CN104335380A - Light emitting device, display unit including the same, and electronic apparatus - Google Patents
Light emitting device, display unit including the same, and electronic apparatus Download PDFInfo
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- CN104335380A CN104335380A CN201380026234.7A CN201380026234A CN104335380A CN 104335380 A CN104335380 A CN 104335380A CN 201380026234 A CN201380026234 A CN 201380026234A CN 104335380 A CN104335380 A CN 104335380A
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- zinc oxide
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
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Abstract
A light emitting device includes: a first electrode (21); an organic layer (23) including a light emission layer; a resistance layer (50) including zinc oxide; and a second electrode (22), the first electrode, the organic layer, the resistance layer and the second electrode being provided in this order, in which a crystal orientation of the zinc oxide includes a plurality of plane index components.
Description
Technical field
This technology relates to luminescent device, comprises display part and the electronic equipment of described luminescent device, and described luminescent device has the resistive layer together with organic layer between two electrodes.
Background technology
Carry out the device of high brightness luminescent as low-voltage direct-current can be utilized to drive, organic electroluminescent (EL:Electroluminescence) device is applied to display part.Such organic EL device can have the first electrode such as set gradually, the organic layer comprising luminescent layer and the second electrode.In order to control the light sent of this organic EL device, being proposed and having introduced resonator structure (such as, PTL 1).
When the thickness of each layer forming described organic layer is optimised by described resonator structure, colour purity and the luminous efficiency of glow color have all been enhanced.But, when the thickness of described organic layer is reduced, may be short-circuited between described first electrode and described second electrode.In order to prevent such short circuit, in PTL 2 to PTL 6, disclose the method inserted in organic EL device and there is high-resistance film.
Citing document list
Patent documentation
[PTL 1]WO01/39554
[PTL 2] Japanese Unexamined Patent Application discloses No. 2001-035667
[PTL 3] Japanese Unexamined Patent Application discloses No. 2006-338916
[PTL 4] Japanese Unexamined Patent Application discloses No. 2005-209647
[PTL 5] Japanese Unexamined Patent Application discloses No. 2011-103205
[PTL 6] Japanese Unexamined Patent Application discloses No. 2011-040244
Summary of the invention
But, even if utilize preceding method, also fail the bad device preventing from fully occurring because of short circuit.Therefore, at present it is desirable that, prevent the short circuit between the first electrode and the second electrode more reliably.
The present invention expects to provide to prevent the luminescent device of the short circuit between the first electrode and the second electrode, the display part comprising this luminescent device and electronic equipment more reliably.
The embodiment of this technology provides a kind of luminescent device, and it comprises: the first electrode; Comprise the organic layer of luminescent layer; Comprise the resistive layer of zinc oxide; And second electrode, described first electrode, described organic layer, described resistive layer and described second electrode are set up in this order.In the light emitting device, the crystal orientation of described zinc oxide comprises multiple indices of crystallographic plane component.
The embodiment of this technology provides a kind of display part, and it is provided with multiple luminescent device, and each described luminescent device comprises: the first electrode; Comprise the organic layer of luminescent layer; Comprise the resistive layer of zinc oxide; And second electrode, described first electrode, described organic layer, described resistive layer and described second electrode are set up in this order.In the light emitting device, the crystal orientation of described zinc oxide comprises multiple indices of crystallographic plane component.
The embodiment of this technology provides a kind of electronic equipment, and it is provided with display part, and described display part is provided with multiple luminescent device, and each described luminescent device comprises: the first electrode; Comprise the organic layer of luminescent layer; Comprise the resistive layer of zinc oxide; And second electrode, described first electrode, described organic layer, described resistive layer and described second electrode are set up in this order.In the light emitting device, the crystal orientation of described zinc oxide comprises multiple indices of crystallographic plane component.
In the luminescent device of this technical em-bodiments, even if create due to the attachment etc. of such as foreign matter the region not being formed with organic layer between described first electrode and described second electrode, but the described resistive layer containing zinc oxide is inserted between these two electrodes.Because the crystal orientation of zinc oxide comprises multiple indices of crystallographic plane component, so membrane stress has been reduced, and zinc oxide can be allowed to be contained in described resistive layer.Compared with other high-resistance material, zinc oxide has the optical characteristics of the optical characteristics close to described organic layer.
According to the luminescent device of each embodiment of this technology, display part and electronic equipment, the described resistive layer containing zinc oxide is arranged between described organic layer and described second electrode.Therefore, it is possible to prevent the short circuit between described first electrode and described second electrode more reliably.And, also make it possible to improve light extraction efficiency.
Should be understood that, aforesaid general remark and detailed description are below all exemplary, and aim to provide further illustrating the claimed technology of the present invention.
Accompanying drawing explanation
Fig. 1 be a diagram that the sectional view of the structure of the display part of this technical em-bodiments.
Fig. 2 be a diagram that the figure of the unitary construction of the display part shown in Fig. 1.
Fig. 3 be a diagram that the figure of the example of the pixel-driving circuit shown in Fig. 2.
Fig. 4 A is the sectional view of the structure for the organic layer shown in key-drawing 1.
Fig. 4 B be a diagram that the sectional view of another example of the organic layer shown in Fig. 4 A.
Fig. 5 be a diagram that the plane graph of the structure of the Semitransmissive reflectance coating shown in Fig. 1.
Fig. 6 A be a diagram that the sectional view of the manufacture method of the display part shown in Fig. 1.
Fig. 6 B be a diagram that the sectional view of the step of following after the step of Fig. 6 A.
Fig. 6 C be a diagram that the sectional view of the step of following after the step of Fig. 6 B.
Fig. 7 A be a diagram that the sectional view of the step of following after the step of Fig. 6 C.
Fig. 7 B be a diagram that the sectional view of the step of following after the step of Fig. 7 A.
Fig. 8 A be a diagram that the sectional view of the step of following after the step of Fig. 7 B.
Fig. 8 B be a diagram that the sectional view of the step of following after the step of Fig. 8 A.
Fig. 9 is for explaining that foreign matter is present in the sectional view of the situation on the first electrode shown in Fig. 1.
Figure 10 be a diagram that the figure of the result of the X-ray analysis of the resistive layer shown in Fig. 1.
Figure 11 be a diagram that the figure of the relation between the ratio of (101) component in the crystal orientation of zinc oxide and stress intensity.
Figure 12 be a diagram that the sectional view of the structure of the display part of variation 1.
Figure 13 be a diagram that the sectional view of the structure of the display part of variation 2.
Figure 14 be a diagram that the sectional view of the structure of the display part of variation 3.
Figure 15 be a diagram that the plane graph of the structure of the extraction electrode shown in Figure 14.
Figure 16 be a diagram that the sectional view of another example of the extraction electrode shown in Figure 14.
Figure 17 be a diagram that the plane graph of the schematic configuration of the module comprising the display part shown in Fig. 1 etc.
Figure 18 be a diagram that the stereogram of the outward appearance of application examples 1.
Figure 19 A be a diagram that the stereogram from the viewed outward appearance in the front of application examples 2.
Figure 19 B be a diagram that the stereogram from the viewed outward appearance in the back side of application examples 2.
Figure 20 be a diagram that the stereogram of the outward appearance of application examples 3.
Figure 21 be a diagram that the stereogram of the outward appearance of application examples 4.
Figure 22 A be a diagram that the figure of the application examples 5 be under closure state.
Figure 22 B be a diagram that the figure of the application examples 5 be under open mode.
Figure 23 be a diagram that the stereogram of the outward appearance of application examples 6.
Embodiment
Below, the preferred embodiment of this technology is explained with reference to the accompanying drawings.To be described according to following order.
1. embodiment (display part: resistive layer comprises the example of zinc oxide)
2. variation 1 (comprising the example of conductive resin layer between resistive layer and the second electrode)
3. variation 2 (comprising the example of auxiliary electrode)
4. variation 3 (comprising the example of extraction electrode)
Embodiment
The unitary construction of display part 1
Fig. 1 illustrates the cross-sectional configuration of the major part of the display part (display part 1) of this technical em-bodiments.Display part 1 is the emissive type display part comprising multiple organic EL device 20, and has and be successively set on pixel-driving circuit on supporting substrate 11 and form layer L1, comprise the luminescent device of organic EL device 20 and form layer L2 and subtend substrate 33.Display part 1 so-calledly ejects emitting display part, and it is in subtend substrate 33 side that its light extracts direction.Pixel-driving circuit forms layer L1 and can comprise such as showing signal-line driving circuit and the scan line drive circuit (not shown) of image.About the details of all parts, explanation will be provided after a while.
Fig. 2 illustrates the unitary construction of display part 1.Display part 1 has the viewing area 110 on supporting substrate 11, and can be used as the such as colored display part of ultrathin organic light emission etc.Around viewing area 110 on supporting substrate 11, such as, can be provided with signal-line driving circuit 120 and scan line drive circuit 130, be the driver for showing image both them.In viewing area 110, being formed with the state of matrix is multiple organic EL devices 20 (20R, 20G and 20B) of arranging of two-dimentional shape and for driving the pixel-driving circuit 140 of organic EL device 20.Organic EL device 20R, 20G and 20B refer to the organic EL device 20 sending ruddiness, green glow and blue light respectively.
Fig. 3 illustrates the example of pixel-driving circuit 140.Pixel-driving circuit 140 is active type drive circuits, and it is formed in the layer of the first electrode 21 (Fig. 1) below mentioned below.That is, pixel-driving circuit 140 has: driving transistors Tr1; Write transistor Tr2; Be in capacitor (holding capacitor) Cs between transistor Tr1 and Tr2; And organic EL device 20R, 20G or 20B of being connected in series between the first power line (Vcc) and second source line (GND) to driving transistors Tr1.Driving transistors Tr1 and write transistor Tr2 each are made up of general thin-film transistor (TFT:Thin Film Transistor).
In pixel-driving circuit 140, multiple holding wire 120A is arranged in a column direction, and multiple scan line 130A is arranged in the row direction.One in organic EL device 20R, 20G and 20B is set at each infall of each holding wire 120A and each scan line 130A.Each holding wire 120A is connected with signal-line driving circuit 120, and each scan line 130A is connected with scan line drive circuit 130.Source electrode from from signal-line driving circuit 120 to transistor Tr2 provides picture signal according to priority, and provides sweep signal according to priority from scan line drive circuit 130 to the gate electrode of transistor Tr2.
The structure of the major part of display part 1
Then, by the explanation providing supporting substrate 11 referring again to Fig. 1, pixel-driving circuit forms layer L1, luminescent device forms the detailed configuration of layer L2, subtend substrate 33 etc.
Supporting substrate 11 can be formed with such as quartz, glass, silicon (Si) wafer, metal forming or the film be formed from a resin or sheet.As aforesaid glass, such as, can use high strain-point glass, soda-lime glass (Na
2o, CaO and SiO
2), borosilicate glass (Na
2o, B
2o
3and SiO
2), forsterite (2MgO and SiO
2), lead glass (Na
2o, PbO and SiO
2) or analog.As resin material, such as, can use polymethyl methacrylate (PMMA), PETG (PET), PEN (PEN), PBN (PBN), polyvinyl alcohol (PVA), polyvinyl phenol (PVP), polyether sulfone (PES), polyimides, polycarbonate resin or analog.When supporting substrate 11 be utilize described resin material and be formed, supporting substrate 11 preferably can have stepped construction and stand surface treatment to suppress water penetration and gas permeability.Because be only extracted from subtend substrate 33 in emitting display part, so supporting substrate 11 can be formed by transmission material or non-transmittive material ejecting.Supporting substrate 11 can be made up of flexible material, thus realizes flexible display part.The Young's modulus of supporting substrate 11 and the value of radius of curvature unrestricted.
Pixel-driving circuit forms layer L1 and has interlayer insulating film 16A and 16B, is embedded with TFT 10T (the driving transistors Tr1 in Fig. 3 and write transistor Tr2) and distribution 17 in interlayer insulating film 16A and 16B.
TFT 10T comprises gate electrode 12, gate insulating film 13 and semiconductor layer, and this semiconductor layer has regions and source/drain 14A and 14B and channel region 15.The channel region 15 of this semiconductor layer is arranged in the position relative with gate electrode 12.Gate insulating film 13 is sandwiched between this semiconductor layer and gate electrode 12.In this semiconductor layer, regions and source/drain 14A and regions and source/drain 14B is configured to allow channel region 15 be in them between the two.TFT 10T is electrically connected to organic EL device 20 by distribution 17.About this semiconductor layer, such as, can use a-Si (amorphous silicon), oxide semiconductor, organic semiconductor or analog.In FIG, illustrate wherein gate electrode 12 and be arranged at so-called bottom-gate-type transistor on substrate 11.But TFT 10T can be top gate-type transistors.
Interlayer insulating film 16A and 16B makes the surface planarisation being formed with pixel-driving circuit 140 (such as TFT 10T) above of supporting substrate 11.Interlayer insulating film 16A and 16B can preferably be made up of the material with good pattern fidelity, this is because be provided with tiny connecting hole in this material.The regions and source/drain 14A of TFT 10T and 14B and organic EL device 20 (the first electrode 21 mentioned below) are electrically connected by distribution 17.Distribution 17 is connected to regions and source/drain 14A and the 14B of TFT10T by the contact site be arranged in (supporting substrate 11 side) the interlayer insulating film 16A in lower floor, and is connected to the first electrode 21 by the contact site in the connecting hole that is arranged at (subtend substrate 33 side) the interlayer insulating film 16B in upper strata.The example of the constituent material of interlayer insulating film 16A and 16B can comprise: the organic materials such as such as polyimides; And such as silicon dioxide (SiO
2), silicon nitride (SiN
x) and the inorganic material such as silicon oxynitride (SiON).
Organic EL device 20, insulating barrier (dividing wall) 24, protective layer 31 and adhesive linkage 32 are arranged at luminescent device and are formed in layer L2.Protective layer 31 and adhesive linkage 32 cover organic EL device 20 and insulating barrier 24.In organic EL device 20, as the first electrode 21 of anode, organic layer 23, Semitransmissive reflectance coating 40, resistive layer 50 and as negative electrode the second electrode 22 in this order from supporting substrate 11 side tegillum stacked.
First electrode 21 hole is injected into the electrode in organic layer 23 (the hole transport layer 23B mentioned in Fig. 4 A) below, and correspond to each organic EL device 20 (20R, 20G and 20B) and be arranged on interlayer insulating film 16B.First electrode 21 also has the function as reflector, and can preferably have reflectivity high as far as possible to improve luminous efficiency.Such as, the first electrode 21 can be made up of llowing group of materials: the metallic elements such as such as platinum (Pt), gold (Au), silver (Ag), chromium (Cr), tungsten (W), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co), tantalum (Ta), aluminium (Al), neodymium (Nd) and molybdenum (Mo); Or their alloy.Such as, as such alloy, can use: there is silver as main component and comprise the Ag-Pd-Cu alloy of the palladium (Pd) of 0.3wt% to 1wt% and the copper of 0.3wt% to 1wt%; Or Al-Nd alloy.By arranging suitable hole injection layer, just make it possible to use following material such as such as aluminium element and aluminium alloy etc. as the first electrode 21: although this material has high reflectivity, there is the hole of causing because of the existence of surface oxide film and inject the shortcoming of obstacle and there is little work function.The nesa coating be made up of indium tin oxide (ITO) and indium-zinc oxide (IZO) can be arranged on the surface of the first electrode 21.The thickness of the first electrode 21 can be such as from 0.01 micron to 1 micron and containing in the scope of two-end-point.
Insulating barrier 24 guarantees the insulation between the first electrode 21 and the second electrode 22, and obtains the desired shape of light-emitting zone.Opening 25 is configured to corresponding with light-emitting zone.Organic layer 23 is arranged in opening 25.Insulating barrier 24 can be such as taper.Along with the position of opening 25 is from the first electrode 21 side to the second electrode 22 side, this opening 25 broadens gradually.Insulating barrier 24 can by such as inorganic insulating material (such as SiO
2) or organic insulating material (such as photosensitive material) make.This inorganic insulating material and this organic insulating material can be stacked.In the part except opening 25, (on insulating barrier 24) can be provided with organic layer 23.But, only there is luminescence in the opening 25.
Such as, as shown in Figure 4 A, organic layer 23 can be configured by stacking gradually hole transport layer 23B, luminescent layer 23A and electron transport layer 23C from the first electrode 21 side.Hole injection layer (not shown) can be arranged between the first electrode 21 and hole transport layer 23B, and electron injecting layer (not shown) can be arranged between electron transport layer 23C and the second electrode 22.The layer except luminescent layer 23A among abovementioned layers can just be set up where necessary.Organic layer 23 can such as correspond to each organic EL device 20R, 20G and 20B and be set up (Fig. 1).Organic layer 23 can be configured to be shared by organic EL device 20R, 20G and 20B, and such as, can ejecting white light (not shown).It is also possible that the stepped construction of hole transport layer 23B, luminescent layer 23A and electron transport layer 23C is regarded as a tandem unit (tandem unit), and stacked plural series unit in each organic EL device 20R, 20G and 20B middle level.
The hole generated in first electrode 21 is transported to luminescent layer 23A by hole transport layer 23B effectively.Its thickness can be such as (comprise two-end-point) from 10nm to 200nm.About hole transport layer 23B, such as 4,4' can be used, 4 "-three (3-methylphenylphenyl amino) triphenylamine (m-MTDATA) or Alpha-Naphthyl phenylenediamine (α NPD).The hole transport layer 23B of organic EL device 20R, 20G and 20B can be made up of such as same material.
In luminescent layer 23A, when electric field is applied in, generates electron-hole compound, and therefore generate light.Such as, the luminescent layer 23A of organic EL device 20R sends ruddiness, and the luminescent layer 23A of organic EL device 20G sends green glow, and the luminescent layer 23A of organic EL device 20B sends blue light.The thickness of luminescent layer 23A can be such as (comprise two-end-point) from 1nm to 100nm.
The luminescent layer 23A of organic EL device 20R can have the thickness of such as approximately 5nm, and can by passing through 4,4-two (2,2-diphenylethyllene) in biphenyl (DPVBi) mixing 30wt% 2, two < (4'-methoxy diphenylamine) styryl >-1, the 5-dicyano naphthalene (BSN) of 6-and the compound composition that obtains.
The luminescent layer 23A of organic EL device 20G can have the thickness of such as approximately 10nm, and the compound that can be obtained by the coumarin 6 by mixing 5wt% in DPVBi forms.
The luminescent layer 23A of organic EL device 20B can have the thickness of such as approximately 30nm, and can by passing through to mix 4 of 2.5wt% in DPVBi, two <2-{4-(N, the N-diphenylamines) phenyl of 4'-} vinyl > biphenyl (DPAVBi) and the compound composition that obtains.
Electron transport layer 23C improves electron transport to the efficiency of luminescent layer 23A.Electron transport layer 23C can be made up of such as quinoline (quinolone), perylene, phenanthroline, phenanthrene, pyrene, double styrene, pyrazine, triazole, oxazole, fullerene, oxadiazole, Fluorenone, anthracene, naphthalene, butadiene, cumarin, acridine, Stilbene and their derivative or metal complex.The thickness of electron transport layer 23C can be such as (comprise two-end-point) from 5nm to 300nm.About electron transport layer 23C, the oxine aluminium (abbreviation: Alq such as with about 20nm thickness can be used
3).Each electron transport layer 23C of organic EL device 20R, 20G and 20B can be made up of such as same material.
Semitransmissive reflectance coating 40 forms the resonator structure of organic EL device 20, and can be configured to such as be shared by all organic EL devices 20.More specifically, the light carrying out light emitting layer 23A resonates between the interface P1 (the first interface) be between the first electrode 21 and organic layer 23 (the hole transport layer 23B in Fig. 4 A) and the interface P2 (second contact surface) be between Semitransmissive reflectance coating 40 and organic layer 23 (the electron transport layer 23C in Fig. 4 A), and a part for this light is extracted from the second electrode 22 through Semitransmissive reflectance coating 40.Because organic EL device 20 has such resonant structure, so the light launched in luminescent layer 23A produces multi interference, and the half-band width of the spectrum of the light extracted from the second electrode 22 side has been reduced.That is, the light radiation intensity on frontal can be allowed to increase, and luminous colour purity can be allowed to improve.And the exterior light entered from subtend substrate 33 side is attenuated because of multi interference, and therefore, its reflection has been reduced.It should be noted that display part 1 can be configured to arrange Semitransmissive reflectance coating 40.
When the light path of the maximum luminous position from interface P1 to luminescent layer 23A is OL
1, and from interface P2 to the light path of maximum luminous position be OL
2time, OL
1and OL
2the mathematic(al) representation 1 such as and mathematic(al) representation 2 below can be met.Maximum luminous position (maximum luminous position M1) can be the interface (Fig. 4 A) such as between electron transport layer 23C and luminescent layer 23A.Maximum luminous position (maximum luminous position M2) can be the interface between hole transport layer 23B as shown in Figure 4 B and luminescent layer 23A.Such as, for organic EL device 20R, maximum luminous position is M1, and for organic EL device 20G and 20B, maximum luminous position is M2.
[mathematic(al) representation 1]
0.7{-F
l/(2C)+1
l}＜＝2×OL
1/R＜＝1.2{-F
l/(2C)+m
1}
[mathematic(al) representation 2]
0.7{-F
2/(2C)+m
2}＜＝2×OL
2/R＜＝1.2{-F
2/(2C)+m
2}
(in mathematic(al) representation 1 and mathematic(al) representation 2, OL
1represent the light path of the maximum luminous position from interface P1 to luminescent layer 23A; OL
2represent from interface P2 to the light path of maximum luminous position; R represents the peak-peak wavelength of the spectrum of the light generated in luminescent layer 23A; F1 represents the phase-shift phase (unit: radian, and-2P<F of the reverberation generated in the P1 of interface
1≤ 0); F2 represents the phase-shift phase (unit: radian, and-2P<F of the reverberation generated in the P2 of interface
2≤ 0); C represents circumference ratio; And (m
1, m
2) value be any one in (0,0), (1,0) and (0,1)).
Utilize organic layer 23, first electrode 21 of organic EL device 20 as above and Semitransmissive reflectance coating 40 by regulation and the interference condition of light that forms or resonance condition, allow brightness and colourity to reduce for the dependence at visual angle.
Semitransmissive reflectance coating 40 can contain such as alkali metal and silver, or alkaline-earth metal and silver.Particularly, Semitransmissive reflectance coating 40 containing magnesium (Mg) and silver, and their volume ratio (Mg:Ag) can be such as from 5:1 to 30:1 (Mg:Ag=5:1 to 30:1) scope in.Semitransmissive reflectance coating 40 can contain such as magnesium and calcium (Ca), and their volume ratio (Mg:Ca) can be such as from 2:1 to 10:1 (Mg:Ca=2:1 to 10:1) scope in.Semitransmissive reflectance coating 40 can be made from aluminum or silver.The thickness of Semitransmissive reflectance coating 40 can be such as from about 1nm to about 6nm (comprising two-end-point).
Semitransmissive reflectance coating 40 has fracture portion 40A.The Semitransmissive reflectance coating 40 with film thickness as above (thickness such as (comprising two-end-point) from 1nm to 6nm) is unlikely formed on the sidewall of insulating barrier 24, and such as can be provided with fracture portion 40A on the sidewall of insulating barrier 24.Therefore, as shown in Figure 5, fracture portion 40A is present in opening 25 around.
Resistive layer 50 is arranged between organic layer 23 and the second electrode 22, particularly, the whole surface of the viewing area 110 on supporting substrate 11 is between Semitransmissive reflectance coating 40 and the second electrode 22, and the resistance of resistive layer 50 is higher than the resistance of the first electrode 21 and the second electrode 22.In this embodiment, resistive layer 50 is containing zinc oxide (ZnO), and the crystal orientation of zinc oxide comprises multiple indices of crystallographic plane component.Thus, although just details can be described after a while, should make it possible to prevent the short circuit of the first electrode 21 between the second electrode 22 more reliably, and should make it possible to improve light extraction efficiency.Resistive layer 50 comprises charge transport function or charge injection function.Resistive layer 50 can be arranged in any position, as long as this position is between organic layer 23 and the second electrode 22.Such as, when display part 1 is configured to not be provided with Semitransmissive reflectance coating 40, resistive layer 50 can be arranged between electron transport layer 23C and the second electrode 22.And when eliminating electron transport layer 23C, resistive layer 50 can be arranged between luminescent layer 23A and the second electrode 22.
Preferably, the electric current flowing through resistive layer 50 can be 1/10th or about 1/10th of the electric current flowing through a whole organic EL device 20.The resistivity of resistive layer 50 can be such as from 1 × 10
2ohm meter is to 1 × 10
6ohm meter and containing two-end-point scope in (from 1 × 10
4ohm meter is to 1 × 10
8ohm meter and containing two-end-point scope in).The thickness of resistive layer 50 can be such as from 0.1 micron to 10 microns and containing in the scope of two-end-point.More specifically, the resistivity of resistive layer 50 can preferably from 5 × 10
2ohm meter is to 5 × 10
4ohm meter and containing two-end-point scope in (from 5 × 10
4ohm meter is to 5 × 10
6ohm meter and containing two-end-point scope in), and the thickness of resistive layer 50 preferably can preferably from 0.15 micron to 1 micron and containing two-end-point scope in.As mentioned above, resistive layer 50 is containing zinc oxide.The crystal orientation of zinc oxide can comprise such as (002) indices of crystallographic plane component and (101) indices of crystallographic plane component.Except comprising (002) component and (101) component, the crystal orientation of zinc oxide can also comprise such as (001) component or (212) component.The two or more component that the crystal orientation of zinc oxide comprises among these components is just enough.Because the crystal orientation of zinc oxide comprises multiple indices of crystallographic plane component, so make the membrane stress of resistive layer 50 to reduce, and voltage is made can be reliably applied to organic layer 23.(101) component can be preferably more than 5% relative to the ratio (that is (101)/(002)) of (002) component, and can be more preferably more than 15%.By comprise relative to the ratio of (002) component be more than 5% (101) component, make the membrane stress of resistive layer 50 can be suppressed, and make organic EL device 20 can be reliably luminous.Zinc oxide is than such as niobium oxide (Nb
2o
5) etc. other high-resistance materials there is the optical characteristics of the optical characteristics closer to organic layer 23, the extraction efficiency of the light generated in luminescent layer 23A has been enhanced, and makes power consumption can be suppressed.Resistive layer 50 preferably can contain the zinc oxide of more than 30% ratio.
Resistive layer 50 preferably can contain the additive together with zinc oxide, to improve optical characteristics and regulating resistance rate.The example of the component of such additive can comprise: transition metal; Metalloid element; With the light element of atomic number with less than 30.The concrete example of these elements can comprise tin (Sn), indium (In), gallium (Ga), magnesium (Mg), calcium (Ca), aluminium (Al), silicon (Si), thallium (Tl), bismuth (Bi) and lead (Pb).Magnesium among aforementioned elements, aluminium and silicon can preferably contain.These elements multiple can be contained in resistive layer 50.Resistive layer 50 can be such additive of about 10% to 20% (comprising two-end-point) containing such as ratio.Resistive layer 50 can be amorphous film.When resistive layer 50 be formed by the dense film with low permeability, display part 1 can be configured to not arrange the protective layer 31 mentioned below.
Organic layer (not shown) can be provided with further between Semitransmissive reflectance coating 40 and resistive layer 50.This organic layer can comprise luminescent layer.
Second electrode 22 is arranged on resistive layer 50 under the state insulated with the first electrode 21, and is configured to be shared by all organic EL devices 20.Second electrode 22 is made up of light transmission transparent material.The example of this light transmission transparent material can comprise ITO, IZO, zinc oxide (ZnO), the zinc oxide (AZO) being mixed with aluminium oxide, the zinc oxide (GZO) being mixed with gallium, indium titanium oxide (ITiO) or indium tungsten oxide (IWO).About the second electrode 22, such as, such as ITO etc. can be preferably used to have the material of 1 ohm meter (100 ohm meter) specific insulation below.The thickness of the second electrode 22 can be such as 500nm.
Protective layer 31 can be preferably made up of following material: this material is only transparent to what generate in luminescent layer 23A, and is fine and close, and has low water penetration.The example of such material can comprise: amorphous silicon (α-Si); Noncrystalline silicon carbide (α-SiC); Amorphous silicon nitride (α-Si
1-xn
x); Amorphous silica (α-Si
1-yo
y); Amorphous carbon (α-C); Amorphous silicon oxinitride; With alundum (Al2O3) (Al
2o
3).
About adhesive linkage 32, such as, can use: the heat-curing type adhesives such as such as acryloid cement, epoxy adhesive, polyurethane series adhesive, silicone-based adhesive, cyanoacrylate system adhesive; Or ultraviolet curing type adhesive.
Subtend substrate 33 is positioned at the second electrode 22 side of organic EL device 20, and together with adhesive linkage 32 sealing organic el device 20.About subtend substrate 33, the material similar to the material of aforesaid supporting substrate 11 can be used, as long as this material is only transparent to what generate in luminescent layer 23A.In subtend substrate 33, such as colored filter and the photomask (being both not shown) as black matrix can be provided with.
The manufacture method of display part 1
Such as, (Fig. 6 A to Fig. 8 B) display part 1 as above can be manufactured as follows.
First, supporting substrate 11 forms TFT 10T.Particularly, after supporting substrate 11 arranges the gate electrode 12 in pattern-like, formation gate insulating film 13 and semiconductor layer are with cover gate electrode 12 successively.After this, channel region 15 and regions and source/drain 14A and 14B are set in described semiconductor layer, and thus form TFT 10T.Then, such as chemical vapour deposition (CVD) (CVD:Chemical Vapor Deposition) method can be utilized on TFT 10T to form silica.After this, utilize chemical etching that connecting hole is set in this silicon oxide film, then form interlayer insulating film 16A (Fig. 6 A).
Subsequently, such as vacuum evaporation method can be utilized on interlayer insulating film 16A to form aluminium.After this, formation distribution 17 is etched with to obtained aluminium.Distribution 17 is electrically connected to regions and source/drain 14A and the 14B of semiconductor layer by the contact site be arranged in interlayer insulating film 16A.After being provided with distribution 17, as shown in Figure 6B, the interlayer insulating film 16B be made up of such as silica can be formed.Can such as use the method similar to the method for interlayer insulating film 16A to form interlayer insulating film 16B.Interlayer insulating film 16B is provided with connecting hole in advance in the position relative with a part for distribution 17.
After being provided with interlayer insulating film 16B, such as vacuum evaporation method can being utilized to form Al-Nd alloy, obtained Al-Nd alloy is etched with to the first electrode 21 (Fig. 6 C) formed in pattern-like.First electrode 21 is electrically connected to distribution 17 by the contact site be arranged in interlayer insulating film 16B.Then, such as rotary coating method can be utilized to be formed to be made up of polyimides and be the insulating barrier 24 of 1 micron thickness.After this, insulating barrier 24 is etched, expose with part or all making the first electrode 21 thus opening 25 (Fig. 7 A) is set.
Subsequently, as shown in Figure 7 B, such as vacuum evaporation method can be utilized to form hole transport layer 23B, luminescent layer 23A and electron transport layer 23C successively in the opening 25 for each organic EL device 20, thus form organic layer 23.Then, the Semitransmissive reflectance coating 40 (Fig. 8 A) that the Mg-Ag (volume ratio: Mg:Ag=10:1) that such as vacuum evaporation method can be utilized to be formed by average film thickness on the whole surface of viewing area 110 (Fig. 2) is 5nm makes.Because be provided with fracture portion 40A in Semitransmissive reflectance coating 40, so Semitransmissive reflectance coating 40 can preferably such as 1 × 10
-3be formed under the relative lower pressure of below Pa.At this moment, by being that in the vacuum evaporator of same device, and then organic layer 23 continues to form Semitransmissive reflectance coating 40 at the vacuum evaporator with organic layer 23, the deterioration of the organic layer 23 caused because of the moisture in air and oxygen can be prevented.
After being provided with Semitransmissive reflectance coating 40, Semitransmissive reflectance coating 40 forms the resistive layer 50 containing zinc oxide.Such as, resistive layer 50 can have the thickness of 0.5 micron, and its resistivity can be 1 × 10
4ohm meter (1 × 10
6ohm meter).In order to improve covering, resistive layer 50 can preferably be formed under the relative high pressure such as (comprising two-end-point) from 0.1Pa to 10Pa.
Resistive layer 50 can preferably be formed to make zinc oxide excessive crystallization, to make the crystal orientation of zinc oxide contained in resistive layer 50 comprise multiple indices of crystallographic plane component, and such as (101) component and (002) component.Such as, when utilizing sputtering method to form resistive layer 50, if employ confinement plate, the quantity so with high-octane sputtering particle is reduced, and thus, can prevent excessive crystallization.Or, setting can be made with the collision making sputtering particle and carrier gas molecules occur more than five times, until sputtering particle arrives substrate.Particularly, first, use the rotary sputtering deposition device of substrate, and obviously confinement plate is being set in the position of target.Then, introduce relative to argon gas (Ar) be 1.5% oxygen (O
2), then such as can form resistive layer 50 under the chamber pressure of 0.7Pa.Chamber pressure is conditioned the collision making sputtering particle and carrier gas molecules occur more than five times, until sputtering particle arrives substrate.Therefore, such as, define the zinc oxide with following crystal orientation: in this crystal orientation, (101) component is 10% relative to the ratio of (002) component.As mentioned above, resistive layer 50 can be formed by being mixed with zinc oxide by additive.
After being provided with resistive layer 50, can being formed on resistive layer 50 and to be made up of such as ITO and thickness is second electrode 22 (Fig. 8 B) of 0.5 micron.The resistivity of the second electrode 22 can be such as 1 ohm meter (100 ohm meter).Such as, vacuum evaporation method, sputtering method or ion electroplating method etc. can be used to form the second electrode 22.
Subsequently, such as CVD method or sputtering method can be utilized on the whole surface of supporting substrate 11 to form protective layer 31.After this, subtend substrate 33 is sticked to protective layer 31 and adhesive linkage 32 between them between the two.Particularly; after the edge of supporting substrate 11 (protective layer 31) is provided with sealant (not shown), adhesive linkage 32 is filled in sealing agent to cling subtend substrate 33 (ODF method: liquid crystal drip-injection method (One Drop Fill)).Such as, adhesive linkage 32 can be heated, be fixed on supporting substrate 11 to make subtend substrate 33.Adhesive linkage 32 can be arranged at subtend substrate 33 side, or can use sheet adhesive linkage 32.So, complete the display part 1 shown in Fig. 1 to Fig. 3.
The function of display part 1 and effect
In display part 1, sweep signal is provided to each organic EL device 20 (20R, 20G and 20B) from scan line drive circuit 130 by the gate electrode of write transistor Tr2.Picture signal is provided to holding capacitor Cs from signal-line driving circuit 120 by write transistor Tr2, and is maintained in holding capacitor Cs.That is, driving transistors Tr1 is according to being maintained at the signal in holding capacitor Cs and controlling with being turned on/off.Therefore, drive current Id is injected in organic EL device 20, creates electron-hole compound, and therefore, sends light.This light by multiple reflections, is transmitted through Semitransmissive reflectance coating 40, resistive layer 50, second electrode 22 and subtend substrate 33, is then extracted between the first electrode 21 (interface P1) and Semitransmissive reflectance coating 40 (interface P2).By comprising such resonator structure, through the second electrode 22 and by the light of outgoing have resonance centre wavelength near wavelength, the colour purity of display light is enhanced, and its luminous intensity is also enhanced.
In this case, the resistive layer 50 containing zinc oxide is arranged between the first electrode 21 and the second electrode 22, particularly, between Semitransmissive reflectance coating 40 and the second electrode 22.Thus, the short circuit between the first electrode 21 and the second electrode 22 can be prevented more reliably, and can light extraction efficiency be improved.About these details, explanation will be provided below.
When display part 1 is manufactured, as shown in Figure 9, foreign matter F may stick on the first electrode 21.Due to foreign matter F, the covering of organic layer 23 becomes imperfect, and near foreign matter F, create the region not being formed with organic layer 23.Because other factors such as the protuberance on the such as part surface of the first electrode 21 except foreign matter F, also create the region not being formed with organic layer 23.In such region, the Semitransmissive reflectance coating 40 above organic layer 23 also has gap due to its little thickness.Therefore, do not arrange wherein in the display part of resistive layer, the short circuit between the first electrode and the second electrode can occur near foreign matter F, and display quality reduces.By contrast, in PTL 2 (end exit type), the method that the resistive layer be made up of indium oxide based compound is set between anode and organic layer is proposed.And, in PTL 3 (ejecting emitting), the method that the resistance disclosing the part making anode increases.In PTL 4 (end exit type), the method that the resistance disclosing the part making negative electrode increases.But as mentioned above, these methods all can not make the generation effectively preventing the bad device caused because of short circuit.
In the present embodiment, the resistive layer 50 containing zinc oxide is arranged between Semitransmissive reflectance coating 40 and the second electrode 22.Therefore, near foreign matter F, resistive layer 50 is sandwiched between the first electrode 21 and the second electrode 22.Therefore, the first electrode 21 can not directly contact each other with the second electrode 22, prevents near excessive current convergence to foreign matter F, and makes it possible to the whole surface of the organic layer 23 voltage being applied to organic EL device 20.Therefore, the short circuit between the first electrode 21 and the second electrode 22 can just be prevented more reliably.Even if it should be noted that to there is not Semitransmissive reflectance coating 40, but resistive layer 50 has enough charge-transport layer, and thus, voltage is reliably applied to organic layer 23 from the second electrode 22.
One seemingly reasonably idea be: the resistive layer between the first electrode and the second electrode can be made up (such as, PTL 5 and PTL 6) of the high-resistance material such as niobium oxide such as main component.Below the optical characteristics of niobium oxide and the optical characteristics of zinc oxide are compared.Have in the resistive layer as the niobium oxide of main component, refractive index (n) under 633nm wavelength is from 2.3 to 2.4 (comprising two-end-point), and the extinction coefficient (k) under 450nm wavelength is equal to or less than 0.005.By contrast, have in the resistive layer 50 as the zinc oxide of main component, refractive index (n) under 633nm wavelength is from 1.8 to 1.9 (comprising two-end-point), and the extinction coefficient (k) under 450nm wavelength is equal to or less than 0.001.That is, by containing zinc oxide in resistive layer 50, the optical characteristics of resistive layer 50 becomes the optical characteristics close to organic layer 23, and makes it possible to the light extraction efficiency improving display part 1.Therefore, just electric power can be saved.And colourity has also been lowered for the dependence at visual angle.
But when the crystal orientation of zinc oxide comprises single component (such as only having (002) indices of crystallographic plane component), the membrane stress of resistive layer increases.Therefore, can not resistive layer be formed uniformly, and between organic layer and resistive layer, the stripping of film may occur.Along with the size of display part is larger, form uniform films and just become more difficult.This is equally applicable to utilize large equipment to manufacture the situation of little display to improve manufacture efficiency.The stripping of film may make organic layer rupture, and the normal luminous of organic EL device may be obstructed.
In display part 1, because the crystal orientation of the zinc oxide in resistive layer 50 comprises multiple indices of crystallographic plane component, the membrane stress of resistive layer 50 has been reduced.Therefore, be planar formed uniformly resistive layer 50 to prevent the stripping of film, and voltage is reliably applied to organic layer 23.
Figure 10 illustrate wherein crystal orientation comprise (002) indices of crystallographic plane component and (101) indices of crystallographic plane component resistive layer 50 (zinc oxide) and wherein crystal orientation only include the measurement result utilizing X-ray diffraction method of the resistive layer 150 (zinc oxide) of (002) indices of crystallographic plane component.While the quantity at the peak of resistive layer 150 is 1 (2 θ: near 34 degree), in resistive layer 50, observed two peaks (2 θ: near 34 degree and 36 degree).
Figure 11 illustrates (101) component is relative to the relation between the ratio (that is (101)/(002)) of (002) component and stress.It should be noted that (101)/(002) be than obtaining from the peak strength of X-ray analysis.According to Figure 11, can find: along with (101) point quantitative change is large, stress diminishes.Be less than in the film of 5% (0.005) in (101)/(002), that is, when the absolute value of stress is greater than-400MPa, bad organic EL device can be seen continually.By contrast, be equal to or greater than in the film of 5% in (101)/(002), nearly all organic EL device 20 can be normally luminous.Be less than having in the film (so-called unstressed film) slowing down stress of 250MPa ((101)/(002) is equal to or greater than 15%) at stress absolute value, all organic EL device 20 normal luminous can be made more reliably.When the crystal orientation of zinc oxide only includes (002) indices of crystallographic plane component, the ratio of bad organic EL device is more than 30%; When (101)/(002) is 1.9%, the ratio of bad organic EL device is 0.1929%; When (101)/(002) is 17.1%, the ratio of bad organic EL device is 0.0096%; And when (101)/(002) is 46.2%, the ratio of bad organic EL device is 0.0039%.
As mentioned above, in the present embodiment, the resistive layer 50 containing zinc oxide is arranged between the first electrode 21 and the second electrode 22, and the crystal orientation of zinc oxide comprises multiple indices of crystallographic plane component.Therefore, it is possible to prevent the short circuit between the first electrode 21 and the second electrode 22 more reliably, and light extraction efficiency can be improved.
Below, the explanation of the variation of previous embodiment will be provided.In the following description, for the parts identical with the parts in previous embodiment, by their identical Reference numerals of imparting, and will suitably omit their explanation.
Variation 1
Figure 12 illustrates the cross-sectional configuration of the display part (display part 1A) of variation 1.Display part 1A has the conductive resin layer 60 between resistive layer 50 and the second electrode 22.Except aforesaid this point, display part 1A has the structure similar to the structure of display part 1, and its operation and effect are similar to operation and the effect of display part 1.
Conductive resin layer 60 bears the conduction between the second electrode 22 and resistive layer 50.The resistivity of conductive resin layer 60 can be such as from 1 × 10
-4ohm meter is to 1 × 10
2ohm meter and containing two-end-point scope in (from 1 × 10
-2ohm meter is to 1 × 10
4ohm meter and containing two-end-point scope in).The thickness of conductive resin layer 60 can be such as from 1 micron to 100 microns and containing in the scope of two-end-point.About conductive resin layer 60, such as, the material obtained by comprising conducting polymer in resin material can be used.The example of resin material can comprise: the thermohardening type resins such as such as acrylic resin, epoxy resin, polyurethane series resin, silicone-based resin and cyanoacrylate system resin; Or ultraviolet curing type resin.The example of conducting polymer can comprise polypyrrole, polyethers, polyaniline and polythiophene.Conductive resin layer 60 can be made up of copolymer.This copolymer can such as be formed by making the such as conducting polymer such as pyrroles and thiophene and acrylate copolymer, epoxy polymer, polyurethane series polymer, silicone-based polymer or the combined polymerization of cyanoacrylate based polymer.
In the display part 1A with conductive resin layer 60, protective layer 31 and adhesive linkage 32 (Figure 12) can be omitted.Such display part 1A can create by the subtend substrate 33 being provided with the second electrode 22 being adhered to the supporting substrate 11 that is provided with organic layer 23.That is, because step organic layer 23 being formed the second electrode 22 can be omitted in, so the deterioration of organic layer 23 can be prevented.And this makes it possible to form high-quality second electrode 22.
Variation 2
Figure 13 illustrates the cross-sectional configuration of the display part (display part 1B) of variation 2.Display part 1B has auxiliary electrode 70.Second electrode 22 is electrically connected to external circuit by auxiliary electrode 70.Except aforesaid this point, display part 1B has the structure similar to the structure of display part 1, and its operation and effect are similar to operation and the effect of display part 1.
Such as, auxiliary electrode 70 can be electrically connected to the second electrode 22 by the conductive ribs (conductive rib) 71 be arranged in adhesive linkage 32.Rib 71 can by arranging conductive material membrane to obtain on the surface of the rib be made up of such as polyimide resin or acrylic resin etc.The example of this conductive material membrane can comprise aluminium, silver, copper, titanium, tungsten, tantalum, molybdenum, ITO, IZO and tin oxide.The height of rib 71 can be such as 5 microns.Auxiliary electrode 70 can be made up of the aluminium of such as 1 micron thickness.
Variation 3
Figure 14 illustrates the cross-sectional configuration of the display part (display part 1C) of variation 3.Display part 1C has extraction electrode 80.Second electrode 22 is connected to external circuit by extraction electrode 80.Except aforesaid this point, display part 1C has the structure similar to the structure of display part 1, and its operation and effect are similar to operation and the effect of display part 1.
As shown in figure 15, extraction electrode 80 can such as be arranged on the edge of subtend substrate 33 with the state of framework.A part for extraction electrode 80 is overlapped in (overlapping portion 80A) on the second electrode 22.Extraction electrode 80 can be made up of such as titanium.Extraction electrode 80 can be arranged at supporting substrate 11 side (Figure 16).
Module and application examples
The explanation of the application examples of display part illustrated in previous embodiment will be provided.The display part 1 of previous embodiment is applicable to the display part for the vision signal inputted from outside or the vision signal that generates in inside being shown as the electronic equipment in any field of image or video, and this electronic equipment is such as portable terminal device and the camcorder such as television set, digital camera, notebook-PC, such as mobile phone.
Module
Such as, as shown in figure 17, the display part 1 of previous embodiment etc., 1A, 1B and 1C (hereinafter, referred to as display part 1) can be merged in as module in the various electronic equipments such as application examples 1 to the application examples 5 such as mentioned below.In this module; such as; be provided with the region 210 of coming out from protective layer 31 and subtend substrate 33 at one side place of supporting substrate 11, and in exposed region 210, define external connection terminal (not shown) by making the distribution of signal-line driving circuit 120 and scan line drive circuit 130 extend.This external connection terminal can be provided with flexible print circuit (FPC:flexible printed circuit) 220 so that input and output signal.
Application examples 1
Figure 18 illustrates the outward appearance of the television set of the display part 1 applying previous embodiment.This television set can have the image display panel portion 300 such as comprising front panel 310 and filter glass 320.Image display panel portion 300 is made up of the display part 1 of previous embodiment.
Application examples 2
Figure 19 A and Figure 19 B illustrates the outward appearance of the digital camera of the display part 1 applying previous embodiment etc.This digital camera can have illuminating part 410, display part 420, menu switch 430 and shutter release button 440 such as glistening.Display part 420 is made up of the display part 1 of previous embodiment.
Application examples 3
Figure 20 illustrates the outward appearance of the notebook-PC of display part 1 grade applying previous embodiment.This notebook-PC can have such as main body 510, for the keyboard 520 of the operation of input character etc. and the display part 530 for showing image.Display part 530 is made up of the display part 1 of previous embodiment.
Application examples 4
Figure 21 illustrates the outward appearance of the camcorder of the display part 1 applying previous embodiment.This camcorder can have such as main body 610, be arranged on the front side surface of main body 610 and for take subject lens 620, for the start/stop switch 630 taken and display part 640.Display part 640 is made up of the display part 1 of previous embodiment.
Application examples 5
Figure 22 A and Figure 22 B illustrates the outward appearance of the mobile phone of the display part 1 applying previous embodiment.In this mobile phone, such as, upper shell 710 and lower house 720 can pass through junction surface (hinge part) 730 and be engaged.This mobile phone can have display part 740, secondary display part 750, picture lamp 760 and camera 770.Any one or both in display part 740 and secondary display part 750 are made up of the display part 1 of previous embodiment.
Application examples 6
Figure 23 illustrates the outward appearance of the smart mobile phone (multi-functional mobile phone) of the display part 1 applying previous embodiment.This smart mobile phone can be made up of such as display part 810 and non-display portion 820.This smart mobile phone can be operated by display part 810, that is, display part 810 has contact panel.Display part 810 is made up of the display part 1 of previous embodiment.
Although describe this technology with reference to preferred embodiment and variation, this technology is not limited to previous embodiment etc., and can make various distortion.Such as, the material, thickness, film build method, membrance casting condition etc. of each layer are not limited to illustrated those in previous embodiment, and can adopt other materials, other thickness, other film build methods and other membrance casting conditions.
And in previous embodiment etc., the luminescent layer 23A given in organic layer 23 sends the explanation of the situation of ruddiness, green glow and blue light.But the light sent can be the light of such as other colors such as white light and gold-tinted.And, such as, in previous embodiment etc., give the explanation of active array type display part.But this technology can be applicable to passive matrix display part.
In addition, in previous embodiment etc., given the first electrode 21 and be anode and the second electrode 22 is explanations of the situation of negative electrode.But in the opposite manner, the first electrode 21 can be negative electrode and the second electrode 22 can be anode.In addition, light can be extracted (end exit type) from supporting substrate 11 side.
In addition, this technology can be applicable to the display part without resonator structure.
In addition, in previous embodiment etc., given the explanation of the situation of resistive layer 50 containing zinc oxide between the first electrode 21 and the second electrode 22.But the second electrode 22 can contain zinc oxide.The crystal orientation of zinc oxide comprises multiple indices of crystallographic plane component.Therefore, the stress of the second electrode 22 has been released.So even if when large-sized display part (display), the whole surface of this display part also can be more luminous.
It should be noted that this technology can be constructed to as follows.
(1) luminescent device, it comprises:
First electrode;
Organic layer, it comprises luminescent layer;
Resistive layer, it comprises zinc oxide; And
Second electrode,
Described first electrode, described organic layer, described resistive layer and described second electrode are set up in this order,
The crystal orientation of wherein said zinc oxide comprises multiple indices of crystallographic plane component.
(2) luminescent device as described in (1), the described crystal orientation of wherein said zinc oxide comprises (002) component and at least one component except described (002) component.
(3) luminescent device as described in (1) or (2), the described crystal orientation of wherein said zinc oxide comprises (002) component and (101) component.
(4) luminescent device as described in (3), described (101) component of wherein said zinc oxide is equal to or greater than about 5% relative to the ratio (that is (101)/(002)) of described (002) component.
(5) luminescent device according to any one of (1) to (4), the specific insulation of wherein said resistive layer is from about 1 × 10
2ohm meter is to about 1 × 10
6ohm meter and containing two-end-point scope in, and the thickness of described resistive layer be from about 0.1 micron to about 10 microns and containing two-end-point scope in.
(6) luminescent device according to any one of (1) to (5), the specific insulation of wherein said resistive layer is from about 5 × 10
2ohm meter is to about 5 × 10
4ohm meter and containing two-end-point scope in, and the thickness of described resistive layer be from about 0.15 micron to about 1 micron and containing two-end-point scope in.
(7) luminescent device according to any one of (1) to (6), wherein said zinc oxide comprises multiple peak at X-ray diffraction.
(8) luminescent device according to any one of (1) to (7), wherein said resistive layer comprises the additive together with described zinc oxide.
(9) luminescent device as described in (8), wherein said additive comprises at least one element in following elements: tin (Sn), indium (In), gallium (Ga), magnesium (Mg), calcium (Ca), aluminium (Al), silicon (Si), thallium (Tl), bismuth (Bi), plumbous (Pb).
(10) luminescent device according to any one of (1) to (9), wherein
Semitransmissive reflectance coating is comprised between described resistive layer and described organic layer, and
Light from described luminescent layer resonates at the first interface between described first electrode and described organic layer with between the second contact surface between described Semitransmissive reflectance coating and described organic layer.
(11) display part, it is provided with multiple luminescent device, and each described luminescent device comprises:
First electrode;
Organic layer, it comprises luminescent layer;
Resistive layer, it comprises zinc oxide; And
Second electrode,
Described first electrode, described organic layer, described resistive layer and described second electrode are set up in this order,
The crystal orientation of wherein said zinc oxide comprises multiple indices of crystallographic plane component.
(12) electronic equipment, it is provided with display part, and described display part is provided with multiple luminescent device, and each described luminescent device comprises:
First electrode;
Organic layer, it comprises luminescent layer;
Resistive layer, it comprises zinc oxide; And
Second electrode,
Described first electrode, described organic layer, described resistive layer and described second electrode are set up in this order,
The crystal orientation of wherein said zinc oxide comprises multiple indices of crystallographic plane component.
The present invention comprises the relevant theme of the theme disclosed in Japanese Priority Patent Application JP 2012-167986 submitted to Japan Office on July 30th, 2012, is therefore incorporated herein by reference by the full content of this Japanese priority application.
It will be appreciated by those skilled in the art that according to designing requirement and other factors, in the claim can enclosed in the present invention or the scope of its equivalent, carry out various amendment, combination, secondary combination and change.
Reference numerals list
1,1A, 1B, 1C display part
11 supporting substrates
12 gate electrodes
13 gate insulating films
14A, 14B regions and source/drain
15 channel regions
16A, 16B interlayer insulating film
17 distributions
10T TFT
20,20R, 20G, 20B organic EL device
21 first electrodes
22 second electrodes
23 organic layers
23A luminescent layer
23B hole transport layer
23C electron transport layer
24 insulating barriers
25 openings
31 protective layers
32 adhesive linkages
33 subtend substrates
40 Semitransmissive reflectance coatings
40A fracture portion
50 resistive layers
60 conductive resin layers
70 auxiliary electrodes
71 ribs
80 extraction electrodes
Claims (12)
1. a luminescent device, it comprises:
First electrode;
Organic layer, described organic layer comprises luminescent layer;
Resistive layer, described resistive layer comprises zinc oxide; And
Second electrode,
Described first electrode, described organic layer, described resistive layer and described second electrode are set up in this order,
The crystal orientation of wherein said zinc oxide comprises multiple indices of crystallographic plane component.
2. luminescent device as claimed in claim 1, the described crystal orientation of wherein said zinc oxide comprises (002) component and at least one component except described (002) component.
3. luminescent device as claimed in claim 1, the described crystal orientation of wherein said zinc oxide comprises (002) component and (101) component.
4. luminescent device as claimed in claim 3, described (101) component of wherein said zinc oxide is about more than 5% relative to the ratio of described (002) component that is (101)/(002).
5. luminescent device as claimed in claim 1, the specific insulation of wherein said resistive layer is from about 1 × 10
2ohm meter is to about 1 × 10
6ohm meter and containing two-end-point scope in, and the thickness of described resistive layer be from about 0.1 micron to about 10 microns and containing two-end-point scope in.
6. luminescent device as claimed in claim 1, the specific insulation of wherein said resistive layer is from about 5 × 10
2ohm meter is to about 5 × 10
4ohm meter and containing two-end-point scope in, and the thickness of described resistive layer be from about 0.15 micron to about 1 micron and containing two-end-point scope in.
7. luminescent device as claimed in claim 1, wherein said zinc oxide comprises multiple peak at X-ray diffraction.
8. luminescent device as claimed in claim 1, wherein said resistive layer comprises the additive together with described zinc oxide.
9. luminescent device as claimed in claim 8, wherein said additive comprises at least one element in following elements: tin (Sn), indium (In), gallium (Ga), magnesium (Mg), calcium (Ca), aluminium (Al), silicon (Si), thallium (Tl), bismuth (Bi), plumbous (Pb).
10. luminescent device as claimed in claim 1, wherein
Semitransmissive reflectance coating is comprised between described resistive layer and described organic layer, and
Light from described luminescent layer resonates at the first interface between described first electrode and described organic layer with between the second contact surface between described Semitransmissive reflectance coating and described organic layer.
11. 1 kinds of display parts, it is provided with multiple luminescent device, and each described luminescent device comprises:
First electrode;
Organic layer, described organic layer comprises luminescent layer;
Resistive layer, described resistive layer comprises zinc oxide; And
Second electrode,
Described first electrode, described organic layer, described resistive layer and described second electrode are set up in this order,
The crystal orientation of wherein said zinc oxide comprises multiple indices of crystallographic plane component.
12. 1 kinds of electronic equipments, it is provided with display part, and described display part is provided with multiple luminescent device, and each described luminescent device comprises:
First electrode;
Organic layer, described organic layer comprises luminescent layer;
Resistive layer, described resistive layer comprises zinc oxide; And
Second electrode,
Described first electrode, described organic layer, described resistive layer and described second electrode are set up in this order,
The crystal orientation of wherein said zinc oxide comprises multiple indices of crystallographic plane component.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-167986 | 2012-07-30 | ||
| JP2012167986A JP2014027192A (en) | 2012-07-30 | 2012-07-30 | Light-emitting element, display device having the same, and electronic apparatus |
| PCT/JP2013/004400 WO2014020850A1 (en) | 2012-07-30 | 2013-07-18 | Light emitting device, display unit including the same, and electronic apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104335380A true CN104335380A (en) | 2015-02-04 |
Family
ID=48998655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380026234.7A Pending CN104335380A (en) | 2012-07-30 | 2013-07-18 | Light emitting device, display unit including the same, and electronic apparatus |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2014027192A (en) |
| KR (1) | KR20150040249A (en) |
| CN (1) | CN104335380A (en) |
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| WO (1) | WO2014020850A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023205922A1 (en) * | 2022-04-24 | 2023-11-02 | 京东方科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method therefor, and display panel |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9269749B2 (en) * | 2014-07-07 | 2016-02-23 | Au Optronics Corporation | Organic electroluminescence display panel |
| WO2016043084A1 (en) * | 2014-09-18 | 2016-03-24 | 旭硝子株式会社 | Light emitting element and power generation element |
| CN106797684B (en) * | 2014-10-17 | 2020-06-05 | 株式会社半导体能源研究所 | Light-emitting device, module, electronic apparatus, and method for manufacturing light-emitting device |
| KR102632619B1 (en) * | 2015-11-23 | 2024-02-02 | 삼성디스플레이 주식회사 | Organic light-emitting display apparatus |
| CN105489632A (en) * | 2016-01-15 | 2016-04-13 | 京东方科技集团股份有限公司 | Organic light-emitting diode (OLED) array substrate, manufacturing method thereof, OLED display panel and OLED display device |
| TWI688094B (en) * | 2019-04-17 | 2020-03-11 | 友達光電股份有限公司 | Light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9907120D0 (en) | 1998-12-16 | 1999-05-19 | Cambridge Display Tech Ltd | Organic light-emissive devices |
| JP2001035667A (en) | 1999-07-27 | 2001-02-09 | Tdk Corp | Organic el element |
| US7102282B1 (en) | 1999-11-22 | 2006-09-05 | Sony Corporation | Display device with a cavity structure for resonating light |
| US7196469B2 (en) * | 2004-06-18 | 2007-03-27 | Eastman Kodak Company | Reducing undesirable absorption in a microcavity OLED |
| JP4844014B2 (en) | 2005-05-31 | 2011-12-21 | ソニー株式会社 | ORGANIC EL ELEMENT, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ORGANIC EL ELEMENT |
| US8063552B2 (en) * | 2007-10-22 | 2011-11-22 | Global Oled Technology Llc | LED device having improved light output |
| JP2011040244A (en) | 2009-08-10 | 2011-02-24 | Sony Corp | Light-emitting element |
| JP5423325B2 (en) * | 2009-11-10 | 2014-02-19 | ソニー株式会社 | Light emitting device and manufacturing method thereof |
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2012
- 2012-07-30 JP JP2012167986A patent/JP2014027192A/en active Pending
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2013
- 2013-07-02 TW TW102123710A patent/TW201405909A/en unknown
- 2013-07-18 WO PCT/JP2013/004400 patent/WO2014020850A1/en active Application Filing
- 2013-07-18 CN CN201380026234.7A patent/CN104335380A/en active Pending
- 2013-07-18 KR KR20147030363A patent/KR20150040249A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023205922A1 (en) * | 2022-04-24 | 2023-11-02 | 京东方科技集团股份有限公司 | Quantum dot light-emitting diode and preparation method therefor, and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201405909A (en) | 2014-02-01 |
| KR20150040249A (en) | 2015-04-14 |
| JP2014027192A (en) | 2014-02-06 |
| WO2014020850A1 (en) | 2014-02-06 |
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Application publication date: 20150204 |