CN104328501B - TiAl single crystal alloy with fully controllable lamellar orientation and preparation method thereof - Google Patents
TiAl single crystal alloy with fully controllable lamellar orientation and preparation method thereof Download PDFInfo
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- CN104328501B CN104328501B CN201410528019.3A CN201410528019A CN104328501B CN 104328501 B CN104328501 B CN 104328501B CN 201410528019 A CN201410528019 A CN 201410528019A CN 104328501 B CN104328501 B CN 104328501B
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- 239000000956 alloy Substances 0.000 title claims abstract description 51
- 229910010038 TiAl Inorganic materials 0.000 title claims abstract description 50
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000013078 crystal Substances 0.000 title abstract description 25
- 238000007711 solidification Methods 0.000 claims abstract description 62
- 230000008023 solidification Effects 0.000 claims abstract description 62
- 230000012010 growth Effects 0.000 claims abstract description 41
- 229910000765 intermetallic Inorganic materials 0.000 claims abstract description 15
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 10
- 239000010431 corundum Substances 0.000 claims abstract description 10
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 238000005275 alloying Methods 0.000 claims description 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 238000010791 quenching Methods 0.000 claims description 12
- 230000000171 quenching effect Effects 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 230000001939 inductive effect Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000005339 levitation Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 38
- 230000008569 process Effects 0.000 abstract description 15
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000007790 solid phase Substances 0.000 abstract description 4
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000005266 casting Methods 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 238000003723 Smelting Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 230000005674 electromagnetic induction Effects 0.000 abstract 1
- 239000000725 suspension Substances 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 44
- 238000009413 insulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000008520 organization Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 241000446313 Lamella Species 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 241001076960 Argon Species 0.000 description 2
- 235000013876 argon Nutrition 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 210000001787 dendrite Anatomy 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910004349 Ti-Al Inorganic materials 0.000 description 1
- 229910004692 Ti—Al Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007646 directional migration Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000037230 mobility Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000601 superalloy Inorganic materials 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/52—Alloys
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a TiAl intermetallic compound single crystal with completely controllable lamellar orientation and a preparation method thereof. The expression of the composition of the TiAl alloy material is TiaAlbNbc(atomic percent), wherein a is more than or equal to 42 and less than or equal to 55, b is more than or equal to 43 and less than or equal to 49, c is more than or equal to 2 and less than or equal to 9, and a + b + c = 100. The preparation method of the TiAl alloy single crystal with controllable lamellar orientation comprises the following steps: electromagnetic induction suspension smelting of a TiAl alloy master alloy ingot in a water-cooled copper crucible, and casting into a directional solidification bar through suction casting; putting the test bar into a high-purity corundum crucible with the inner wall sintered with a high-purity yttrium oxide coating for Bridgman directional solidification; the solid phase transformation process is controlled by changing the solidification parameters, so that the orientation of the single crystal wafer layer is completely controllable, andand obtaining the TiAl intermetallic compound single crystal with the lamellar orientation parallel to the growth direction.
Description
Technical field
The invention belongs to inter-metallic compound material technical field, and in particular to a kind of fully controllable TiAl of lamellar orientation
Single crystal alloy and preparation method thereof.
Background technology
TiAl intermetallic compound is a kind of novel light high-temperature structural material, and its proportion is less than nickel base superalloy
50%, there is height than strong, Gao Bigang, anti-corrosion, wear-resisting, high temperature resistant and excellent inoxidizability and creep resistant, it is to replace
For the ideal material of Ni based high-temperature alloys.
The mechanical property of complete lamellar structure TiAl alloy has close relationship with its lamellar orientation.By to single
The research of the full sheet many twin crystal PST (Polysynthetic twinned crystal) of layer of orientation, finds its intensity with modeling
Property shows obvious anisotropy.Due to this anisotropy of complete lamellar structure, when lamellar orientation is suitable, make it more suitable
Together in blade of aviation engine so some require high temperature resistant, and only by the service condition of one-dimensional square load.If can be by
TiAl alloy produces the engine blade of complete lamellar structure using the method for directional solidification, and it is parallel to be orientated its lamellar structure
It is undoubtedly extremely beneficial in the axial direction (direction of growth of crystal in directional solidification) of blade.Yamaguchi et al. system researches
Influence of the TiAl alloy lamellar orientation to mechanical property, finds when loading direction is parallel with lamellar orientation, yield strength with
Elongation percentage reaches best of breed.Therefore, the performance of TiAl alloy is further improved, just must be to the lamella of final tissue
Orientation is controlled, the TiAl intermetallic compound monocrystalline complete lamellar structure consistent with loading direction to obtain orientation.
At present, the control method of domestic and international TiAl alloy lamellar orientation mainly includes seed-grain method and changes the non-of solidification path
Seed-grain method.Yamaguchi, Johnson et al. solidify seed-grain method by α phases, from Ti-Al-Si systems alloy as seed crystal, pass through
Necking down crystal separation method has obtained the monocrystalline PST that lamellar orientation is completely parallel to the direction of growth.Seed crystal composition generally with foundry alloy composition
Having differences causes the composition of directional solidificating alloy and performance uneven, and the preparation technology of seed crystal is complicated.Therefore, seed-grain method
With clearly disadvantageous.
In non-seed-grain method, do not study both at home and abroad obtain the full sheet layer TiAl single crystal organization parallel with the direction of growth at present.
Lin Junpin etc. uses " from seed-grain method " (double directional under the conditions of relatively low G/V to Ti-46Al-5Nb alloys
Solidification method) has obtained the full sheet layer single crystal organization parallel with the direction of growth.They think, relatively low G/V
Technique makes β phases interdendritic away under suitable conditions, can obtain parallel with the direction of growth single take by full peritectic reaction
To α phases, the α variants of different position phases are generated without there is solid-state phase changes β → α, so as to complete the control to lamellar orientation.This
The method of kind needs to carry out the directional solidification of same process twice, the relatively common many process of setting of non-seed-grain method, has aggravated crucible
Pollution of the material to alloy, the industrialization to directional solidification TiAl alloy is unfavorable.
Research both at home and abroad on non-seed-grain method control lamellar orientation before is change solidification path, it is impossible to control monocrystalline
Lamellar orientation, and do not obtain the monocrystalline lamellar structure being substantially parallel with the direction of growth.To solve this technical barrier, TiAl is closed
Golden solid-state orientation phase transition process turns into the key of control lamellar orientation.From phasor, after the solidification of complete lamellar structure TiAl alloy
β → α and α → α must also be experienced2The solid-state phase changes of+γ.When primary phase is β phases, selecting excellence evaluation is<001>, its correlation
It is to be：{110}β//{0001}α//{111}γ [25], and { 110 }β12 variables in 4 parallel to the direction of growth, 8 with it is raw
Length direction inclines at 45 °[16,26], only 1/3 habit plane is oriented parallel in the lamellar structure formed after experience solid-state phase changes
The direction of growth.Obviously, the orientation of the final lamellar structure of TiAl alloy, depends not only on the direction of growth of nascent β phases, additionally depends on
Solid-state phase changes process afterwards.So, β → α solid-state phase changes processes are also the key for controlling lamellar orientation.And so far on
The research of TiAl lamellar orientations control, is focused on process of setting, and ignores the solid-state phase changes process after solidification.
Therefore, process of setting is not only controlled, makes directional solidification primary phase for β phases, and to control TiAl alloy to orient
During solid-state phase changes the forming core of cenotype grow up, phase boundary directional migration process, make its orient solid-state phase changes in only remain
With the direction of growth in 0 ° of lamellar orientation, complete under the conditions of continuously-directional liquid-solid-phase changeable-solid-state phase changes to TiAl alloy lamella
The control of orientation.
The content of the invention
The purpose of the present invention is by controlling continuously-directional liquid-solid-phase changeable-solid-state phase changes process, there is provided a kind of lamellar orientation
Fully controllable TiAl intermetallic compound monocrystalline and preparation method thereof.
A kind of fully controllable TiAl intermetallic compound monocrystalline of lamellar orientation, with atomic percentage, its alloying component
Expression formula is TiaAlbNbc, wherein, 42≤a≤55,43≤b≤49,2≤c≤9, a+b+c=100.
The preparation of the fully controllable TiAl intermetallic compound monocrystalline of above-mentioned lamellar orientation, comprises the following specific steps that：
The first step：Ti, Al, Nb simple metal raw material that purity is 99.999% are chosen, is matched somebody with somebody according to alloying component
Than being less than 10 in vacuum-3Master alloy melting in the cold crucible levitation melting stove of Pa, makes alloying component uniform through 3~4 meltings
Change, and directional solidification bar is cast in suction；
Second step：TiAl alloy coupon is put into solidification is oriented in the corundum crucible of high-purity yttrium oxide coating, take out true
It is empty to 5 × 10-3Pa, then protect gas to high-purity argon is filled with system；
3rd step：Regulation inductive source power is heated to sample, and holding temperature is 1450~1650K, soaking time
It is 15~30min, starts directional solidification, it is 5~20 μm/s to control directional solidification withdrawing rate；Continued propagation is to specimen length
At 50mm, starting fast quenching carries out rapid quenching to directional solidification sample, retains solid liquid interface.
Directional solidification diameter of rod is Φ (4~6mm) × 100mm in the first step.
The corundum crucible size of high-purity yttrium oxide coating is Φ (7~9mm) × 100mm in second step；High-purity argon protects gas
Charge is 0.04~0.06MPa.
Principle of the invention：TiAl alloy lamellar orientation is controlled using Bridgman directional freeze methods, it is solidifying by changing
Gu parameter thermograde and growth rate, ensure that primary phase is full β phases first, eliminated secondly by crystal grain competition in process of setting
Monocrystalline is obtained, and there is a critical-temperature specific withdrawing rate of correspondence in process of setting, under this withdrawing rate most
α phase of the whole lamellar orientation with the direction of growth for 45 ° is eliminated by phase boundary migration, makes the 12 α variables obtained in β → α phase transformations
In only retain the final lamellar orientation α phase parallel with the direction of growth, so as to complete the control to lamellar orientation.
The present invention compared with prior art, has the following advantages that：1. common Bridgman directional freeze methods are used, is led to
Overregulate solidification parameter, control continuously-directional liquid-solid-phase changeable-orientation solid-state phase changes, it is ensured that beta-phase growth and by solid-state entirely
Phase transformation controls final lamellar orientation, and obtains the TiAl alloy single crystal organization that lamellar orientation is completely parallel to the direction of growth.
2. present invention effectively prevents the shortcoming that seed-grain method composition performance is uneven, while in single directional solidification process
Just the single crystal organization of preferable lamellar orientation has been obtained, technique has been simplified.
3. the present invention can completely control its list during TiAl alloy monocrystalline is prepared under certain limit solidification parameter
Wafer layer is orientated.The present invention provides theoretical foundation for the industrial applications of directional solidification TiAl alloy.
Brief description of the drawings
Fig. 1 is prior art part Ti-Al binary alloy phase diagrams.
Fig. 2 is the micro-organization chart of directional solidification sample of the present invention maximum longitudinal section (a) and lamellar orientation (b).
Fig. 3 is directional solidification sample of the present invention competition section longitudinal section micro-organization chart.
Fig. 4 is the micro-organization chart of directional solidification sample of the present invention maximum longitudinal section (a) and lamellar orientation (b).
Fig. 5 is directional solidification sample of the present invention competition section longitudinal section micro-organization chart.
Fig. 6 is the micro-organization chart of directional solidification sample of the present invention maximum longitudinal section (a) and lamellar orientation (b).
Fig. 7 is directional solidification sample of the present invention quenching solid liquid interface.
Note：The microscopic structure direction of growth is for from right to left in accompanying drawing 2-7.
Specific embodiment
Fully controllable TiAl intermetallic compound monocrystalline of a kind of lamellar orientation of the present invention and preparation method thereof, its specific reality
Apply mode as follows：
(1) selection primary phase is the Ti-Al-Nb ternary alloy three-partalloys of full β phases.According to multicomponent alloy phasor and phase choosing principles,
Such as Fig. 1, by adjusting the proportion relation between atomic component, make its first all β phase of precipitated phase.Specifically, improve Nb's
Content, reduces the relative scale of Al, forms β phase regions wider.
(2) according to 1) obtained by alloying component, configured using high pure metal constituent element, and under high-purity Ar gas shielded, adopt
Foundry alloy is founded with cold crucible electromagnetic levitation-melt equipment.The multiple melting of foundry alloy obtains uniform master alloy ingot, and suction is cast
Foundry alloy bar.
(3) TiAl alloy bar is inserted into the corundum crucible that inwall sinters high-purity yttrium oxide coating, corundum crucible size is
Φ (5~8mm) × 100mm, is put into Bridgman directional solidification furnaces, when suction puts 5 × 10-3Pa, it is filled with 0.04~
0.06MPa high-purity argons protect gas.
(4) regulation inductive source power is heated to sample, and holding temperature is 1450~1650K, and soaking time is 15
~30min, starts directional solidification, and it is 5~20 μm/s to control directional solidification growth speed；
(5) at given pace continued propagation to specimen length 50mm, start fast quenching carries out fast quenching to directional solidification sample
Treatment, retains solid liquid interface.
With reference to specific embodiment, the invention will be further described.
Embodiment 1
Experiment alloying component used is Ti47Al45Nb8(atomic percent at%), its metal constituent element purity is
99.999%, under high-purity Ar gas shielded, founded using cold crucible electromagnetic levitation-melt equipment in the case where vacuum is 5 × 10-3Pa
Foundry alloy.Uniform master alloy ingot is obtained through 4 meltings, and Φ 4 × 100mm foundry alloy bars are cast in suction.TiAl alloy is tried
Rod is put into during inwall scribbles the corundum crucible of high-purity yttrium oxide and is oriented solidification experiments, is evacuated to 5 × 10-3Pa, then to being
0.05MPa high-purity argons protection gas is filled with system., adjusting inductive source power and sample is heated, holding temperature is 1550K,
Soaking time is 25min, starts directional solidification, and it is 5 μm/s to control directional solidification growth speed；When pull length to specimen length
At 50mm, starting fast quenching carries out rapid quenching to sample, retains solid liquid interface.Maximum longitudinal section to the cylinder sample shows
Micro-assembly robot is characterized, and is observed the elder generation of the solidification under withdrawing rate precipitated phase, grain size and lamellar orientation and is analyzed, such as Fig. 2
A shown in () and Fig. 2 (b), discovery obtains TiAl alloy monocrystalline of the lamellar orientation parallel to the direction of growth.It is 5 μ that growth rate is smaller
During m/s, the enrichment of solute can fully be spread, and growth can stablize to be carried out, and crystal grain has the sufficient time to grow up, so gained is brilliant
Grain is more thick until obtaining crystal growth.
Directional solidification competition section microscopic structure when Fig. 3 is 5 μm/s.Due in β → α solid-state phase changes, due to formed 0 ° and
The mismatch at 45 ° of lamellas, two kinds of interfaces is different, causes the difference of different phase boundary mobilities, so one has critical pull speed
5 μm/s of rate, below this withdrawing rate, formed 0 ° with 45 ° of α grain nucleations of lamellar orientation after 0 ° of grain growth driving force compared with
Greatly, 45 ° of crystal grain are finally eliminated, monocrystalline of the lamellar orientation parallel to the direction of growth is obtained.
Embodiment 2
Using alloying component and method in the same manner as in Example 1, holding temperature is 1550K, and soaking time is 25min,
Start directional solidification, it is 15 μm/s to control directional solidification growth speed；As shown in Fig. 4 (a) and Fig. 4 (b), under this withdrawing rate
What β → α solid-state phase changes were retained is 45 ° of α phases of lamellar orientation, so being finally organized as the monocrystalline that lamellar orientation is 45 °.
Directional solidification competition section microscopic structure when Fig. 5 is 15 μm/s.In this withdrawing rate, 45 ° of crystal grain solid-state phase deformations
Core driving force is more than 0 ° of crystal grain, so that 0 ° of crystal grain can not grow, obtains the TiAl alloy list that lamellar orientation and the direction of growth are in 45 °
It is brilliant.
Embodiment 3
Using alloying component and method in the same manner as in Example 1, holding temperature is 1550K, and soaking time is 25min,
Start directional solidification, it is 20 μm/s to control directional solidification growth speed；As shown in Fig. 6 (a) and Fig. 6 (b), obtain lamellar orientation with
The direction of growth is in 45 ° of monocrystalline.
Fig. 7 is the solid liquid interface that rapid quenching retains, and its dendritic growth pattern is in 4 weight symmetries, with significantly secondary
Dendrite and it is dry with dendrite be in 90 ° of vertical relations, can be inferred that in directional solidification process, the β phases of cubic system are just
Raw phase.
Embodiment 4
Using method same as Example 1, alloying component used is Ti55Al43Nb2, holding temperature is 1650K, insulation
Time is 30min, and directional solidification growth speed is 5 μm/s, obtains the TiAl alloy list parallel to the direction of growth with lamellar orientation
It is brilliant.
Embodiment 5
Using method same as Example 1, alloying component used is Ti48Al43Nb9, holding temperature is 1450K, insulation
Time is 30min, and directional solidification growth speed is 10 μm/s, obtains the TiAl alloy list that lamellar orientation and the direction of growth are in 45 °
It is brilliant.
Embodiment 6
Using method same as Example 1, alloying component used is Ti51Al45Nb6, holding temperature is 1650K, insulation
Time is 15min, and directional solidification growth speed is 5 μm/s, obtains the TiAl alloy list parallel to the direction of growth with lamellar orientation
It is brilliant.
Embodiment 7
Using method same as Example 1, alloying component used is Ti42Al49Nb9, holding temperature is 1550K, insulation
Time is 25min, and directional solidification growth speed is 5 μm/s, obtains the TiAl alloy list parallel to the direction of growth with lamellar orientation
It is brilliant.
Claims (6)
1. the fully controllable TiAl intermetallic compound monocrystalline of a kind of lamellar orientation, it is characterised in that with atomic percentage, its
Alloying component expression formula is TiaAlbNbc, wherein, 42≤a≤55,43≤b≤49,2≤c≤9, a+b+c=100, wherein, by with
It is prepared by lower step：
The first step：Ti, Al, Nb simple metal raw material that purity is 99.999% are chosen, is matched according to alloying component,
Vacuum is less than 10-3Master alloy melting in the cold crucible levitation melting stove of Pa, alloying component is homogenized through 3 ~ 4 meltings, and
Directional solidification bar is cast in suction；
Second step：TiAl alloy coupon is put into solidification is oriented in the corundum crucible of high-purity yttrium oxide coating, be evacuated to 5
×10-3Pa, then protect gas to high-purity argon is filled with system；
3rd step：Regulation inductive source power sample is heated, holding temperature be 1450 ~ 1650K, soaking time be 15 ~
30min, starts directional solidification, when controlling directional solidification withdrawing rate for 15 μm/s, at continued propagation to specimen length 50mm, opens
Dynamic fast quenching carries out rapid quenching to directional solidification sample, retains solid liquid interface, obtains lamellar orientation with the direction of growth in 45 °
TiAl alloy monocrystalline；When directional solidification withdrawing rate is controlled for 20 μm/s, the list that lamellar orientation and the direction of growth are in 45 ° is obtained
It is brilliant.
2. the fully controllable TiAl intermetallic compound monocrystalline of lamellar orientation as claimed in claim 1, it is characterised in that first
Directional solidification diameter of rod is Φ in step（4~6mm）×100mm.
3. the fully controllable TiAl intermetallic compound monocrystalline of lamellar orientation as claimed in claim 1, it is characterised in that second
The corundum crucible size of high-purity yttrium oxide coating is Φ in step（7~9mm）×100mm；High-purity argon protection gas charge is 0.04 ~
0.06MPa。
4. the preparation method of the fully controllable TiAl intermetallic compound monocrystalline of a kind of lamellar orientation as claimed in claim 1,
It is characterised in that it includes following specific steps：
The first step：Ti, Al, Nb simple metal raw material that purity is 99.999% are chosen, is matched according to alloying component,
Vacuum is less than 10-3Master alloy melting in the cold crucible levitation melting stove of Pa, alloying component is homogenized through 3 ~ 4 meltings, and
Directional solidification bar is cast in suction；
Second step：TiAl alloy coupon is put into solidification is oriented in the corundum crucible of high-purity yttrium oxide coating, be evacuated to 5
×10-3Pa, then protect gas to high-purity argon is filled with system；
3rd step：Regulation inductive source power sample is heated, holding temperature be 1450 ~ 1650K, soaking time be 15 ~
30min, starts directional solidification, when controlling directional solidification withdrawing rate for 15 μm/s, at continued propagation to specimen length 50mm, opens
Dynamic fast quenching carries out rapid quenching to directional solidification sample, retains solid liquid interface, obtains lamellar orientation with the direction of growth in 45 °
TiAl alloy monocrystalline；When directional solidification withdrawing rate is controlled for 20 μm/s, the list that lamellar orientation and the direction of growth are in 45 ° is obtained
It is brilliant.
5. the preparation method of the fully controllable TiAl intermetallic compound monocrystalline of lamellar orientation as claimed in claim 4, it is special
Levy and be, directional solidification diameter of rod is Φ in the first step（4~6mm）×100mm.
6. the preparation method of the fully controllable TiAl intermetallic compound monocrystalline of lamellar orientation as claimed in claim 4, it is special
Levy and be, the corundum crucible size of high-purity yttrium oxide coating is Φ in second step（7~9mm）×100mm；High-purity argon protection gas fills
Enter amount for 0.04 ~ 0.06MPa.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410528019.3A CN104328501B (en) | 2014-10-09 | 2014-10-09 | TiAl single crystal alloy with fully controllable lamellar orientation and preparation method thereof |
| US15/517,165 US10570531B2 (en) | 2014-10-09 | 2015-10-09 | TiAl intermetallic compound single crystal material and preparation method therefor |
| PCT/CN2015/091508 WO2016055013A1 (en) | 2014-10-09 | 2015-10-09 | Tial intermetallic compound single crystal material and preparation method therefor |
| JP2017538285A JP6944874B2 (en) | 2014-10-09 | 2015-10-09 | Single crystal material of TiAl intermetallic compound and its manufacturing method |
| EP15849516.8A EP3205753B1 (en) | 2014-10-09 | 2015-10-09 | Preparation method for a tial intermetallic compound single crystal material |
| RU2017115945A RU2701438C2 (en) | 2014-10-09 | 2015-10-09 | Monocrystalline material of intermetallic compound of titanium and aluminium and methods for production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410528019.3A CN104328501B (en) | 2014-10-09 | 2014-10-09 | TiAl single crystal alloy with fully controllable lamellar orientation and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN104328501A CN104328501A (en) | 2015-02-04 |
| CN104328501B true CN104328501B (en) | 2017-06-27 |
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| RU2701438C2 (en) * | 2014-10-09 | 2019-09-26 | Наньцзин Юниверсити Оф Сайенс Энд Текнолоджи | Monocrystalline material of intermetallic compound of titanium and aluminium and methods for production thereof |
| CN104878444A (en) * | 2015-05-13 | 2015-09-02 | 南京理工大学 | Preparation method of TiAl-base alloy monocrystal |
| FR3036640B1 (en) * | 2015-05-26 | 2017-05-12 | Snecma | METHOD FOR MANUFACTURING A TURBOMACHINE TANK |
| CN105603533A (en) * | 2015-12-17 | 2016-05-25 | 中国矿业大学 | Alloy design method for reducing directionally-solidified titanium aluminum alloy interface reaction |
| CN107354344A (en) * | 2017-07-14 | 2017-11-17 | 哈尔滨工业大学 | A kind of β is single-phase to solidify TiAl-base alloy and its organizational controls method |
| CN109226667B (en) * | 2018-11-16 | 2020-07-31 | 哈尔滨工业大学 | Directional solidification method of electromagnetic cold crucible composite ceramic casting mold |
| CN113122756B (en) * | 2021-04-20 | 2022-03-22 | 西北工业大学 | Titanium-aluminum alloy with multistage twin crystal staggered structure and preparation method thereof |
| CN114951522B (en) * | 2022-06-28 | 2023-08-11 | 中南大学 | Isothermal forging method of monocrystalline TiAl |
| CN117451476A (en) * | 2023-10-13 | 2024-01-26 | 哈尔滨工业大学 | Multi-target comprehensive assessment method for directional growth capability of TiAl-based alloy based on variable-section test piece |
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