CN104311102B - A kind of silicon nitride, silicon carbide are in conjunction with the preparation method of lanthanum hexaborane foamed ceramics - Google Patents

A kind of silicon nitride, silicon carbide are in conjunction with the preparation method of lanthanum hexaborane foamed ceramics Download PDF

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Publication number
CN104311102B
CN104311102B CN201410563210.1A CN201410563210A CN104311102B CN 104311102 B CN104311102 B CN 104311102B CN 201410563210 A CN201410563210 A CN 201410563210A CN 104311102 B CN104311102 B CN 104311102B
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conjunction
silicon nitride
silicon carbide
foamed ceramics
silicon
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CN104311102A (en
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唐竹兴
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Shandong University of Technology
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Shandong University of Technology
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Abstract

Silicon nitride, silicon carbide, in conjunction with a preparation method for lanthanum hexaborane foamed ceramics, is characterized in that: by LaB 6, silicon powder, the additional Gonak Homogeneous phase mixing of resol make ceramic size, then ceramic size is immersed in polyurethane foam, in nitrogen atmosphere, is fired into silicon nitride, silicon carbide after drying in conjunction with lanthanum hexaborane foamed ceramics.Silicon nitride prepared by the present invention, silicon carbide are in conjunction with lanthanum hexaborane foamed ceramics uniform microstructure, and intensity is high, and hole size is even, avoid the residual of charcoal and free silica, make its intensity, high temperature resistant, thermal shock resistance is greatly improved.

Description

A kind of silicon nitride, silicon carbide are in conjunction with the preparation method of lanthanum hexaborane foamed ceramics
Technical field
The present invention relates to a kind of silicon nitride, silicon carbide in conjunction with lanthanum hexaborane foamed ceramics, belong to porous ceramics preparing technical field.
Background technology
Silicon nitride, silicon carbide are a kind of low bulk, corrosion-resistant, high strength, resistant to elevated temperatures structural ceramic material in conjunction with lanthanum hexaborane composite ceramics.Silicon nitride, silicon carbide are applied to the industries such as the steel casting of large special steel casting mainly as molten steel filtering element in conjunction with lanthanum hexaborane foamed ceramics.The problems such as the Alumina Foam Ceramics of current use, lanthanum hexaborane foamed ceramics ubiquity use temperature is low, thermal shock resistance is poor, cannot meet the needs of large special steel casting continuous casting.
Summary of the invention
The object of the present invention is to provide a kind of silicon nitride, silicon carbide in conjunction with the preparation method of lanthanum hexaborane foamed ceramics, its technical scheme is:
Silicon nitride, silicon carbide in conjunction with a preparation method for lanthanum hexaborane foamed ceramics, by LaB 6, silicon powder, resol be the ratio of 40 ~ 88:10 ~ 40:2 ~ 20 and concentration with weight ratio is that 0.1 ~ 0.3wt% Gonak, 40 ~ 60wt% Homogeneous phase mixing makes ceramic size, then ceramic size is immersed in polyurethane foam, after drying in nitrogen atmosphere, be 300 DEG C ~ 1450 DEG C in temperature and slowly heat up 20 ~ 100 hours, 1450 DEG C of insulations 5 ~ 10 hours, be then that 1700 ~ 1750 DEG C of insulations make silicon nitride, silicon carbide for 20 ~ 120 minutes in conjunction with lanthanum hexaborane foamed ceramics in vacuum or argon gas atmosphere, temperature.
Compared with prior art, its advantage is in the present invention:
1, the present invention prepare silicon nitride, silicon carbide in conjunction with lanthanum hexaborane foamed ceramics uniform microstructure, intensity is high, and hole size is even;
2, the charcoal formed after resol, polyurethane foam and the Vltra tears charing that the present invention adopts and silica flour complete reaction form silicon carbide, avoid the residual of charcoal, and remaining silica flour at high temperature reacts with nitrogen and generates silicon nitride by lanthanum hexaborane and combine, newly-generated silicon nitride, silicon carbide make silicon nitride, silicon carbide in conjunction with lanthanum hexaborane foamed ceramics in conjunction with lanthanum hexaborane, avoid free remaining, silicon makes its intensity increase substantially;
3, this silicon nitride, silicon carbide are lightweight, high temperature resistant in conjunction with lanthanum hexaborane foamed ceramics, thermal shock resistance is excellent.
Embodiment
embodiment 1
By LaB 6, silicon powder, resol take weight ratio as the ratio of 40:40:20 and concentration for 0.1wt% Gonak 40wt% Homogeneous phase mixing makes ceramic size, then ceramic size is immersed in polyurethane foam, after drying in nitrogen atmosphere, be 300 DEG C ~ 1450 DEG C in temperature and slowly heat up 20 hours, 1450 DEG C of insulations 5 hours, be then that 1700 DEG C of insulations make silicon nitride, silicon carbide for 20 minutes in conjunction with lanthanum hexaborane foamed ceramics in vacuum or argon gas atmosphere, temperature.
The purity of testing proportion material used is technical pure.
embodiment 2
By LaB 6, silicon powder, resol take weight ratio as the ratio of 60:25:15 and concentration for 0.2wt% Gonak 50wt% Homogeneous phase mixing makes ceramic size, then ceramic size is immersed in polyurethane foam, after drying in nitrogen atmosphere, be 300 DEG C ~ 1450 DEG C in temperature and slowly heat up 60 hours, 1450 DEG C of insulations 8 hours, be then that 1730 DEG C of insulations make silicon nitride, silicon carbide for 70 minutes in conjunction with lanthanum hexaborane foamed ceramics in vacuum or argon gas atmosphere, temperature.
The purity of testing proportion material used is technical pure.
embodiment 3
By LaB 6, silicon powder, resol take weight ratio as the ratio of 88:10:2 and concentration for 0.3wt% Gonak 60wt% Homogeneous phase mixing makes ceramic size, then ceramic size is immersed in polyurethane foam, after drying in nitrogen atmosphere, be 300 DEG C ~ 1450 DEG C in temperature and slowly heat up 100 hours, 1450 DEG C of insulations 10 hours, be then that 1750 DEG C of insulations make silicon nitride, silicon carbide for 120 minutes in conjunction with lanthanum hexaborane foamed ceramics in vacuum or argon gas atmosphere, temperature.
The purity of testing proportion material used is technical pure.

Claims (1)

1. silicon nitride, silicon carbide are in conjunction with a preparation method for lanthanum hexaborane foamed ceramics, it is characterized in that: by LaB 6, silicon powder, resol be the ratio of 40 ~ 88:10 ~ 40:2 ~ 20 and concentration with weight ratio is that 0.1 ~ 0.3wt% Gonak, 40 ~ 60wt% Homogeneous phase mixing makes ceramic size, then ceramic size is immersed in polyurethane foam, after drying in nitrogen atmosphere, be 300 DEG C ~ 1450 DEG C in temperature and slowly heat up 20 ~ 100 hours, 1450 DEG C of insulations 5 ~ 10 hours, be then that 1700 ~ 1750 DEG C of insulations make silicon nitride, silicon carbide for 20 ~ 120 minutes in conjunction with lanthanum hexaborane foamed ceramics in vacuum or argon gas atmosphere, temperature.
CN201410563210.1A 2014-10-22 2014-10-22 A kind of silicon nitride, silicon carbide are in conjunction with the preparation method of lanthanum hexaborane foamed ceramics Expired - Fee Related CN104311102B (en)

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CN106478133A (en) * 2016-09-14 2017-03-08 郑州峰泰纳米材料有限公司 Silicon nitride, titanium carbide combine the preparation method of lanthanum hexaboride foamed ceramics
CN111018494B (en) * 2019-12-20 2022-02-15 中国建筑材料科学研究总院有限公司 Nano-pore heat insulation material and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1654432A (en) * 2004-10-11 2005-08-17 西安交通大学 Method for preparing silicon nitride/silicon carbide porous ceramic
CN101323538A (en) * 2007-06-13 2008-12-17 山东理工大学 Preparation of high-temperature floamed ceramic
CN101591170A (en) * 2008-05-30 2009-12-02 山东理工大学 The preparation method of boride porous ceramic
CN102795859A (en) * 2012-08-17 2012-11-28 湖北红花高温材料有限公司 SiC-Si3N4 high temperature ceramic furnace bottom plate for annular furnace and preparation method thereof
CN103011887A (en) * 2011-09-28 2013-04-03 贵州师范大学 Silicon carbide foamed ceramics and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1654432A (en) * 2004-10-11 2005-08-17 西安交通大学 Method for preparing silicon nitride/silicon carbide porous ceramic
CN101323538A (en) * 2007-06-13 2008-12-17 山东理工大学 Preparation of high-temperature floamed ceramic
CN101591170A (en) * 2008-05-30 2009-12-02 山东理工大学 The preparation method of boride porous ceramic
CN103011887A (en) * 2011-09-28 2013-04-03 贵州师范大学 Silicon carbide foamed ceramics and preparation method thereof
CN102795859A (en) * 2012-08-17 2012-11-28 湖北红花高温材料有限公司 SiC-Si3N4 high temperature ceramic furnace bottom plate for annular furnace and preparation method thereof

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