CN104347356A - Homogeneous epitaxial growth method on GaN (gallium nitride) substrate - Google Patents
Homogeneous epitaxial growth method on GaN (gallium nitride) substrate Download PDFInfo
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- CN104347356A CN104347356A CN201410455805.5A CN201410455805A CN104347356A CN 104347356 A CN104347356 A CN 104347356A CN 201410455805 A CN201410455805 A CN 201410455805A CN 104347356 A CN104347356 A CN 104347356A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02634—Homoepitaxy
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Abstract
The invention discloses a homogeneous epitaxial growth method on a GaN (gallium nitride) substrate. The homogeneous epitaxial growth on the GaN substrate is realized through the lateral epitaxy of an annular pattern mask. The method has the advantages that a perfect GaN epitaxy layer can be obtained, the dislocation density can be effectively reduced, the dislocation density of the epitaxy layer can reach a value lower than 106/cm<2>, the piezoelectric polarization effect of a GaN-based LED (light emitting diode) can be effectively reduced, the inner quantum compounding efficiency and the outer quantum emitting efficiency can be improved, the integral light outlet efficiency can reach more than 1.5 times of that of an ordinary LED, the heating quantity of a device can be effectively reduced, and the service life of the device can be prolonged.
Description
Technical field
The invention belongs to field of semiconductor photoelectron technique, relate to epitaxial growth and MOCVD (MOCVD) technical field of semiconductor material thin film, particularly relate to one and utilize ring-like pattern mask epitaxial lateral overgrowth to realize the method for isoepitaxial growth on gallium nitride (GaN) substrate.
Background technology
With the nitride semi-conductor material that GaN, InN, AlN and its ternary system and quaternary are representative, it can be with as direct band gap, and bandwidth is continuous variable from 0.7eV to 6.2eV.The physics of its excellence, chemical stability, the characteristics such as high saturated electrons mobility, become the preferred material of the opto-electronic devices such as GaN base laser, light-emitting diode.
Now widely used sapphire (Sapphire) or the lattice mismatch between carborundum (SiC) substrate and gallium nitride (GaN) material and thermal stress mismatch are comparatively large, and hetero structure epitaxy growth causes the Quality Down of GaN material and device thereof.Adopt the structure GaN-based LED of homo-substrate to have following advantage compared to heterostructure: without lattice mismatch and thermal mismatching between substrate and epitaxial loayer, effectively can reduce the defect concentration of device, improve device performance; Because GaN itself can conduct electricity, now electrode can be placed in chip both sides, can realize vertical structure LED; Substrate is identical with epitaxial film materials, is convenient to cleavage, brings convenience to the preparation of GaN base laser diode; Refractive index of substrate is identical with luminescent layer, and the light output efficiency of GaN substrate LED chip is more than 1.5 times of traditional Sapphire Substrate LED; The thermal conductivity of GaN is better, is approximately sapphire 5 times, is conducive to solving heat dissipation problem in large area high power device.
And GaN substrate adopts HVPE technology to obtain mostly at present, because the method exists the epitaxial film warpage caused by heteroepitaxy, as shown in Figure 1, MOCVD epitaxy growth can not be directly used in.This warpage is caused by HVPE heteroepitaxial growth, common way be undertaken grinding by chemico-mechanical polishing (CMP), polishing, as shown in Figure 2, obtain the GaN substrate meeting epitaxial growth conditions.Its surface of substrate that this method obtains is not be made up of single crystal face, but is made up of many high miller index surfaces, as shown in Figure 3.
This and the first generation and second generation semiconductor device substrate used, if Si, GaAs, InP etc. are very not identical, the first generation and second generation semiconductor device are all processed and are obtained in corresponding bulk homoplasmon material substrate, this just causes the lifting not obtaining the huge device performance of expecting at present at the device of HVPE method GaN substrate Epitaxial growth, and is only limitted to the improvement reporting some performance or some index parameter in the literature.Therefore need to propose a kind of new growing technology scheme to overcome these problems, to obtain more perfect epitaxial loayer, this has very important meaning and value to the development of GaN material and device.
Summary of the invention
For the problems referred to above, the object of this invention is to provide a kind of method of isoepitaxial growth in GaN substrate, the method can obtain more perfect GaN epitaxial layer.
The present invention is based in crystal growing process, if growth crystal face is subject to the modulation impact of various non-planaralities, growth mechanism may great changes have taken place, likely obtains more perfect crystal.
Conventional laterally overgrown is exactly based on this principle.But the epitaxial lateral overgrowth of routine is usually used on substrate that crystal face is made up of single crystal face and carries out, and its object is to reduce the dislocation density in epitaxial loayer crystal, therefore usually adopts striped-shaped mask to realize.
The GaN substrate that the present invention uses, all different from the substrate of traditional semi-conducting material in essence, its surface is made up of the crystal face of the different indices of crystallographic plane, the indices of crystallographic plane raise from substrate center gradually to edge, again because this change is circular symmetric, therefore the present invention proposes the method for ring-like pattern mask epitaxial lateral overgrowth.
Object of the present invention is realized by following technical proposals:
A method for isoepitaxial growth in GaN substrate, comprises the following steps:
(1) GaN substrate surface curvature radius is measured;
(2) grinding and polishing is carried out to GaN substrate;
(3) deposit layer of silicon dioxide film or silicon nitride film on above-mentioned substrate;
(4) substrate surface obtained in step (3) forms concentric mask ring;
(5) carry out epitaxial growth with step (4) gained substrate, obtain GaN epitaxial layer.
Further, in step (1), described GaN substrate is by chemical vapour deposition (CVD) (CVD), and metal organic chemical compound vapor deposition (MOCVD), the method that one or more epitaxy methods in hydride gas-phase epitaxy (HVPE) combine obtains.
Further, in step (1), the thickness of described GaN substrate is 100-4000 μm.
Further, in step (1), also comprise and before measuring described GaN substrate being cleaned.
Further, in step (1), calculate instrument by contact or contactless curvature measurement and measure GaN substrate surface curvature radius.
Further, in step (2), by methods such as mechanical-chemistry grinding polishings, grinding and polishing is carried out to GaN substrate, described substrate processing is greater than 8 meters to radius of curvature.
Further, in step (3), by method deposits such as plasma reinforced chemical vapour depositions (PECVD).
Further, in step (3), the thickness of described silica membrane or silicon nitride film is 100-200nm.
Further, in step (4), adopt the photolithography plate with ring-like pattern to form concentric mask ring in the substrate surface that step (3) obtains, have ring-like pattern photolithography plate can according to the situation of substrate warpage and design especially.Substrate curvature is comparatively large, then donut spacing is larger; Substrate curvature is less, then donut spacing is less.
Further, in step (4), in described concentric mask ring, the width of donut is 1-20 μm, and the spacing of donut is at 1-100 μm.
Further, in step (5), epitaxial growth method can be chemical vapour deposition (CVD) (CVD), metal organic chemical compound vapor deposition (MOCVD), hydride gas-phase epitaxy (HVPE), one in molecular beam epitaxy (MBE) homepitaxy growing method, or the combination of above-mentioned several method.
Further, in step (5), epitaxial growth conditions is: with nitrogen, hydrogen or the two ground mixed air for carrier gas, temperature 500 DEG C-1200 DEG C, pressure is at 100-2000Torr.
The method of isoepitaxial growth in GaN substrate provided by the invention, effectively can reduce dislocation density, and this epitaxial loayer dislocation density can reach 10
6/ cm
2below; Effectively can reduce the piezoelectric polarization effect of GaN base LED, quantum combined efficiency and outer quantum emission effciency in increasing, comprehensive light extraction efficiency can reach more than 1.5 times of common LED; Can effectively reduce device caloric value, increase device useful life.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the GaN substrate utilizing HVPE method to obtain in prior art.
Fig. 2 is the schematic diagram in prior art, HVPE method GaN substrate being carried out to chemico-mechanical polishing.
Fig. 3 is the substrate schematic diagram be made up of different index crystal plane obtained in prior art.
Fig. 4 be in the present invention diametrically etc./or non-equidistance to distribute annular mask laterally overgrown ELOG schematic diagram.
Embodiment
Be described further below in conjunction with the homoepitaxy method of accompanying drawing to GaN substrate of the present invention.
Epitaxial growth of the present invention (comprises epitaxial growth during initial acquisition GaN substrate, also comprise the epitaxial growth proceeded after finishing annular mask) method can for chemical vapour deposition (CVD) (CVD), metal organic chemical compound vapor deposition (MOCVD), hydride gas-phase epitaxy (HVPE), one in the semiconductor epitaxial growth methods such as molecular beam epitaxy (MBE), or more the combination of several method.
Width=external diameter (the R of concentric mask ring in the present invention
outward)-internal diameter (R
in), such as, R shown in Fig. 4
2-R
1, between 1-20 μm; The spacing of donut at 1-100 μm, such as, R shown in Fig. 4
3-R
2, the spacing of donut can according to the situation of substrate warpage and change, substrate curvature is comparatively large, then donut spacing is larger; Substrate curvature is less, then donut spacing is less.
Isoepitaxial growth on the Free-standing GaN substrate of embodiment one: c face
Comprise the following steps:
1) obtain GaN substrate with the growth of HVPE method, after cleaning, measure the radius of curvature on its surface, thickness of sample is in the present embodiment 2000 μm, and radius of curvature is 10 meters.
2) comparatively smooth GaN substrate is obtained by chemico-mechanical polishing (CMP), by the earth silicon mask layer of the method deposit thickness 100nm of PECVD.
3) conventional semiconductor lithography process is adopted to form the concentric mask ring of width 1-20 μm; The spacing of donut is at 1-100 μm.
4) through cleaning after, put into MOCVD and grow, its growth course with nitrogen, hydrogen or the gaseous mixture of the two for carrier gas, epitaxial gan layers temperature 900 DEG C-1200 DEG C, pressure is at 100-500Torr.In the present embodiment, the GaN epitaxial layer surface thickness of acquisition is greater than 4 μm.Whether this step GaN epitaxial layer thickness is can the factor decision such as perfect mergings in time by epitaxial loayer.
5) 5 μm of thick GaN epitaxy sheets that MOCVD grows are put into HVPE, utilize the high-speed rapid growth method of HVPE, can reach fast and use Free-standing GaN as the thickness needed for base material, gross thickness is more than 300 μm, the present embodiment is 300 μm, and this epitaxial loayer dislocation density can reach 10
6/ cm
2.The quick growth temperature range of HVPE is at 600-1100 DEG C, and pressure limit is 250-700Torr.
Embodiment two: based on the growth of the light-emitting diode (LED) of embodiment one
Adopt conventional semiconductor lithography process, form the concentric mask ring of width 1 μm, the spacing of donut is 1 μm.After cleaning, put into MOCVD and grow, its growth course is with nitrogen, hydrogen for carrier gas, and epitaxial gan layers temperature 900 DEG C-1200 DEG C, pressure is at 100-500Torr, and growing surface thickness is 5 μm.The 5 μm of thick GaN epitaxy sheets grown by MOCVD are as substrate, continue through method growth light-emitting diode (LED) of MOCVD, owing to experienced by the modulation growth of ring-type mask, the light-emitting diode that light extraction efficiency improves more than 50 percent can be obtained.
Embodiment three: based on the growth of the light-emitting diode (LED) of embodiment one
Adopt conventional semiconductor lithography process, form the concentric mask ring of width 1 μm, the spacing of donut is 100 μm.After cleaning, put into MOCVD and grow, its growth course is with nitrogen, hydrogen for carrier gas, and epitaxial gan layers temperature 900 DEG C-1200 DEG C, pressure is at 100-500Torr, and growing surface thickness is 5 μm.Using GaN epitaxy sheet thick for 5 μm after MOCVD growth as substrate, continue through method growth light-emitting diode (LED) of MOCVD, owing to experienced by the modulation growth of ring-type mask, the light-emitting diode that light extraction efficiency improves more than 50 percent can be obtained.
Embodiment four: based on the growth of the light-emitting diode (LED) of embodiment one
Adopt conventional semiconductor lithography process, form the concentric mask ring of width 20 μm, the spacing of donut is 100 μm.After cleaning, put into MOCVD and grow, its growth course is with nitrogen, hydrogen for carrier gas, and epitaxial gan layers temperature 900 DEG C-1200 DEG C, pressure is at 100-500Torr, and growing surface thickness is 5 μm.Using GaN epitaxy sheet thick for 5 μm after MOCVD growth as substrate, continue through method growth light-emitting diode (LED) of MOCVD, owing to experienced by the modulation growth of ring-type mask, the light-emitting diode that light extraction efficiency improves more than 50 percent can be obtained.
Embodiment five: based on the growth of the light-emitting diode (LED) of embodiment one
Adopt conventional semiconductor lithography process, form the concentric mask ring of width 20 μm, the spacing of donut is 1 μm.After cleaning, put into MOCVD and grow, its growth course is with nitrogen, hydrogen for carrier gas, and epitaxial gan layers temperature 900 DEG C-1200 DEG C, pressure is at 100-500Torr, and growing surface thickness is 5 μm.Using GaN epitaxy sheet thick for 5 μm after MOCVD growth as substrate, continue through method growth light-emitting diode (LED) of MOCVD, owing to experienced by the modulation growth of ring-type mask, the light-emitting diode that light extraction efficiency improves more than 50 percent can be obtained.
Embodiment six: based on the growth of the light-emitting diode (LED) of embodiment one
Adopt conventional semiconductor lithography process, form the concentric mask ring of width 10 μm, the spacing of donut is 30 μm.After cleaning, put into MOCVD and grow, its growth course is with nitrogen, hydrogen for carrier gas, and epitaxial gan layers temperature 900 DEG C-1200 DEG C, pressure is at 100-500Torr, and growing surface thickness is 5 μm.Using GaN epitaxy sheet thick for 5 μm after MOCVD growth as substrate, continue through method growth light-emitting diode (LED) of MOCVD, owing to experienced by the modulation growth of ring-type mask, the light-emitting diode that light extraction efficiency improves more than 50 percent can be obtained.
Embodiment seven: based on the growth of the laser diode (LD) of embodiment one
Using GaN epitaxy sheet thick for 5 μm after MOCVD growth as substrate, continue through method growth laser diode (LD) of MOCVD, owing to experienced by the modulation growth of ring-type mask, the laser diode improving more than 50 percent useful life can be obtained.
Embodiment eight: based on the diauxic growth of the HVPE of embodiment one
Using the homoepitaxy sheet that obtains based on embodiment one as substrate, again put into hvpe reactor room, utilize the high growth rates of HVPE, growth reaches the GaN thickness of body material yardstick fast, and gross thickness is at more than 1mm.The present embodiment is 1.5mm.The quick growth temperature range of HVPE is at 600-1100 DEG C, and pressure limit is 250-700Torr.
Isoepitaxial growth on the Free-standing GaN substrate of embodiment nine: c face
Comprise the following steps:
1) obtain GaN substrate with CVD method growth, after cleaning, measure the radius of curvature on its surface, thickness of sample is in the present embodiment 4000 μm, and radius of curvature is 10 meters.
2) comparatively smooth GaN substrate is obtained by chemico-mechanical polishing (CMP), by the earth silicon mask layer of the method deposit thickness 150nm of PECVD.
3) conventional semiconductor lithography process is adopted to form the concentric mask ring of width 1-20 μm; The spacing of donut is at 1-100 μm.
4) through cleaning after, put into MOCVD and grow, obtain GaN epitaxial layer, its growth course with nitrogen, hydrogen or the gaseous mixture of the two for carrier gas, epitaxial gan layers temperature 900 DEG C-1200 DEG C, pressure is at 100-500Torr.
Isoepitaxial growth on the Free-standing GaN substrate of embodiment ten: c face
Comprise the following steps:
1) obtain GaN substrate with the growth of MOCVD method, after cleaning, measure the radius of curvature on its surface, thickness of sample is in the present embodiment 100 μm, and radius of curvature is 10 meters.
2) comparatively smooth GaN substrate is obtained by chemico-mechanical polishing (CMP), by the silicon nitride mask layer of the method deposit thickness 200nm of PECVD.
3) conventional semiconductor lithography process is adopted to form the concentric mask ring of width 1-20 μm; The spacing of donut is at 1-100 μm.
4) through cleaning after, put into MOCVD and grow, obtain GaN epitaxial layer, its growth course with nitrogen, hydrogen or the gaseous mixture of the two for carrier gas, epitaxial gan layers temperature 900 DEG C-1200 DEG C, pressure is at 100-500Torr.
Above execution mode, only for illustration of this explanation, is not intended to limit the present invention.Those skilled in the art; without departing from the spirit and scope of the present invention; can make various modification and variation to the present invention, therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be looked Claims scope and be limited.
Claims (10)
1. a method for isoepitaxial growth in GaN substrate, comprises the following steps:
(1) GaN substrate surface curvature radius is measured;
(2) grinding and polishing is carried out to GaN substrate;
(3) deposit layer of silicon dioxide film or silicon nitride film on above-mentioned substrate;
(4) substrate surface obtained in step (3) forms concentric mask ring;
(5) carry out epitaxial growth with step (4) gained substrate, obtain GaN epitaxial layer.
2. the method for isoepitaxial growth in GaN substrate as claimed in claim 1, it is characterized in that, the surface of described GaN substrate is made up of the crystal face of the different indices of crystallographic plane, and the indices of crystallographic plane raise from substrate center gradually to edge, and this change is circular symmetric.
3. the method for isoepitaxial growth in GaN substrate as claimed in claim 1, it is characterized in that, in step (1), described GaN substrate passes through chemical vapour deposition (CVD), metal organic chemical compound vapor deposition, the method that one or more epitaxy methods in hydride gas-phase epitaxy combine obtains; The thickness of described GaN substrate is 100-4000 μm.
4. the method for isoepitaxial growth in GaN substrate as claimed in claim 1, is characterized in that, in step (1), also comprise and cleaning described GaN substrate before measuring.
5. the method for isoepitaxial growth in GaN substrate as claimed in claim 1, is characterized in that, in step (2), carry out grinding and polishing by mechanical-chemistry grinding finishing method to GaN substrate, described substrate processing is greater than 8 meters to radius of curvature.
6. the method for isoepitaxial growth in GaN substrate as claimed in claim 1, it is characterized in that, in step (3), described deposition process comprises plasma reinforced chemical vapour deposition method; The thickness of described silica membrane or silicon nitride film is 100-200nm.
7. the method for isoepitaxial growth in GaN substrate as claimed in claim 1, is characterized in that, in step (1), calculates instrument measure GaN substrate surface curvature radius by contact or contactless curvature measurement; In step (4), the photolithography plate with ring-like pattern is adopted to form concentric mask ring in the substrate surface that step (3) obtains.
8. the method for isoepitaxial growth in GaN substrate as claimed in claim 1, it is characterized in that, in step (4), in described concentric mask ring, the width of donut is 1-20 μm, and the spacing of donut is at 1-100 μm.
9. the method for isoepitaxial growth in GaN substrate as claimed in claim 1, it is characterized in that, in step (5), epitaxial growth method is chemical vapour deposition (CVD), metal organic chemical compound vapor deposition, hydride gas-phase epitaxy, the one in molecular beam epitaxial method, or the combination of above-mentioned several method.
10. the method for isoepitaxial growth in GaN substrate as claimed in claim 1, it is characterized in that, in step (5), epitaxial growth conditions is: with nitrogen, hydrogen or the mixed air of the two for carrier gas, temperature 500 DEG C-1200 DEG C, pressure is at 100-2000Torr.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538969A (en) * | 2018-03-01 | 2018-09-14 | 马鞍山杰生半导体有限公司 | A kind of removing method of aln layer crackle and application |
| JP2020521143A (en) * | 2017-05-24 | 2020-07-16 | サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィクＣｅｎｔｒｅ Ｎａｔｉｏｎａｌ Ｄｅ Ｌａ Ｒｅｃｈｅｒｃｈｅ Ｓｃｉｅｎｔｉｆｉｑｕｅ | Method for measuring curvature of reflective surface and related optical device |
| CN115074824A (en) * | 2021-11-19 | 2022-09-20 | 北京大学 | Method for preparing gallium nitride single crystal substrate by using edge metal mask technology |
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| JPH10287496A (en) * | 1997-04-09 | 1998-10-27 | Matsushita Electron Corp | Production of gallium nitride crystal |
| US20100025727A1 (en) * | 2008-08-04 | 2010-02-04 | Benjamin Allen Haskell | Enhanced spontaneous separation method for production of free-standing nitride thin films, substrates, and heterostructures |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020521143A (en) * | 2017-05-24 | 2020-07-16 | サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィクＣｅｎｔｒｅ Ｎａｔｉｏｎａｌ Ｄｅ Ｌａ Ｒｅｃｈｅｒｃｈｅ Ｓｃｉｅｎｔｉｆｉｑｕｅ | Method for measuring curvature of reflective surface and related optical device |
| JP7169994B2 (en) | 2017-05-24 | 2022-11-11 | サントル ナシオナル ドゥ ラ ルシェルシェ シアンティフィク | Method and related optical device for measuring curvature of reflective surfaces |
| CN108538969A (en) * | 2018-03-01 | 2018-09-14 | 马鞍山杰生半导体有限公司 | A kind of removing method of aln layer crackle and application |
| CN115074824A (en) * | 2021-11-19 | 2022-09-20 | 北京大学 | Method for preparing gallium nitride single crystal substrate by using edge metal mask technology |
| CN115074824B (en) * | 2021-11-19 | 2023-04-28 | 北京大学 | Method for preparing gallium nitride monocrystal substrate by utilizing edge metal mask technology |
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| CN104347356B (en) | 2017-05-17 |
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