CN104316498B - A kind of Terahertz sensor of surface plasma body resonant vibration - Google Patents
A kind of Terahertz sensor of surface plasma body resonant vibration Download PDFInfo
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- CN104316498B CN104316498B CN201410637244.0A CN201410637244A CN104316498B CN 104316498 B CN104316498 B CN 104316498B CN 201410637244 A CN201410637244 A CN 201410637244A CN 104316498 B CN104316498 B CN 104316498B
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- terahertz
- surface plasma
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- doped semiconductor
- resonant vibration
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Abstract
The present invention provides a kind of Terahertz sensor of surface plasma body resonant vibration, and the Terahertz sensor at least includes：Heavily-doped semiconductor film, including first surface and the second surface relative with the first surface；Optical waveguide coupled layer, is formed at the first surface of the heavily-doped semiconductor film；Vane, is formed at the second surface of the heavily-doped semiconductor film, and the vane is placed in sample channel, contacted with testing molecule；Terahertz quantum cascaded laser, transmitting terahertz light to the optical waveguide coupled layer；Terahertz detector, detects terahertz light.The laser of the present invention produces thz laser and produces total reflection in optical waveguide coupled layer and heavily-doped semiconductor film surface, evanescent waves are produced at interface, simultaneously produce surface plasma wave between heavily-doped semiconductor film and molecule sensitive membrane, by adjust incident light to resonance angle may be such that evanescent waves and surface plasma wave formation resonate.The sensor can realize detection of the large biological molecule in Terahertz resonance band.
Description
Technical field
The present invention relates to sensor technical field, be related to a kind of Terahertz sensor, more particularly to a kind of surface etc. from
The Terahertz sensor of daughter resonance.
Background technology
Terahertz wave band is the infrared wave band between microwave, not being fairly well-developed on frequency spectrum in, is referred to as
" Terahertz space ".It has great in terms of physics, material science, life science, astronomy, information and science and techniques of defence
Scientific meaning and application prospect.Due to the Important Academic meaning and application value of terahertz wave band, Terahertz thing in recent years
Reason, device and application have turned into one of most popular research frontier in the world.
Applications of surface plasmon resonance be grow up nineteen nineties, it is a kind of can sensitive measurement testee
The technology of dielectric function change.The technology has a very wide range of applications in terms of physics, chemistry and biology, is especially used in
In real time on monitoring interaction of biomacromolecules.Surface plasma resonance biosensor passes through the development of more than 20 years,
Through as a kind of important research tool of life science and pharmaceutical field.
By the research to Terahertz wave spectrum, find many large biological molecules at terahertz wave band existing characteristics peak.And mesh
The preceding Spectrum Analysis to large biological molecule mainly uses terahertz time-domain wave spectrum analyzer.The interaction process of large biological molecule
Analysis needs a kind of Terahertz sensor that can be monitored in real time.
Due to common prism terahertz wave band refractive index than relatively low, while refractive index ratio of the metal in terahertz wave band
It is higher, therefore it is applied to the common prism of existing surface plasma resonance sensor and the total reflection structure of metallic film too
Hertz wave band is not applied to.Again because metal is very big in the dielectric function of terahertz wave band, it is impossible to form effective surface etc.
Gas ions, therefore exist suitable for the metallic film plasma Forming Mechanism of the surface plasma resonance sensor of existing wave band
Terahertz wave band is not applied to yet.
In view of the basic structure of existing surface plasma resonance sensor is in terahertz wave band and does not apply to, the present invention
The total reflection structure of intrinsic semiconductor and heavily-doped semiconductor is proposed, while utilizing the negative dielectric function of heavily-doped semiconductor
The problem of being difficult to form terahertz wave band plasma is solved, is expected to monitor large biological molecule phase in real time so as to propose one kind
The Terahertz sensor of interaction process.
The content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of surface plasma body resonant vibration
Terahertz sensor, for solving what surface plasma resonance sensor of the prior art can not be used in terahertz wave band
Problem.
In order to achieve the above objects and other related objects, the present invention provides a kind of Terahertz of surface plasma body resonant vibration and passed
Sensor, the Terahertz sensor at least includes：
Heavily-doped semiconductor film, including first surface and the second surface relative with the first surface；
Optical waveguide coupled layer, is formed at the first surface of the heavily-doped semiconductor film；
Vane, is formed at the second surface of the heavily-doped semiconductor film, the vane is placed in sample channel,
Contacted with testing molecule；
Terahertz quantum cascaded laser, transmitting terahertz light to the optical waveguide coupled layer；
Terahertz detector, detects the terahertz light from the optical waveguide coupled layer reflection.
It is used as a kind of scheme of optimization of the Terahertz sensor of surface plasma body resonant vibration of the present invention, the Terahertz amount
Qc laser is the laser of lasing fixed frequency, and the scope of lasing frequency is 1.2~4.4THz.
It is used as a kind of scheme of optimization of the Terahertz sensor of surface plasma body resonant vibration of the present invention, the fiber waveguide coupling
Conjunction layer is intrinsic semiconductor, and terahertz light forms total reflection between optical waveguide coupled layer and the heavily-doped semiconductor film.
It is described intrinsic partly to lead as a kind of scheme of optimization of the Terahertz sensor of surface plasma body resonant vibration of the present invention
Body is GaAs.
It is used as a kind of scheme of optimization of the Terahertz sensor of surface plasma body resonant vibration of the present invention, the heavy doping half
Conductor thin film is the GaAs films for mixing Si, and doping concentration is 2*1018~5*1018cm-3。
It is used as a kind of scheme of optimization of the Terahertz sensor of surface plasma body resonant vibration of the present invention, the heavy doping half
The thickness range of conductor thin film is 40~60nm.
As a kind of scheme of optimization of the Terahertz sensor of surface plasma body resonant vibration of the present invention, in the heavy doping
Surface plasma body resonant vibration ripple is produced between semiconductive thin film and vane.
As a kind of scheme of optimization of the Terahertz sensor of surface plasma body resonant vibration of the present invention, the vane is
Molecule sensitive membrane, can be reacted with testing molecule.
As a kind of scheme of optimization of the Terahertz sensor of surface plasma body resonant vibration of the present invention, the Terahertz is visited
Survey device is Si heat-sensitive eyes.
As described above, the Terahertz sensor of the surface plasma body resonant vibration of the present invention, the Terahertz sensor is at least
Including：Heavily-doped semiconductor film, including first surface and the second surface relative with the first surface；It is optical waveguide coupled
Layer, is formed at the first surface of the heavily-doped semiconductor film；Vane, is formed at the of the heavily-doped semiconductor film
Two surfaces, the vane is placed in sample channel, contacted with testing molecule；Terahertz quantum cascaded laser, launches terahertz
Hereby light is to the optical waveguide coupled layer；Terahertz detector, detects the terahertz light from the optical waveguide coupled layer reflection.This hair
Bright thz laser device produces thz laser and produces total reflection in optical waveguide coupled layer and heavily-doped semiconductor film surface,
Evanescent waves are produced at interface, while producing surface plasma between heavily-doped semiconductor film surface and molecule sensitive membrane
Ripple, regulation incident light to resonance angle may be such that evanescent waves and surface plasma wave formation resonance.This sensor can be realized
Detection of the large biological molecule in Terahertz resonance band.
Brief description of the drawings
Fig. 1 is the structural representation of Terahertz sensor of the present invention.
Fig. 2 is the path schematic diagram that THz wave of the present invention is propagated in the sensor.
Component label instructions
1 heavily-doped semiconductor film
2 optical waveguide coupled layers
3 vanes
4 sample channels
5 Terahertz quantum cascaded lasers
6 terahertz detectors
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, then in schema only display with relevant component in the present invention rather than according to component count during actual implement, shape
Shape and size are drawn, and it is actual when implementing kenel, quantity and the ratio of each component can be a kind of random change, and its component cloth
Office's kenel may also be increasingly complex.
The present invention provides a kind of Terahertz sensor of plasma resonance, as shown in figure 1, the Terahertz sensor is extremely
Include less：Heavily-doped semiconductor film 1, optical waveguide coupled layer 2, vane 3, Terahertz quantum cascaded laser 5 and terahertz
Hereby detector 6.
The heavily-doped semiconductor film 1 includes first surface and the second surface relative with the first surface, described
Optical waveguide coupled layer 2 is formed at the first surface of the heavily-doped semiconductor film 1, and the vane 3 is formed at described heavily doped
The second surface of miscellaneous semiconductive thin film 1, is placed in sample channel 4, is contacted with testing molecule, described Terahertz quantum cascaded
Laser 5 is used for launching terahertz light, terahertz light is incident to the optical waveguide coupled layer 2, the terahertz detector 6 is then
For detecting the terahertz light reflected from the optical waveguide coupled layer 2.
The Terahertz quantum cascaded laser 5 is the very effective radiation source of terahertz wave band, different active area knots
The lasing frequency for the laser that structure is obtained is in the range of 1.2~4.4THz, while passing through waveguiding structure and resonance to laser
The surface launching that the angle of departure is less than 20 ° can be achieved in the design of chamber.The present invention has different formants according to monitored macromolecular
Need, the Terahertz quantum cascaded laser of different lasing frequencies can be selected.
The optical waveguide coupled layer 2 can use intrinsic semiconductor, for example, GaAs.Refractions of the GaAs in terahertz wave band
Rate n1 is about 3.5, therefore, regard optical waveguide coupled layer as the optically denser medium being totally reflected.
The selection of heavily-doped semiconductor film 1 and the material of the optical waveguide coupled Lattice Matching of layer 2, if for example, fiber waveguide
Coupling layer 2 uses GaAs, then heavily-doped semiconductor film 1 then can be using GaAs the or Si heavy doping of Si heavy doping
Al0.15Ga0.85As；Certainly, optical waveguide coupled layer 2 can also be other suitable materials, for example, the optical waveguide coupled layer 2 is
InP, then heavily-doped semiconductor film 1 is Si heavy doping InGaAs etc., is not limited herein.
In the present embodiment, the optical waveguide coupled layer 2 uses GaAs, and the heavily-doped semiconductor film 1 is heavily doped using Si
Miscellaneous GaAs.
In the present embodiment, the preparation flow of the heavily-doped semiconductor film 1 is：Using 2 inches of Semi-insulating GaAs substrate,
Grown using molecular beam epitaxy (MBE) or the thick Si heavy doping GaAs of chemical vapor deposition (CVD) technique growth about 50nm are thin
Film layer, doping concentration is 5 × 1018cm-3, it is desirable to film gauge uniformity is good.
It should be noted that as shown in Fig. 2 upper layer of material is intrinsic GaAs, subsurface material is that Si heavily-doped semiconductors are thin
Film layer, θspFor the resonance angle for the laser light incident for realizing plasma resonance, dotted arrow is then represented in heavily-doped semiconductor film 1
The surface plasma body resonant vibration ripple formed with the interface of vane 3.Because Si doping introduces freedom in heavily-doped semiconductor film 1
Electronics, thus it is big with the change of doping concentration, according to Drude model heavily-doped semiconductor thin-film dielectric function of ε2(ω) is：
Wherein, ε0For dielectric constant, ε∞For semiconductor high-frequency dielectric function, ω is angle of incident light frequency, when τ is decay
Between, also known as drude times, about 0.1ps, ωpIt is represented by for plasma oscillation angular frequency：
Wherein, e is electron charge, n3DFor doping density, m*For electron effective mass.In terahertz wave band, heavy doping half
The real part of conductor thin film dielectric function can become negative, so as to the shape between molecule sensitive membrane and heavily-doped semiconductor film
Into plasma wave.Meanwhile, calculate obtained refractive index n2(ω) can also be controlled 1~2 or so, and therefore, heavy doping is partly led
Body thin film is used as the optically thinner medium for being totally reflected structure.Wherein, propagation constant k of the evanescent waves along interfaceχWith surface plasma-wave
Propagation constant β be respectively：
Wherein, c is the light velocity in vacuum, ε1I.e. it is the intrinsic GaAs layers dielectric constant of optical waveguide coupled layer, ε3To divide
The dielectric function of sub- sensitive membrane, θ is refraction angle.Therefore, when realizing the resonance of laser light incident of plasma resonance, resonance angle θsp
For：
By adjusting incident terahertz light to resonance angle, just may be such that surface of evanescent waves intensity enhancing formation resonance etc. from
It will not be totally reflected on daughter ripple, the interface between optical waveguide coupled layer and heavily-doped semiconductor film.
The vane 3 is molecule sensitive membrane, is a kind of molecule with specific recognition attribute, and it is fixed on heavy doping half
The surface of conductor.The molecule sensitive membrane is as part, the resonance absorbing peak with terahertz wave band.By monitoring RESONANCE ABSORPTION
Peak, so that significant difference goes out whether part reacts with the macromolecular to be measured in sample channel, and during monitoring reaction in real time
Between.
Using the TYR in amino acid as part in the present embodiment, heavily-doped semiconductor film 1 is fixed in
Surface.TYR in amino acid has resonance absorbing peak of the absorption coefficient more than 80%, therefore, the present embodiment in 2.06THz
Middle selection lasing frequency for 2.06THz Terahertz quantum cascaded laser as irradiation bomb, if TYR not with sample
Macromolecular in passage reacts, then TYR keeps what is produced in original attribute, such heavily-doped semiconductor film 1
Surface plasma wave can be by TYR RESONANCE ABSORPTION, the disappearance at optical waveguide coupled layer 2 and heavily-doped semiconductor film 1 interface
Ripple can not form effective resonance, at this moment can realize substantially zero-decrement total reflection, may detect in Si heat-sensitive eyes
The THz wave energy of total reflection.And if TYR is destroyed by the macromolecular in sample channel, that is, react, then point
Sub- sensitive membrane can not just absorb the surface plasma wave in heavily-doped semiconductor film 1, surface plasma wave and fiber waveguide
Coupling layer 2 and the evanescent waves at the interface of heavily-doped semiconductor film 1 are formed surface plasma body resonant vibration, optical waveguide coupled layer 2
It is destroyed with the total reflection condition of the interface of heavily-doped semiconductor film 1, attenuated total reflectance phenomenon is presented, makes energy of reflection light anxious
Play declines, and the THz wave energy of total reflection can not be detected in Si heat-sensitive eyes.Therefore, by inventive sensor
Si heat-sensitive eyes can detect total reflection THz wave energy, it is possible to judge whether occur between macromolecular mutually
Effect.
In summary, the present invention provides a kind of Terahertz sensor of surface plasma body resonant vibration, the Terahertz sensing
Device at least includes：Heavily-doped semiconductor film, including first surface and the second surface relative with the first surface；Fiber waveguide
Coupling layer, is formed at the first surface of the heavily-doped semiconductor film；Vane, is formed at the heavily-doped semiconductor film
Second surface, the vane is placed in sample channel, contacted with testing molecule；Terahertz quantum cascaded laser, transmitting
Terahertz light is to the optical waveguide coupled layer；Terahertz detector, detects the terahertz light from the optical waveguide coupled layer reflection.
The thz laser device of the present invention produces thz laser and produced entirely in optical waveguide coupled layer and heavily-doped semiconductor film surface
Reflection, evanescent waves are produced at interface, at the same produced between heavily-doped semiconductor film surface and molecule sensitive membrane surface etc. from
Daughter ripple, regulation incident light to resonance angle may be such that evanescent waves and surface plasma wave formation resonance.This sensor can
Realize detection of the large biological molecule in Terahertz resonance band.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (9)
1. the Terahertz sensor of a kind of surface plasma body resonant vibration, it is characterised in that the Terahertz sensor at least includes：
Heavily-doped semiconductor film, including first surface and the second surface relative with the first surface；
Optical waveguide coupled layer, is formed at the first surface of the heavily-doped semiconductor film；
Vane, is formed at the second surface of the heavily-doped semiconductor film, and the vane is placed in sample channel, with treating
Survey molecule contacts；
Terahertz quantum cascaded laser, transmitting terahertz light to the optical waveguide coupled layer；
Terahertz detector, detects the terahertz light from the optical waveguide coupled layer reflection；
Wherein, when receiving the terahertz light of the Terahertz quantum cascaded laser transmitting, the optical waveguide coupled layer
Surface produces the interface generation evanescent waves of total reflection, the optical waveguide coupled layer and the heavily-doped semiconductor film, described heavy
Surface plasma wave is produced between the surface of doped semiconductor films and the vane；
The Terahertz sensor is suitable to detect the terahertz reflected from the optical waveguide coupled layer by the terahertz detector
It is hereby just no to be totally reflected THz wave energy, to judge whether interacted between the testing molecule；Wherein, it is described
Vane is the molecule sensitive membrane being made up of TYR, and the Terahertz quantum cascaded laser is with 2.06THz lasings
The irradiation bomb of frequency, the terahertz detector is Si heat-sensitive eyes；In the TYR and the sample channel
Testing molecule when not reacting, the TYR absorbs the surface plasma wave, the surface plasma wave
Surface plasma body resonant vibration can not be formed with the evanescent waves, the Si heat-sensitive eyes detect total reflection THz wave energy
Amount；When testing molecule in the TYR and the sample channel reacts, the TYR can not absorb institute
State surface plasma wave, the surface plasma wave and evanescent waves formation surface plasma body resonant vibration, the Si heat
Radiation detector can not detect total reflection THz wave energy.
2. the Terahertz sensor of surface plasma body resonant vibration according to claim 1, it is characterised in that：The Terahertz
QCL is the laser of lasing fixed frequency, and the scope of lasing frequency is 1.2~4.4THz.
3. the Terahertz sensor of surface plasma body resonant vibration according to claim 1, it is characterised in that：The fiber waveguide
Coupling layer is intrinsic semiconductor, and terahertz light is formed between optical waveguide coupled layer and the heavily-doped semiconductor film to be all-trans
Penetrate.
4. the Terahertz sensor of surface plasma body resonant vibration according to claim 3, it is characterised in that：Described intrinsic half
Conductor is GaAs.
5. the Terahertz sensor of surface plasma body resonant vibration according to claim 1, it is characterised in that：The heavy doping
Semiconductive thin film is the GaAs films for mixing Si, and doping concentration is 2 × 1018~5 × 1018cm-3。
6. the Terahertz sensor of surface plasma body resonant vibration according to claim 1, it is characterised in that：The heavy doping
The thickness range of semiconductive thin film is 40~60nm.
7. the Terahertz sensor of surface plasma body resonant vibration according to claim 1, it is characterised in that：Described heavily doped
Surface plasma body resonant vibration ripple is produced between miscellaneous semiconductive thin film and vane.
8. the Terahertz sensor of surface plasma body resonant vibration according to claim 1, it is characterised in that：The vane
For molecule sensitive membrane, it can be reacted with testing molecule.
9. the Terahertz sensor of surface plasma body resonant vibration according to claim 1, it is characterised in that：The Terahertz
Detector is Si heat-sensitive eyes.
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| CN105140277B (en) * | 2015-06-19 | 2018-06-22 | 南京大学 | A kind of Terahertz sensor based on tunneling transistor arrangement |
| CN106442477B (en) * | 2016-11-16 | 2023-07-07 | 福州大学 | Doped graphene buffer layer stack SPR (surface plasmon resonance) sensor system |
| CN109031658B (en) * | 2017-06-12 | 2020-10-02 | 中国科学院大连化学物理研究所 | Thin laser transmission detection window |
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| CN101258400A (en) * | 2005-09-05 | 2008-09-03 | 佳能株式会社 | Sensor device |
| CN103367518A (en) * | 2012-03-31 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | Surface plasmon coupling terahertz quantum well detector |
| CN103715291A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院上海微系统与信息技术研究所 | Terahertz photoelectric detector |
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| GB0510113D0 (en) * | 2005-05-18 | 2005-06-22 | Ct For Integrated Photonics Th | Terahertz waveguide |
| JP2007255948A (en) * | 2006-03-20 | 2007-10-04 | Tokyo Institute Of Technology | Electric field sensor |
| JP5035618B2 (en) * | 2006-12-05 | 2012-09-26 | 独立行政法人理化学研究所 | Detection method and detection apparatus using electromagnetic wave |
| JP4871176B2 (en) * | 2007-03-13 | 2012-02-08 | 浜松ホトニクス株式会社 | Total reflection terahertz wave measuring device |
| US8969804B2 (en) * | 2010-02-15 | 2015-03-03 | Koninklijke Philips N.V. | Device for analyzing a sample using radiation in the terahertz frequency range |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101258400A (en) * | 2005-09-05 | 2008-09-03 | 佳能株式会社 | Sensor device |
| CN103367518A (en) * | 2012-03-31 | 2013-10-23 | 中国科学院上海微系统与信息技术研究所 | Surface plasmon coupling terahertz quantum well detector |
| CN103715291A (en) * | 2013-12-30 | 2014-04-09 | 中国科学院上海微系统与信息技术研究所 | Terahertz photoelectric detector |
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