CN104330958A - Preparation method of positive photoresist developing solution - Google Patents
Preparation method of positive photoresist developing solution Download PDFInfo
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- CN104330958A CN104330958A CN201410574835.8A CN201410574835A CN104330958A CN 104330958 A CN104330958 A CN 104330958A CN 201410574835 A CN201410574835 A CN 201410574835A CN 104330958 A CN104330958 A CN 104330958A
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Abstract
The invention relates to a preparation method of an ortho-photoresist developing solution, which is characterized by comprising the steps of conveying tetramethyl ammonium hydroxide into a configuration tank, introducing pure water into the configuration tank, diluting the tetramethyl ammonium hydroxide, introducing polyethylene glycol, washed ammonia gas and potassium hydroxide into the configuration tank according to the mass ratio of 2.5-3: 0.5-1.2, wherein the total introduction amount of the polyethylene glycol, the washed ammonia gas and the washed potassium hydroxide is 0.1% -0.3%, the concentration of the final tetramethyl ammonium hydroxide is 2.37% -2.39%, and filtering to obtain a finished product. The positive photoresist developing solution prepared by the preparation method of the positive photoresist developing solution has low surface tension, can avoid reaction with carbon dioxide, and has no spots on the surface of a product.
Description
Technical field
The present invention relates to a kind of developer for positive photoresist preparation method.
Background technology
TMAH, namely Tetramethylammonium hydroxide can as the developer for positive photoresist in lithographic process.For large-sized product, need first in alkaline bath, to use developer for positive photoresist to develop to product, then product is taken out, rinse with clear water again, product generally wishes after taking out that a small amount of as far as possible product surface that is attached to of developer for positive photoresist is convenient to follow-up clear water and is rinsed, and therefore needs developer for positive photoresist to have lower surface tension.Can expose in atmosphere remain in the developer for positive photoresist on product after product takes out alkaline bath after, the TMAH remained on product can react with the carbon dioxide in air, product forms spot, after through clear water rinse also be difficult to remove, affect product quality.Therefore seek a kind of developer for positive photoresist produced and there is low surface tension, avoid with the developer for positive photoresist preparation method of carbon dioxide reaction particularly important.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, provide a kind of developer for positive photoresist produced to have low surface tension, avoid the developer for positive photoresist preparation method with carbon dioxide reaction.
The object of the present invention is achieved like this:
A kind of developer for positive photoresist preparation method, described method is delivered in batch tank by Tetramethylammonium hydroxide, pure water is passed into batch tank, Tetramethylammonium hydroxide is diluted, the ammonia after polyglycol, washing and potassium hydroxide is passed into according to the mass ratio of 2.5 ~ 3:0.5 ~ 1.2:0.5 ~ 1.2 in batch tank, ammonia after described polyglycol, washing and the total amount that passes into of potassium hydroxide are 0.1% ~ 0.3%, make the concentration of final Tetramethylammonium hydroxide be 2.37% ~ 2.39%, obtain finished product after filtration.
Further, pass into polyglycol, washing after ammonia and potassium hydroxide before, Tetramethylammonium hydroxide is diluted to 2.4%.
Further, prepare environment ten thousand grades, hundred grades, canned district.
Further, the ammonia after the polyglycol passed into, washing and the mass ratio of potassium hydroxide are 3:1:1.
Preferred version, Tetramethylammonium hydroxide is delivered in batch tank, pure water is passed into batch tank, 2.4% is diluted to Tetramethylammonium hydroxide, the ammonia after polyglycol, washing and potassium hydroxide is passed into according to the ratio of mass ratio 3:1:1 in batch tank, the concentration of final Tetramethylammonium hydroxide is 2.38%, obtains finished product after filtration.
Compared with prior art, the invention has the beneficial effects as follows:
Developer for positive photoresist preparation method of the present invention, the polyglycol passed into is surfactant, the surface tension of developer for positive photoresist finished product can be made to be reduced to 48 ~ 52 dyne by 75 ~ 76 traditional dyne, the potassium hydroxide passed into is adjuvant, developer for positive photoresist finished product is first reacted in carbon dioxide by potassium hydroxide in atmosphere, thus avoid Tetramethylammonium hydroxide and carbon dioxide exposure to react, avoid the formation of spot.Ammonia passes into wherein, forms ammoniacal liquor, is placed in air and can produces smoke event, intercepts Tetramethylammonium hydroxide further and contacts with air.
Embodiment
Embodiment 1
A kind of developer for positive photoresist preparation method, Tetramethylammonium hydroxide is delivered in batch tank, pure water is passed into batch tank, high-purity Tetramethylammonium hydroxide (concentration 25%) is diluted, be diluted to 2.4%, in batch tank, pass into the ammonia after polyglycol, washing and potassium hydroxide according to the mass ratio of 3:1:1, make the concentration of final Tetramethylammonium hydroxide be 2.38%, obtain finished product after filtration.Prepare environment ten thousand grades, hundred grades, canned district.
Obtained developer for positive photoresist surface tension is 49 dyne, and in use procedure, wellability is good, and after using, product surface immaculate, development effect is good.
Embodiment 2
A kind of developer for positive photoresist preparation method, Tetramethylammonium hydroxide is delivered in batch tank, pure water is passed into batch tank, 2.4% is diluted to Tetramethylammonium hydroxide, the ammonia after polyglycol, washing and potassium hydroxide is passed into according to the ratio of mass ratio 3:1:1 in batch tank, the concentration of final Tetramethylammonium hydroxide is 2.36%, obtains finished product after filtration.Prepare environment ten thousand grades, hundred grades, canned district.
Obtained developer for positive photoresist surface tension is 48 dyne, and in use procedure, wellability is good, and after using, product surface immaculate, development effect is good.
Embodiment 3
A kind of developer for positive photoresist preparation method, Tetramethylammonium hydroxide is delivered in batch tank, pure water is passed into batch tank, 2.4% is diluted to Tetramethylammonium hydroxide, the ammonia after polyglycol, washing and potassium hydroxide is passed into according to the ratio of mass ratio 2.5:1:1 in batch tank, the concentration of final Tetramethylammonium hydroxide is 2.38%, obtains finished product after filtration.Prepare environment ten thousand grades, hundred grades, canned district.
Obtained developer for positive photoresist surface tension is 50 dyne, and in use procedure, wellability is good, and after using, product surface immaculate, development effect is good.
Embodiment 4
A kind of developer for positive photoresist preparation method, Tetramethylammonium hydroxide is delivered in batch tank, pure water is passed into batch tank, Tetramethylammonium hydroxide is diluted, be diluted to 2.4%, in batch tank, pass into the ammonia after polyglycol, washing and potassium hydroxide according to the ratio of mass ratio 2.5:1:1.2, the concentration of final Tetramethylammonium hydroxide is 2.37%, obtains finished product after filtration.Prepare environment ten thousand grades, hundred grades, canned district.
Obtained developer for positive photoresist surface tension is 52 dyne, and in use procedure, wellability is good, and after using, product surface immaculate, development effect is good.
Embodiment 5
A kind of developer for positive photoresist preparation method, Tetramethylammonium hydroxide is delivered in batch tank, pure water is passed into batch tank, Tetramethylammonium hydroxide is diluted, be diluted to 2.4%, in batch tank, pass into the ammonia after polyglycol, washing and potassium hydroxide according to the ratio of mass ratio 3:1:1.2, the concentration of final Tetramethylammonium hydroxide is 2.39%, obtains finished product after filtration.Prepare environment ten thousand grades, hundred grades, canned district.
Obtained developer for positive photoresist surface tension is 51 dyne, and in use procedure, wellability is good, and after using, product surface immaculate, development effect is good.
Embodiment 6
A kind of developer for positive photoresist preparation method, Tetramethylammonium hydroxide is delivered in batch tank, pure water is passed into batch tank, Tetramethylammonium hydroxide is diluted, be diluted to 2.4%, in batch tank, pass into the ammonia after polyglycol, washing and potassium hydroxide according to the ratio of mass ratio 3:0.8:1.2, the concentration of final Tetramethylammonium hydroxide is 2.39%, obtains finished product after filtration.Prepare environment ten thousand grades, hundred grades, canned district.
Obtained developer for positive photoresist surface tension is 50 dyne, and in use procedure, wellability is good, and after using, product surface immaculate, development effect is good.
Claims (5)
1. a developer for positive photoresist preparation method, it is characterized in that, described method is delivered in batch tank by Tetramethylammonium hydroxide, pure water is passed into batch tank, Tetramethylammonium hydroxide is diluted, the ammonia after polyglycol, washing and potassium hydroxide is passed into according to the mass ratio of 2.5 ~ 3:0.5 ~ 1.2:0.5 ~ 1.2 in batch tank, ammonia after described polyglycol, washing and the total amount that passes into of potassium hydroxide are 0.1% ~ 0.3%, make the concentration of final Tetramethylammonium hydroxide be 2.37% ~ 2.39%, obtain finished product after filtration.
2. developer for positive photoresist preparation method according to claim 1, is characterized in that, pass into polyglycol, washing after ammonia and potassium hydroxide before, Tetramethylammonium hydroxide is diluted to 2.4%.
3. developer for positive photoresist preparation method according to claim 1, is characterized in that, prepares environment ten thousand grades, hundred grades, canned district.
4. according to the developer for positive photoresist preparation method one of claim 1-3 Suo Shu, it is characterized in that, the ammonia after the polyglycol passed into, washing and the mass ratio of potassium hydroxide are 3:1:1.
5. developer for positive photoresist preparation method according to claim 4, it is characterized in that, Tetramethylammonium hydroxide is delivered in batch tank, pure water is passed into batch tank, 2.4% is diluted to Tetramethylammonium hydroxide, in batch tank, pass into the ammonia after polyglycol, washing and potassium hydroxide according to the ratio of mass ratio 3:1:1, the concentration of final Tetramethylammonium hydroxide is 2.38%, obtains finished product after filtration.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109407477A (en) * | 2018-11-13 | 2019-03-01 | 南通赛可特电子有限公司 | A kind of developer solution and preparation method thereof |
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| CN101750888A (en) * | 2008-12-04 | 2010-06-23 | 韩国锦湖石油化学株式会社 | Photoacid generator, copolymer, chemically amplified resist composition, and method of forming pattern using the chemically amplified resist composition |
| CN101813896A (en) * | 2010-04-01 | 2010-08-25 | 江阴市江化微电子材料有限公司 | Developing solution of low-tension positive photoresist |
| CN102030643A (en) * | 2009-10-06 | 2011-04-27 | 韩国锦湖石油化学株式会社 | Acrylic monomer, polymer and chemically amplication photoresist composition |
| CN102483574A (en) * | 2009-07-17 | 2012-05-30 | Jsr株式会社 | Radiation-sensitive resin composition and compound |
| CN102540772A (en) * | 2011-12-30 | 2012-07-04 | 江阴江化微电子材料股份有限公司 | Low-tension developer for positive photoresist and preparation method thereof |
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2014
- 2014-10-25 CN CN201410574835.8A patent/CN104330958B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1281151A (en) * | 1999-04-27 | 2001-01-24 | 捷时雅株式会社 | Ink jet colour filter resin composition, colour filter and manufacturing method thereof |
| CN1550895A (en) * | 2003-02-06 | 2004-12-01 | ��ķ��˹���Ӳ����������ι�˾ | Negative type photosensitive resin composition containing a phenol-biphenylene resin |
| CN101684086A (en) * | 2008-09-23 | 2010-03-31 | 锦湖石油化学株式会社 | Onium salt compound, polymer compound comprising the salt compound, chemically amplified resist composition comprising the polymer compound, and method for patterning using the composition |
| CN101750888A (en) * | 2008-12-04 | 2010-06-23 | 韩国锦湖石油化学株式会社 | Photoacid generator, copolymer, chemically amplified resist composition, and method of forming pattern using the chemically amplified resist composition |
| CN102483574A (en) * | 2009-07-17 | 2012-05-30 | Jsr株式会社 | Radiation-sensitive resin composition and compound |
| CN102030643A (en) * | 2009-10-06 | 2011-04-27 | 韩国锦湖石油化学株式会社 | Acrylic monomer, polymer and chemically amplication photoresist composition |
| CN101813896A (en) * | 2010-04-01 | 2010-08-25 | 江阴市江化微电子材料有限公司 | Developing solution of low-tension positive photoresist |
| CN102540772A (en) * | 2011-12-30 | 2012-07-04 | 江阴江化微电子材料股份有限公司 | Low-tension developer for positive photoresist and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109407477A (en) * | 2018-11-13 | 2019-03-01 | 南通赛可特电子有限公司 | A kind of developer solution and preparation method thereof |
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