CN104284104A - Method for achieving smaller-than-one line exposure in CMOS image sensor - Google Patents
Method for achieving smaller-than-one line exposure in CMOS image sensor Download PDFInfo
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- CN104284104A CN104284104A CN201410601541.XA CN201410601541A CN104284104A CN 104284104 A CN104284104 A CN 104284104A CN 201410601541 A CN201410601541 A CN 201410601541A CN 104284104 A CN104284104 A CN 104284104A
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Abstract
The invention discloses a method for achieving smaller-than-one line exposure in a CMOS image sensor. The method includes the steps of conducting read-out operation on the nth line of pixels when operation is conducted on the nth line of pixels in a pixel array, sending out the line address of the (n+1)th line to the pixel array, calculating the exposure time of normal exposure according to the luminance of a current image, calculating the time required to be delayed for reset operation of each line according to the calculated exposure time, and delaying the reset operation of each line of pixels so that the smaller-than-one line exposure function can be achieved. The phenomenon that due to the fact that the method is influenced by sunlight and strong light in a parking lot at night when implemented outdoors, large-area exposure occurs can be avoided.
Description
Technical field
The present invention relates to a kind of cmos image sensor exposure technique, particularly relate in a kind of cmos image sensor the method realizing being less than 1 row exposure.
Background technology
At present, along with flourish in recent years of image sensor technologies, cmos image sensor all yields unusually brilliant results in each technical field, and the function of imageing sensor as indispensability is all embedded in integral product by increasing industry and civil equipment.At vehicle electric field, cmos image sensor obtains application widely especially in recent years, such as, be applied in backing system, and cmos image sensor technology provide the user great convenience.
In the prior art, cmos image sensor mainly uses rolling shutter pattern.Rolling Shutter is electronics Rolling shutter, and its operation principle is: to arbitrary pixel, is reset when exposing and starting, then etc. to be exposed, after the time for exposure, then is read by the signal value of this pixel.Due under which of prior art, data reading is serial, and clearing, exposure and reading also can only sequentially be carried out line by line, and therefore, in such a mode, the minimum exposure time that prior art can realize is 1 row exposure.
As shown in Figure 1, be that the RAW output format cmos image sensor of 1600x1200 is example with output resolution ratio, 1 row Exposure mode of prior art is described.In this imageing sensor, digital logic functions module operates cmos pixel array with behavior unit.In every line operate, comprise the reading (Pixel Read) to current line view data and (Pixel Reset) is resetted to another one-row pixels.When being 1 upon exposure, when operating the n-th line of pel array, to (n+1)th advance horizontal reset operation.When advancing line operate to (n+1)th of pel array, the view data of n-th line is read.Read to n-th line data to the (n+1)th horizontal reset of advancing, be real exposure time (exposure time) during this period of time, namely 1 row time for exposure.This is current most widely used cmos image sensor exposure method.
At least there is following defect in above-mentioned prior art:
Be applied to cmos image sensor in backing system owing to mainly using out of doors, therefore by the impact of the strong light of daylight and parking lot in evening, often occur that the time for exposure has been 1 row, but the phenomenon of the image sent of cmos image sensor still large area overexposure.
Summary of the invention
The object of this invention is to provide a kind of method avoiding realizing in the cmos image sensor of large area overexposure phenomenon being less than 1 row exposure.
The object of the invention is to be achieved through the following technical solutions:
Realize the method being less than 1 row exposure in cmos image sensor of the present invention, it is characterized in that, comprise step:
When operating the n-th line pixel of pel array, first read operation is done to n-th line pixel;
The row address of the (n+1)th row is sent to pel array;
According to the brightness of present image, calculate the time for exposure of normal exposure;
According to the calculated time for exposure, calculate the time of every horizontal reset action need time delay backward, to the reset operation time delay backward of every row pixel, thus realize being less than 1 row exposure function.
As seen from the above technical solution provided by the invention, the method being less than 1 row exposure is realized in the cmos image sensor that the embodiment of the present invention provides, due in cmos image sensors to the reset operation time delay backward of every row pixel, thus according to image brightness, the function being less than 1 row exposure can be realized.When can avoid using out of doors, by the impact of the strong light of daylight and parking lot in evening, the phenomenon of large area overexposure.
Accompanying drawing explanation
Fig. 1 is 1 row Exposure mode time diagram in cmos image sensor in prior art;
Fig. 2 is the time diagram realizing the method being less than 1 row exposure in the cmos image sensor that provides of the embodiment of the present invention.
Embodiment
To be described in further detail the embodiment of the present invention below.
In cmos image sensor of the present invention realize be less than 1 row exposure method, its preferably embodiment be:
Comprise step:
When operating the n-th line pixel of pel array, first read operation is done to n-th line pixel;
The row address of the (n+1)th row is sent to pel array;
According to the brightness of present image, calculate the time for exposure of normal exposure;
According to the calculated time for exposure, calculate the time of every horizontal reset action need time delay backward, to the reset operation time delay backward of every row pixel, thus realize being less than 1 row exposure function.
Realize the method being less than 1 row exposure in cmos image sensor of the present invention, in cmos image sensors to the reset operation time delay backward of every row pixel, thus according to image brightness, realize the function being less than 1 row exposure.
Specific embodiment:
Be described with the RAW data instance that cmos image sensor wants output resolution ratio to be 1600x1200, but the present invention can be applied to the cmos image sensor of other output formats or the cmos image sensor of other resolution equally.
As shown in Figure 2, specific implementation step is:
When operating the n-th line pixel of pel array, first read operation is done to n-th line pixel;
The row address of the (n+1)th row is sent to pel array;
According to the brightness of present image, calculating can time for exposure of normal exposure;
According to the time for exposure calculated in 3, calculate the time of every horizontal reset action need time delay backward, thus realize being less than 1 row exposure function.
The above; be only the present invention's preferably embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (1)
1. realize the method being less than 1 row exposure in cmos image sensor, it is characterized in that, comprise step:
When operating the n-th line pixel of pel array, first read operation is done to n-th line pixel;
The row address of the (n+1)th row is sent to pel array;
According to the brightness of present image, calculate the time for exposure of normal exposure;
According to the calculated time for exposure, calculate the time of every horizontal reset action need time delay backward, to the reset operation time delay backward of every row pixel, thus realize being less than 1 row exposure function.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410601541.XA CN104284104A (en) | 2014-10-30 | 2014-10-30 | Method for achieving smaller-than-one line exposure in CMOS image sensor |
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| CN201410601541.XA CN104284104A (en) | 2014-10-30 | 2014-10-30 | Method for achieving smaller-than-one line exposure in CMOS image sensor |
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| CN104284104A true CN104284104A (en) | 2015-01-14 |
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| CN201410601541.XA Pending CN104284104A (en) | 2014-10-30 | 2014-10-30 | Method for achieving smaller-than-one line exposure in CMOS image sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113890960A (en) * | 2021-08-30 | 2022-01-04 | 中汽创智科技有限公司 | Rolling shutter type exposure camera delay measuring device, method, controller and storage medium |
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| CN102685403A (en) * | 2012-05-07 | 2012-09-19 | 天津大学 | Method for expanding dynamic range of time-delay integration-complementary metal oxide semiconductor (TDI-CMOS) image sensor |
| CN102833488A (en) * | 2011-06-13 | 2012-12-19 | 索尼公司 | Image pickup apparatus, image pickup apparatus control method, and program |
| CN103248836A (en) * | 2012-02-14 | 2013-08-14 | 全视科技有限公司 | Method and system for black level correction for imaging pixels |
| WO2014127376A2 (en) * | 2013-02-15 | 2014-08-21 | Sionyx, Inc. | High dynamic range cmos image sensor having anti-blooming properties and associated methods |
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2014
- 2014-10-30 CN CN201410601541.XA patent/CN104284104A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931760A (en) * | 2007-05-17 | 2010-12-29 | 索尼株式会社 | The driving method of imageing sensor and electronic installation |
| CN102833488A (en) * | 2011-06-13 | 2012-12-19 | 索尼公司 | Image pickup apparatus, image pickup apparatus control method, and program |
| CN103248836A (en) * | 2012-02-14 | 2013-08-14 | 全视科技有限公司 | Method and system for black level correction for imaging pixels |
| CN102685403A (en) * | 2012-05-07 | 2012-09-19 | 天津大学 | Method for expanding dynamic range of time-delay integration-complementary metal oxide semiconductor (TDI-CMOS) image sensor |
| WO2014127376A2 (en) * | 2013-02-15 | 2014-08-21 | Sionyx, Inc. | High dynamic range cmos image sensor having anti-blooming properties and associated methods |
| WO2014127376A3 (en) * | 2013-02-15 | 2014-10-23 | Sionyx, Inc. | High dynamic range cmos image sensor having anti-blooming properties and associated methods |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113890960A (en) * | 2021-08-30 | 2022-01-04 | 中汽创智科技有限公司 | Rolling shutter type exposure camera delay measuring device, method, controller and storage medium |
| CN113890960B (en) * | 2021-08-30 | 2023-12-29 | 中汽创智科技有限公司 | Rolling shutter type exposure camera delay measuring device, method, controller and storage medium |
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Application publication date: 20150114 |