CN104330842A - Novel brightness-enhancing scattering film - Google Patents

Novel brightness-enhancing scattering film Download PDF

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Publication number
CN104330842A
CN104330842A CN201410568630.9A CN201410568630A CN104330842A CN 104330842 A CN104330842 A CN 104330842A CN 201410568630 A CN201410568630 A CN 201410568630A CN 104330842 A CN104330842 A CN 104330842A
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CN
China
Prior art keywords
film
scattering
medium
interface
parent
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410568630.9A
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Chinese (zh)
Inventor
朱文清
孙亮亮
汤梅
钱冰洁
肖腾
俞静婷
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University of Shanghai for Science and Technology
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University of Shanghai for Science and Technology
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Application filed by University of Shanghai for Science and Technology filed Critical University of Shanghai for Science and Technology
Priority to CN201410568630.9A priority Critical patent/CN104330842A/en
Publication of CN104330842A publication Critical patent/CN104330842A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
    • G02B5/0242—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • G02B5/0215—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having a regular structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0273—Diffusing elements; Afocal elements characterized by the use
    • G02B5/0284—Diffusing elements; Afocal elements characterized by the use used in reflection

Abstract

The invention discloses a novel brightness-enhancing scattering film which can be used for liquid crystal, LED, OLED and the like display devices and light-emitting elements. The brightness-enhancing scattering film comprises a polymer matrix medium (1), scattering mediums (2) imbedded in the matrix and an uneven texturized interface (3). The film in the invention can improve the visual angle of the device, and meanwhile can improve light extraction efficiency of the device better, so that the brightness is improved; the purpose of unifying high efficiency and visual sense uniformity is achieved; energy-saving and cost-reducing performances are achieved; and the film has wide application prospect.

Description

A kind of novel blast scattering film
Technical field
The present invention relates to a kind of novel blast scattering film, while improving device visual angle, can improve the light extraction efficiency of device higher, effectively improve brightness, reduce energy consumption.
Background technology
Scattering film has become the important functional material in the fields such as illumination, optics display, Lighting Design, both soluble visual angle asymmetry problem, illumination and display system can also be made to reach high effect and the mutually unified object of visual uniformity, and the illumination combined with perfect vision for efficient, low damage, high uniformity and display device provide guarantee.
Visual angle size is one of important parameter evaluating display device performance.The vertical direction angulation of sight line and display etc., screen reflection is in all directions different, in the horizontal direction from screen center more away from, brightness is lower; Viewing angle when brightness drops to 50%, is defined as visual angle.Visual angle is also one of main deficiency of liquid crystal display, and when backlight is by after bias pole piece, liquid crystal and oriented layer, the light of output is just provided with directivity.That is most of light all from screen vertical sand shooting out, so from some larger angles viewing liquid crystal display time, just can not see color originally, even can only see entirely white or entirely black.Therefore, increase visual angle and have positive role to raising device performance.
In addition, various luminescent device is all piling up of multilayer material, due to the light absorptive of the refractive index difference that (comprises substrate and air) between each layer and material, can not penetrate device completely by the enable light sent from luminescent layer.External quantum efficiency is just used to this performance of evaluator part, and external quantum efficiency is larger, illustrates that the efficiency of device is higher, and the energy consumption in same brightness situation is just relatively low.Therefore, we should improve the external quantum efficiency of device as far as possible.
In the present invention, utilize novel scattering brightness enhancement film, scattering medium can change the round of light, use textured interface simultaneously, change its incident angle, while improving light extraction efficiency, improve the visual angle of device, effectively can improve device performance, be with a wide range of applications.
Summary of the invention
The object of this invention is to provide a kind of novel blast scattering film, it is characterized in that it is by polymer matrix medium, embed the scattering medium in parent, and the textured interface composition of non-flat forms.Wherein said polymer matrix dielectric material is: PVA(polyvinyl alcohol (PVA)), PMMA(polymethylmethacrylate), PET(polyethylene terephthalate), PDMS(dimethyl silicone polymer) in one, under concrete condition, the organic polymer material of appropriate index can be selected as parent dielectric material according to device substrate.Scattering medium is: BaSO 4, SiO 2, the inorganic material such as ZnO, the one in polysiloxane organic material; Its shape can be spherical, spheroid shape or indefinite form; Its particle size can be 0.5 μm ~ 10 μm, preferably 1 μm ~ 2 μm; The concentration of scattering medium can be 0.1wt% ~ 2wt%, preferred 0.5wt% ~ 1.5wt%, and concrete optimal concentration is relevant with fertile material and scattering medium.The textured interface of the non-flat forms in blast scattering film can be but be not limited to: periodically micro-sphere structure, periodic pyramid structure, or other periodicity or acyclic microstructures, and the microstructure size of non-flat forms, can be 0.5 ~ 10 μm.
The preparation method of a kind of novel blast scattering film of the present invention, is characterized in that having following steps:
A. by polymer matrix medium and scattering medium (0.1wt% ~ 2wt%) mixing according to a certain percentage, be dissolved in and can dissolve in the solvent of parent completely; As PVA parent can select deionized water to be solvent; PMMA can select chlorobenzene to be solvent; Preparing concentration is 10%-30wt%) mixed solution; If polymer matrix is liquid as PDMS, can directly be mixed with liquid parent medium by scattering medium, the massfraction of scattering medium is 0.1wt% ~ 2wt%;
B. the preparation of textured interface: texture interface can be obtained by methods such as photoetching, impression, transfer printings.If use stamped method, above-mentioned mixed solution is spin-coated in flat substrate, uses die marks to obtain texture interface; If use transfer printing, above-mentioned mixed solution is spin-coated on mould, obtains the interface of veining; If use photoetching process, above-mentioned mixed solution is spin-coated on after in flat substrate, prepares figure by photoetching technique on its surface, the film of veining can be obtained equally;
C. the acquisition of brightness enhancement film: the film being separated its surface from aforesaid substrate, namely obtains the brightness enhancement film with textured interface.
Accompanying drawing explanation
Fig. 1 be blast scattering film of the present invention structural representation wherein (1) be parent medium; (2) be scattering medium; (3) be the textured interface of non-flat forms.
Fig. 2 is the structural representation of the device A in the embodiment of the present invention one, comprises ITO (indium tin oxide) anode, each organic function layer, Al negative electrode and blast scattering film.
Fig. 3 is the current density-luminance graph of device A in the embodiment of the present invention one and comparative device B.
Fig. 4 is the normalized brightness-angular relationship figure of device A in the embodiment of the present invention one and comparative device B.
Embodiment
Provide embodiments of the invention below in conjunction with accompanying drawing to describe in detail.
Embodiment one,
Preparation is fertile material with PVA, and polysiloxane is scattering medium, the blast scattering film at micro-pyramid structure interface.The concrete steps of this example are as follows:
(1) potpourri of polysiloxane microballoon and PVA being dissolved into (wherein polysiloxane accounts for the massfraction of PVA than being 1wt%) in aqueous solution, obtaining the PVA aqueous solution that concentration is 20wt%.
(2) adopt P-type silicon sheet to be substrate, the method for being corroded by chemical bases corrodes monocrystalline silicon piece in the mixed solution of NaOH and IPA (isopropyl alcohol) of 80 DEG C, prepares pyramid matte.
(3) then the above-mentioned PVA solution prepared is spun on silicon wafer substrate pyramid matte, rotating speed is 800 revs/min, time is 70 seconds, then the silicon chip of PVA solution spin coating is had to be put into drying in oven, take out after drying and take off film, so obtain that there is the blast scattering film being inverted micro-pyramid structure interface by transfer printing.
Embodiment two:
Preparing with PMMA is fertile material, SiO 2microballoon is scattering medium, periodically the blast scattering film at hemispherical array interface.The concrete steps of the present embodiment are as follows:
(1) be the SiO of 0.8wt% by massfraction 2after the mixing of microballoon (mean diameter 1-2 μm) and PMMA, be dissolved into completely in chlorobenzene under 80 DEG C of water-baths, obtain the chlorobenzene solution that PMMA concentration is 20%, use magnetic stirring apparatus to be stirred by solution.
(2) be spun to by above-mentioned solution in smooth glass substrate (i.e. substrate), rotating speed is 800 revs/min.Then heating, drying solvent, heats and reaches the glass temperature of PMMA, and make PMMA surface form one deck hemisphere interface by stamped method on the mould of periodicity hemispherical array, the pressure in moulding process is approximately 5MPa, and the impression retention time is 200s.
(3), after peel of mould and substrate (i.e. glass substrate), obtain taking PMMA as fertile material, SiO 2microballoon is scattering medium, periodically the blast scattering film at hemispherical array interface.
Embodiment three
Preparation is parent with PDMS, and ZnO microsphere is scattering medium, periodically the blast scattering film at convex hemispherical array interface.The concrete steps of this example are as follows: be that ZnO microsphere (the diameter 1-2 μm) ultrasonic disperse of 1wt% is in PDMS liquid by massfraction, the PDMS liquid of mixing is poured into the mould of periodically recessed micro-hemisphere, add hardening agent, PDMS is solidified, after peel of mould, obtain taking PDMS as parent, ZnO microsphere is scattering medium, periodically the blast scattering film at convex hemispherical array interface.
About application and the performance test of blast scattering film of the present invention
The application of brightness enhancement film of the present invention on OLED (organic electroluminescence device) and performance test:
Be used in OLED by the blast scattering film obtained in embodiment one, tester is to the effect of OLED.
Two panels glass substrate manufactures two identical OLED of structure, and device A sticks the device of the PVA blast scattering film prepared, and device B is comparative device, is only common OLED, and the structural representation of device A as shown in Figure 1.
Fig. 3 is the current density-luminance graph of device A comparative device B, can find out under same current density, and the brightness of the brightness ratio device B of device A is significantly improved.Fig. 3 is the normalized brightness-angular relationship figure of device A comparative device B, can find out, wider than device B of the visual angle of device A.
The application of blast scattering film on LED and performance test in embodiment two and embodiment three:
By two kinds of blast scattering films obtained in example two and example three, paste on commercially available LED light source by optical cement, test obtains the brightness of device respectively under 4V, 4.5V, 5V, 5.5V as following table:
Table 1. is with or without the illuminometer of LED component during blast scattering film
4V 4.5V 5V 5.5V
Non-pad pasting LED 4213 cd/m 2 6524 cd/m 2 9134 cd/m 2 13235 cd/m 2
Paste the LED of PMMA film 5688 cd/m 2 8800 cd/m 2 12413 cd/m 2 17655 cd/m 2
Paste the LED of PDMS film 5104 cd/m 2 8155 cd/m 2 11232 cd/m 2 16411 cd/m 2
By embodiment, novel blast scattering film disclosed by the invention can be found out, device efficiency can be improved simultaneously and improve device visual angle, being with a wide range of applications.

Claims (2)

1. a novel blast scattering film, is characterized in that: it is by polymer matrix medium (1), textured interface (3) composition of the scattering medium (2) in embedding parent and non-flat forms; Wherein said polymer matrix dielectric material is: PVA(polyvinyl alcohol (PVA)), PMMA(polymethylmethacrylate), PET(polyethylene terephthalate), PDMS(dimethyl silicone polymer) in any one, under concrete condition, the organic polymer material of appropriate index can be selected as parent dielectric material according to device substrate; Scattering medium is: BaSO 4, SiO 2, the inorganic material such as ZnO, or any one in polysiloxane organic material; Its shape can be spherical, spheroid shape or indefinite form; Its particle size can be 0.5 ~ 10 μm, preferably 1 μm ~ 2 μm; The concentration of scattering medium can be 0.1wt% ~ 2wt%, preferred 0.5wt% ~ 1.5wt%, and concrete optimal concentration is relevant with fertile material and scattering medium; The textured interface of the non-flat forms in blast scattering film can be: periodically micro-sphere structure, periodic pyramid structure, or other one periodically or in acyclic microstructure, and the microstructure size of non-flat forms, can be 0.5 ~ 10 μm.
2. a preparation method for novel blast scattering film, is characterized in that having following steps:
A. the preparation of mixed solution: by polymer matrix medium and scattering medium (0.1wt% ~ 2wt%) mixing according to a certain percentage, be dissolved in and can dissolve in the solvent of parent completely, as PVA parent can select deionized water to be solvent, PMMA can select chlorobenzene to be solvent, and preparing concentration is 10%-30wt%(massfraction) mixed solution; If polymer matrix is liquid (PDMS), can directly be mixed with liquid parent medium by scattering medium, the massfraction of scattering medium is 0.1wt% ~ 2wt%;
B. the preparation of textured interface: texture interface can be obtained by methods such as photoetching, impression, transfer printings; If use stamped method, above-mentioned mixed solution is spin-coated in flat substrate, uses die marks to obtain texture interface; If use transfer printing, above-mentioned mixed solution is spin-coated on mould, obtains the interface of veining; If use photoetching process, above-mentioned mixed solution is spin-coated on after in flat substrate, prepares figure by photoetching technique on its surface, the film of veining can be obtained equally;
C. the acquisition of brightness enhancement film: the film being separated its surface from aforesaid substrate, namely obtains the brightness enhancement film with textured interface.
CN201410568630.9A 2014-10-22 2014-10-22 Novel brightness-enhancing scattering film Pending CN104330842A (en)

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CN106098963A (en) * 2016-07-28 2016-11-09 上海大学 There is optical thin film of random pyramid pattern matte and preparation method thereof
CN106098742A (en) * 2016-08-18 2016-11-09 信利（惠州）智能显示有限公司 Organic light-emitting display device and manufacture method
CN111566061A (en) * 2016-11-30 2020-08-21 康宁公司 Textured glass with enhanced light extraction for OLED illumination

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CN111566061A (en) * 2016-11-30 2020-08-21 康宁公司 Textured glass with enhanced light extraction for OLED illumination
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Application publication date: 20150204