CN104294071A - Low temperature glass phase enhanced SiCp/Cu composite material and preparation method thereof - Google Patents
Low temperature glass phase enhanced SiCp/Cu composite material and preparation method thereof Download PDFInfo
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- CN104294071A CN104294071A CN201410011383.2A CN201410011383A CN104294071A CN 104294071 A CN104294071 A CN 104294071A CN 201410011383 A CN201410011383 A CN 201410011383A CN 104294071 A CN104294071 A CN 104294071A
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- 239000011521 glass Substances 0.000 title claims abstract description 37
- 239000002131 composite material Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000011159 matrix material Substances 0.000 claims abstract description 46
- 239000002245 particle Substances 0.000 claims abstract description 27
- 238000005245 sintering Methods 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 84
- 239000010949 copper Substances 0.000 claims description 71
- 239000000843 powder Substances 0.000 claims description 33
- 239000008187 granular material Substances 0.000 claims description 18
- 238000003756 stirring Methods 0.000 claims description 14
- 238000009413 insulation Methods 0.000 claims description 10
- 238000010792 warming Methods 0.000 claims description 10
- 238000001354 calcination Methods 0.000 claims description 9
- 238000006073 displacement reaction Methods 0.000 claims description 9
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 238000000967 suction filtration Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 238000000748 compression moulding Methods 0.000 claims description 6
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910021431 alpha silicon carbide Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000725 suspension Substances 0.000 claims description 5
- 150000001879 copper Chemical class 0.000 claims description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 4
- 238000006722 reduction reaction Methods 0.000 claims description 4
- 238000003980 solgel method Methods 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical group [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 2
- 229960003280 cupric chloride Drugs 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- 238000003746 solid phase reaction Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 230000002776 aggregation Effects 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- 238000009792 diffusion process Methods 0.000 abstract description 2
- 239000000376 reactant Substances 0.000 abstract description 2
- 239000012071 phase Substances 0.000 abstract 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 abstract 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 abstract 2
- 238000004220 aggregation Methods 0.000 abstract 1
- 239000007795 chemical reaction product Substances 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 238000007605 air drying Methods 0.000 description 4
- 230000007062 hydrolysis Effects 0.000 description 4
- 238000006460 hydrolysis reaction Methods 0.000 description 4
- 238000001291 vacuum drying Methods 0.000 description 4
- 238000003828 vacuum filtration Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000013019 agitation Methods 0.000 description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 235000013312 flour Nutrition 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010671 solid-state reaction Methods 0.000 description 2
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 239000012761 high-performance material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
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- Glass Compositions (AREA)
Abstract
The invention discloses a low temperature glass phase enhanced SiCp/Cu composite material and a preparation method thereof, and belongs to the technical field of ceramic enhanced metal-based composite material preparation. SiC particles coated by a glass phase are dispersed in Cu matrix of the SiCp/Cu composite material; and the glass phase comprises SiO2 and K2O, wherein a molar ratio of SiO2 to K2O is 2-6 and a volume ratio of SiC to SiO2 and Cu in the glass phase is 1:(0.2-1.2):(2-4). On one hand, the low temperature glass phase has good interface wettability with the SiC particles in melting, a certain amount of Cu2O is formed on the Cu-based particle surfaces during a sintering process of the composite material, and Cu2O participates in formation of interface glass phase, so that the Cu matrix has good adhesion with the glass phase. On the other hand, the introduction of the interface glass phase can prevent direct surface contact of a plurality of SiC particles in aggregation and prevent mutual diffusion of reactant atoms in an interface solid-phase reaction, thereby effectively inhibiting formation of interface solid-phase reaction products and enabling the composite material to gain excellent comprehensive mechanical properties.
Description
Technical field
The present invention is specifically related to the SiC that a kind of low temperature glass strengthens mutually
p/ Cu matrix material, and the preparation method of this matrix material, belong to Ceramic Reinforced MMCs preparing technical field.
Background technology
Carborundum granule-reinforced copper-based composite material, combines Copper substrate and carbofrax strengthening particle advantage separately, cooperative compensating, comprehensively excellent conduction, heat conduction and the performance such as wear-resistant, and has the advantages such as low raw-material cost, preparation technology are simple.SiC
p/ Cu matrix material probably becomes the high performance material of structure-function integration of new generation, and plays an important role in the field such as aerospace, Electronic Packaging, is a kind of type material with broad prospect of application.But due to the difference of SiC and Cu lattice types, cause there is the series of problems such as nonwetting, dispersing uniformity is poor between melting Cu and SiC two-phase, and surface reaction easily occurs in Composite Sintering process, had a strong impact on SiC
pthe lifting of/Cu composite material combination property.At present, have in a large number about the literature research of the interface modification of ceramic-metal composite material, to improve interface cohesion and the dispersing uniformity of SiC particles reinforced phase and metallic matrix, but over-all properties improves comparatively limited.
Summary of the invention
The object of this invention is to provide the SiC that a kind of low temperature glass strengthens mutually
p/ Cu matrix material.
Meanwhile, the present invention also provides the SiC that a kind of low temperature glass strengthens mutually
pthe preparation method of/Cu matrix material.
In order to realize above object, the technical solution adopted in the present invention is:
The SiC that a kind of low temperature glass strengthens mutually
p/ Cu matrix material, is dispersed with the SiC particle wrapped up by glassy phase in Cu matrix.
Described glassy phase composition is SiO
2and K
2o, SiO
2with K
2the mol ratio of O is 2 ~ 6.
SiO in described SiC and glassy phase
2and the volume ratio of Cu is 1:(0.2 ~ 1.2): (2 ~ 4).
Described SiC particle is of a size of 3 ~ 20 μm.
The SiC that a kind of low temperature glass strengthens mutually
pthe preparation method of/Cu matrix material, comprises the following steps:
(1) adopt sol-gel method preparation by amorphous Si O
2the plural gel body of parcel SiC, suction filtration, dry rear grinding obtain by amorphous Si O
2the powder of parcel SiC;
(2) by the powder of step (1) and K
2cO
31/2H
2o ground and mixed, after compression molding, calcining generates glassy phase, grind, sieve after obtain wrapping up the powder of SiC by glassy phase;
(3) utilize displacement reduction reaction in the powder granule surface parcel Cu particle of step (2), sieve after suction filtration, drying and obtain SiC
p/ Cu composite granule;
(4) get the composite granule of step (3), utilize the SiC that vacuum heating-press sintering legal system strengthens mutually for low temperature glass
p/ Cu matrix material.
Sol-gel method in described step (1) is: be scattered in ethanolic soln by tetraethoxy (TEOS), α-SiC, and regulator solution pH value is 2 ~ 3, fully stirs at 30 ~ 60 DEG C, makes tetraethoxy complete hydrolysis form SiO
2colloidal sol, then regulator solution pH value is 8 ~ 11, stirs and obtain plural gel body.The time of stirring in acid condition is 2 ~ 6 hours, and the time of stirring under alkaline condition is 0.1 ~ 1 hour.
In described step (1) after vacuum filtration, forced air drying 1.5 ~ 2.5 hours under 75 ~ 85 DEG C of conditions.
SiO in the powder of the middle step (1) of described step (2)
2with K
2cO
31/2H
2the mol ratio of O is 2 ~ 6.
In described step (2), the pressure of compression molding is 5 ~ 20MPa.
In described step (2), the temperature of calcining is 750 ~ 800 DEG C, and calcination time is 1 ~ 4 hour.
Sieve in described step (2) as crossing 200 mesh sieves.
Displacement reduction reaction in described step (3) is: be scattered in soluble copper salts solution by the powder of step (2), adds the suspension liquid containing reducing metal powder at 0 ~ 10 DEG C while stirring, displacement copper.
Described soluble copper salt is copper sulfate, cupric chloride or cupric nitrate.
Described reducing metal powder is preferably zinc powder or iron powder.
In described step (3) after suction filtration, vacuum-drying 5 ~ 7 hours under 75 ~ 85 DEG C of conditions, cross 120 mesh sieves, the number of times that sieves is at least 3 times.
Vacuum heating-press sintering method in described step (4) is: by the precompressed under normal temperature, 5 ~ 15MPa pressure of the composite granule of step (3), be warming up to 550 ~ 650 DEG C of heat-insulation pressure keepings 10 ~ 30 minutes, boost to 20 ~ 40MPa again, be warming up to 700 ~ 800 DEG C of heat-insulation pressure keepings 0.5 ~ 2 hour, with the demoulding after furnace temperature cooling.
Beneficial effect of the present invention:
The present invention adopts three step packs to prepare SiC
p/ Cu composite granule, then vacuum heating-press sintering prepares matrix material, by wrapping up low temperature glass as interfacial layer at SiC particle surface, effectively can improve SiC
p/ Cu composite material interface binding characteristic, control inerface reacts.On the one hand low temperature glass when melting and SiC particle there is good interface wet ability, while in Composite Sintering process Cu blapharoplast surface can form a certain amount of Cu
2o, participates in the formation of interfacial glass phase, and therefore Cu matrix and glassy phase combine good; On the other hand, the introducing of interfacial glass phase can avoid straight surfaces brought into contact during multiple SiC particle agglomeration, stop the phase mutual diffusion of reactant atom in Interface solid state reaction simultaneously, thus effectively suppress its Interface solid state reaction product---the generation of fragility copper silicide, make matrix material obtain good comprehensive mechanical property.
Accompanying drawing explanation
Fig. 1 is SiC particle surface parcel SiO in the embodiment of the present invention 1
2a () composes with the XRD figure of glassy phase (b);
Fig. 2 is that in embodiment 1, SiC particle is schemed through the SEM of different parcel step;
Fig. 3 is SiC in embodiment 1
pthe section SEM of/Cu matrix material schemes;
Fig. 4 is SiC in embodiment 1
pthe XRD figure spectrum of/Cu matrix material.
Embodiment
Following embodiment is only described in further detail the present invention, but does not form any limitation of the invention.
Embodiment 1
The SiC that in the present embodiment, low temperature glass strengthens mutually
p/ Cu matrix material, is dispersed with the SiC particle wrapped up by glassy phase, wherein SiC, SiO in Cu matrix
2, Cu three volume ratio be 1:0.6:3, SiO in glassy phase
2with K
2the mol ratio of O is that 3, SiC particle is of a size of 10 μm.
The SiC that in the present embodiment, low temperature glass strengthens mutually
pthe preparation method of/Cu matrix material, comprises the following steps:
(1) be 23:35:3 according to the volume ratio of ester, alcohol, water three, tetraethoxy (TEOS), α-SiC are scattered in ethanolic soln, be 2 by citric acid regulating solution pH value, stir 3 hours at 45 DEG C of condition lower magnetic forces, make tetraethoxy complete hydrolysis be SiO
2form colloidal sol, then be 8 by ammoniacal liquor regulator solution pH value, continue magnetic agitation and obtain plural gel body, vacuum filtration in 0.1 hour, under 80 DEG C of conditions, forced air drying 2 hours, grinds and obtains by amorphous Si O
2the powder of parcel SiC;
(2) by the powder of step (1) and K
2cO
31/2H
2o ground and mixed, SiO in powder
2with K
2cO
31/2H
2the mol ratio of O is 3,10MPa pressure compression molding, within 4 hours, generates glassy phase at 750 DEG C of temperature lower calcinations, and grinding flour, obtains the powder being comprised SiC by glassy phase after crossing 200 mesh sieves;
(3) powder of step (2) is scattered in copper-bath, the suspension liquid containing reductibility zinc powder is dripped while stirring at 0 DEG C, displacement copper, and utilize Spin precipitate in the powder granule surface parcel Cu particle of step (2), suction filtration, vacuum-drying 6 hours under 80 DEG C of conditions, crosses 3 120 mesh sieves, obtains SiC
p/ Cu composite granule;
(4) by the precompressed under normal temperature, 10MPa pressure of the composite granule of step (3), be warming up to 600 DEG C with 20 DEG C/min, heat-insulation pressure keeping 20 minutes, then boost to 30MPa, be warming up to 750 DEG C of heat-insulation pressure keepings 1 hour, namely obtain SiC with the demoulding after furnace temperature cooling
p/ Cu matrix material.
SiC particle surface parcel SiO in the present embodiment
2a the XRD figure spectrum of () and glassy phase (b) is shown in Fig. 1; SiC particle is shown in Fig. 2, (a) original SiC in Fig. 2, (b) amorphous SiO through the SEM figure of different parcel step
2the SiC of parcel, the SiC of (c) glassy phase parcel, (d) SiC
p/ Cu; SiC
pthe section SEM figure of/Cu matrix material is shown in Fig. 3; SiC
pthe XRD figure spectrum of/Cu matrix material is shown in Fig. 4.
As can be seen from Figure 3, the SiC for preparing of the present embodiment
p/ Cu microstructure of composite is even, density is high.Void content is 0.99 ~ 2.22%, and Vickers' hardness is 1.93 ~ 2.07GPa, and bending strength is 228 ~ 242MPa.
Embodiment 2
The SiC that in the present embodiment, low temperature glass strengthens mutually
p/ Cu matrix material, is dispersed with the SiC particle wrapped up by glassy phase, wherein SiC, SiO in Cu matrix
2, Cu three volume ratio be 1:0.2:2, SiO in glassy phase
2with K
2the mol ratio of O is that 2, SiC particle is of a size of 10 μm.
The SiC that in the present embodiment, low temperature glass strengthens mutually
pthe preparation method of/Cu matrix material, comprises the following steps:
(1) be 23:35:3 according to the volume ratio of ester, alcohol, water three, being scattered in ethanolic soln by tetraethoxy (TEOS), α-SiC, is 2 by citric acid regulating solution pH value, stirs 6 hours at 30 DEG C of lower magnetic forces, makes tetraethoxy complete hydrolysis be SiO
2form colloidal sol, then be 9 by ammoniacal liquor regulator solution pH value, continue magnetic agitation and obtain plural gel body, vacuum filtration in 1 hour, under 75 DEG C of conditions, forced air drying 2.5 hours, grinds and obtains by amorphous Si O
2the powder of parcel SiC;
(2) by the powder of step (1) and K
2cO
31/2H
2o ground and mixed, SiO in powder
2with K
2cO
31/2H
2the mol ratio of O is 2,10MPa pressure compression molding, within 1 hour, generates glassy phase at 800 DEG C of temperature lower calcinations, and grinding flour, obtains the powder being comprised SiC by glassy phase after crossing 200 mesh sieves;
(3) powder of step (2) is scattered in copper-bath, the suspension liquid containing reductibility zinc powder is dripped while stirring at 10 DEG C, displacement copper, and utilize Spin precipitate in the powder granule surface parcel Cu particle of step (2), suction filtration, vacuum-drying 7 hours under 75 DEG C of conditions, crosses 3 120 mesh sieves, obtains SiC
p/ Cu composite granule;
(4) by the precompressed under normal temperature, 15MPa pressure of the composite granule of step (3), be warming up to 550 DEG C with 20 DEG C/min, heat-insulation pressure keeping 30 minutes, then boost to 40MPa, be warming up to 800 DEG C of heat-insulation pressure keepings 0.5 hour, namely obtain SiC with the demoulding after furnace temperature cooling
p/ Cu matrix material.
SiC in the present embodiment
pthe void content of/Cu matrix material is 2.41 ~ 4.74%, and Vickers' hardness is 1.66 ~ 1.88GPa, and bending strength is 220 ~ 235MPa.
Embodiment 3
The SiC that in the present embodiment, low temperature glass strengthens mutually
p/ Cu matrix material, is dispersed with the SiC particle wrapped up by glassy phase, wherein SiC, SiO in Cu matrix
2, Cu three volume ratio be 1:1.2:4, SiO in glassy phase
2with K
2the mol ratio of O is that 6, SiC particle is of a size of 10 μm.
The SiC that in the present embodiment, low temperature glass strengthens mutually
pthe preparation method of/Cu matrix material, comprises the following steps:
(1) be 23:35:3 according to the volume ratio of ester, alcohol, water three, being scattered in ethanolic soln by tetraethoxy (TEOS), α-SiC, is 3 by citric acid regulating solution pH value, stirs 2 hours at 60 DEG C of lower magnetic forces, makes tetraethoxy complete hydrolysis be SiO
2form colloidal sol, then be 11 by ammoniacal liquor regulator solution pH value, continue magnetic agitation and obtain plural gel body, vacuum filtration in 2 hours, under 85 DEG C of conditions, forced air drying 1.5 hours, grinds and obtains by amorphous Si O
2the powder of parcel SiC;
(2) by the powder of step (1) and K
2cO
31/2H
2o ground and mixed, SiO in powder
2with K
2cO
31/2H
2the mol ratio of O is 6,20MPa pressure compression molding, within 3 hours, generates glassy phase at 760 DEG C of temperature lower calcinations, and grinding flour, obtains the powder being comprised SiC by glassy phase after crossing 200 mesh sieves;
(3) powder of step (2) is scattered in copper-bath, the suspension liquid containing reductibility zinc powder is dripped while stirring at 5 DEG C, displacement copper, and utilize Spin precipitate in the powder granule surface parcel Cu particle of step (2), suction filtration, vacuum-drying 5 hours under 85 DEG C of conditions, crosses 3 120 mesh sieves, obtains SiC
p/ Cu composite granule;
(4) by the precompressed under normal temperature, 5MPa pressure of the composite granule of step (3), be warming up to 650 DEG C with 20 DEG C/min, heat-insulation pressure keeping 10 minutes, then boost to 20MPa, be warming up to 700 DEG C of heat-insulation pressure keepings 2 hours, namely obtain SiC with the demoulding after furnace temperature cooling
p/ Cu matrix material.
SiC in the present embodiment
pthe void content of/Cu matrix material is 4.46 ~ 6.15%, and Vickers' hardness is 1.58 ~ 1.69GPa, and bending strength is 172 ~ 186MPa.
Claims (10)
1. the SiC that strengthens mutually of a low temperature glass
p/ Cu matrix material, is characterized in that: in Cu matrix, be dispersed with the SiC particle wrapped up by glassy phase.
2. the SiC that strengthens mutually of low temperature glass according to claim 1
p/ Cu matrix material, is characterized in that: described glassy phase composition is SiO
2and K
2o, SiO
2with K
2the mol ratio of O is 2 ~ 6.
3. the SiC that strengthens mutually of low temperature glass according to claim 2
p/ Cu matrix material, is characterized in that: SiO in described SiC and glassy phase
2and the volume ratio of Cu is 1:(0.2 ~ 1.2): (2 ~ 4).
4. the SiC that strengthens mutually of the low temperature glass as described in any one of claim 1-3
pthe preparation method of/Cu matrix material, is characterized in that: comprise the following steps:
(1) adopt sol-gel method preparation by amorphous Si O
2the plural gel body of parcel SiC, suction filtration, dry rear grinding obtain by amorphous Si O
2the powder of parcel SiC;
(2) by the powder of step (1) and K
2cO
31/2H
2o ground and mixed, after compression molding, calcining generates glassy phase, grind, sieve after obtain wrapping up the powder of SiC by glassy phase;
(3) utilize displacement reduction reaction in the powder granule surface parcel Cu particle of step (2), sieve after suction filtration, drying and obtain SiC
p/ Cu composite granule;
(4) get the composite granule of step (3), utilize the SiC that vacuum heating-press sintering legal system strengthens mutually for low temperature glass
p/ Cu matrix material.
5. the SiC that strengthens mutually of low temperature glass according to claim 4
pthe preparation method of/Cu matrix material, it is characterized in that: the sol-gel method in described step (1) is: tetraethoxy (TEOS), α-SiC are scattered in ethanolic soln, regulator solution pH value is 2 ~ 3, stir at 30 ~ 60 DEG C, regulator solution pH value is 8 ~ 11 again, stirs and obtain plural gel body.
6. the SiC that strengthens mutually of low temperature glass according to claim 4
pthe preparation method of/Cu matrix material, is characterized in that: in described step (2), the temperature of calcining is 750 ~ 800 DEG C, and calcination time is 1 ~ 4 hour.
7. the SiC that strengthens mutually of low temperature glass according to claim 4
pthe preparation method of/Cu matrix material, is characterized in that: the displacement reduction reaction in described step (3) is: be scattered in soluble copper salts solution by the powder of step (2), add the suspension liquid containing reducing metal powder while stirring, displacement copper.
8. the SiC that strengthens mutually of low temperature glass according to claim 7
pthe preparation method of/Cu matrix material, is characterized in that: described soluble copper salt is copper sulfate, cupric chloride or cupric nitrate.
9. the SiC that strengthens mutually of low temperature glass according to claim 7
pthe preparation method of/Cu matrix material, is characterized in that: described reducing metal powder is zinc powder or iron powder.
10. the SiC that strengthens mutually of low temperature glass according to claim 4
pthe preparation method of/Cu matrix material, it is characterized in that: the vacuum heating-press sintering method in described step (4) is: by the precompressed under normal temperature, 5 ~ 15MPa pressure of the composite granule of step (3), be warming up to 550 ~ 650 DEG C of heat-insulation pressure keepings 10 ~ 30 minutes, boost to 20 ~ 40MPa again, be warming up to 700 ~ 800 DEG C of heat-insulation pressure keepings 0.5 ~ 2 hour, with the demoulding after furnace temperature cooling.
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|---|---|---|---|
| CN201410011383.2A CN104294071B (en) | 2014-01-09 | 2014-01-09 | SiCp/Cu composite that a kind of low temperature glass strengthens mutually and preparation method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107326320A (en) * | 2017-05-09 | 2017-11-07 | 华南理工大学 | A kind of high body point SiCp/Al and bismuthate glass composite and preparation method thereof |
| CN109022886A (en) * | 2018-09-27 | 2018-12-18 | 太原科技大学 | A kind of SiCPEnhance the preparation method of Cu-base composites |
| CN110396616A (en) * | 2018-04-25 | 2019-11-01 | 比亚迪股份有限公司 | A kind of composite material and preparation method and application |
| CN112916867A (en) * | 2021-01-13 | 2021-06-08 | 中国科学院金属研究所 | Photocuring 3D printing nanoparticle reinforced metal piece and preparation method thereof |
| CN113186416A (en) * | 2020-01-14 | 2021-07-30 | 郑州航空工业管理学院 | SiC reinforced copper-based composite material and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1563460A (en) * | 2004-03-26 | 2005-01-12 | 哈尔滨工业大学 | SiC/Cu composite materrial and preparation material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107326320A (en) * | 2017-05-09 | 2017-11-07 | 华南理工大学 | A kind of high body point SiCp/Al and bismuthate glass composite and preparation method thereof |
| CN110396616A (en) * | 2018-04-25 | 2019-11-01 | 比亚迪股份有限公司 | A kind of composite material and preparation method and application |
| CN109022886A (en) * | 2018-09-27 | 2018-12-18 | 太原科技大学 | A kind of SiCPEnhance the preparation method of Cu-base composites |
| CN113186416A (en) * | 2020-01-14 | 2021-07-30 | 郑州航空工业管理学院 | SiC reinforced copper-based composite material and preparation method thereof |
| CN112916867A (en) * | 2021-01-13 | 2021-06-08 | 中国科学院金属研究所 | Photocuring 3D printing nanoparticle reinforced metal piece and preparation method thereof |
| CN112916867B (en) * | 2021-01-13 | 2022-01-11 | 中国科学院金属研究所 | Photocuring 3D printing nanoparticle reinforced metal piece and preparation method thereof |
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