CN104278251A - Metal preform layer alloying apparatus and method - Google Patents
Metal preform layer alloying apparatus and method Download PDFInfo
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- CN104278251A CN104278251A CN201410476832.0A CN201410476832A CN104278251A CN 104278251 A CN104278251 A CN 104278251A CN 201410476832 A CN201410476832 A CN 201410476832A CN 104278251 A CN104278251 A CN 104278251A
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- 239000002184 metal Substances 0.000 title claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 73
- 238000000034 method Methods 0.000 title claims abstract description 55
- 238000005275 alloying Methods 0.000 title claims abstract description 37
- 239000007789 gas Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 229910016347 CuSn Inorganic materials 0.000 claims description 2
- 229910002535 CuZn Inorganic materials 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- PDYXSJSAMVACOH-UHFFFAOYSA-N [Cu].[Zn].[Sn] Chemical compound [Cu].[Zn].[Sn] PDYXSJSAMVACOH-UHFFFAOYSA-N 0.000 claims description 2
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 2
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 7
- 238000004070 electrodeposition Methods 0.000 abstract description 6
- 239000011261 inert gas Substances 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 3
- 238000001704 evaporation Methods 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract 2
- 229910000905 alloy phase Inorganic materials 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000013329 compounding Methods 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 16
- 239000010949 copper Substances 0.000 description 8
- 239000011669 selenium Substances 0.000 description 7
- 238000007669 thermal treatment Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 229910052711 selenium Inorganic materials 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000005265 energy consumption Methods 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- -1 pottery Substances 0.000 description 1
- 230000004223 radioprotective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a metal preform layer alloying apparatus and method. The metal preform layer alloying apparatus is a vacuum heat treatment apparatus which comprises a closed vessel, a plasma arranged in the closed vessel and a substrate heating device, wherein a substrate and another conductive electrode in the closed vessel constitute two electrodes for glowing of the plasma; the side wall of the closed vessel is provided with a vacuumizing channel and a channel for introducing H2 and Ar gas; and a temperature control system is arranged in the closed vessel. The metal preform layer alloying treatment method is characterized in that a metal preform layer prepared through sputtering, evaporation, electrodeposition and other methods is subjected to thermal annealing treatment at high temperature in vacuum or an inert gas protective atmosphere, so that metals are sufficiently compounded to form an alloy phase and eliminate internal stress of a film, thus obtaining the metal preform layer with uniform element distribution. The plasma-aided alloying process provided by the invention can realize sufficient compounding of metals at low temperature, enhance the effect of selenization and other subsequent treatment and film adhesion, and modify and improve the surface.
Description
Technical field
The present invention is a kind of metal preformed layer alloying Apparatus and method for, in particular to a kind of technique improving sputtering, evaporation or galvanic deposit and prepare metal preformed layer alloying effect, also can be used for the surface treatment of finishing material, belong to the innovative technology of metal preformed layer alloying Apparatus and method for.
Background technology
CIGS thin film solar cell has the advantages such as stability is high, radioprotective, assimilated efficiency are high, cheap glass, plastics, pottery, graphite can be used, the differing materials such as tinsel are worked as substrate and are manufactured, the film thickness that formation can produce voltage only needs several μm, therefore significantly can reduce the consumption (thickness can lower than Silicon Wafer solar cell more than 90%) of raw material under same light-receiving area compared with Silicon Wafer solar cell, the most Gao Yike of current efficiency of conversion reaches 20.9%.The Alloying Treatment of metal preformed layer is exactly the metal preformed layer sputtering, evaporation or electro-deposition method prepared under vacuum or under protection of inert gas environment, carries out thermal anneal process.The thermal expansivity of different thin-film material is different, because thermal expansion makes thin-film memory at stress when heat-treating in selenium atmosphere, causes adhesive force to be deteriorated; The insufficient meeting of metal preformed layer alloying makes to prepare CGS and CIS two-phase laminated flow phenomenon in the appearance of CIGS thin film process in its selenizing, Ga can not effectively mix in CIS lattice and can not improve film band gap, crystal grain defect in small, broken bits in film also can be made to increase, affect device efficiency.Therefore, the alloying process of metal preformed layer is most important to battery device.
Alloying thermal treatment under vacuum or protection of inert gas environment, the preformed layer Elements Diffusion of subzero treatment is insufficient, and pyroprocessing makes element in substrate or back electrode to film internal diffusion, and long-time comparatively high temps process easily causes film separation.
Form because metal preformed layer is added by multiple layer metal film-stack, the thermal expansivity of every layer of metallic film is different, and in selenidation process, film volume changes, and causes sticking power to be deteriorated; Element compounds is insufficient in addition affects resulting devices efficiency.Therefore, improve metal preformed layer sticking power, improve film quality, improving and improving metal preformed layer alloying level is the key issue needing at present to solve.
Summary of the invention
The object of type of the present invention is to consider the problems referred to above and provides one can at thermal treatment preformed layer under relatively lower temp, the metal preformed layer alloying equipment of the effect of the abundant chemical combination of element of the process that reaches a high temperature.
Another object of the present invention is to provide a kind of simple to operate, the metal preformed layer alloyage process that treatment effect is good.Plasma body of the present invention can play certain corrasion by effects on surface pattern, makes it surface-area larger, in follow-up selenidation process, is more conducive to Se and mixes.
Technical scheme of the present invention is: metal preformed layer alloying equipment of the present invention, for vacuum heat treatment equipment, include encloses container, be placed in the plasma body in encloses container and lining heat, two electrodes of another conducting electrode composition plasma glow in substrate and encloses container, the sidewall of encloses container is provided with evacuation passageway and is provided with the passage passing into H2 and Ar gas, and is provided with temperature controlling system in encloses container.
Metal preformed layer alloyage process of the present invention, using plasma assistant alloy metallization processes.
Metal preformed layer alloyage process of the present invention, specifically comprises the steps:
1) sputter at the substrate higher slice taking Mo as back electrode, evaporate or electrodeposited stacks metal preformed layer;
2) be positioned in metal preformed layer alloying equipment by the laminated metal preformed layer prepared, the evacuation passageway be provided with by encloses container sidewall realizes being evacuated to 10 ~ below 3Pa, and carries out heat temperature raising by lining heat to substrate;
3) two electrodes of another conducting electrode composition plasma glow in substrate and encloses container, the passage passing into H2 and Ar gas be provided with by encloses container sidewall passes into H2 and Ar gas between two electrodes as glow gases, gas flow ratio in adjustment encloses container and gas pressure intensity, open plasma body, carry out aura process;
4) step 3) carries out subsequent technique or taking-up after terminating.
The present invention is directed to the problems such as Low-Temperature Element diffusion in the metal preformed layer that exists in the prior art alloying process under vacuum or protection of inert gas is insufficient, high temperature sticking power variation, provide a kind of fast low temperature efficient alloying Apparatus and method for fully.The present invention can at thermal treatment preformed layer under relatively lower temp, the effect of the abundant chemical combination of element of the process that reaches a high temperature, and plasma body can play certain corrasion by effects on surface pattern, makes it surface-area larger, in follow-up selenidation process, is more conducive to Se and mixes.The present invention is that a kind of design is ingenious, excellent property, convenient and practical metal preformed layer alloying Apparatus and method for.
Accompanying drawing explanation
Fig. 1 is the structural representation of metal preformed layer alloying equipment of the present invention;
Fig. 2 is 250 DEG C of surfaces of the SEM without plasmaassisted metal preformed layer alloying and sectional view
Fig. 3 is 250 DEG C of SEM surface and sectional views of having plasmaassisted metal preformed layer alloying
Fig. 4 is 250 DEG C of surfaces of the SEM without selenizing after plasmaassisted metal preformed layer alloying and sectional view
Fig. 5 is 250 DEG C of SEM surface and sectional views of having selenizing after plasmaassisted metal preformed layer alloying
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further elaborated.
Embodiment
The structural representation of metal preformed layer alloying equipment of the present invention as shown in Figure 1, include encloses container, be placed in the plasma body in encloses container and lining heat, two electrodes of another conducting electrode composition plasma glow in substrate and encloses container, the sidewall of encloses container is provided with evacuation passageway and is provided with the passage passing into H2 and Ar gas, and is provided with temperature controlling system in encloses container.Above-mentioned temperature controlling system includes the temperature sensor and temperature-control device that are arranged on encloses container, and the signal output part of temperature sensor is connected with the signal input part of temperature-control device, and signal output part and the silicon load of temperature-control device connect.
Metal preformed layer alloyage process of the present invention, using plasma assistant alloy metallization processes.
Metal preformed layer alloyage process of the present invention, specifically comprises the steps:
1) sputter at the substrate higher slice taking Mo as back electrode, evaporate or electrodeposited stacks metal preformed layer;
2) be positioned in metal preformed layer alloying equipment by the laminated metal preformed layer prepared, the evacuation passageway be provided with by encloses container sidewall realizes being evacuated to 10 ~ below 3Pa, and carries out heat temperature raising by lining heat to substrate;
3) two electrodes of another conducting electrode composition plasma glow in substrate and encloses container, the passage passing into H2 and Ar gas be provided with by encloses container sidewall passes into H2 and Ar gas between two electrodes as glow gases, gas flow ratio in adjustment encloses container and gas pressure intensity, open plasma body, aura process;
4) step 3) carries out subsequent technique or taking-up after terminating.
Above-mentioned plasma body adopts the plasma process making gas glow discharge.
Above-mentioned plasma body adopts high frequency, intermediate frequency, radio frequency process.
Above-mentioned employing H2 and Ar gas are 0 ~ 1000Sccm as the gas flow scope of glow gases, and pressure range is 0 ~ 10000Pa.
Above-mentioned laminated metal preformed layer is any one in copper indium (CuIn) metal preformed layer, copper gallium (CuGa) metal preformed layer, copper indium gallium (CuInGa) metal preformed layer, copper zinc (CuZn) metal preformed layer, copper tin (CuSn) metal preformed layer, copper zinc-tin (CuZnSn) metal preformed layer.
The above-mentioned Alloying Treatment time is 2min ~ 60min.
Above-mentioned alloying treatment temperature is 50 DEG C ~ 500 DEG C.
Laminated metal preformed layer of the present invention can be used for preparing solar cell.
Metal preformed layer alloyage process of the present invention, can carry out Cement Composite Treated by Plasma to substrate respectively before silicon, in silicon, after silicon.The present invention can make abundant chemical combination between different metal element, and the sticking power between film and substrate improves.
As shown in Figures 2 to 5, to process the good film of compact crystallization, large size die attach power, the film shown in figure and the space between substrate are tested and are caused, and are not the embodiments of the poor adhesive force of film own.
Specific embodiments of the invention are as follows:
Embodiment 1:
Metal preformed layer alloyage process of the present invention, comprises the steps
1) electrochemical deposition method (or sputtering method) galvanic deposit in Cu, In or Ga solution respectively (or sputtering) is first adopted to prepare Cu layer, In layer, Ga layer.
2) preformed layer prepared is positioned in vacuum heat treatment equipment, is evacuated to below 6Pa.
3) respectively substrate heat up before, in temperature-rise period, heat up terminate after pass into H2 and Ar gas, open plasma aura, constant temperature continues 20min.
4) after alloying thermal treatment terminates, turn off plasma glow, open selenium source, underlayer temperature rises to more than 500 DEG C, and start selenizing, the selenizing time is at 10min.
The preformed layer that the present invention obtains and rear selenizing film surface finer and close, longitudinal Elemental redistribution evenly, and sticking power between substrate is better, and low-temperature heat treatment more reduces energy consumption.
Embodiment 2:
1) electrochemical deposition method (or sputtering method) substrate galvanic deposit in Cu, In or Ga solution respectively (or sputtering) is first adopted to prepare Cu layer, In layer, Ga layer.
2) preformed layer prepared is positioned in vacuum heat treatment equipment, is evacuated to below 8Pa.
3) respectively substrate heat up before, in temperature-rise period, heat up terminate after pass into H2 and Ar gas, open plasma aura, constant temperature continues 60min.
4) after alloying thermal treatment terminates, turn off plasma glow, open selenium source, underlayer temperature rises to 250 DEG C, and start selenizing, the selenizing time is at 60min.
The preformed layer that the present invention obtains and rear selenizing film surface finer and close, longitudinal Elemental redistribution evenly, and sticking power between substrate is better, and low-temperature heat treatment more reduces energy consumption.
Embodiment 3:
1) electrochemical deposition method (or sputtering method) substrate galvanic deposit in Cu, In or Ga solution respectively (or sputtering) is first adopted to prepare Cu layer, In layer, Ga layer.
2) preformed layer prepared is positioned in vacuum heat treatment equipment, is evacuated to below 10Pa.
3) respectively substrate heat up before, in temperature-rise period, heat up terminate after pass into H2 and Ar gas, open plasma aura, constant temperature continues 30min.
4) after alloying thermal treatment terminates, turn off plasma glow, open selenium source, underlayer temperature rises to 300 DEG C, and start selenizing, the selenizing time is at 30min.
The preformed layer that the present invention obtains and rear selenizing film surface finer and close, longitudinal Elemental redistribution evenly, and sticking power between substrate is better, and low-temperature heat treatment more reduces energy consumption.
Embodiment 4:
1) electrochemical deposition method (or sputtering method) substrate galvanic deposit in Cu, In or Ga solution respectively (or sputtering) is first adopted to prepare Cu layer, In layer, Ga layer.
2) preformed layer prepared is positioned in vacuum heat treatment equipment, is evacuated to below 3Pa.
3) respectively substrate heat up before, in temperature-rise period, heat up terminate after pass into H2 and Ar gas, open plasma aura, constant temperature continues 40min.
4) after alloying thermal treatment terminates, turn off plasma glow, open selenium source, underlayer temperature rises to 400 DEG C, and start selenizing, the selenizing time is at 40min.
The preformed layer that the present invention obtains and rear selenizing film surface finer and close, longitudinal Elemental redistribution evenly, and sticking power between substrate is better, and low-temperature heat treatment more reduces energy consumption.
Above-described embodiment is the present invention's preferably embodiment; but embodiments of the present invention are not restricted to the described embodiments; change, the modification made under other any does not deviate from spirit of the present invention and principle, substitute, combine, simplify; all should be the substitute mode of effective equivalence, be included within protection scope of the present invention.
Claims (10)
1. a metal preformed layer alloying equipment, it is characterized in that for vacuum heat treatment equipment, include encloses container, be placed in the plasma body in encloses container and lining heat, two electrodes of another conducting electrode composition plasma glow in substrate and encloses container, the sidewall of encloses container is provided with evacuation passageway and is provided with the passage passing into H2 and Ar gas, and is provided with temperature controlling system in encloses container.
2. a metal preformed layer alloyage process, is characterized in that using plasma assistant alloy metallization processes.
3. metal preformed layer alloyage process according to claim 2, is characterized in that comprising the steps:
1) sputter at the substrate higher slice taking Mo as back electrode, evaporate or electrodeposited stacks metal preformed layer;
2) be positioned in metal preformed layer alloying equipment by the laminated metal preformed layer prepared, the evacuation passageway be provided with by encloses container sidewall realizes being evacuated to 10 ~ below 3Pa, and carries out heat temperature raising by lining heat to substrate;
3) two electrodes of another conducting electrode composition plasma glow in substrate and encloses container, the passage passing into H2 and Ar gas be provided with by encloses container sidewall passes into H2 and Ar gas between two electrodes as glow gases, gas flow ratio in adjustment encloses container and gas pressure intensity, open plasma body, carry out aura process;
4) step 3) carries out subsequent technique or taking-up after terminating.
4. metal preformed layer alloyage process according to claim 3, is characterized in that above-mentioned plasma body adopts the plasma process making gas glow discharge.
5. metal preformed layer alloyage process according to claim 4, is characterized in that above-mentioned plasma body adopts high frequency, intermediate frequency, radio frequency process.
6. metal preformed layer alloyage process according to claim 3, it is characterized in that above-mentioned employing H2 and Ar gas are 0 ~ 1000Sccm as the gas flow scope of glow gases, pressure range is 0 ~ 10000Pa.
7. metal preformed layer alloyage process according to claim 3, is characterized in that above-mentioned laminated metal preformed layer is any one in copper indium (CuIn) metal preformed layer, copper gallium (CuGa) metal preformed layer, copper indium gallium (CuInGa) metal preformed layer, copper zinc (CuZn) metal preformed layer, copper tin (CuSn) metal preformed layer, copper zinc-tin (CuZnSn) metal preformed layer.
8. metal preformed layer alloyage process according to claim 3, is characterized in that the above-mentioned Alloying Treatment time is 2min ~ 60min.
9. metal preformed layer alloyage process according to claim 3, is characterized in that above-mentioned alloying treatment temperature is 50 DEG C ~ 500 DEG C.
10. an application for metal preformed layer, is characterized in that above-mentioned laminated metal preformed layer is for the preparation of solar cell.
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| CN201410476832.0A CN104278251A (en) | 2014-09-16 | 2014-09-16 | Metal preform layer alloying apparatus and method |
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| CN201410476832.0A CN104278251A (en) | 2014-09-16 | 2014-09-16 | Metal preform layer alloying apparatus and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106229383A (en) * | 2016-09-10 | 2016-12-14 | 华南理工大学 | A kind of equally distributed copper-indium-galliun-selenium film solar cell of gallium element and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113674A (en) * | 1984-06-28 | 1986-01-21 | Fujitsu Ltd | Manufacture of photoconductive element |
| CN102051603A (en) * | 2010-10-26 | 2011-05-11 | 南开大学 | Plasm-aided selenium sulfuration treatment device and process |
| CN102804395A (en) * | 2010-03-15 | 2012-11-28 | 夏普株式会社 | Substrate for photoelectric conversion device, photoelectric conversion device using same, method for producing the substrate for photoelectric conversion device, and method for manufacturing the photoelectric conversion device |
| CN204237865U (en) * | 2014-09-16 | 2015-04-01 | 阳江市汉能工业有限公司 | A kind of metal preformed layer alloying equipment |
-
2014
- 2014-09-16 CN CN201410476832.0A patent/CN104278251A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6113674A (en) * | 1984-06-28 | 1986-01-21 | Fujitsu Ltd | Manufacture of photoconductive element |
| CN102804395A (en) * | 2010-03-15 | 2012-11-28 | 夏普株式会社 | Substrate for photoelectric conversion device, photoelectric conversion device using same, method for producing the substrate for photoelectric conversion device, and method for manufacturing the photoelectric conversion device |
| CN102051603A (en) * | 2010-10-26 | 2011-05-11 | 南开大学 | Plasm-aided selenium sulfuration treatment device and process |
| CN204237865U (en) * | 2014-09-16 | 2015-04-01 | 阳江市汉能工业有限公司 | A kind of metal preformed layer alloying equipment |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106229383A (en) * | 2016-09-10 | 2016-12-14 | 华南理工大学 | A kind of equally distributed copper-indium-galliun-selenium film solar cell of gallium element and preparation method thereof |
| CN106229383B (en) * | 2016-09-10 | 2018-12-11 | 华南理工大学 | A kind of equally distributed copper-indium-galliun-selenium film solar cell of gallium element and preparation method thereof |
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Application publication date: 20150114 |