduction can be such as punching press or selectively bending sheet material, or the pin be made up of metal.In the example illustrated, connector 1 has bottom section 11 and free end 12, and this free end can by electrical contact when the power semiconductor modular completed.Free end 12 such as can be given prominence to by the housing 30 of power semiconductor modular and can freely be entered thus from power semiconductor modular for this reason.
Circuit carrier 2---it represents the second coalesced object---has dielectric insulating carrier 20 and the upper metal layer 21 applied and selectable lower metal layer 22 thereon, and this lower metal layer is applied on this insulating carrier 20 on the side of going up metal layer 21 dorsad of insulating carrier 20.The power semiconductor modular that completes of part is inverted in FIG, therefore goes up below metal layer 21 is located in FIG, and above lower metal layer 22 is located at.
In order to realize the wiring expected, upper metal layer 21 can be configured to conductor circuit and/or conductor surface 211,212,213 when needed.Selectively, upper metal layer 21 and lower metal layer 22 can by insulating carrier 20 electric insulations mutually.Upper metal layer 21 and/or lower metal layer 22 can independently of each other, indirectly or directly be applied on insulating carrier 20.
Upper metal layer 21 and/or lower metal layer 22 can such as fully or at least 90% weight (percentage by weight) be made up of copper, or completely or at least 90% weight ground be made up of aluminium.Selectively, upper metal layer 21 and/or lower metal layer 22 at least can have one or more thin metal layer, such as to improve weldability or sinterability there on the side of its insulating carrier 20 dorsad.Applicable material for such metal level is such as nickel, silver, gold, palladium.
Insulating carrier 20 can be such as ceramic sheet, such as, be made up of aluminium oxide (AI2O3), aluminium nitride (AIN) or zirconia (ZrO2).Circuit carrier 2 such as can be configured to DCB substrate (direct brazing connects), DAB substrate (direct aluminium welding), AMB substrate (active solder) or IMS substrate (insulated metal substrate).
Upper metal layer 21 and/or lower metal layer 22 can have the thickness in the scope of 0.05 millimeter to 2 millimeters or the scope of 0.25 millimeter to 2.5 millimeters respectively.The thickness of insulating carrier 20 can such as be located in the scope of 0.1 millimeter to 2 millimeters or 0.25 millimeter to 1 millimeter.
In addition provide selectable base plate 3, this baseboard material is such as connected with circuit carrier 2 material is sealed by means of the articulamentum of weld layer or sintering in locking manner.Base plate 3 by such as metal or can be made up of metal matrix composite material.The thickness of base plate can be such as at least 2 millimeters or at least 3 millimeters.Once there is not base plate 3, the lower metal layer 22 of circuit carrier 2 can be freely.
Before or after setting up that the material between circuit carrier 2 with connector 1 is sealed and being connected, circuit carrier selectively can be equipped with one or more semiconductor element 4 and selectively be equipped with other element.The connection of upper metal layer 21, the conductor circuit that may be formed thus and/or conductor surface 211,212,213 and the semiconductor element 4 assembled on circuit carrier 2 or other elements can such as realize by means of bonding wire 5 (Bonddraht).But the alternative or additional also circuit board of flexibility, metallic bus bar (Verschienungen), pressure contact connection or spring contact can conductions for foundation in power semiconductor modular with connecting mutual combination in any in bonding wire 5 connects.
Semiconductor element 4 can be other semiconductor elements any of such as MOSFET, IGBT, junction field effect transistor, thyristor, diode or mutual combination in any.
In order to be based upon now circuit carrier 2 or the direct material between upper metal layer 21 with connector 1 is sealed is connected, extruded relative to welding position with thrust F by supersonic generator 6 by the bottom section 11 of connector 1, this welding position is located on the surface section 2t of circuit carrier 2.The direction in the direction opposite normal vector n of thrust F, this normal vector to refer to from from insulating carrier 20 perpendicular to surperficial 2t and moves towards towards the direction of supersonic generator 6 thus on welding position.
Under the state compressed, connector 1 is contact circuit carrier 2 or welding position also.In the example illustrated, surface section 2t is formed by the side of the insulating carrier dorsad 20 of upper metal layer 21.Welding position is provided by portion's section of surface section 2t thus.
Under impaction state, the power semiconductor modular that part completes abuts on anvil 62, thus the power semiconductor modular that part completes is extruded relative to anvil 62 by the thrust F of supersonic generator 6.In example shown in Figure 1, base plate 3 abuts on anvil 62.If the power semiconductor modular that part completes does not have base plate 3, so the following metal layer 22 of this power semiconductor modular abuts on anvil 62.
Anvil 62 selectively can have fixture or other holding devices, so that the power semiconductor modular that retaining part completes.Equally selectively, anvil 62 can be assemblied in controllable jig arm or on the part of controllable jig arm, thus the power semiconductor modular that part completes can be held by this jig arm and can be in the position expected during welding process subsequently of power semiconductor modular and the orientation of expectation that partly complete.If reach the position of expectation and the orientation of expectation, can stationary machines robot arm, thus the power semiconductor modular that part completes is fixed on the position of expectation and the orientation of expectation.
During bottom section 11 extrudes relative to welding position with thrust F by supersonic generator 6, this supersonic generator swings back and forth with ultrasonic frequency, is connected in a manner known in itself thus by ultrasonic bonding or by the material of ultrasonic wave metal welding generation between connector 1 with circuit carrier 2, in the present example namely between connector 1 with upper metal layer 21 is sealed.This joint method so can be implemented at this, i.e. the first coalesced object (at this namely connector 1) and the second coalesced object (at this namely circuit carrier 2) not welding or fusings.At this, if one of coalesced object, be generally bonding wire, directed in the guiding channel of supersonic generator 6, then use term " ultrasonic bonding ".Otherwise use term " ultrasonic wave metal welding ".
After setting up the sealed connection of material, connector 1 is contact circuit carrier 2 (being upper metal layer 21 in the present example) directly.
In order to realize, the power semiconductor modular that can complete from part downwards and thus falls particulate 7---its during ultrasonic bonding establishment of connection by the first coalesced object 1 and/or the second coalesced object 2 and/or supersonic generator 6 weares and teares and/or its also existence from procedure of processing before---, the orientation---along the power semiconductor modular that this directional at-tachment part completes during welding procedure---selecting to expect like this, is less than 90 ° or be even less than the angle φ of 45 ° to make the direction of normal vector n during welding procedure with the deviation of directivity of gravity g.In the example illustrated, angle φ is zero degree, thus the power semiconductor modular that part completes rotates 180 ° of ground inversions.
In the example shown in fig. 1, supersonic generator 6 swings back and forth along the direction perpendicular to thrust F.In the example shown in figure 2 that other are identical, supersonic generator 6 swings back and forth around the axis being parallel to thrust F rotatably with ultrasonic frequency.
As further in figure 3 schematically shown in, aspirator 8 can be provided, particulate 7 that is that worn and torn by the first coalesced object 1 and/or the second coalesced object 2 and/or supersonic generator 6 during being pumped in ultrasonic bonding connection establishment with this aspirator and/or also existence from procedure of processing before.
Alternative or additional in aspirator 8, can as shown in FIG. 4, angle φ also can be greater than zero degree.Illustrate in addition in the diagram, aspirator 8 also can be located under welding position in side.
As shown in Figure 5, may being of same existence, by means of fan 9 by worn and torn by the first coalesced object 1 and/or the second coalesced object 2 and/or supersonic generator 6 during ultrasonic bonding connection establishment and/or also blown away from the first coalesced object 1, second coalesced object 2 and supersonic generator 6 by the particulate 7 that procedure of processing causes before.Such fan 9 can be used, and do not rely on whether there is aspirator 8.
Schematically illustrate another supporting step in figure 6, remove from bonding station and coalesced object 1,2 for the particulate 7 will produced in engaging process.Charge (plus or minus) to particulate 7 at this, thus particulate leave from bonding station based on electric field or due to the support of electric field.So can realize the charging of particulate 7, namely the first link 81 of direct voltage source 80 is connected electrically to supersonic generator 6 and/or one of is connected in coalesced object 1 and/or 2, and the second link 82 of direct voltage source 80 is connected electrically to electrode 85, such as metallic plate.Electrode 85---it is selectively designed for the collection basin collecting particulate 7---can be located immediately under bonding station, but also can be positioned under bonding station and to stagger in side and this bonding station, or even under bonding station and at side and coalesced object 1,2 adjacent.At the first link 81 place, can provide the first current potential, it is greater than or less than the second current potential, and this second current potential provides at the second link 82 place.Between bonding station and electrode 85, electric field is there is thus during welding process.
Charge to give the particulate 7 produced during welding process, this particulate is by the first coalesced object 1 and/or the second coalesced object 2 and/or supersonic generator 6 weares and teares and/or also existence from procedure of processing before during ultrasonic bonding connection establishment, and supersonic generator 6 can be connected electrically to the first link 81 via connecting line 83.Alternatively or additionally, one and/or two coalesced object 1,2 also can be connected electrically to the first link 81.In the present example, the conductor surface 211 of such as connector 1 or upper metal layer 21 can the first link 81 conduction connect.
If as the element (being semiconductor element 4 in the present example) one of at least comprised relative to electrostatic charging sensitivity in coalesced object 1,2 in the present example, another electrode can be provided with, this electrode at least conducts electricity with supersonic generator 6 and is connected and is so arranged at this, to make bonding station between supersonic generator 6 and another electrode during welding process.Achieved by such setting and between supersonic generator 6 and another electrode, there is no potential difference and do not form the electric field destroying responsive element thus.Because coalesced object 1,2 and supersonic generator charge thus, can notice that it discharges slowly according to the type of coalesced object 1,2, to prevent the destruction to senser, such as, when fastener 1,2 is taken off by anvil 62 and is kept at another location after foundation is welded to connect.Correspondingly also can meaningfully, before foundation is welded to connect, coalesced object 1,2 slowly be charged.Such as only when coalesced object 1 and 2 is extruded by supersonic generator 6 mutually in welding position, can just start slow charging.Can avoid in this way, before supersonic generator 6 being placed on the first coalesced object 1 or when produce arc discharge or offset current between which.
In order to make the first link 61 decoupling zero over the ground, anvil 62 can selectively during welding process relative to the first link 81 electric insulation, or anvil can electrical insulation from earth.
Naturally, not only external electrical bonding conductor can be welded on the upper metal layer 21 of circuit carrier 2 by described mode.Such as by identical mode it is also possible that, the bonding conductor of inside modules such as bonding wire 5 is welded on another conducting element any of power semiconductor modular to be manufactured, such as, is welded to metal layer 21 (being welded to its section 213 in the example illustrated) and/or is welded on the side formed by chip metallization of circuit carrier dorsad 2 of the semiconductor chip 4 be assemblied on circuit carrier 2.
In whole design of the present invention can unrestricted choice be, whether be welded to connect to realize foundation by means of the supersonic generator 6 linearly swung back and forth---as exemplarily as shown in Fig. 1 to 3---or realize, as this is exemplarily as shown in Fig. 2,4,5 and 6 by means of rotating the supersonic generator 6 swung back and forth.Independent of this, ultrasonic frequency---linearly or rotatably swings back and forth with this ultrasonic frequency supersonic generator 6---and can such as be located in the scope of 15kHz to 100kHz during welding process.Such as ultrasonic frequency can be selected in the scope of 15kHz to 40kHz, this such as welds for ultrasonic wave metal is favourable, or select in the scope of 40kHz to 100kHz, such as at thin bonding wire 5, (diameter is less than such as 100 μm for this, in scope such as between 15 μm to 100 μm) welding in or thick bonding wire 5 (diameter is greater than 100 μm or be greater than 300 μm, in scope such as between 100 μm to 600 μm) welding in be favourable, or in the metallization 21 bonding wire being welded to circuit carrier 2 or be favourable when being welded on an electrical fitting---this electrical fitting is fixed on the housing 30 of semiconductor module---.
In addition, the measure (aspirator 8, fan 9, in the electric field derivation charged corpuscle 7) for the whole supports removed from bonding station and coalesced object 1,2 by particulate 7 can be applied to combination in any individually or mutually.

Claims (13)

1., for being based upon the sealed method be connected of material between the first coalesced object (1) with the second coalesced object (2), there are following steps:
First coalesced object (1) and the second coalesced object (2) are provided;
Supersonic generator (6) is provided;
Welding position is determined on the surface (2t) of described second coalesced object (2);
By swing back and forth with ultrasonic frequency or the supersonic generator (6) that rotates back and forth the ultrasonic bonding that described first coalesced object (1) is based upon material between described first coalesced object (1) with described second coalesced object (2) sealed in described welding position relative to described second coalesced object (2) extruding is connected, wherein
The angle (φ) that the direction of normal vector (n) and the deviation of directivity of gravity (g) are less than 90 °, this normal vector extends towards the direction of supersonic generator (6) perpendicular to described surface (2t) in described welding position.
2. method according to claim 1, wherein, the angle (φ) that described normal vector (n) is less than 45 ° with the deviation of directivity of described gravity (g).
3. method according to claim 1 and 2, wherein, described normal vector (n) points to the direction of described gravity (g).
4. according to the method one of the claims Suo Shu, wherein, described first coalesced object (1) is directly abutted on described second coalesced object (2) during being extruded relative to described second coalesced object (2) by described supersonic generator (6).
5. according to the method one of the claims Suo Shu, wherein, described ultrasonic frequency is in the scope of 15kHz to 100kHz.
6. according to the method one of the claims Suo Shu, wherein, described second coalesced object (2) is configured to circuit carrier, this circuit carrier has dielectric insulating carrier (20), metal layer (21) is applied on described insulating carrier, wherein forms described surface (2t) by described metal layer (21).
7. according to the method one of the claims Suo Shu, wherein, described first coalesced object (1) is configured to the connector of conduction.
8. according to the method one of the claims Suo Shu, there is aspirator (8), be pumped in the particulate (7) set up and fallen by described first coalesced object (1) and/or described second coalesced object (2) and/or described supersonic generator (6) during described ultrasonic bonding connects with described aspirator (8).
9. according to the method one of the claims Suo Shu, there is fan (9), blow away the particulate (7) be positioned on described first coalesced object (1) and/or described second coalesced object (2) and/or described supersonic generator (6) with described fan (9).
10. according to the method one of the claims Suo Shu, there is voltage source (80), there is provided voltage by means of described voltage source (80) to described supersonic generator (6), thus the particulate (7) be positioned on described first coalesced object (1) and/or described second coalesced object (2) and/or described supersonic generator (6) is electrostatically charged and leaves from described first coalesced object (1), described second coalesced object (2) and described supersonic generator (6) under electric field action.
11. according to the method one of the claims Suo Shu, wherein, described supersonic generator (6) extrudes described second coalesced object (2) relative to anvil (62) during described first coalesced object (1) extrudes relative to described second coalesced object (2) by described welding position, wherein said anvil (62) is relative to described supersonic generator (6) electric isolution, and/or wherein once described supersonic generator swings with described ultrasonic frequency or rotates, then between described anvil (62) and described supersonic generator (6), electric current is not had to flow through.
12. according to the method one of the claims Suo Shu, wherein, does not have welding or melts described first coalesced object (1) and described second coalesced object (2) during setting up the sealed ultrasonic bonding connection of described material.
13. according to the method one of the claims Suo Shu, wherein,
Described first coalesced object (1) is configured to conducting connecting part;
Described second coalesced object (2) is configured to circuit carrier, this circuit carrier has insulating carrier (20), metal layer (21) is applied on described insulating carrier, wherein forms described surface (2t) by described metal layer (21); And
Second coalesced object (2) is equipped with semiconductor chip (4).
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